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Résultats pour
 brevets
1.
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METHOD FOR GROWING LARGE DIAMETER FLOAT ZONE SILICON MONOCRYSTAL
| Numéro d'application |
CN2014088600 |
| Numéro de publication |
2016/049947 |
| Statut |
Délivré - en vigueur |
| Date de dépôt |
2014-10-15 |
| Date de publication |
2016-04-07 |
| Propriétaire |
TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY CO., LTD (Chine)
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| Inventeur(s) |
- Shen, Haoping
- Wang, Yanjun
- Zhang, Xuenan
- Jin, Lihui
- Gao, Shuliang
- Liu, Jia
- Wang, Zunyi
- Liu, Zheng
- Zhao, Hongbo
- Liu, Kun
- Hao, Dawei
- Wu, Feng
- Chu, Zhanbin
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Abrégé
The present invention provides a method for growing a large diameter float zone silicon monocrystal. The method comprises: furnace charging, evacuating, inflating, preheating, material melting, seeding, narrow neck growing, shoulder expanding, maintaining, equal diameter growing, ending, cooling, and furnace removal and cleaning. By means of a method for controlling the generator output power, the polycrystal material descending speed and other parameters, the problem of easy stacking caused by difficulty in melting of the large diameter polycrystal material, and the problem of a low crystal forming rate caused by poor process repeatability, dislocation in the shoulder expanding process and the like under the conditions of the existing process and method are solved, the crystal forming rate and the qualification rate of the large diameter float zone silicon monocrystal are increased, the labor intensity is reduced, and the repeatability and the reproducibility are good.
Classes IPC ?
- C30B 13/28 - Commande ou régulation
- C30B 13/10 - Croissance des monocristaux par fusion de zoneAffinage par fusion de zone en introduisant dans la zone fondue le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage
- C30B 29/06 - Silicium
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2.
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METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCHRALSKI ZONE MELTING METHOD
| Numéro d'application |
CN2013086395 |
| Numéro de publication |
2014/127646 |
| Statut |
Délivré - en vigueur |
| Date de dépôt |
2013-11-01 |
| Date de publication |
2014-08-28 |
| Propriétaire |
TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY CO., LTD (Chine)
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| Inventeur(s) |
- Wang, Yanjun
- Zhang, Xuenan
- Shen, Haoping
- Qiao, Liu
- Liu, Jia
- Wang, Zunyi
- Liu, Zheng
- Sun, Jian
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Abrégé
The present invention provides a method for preparing a solar grade silicon single crystal using a Czochralski zone melting method, comprising: alternatively rotating a downward rotation motor in a forward direction and a reverse direction in an isodiametric growth process of a zone melting stage, under the control of an electrical control system of a zone melting silicon single crystal furnace, wherein the downward rotation motor drives the silicon single crystals to rotate at a pre-set angle in the forward and reverse directions. The present invention enhances the radial uniformity of a solar grade silicon single crystal, solves the problem of black cores in the solar grade silicon single crystals and can improve the conversion efficiency of a solar cell prepared with the solar grade silicon single crystal.
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