Produits et services

Circuits for heavy current; driving integrated circuit (IC) and power management IC (PMIC) for display; semi-conductors; semiconductor component; semiconductor power elements; analogue circuits; circuits, namely, electric and electronic circuits; electronic semi-conductors; silicon chips, namely, electronic components; electronic integrated circuits; electronic chips; electronic circuits; integrated electronic circuits; integrated circuits; chips, namely, integrated circuits

Abrégé

The present invention is an apparatus for driving light-emitting diodes. According to one embodiment, the apparatus for driving light-emitting diodes comprises: a voltage distribution unit for dividing a first reference voltage into a plurality of voltages; a reference voltage selection unit for receiving the plurality of voltages and a dimming signal from the voltage distribution unit, and selecting one voltage from among the plurality of voltages based on the pulse number contained in the dimming signal and outputting the selected voltage as a second reference voltage; and a comparator for receiving the second reference voltage and a sawtooth wave signal through an input terminal thereof, and generating a pulse width modulation signal having a duty ratio corresponding to the amplitude of the second reference voltage and outputting the generated pulse width modulation signal as a drive signal for the plurality of light-emitting diodes.

Classes IPC  ?

• H05B 37/02 - Commande

Abrégé

The present invention relates to a circuit for preventing the malfunction of a reverse current detector in a switching regulator, comprising: a reverse current detection signal transmission unit for outputting only one signal in one period for a reverse current detection signal detected by the reverse current detector; a reverse current detection signal verification unit for confirming whether the output of the reverse current detection signal transmission unit is correct information; and a reverse current detection signal generation unit for generating a reverse current detection signal by receiving a signal from the reverse current detection signal verification unit.

Classes IPC  ?

• G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
• G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance

Abrégé

The present invention relates to a high-voltage integrated circuit, including: a high-voltage enable signal generating unit for generating a high-voltage enable signal (VENHB) by dividing an input voltage (VIN) via a resistor (R2), which controls a bias current, and a voltage-dropping unit, when an external enable signal (Ext EN) turns on an n-type MOS transistor (NM1); and a low-voltage enable signal generating unit for generating a low-voltage enable signal (VENL) by driving a buffer unit using a voltage limited by a Zener diode via a resistor (R5), which controls a bias current, and a first current mirror, when the external enable signal (Ext EN) turns on an n-type MOS transistor (NM2).

Classes IPC  ?

• G05F 3/02 - Régulation de la tension ou du courant
• G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ

Abrégé

The present invention relates to a semiconductor waveform generator, comprising: a reference signal generation unit for generating a reference voltage (VREF), and generating an upper threshold value (VFB) and a lower threshold value (VTHL) of a sawtooth wave by dividing the reference voltage (VREF); a charge / discharge control unit for generating a reference current by receiving the reference voltage (VREF) which is generated by the reference signal generation unit and inputted through a bias, and for controlling the charging / discharging of a sawtooth wave generation capacitor to generate the sawtooth wave, based on charge / discharge enabling signals (ENP) (ENN), which are feed backed by copying the reference voltage using a current mirror; and a sawtooth wave amplitude control unit for comparing a sawtooth output signal from the charge / discharge control unit with each of the upper threshold value (VFB) and the lower threshold value (VTHL) from the reference signal generation unit, controlling a resetting (R) and a setting (S) of a latch, thereby generating and outputting via the latch a square wave having an amplitude which is controlled according to the controlling of the upper and lower thresholds of the sawtooth wave, and feeding back the square wave as the charge / discharge enabling signals of the charge / discharge control unit.

Classes IPC  ?

• H03K 4/12 - Génération d'impulsions ayant comme caractéristique essentielle une pente définie ou des parties en gradins à forme triangulaire en dents de scie utilisant comme éléments actifs uniquement des tubes à décharge dans laquelle la tension en dents de scie est produite à travers un condensateur
• G05F 1/10 - Régulation de la tension ou de l'intensité

Abrégé

The present invention relates to a semiconductor waveform generator, and more particularly, to a sawtooth wave generator which can be applied to a DC-DC converter, a pulse width modulation circuit, or the like that is being used as a semiconductor integrated circuit. The semiconductor waveform generator comprises: a regulator unit which generates a reference voltage, and divides the reference voltage to provide an upper threshold value (VTH) and a lower threshold value (VTL) of a sawtooth wave; a current mirror unit which operates as a current mirror by means of a first MOS transistor (M1) and a second MOS transistor (M2); a sawtooth wave generating unit which has a fifth MOS transistor (M5) and a fourth MOS transistor (M4) which are a PMOS transistor and an NMOS transistor, respectively, connected in series to a drain terminal of the second MOS transistor (M2) of the current mirror unit, wherein said sawtooth wave generating unit generates a sawtooth wave by charging/discharging a condenser (C2) at the connection point between the fifth MOS transistor (M5) and the fourth MOS transistor (M4); and a sawtooth wave amplitude control unit which compares the sawtooth wave signals output by the sawtooth wave generating unit with the upper threshold value (VTH) and the lower threshold value (VTL) of the regulator unit, respectively, generates a square wave signal in which an amplitude is controlled by the upper/lower threshold control of the sawtooth wave, and applies the square wave signal as a blank signal to the gates of the fifth MOS transistor (M5) and to the fifth MOS transistor (M4) of the sawtooth wave generating unit.

Classes IPC  ?

• H03K 4/08 - Génération d'impulsions ayant comme caractéristique essentielle une pente définie ou des parties en gradins à forme triangulaire en dents de scie

Abrégé

An ultra low dropout voltage regulator, which separately supplies operating power for internal circuits, but controls the operating power to perform the operation of a voltage regulator chip, so that an ultra low dropout voltage regulator can be designed to reduce standby power consumption and to minimize the size of the chip, can be designed to more rapidly respond to the overload or overvoltage of the chip and to stably and precisely shut down the chip in the event of the overload or overvoltage, and can be designed to realize ultra low dropout characteristics even at a low output voltage.

Classes IPC  ?

• G05F 1/569 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance à des fins de protection
• G05F 1/573 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance à des fins de protection avec détecteur de surintensité

Abrégé

A voltage regulator and a method of manufacturing the voltage regulator, which can provide a desired output voltage of the voltage regulator using a plurality of metal wires, arranged in regular patterns, and conductive metal wiring patterns, configured to activate the metal wires by selectively connecting them to each other when a voltage regulator having various output voltage patterns is produced through a single chip, thus reducing the costs of manufacturing the voltage regulator by simplifying the manufacturing process while reducing the size of the chip of the voltage regulator.

Classes IPC  ?

• G05F 1/40 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type alternatif utilisant des tubes à décharge ou des dispositifs à semi-conducteurs comme dispositifs de commande finale
• G05F 1/44 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type alternatif utilisant des tubes à décharge ou des dispositifs à semi-conducteurs comme dispositifs de commande finale à dispositifs à semi-conducteurs uniquement