This invention provides a polymer type conductive paste that can provide a highly reliable conductive layer even in high humidity environments. The polymer type conductive paste in accordance with the embodiment of the present invention contains conductive metal powder, binder resin, organic solvent, and specific additives, wherein said binder resin is polyvinyl butyral resin, wherein said specific additives are one or more selected from the group consisting of stearic acid, lauric acid, octadecyl butanedioic acid, benzoic acid, acetamidophenol, aminophenol, catechol, and N,N-bis(2-hydroxyethyl)coco alkylamine, and wherein said specific additives are contained at the content of not less than 0.01 parts by mass and not more than 3.0 parts by mass per 100 parts by mass of said conductive metal powder.
C09D 7/61 - Adjuvants non macromoléculaires inorganiques
C09D 7/63 - Adjuvants non macromoléculaires organiques
C09D 129/14 - Homopolymères ou copolymères d'acétals ou de cétals obtenus par polymérisation d'acétals ou de cétals non saturés ou par post-traitement de polymères d'alcools non saturés
H01G 9/042 - Électrodes caractérisées par le matériau
This conductive paste is characterized by comprising a conductive powder, a binder resin, and an organic solvent, the binder resin containing one or more polybutenes, and the weight average molecular weight (Mw) of all the polybutene components being 3,700 or greater. According to the present invention, it is possible to provide a conductive paste that can be used in various applications, can form an electrode layer having sufficient adhesion to a base layer in the manufacture of a laminated component with a high level of lamination, and can prevent the occurrence of lamination deviation when fabricating and pressure bonding a laminate structure by laminating a plurality of layers of a coating film obtained using the conductive paste.
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
Provided is a thermosetting conductive resin composition comprising: a conductive powder and a resin binder, in which the conductive powder comprises a flake-shaped conductive powder; the resin binder comprises a thermosetting silicone resin having hydroxyl groups; and 25.0% by mass or more of the resin binder is the thermosetting silicone resin having hydroxyl groups. The present invention can provide a thermosetting conductive resin composition capable of forming conductive resin layers having high moisture resistance and excellent conductivity even when multiple kinds of resins including a silicone resin are used as resin binders.
C08L 63/00 - Compositions contenant des résines époxyCompositions contenant des dérivés des résines époxy
H01G 9/00 - Condensateurs électrolytiques, redresseurs électrolytiques, détecteurs électrolytiques, dispositifs de commutation électrolytiques, dispositifs électrolytiques photosensibles ou sensibles à la températureProcédés pour leur fabrication
H01G 9/042 - Électrodes caractérisées par le matériau
5.
SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM
The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
6.
INK, METHOD FOR MANUFACTURING INK, AND METHOD FOR MANUFACTURING MULTILAYER CERAMIC CAPACITOR
An ink comprising: a metal nanoparticle with at least a portion of the surface of the metal nanoparticle coordinated by a hydroxycarboxylic acid ligand, the hydroxycarboxylic acid ligand comprising a carboxyl group and at least one hydroxyl group; and a solvent.
Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
B82Y 40/00 - Fabrication ou traitement des nanostructures
C09K 11/54 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du zinc ou du cadmium
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
8.
METHOD FOR PRODUCING LITHIUM-LANTHANUM-ZIRCONIUM COMPOSITE OXIDE POWDER AND LITHIUM-LANTHANUM-ZIRCONIUM COMPOSITE OXIDE POWDER
The method for producing a lithium-lanthanum-zirconium composite oxide powder comprises: a first step for preparing a lanthanum zirconate powder having an average particle size of 20 nm to 200 nm, a lanthanum compound, and a lithium compound, respectively; a second step for depositing the lanthanum compound and the lithium compound on the surface of the lanthanum zirconate powder to generate a precursor powder; a third step for obtaining a lithium-lanthanum-zirconium composite oxide powder by heating the precursor powder for from one second to 30 seconds at from 900°C to 1200°C with the precursor powder dispersed in a carrier gas, using a gas having an oxygen partial pressure of from more than 1.0×10-30 atm to 1.0 atm as the carrier gas; and a fourth step for recovering the lithium-lanthanum-zirconium composite oxide powder obtained in the third step. According to the present invention, it is possible to suppress the scattering of Li and obtain a small-particle-size LLZ powder having excellent storage stability.
Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle is a core-shell type semiconductor nanoparticle including a core containing In and P and one or more layers of shells, wherein at least one of the shells is formed of ZnSe. The ligand includes one or more kinds of mercapto fatty acid esters represented by the following general formula (1): HS—R1—COO—R2 (1). The mercapto fatty acid ester has an SP value of 9.20 or more. The mercapto fatty acid ester has a molecular weight of 700 or less, and the average SP value of the entire ligand is 9.10 to 11.00. The present invention provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a polar dispersion medium while keeping high fluorescence quantum yield (QY) of semiconductor nanoparticles.
C09K 11/06 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances organiques luminescentes
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
C08G 65/32 - Polymères modifiés par post-traitement chimique
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
10.
METHOD FOR PRODUCING METAL POWDER, AND METAL POWDER
This method is for producing a metal powder and comprises: a first step for dispersing, in a gas phase by means of a carrier gas, a raw material metal powder produced by reducing metal ions in a liquid phase; a second step for subjecting the raw material metal powder dispersed in the gas phase to a thermal treatment at a temperature of at least (Tm-100)°C (where Tm°C is the melting point of the raw material metal powder) to produce a metal powder precursor dispersed in the gas phase; and a third step for cooling the metal powder precursor dispersed in the gas phase to produce a metal powder. With the present invention, it is possible to produce a metal powder having excellent crystallinity and a narrow particle size distribution.
B22F 9/06 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau liquide
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
11.
ELECTROLUMINESCENT DEVICES WITH HYBRID TRANSPORT LAYERS
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.
H10K 50/11 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL]
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 85/60 - Composés organiques à faible poids moléculaire
H10K 101/40 - Interrelation des paramètres entre plusieurs couches ou sous-couches actives constitutives, p. ex. valeurs HOMO dans des couches adjacentes
H10K 102/00 - Détails de structure relatifs aux dispositifs organiques couverts par la présente sous-classe
12.
THERMALLY STABLE POLYTHIOL LIGANDS WITH PENDANT SOLUBILIZING MOIETIES
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polythiol ligands with pendant moieties. The polythiol ligand with pendant moieties increase the solubility of the nanostructures in solvents and resins. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C07C 319/18 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures par addition de thiols à des composés non saturés
C07C 323/22 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'oxygène, liés par des liaisons doubles, liés au même squelette carboné
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/74 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'arsenic, de l'antimoine ou du bismuth
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
Disclosed are examples of chemical compounds useful as ligands for photoluminescent particles, such as nanoparticles, populations of the particles comprising such ligands, films and other compositions comprising the ligated particles, and methods of synthesis.
C07C 229/16 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant un seul groupe amino et un seul groupe carboxyle liés au squelette carboné l'atome d'azote du groupe amino étant lié de plus à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons à des atomes de carbone de radicaux hydrocarbonés substitués par des groupes amino ou carboxyle, p. ex. acide éthylènediaminetétra-acétique, acides iminodiacétiques
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
A composition comprises a carrier matrix; a plurality of photoluminescent nanostructures distributed within the carrier matrix; a hindered amine stabilizer; and at least one of (i) an alkylalkoxysilane and a coordination polymer, or (ii) a silanized coordination polymer.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09D 7/61 - Adjuvants non macromoléculaires inorganiques
C09D 7/63 - Adjuvants non macromoléculaires organiques
Provided is a semiconductor nanoparticle complex having both improved fluorescence quantum yield and improved heat resistance. A semiconductor nanoparticle complex according to an embodiment includes a semiconductor nanoparticle complex in which two or more ligands including a ligand I and a ligand II are coordinated to the surface of a semiconductor nanoparticle, wherein: the ligands are composed of an organic group and a coordinating group, the ligand I has one mercapto group as the coordinating group, and the ligand II has at least two or more mercapto groups as the coordinating groups.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about. 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
An insulated covered soft magnetic powder in accordance with embodiments of the present invention comprises a soft magnetic powder having an iron content of 99.0 wt. % or more wherein at least part of the surface of the soft magnetic powder is covered with an insulating covering oxide. The insulated covered soft magnetic powder has a 50% volume cumulative particle diameter (D50) by laser diffraction/scattering particle size distribution measurement of 0.01 μm to 2.0 μm, an oxygen content of 0.1 wt. % to 2.0 wt. %, a carbon content and a nitrogen content of the entire insulated covered soft magnetic powder of 0 wt. % to 0.2 wt. %, and 0 wt. % to 0.2 wt. %, respectively. The total content of oxygen, carbon and nitrogen of the insulated covered soft magnetic powder is 0.1 wt. % to 2.0 wt. % of the entire insulated covered soft magnetic powder.
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
18.
Semiconductor nanoparticle aggregate, semiconductor nanoparticle aggregate dispersion liquid, semiconductor nanoparticle aggregate composition, and semiconductor nanoparticle aggregate cured film
A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C08K 9/02 - Ingrédients traités par des substances inorganiques
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
19.
Films comprising bright silver based quaternary nanostructures
Disclosed are films comprising Ag In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm when excited using a blue light source with a wavelength of about 450 nm.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
CGG of 0.3-2.0 μm. According to the present invention, a thin and dense terminal electrode having excellent continuity, even when fired at a low temperature, can be formed while maintaining high productivity. Moreover, an electronic component having a thin and dense terminal electrode having excellent continuity, even when fired at a low temperature, can be manufactured while maintaining high productivity.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Chemical substances in the nature of nanomaterial and fluorescent chemicals in powder or liquid form, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; nanomaterials, namely reagents of semi-conductor nanocrystals for scientific and research use; chemicals, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; unprocessed plastics in primary form; conductive adhesives for use in industry, namely, conductive pastes Quantum dots, namely, crystalline semi-conductor materials for household appliances; quantum dots, namely, crystalline semi-conductor materials for touchscreen devices or lighting apparatus; quantum dots, namely nano crystalline semi-conductor materials; quantum dot dispersions namely, crystalline semi-conductor materials; quantum dot ink namely, crystalline semi-conductor materials; quantum dot film, namely, crystalline semi-conductor materials; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes [QLED]; electronic machines and apparatus and their parts, namely, sensors and detectors; electrical power distribution and control machines and apparatus; rotary converters; phase modifiers; solar cells; electrical cells; electric wires and cables; electrical conductors, namely, conductive pastes; electric resistance namely, resistance pastes; magnetic cores; resistance wires; electrodes
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Chemical substances in the nature of nanomaterial and fluorescent chemicals in powder or liquid form, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; nanomaterials, namely reagents of semi-conductor nanocrystals for scientific and research use; chemicals, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; unprocessed plastics in primary form; conductive adhesives for use in industry, namely, conductive pastes Quantum dots, namely, crystalline semi-conductor materials for household appliances; quantum dots, namely, crystalline semi-conductor materials for touchscreen devices or lighting apparatus; quantum dots, namely nano crystalline semi-conductor materials; quantum dot dispersions namely, crystalline semi-conductor materials; quantum dot ink namely, crystalline semi-conductor materials; quantum dot film, namely, crystalline semi-conductor materials; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes [QLED]; electronic machines and apparatus and their parts, namely, sensors and detectors; electrical power distribution and control machines and apparatus; rotary converters; phase modifiers; solar cells; electrical cells; electric wires and cables; electrical conductors, namely, conductive pastes; electric resistance namely, resistance pastes; magnetic cores; resistance wires; electrodes
09 - Appareils et instruments scientifiques et électriques
Produits et services
Semiconductors; light emitting diodes; quantum dot lights emitting diodes; visual displays, namely, computer display monitors, digital signage display panels; electric luminescent display panels; luminous signs; films, namely, optical films containing semiconductor nanoparticles for use in backlighting units of electronic displays; optical film components in the nature of color converters and wavelength converters for LED driven LCDs; magnetic cores; nanomaterials, namely, nanoscale electronic components in the nature of color converters, wavelength converters, light-emitting diodes, and sensors for use in the manufacture of semiconductors, electronic components and subsystems, light emitting diodes, lasers, computer hardware, telecommunications hardware, data storage hardware, circuit boards, visual displays, photovoltaics, solar cells, chromophores, fluorophores, biosensors and chemical sensors; quantum dots, namely, crystalline semiconductor materials for use in consumer electronics, touch screen devices, and lighting products; nanomaterials electrical conductors used in nanowires, nanoribbons, nanorods, and nanotubes for use in lighting products; quantum dots, namely, nanocrystalline semi-conductor materials; quantum dot dispersions, namely, crystalline semi-conductor materials; quantum dot inks, namely, crystalline semi-conductor materials; quantum dot films, namely, crystalline semi-conductor materials; quantum dot powders, namely, crystalline semi-conductor materials
09 - Appareils et instruments scientifiques et électriques
Produits et services
Semiconductors; light emitting diodes; quantum dot lights emitting diodes; visual displays, namely, computer display monitors, digital signage display panels; electric luminescent display panels; luminous signs; films, namely, optical films containing semiconductor nanoparticles for use in backlighting units of electronic displays; optical film components in the nature of color converters and wavelength converters for LED driven LCDs; magnetic cores; nanomaterials, namely, nanoscale electronic components in the nature of color converters, wavelength converters, light-emitting diodes, and sensors for use in the manufacture of semiconductors, electronic components and subsystems, light emitting diodes, lasers, computer hardware, telecommunications hardware, data storage hardware, circuit boards, visual displays, photovoltaics, solar cells, chromophores, fluorophores, biosensors and chemical sensors; quantum dots, namely, crystalline semiconductor materials for use in consumer electronics, touch screen devices, and lighting products; nanomaterials electrical conductors used in nanowires, nanoribbons, nanorods, and nanotubes for use in lighting products; quantum dots, namely, nanocrystalline semi-conductor materials; quantum dot dispersions, namely, crystalline semi-conductor materials; quantum dot inks, namely, crystalline semi-conductor materials; quantum dot films, namely, crystalline semi-conductor materials; quantum dot powders, namely, crystalline semi-conductor materials
The nanoparticle composite according to an embodiment of the present invention comprises a nanoparticle (11), ligands (12) that are bonded to the nanoparticle, and functional particles (13) that are bonded to the nanoparticle via the ligands, and has a structure in which the functional particles surround the circumference of the nanoparticle. In the nanoparticle composite according to another embodiment of the present invention, a nanoparticle is contained in an aggregate structure (14) constituted from a plurality of functional particles, and the nanoparticle and the aggregate structure are bonded via ligands.
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 15/00 - Nanotechnologie pour l’interaction, la détection ou l'actionnement, p. ex. points quantiques comme marqueurs en dosages protéiques ou moteurs moléculaires
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
C01F 7/021 - Post-traitement des oxydes ou des hydroxydes
An infrared-absorbing quantum dot according to an embodiment of the present invention includes silver (Ag) and tellurium (Te), and has an absorbance peak in the range of 1,400 nm to 1,800 nm, wherein the peak-to-trough ratio (peak/trough) of the absorbance peak is at least 1.0.
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
B82Y 15/00 - Nanotechnologie pour l’interaction, la détection ou l'actionnement, p. ex. points quantiques comme marqueurs en dosages protéiques ou moteurs moléculaires
27.
NANOPARTICLE CLUSTER, PRINTABLE COMPOSITION, AND METHOD FOR PRODUCING NANOPARTICLES
In one example of a nanoparticle cluster according to an embodiment of the present invention, nanoparticles in the nanoparticle cluster each comprise a metal core and a metal oxide coating that covers at least a portion of the surface of the metal core, wherein the average diameter of the nanoparticles is within a range of 2-200 nm, and the metal oxide coating includes at least one selected from the group consisting of Ba, Ti, Zr, Hf, V, Nb, Ta, W, and Mo.
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
28.
POLYMER-TYPE CONDUCTIVE PASTE, CONDUCTIVE FILM, AND SOLID ELECTROLYTIC CAPACITOR ELEMENT
The present invention provides a polymer-type conductive paste that can be used to obtain a highly reliable conductive layer even in a high-humidity environment. A polymer-type conductive paste according to an embodiment of the present invention contains a conductive metal powder, a binder resin, an organic solvent, and a specific additive. The binder resin is a polyvinyl butyral resin. The specific additive is one or more selected from the group consisting of stearic acid, lauric acid, octadecyl butanedioic acid, benzoic acid, acetamidophenol, aminophenol, catechol, and N,N-bis(2-hydroxyethyl)palm alkylamine. The contained amount of the specific additive is in the range of 0.01-3.0 parts by mass with respect to 100 parts by mass of the conductive metal powder.
5050 in the range of 0.05-1.0μm, inclusive; b is an acrylic resin which has an acid value in the range of 0-10mgKOH/g, inclusive; c is an alcohol-based solvent which is capable of dissolving the acrylic resin therein, has a carbon number of 3 or higher and has a boiling point of 300°C or less; and a step for forming a plate-shaped film by applying a coating of the sintering-type conductive paste onto the substrate surface, and a step for forming a conductor film by drying and sintering the plate-shaped film formed on the substrate are included in said method.
B05D 3/00 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
C09D 133/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un seul radical carboxyle, ou ses sels, anhydrides, esters, amides, imides ou nitrilesCompositions de revêtement à base de dérivés de tels polymères
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
5050 of 0.05 µm to 1.0 µm, an acrylic resin that has an acid value of 0 mgKOH/g to 10 mgKOH/g, and an organic solvent in which the acrylic resin is dissolved, and is also characterized in that: the organic solvent is an alcohol-based solvent having 3 or more carbon atoms and a boiling point of 300°C or less; and the water content in the paste is less than 0.50% by mass.
C09D 133/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un seul radical carboxyle, ou ses sels, anhydrides, esters, amides, imides ou nitrilesCompositions de revêtement à base de dérivés de tels polymères
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a metal powder, a resin binder, and an organic solvent, wherein 20.0% by mass or more of the metal powder is a flaky metal powder, and 70.0% by mass or more of the resin binder is a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
H01B 1/04 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement soit de compositions à base de carbone-silicium, soit de carbone soit de silicium
H01G 9/042 - Électrodes caractérisées par le matériau
H01G 9/048 - Électrodes caractérisées par leur structure
34.
LIGHT EMITTING DEVICES INCLUDING A QUANTUM DOT COLOR CONVERSION MATERIAL AND METHOD OF MAKING THEREOF
A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
35.
SMALL MOLECULE PASSIVATION OF QUANTUM DOTS FOR INCREASED QUANTUM YIELD
This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
36.
QUANTUM DOT MATERIAL AND METHOD FOR PRODUCING QUANTUM DOT MATERIAL
An object of the present invention is to provide a core/shell type quantum dot material capable of increasing the photoluminescence quantum yield and a method of manufacturing the same. The quantum dot material according to one embodiment of the present invention is a quantum dot material comprising a plurality of nanoscopic core-shell structures, each nanoscopic core-shell structure including a nanocrystalline core including phosphorus and indium, a shell disposed on the nanocrystalline core, and a modifier comprising at least one of chlorine and bromine, wherein the content of chlorine and/or bromine is within a range of 2 to 15 mass % of the quantum dot material.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
37.
x alloy nanocrystals with low full width at half-maximum
x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
38.
Nanostructure ink compositions for inkjet printing
The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
B82Y 40/00 - Fabrication ou traitement des nanostructures
C08G 65/26 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir d'éthers cycliques par ouverture d'un hétérocycle à partir d'éthers cycliques et d'autres composés
C09D 11/36 - Encres pour l'impression à jet d'encre à base de solvants non aqueux
C09D 11/38 - Encres pour l'impression à jet d'encre caractérisées par des additifs non macromoléculaires autres que les solvants, les pigments ou les colorants
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
H10K 30/35 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs comprenant des nanostructures inorganiques, p. ex. des nanoparticules de CdSe
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
G03F 7/029 - Composés inorganiquesComposés d'oniumComposés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
41.
Rapid thickening of aminosilicones to promote emulsion stability and adhesion of UV-curable quantum dot enhancement film emulsions
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, an aminosilicone polymer, an organic resin, and a cation. The present invention also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
C09D 183/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a metal powder, a resin binder, and an organic solvent, wherein 20.0% by mass or more of the metal powder is a flaky metal powder, and 70.0% by mass or more of the resin binder is a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
H01B 1/04 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement soit de compositions à base de carbone-silicium, soit de carbone soit de silicium
H01G 9/048 - Électrodes caractérisées par leur structure
H01G 9/042 - Électrodes caractérisées par le matériau
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The light source is configured to emit a primary light having a first peak wavelength. The LCD module includes a first sub-pixel having a phosphor film and a second sub-pixel having a non-phosphor film. The phosphor film is configured to receive a first portion of the primary light and to convert the first portion of the primary light to emit a secondary light having a second peak wavelength that is different from the first peak wavelength. The non-phosphor film is configured to receive a second portion of the primary light and to optically modify the second portion of the primary light to emit an optically modified primary light having a third peak wavelength that is different from the first and second peak wavelengths.
A light emitting device includes a light emitting diode configured to emit blue or ultraviolet radiation incident photons, a color conversion material located over the light emitting diode and configured to absorb the incident photons emitted by the light emitting diode and to generate converted photons having a longer peak wavelength than a peak wavelength of the incident photons, and at least one light extracting feature located between the light emitting diode and the color conversion material.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
46.
LIGHT EMITTING DEVICES INCLUDING A QUANTUM DOT COLOR CONVERSION MATERIAL AND METHOD OF MAKING THEREOF
A light emitting device includes a first optical cavity bounded by cavity walls, a first light emitting diode located in the first optical cavity and configured to emit blue or ultraviolet radiation first incident photons, a first color conversion material located over the first light emitting diode and configured to absorb the first incident photons emitted by the light emitting diode and to generate first converted photons having a longer peak wavelength than a peak wavelength of the first incident photons, and a first color selector located over the first color conversion material and configured to absorb or reflect the first incident photons and to transmit the first converted photons.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
47.
THERMOSETTING CONDUCTIVE RESIN COMPOSITION AND METHOD FOR PRODUCING ELECTRONIC COMPONENT
The present invention provides a thermosetting conductive resin composition which contains a conductive powder and a resin binder, wherein: the conductive powder contains a flake conductive powder; the resin binder contains a thermosetting silicone resin having a hydroxyl group; and 25.0% by mass or more of the resin binder is composed of the thermosetting silicone resin having a hydroxyl group. Consequently, the present invention is able to provide a thermosetting conductive resin composition which is capable of forming a conductive resin layer that has high moisture resistance and excellent electrical conductivity even in cases where a plurality of kinds of resins including a silicone resin are used as the resin binder.
A thermosetting electroconductive resin composition characterized by containing an electroconductive powder including a base metal, a thermosetting silicone resin having a hydroxyl group, and at least one of an amine-based additive and an acid-based additive. According to the present invention, it is possible to provide a thermosetting electroconductive resin composition for forming an electrode of an electronic component, the thermosetting electroconductive resin composition having high viscosity stability, suppressing any decrease in electroconductivity (the electroconductivity is excellent), and being capable of forming an electroconductive resin layer having exceptional moisture resistance, even when the thermosetting electroconductive resin composition contains a thermosetting silicone resin having a hydroxyl group and an electroconductive powder including a base metal such as Cu.
This ink contains metal nanoparticles and a solvent. At least a part of the surface of the metal nanoparticles is coordinated by a hydroxycarboxylic acid ligand, and the hydroxycarboxylic acid ligand includes a carboxyl group and at least one hydroxyl group.
A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
51.
Method for producing copper-selenide nanoparticles, aggregated bodies of copper-selenide nanoparticles, copper-selenide nanoparticles, and film-coated structure
In a method for producing nanoparticles of copper selenide, a flowable copper precursor is formed by combining a copper starting material and a ligand, and a flowable selenium precursor is formed by suspending a selenium starting material in a liquid. Then a flowable copper-selenium mixture including a lower-polarity solvent is formed by combining the flowable copper precursor and the flowable selenium precursor. The flowable copper-selenium mixture is conducted through at least one heating unit, and the nanoparticles of copper selenide are isolated in an oxygen-depleted environment. The isolation includes combining a solution containing the nanoparticles of copper selenide and a deoxygenated, higher-polarity solvent to precipitate the nanoparticles.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
B22F 1/16 - Particules métalliques revêtues d'un non-métal
An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.
This method for producing core/shell-type semiconductor nanoparticles is characterized by comprising a shell forming step for adding raw material zinc carboxylate and a Group VI element precursor to a dispersion of core particles, and reacting the raw material zinc carboxylate with the Group VI element precursor in the presence of the core particles to form shells containing zinc and a Group VI element on the surfaces of the core particles, wherein: the proportion of C8-C10 carboxylic acids in all carboxylic acids, which form the raw material zinc carboxylate, is at least 80.0 mass%; and the average branching degree of all carboxylic acids, which form the raw material zinc carboxylate, is 1.1-2.9. According to the present invention, it is possible to provide a simple method which is for producing semiconductor nanoparticles and by which semiconductor nanoparticles having a core/shell-type structure and excellent optical characteristics can be produced when semiconductor nanoparticles having a core/shell-type structure are produced using at least two shell precursors.
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising donor-acceptor ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
55.
SEMICONDUCTOR NANOPARTICLE AGGREGATE, SEMICONDUCTOR NANOPARTICLE AGGREGATE DISPERSION LIQUID, SEMICONDUCTOR NANOPARTICLE AGGREGATE COMPOSITION, AND SEMICONDUCTOR NANOPARTICLE AGGREGATE CURED FILM
A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
58.
Display devices with different light sources in pixel structures
Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a multi-layer stack and a first substrate configured to support the first light source. The multi-layer stack includes an organic phosphor film or a quantum dot (QD) based phosphor film configured to emit a first light having a first peak wavelength. The first substrate includes a first control circuitry configured to independently control the first light source. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a microLED or a miniLED configured to emit a second light having a second peak wavelength that is different from the first peak wavelength. The second peak wavelength can be in the blue wavelength region of the visible spectrum. The second substrate includes a second control circuitry configured to independently control the second light source.
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 50/13 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] spécialement adaptées à l'émission de lumière multicolore, p. ex. à l'émission de lumière blanche comprenant des couches EL empilées dans une unité EL
H10K 50/828 - Cathodes transparentes, p. ex. comprenant des couches métalliques minces
H10K 50/852 - Dispositifs pour extraire la lumière des dispositifs comprenant une structure de cavité résonante, p. ex. une paire de réflecteurs de Bragg
H10K 102/00 - Détails de structure relatifs aux dispositifs organiques couverts par la présente sous-classe
Embodiments of a flexible electroluminescent (EL) device are described. An EL device includes a device stack and a flexible substrate configured to support the device stack. The device stack can include a anode and a cathode, a quantum dot (QD) film positioned between the anode and the cathode and configured to produce light having a first peak wavelength. The device stack further includes a patterned insulating layer disposed on the anode and configured to form electrically active regions in the device stack and to control emission of the light from the EL device through the electrically active regions. The EL device further includes an encapsulation layer disposed on the cathode.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H01L 51/52 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED) - Détails des dispositifs
H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
5050) of this insulated covered soft magnetic powder as determined by laser diffraction/scattering particle size distribution measurement is from 0.01 μm to 2.0 μm; the respective content ratios of oxygen, carbon and nitrogen to the entire insulated covered soft magnetic powder are from 0.1 wt% to 2.0 wt% (oxygen), from 0 wt% to 0.2 wt% (carbon), and from 0 wt% to 0.2 wt% (nitrogen); and the content ratio of the sum of oxygen, carbon and nitrogen to the entire insulated covered soft magnetic powder is from 0.1 wt% to 2.0 wt%.
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
H01F 1/33 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux mélanges de particules métalliques ou non métalliquesAimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux particules métalliques ayant un revêtement d'oxyde
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/16 - Particules métalliques revêtues d'un non-métal
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
B82Y 40/00 - Fabrication ou traitement des nanostructures
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/54 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du zinc ou du cadmium
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/54 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du zinc ou du cadmium
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
Provided is a semiconductor nanoparticle complex dispersion liquid in which semiconductor nanoparticles are dispersed in a polar dispersion medium at a high mass fraction, and in which high fluorescence quantum efficiency (QY) is maintained. A semiconductor nanoparticle complex dispersion liquid according to an embodiment includes a semiconductor nanoparticle complex dispersed in an organic dispersion medium, wherein: the semiconductor nanoparticle complex is composed of two or more ligands including an aliphatic thiol ligand and a polar ligand, and a semiconductor nanoparticle with the ligands coordinated to the surface thereof; the ligands are composed of an organic group and a coordinating group; the organic group of the polar ligand includes a hydrophilic functional group; and an SP value of the organic dispersion medium is 8.5 or more.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
HS—X—(COOH)n (1)
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
HS—X—(COOH)n (1)
(In general formula (1), X is a (n+1)-valent hydrocarbon group, and n is a natural number of 1 to 3.) The present disclosure provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a dispersion medium having polarity while a high fluorescence quantum yield (QY) of the semiconductor nanoparticle is retained.
2. The mercapto fatty acid ester has an SP value of 9.20 or more. The mercapto fatty acid ester has a molecular weight of 700 or less, and the average SP value of the entire ligand is 9.10 to 11.00. The present invention provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a polar dispersion medium while keeping high fluorescence quantum yield.
C09K 11/06 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances organiques luminescentes
C08G 65/32 - Polymères modifiés par post-traitement chimique
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
66.
METHOD FOR STABILIZATION OF ZINC OXIDE NANOPARTICLES
This invention pertains to the field of nanotechnology. The invention relates to nanoparticles comprising zinc oxide treated with a silane compound. The nanoparticles comprising zinc oxide functionalized with silane compounds show improved stability. And, quantum dot light emitting diodes prepared using nanoparticles comprising zinc oxide functionalized with silane compounds in the electron transport layer show improved per-formance. The invention also relates to methods of producing nanoparticles comprising zinc oxide functionalized with silane compounds.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H01L 51/42 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less.
Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less.
General formula: HS—R1—COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.
C01G 15/00 - Composés du gallium, de l'indium ou du thallium
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
68.
Blue-emitting nanocrystals with cubic shape and fluoride passivation
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
B82Y 40/00 - Fabrication ou traitement des nanostructures
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a first portion of a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and is configured to prevent total internal reflection of a second portion of the secondary light. The light extraction layer has patterned features with one or more dimension in nanometer scale.
Embodiments of a flexible electroluminescent (FEE) device are described. An FEE device includes a device stack with a quantum dot (QD) film configured to generate a first light having a first peak wavelength and a flexible substrate configured to support the device stack and emit a first portion of the first light. The FEE device further includes an encapsulation layer disposed on the device stack and an outcoupling layer disposed on the flexible substrate. The encapsulation layer can be configured to provide mechanical and environmental protection to the FEE device from moisture or oxygen. The outcoupling layer can be configured to prevent total internal reflection of a second portion of the first light within the flexible substrate and extract the second portion from the flexible substrate. The outcoupling layer can be further configured to eliminate air gaps at an interface between the outcoupling layer and a surface to be illuminated by the extracted second portion in response to the FEE device being substantially conformally placed on the surface.
H10K 50/858 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens de réfraction, p. ex. des lentilles
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
Provided are core/shell type semiconductor nanoparticles including: a core including In and P; and a shell having one or more layers. The semiconductor nanoparticles further include at least Zn, Se, and at least one halogen. In the semiconductor nanoparticles, molar ratios of P, Zn, Se, and halogen each relative to In in terms of atoms are P: 0.20˜0.95, Zn: 11.00˜50.00, Se: 7.00˜25.00, and halogen: 0.80˜15.00. According to the present invention, core/shell type semiconductor nanoparticles that include the core including In and P and the shell including Zn and Se as main components, and have high quantum yield, a small full width at half maximum, and small Stokes shift can be provided.
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
B32B 15/04 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 15/09 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des polyesters
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
2 (MPa) of a solvent at the heating temperature T. According to the present invention, a method for producing particles having a narrow particle size distribution with high production efficiency can be provided.
B01J 2/00 - Procédés ou dispositifs pour la granulation de substances, en généralTraitement de matériaux particulaires leur permettant de s'écouler librement, en général, p. ex. en les rendant hydrophobes
B01J 19/00 - Procédés chimiques, physiques ou physico-chimiques en généralAppareils appropriés
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 9/16 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique
C22C 1/04 - Fabrication des alliages non ferreux par métallurgie des poudres
Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, or more one metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.
C01G 15/00 - Composés du gallium, de l'indium ou du thallium
G02B 1/04 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de substances organiques, p. ex. plastiques
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
76.
Electroluminescent devices with hybrid organic-inorganic transport layers
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.
H10K 50/11 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL]
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 85/60 - Composés organiques à faible poids moléculaire
H10K 101/40 - Interrelation des paramètres entre plusieurs couches ou sous-couches actives constitutives, p. ex. valeurs HOMO dans des couches adjacentes
H10K 102/00 - Détails de structure relatifs aux dispositifs organiques couverts par la présente sous-classe
77.
Electroluminescent devices with organic transport layers
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, a first transport layer disposed on the first electrode, an emission layer having luminescent nanostructures disposed on the first transport layer, a second transport layer having an organic layer, and a second electrode disposed on the second transport layer. A first portion of the organic layer is disposed on the emission layer and a second portion of the organic layer is disposed on the first transport layer.
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polythiol ligands with pendant moieties. The polythiol ligand with pendant moieties increase the solubility of the nanostructures in solvents and resins. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
B82Y 40/00 - Fabrication ou traitement des nanostructures
C07C 319/18 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures par addition de thiols à des composés non saturés
C07C 323/22 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'oxygène, liés par des liaisons doubles, liés au même squelette carboné
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/74 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'arsenic, de l'antimoine ou du bismuth
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 1/10 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques
B22F 1/102 - Poudres métalliques revêtues de matériaux organiques
B22F 1/103 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant un liant organique comprenant un mélange de, ou obtenu par réaction de, plusieurs composants autres que les solvants ou les agents lubrifiants
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 μm and a second silver powder having a D50 of 0.80 to 2.00 μm, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.
B22F 1/107 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant des matériaux organiques comportant des solvants, p. ex. pour la coulée en moule poreux ou absorbant
C09D 11/033 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le solvant
C09D 11/037 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le pigment
C09D 11/14 - Encres d’imprimerie à base d'hydrates de carbone
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
81.
METHOD OF IMPROVING PERFORMANCE OF DEVICES WITH QDS COMPRISING THIN METAL OXIDE COATINGS
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core/shell and a thin metal oxide on the outer shell of the nanostructure. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, in which a value CBND/SBET is 2.0 to 3.4 where SBET (m2/g) represents a specific surface area of the silver powder, and CBND (% by mass) represents a content percentage of the binder resin based on the silver powder, a copper content of the silver powder is 10 to 5000 ppm by mass, and the silver paste has a dry film density of 7.50 g/cm3 or more. The present invention can provide a silver paste containing a powder in a high concentration and excellent in printability, and accordingly provide a silver conductor film that has a high filling factor and a high film density, exhibits high electrical conductivity, and is excellent in migration resistance.
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
B32B 5/16 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches est formée de particules, p. ex. de copeaux, de fibres hachées, de poudre
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
222 per 100.0 parts by mass of the electroconductive powder (A) mainly comprising Ni. Through the present invention, it is possible to provide a Ni paste for an internal electrode, whereby high-temperature load service life can be improved without reducing the continuity of an electrode film.
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
B32B 5/16 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches est formée de particules, p. ex. de copeaux, de fibres hachées, de poudre
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
A method for manufacturing an electronic component, characterized by having: a preparation step for preparing an electrode-forming body for an electronic component; and an electrode-forming step for forming an electrode on the outer surface of the electrode-forming body for an electronic component, an electrically conductive resin layer being formed on the electrode-forming body for an electronic component in the electrode-forming step, using an electrically conductive resin composition containing silicone resin. In the present invention, it is possible to provide the method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide the method for manufacturing an electronic component that, in addition to having high moisture resistance, has few restrictions in terms of design and manufacturing, thus having high manufacturing efficiency.
H01G 13/00 - Appareils spécialement adaptés à la fabrication de condensateursProcédés spécialement adaptés à la fabrication de condensateurs non prévus dans les groupes
This manufacturing method for an electronic component is characterized by the following: having a preparation step for preparing an electronic component-use electrode formation body, and an electrode formation step for forming an electrode on an outer surface of the electronic component-use electrode formation body; and in the electrode formation step, an electroconductive resin composition is used to form an electroconductive resin layer on the electronic component-use electrode formation body, the electroconductive resin composition containing a metal powder, a resin binder, and an organic solvent, 20.0 mass% or greater of the metal powder being a flaky metal powder, and 70.0 mass% or greater of the resin binder being a silicone resin. According to the present invention, it is possible to provide a manufacturing method for an electronic component that, in addition to having a high durability to moisture, has a high manufacturing efficiency with few design- and manufacturing-based restrictions.
C08L 83/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
C08L 63/00 - Compositions contenant des résines époxyCompositions contenant des dérivés des résines époxy
H01G 13/00 - Appareils spécialement adaptés à la fabrication de condensateursProcédés spécialement adaptés à la fabrication de condensateurs non prévus dans les groupes
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
This method for producing an inorganic fine powder is a method in which a cumulative 50% particle diameter D50 on a volume basis is within a range of 0.01-5.0 ?m, the method being characterized by comprising: a sorted powder producing step for obtaining a sorted powder which is sorted by dispersing, in a gas phase, a carboxylic acid-adsorbed inorganic raw material powder, in which a carboxylic acid is adsorbed onto an inorganic raw material powder having D50 of 10 ?m or less; and a dry-sorting step for dry-sorting the sorted powder. The present invention can provide a method for producing an inorganic fine powder, with which an inorganic fine powder, having an extremely small number of coarse particles and a cumulative 50% particle diameter D50 on a volume basis within a range of 0.01-5.0 ?m, can be produced with high productivity.
25255 per 100.0 parts by mass of the conductive powder (A) that is mainly composed of Ni, (D3) a stabilized zirconia (SZ) in an amount within the range of from 0.05 × 10-2to 2.20 × 10-2233 per 100.0 parts by mass of the conductive powder (A) that is mainly composed of Ni. The present invention is able to provide an Ni paste for internal electrodes, said Ni paste being capable of improving the high temperature load life without lowering the continuity of an electrode film.
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
C04B 35/468 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates de métaux alcalino-terreux à base de titanates de baryum
This carboxylic acid-containing nickel powder contains a plurality of nickel particles, and comprises carboxylic acid on the surface of each of the nickel particles. Through TG-MS, when the temperature is raised from 38°C to 600°C at a heating rate of 20°C/min under an inert atmosphere, a peak is detected in a mass chromatogram of the carboxylic acid molecular ions, and when the boiling point of the carboxylic acid is represented by Tbp[°C], the peak top of the peak falls within the range of between (Tbp + 100) °C and 600°C inclusive. The carboxylic acid content per 1 m2 surface area of the nickel particles constituting the carboxylic acid-containing nickel powder is between 155 ?g and 450 ?g inclusive. The present invention allows a carboxylic acid-containing nickel powder to be provided, having high dispersibility in the gas phase, and having high dispersibility in a paste when mixed with an organic solvent, or the like, and used for forming a paste.
2, based on the total number of moles in terms of the above oxides. According to the present invention, it is possible to provide a lead-free conductive paste having excellent resistance to dissolution in solder and acid resistance as well as being capable of forming fired films having excellent adherence and adhesion to a substrate.
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
C03C 8/04 - Compositions en verre fritté, c.-à-d. broyées ou sous forme de poudre contenant du zinc
C03C 8/18 - Mélanges de frittes vitreuses contenant des additifs, p. ex. des agents opacifiants, des colorants, des agents de broyage contenant des métaux libres
B03B 1/04 - Traitement pour faciliter la séparation, en altérant les propriétés physiques du matériau à traiter par additifs
B07B 7/08 - Séparation sélective des matériaux solides portés par des courants de gaz, ou dispersés dans ceux-ci utilisant la force centrifuge
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/02 - Traitement particulier des poudres métalliques, p.ex. en vue de faciliter leur mise en œuvre, d'améliorer leurs propriétés; Poudres métalliques en soi, p.ex. mélanges de particules de compositions différentes comportant un enrobage des particules
C01B 33/18 - Préparation de silice finement divisée ni sous forme de sol ni sous forme de gelPost-traitement de cette silice
94.
CARBOXYLIC ACID-CONTAINING NICKEL POWDER AND CARBOXYLIC ACID-CONTAINING NICKEL POWDER PRODUCTION METHOD
bpbpbp + 100) °C and 600°C inclusive. The carboxylic acid content per 1 m2 surface area of the nickel particles constituting the carboxylic acid-containing nickel powder is between 155 μg and 450 μg inclusive. The present invention allows a carboxylic acid-containing nickel powder to be provided, having high dispersibility in the gas phase, and having high dispersibility in a paste when mixed with an organic solvent, or the like, and used for forming a paste.
B03B 1/04 - Traitement pour faciliter la séparation, en altérant les propriétés physiques du matériau à traiter par additifs
B07B 7/08 - Séparation sélective des matériaux solides portés par des courants de gaz, ou dispersés dans ceux-ci utilisant la force centrifuge
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/02 - Traitement particulier des poudres métalliques, p.ex. en vue de faciliter leur mise en œuvre, d'améliorer leurs propriétés; Poudres métalliques en soi, p.ex. mélanges de particules de compositions différentes comportant un enrobage des particules
C01B 33/18 - Préparation de silice finement divisée ni sous forme de sol ni sous forme de gelPost-traitement de cette silice
95.
Blue-emitting nanocrystals with cubic shape and group IV metal fluoride passivation
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
A method for producing core/shell semiconductor nanoparticles, said method being characterized by having a shell formation step wherein a solution of a VI group element precursor is added to a dispersion of core particles, while adding a solution of a carboxylic acid zinc salt having a branched chain to the dispersion, and the carboxylic acid zinc salt having a branched chain and the VI group element precursor are reacted with each other in the presence of the core particles, thereby forming a shell that contains zinc and a VI group element on the surface of each of the core particles. The present invention is able to provide an easy method for producing semiconductor nanoparticles, said method being capable of producing semiconductor nanoparticles having a core/shell structure and excellent optical characteristics in cases where semiconductor nanoparticles having a core/shell structure are produced using two or more kinds of shell precursors.
The ink composition according to an embodiment of the present invention contains a volatile solvent, and a plurality of semiconductor nanoparticles dispersed in the volatile solvent and being coordinated to a plurality of organic ligands. The mass ratio of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. The product according to an embodiment of the present invention includes: a solid substrate; and a dry residue of an ink composition disposed on the solid substrate and containing a plurality of semiconductor nanoparticles disposed without having a polymer matrix interposed therebetween. In addition, the semiconductor nanoparticles are coordinated to a plurality of organic ligands.
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09D 11/033 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le solvant
C09D 11/037 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le pigment
98.
SEMICONDUCTOR-NANOPARTICLE AGGREGATE, SEMICONDUCTOR-NANOPARTICLE-AGGREGATE DISPERSION, SEMICONDUCTOR-NANOPARTICLE-AGGREGATE COMPOSITION, AND SEMICONDUCTOR-NANOPARTICLE-AGGREGATE CURED FILM
Provided is a semiconductor-nanoparticle aggregate that is an aggregation of core/shell-type semiconductor nanoparticles, each of which has a core containing In and P and a shell having one or more layers, the semiconductor-nanoparticle aggregate being characterized in that: the peak wavelength (λ1MAXMAX) of the emission spectrum (λ1) of the semiconductor-nanoparticle aggregate is in the range 515-535 nm; the half width (FWHM1) is equal to or less than 43 nm; and, for each particle of the semiconductor nanoparticles, (1) the average value of the half width (FWHM2) of the emission spectrum (λ2) is equal to or greater than 15 nm, (2) the standard deviation (SD1) of the peak wavelength (λ2MAXMAX) of the emission spectrum (λ2) is equal to or less than 12 nm, and (3) the standard deviation (SD2) of the half width (FWHM2) of the emission spectrum (λ2) is equal to or greater than 2 nm. According to the present invention, it is possible to provide semiconductor nanoparticles: that are core/shell-type semiconductor nanoparticles, each of which consists of a core containing In and P and a shell having one or more layers; and that have a small half width and a high quantum efficiency.
C01B 25/14 - Composés de phosphore et de soufre, sélénium ou tellure
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
A semiconductor nanoparticle assembly that is an assembly of core/shell type semiconductor nanoparticles, each of which has a core that contains In and P, and one or more shell layers. This semiconductor nanoparticle assembly is characterized in that: the emission spectrum (λ1) of the semiconductor nanoparticle assembly has a peak wavelength (λ1MAXMAX) between 605 nm and 655 nm, while having a half-value width (FWHM1) of 43 nm or less; and with respect to each one of the semiconductor nanoparticles, (1) the average of the half-value width (FWHM2) of the emission spectrum (λ2) is 28 nm or less, (2) the standard deviation (SD1) of the peak wavelength (λ2MAXMAX) of the emission spectrum (λ2) is from 10 nm to 30 nm, and (3) the standard deviation (SD2) of the half-value width (FWHM2)of the emission spectrum (λ2) is 12 nm or less. According to the invention, it is possible to provide semiconductor nanoparticles which are core/shell type semiconductor nanoparticles, each having a core that contains In and P, and one or more shell layers, and which have a small half-value width and a high quantum efficiency.
C01B 25/10 - Halogénures ou oxyhalogénures de phosphore
C01B 25/14 - Composés de phosphore et de soufre, sélénium ou tellure
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
A dielectric ceramic composition including a first component and a second component. The first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %. The second component includes (by mass) at least (a) an oxide of Mn of 0.005% to 3.500% and (b) one or both of an oxide of Cu of 0.080% to 20.000% and an oxide of Ru of 0.300% to 45.000%.
C04B 35/495 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de vanadium, de niobium, de tantale, de molybdène ou de tungstène ou de leurs solutions solides avec d'autres oxydes, p. ex. vanadates, niobates, tantalates, molybdates ou tungstates
