A quartz glass crucible having a crucible shape including straight body portion, curved portion, and bottom portion. The crucible includes: an outer layer made of an opaque quartz glass containing bubbles; and an inner layer made of a transparent quartz glass and having a thickness of greater than or equal to 1.5 mm. Concentrations of Na, K, and Li in the inner layer at 1 mm from an inner surface of the quartz glass crucible are less than 5 ppb by mass for Na, less than 5 ppb by mass for K, and less than 100 ppb by mass for Li. Average concentrations of Na, K, and Li in a thickness direction at the curved portion and the bottom portion in the outer layer are less than 10 ppb by mass for Na, less than 50 ppb by mass for K, and less than 180 ppb by mass for Li.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
2.
SYNTHETIC QUARTZ GLASS POWDER AND SILICA GLASS POWDER, QUARTZ GLASS PRODUCT AND METHOD FOR PRODUCING SAME
The present invention is a synthetic quartz glass powder, wherein the synthetic quartz glass powder contains an internal OH group therein, the synthetic quartz glass powder has a particle size distribution in which the weight of synthetic quartz glass powder having a particle diameter of more than 150 μm and 355 μm or less is 40% or more among the entire synthetic quartz glass powder, and among the synthetic quartz glass powder, the average internal OH group concentration Da of synthetic quartz glass powder a having a particle diameter of 250 μm or less and the average internal OH group concentration Db of synthetic quartz glass powder b having a particle diameter of more than 250 μm and 425 μm or less satisfy the relationship of formula (1) or formula (2). As a result, a synthetic quartz glass powder capable of suppressing the generation of bubbles at the time of melting during the production of a quartz glass product is provided. Formula (1): (Da-Db)/Da≤40% when Da ≥ Db Formula (2): (Db-Da)/Db≤40% when Da ≤ Db
The present invention is an electrode device comprising a support that joins to and holds a graphite electrode used for arc discharge for manufacturing a quartz crucible, the electrode device being characterized by having an antifouling thin film on, from among the surfaces of the support, the outermost surface layer of the portion adjacent to the graphite electrode when the support is joined to the graphite electrode. As a result of this configuration, the present invention provides an electrode device with which it is possible to suppress contamination from a support, and to shorten the graphite electrode used and thereby reduce manufacturing costs.
One aspect is a heat reflective member, a laminated structure in which quartz glass layers are formed on an upper surface and a lower surface of a siliceous sintered powder layer. The heat reflective member has an impermeable layer formed at a portion of the siliceous sintered powder layer at a cut-out end portion of the heat reflective member. The impermeable layer has a thickness at least larger than half of a thickness of the siliceous sintered powder layer and through which a gas or a liquid is prevented from penetrating. A buffer layer is formed between the impermeable layer and the siliceous sintered powder layer next to the impermeable layer and spaced apart from the cut-out end portion. The buffer layer changes in density from the impermeable layer toward the siliceous sintered powder layer.
A method for evaluating a quartz glass crucible constituted by an outer layer formed of an opaque quartz glass containing a bubble, and an inner layer formed of a transparent quartz glass. The method includes steps of preparing a quartz glass crucible to be evaluated, irradiating the quartz glass crucible to be evaluated with ultraviolet rays as an excitation light, detecting a blue fluorescence emitted from the quartz glass crucible irradiated with the ultraviolet rays, and evaluating a state of oxygen deficiency defects in the outer layer of the quartz glass crucible on the basis of existence or non-existence of the blue fluorescence. The method allows hydrogen doping and water vapor introduction to attain nondestructive and easy evaluation on the state of the oxygen deficiency defects generated in the quartz glass crucible.
The present invention is a graphite electrode to be used in arc discharge for manufacturing a quartz crucible. The graphite electrode comprises a graphite electrode body and a connection part protruding from the graphite electrode body, and can be connected by means of the connection part to an electrode device for energizing the graphite electrode. The connection part has a shape that can connected to the electrode device by being pounded in. This configuration makes it possible to provide a graphite electrode that can be used in the same manner as existing graphite electrodes while reducing processing costs.
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
H05B 7/14 - Dispositions ou procédés pour assembler des sections d'électrodes successives
C04B 35/52 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite
7.
QUARTZ GLASS CRUCIBLE FOR PULLING UP MONOCRYSTALLINE SILICON INGOT
The present invention is a quartz glass crucible for pulling up a monocrystalline silicon ingot, the quartz glass crucible having a crucible shape comprising a straight torso section, a rounded section, and a bottom section and having an outer layer formed from an opaque quartz glass containing air bubbles, and an inner layer formed from a transparent quartz glass and having a wall thickness of 1.5 mm or greater. At a position 1 mm from an inner surface of the quartz glass crucible, the concentration of Na is less than 5 mass ppb, the concentration of K is less than 5 mass ppb, and the concentration of Li is less than 100 mass ppb. Further, in the wall thickness direction of the bottom section and the rounded section, the average concentration of Na is less than 10 mass ppb, the average concentration of K is less than 50 mass ppb, and the average concentration of Li is less than 180 mass ppb in the outer layer. Through such a configuration, a quartz glass crucible for pulling up a monocrystalline ingot is provided by which the occurrence of pinholes in the pulled up monocrystalline silicon ingot can be suppressed.
A CZ crucible for growing a single crystal silicon ingot by a CZ method, where the CZ crucible includes a closed-end cylindrical graphite crucible and a closed-end cylindrical quartz glass crucible disposed inside the graphite crucible, and the CZ crucible includes a gap between an inner surface of a bottom portion of the graphite crucible and an outer surface of a bottom portion of the quartz glass crucible on a central axis of the CZ crucible, the gap keeping the inner surface of the bottom portion of the graphite crucible and the outer surface of the bottom portion of the quartz glass crucible contactless with each other. This provides a CZ crucible that ensures that a closed-end cylindrical quartz glass crucible for growing a single crystal silicon ingot by a CZ method can be stable and self-supporting when disposed inside a closed-end cylindrical graphite crucible.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A quartz glass crucible for growing a single crystal silicon ingot by a CZ method, where the crucible has a closed-end cylindrical shape including a cylindrical straight body portion, a first curved portion continuous with a lower end of the straight body portion and having a first curvature radius R1, a second curved portion continuous with the first and having a second curvature radius R2, and a bottom portion continuous with second curved portion, R1 and R2 have a relationship of R1
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
Provided are a method for manufacturing a fused quartz jig, and the fused quartz jig, which has, in a raised and recessed formation formed by chemical treatment where no micro-cracks are present, a front-surface raised and recessed finished surface having excellent uniformity without any conspicuous irregularity even if the fused quartz jig is large in size. The method for manufacturing the fused quartz jig having raises and recesses formed on the surface by chemical treatment includes an adhered matter removal step for removing adhered matter on a smooth fused quartz surface, and a finished surface-forming chemical treatment step for forming a raised and recessed finished surface by forming raises and recesses by using said chemical treatment on the fused quartz surface from which the adhered matter has been removed. The standard deviation when the surface roughness Ra of the raised and recessed finished surface has been measured in 10 or more places is 1.00 μm or less.
Provided is a silica glass disc in which the deformation amount thereof in heat treatment is minimized, and the surface area of a silica glass surface can be increased. There is provided a silica glass disc, including a dimple forming area in which a large number of dimples are formed on at least one of a front surface or a back surface of a silica glass body, and the dimples in the dimple forming area are regularly formed. It is preferred that the dimples be formed by a laser.
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
12.
Heat-reflecting member, and method for manufacturing glass member having heat-reflecting layer included therein
Provided is a heat reflective member, which is prevented from braking even in a high-temperature environment. It generates no dust in use, and can be washed with a chemical liquid. The heat reflective member has a laminated structure in which quartz glass layers are formed on an upper surface and a lower surface of a siliceous sintered powder layer. The heat reflective member includes: an impermeable layer which is formed at a portion of the siliceous sintered powder layer at an end portion of the heat reflective member, which has a thickness at least larger than half of a thickness of the siliceous sintered powder layer, and through which a gas or a liquid is prevented from penetrating; and a buffer layer which is formed between the impermeable layer and the siliceous sintered powder layer, and which changes in density from the impermeable layer toward the sintered powder layer.
One aspect is a reflective member, which has a laminated structure in which transparent quartz glass members are formed on an upper surface and a lower surface of an opaque siliceous sintered powder layer. The opaque siliceous sintered powder layer has a thickness of 0.1 mm or more and a thickness distribution of ±0.05 mm or less. When a load is applied to each of the transparent quartz glass members on an upper surface and a lower surface of the laminated structure in a direction parallel to the laminated structure, the reflective member is fractured at a load of 5 N or more per square centimeter. The laminated structure includes a semi-transparent portion having a width of 0.01 mm or less, which has an intermediate opacity between an opacity of the opaque siliceous sintered powder layer and an opacity of each of the transparent quartz glass members.
B32B 15/04 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 5/16 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches est formée de particules, p. ex. de copeaux, de fibres hachées, de poudre
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
C03B 19/06 - Autres méthodes de façonnage du verre par frittage
The present invention relates to a method for evaluating a quartz glass crucible having an outer layer comprising an opaque quartz glass including air bubbles and an inner layer comprising a transparent quartz glass, the method comprising a step for preparing a quartz glass crucible to be evaluated, a step for irradiating the quartz glass crucible with ultraviolet ray as excitation light, a step for detecting blue fluorescence emitted from the quartz glass crucible that has been irradiated with the ultraviolet ray, and a step for evaluating the condition of an oxygen deficiency center in the outer layer of the quartz glass crucible on the basis of the presence or absence of the blue fluorescence. A method for evaluating a quartz glass crucible can be provided, whereby it becomes possible to evaluate the condition of an oxygen deficiency center formed in the quartz glass crucible in a non-destructive and simple manner by the doping with hydrogen, the introduction of water vapor or the like.
Provided is a titanium-containing quartz glass having excellent UV absorption. The quartz glass absorbs ultraviolet rays having a wavelength of 250 nm or less, ozone generation-related adverse effects on the human body, are prevented, a decrease in transmittance of the quartz glass in the range from near-ultraviolet to visible light due to being colored when irradiated with ultraviolet rays does not occur, absorption build-up or lamp burst-inducing deformation build-up, which is caused by a structural change in the quartz glass that occurs in the range of 200-300 nm when irradiated with ultraviolet rays, is suppressed, and a decrease in transmittance at intended wavelength ranges does not occur even when exposed to ultraviolet rays. The titanium-containing quartz glass having excellent UV absorption is colorless, wherein the average concentration of titanium is 10-500 ppm, the concentration of OH group is 10-350 ppm.
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
C03B 32/00 - Post-traitement thermique des produits vitreux non prévu dans les groupes , p. ex. cristallisation, élimination des inclusions gazeuses ou autres impuretés
C03C 4/08 - Compositions pour verres ayant des propriétés particulières pour verre absorbant sélectivement des radiations de longueurs d'ondes déterminées
16.
Silica glass member for hermetic sealing of ultraviolet SMD LED element and method for manufacturing quartz glass member for ultraviolet led
Provided is a silica glass member for hermetic sealing of an ultraviolet SMD LED element to be suitably used for hermetic sealing of, and as a transmission window material for, a surface mount-type package (SMD) having an ultraviolet LED mounted thereon and configured to emit ultraviolet light in a wavelength range of from 200 nm to 350 nm. The silica glass member for hermetic sealing includes a silica glass substrate, which is homogeneously and integrally formed without an internal boundary, wherein the silica glass substrate has: a first surface on an inside opposed to an SMD LED element; and a second surface on an outside corresponding to the first surface, wherein an outer peripheral portion of the first surface has formed therein a substrate joining plain surface for joining to the container outer periphery joining plain surface, and wherein the second surface on the outside corresponding to the first surface has formed therein a lens-like convex portion configured to process emitted light from the ultraviolet SMD LED element.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
C03B 19/06 - Autres méthodes de façonnage du verre par frittage
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
C03C 4/00 - Compositions pour verres ayant des propriétés particulières
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
The present invention is a crucible for CZ, which is intended to be used for growing a single crystal silicon ingot by the CZ method. The crucible for CZ comprises a bottomed cylindrical graphite crucible and a bottomed cylindrical quartz glass crucible arranged in the inside of the graphite crucible, in which a gap is formed between an inner surface of a bottom part of the graphite crucible and an outer surface of a bottom part of the quartz glass crucible on the center axis of the crucible for CZ in such a manner that the inner surface of the bottom part of the graphite crucible and the outer surface of the bottom part of the quartz glass crucible do not come into contact with each other. It is possible to provide a crucible for CZ, in which a bottomed cylindrical quartz glass crucible for growing a single crystal silicon ingot therein by the CZ method can be self-supported stably when the quartz glass crucible is arranged in the inside of a bottomed cylindrical graphite crucible.
The present invention is a silica glass crucible for growing a monocrystalline silicon ingot by the CZ method. The silica glass crucible has a bottomed cylindrical shape comprising a cylindrical straight body portion, a first curved portion continuous with the lower end of the straight body portion and having a first curvature R1, a second curved portion continuous with the first curved portion and having a second curvature R2, and a bottom portion continuous with the second curved portion. The first curvature R1 and the second curvature R2 satisfy the relationship R1 < R2. The outer surface of the bottom portion constitutes a flat surface orthogonal to the center axis of the silica glass crucible, or a recessed surface that is recessed from the flat surface. Thus, it is possible to provide a bottomed cylindrical silica glass crucible for growing a monocrystalline silicon ingot by the CZ method, the silica glass crucible being capable of self-standing stably when placed inside a bottomed cylindrical graphite crucible.
Provided are such a method of manufacturing a hollow synthetic quartz glass porous preform and method of manufacturing a synthetic quartz glass cylinder as described below: even a soot body having an outer diameter of more than 300 mm can be produced without significantly increasing a load on an apparatus, such as a centrifugal force generated during growth; even when manufactured at low-speed rotation, the soot body is free of any crack or rupture; and a target can be easily extracted. Specifically, provided is a method of manufacturing a hollow porous quartz glass preform by an OVD method, wherein the rotation peripheral speed of the soot body is controlled so as to be practically constant by fluctuating the rotation number of the soot body on the basis of a fluctuating outer diameter of the soot body during growth, and wherein a frequency factor γ calculated by the following equation is set so as to fall within the range of 0.13≤γ<1.0 in a range in which the outer diameter of the soot body is more than 250 mm: γ=S/(L·Nm), where S represents the moving speed (mm/min) of the burners, L represents the moving distance (mm) of the burners, and Nm represents the lowest value (rpm) of the rotation number of the soot body, which is fluctuated.
One aspect is a method for producing a multilayered silica glass body. The method involves producing a multilayered silica glass body in which a transparent silica glass layer is provided on the surface of a siliceous substrate made of a siliceous material. The method includes preparing the siliceous substrate, preparing a silica slurry in which silica particles are dispersed in a liquid, applying the silica slurry to the surface of the siliceous substrate, leveling the silica slurry applied to the surface of the siliceous substrate by applying vibration to the siliceous substrate, drying the leveled silica slurry, and vitrifying the dried silica slurry by heating to form a transparent silica glass layer. As a result, a transparent silica glass layer of uniform thickness is obtained at excellent yield, and a method for producing a multilayered silica glass body easily in a short time is provided.
3 or less when the quartz glass crucible is heated at 1600° C. for 24 hours. This provides a quartz glass crucible suppressed from deformation due to heating and excessive progression of devitrification.
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
Provided are a silica glass yarn and a silica glass cloth which have a signal transmission speed that is made stable through stabilization of a characteristic impedance in addition to a low dielectric constant and a low loss. The silica glass yarn has a yarn habit density of 0.10 piece/cm or less of yarn habits each having a bending point with a radius of curvature of 5 mm or less and a bending angle of 120° or less. It is preferred that the silica glass yarn have a tensile strength of 2.0 GPa or more, and silica glass filaments forming the silica glass yarn each have a breaking start strength of 80.0% or more of the tensile strength of the silica glass yarn.
C03B 37/025 - Fabrication de fibres ou de filaments de verre par étirage ou extrusion à partir de tubes, tiges, fibres ou filaments ramollis par chauffage
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
D02G 3/18 - Filés ou fils faits de substances minérales de verre ou de matériaux similaires
D02G 3/26 - Filés ou fils caractérisés par des particularités structurelles avec des caractéristiques qui dépendent du degré ou du sens de la torsion
D03D 1/00 - Tissus conçus pour faire des articles particuliers
D03D 15/41 - Tissus caractérisés par la matière, la structure ou les propriétés des fibres, des filaments, des filés, des fils ou des autres éléments utilisés en chaîne ou en trame caractérisés par la structure des filés ou des fils à torsion spécifique
There is provided a technique that includes a first annealing step of annealing the reaction tube; a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration; a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water; a second annealing step of annealing the reaction tube; a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water.
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
B08B 3/10 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p. ex. par la chaleur, par l'électricité ou par des vibrations
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
B08B 9/032 - Nettoyage des surfaces intérieuresÉlimination des bouchons par l'action mécanique d'un fluide en mouvement, p. ex. par effet de chasse d'eau
A quartz glass plate has a quartz glass plate body and a quartz glass member adhered to the quartz glass plate body through an adhesive layer, where the adhesive layer contains silica, and a sum of concentrations of Li, Na, and K ions, being alkali metal ions and Ca ions, being alkaline earth metal ions contained in the adhesive layer is 10 ppm by mass or less. Consequently, a step with a uniform thickness can be formed, and a quartz glass plate is not easily damaged by irradiation with a light containing an ultraviolet ray.
G03F 1/64 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation caractérisés par les cadres, p. ex. du point de vue de leur structure ou de leur matériau
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
C03C 4/00 - Compositions pour verres ayant des propriétés particulières
C03C 8/24 - Compositions de scellement par fusion, constituées de frittes vitreuses contenant des additifs, utilisées pour le scellement de matériaux différents, p. ex. verre et métalVerre de scellement
C03C 27/10 - Liaison verre-verre par des procédés autres que la fusion au moyen d'un adhésif spécialement adapté à ce but
The present invention provides a method for producing quartz glass which has unevenness on the glass surface by surface treating quartz glass using a surface treatment liquid, the production method comprising steps for contacting, with the surface of quartz glass in advance, a solvent component which does not interfere with the surface treatment by the surface treatment liquid, and then surface treating the surface with the surface treatment liquid before the solvent component dries to form uneveness having a surface roughness (Ra) of 1.5 to 3.5 μm on the glass surface. This production method is capable of producing quartz glass that has unevenness having a surface roughness (Ra) within the range of 1.5 to 3.5 μm by a process for forming unevenness without microcracks by surface treatment using a surface treatment liquid, the production method being relatively simple and economical without the need to change the concentration of the surface treatment liquid.
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
27.
Quartz glass crucible and method for producing the same
Provided are: a heat-reflecting member which can keep high reflectivity, cannot be broken even under high-temperature environments during the manufacturing and use thereof, does not generate dusts upon use, and can be washed with a chemical solution; and a method for manufacturing a glass member having a heat-reflecting layer included therein and suitable as the heat-reflecting member. A heat-reflecting member having such a laminated structure that quartz glass layers are formed respectively on the upper surface and the lower surface of a siliceous sintered powder layer, wherein, in a part of the siliceous sintered powder layer which is positioned at an edge part of the heat-reflecting member, at least a non-permeable layer and a buffer layer are provided, the non-permeable layer has a thickness larger than 1/2 of the thickness of the siliceous sintered powder layer and cannot be permeated by a gas or a liquid, and the buffer layer is arranged between the non-permeable layer and the siliceous sintered powder layer and has a density that changes in the direction from the non-permeable layer toward the sintered powder layer.
Provided is a reflective member which does not generate dust when used, has high fracture toughness, and allows damage to be prevented in a high temperature environment during production and during use while maintaining high reflectivity. Also provided is a production method for a glass layered member suitable as the reflective member. The reflective member has a layered structure comprising a non-transparent siliceous sintered powder layer having an upper surface and lower surface on which a transparent quartz glass member is formed. The thickness of the non-transparent siliceous sintered powder layer is 0.1 mm or thicker. The film thickness distribution is ±0.05 mm or less. When a load is applied, in a parallel direction to the layered structure, onto the transparent quartz glass member on the upper surface and on the lower surface of the layered structure, the fracture load is 5 N or greater per 1 cm2. At the boundaries between the non-transparent siliceous sintered powder layer and the transparent quartz glass member of the layered structure, the width of a half-transparency section where the non-transparency is between that of the non-transparent siliceous sintered powder layer and the transparent quartz glass member is 0.01 mm or less.
The present invention is a device for flame-polishing the end of a cylindrical quartz glass tube, wherein: the flame polishing device is equipped with a stand on which the quartz glass tube is placed horizontally, and a flame polishing burner that can be positioned at a position facing the end of the quartz glass tube on an extension of the circumference thereof; and the burner is configured to revolve along the circumference of the end of the quartz glass tube. There is thereby provided a flame polishing device capable of uniformly flame-polishing the end of a quartz glass tube to be treated.
Known method for producing a three-dimensional glass object comprises the steps of shaping a glass fibre, wherein the glass fibre provided with a protective sheath is continuously fed to a heating source, the protective sheath is removed under the influence of heat and the glass fibre is softened. According to the invention, in order to facilitate the production of filigree or optically distortion-free and transparent glass objects as much as possible and in particular to enable the adjustment of optical and mechanical properties with high spatial resolution, the glass fibre has a protective sheath with a layer thickness in the region of between 10 nm to 10 µm.
B29C 64/118 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux utilisant un matériau filamentaire mis en fusion, p. ex. modélisation par dépôt de fil en fusion [FDM]
B29C 64/135 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux utilisant des couches de liquide à solidification sélective caractérisés par la source d'énergie à cet effet, p. ex. par irradiation globale combinée avec un masque la source d’énergie étant concentrée, p. ex. lasers à balayage ou sources lumineuses focalisées
A mold for manufacturing a quartz glass crucible by a rotary molding method, having a plurality of grooves that are concentric with respect to a mold rotation axis in at least a straight body portion of an inner surface of the mold, wherein the plurality of concentric grooves are non-penetrating grooves that do not penetrate the mold. This provides a mold for manufacturing a quartz glass crucible by a rotary molding method, having an inner surface made so that it is difficult for quartz powder to slide down when forming a quartz powder compact.
A carbon electrode used for an arc discharge for manufacturing a quartz glass crucible, wherein at least one of a concave pattern and a convex pattern is formed on a surface of the carbon electrode in at least a range of 50 mm to 130 mm in a longitudinal direction of the carbon electrode from an end portion where the arc discharge takes place. Consequently, a carbon electrode that can suppress agglomeration of silica fume on the carbon electrode while manufacturing a quartz glass crucible is provided.
Provided is a titanium-containing quartz glass having excellent UV absorption, wherein the quartz glass absorbs ultraviolet rays having a wavelength of 250 nm or less, ozone generation-related adverse effects on the human body, etc., are prevented, a decrease in transmittance of the quartz glass in the range from near-ultraviolet to visible light due to being colored when irradiated with ultraviolet rays does not occur, absorption build-up or lamp burst-inducing deformation build-up, which is caused by a structural change in the quartz glass that occurs in the range of 200-300 nm when irradiated with ultraviolet rays, is suppressed, and a decrease in transmittance at intended wavelength ranges does not occur even when exposed to ultraviolet rays. The titanium-containing quartz glass having excellent UV absorption is colorless, wherein the average concentration of titanium is 10-500 ppm, the concentration of OH group is 10-350 ppm, each elemental concentration of Al, Li, Na, K, Ca, Mg, Fe, Ni, Cu, Cr, Mo, and V is 50 ppb or less (150 ppb or less in total), and the concentration of chlorine is less than 30 ppm.
4aa of less than 20 nm when the surface has undergone a dry-etch procedure specified in the description, and/or (b) by a dopant distribution having a lateral concentration profile in which maxima in the dopant concentration have a mean spacing of less than 30 µm from one another.
2 particles are deposited on the outer surface of the heat resistant substrate to form a glass particulate deposit. The heat resistant substrate is extracted from the glass particulate deposit to produce the base material.
Provided are a silica glass yarn and a silica glass cloth that have low permittivity and low loss, and that demonstrate a stable signal transmission speed due to stabilized characteristic impedance. This silica glass yarn has a thread crimp crimp-density of 0.10 counts/cm or less, where the thread crimp has a folding point at which the curvature radius is 5 mm or less and the bending angle is 120 degrees or less. Preferably the tensile strength of the silica glass yarn is 2.0 GPa or greater and the breaking initiation force of a silica glass filament constituting the silica glass yarn is 80.0% or greater of the tensile strength of the silica glass yarn.
D02G 3/18 - Filés ou fils faits de substances minérales de verre ou de matériaux similaires
C03B 37/01 - Fabrication de fibres ou de filaments de verre
C03C 25/1095 - Revêtement pour obtenir des tissus enduits
D03D 1/00 - Tissus conçus pour faire des articles particuliers
D03D 15/00 - Tissus caractérisés par la matière, la structure ou les propriétés des fibres, des filaments, des filés, des fils ou des autres éléments utilisés en chaîne ou en trame
D03D 15/12 - Tissus caractérisés par la matière ou la structure du fil ou des autres éléments utilisés en chaîne ou en trame utilisant des fils résistant à la chaleur ou au feu
38.
METHOD FOR PRODUCING MULTILAYERED SILICA GLASS BODY
The present invention is a method for producing a multilayered silica glass body, the method involving producing a multilayered silica glass body in which a transparent silica glass layer is provided on the surface of a siliceous substrate made of a siliceous material, wherein the method for producing a multilayered silica glass body includes a step for preparing the siliceous substrate, a step for preparing a silica slurry in which silica particles are dispersed in a liquid, a step for applying the silica slurry to the surface of the siliceous substrate, a step for leveling the silica slurry applied to the surface of the siliceous substrate by applying vibration to the siliceous substrate, a step for drying the leveled silica slurry, and a step for vitrifying the dried silica slurry by heating to form a transparent silica glass layer. As a result, a transparent silica glass layer of uniform thickness is obtained at excellent yield, and a method for producing a multilayered silica glass body easily in a short time is provided.
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B05D 7/00 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
The present invention pertains to a quartz glass crucible consisting of a bottom part, a curved part and a straight body part and having an outer layer formed of a bubble-containing opaque quartz glass and an inner layer formed of a transparent quartz glass, wherein: the outer layer is configured from multiple layers in at least a part of the straight body part; at least one of the multiple layers is an easy devitrification layer which shows 50-70 devitrification spots per cm3inclusive after heating the quartz glass crucible at 1600°C for 24 hours; and, among the multiple layers, a layer positioned inside the easy devitrification layer in the thickness direction of the quartz glass crucible is a low devitrification layer which shows not more than 2 devitrification spots per cm3after heating the quartz glass crucible at 1600°C for 24 hours. Thus, a quartz glass crucible in which deformation due to heating can be suppressed and excessive progress of devitrification can be suppressed is provided.
The present invention is a quartz glass plate comprising a quartz glass plate main body, and a quartz glass member adhered via an adhesive layer to the quartz glass plate main body. In this quartz glass plate, the adhesive layer comprises silica, and the sum of the concentrations of Ca ions, which are alkaline earth metal ions, and Li, Na, and K ions, which are alkali metal ions, included in the adhesive layer, is 10 ppm by mass or lower. Provided in this manner is a quartz glass plate that allows a level difference of a uniform thickness to be formed, and that is not readily damaged by the irradiation of light comprising UV radiation.
Provided are a quartz glass member with an increased exposure area, which has an increased exposure area to a film formation treatment gas as compared to a member having a flat surface and has the increased exposure area controlled so that a constant adsorption amount of the film formation treatment gas onto a surface thereof is achieved, a method for manufacturing the quartz glass member with an increased exposure area, and a blade with multiple peripheral cutting edges to be used for the method. The quartz glass member with an increased exposure area is a quartz glass member for exposure to a film formation treatment gas to be, in film formation treatment of a semiconductor substrate, placed in a reaction chamber together with the semiconductor substrate to be subjected to the film formation treatment and exposed to the film formation treatment gas, the quartz glass member including: a quartz glass member main body; and a plurality of irregularities formed on a surface of the quartz glass member main body, the exposure area of the quartz glass member to the film formation treatment gas being controlled and increased.
B24B 19/03 - Machines ou dispositifs conçus spécialement pour une opération particulière de meulage non couverte par d'autres groupes principaux pour meuler des gorges, p. ex. sur des arbres, dans des gaines, des tubes, des éléments de joint homocinétique pour meuler des rainures dans des pièces en verre, p. ex. des rainures décoratives
B24D 5/00 - Meules agglomérées, ou meules comportant des segments abrasifs rapportés, conçues pour travailler uniquement par leur périphérieBagues ou accessoires pour le montage des ces meules
B24D 3/34 - Propriétés physiques des corps ou feuilles abrasives, p. ex. surfaces abrasives de nature particulièreCorps ou feuilles abrasives caractérisés par leurs constituants caractérisés par le fait que des additifs augmentent certaines propriétés physiques, p. ex. la résistance à l'usure, la conductibilité électrique, les propriétés d'auto-nettoyage
C03C 19/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par des procédés mécaniques
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
42.
QUARTZ GLASS CRUCIBLE AND METHOD OF MANUFACTURING SAME
aa (pcs/mm3bb (pcs/mm3abbb between the two adjacent sections is at least 10%. As a result, it is possible to impart different functions to different sections of the outer layer of the quartz glass crucible.
The present invention provides a carbon electrode for use in arc discharge for the production of a quartz glass crucible, wherein a recess pattern and/or a protrusion pattern is formed on the surface of the carbon electrode in at least a range of, from a tip portion thereof at which the arc discharge is performed, 50 mm to 130 mm in the longitudinal direction of the carbon electrode. As a result, provided is a carbon electrode on which aggregation of silica fume can be inhibited during production of a quartz glass crucible.
The present invention provides a mold for manufacturing a quartz glass crucible by a rotary molding method, wherein a plurality of grooves that are concentric with respect to a mold rotation axis are provided in at least a straight body section of the inner surface of the mold, the plurality of concentric grooves being non-penetrating grooves which do not pass through the mold. Thus, the mold for manufacturing a quartz glass crucible by a rotary molding method is provided, the mold having the inner surface that is configured to make it difficult for quartz powder to slide off when forming a quartz powder mold body.
3] is the volume thereof and a target birefringence Re [nm/cm] for the synthetic quartz glass after the annealing, and the annealing step is performed at the determined annealing rate v.
Provided are a method for producing a hollow porous quartz glass base material, and a method for producing a synthetic quartz glass cylinder, wherein even when the hollow porous quartz glass base material (soot body) is produced in large weight and high bulk density, the ease of target extraction is maintained and target extraction is performed stably, and a large weight soot body can be produced. The method for producing a hollow porous quartz glass base material comprises: a step for preparing a heat resistant substrate, which has a columnar or cylindrical shape and has an outer surface on which SiO2 particles are deposited, the outer surface having a surface roughness in which the maximum height Rz is less than 9 μm and the arithmetic average roughness Ra is less than 1 μm; a step for rotating the heat resistant substrate and depositing SiO2 particles on the outer surface of the heat resistant substrate to form a glass particulate deposit; and a step for extracting the heat resistant substrate from the glass particulate deposit to produce a hollow porous quartz glass base material.
Provided are a quartz glass member having an increased exposed area, of which the area exposed to a film-forming process gas is increased compared with the exposed area of a flat surface quartz glass member, the increased exposed area being controlled so as to achieve a constant amount of surface adsorption, a method for manufacturing the same, and a blade having multiple peripheral cutting edges for use therewith. A quartz glass member for exposure to a film-forming process gas is disposed, during a semiconductor substrate film-forming process, in a reaction chamber together with a semiconductor substrate to be subjected to the film-forming process, and is exposed to a the film-forming process gas. The quartz glass member comprises a quartz glass member body and a plurality of uneven portions formed on a surface of the quartz glass member body, wherein the area exposed to the film-forming process gas is controlled and increased.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
B24B 19/02 - Machines ou dispositifs conçus spécialement pour une opération particulière de meulage non couverte par d'autres groupes principaux pour meuler des gorges, p. ex. sur des arbres, dans des gaines, des tubes, des éléments de joint homocinétique
B24D 5/00 - Meules agglomérées, ou meules comportant des segments abrasifs rapportés, conçues pour travailler uniquement par leur périphérieBagues ou accessoires pour le montage des ces meules
C03C 19/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par des procédés mécaniques
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
48.
SILICA GLASS MEMBER FOR HERMETIC SEALING OF ULTRAVIOLET SMD LED ELEMENT AND METHOD FOR MANUFACTURING QUARTS GLASS MEMBER FOR ULTRAVIOLET LED
The present invention provides a silica glass member for hermetic sealing of an ultraviolet SMD LED element, the silica glass member being suitably used for hermetic sealing and a transmission window material of a surface mount package (SMD) in which an ultraviolet LED that radiates ultraviolet light having a wavelength range of 200-350 nm inclusive is mounted. A silica glass member for hermetic sealing comprises a silica glass substrate homogeneously and integrally formed with no boundary therein, the silica glass substrate has an inner first surface opposite to an SMD LED element and an outer second surface corresponding to the first surface, a substrate joining flat surface to be jointed to the container outer periphery joining flat surface is formed in an outer peripheral portion of the first surface, and a lens-shaped protruding portion for processing radiated light from the ultraviolet SMD LED element is formed on the outer second surface corresponding to the first surface.
A known diffuser material of synthetically produced, pore-containing quartz glass has a chemical purity of at least 99.9% SiO2, a cristobalite content of not more than 1 %, and a density in the range of 2.0 to 2.18 g/cm3. Starting therefrom, to indicate a diffuser material which is improved with respect to diffuse reflectivity with Lambertian behavior over a wide wavelength range, high material homogeneity and UV radiation resistance, it is suggested according to the invention that the quartz glass has a hydroxyl group content in the range of at least 200 wt. ppm and that at least 80% of the pores have a maximum pore dimension of less than 20 µm.
The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.
Provided are a sizing agent for quartz glass fibers capable of suppressing charging of quartz glass fibers, and suppressing generation of fluff in a production process for quartz glass fibers and a weaving process for a quartz glass cloth, a quartz glass fiber or a quartz glass yarn having applied thereonto the sizing agent, a quartz glass cloth, a prepreg for a printed circuit board, and a product using the quartz glass fiber. The sizing agent for quartz glass fibers includes an aqueous solution containing: a cationic vinyl acetate copolymer emulsion in which a cationic vinyl acetate copolymer having a weight average molecular weight of from 5,000 to 500,000 is dispersed in water; and starch, in which emulsion particles of the cationic vinyl acetate copolymer emulsion have a 50% diameter on a volume basis of from 0.1 μm to 5 μm.
C03C 13/06 - Fibres minérales, p. ex. laine de scories, laine minérale, laine de roche
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
C03C 25/1095 - Revêtement pour obtenir des tissus enduits
C03C 25/28 - Composés macromoléculaires ou prépolymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
The present invention relates to a method for producing synthetic fused quartz by evaporating a feedstock material which contains at least one polymerizable polyalkylsiloxane compound, and supplying the feedstock material vapour to a reaction zone, wherein the feedstock material vapour is converted by oxidation and/or by hydrolysis into SiO2 particles. The feedstock material vapour is passed through a membrane filter as cleaning device to reduce the formation of gel, associated with the production of synthetic fused quartz.
C03B 19/14 - Autres méthodes de façonnage du verre par des procédés à réaction en phase gazeuse
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
53.
QUARTZ GLASS CRUCIBLE FOR SINGLE CRYSTAL SILICON PULLING AND METHOD FOR PRODUCING SAME
The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held within the quartz glass crucible, said method comprising: a step for forming a quartz glass crucible having an outer layer that is formed of opaque quartz glass containing air bubbles and an inner layer that is formed of transparent quartz glass not substantially containing air bubbles; a step for subjecting a region of the inner surface of the thus-formed quartz glass crucible to surface roughening, said region being in contact with a silicon melt when the silicon melt is held within the quartz glass crucible; and a step for crystallizing the surface of the region, which has been subjected to surface roughening, by subjecting the quartz glass crucible, the inner surface of which has been subjected to surface roughening, to a heat treatment. Consequently, it becomes possible to produce a quartz glass crucible for single crystal silicon pulling, which effectively suppresses the formation of a brown ring on the inner surface of the crucible during the single crystal silicon pulling, and which is capable of suppressing disturbance of crystallinity of a single crystal silicon.
Provided are: a silica glass member for wavelength conversion for which environmental tolerance, heat resistance, durability and color rendering properties are high, which can be produced using a low-heat process, and which can efficiently convert wavelengths; and a production method therefor. The silica glass member for wavelength conversion is formed by a silica glass substrate and a silica glass surface layer film formed on the surface of the substrate. The silica glass surface layer film is obtained by coating the surface of the silica glass substrate with a polysilazane-containing solution which contains phosphor particles the average particle diameter of which is 0.1μm-20μm and spherical silica fine particles which are hydrophobic and have an average particle size of 1nm-100nm, drying the coated substrate in the air, and carrying out heating of the same in a water-vapor atmosphere. In the polysilazane-containing solution, the ratio of phosphor particles to the total amount of the polysilazane and phosphor particles is 10:3-7 parts by mass, and the NH group concentration of the silica glass surface layer film is no more than 1000ppm.
C03C 17/02 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par du verre
C03C 17/34 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
55.
METHOD FOR PRODUCING TITANIUM-DOPED SILICA GLASS FOR USE IN EUV LITHOGRAPHY AND BLANK PRODUCED IN ACCORDANCE THEREWITH
The Ti3+ ions present in Ti-doped silica glass cause a brown staining of the glass, as a result of which an inspection of the lens becomes more difficult. It is known to ensure the reduction of Ti3+ ions in favor of Ti4+ ions in Ti-doped silica glass either by way of a sufficiently high proportion of OH-groups, which causes an internal oxidation with out-diffusion of hydrogen, or in the event of a low proportion of OH-groups, by carrying out an oxygen treatment prior to vitrification, which requires a high treatment temperature and special corrosion-resistant furnaces, and is therefore expensive. In order to provide a cost-efficient production method for Ti-doped silica glass, which at a hydroxyl group content of less than 120 ppm shows an internal transmittance (sample thickness 10 mm) of at least 70% in the wavelength range of 400 nm to 1000 nm, based on the flame hydrolytic soot deposition method, it is proposed according to the invention that prior to vitrification, to subject the TiO2 - SiO2 soot body to a conditioning treatment, which comprises a treatment with a nitrogen oxide. The blank produced in this way from Ti-doped silica glass is characterized in that the ratio is Ti3+/Ti4+ ≤ 5 x 10-4.
C03B 19/14 - Autres méthodes de façonnage du verre par des procédés à réaction en phase gazeuse
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
56.
METHOD FOR PRODUCING A MIRROR SUBSTRATE BLANK FROM TITANIUM-DOPED SILICA GLASS FOR EUV LITHOGRAPHY AND SYSTEM FOR DETERMINING THE POSITION OF DEFECTS IN A BLANK
The invention relates to a method for producing a mirror substrate blank made from titanium-doped silica glass for EUV lithography, having a thickness of at least 40 millimeters, having the following method steps: • a) face grinding of the surface of the blank • b) identifying data on defects in a surface layer of the blank, wherein b1) light penetrates the blank at a predetermined angle of incidence a of less than 90° at a location on the flat surface of the blank, b2) the light scatters on a defect in the blank and b3) the scattered light is detected at a distance x from the penetration location on the surface of the blank by a light detection element arranged perpendicularly thereabove; • c) determining the position of the defect in the surface layer based on the data obtained during method step b) • d) partial or complete removal of the surface layer in consideration of the position determination according to method step c) and forming the mirror substrate blank.
G01N 21/958 - Inspection de matériaux transparents
B24B 13/00 - Machines ou dispositifs conçus pour meuler ou polir les surfaces optiques des lentilles ou les surfaces de forme similaire d'autres piècesAccessoires à cet effet
G01N 21/896 - Défauts optiques dans ou sur des matériaux transparents, p. ex. distorsions, criques de surface
57.
SIO2-BASED BARRIER LAYER FOR HIGH TEMPERATURE DIFFUSION AND COATING PROCESSES
The invention relates to a device for modifying semi-conductors using corrosive process gases or for coating objects consisting of silicon, ceramics, glass or graphite, or for producing silicon, said device comprising components which have fused quartz base elements coated with a silicon dioxide layer that has a higher porosity than that of the fused quartz. The invention also relates to a method for doping and coating semi-conductors, for coating objects consisting of glass, silicon, ceramics or graphite, and for producing silicon, in which the claimed device is used. The invention additionally relates to the use of an amorphous silicon dioxide layer on a fused quartz base element for the purpose of reducing corrosion as a result of process gases.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
58.
SILICA VESSEL FOR PULLING UP SINGLE CRYSTAL SILICON AND PROCESS FOR PRODUCING SAME
A silica vessel which is to be used for pulling up single crystal silicon and which has a straight barrel section, a bent section and a bottom section, wherein: the outside portion of the vessel is made of an opaque silica glass that contains bubbles; the inside portion thereof is made of a transparent silica glass; and a mixed silica layer in which both a phase formed from a crystalline silica powder through melting and a phase formed from a non-crystalline silica powder through melting are mixed in a particulate state is present in at least the inner surface portion of the straight barrel section. Thus, provided is a silica vessel which is to be used for pulling up single crystal silicon and in which molten silicon can be inhibited from vibrating at the surface at high temperature.
A method for producing a silica container having a rotational symmetry includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
60.
Single-crystal silicon pulling silica container and method for producing the same
The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
In a known method for drawing a bar, a pipe, or a plate made of quartz glass, grains (3) composed of SiO2 starting material are fed to a melting crucible (1) made of a material having a melting temperature above 2000°C and are heated by means of a heating apparatus (12) and softened to a viscous quartz glass mass (27) in a crucible interior (17) having a vertically oriented center axis (26), which crucible interior is bounded by a side wall and a bottom region, and the viscous quartz glass mass is drawn off vertically downward as a quartz glass strand (5) through a drawing nozzle (7; 9) provided in the bottom region of the melting crucible (1) and the bar, the pipe, or the plate is cut therefrom, wherein a heating apparatus is used that comprises an inner heating apparatus having a heating element (13), which extends within the crucible interior (17) along the interior center axis (26). In order to set a radial temperature profile that is as flat as possible within the quartz glass mass on the basis of said known method in order to thus eliminate restrictions with respect to lateral dimensions of the drawn-off quartz glass strand and thus to make the production of optically and chemically homogeneous quartz glass cylinders easier, even if the lateral dimensions thereof are more than 250 mm, the heating element (13) according to the invention is surrounded by an enveloping element (11) and that a quartz glass strand having a maximum lateral dimension of more than 250 mm is drawn off.
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03B 5/033 - Fusion dans des foursFours, pour autant qu'ils soient spécialement adaptés à la fabrication du verre dans des fours électriques par utilisation de moyens de chauffage à résistance situés au-dessus ou dans le bain de verre, c.-à-d. par chauffage résistif indirect
C03B 17/04 - Façonnage de tubes ou tiges par étirage à partir d'ustensiles fixes ou tournants ou à partir de tuyères
The invention relates to an optical component made of synthetic quartz glass for use in an ArF excimer laser lithography process with an applied wavelength of 193 nm, comprising a glass structure substantially free of oxygen defect sites, a hydrogen content ranging from 0.1 x 1016 molecules/cm3 to 1.0 x 1018 molecules/cm3, an SiH group content of less than 2 x 1017 molecules/cm3, and a hydroxyl group content ranging from 0.1 to 100 wt. ppm, said glass structure having a fictive temperature of less than 1070 °C. The aim of the invention is to allow a reliable prediction of the compacting behavior when using UV laser radiation with the applied wavelength on the basis of a measurement of the compacting behavior using a measured wavelength of 633 nm. This is achieved by an optical component design in which the component undergoes a laser-induced change in the refractive index in response to irradiation by means of a radiation with a wavelength of 193 nm using 5x109 pulses with a pulse width of 125 ns and a respective energy density of 500 µJ/cm2 at a pulse repetition frequency of 2000 Hz, said change totaling a first measured value M193nm when measured using the applied wavelength of 193 nm and totaling a second measured value M633nm when measured using a measured wavelength of 633 nm, wherein M193nm/M633nm < 1.7.
C03C 4/00 - Compositions pour verres ayant des propriétés particulières
C03B 19/14 - Autres méthodes de façonnage du verre par des procédés à réaction en phase gazeuse
C03B 19/01 - Autres méthodes de façonnage du verre par fusion progressive d'une poudre de verre sur un substrat de formage, c.-à-d. accrétion
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03B 32/00 - Post-traitement thermique des produits vitreux non prévu dans les groupes , p. ex. cristallisation, élimination des inclusions gazeuses ou autres impuretés
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02B 1/02 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de cristaux, p. ex. sel gemme, semi-conducteurs
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
63.
METHOD FOR PRODUCING TITANIUM-DOPED SYNTHETIC QUARTZ GLASS
The invention relates to a known method for producing titanium-doped synthetic quartz glass comprising the method steps: (A) provision of a liquid SiO2 feedstock (105), which has more than 60 % by weight of the polyalkyl siloxane D4, (B) evaporation of the liquid SiO2 feedstock (105) into a gaseous SiO2 feed vapour (107), (C) evaporation of a liquid TiO2 feedstock (205) into a gaseous TiO2 feed vapour (207), (D) reaction of the SiO2 feed vapour (107) and of the TiO2 feed vapour to form SiO2 particles and TiO2 particles, (E) deposition of the SiO2 particles and of the TiO2 particles on a deposition face (160), forming a titanium-doped SiO2 soot body (200), (F) vitrification of the titanium-doped SiO2 soot body, forming the synthetic quartz glass, the TiO2 concentration in the synthetic quartz glass being between 5 % by weight and 11 % by weight. According to the invention, the liquid SiO2 feedstock (105) has at least one additional component consisting of the polyalkyl siloxane D3 having a weight fraction mD3 and an additional component consisting of the polyalkyl siloxane D5 having a weight fraction mD5 in a weight ratio mD3/mD5 in a range between 0.01 and 1, and at least 99 % by weight of the provided liquid SiO2 feedstock (105) is evaporated, maintaining the weight ratio mD3/mD5, into the gaseous SiO2 feed vapour (107).
To provide a blank of TiO2-SiO2 glass for a mirror substrate for use in EUV lithography, in which the need for adaptation to optimize the progression of the coefficient of thermal expansion, and consequently also the progression of the zero crossing temperature Tzc, is low, the TiO2-SiO2 glass has at a mean value of the fictive temperature Tf in the range between 920°C and 970°C a dependence of its zero crossing temperature Tzc on the fictive temperature Tf which, expressed as the differential quotient dTzc/dTf, is less than 0.3.
G03B 19/14 - Appareils pour vues fixes à deux objectifs dont l'un forme une image sur un matériau photographique et l'autre forme une image correspondante sur un verre dépoli
C03B 32/00 - Post-traitement thermique des produits vitreux non prévu dans les groupes , p. ex. cristallisation, élimination des inclusions gazeuses ou autres impuretés
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
Provided in a facile manner are a black synthetic quartz glass with a transparent layer, which meets demands for various shapes, has a black portion satisfying required light shield property and emissivity in an infrared region, keeps a purity equivalent to that of a synthetic quartz glass in terms of metal impurities, has a high-temperature viscosity characteristic comparable to that of a natural quartz glass, can be subjected to high-temperature processing such as welding, does not release carbon from its surface, and is free of bubbles and foreign matter in the transparent layer and the black quartz glass, and at an interface between the transparent layer and the black quartz glass, and a production method therefor.
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03C 17/04 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par du verre par frittage de poudre de verre
C03C 4/02 - Compositions pour verres ayant des propriétés particulières pour verre coloré
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
C03C 4/08 - Compositions pour verres ayant des propriétés particulières pour verre absorbant sélectivement des radiations de longueurs d'ondes déterminées
C03B 19/14 - Autres méthodes de façonnage du verre par des procédés à réaction en phase gazeuse
[Problem]
The provision of a synthetic quartz glass heat treatment method that can, by a single heat treatment, and without particular limitations on the OH group concentration distribution of the starting material, regulate the birefringence fast axis direction in the synthetic quartz glass after it has been heat-treated.
[Means of overcoming the problem]
A heat treatment method for synthetic quartz glass whereby columnar synthetic quartz glass having two opposing end faces and a lateral face is heat-treated covered with thermal insulator; wherein said heat treatment is performed using as end face thermal insulator which covers said two end faces, and as lateral face thermal insulator which covers said lateral face, thermal insulators that differ in at least either type or thickness to afford different thermal insulation effects such that the birefringence fast axis direction of said synthetic quartz glass is regulated.
C03B 32/00 - Post-traitement thermique des produits vitreux non prévu dans les groupes , p. ex. cristallisation, élimination des inclusions gazeuses ou autres impuretés
The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container.
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
C03B 19/09 - Autres méthodes de façonnage du verre par fusion de particules de verre dans un moule de mise en forme
C03C 17/00 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement
C03C 17/02 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par du verre
C30B 15/02 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ
In a method for producing cylinders of quartz glass by producing soot bodies, wherein SiO2 particles for mass application are deposited onto a substrate rotating about the longitudinal axis thereof by means of at least two deposition burners, and in the vitrification of the soot bodies to form quartz glass cylinders, a method is carried out before the soot bodies are produced, which method comprises the following steps: a) producing a first test soot body, wherein SiO2 particles for mass application are deposited onto a substrate rotating about the longitudinal axis thereof by means of the at least two deposition burners, b) determining the density distribution of the first test soot body in the axial direction, c) producing a second test soot body, wherein the axial density distribution of the second test soot body is set, preferably homogenized, in dependence on the determined axial density distribution of the first test soot body, d) vitrifying the second test soot body such that a test quartz glass cylinder is obtained, e) determining the mass distribution of the test quartz glass cylinder in the axial direction, f) setting the mass application of SiO2 particles to be deposited onto the substrate by means of the deposition burners in dependence on the determined axial mass distribution of the test quartz glass cylinder in such a way that the mass distribution of vitrified soot bodies produced by means of the deposition burners is improved, or homogenized, with respect to the axial mass distribution of the test quartz glass cylinder.
This silica vessel is for drawing up monocrystalline silicon and has, at the inside, a transparent layer comprising transparent silica glass, and, at the outside, an opaque layer comprising opaque silica glass containing bubbles. The transparent layer is positioned at the inner surface side of the silica vessel and comprises a high OH-group layer containing a concentration of 200-2000 mass ppm of OH groups and a low OH-group layer having an OH-group concentration lower than that of the high OH-group layer, the high OH-group layer containing a concentration of 50-2000 mass ppm of Ba. As a result, provided are: a silica vessel such that when the silica vessel is used in the drawing up of monocrystalline silicon, etching resistance (erosion resistance) of the vessel inner surface with respect to molten silicon is greatly increased by means of the entire surface of the inner surface comprising the transparent silica glass of the vessel being micro-crystallized (glass-ceramicized) within a short period of time following the start of vessel use; and a method for producing such a silica vessel.
This silica vessel is for drawing up monocrystalline silicon and has, at the inside, a transparent layer comprising transparent silica glass, and, at the outside, an opaque layer comprising opaque silica glass containing bubbles. The transparent layer is positioned at the inside surface side of the silica vessel, and comprises a high OH-group layer containing a concentration of 200-2000 mass ppm of OH groups and a low OH-group layer having a lower OH-group concentration than that of the high OH-group layer, Ba being applied at a concentration of 25-1000 μg/cm2 to the inner surface of the high OH-group layer. As a result, provided is a silica vessel such that when the silica vessel is used for drawing up monocrystalline silicon, the etching resistance (erosion resistance) of the vessel inner surface with respect to molten silicon is greatly increased by means of the entire surface of the inner surface comprising transparent silica glass of the vessel being micro-crystallized (glass-ceramicized) within a short period of time following the start of vessel use.
The following method steps are known for producing cylindrical components from synthetic quartz glass containing fluorine: producing a SiO2 soot body, removing hydroxyl groups from the soot body, loading the soot body with fluorine, post-chlorinating the soot body loaded with fluorine, and vitrifying the soot body to form the cylindrical component. In order to achieve distributions in particular of fluorine that are especially reproducibly homogeneous axially and radially, according to the invention it is proposed that a concentration of hydroxyl groups in the range of 1 to 300 weight ppm is set in the soot body upon the drying and an average fluorine content of at least 1500 weight ppm is set upon the loading with fluorine, and that loading with chlorine occurs during the post-chlorination, which loading results in an average chlorine content of at least 50 weight ppm in the synthetic quartz glass after the vitrification, under the further stipulation that the weight ratio of the contents of fluorine and chlorine is less than 30.
A silica container contains a substrate having a rotational symmetry, containing mainly a silica, and gaseous bubbles in a peripheral part of the substrate; a transparent silica glass in an inner peripheral part of the substrate; and an inner layer, formed on an inner surface of the substrate and containing a transparent silica glass; wherein the substrate contains Li, Na, and K in a total concentration of 50 or less ppm by weight; the substrate has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm; the inner layer contains Li, Na, and K in a total concentration of 100 or less ppb by weight and at least one of Ca, Sr, and Ba in a total concentration of 50 to 2000 ppm by weight; and the inner layer has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm.
B65D 13/02 - Réceptacles dont le corps est formé par jonction de plusieurs composants rigides ou sensiblement rigides, constitués en totalité ou principalement en matériaux autres que du métal, des matières plastiques, du bois ou leurs succédanés en verre, poterie, ou autre matériau de céramique
C03B 19/09 - Autres méthodes de façonnage du verre par fusion de particules de verre dans un moule de mise en forme
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
73.
A SILICA CONTAINER FOR PULLING UP MONOCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING SAME
A silica container for pulling up monocrystalline silicon, the silica container having a straight trunk, a curved portion, and a base portion, wherein the silica container for pulling up monocrystalline silicon is characterized in that the outer side of the silica container comprises opaque silica glass containing gas bubbles, and the inner side of the silica container is composed of transparent silica glass substantially devoid of gas bubbles, a silica-glass layer measuring 20 to 1,000 μm in thickness and containing OH groups in a concentration of greater than 300 mass ppm and equal to or less than 3,000 mass ppm or less being formed on the inner surface of the bottom portion. Provided thereby is an inexpensive silica container for pulling up monocrystalline silicon enabling cavity defects; i.e., voids and pinholes, to be minimized in pulled-up monocrystalline silicon.
Producing a silica container includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material; preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes; forming a silica substrate; and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and heated from inside the preliminarily molded article at high temperature making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and heated from the inside at high temperature.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
75.
SILICA VESSEL FOR PULLING MONOCRYSTALLINE SILICON AND METHOD FOR PRODUCING SAME
The present invention is a silica vessel that is for pulling monocrystalline silicon, has a straight body section, a curved section, and a bottom section, and is characterized by the OH group concentration of the straight body section being 30-300 mass ppm, the OH group concentration of the bottom section being no greater than 30 mass ppm, and the OH group concentration difference between the straight body section and the bottom section being at least 30 mass ppm. As a result, provided is a low-cost silica vessel that is for pulling monocrystalline silicon and that can reduce void defects called pinholes and voids in the pulled monocrystalline silicon.
A method for producing synthetic quartz glass using polymerisable polyalkylsiloxane compounds is known and comprises the following method steps (a): evaporating the raw material to create a raw material vapour, (b): supplying the raw material vapour to a reaction zone, in which the raw material is converted to SiO2 particles by means of pyrolysis or hydrolysis, and (c): depositing the SiO2 particles on a deposition surface to form synthetic quartz glass. Starting from said method and in order to largely avoid depositions and the accompanying parameter changes, even during deposition processes that continue for a long time, the invention proposes that the evaporation of the raw material in accordance with method step (a) and/or the supply of the raw material vapour in accordance with method step (b) takes place in the presence of a volatile passivation reagent that reduces the polymerisation tendency of the polymerisable polyalkylsiloxane compound.
Known is a method for producing synthetic quartz glass comprising the following method steps: (a) reacting a carbonic silicon compound-containing raw material with oxygen in a reaction zone into SiO2particles, (b) precipitating the SiO2 particles on a sedimentation area by forming a porous SiO2 soot body containing hydrogen and hydroxyl groups, (c) drying the porous SiO2 soot body, and (d) glazing to the synthetic quartz glass by heating the soot body up to a glazing temperature. In order to indicate a method proceeding therefrom which facilitates a cost-efficient production of quartz glass by means of pyrolysing or hydrolysing a carbon-containing silicon compound using a carbon-containing raw material, the invention describes the production of a soot body with a carbon content within the range of 1 ppm by weight to 50 ppm by weight.
The present invention is a silica container for pulling up single crystal silicon, having an outer layer comprising opaque silica glass containing air bubbles and an inner layer comprising transparent silica glass containing substantially no air bubbles, and having a bottom section, a curved section, and a straight trunk section; the silica container for pulling up single crystal silicon being characterized in that a groove is formed on the surface of the inner layer, the groove being continuous from at least a part of the bottom section to at least a part of the straight trunk section via the curved section. Thereby provided are a silica container for pulling up single crystal silicon in which defects known as voids and pinholes in the pulled-up single crystal silicon can be reduced, and a method for manufacturing a silica container of such description.
Provided is a photomask substrate for titania-silica glass EUV lithography having the high degree of flatness required for an EUV lithography photomask substrate and being capable of reducing the cost, treatment time, and the like required for surface treatment such as plasma etching and ion beam etching. The photomask substrate measures 152.4 × 152.4 × 6.35 mm; the refractive index homogeneity Δn within a range of 142.4 × 142.4 mm in a middle section of the substrate is no more than 3 × 10-4; only one maximum or minimum value for the refractive index is present within a range of 20 × 20 mm in a center section within the 152.4 × 152.4 mm plane; and the difference between the highest position and the lowest position within a range of 142.4 × 142.4 mm in the middle section within the 152.4 × 152.4 mm plane is no more than 50 nm.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
C03B 8/04 - Production de verre par d'autres procédés que la fusion par des procédés de réaction en phase gazeuse
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
80.
METHOD FOR PRODUCING SYNTHETIC QUARTZ GLASS BY DEPOSITION OF SiO2 SOOT FROM THE VAPOR PHASE ON A SUPPORT
A known method for producing synthetic quartz glass comprises the following method steps: providing a liquid SiO2 starting material that contains octamethylcyclotetrasiloxane D4 as a main component; vaporizing the SiO2 starting material in a vapor starting material; converting the vapor starting material to form SiO2 particles; depositing the SiO2 particles on a deposition surface to form a porous SiO2 soot body; and vitrifying the SiO2 soot body to form the synthetic quartz glass. In order to, proceeding therefrom, produce large-volume, cylindrical soot bodies having an outer diameter of more than 300 mm and an improved material homogeneity, the invention proposes that the liquid starting material contains additional components, comprising hexamethylcyclotrisiloxane D3 and the linear homolog thereof with a weight proportion mD3, decamethylcyclohexasiloxane D6 and the linear homolog thereof with a weight proportion mD6 and tetradecamethylcycloheptasiloxane D7 and/or hexadecamethylcyclooctasiloxane D8 and the linear homologs thereof with a weight proportion mD7+, the weight proportion mD3/mD6 being in a range between 0.05 and 90 and the weight proportion mD7+ being at least 20 ppm by weight.
A known method for producing synthetic quartz glass comprises the following method steps: providing a liquid SiO2 starting material that contains octamethylcyclotetrasiloxane D4 as a main component; vaporizing the SiO2 starting material in a vapor starting material; converting the vapor starting material to form SiO2 particles; depositing the SiO2 particles on a deposition surface to form a porous SiO2 soot body; and vitrifying the SiO2 soot body to form the synthetic quartz glass. In order to, proceeding therefrom, produce large-volume, cylindrical soot bodies having an outer diameter of more than 300 mm and an improved material homogeneity, the invention proposes that the liquid starting material contains additional components, comprising hexamethylcyclotrisiloxane D3 and the linear homolog thereof with a weight proportion mD3, decamethylcyclohexasiloxane D6 and the linear homolog thereof with a weight proportion mD6 and tetradecamethylcycloheptasiloxane D7 and/or hexadecamethylcyclooctasiloxane D8 and the linear homologs thereof with a weight proportion mD7+, the weight proportion mD3/mD6 being in a range between 0.5 and 500 and the weight proportion mD7+ being at least 20 ppm by weight.
Common solar radiation receivers are equipped with a chamber for transmission of an operating gas which is directed along to an absorber for solar radiation for thermal absorption. The absorber has a dome-shaped entry window made of quartz glass, wherein the inner side facing the absorber assumes a nominal interior temperature Ti of at least 950°C during proper use, preferably at least 1000°C, whereas the outer side facing away from the absorber is exposed to the environment and subject to risk of devitrification. The invention relates to modifying the known solar radiation receiver so that a high absorber temperature can be set and thus a high efficiency of the solar thermal heating is enabled, without increasing the risk of devitrification in the region of the outer side of the entry window.
A device and method for manufacturing by electrospinning a nonwoven fabric comprising glass filaments having ultrafine diameters (e.g., having diameters 0.3-5μm), and in particular, for manufacturing an ultrathin glass nonwoven fabric (e.g., having a 50μm-1mm thickness) for forming high frequency circuit substrates with a low dielectric constant and low loss, and a glass nonwoven fabric are provided. This glass nonwoven fabric manufacturing device is provided with a glass material supply means for supplying a rectangular glass material, a conveyance means for conveying at a prescribed velocity said supplied rectangular glass material, a guide electrode means which feeds said conveyed rectangular glass material, is formed from a conductive material and is an electrode, a heating means for melting and softening said fed rectangular glass material, a target member which comprises a conductive material arranged at a prescribed interval opposite of said guide electrode means, and a DC power supply means for applying a DC voltage between the guide electrode means and the target member.
D04H 1/728 - Non-tissés formés uniquement ou principalement de fibres coupées ou autres fibres similaires relativement courtes caractérisés par la méthode de formation des voiles ou couches, p. ex. par la réorientation des fibres les fibres étant disposées au hasard par électrofilage
D01D 5/08 - Méthodes de filage à partir de masses en fusion
A device and method for manufacturing by electrospinning a nonwoven fabric comprising glass filaments having ultrafine diameters (e.g., having diameters 0.3-5μm), and in particular, for manufacturing an ultrathin glass nonwoven fabric (e.g., having a 50μm-1mm thickness) for forming high frequency circuit substrates with a low dielectric constant and low loss, and a glass nonwoven fabric are provided. This glass nonwoven fabric manufacturing device is provided with a glass material supply means for supplying a rectangular glass material, a conveyance means for conveying said supplied rectangular glass material at a prescribed velocity, a guide electrode means which feeds said conveyed rectangular glass material, is formed from a conductive material and is an electrode, a heating means for melting and softening said fed rectangular glass material, a target member which comprises a conductive material arranged at a prescribed interval opposite of said guide electrode means, and a DC power supply means for applying a DC voltage between the guide electrode means and the target member.
C03B 37/025 - Fabrication de fibres ou de filaments de verre par étirage ou extrusion à partir de tubes, tiges, fibres ou filaments ramollis par chauffage
85.
Metal and graphite mold and method of making a crucible
A mold for making a fused silica crucible includes a cylindrical can having an interior bore. A graphite insert is received in the bore and has an upper surface adapted to form the lower surface of the crucible while the interior bore of the can forms the side wall of the crucible. Silica grain is deposited in the mold while it rotates. Bores formed in the can above the insert and in the insert draw air through the silica during fusion.
The invention proceeds from a known laser system comprising a laser medium comprising a host material composed of quartz glass, a pump light source acting on the laser medium, and an optical resonator. In order to provide an inexpensive laser system comprising a laser material on the basis of quartz glass, said laser material being readily deformable and tunable in a wide wavelength range, which is suitable for emitting new laser frequencies right into the UV range and which additionally has potential for use in a short-pulse laser system, the invention proposes that the host material is synthetically produced quartz glass having a concentration of oxygen deficiency defects of at least one 1 x 1016 cm-3 and a hydrogen concentration of less than 5 x 1016 molecules/cm3.
C03C 4/00 - Compositions pour verres ayant des propriétés particulières
C03C 4/12 - Compositions pour verres ayant des propriétés particulières pour verre luminescentCompositions pour verres ayant des propriétés particulières pour verre fluorescent
C03C 13/04 - Fibres optiques, p. ex. compositions pour le cœur et la gaine de fibres
87.
RECTANGULAR SILICA CONTAINER FOR PRODUCTION OF POLYCRYSTALLINE SILICON INGOT, POROUS SILICA PLATE AND METHOD FOR PRODUCING SAME
The present invention is a rectangular silica container for producing a polycrystalline silicon ingot by solidifying a silicon melt. The rectangular silica container for the production of a polycrystalline silicon ingot is configured by combining plane-parallel porous silica plates that are formed of porous silica. The bulk density of the porous silica plates is lower in the inner portions than in the surface portions of the plane-parallel surfaces. Consequently, impurity contamination of the silicon melt and the polycrystalline silicon ingot is suppressed and an extremely low-cost rectangular silica container for the production of a polycrystalline silicon ingot having excellent mold releasability is provided.
B22C 1/00 - Compositions des matériaux réfractaires pour moules ou noyauxLeur structure granulaireCaractéristiques chimiques ou physiques de la mise en forme ou de la fabrication des moules
C01B 33/12 - SiliceSes hydrates, p. ex. acide silicique lépidoïque
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
88.
GLASS POLYGONAL TUBE, METHOD FOR MANUFACTURING SAME, AND CONTAINER
To provide a glass polygonal tube of excellent dimensional precision for which increase in size is possible, to provide a method of manufacturing a glass polygonal tube that affords the simple manufacture of this glass polygonal tube, and to provide a container of excellent dimensional precision for which increase in size is possible. Solving means: A method of manufacturing a glass polygonal tube formed by bonding at least four heat-resistant glass plates using a slurry-like adhesive having SiO2 fine particles as a principal component, which method comprising the steps: (A) a step for joining heat-resistant glass plates using a slurry-like adhesive having SiO2 fine particles as a principal component to form a joined body; and (B) a step for heating the aforementioned joined body to at least 100°C to bond the aforementioned heat-resistant glass plates.
C03C 27/10 - Liaison verre-verre par des procédés autres que la fusion au moyen d'un adhésif spécialement adapté à ce but
C03C 8/24 - Compositions de scellement par fusion, constituées de frittes vitreuses contenant des additifs, utilisées pour le scellement de matériaux différents, p. ex. verre et métalVerre de scellement
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
89.
METHOD FOR PRODUCING SYNTHETIC QUARTZ GLASS GRANULES
The production of synthetic quartz glass granules by vitrifying a free-flowing SiO2 granulate from porous granulate particles is time-consuming and expensive. The aim of the invention is to provide a method that allows a continuous and cost-effective production of dense synthetic quartz glass granules on the basis of porous SiO2 granulate. According to the invention, this is achieved by the following method steps: (a) granulating pyrogenically produced silicic acid with the formation of the SiO2 granulate made of porous granulate particles; (b) drying the SiO2 granulate; (c) cleaning the SiO2 granulate by heating in an atmosphere containing halogen in a cleaning furnace; and (d) vitrifying the cleaned SiO2 granulate by sintering in a vitrifying furnace with the formation of quartz glass granules. The drying, cleaning, and vitrifying of the SiO2 granulate are each carried out in a rotary tube of a rotary tube furnace, said rotary tube rotating about a central axis. The rotary tube furnace used for vitrifying has a rotary tube, the inner wall of which consists of a ceramic material with a higher softening temperature than undoped quartz glass. Said rotary tube is flooded with a low-nitrogen treating gas or flushed with the treating gas, said gas containing at least 30 vol.% helium and/or hydrogen.
The invention is based on the object of specifying a cost-effective process for producing a quartz glass crucible having an inner layer of transparent, synthetically produced quartz glass which is distinguished by a long service life. According to the invention, this object is achieved by a process comprising the following process steps: (a) a gas-permeable crucible substrate having an inner side is produced by solidifying at least the surface of a layer of SiO2 particles, (b) a porous SiO2 soot layer is deposited on at least a partial area of the inner side of the crucible substrate by vapour deposition, and (c) the porous SiO2 soot layer and at least part of the crucible substrate are subjected to vacuum-assisted sintering by means of an arc and under a vacuum which acts over the wall of a vacuum fusion mould, to form the quartz glass crucible and the inner layer of transparent quartz glass.
In a known drawing method for producing a cylindrical component from quartz glass, a quartz glass strand (2) is continuously drawn off from a softened quartz glass composition (13) vertically downwards in the drawing direction (3), a piece (15) with a weight G is detached from the free end of the strand at a time t1 and the cylindrical component is produced from the piece (15). When the piece (15) is detached, there may be a sudden reduction in weight, which leads to fluctuations in the drawing-off control. To counteract this, it is proposed according to the invention that a weight compensating force which acts counter to the drawing direction (3), increases over time and completely or partially compensates for the weight G of the piece (15), is applied to the piece to be detached at a time t0 before t1.
Disclosed is a quartz glass crucible used for pulling silicon single crystals and capable of efficiently suppressing liquid surface vibration when pulling silicon single crystals; also disclosed is a manufacturing method of said quartz glass crucible. The disclosed quartz glass crucible for pulling silicon single crystals grows silicon single crystals by bringing a seed crystal into contact with a silicon melt and performing pulling. Said crucible includes a crucible base body of a semitransparent quartz glass layer, and a transparent synthetic quartz glass layer formed on the inner walls of the crucible base body; said crucible further has a straight body portion open at the top, and a bottom portion formed in an arc shape on said straight body. A rough surface band region is provided on one portion of the surface of the straight body portion of the transparent synthetic quartz glass layer, and the region of the surface of the transparent synthetic quartz glass layer that is below the rough surface band region is smooth. The arithmetic mean roughness (Ra) of the rough surface band region is 2-9μm, and the rough surface band region is provided such that the liquid surface of the silicon melt in an initial state is in contact with the rough surface band region.
A method for producing a silica container having a rotational symmetry is provided. The method includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 13/04 - Produits stratifiés composés essentiellement d'une substance à prise hydraulique, p. ex. du béton, du plâtre, du ciment, ou d'autres matériaux entrant dans la construction comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 5/16 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches est formée de particules, p. ex. de copeaux, de fibres hachées, de poudre
C03B 19/01 - Autres méthodes de façonnage du verre par fusion progressive d'une poudre de verre sur un substrat de formage, c.-à-d. accrétion
C03B 37/00 - Fabrication ou traitement de copeaux, de fibres ou de filaments obtenus à partir de verre, substances minérales ou scories ramollies
C03B 27/012 - Trempe des articles de verre par traitement thermique, p. ex. pour la cristallisationTraitement thermique d'articles en verre avant la trempe par refroidissement
C03B 29/00 - Réchauffage des articles de verre pour ramollir ou fondre leurs surfacesPolissage par la chaleurFusion des bords
C03B 11/08 - Structure du poinçon ou du moule pour la fabrication d'articles pleins, p. ex. des lentilles
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C03B 19/09 - Autres méthodes de façonnage du verre par fusion de particules de verre dans un moule de mise en forme
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
94.
QUARTZ GLASS COMPONENT HAVING AN OPAQUE INNER ZONE AND METHOD FOR PRODUCING SAME
The invention relates to reproducibly producing a quartz glass component having at least one opaque inner zone acting as a scattering or reflecting layer, characterized by a smooth and dense surface and high dimensional stability, wherein according to the invention a quartz glass component made of transparent quartz glass is provided, and a laminar opaque inner zone is generated within the quartz glass component at a depth of 300 µm or more by configuring defects of the glass structure by means of internal laser engraving.
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p. ex. par irradiation
C03C 23/00 - Autres traitements de surface du verre, autre que sous forme de fibres ou de filaments
95.
Silica container and method for producing the same
A method for producing a silica container that includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material (silica particles), preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes, forming a silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and at the same time heated from inside the preliminarily molded article at high temperature thereby making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and at the same time heated from the inside at high temperature.
Disclosed is a process for the production of a silica vessel which comprises both a base body that contains bubbles in the outer peripheral portion and an inner layer that consists of transparent silica glass and that is formed on the inner surface of the base body. The process comprises: preparing a base body-forming raw material powder that has a total concentration of Li, Na and K of 50wt.ppm or less and an inner layer-forming raw material powder that contains Ca, Sr and Ba in a total amount of 50 to 2000wt.ppm; forming a preform for the base body in a mold; forming a preform for the inner layer on the inner surface of the perform for the base body; and heating the thus-obtained composite preform in a gaseous atmosphere that contains hydrogen, helium, or a mixture of both in an amount exceeding 10vol% by an electric discharge heating-melting method from the inside of the composite preform to convert the outer peripheral portion of the preform for the base body into a sintered body and to convert the inner peripheral portion of the preform for the base body and the preform for the inner layer into a molten glass body. Thus, both a process by which a silica vessel with high dimensional accuracy and high heat resistance can be produced at a low cost and such a silica vessel are provided.
A silica crucible is made in a mold cavity of the type in which ambient atmosphere can be drawn through silica grain in the cavity. In one embodiment, a silica grain layer is formed in the mold cavity and gas, which may comprise helium, nitrogen, hydrogen, or a mixture thereof, is introduced into the mold cavity. The silica grain layer is heated while substantially no ambient atmosphere is drawn through the silica grain. Thereafter, at least a portion of the silica grain layer is fused while drawing ambient atmosphere through the silica grain. The gas displaces air in the mold cavity thereby reducing nitrogen oxides and ozone.
Provided is a method for producing a silica container equipped with a body which has rotational symmetry, uses silica as the main component, and contains bubbles at least in the outer circumference portion, and an inner layer which is formed on the inner surface of the body, and comprises transparent silica glass. A silica powder having a particle diameter of 10 to 1000µm, containing Ca, Sr, and Ba at a total concentration of 50 to 5000 wt.ppm, and the hydrogen molecule discharge amount of which is 3×1016 to 3×1019 molecule/g when heated at 1000°C in a vacuum is prepared as the raw material power for forming the inner layer, and said inner layer is formed from the silica powder which is the raw material powder for forming the inner layer. As a consequence, a silica container which has a high dimensional accuracy and a high durability even at high temperatures, and the inner wall of which is a transparent silica glass layer having a thickness in which essentially no air bubbles are contained is provided. Also provided are a low cost method for producing said silica container, a silica powder for producing such silica containers, and a method for producing said silica powder.
In a known method, a SiO2 slip layer is applied to a basic quartz glass body by means of spraying on an SiO2 slip, the slip layer is dried and sintered to form an SiO2-containing functional layer. In order to permit the reproducible production of a functional quartz glass layer, even in the case of surfaces that are curved or inclined with respect to the vertical, having high layer thicknesses which satisfy high requirements on the layer homogeneity, the invention proposes that the slip contain the following components in a dispersion liquid: splintery, amorphous SiO2 granules having a grain size distribution having a D50 value in the range of 3 µm to 30 µm and having a proportion by weight of at least 10% by weight, based on the total solids content; spherical, amorphous SiO2 particles having a particle size distribution having a D50 value in the range of 1 µm to 50 µm and having a proportion by weight of at least 30% by weight, based on the total solids content; SiO2 nano particles having particle sizes of less than 100 nm and having a proportion by weight between 0.2% and 10% by weight, based on the total solids content; and a non-ionic, alkali-free surfactant having a proportion in the range of 0.005 to 0.5%, based on the volume of the dispersion liquid.
On the basis of a known method for producing a blank of titanium-doped glass with a high silica content (glass) for a mirror substrate for use in EUV lithography which has a surface region that has an outer contour, is intended to be provided with a reflective coating and is specified as a highly loaded zone when the mirror substrate is used as intended, in order to provide a blank which can be produced at low cost and nevertheless meets high requirements with respect to homogeneity and freedom from blisters and striae, a procedure which comprises the following method steps is proposed: (a) producing a front body of titanium-doped high-quality glass with dimensions more than large enough to enclose the outer contour, (b) producing a cylindrical supporting body from titanium-doped glass, (c) bonding the front body and the supporting body to form a composite body, and (d) working the composite body to form the mirror substrate blank, wherein the step of producing the front body comprises a homogenizing process involving twisting a starting body obtained in the form of a strand by flame hydrolysis of a silicon-containing compound to form a front body blank, and the supporting body is formed as a monolithic glass block with less homogeneity than the front body.
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