A light emitting device, including a plurality of emitter subassemblies and a lens array, each emitter subassembly including a plate-shaped light emitter having two sides and configured to emit light from an edge, and at least one plate-shaped submount attached to at least one side of the plate-shaped light emitter. Each of the plurality of emitter subassemblies are disposed parallel to one another and sintered to one another in such a manner as to form a light emitting diode stack. A predefined pitch pattern defines distances between adjacent emitter subassemblies. The lens array is mounted on the light emitting diode stack and includes a plurality of lenses combined as a single unitary body. Distances between the lenses correspond to the distances defined by the predefined pitch pattern such that each of the plurality of lenses is aligned with a corresponding one of the plate-shaped light emitters.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
F21Y 115/00 - SCHÉMA D'INDEXATION ASSOCIÉ AUX SOUS-CLASSES , , ET , RELATIF À LA FORME OU AU TYPE DES SOURCES LUMINEUSES OU À LA COULEUR DE LA LUMIERE EMISE Éléments générateurs de lumière de sources lumineuses à semi-conducteurs
G02B 3/06 - Lentilles simples ou composées à surfaces non sphériques à surfaces cylindriques ou en forme de tore
A light emitting device, including a plurality of emitter subassemblies and a lens array, each emitter subassembly including a plate-shaped light emitter having two sides and configured to emit light from an edge, and at least one plate-shaped submount attached to at least one side of the plate-shaped light emitter. Each of the plurality of emitter subassemblies are disposed parallel to one another and sintered to one another in such a manner as to form a light emitting diode stack. A predefined pitch pattern defines distances between adjacent emitter subassemblies. The lens array is mounted on the light emitting diode stack and includes a plurality of lenses combined as a single unitary body. Distances between the lenses correspond to the distances defined by the predefined pitch pattern such that each of the plurality of lenses is aligned with a corresponding one of the plate-shaped light emitters.
A device for beam shaping of a laser beam includes a prism, a polarization rotator, and a thin-film polarizer. The prism is configured to split an incident laser beam into a first beam half and a second beam half. The first beam half is input coupled into the prism. The first beam half enters the prism at a first incidence side arranged at the Brewster angle vis-à-vis the incident laser beam. The first beam half input coupled into the prism is output coupled from the prism at an exit side of the prism at the Brewster angle. The thin-film polarizer is traversed by the first beam half output coupled from the prism. The polarization rotator rotates a polarization of the second beam half. The second beam half is reflected by the thin-film polarizer. The thin-film polarizer superimposes the first beam half and the second beam half.
The present invention relates to a device (100) for shaping an incident laser beam (1), comprising a prism (2), a polarization rotator (3) and a thin-film polarizer (4), wherein: the prism (2) is arranged such that it splits the incident laser beam (1) into a first beam half (12) and a second beam half (14); at least the first beam half (12) is coupled into the prism (2); the first beam half (12) enters the prism (2) at a first incidence side (20); the prism (2) is designed such that the first incidence side (20) is arranged at Brewster's angle (B) with respect to the incident laser beam (1); the prism (2) is designed such that the first beam half (12) coupled into the prism (2) is coupled out of the prism (2) again at an exit side (24) of the prism (2); the first beam half (12) is coupled out of the prism (2) at Brewster's angle; the thin-film polarizer (4) is arranged such that it is traversed by the first beam half (12) coupled out of the prism (2); the polarization rotator (3) is arranged such that it is traversed by the second beam half (14) and rotates the polarization of the second beam half (14); and the second beam half (14) is guided such that it is reflected by the thin-film polarizer (4) and the thin-film polarizer (4) superimposes the first beam half (12) and the second beam half (14).
Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.
Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.
A method for manufacturing a cooling element (1) for an electrical or electronic component, in particular a semiconductor element, the manufactured cooling element (1) having a cooling fluid channel system through which a cooling fluid can be passed during operation, comprising
providing at least a first metal layer (11)
realizing at least one recess (21, 22) in the at least one first metal layer (11), and
forming at least a partial section of the cooling fluid channel system by means of the at least one recess (21, 22),
wherein at least a first part (21) of the at least one recess (21, 22) in the at least first metal layer (11) is realized by erosion, in particular spark erosion.
H01S 5/024 - Dispositions pour la gestion thermique
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
8.
Diode laser assembly and method for assembling a diode laser assembly
A diode laser arrangement includes a diode laser device, first and second cooling elements and at least one spacing device. The laser device and spacing device are mutually spaced apart between the first and second cooling elements. The laser device and the spacing device are disposed on respective first and second outer surfaces of respective cooling elements. The first and second cooling elements cool the laser device. The laser device has first and second diode main surfaces. The first diode main surface is on the first outer surface in a first front region and/or the second diode main surface is on the second outer surface in a second front region. The spacing device places the first outer surface in the first front region parallel to the first diode main surface, and/or the second outer surface in the second front region parallel to the second diode main surface.
A diode laser arrangement for the cooling of and supply of electrical current to diode laser devices, having at least two stacks, each having a diode laser device which is configured to emit a laser beam, an upper cooling device, and a lower cooling device. The diode laser device is arranged on the upper cooling device and on the lower cooling device such that the diode laser device is arranged between the upper cooling device and the lower cooling device. The upper and lower cooling devices are in each case electrically connected to the diode laser device arranged therebetween. The upper cooling device and/or the lower cooling device of a stack are in each case formed as a microchannel cooler. The upper cooling device and/or the lower cooling device of a stack in each case have substantially no electrical insulation with respect to the diode laser device arranged therebetween.
A diode laser arrangement has a diode laser device and at least one cooling device. The at least one cooling device is arranged on the diode laser device. The at least one cooling device is configured to cool the diode laser device. The at least one cooling device has a contact body and at least one heat conducting insert. The contact body contains a first material or consisting of a first material, and the at least one heat conducting insert has a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body is arranged on the diode laser device. The at least one heat conducting insert is embedded in the contact body.
A diode laser arrangement includes at least one emitter, first and second cooling devices and a first connecting layer. The emitter is configured to emit a laser beam and is disposed between the first and second cooling devices. The first and second cooling devices are each configured for cooling the emitter. The emitter is connected to the first cooling device by the first connecting layer, and the first connecting layer has a connecting material or is composed of a connecting material selected from a group including gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, an aluminum alloy, indium, an indium alloy, lead and a lead alloy.
A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.
A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.
H01S 5/024 - Dispositions pour la gestion thermique
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
A laser diode heat sink including: a main body portion formed of metal; an electrically insulating layer on a principal surface of the main body portion, in which an interface between the main body portion and the electrically insulating layer includes multiple interlocking structures; and a metal mounting layer for mounting a laser diode on the electrically insulating layer.
A laser diode device includes: a heat sink including a main body portion and an electrical insulating layer on the main body portion; a mounting layer on the electrical insulating layer, in which the mounting layer includes a first mounting pad and a second mounting pad electrically isolated from one another; a laser diode bar on the first mounting pad; a contact bar on the second mounting pad; a first solder layer providing an electrical connection between the contact bar and the second mounting pad; and multiple wire bonds providing an electrical connection from a top surface of the laser diode bar to a top surface of the contact bar.
In general, in some aspects, the subject matter of the present disclosure encompasses laser diode heat sinks that include: multiple planar foils, in which each planar foil of the multiple planar foils includes a first face and a second face opposite the first face, the multiple planar foils being arranged in a stack along a stacking direction, with the second face of each planar foil of the plurality of planar foils arranged on a first face of a respective preceding planar foil in the stack. The first face of each planar foil of the multiple planar foils includes a corresponding elongated trench extending substantially along a second direction that is perpendicular to the stacking direction, and, for each planar foil of the multiple planar foils, a depth of the corresponding trench extends through less than an entire thickness of the planar foil.
A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.
A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/30 - Structure ou forme de la région active; Matériaux pour la région active
H01S 5/323 - Structure ou forme de la région active; Matériaux pour la région active comprenant des jonctions PN, p.ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p.ex. laser AlGaAs
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
H01S 5/327 - Structure ou forme de la région active; Matériaux pour la région active comprenant des jonctions PN, p.ex. hétérostructures ou doubles hétérostructures dans des composés AIIBVI, p.ex. laser ZnCdSe
19.
DIODE LASER ASSEMBLY AND METHOD FOR ASSEMBLING A DIODE LASER ASSEMBLY
The invention relates to a diode laser assembly (1), having a diode laser device (3), a first cooling element (5) with a first external surface (7), a second cooling element (9) with a second external surface (11), and at least one spacing device (13, 13.1, 13.2), with the diode laser device (3) and the at least one spacing device (13, 13.1, 13.2) being spaced from each other between the first cooling element (5) and the second cooling element (9) on the first external surface (7) and on the second external surface (11 ) respectively, the first cooling element (5) and the second cooling element (9) being each designed to cool the diode laser device (3). According to the invention, the diode laser device (3) comprises a first diode base (15) and a second diode base (17), with the diode laser device (3) being arranged with the first diode base (15) on the first external surface (7) in a first front region (23) thereof and/or with the second diode base (17) on the second external surface (11) in a second front region (25) thereof, and with the at least one spacing device (13, 13.1, 13.2) being designed to specify a location of the first cooling element (5) and of the second cooling element (9) relative to one another such that the first external surface (7) in the first front region (23) is arranged parallel to the first diode base (15), and/or such that the second external surface (11) in the second front region (25) is arranged parallel to the second diode base (17).
The invention relates to a diode laser assembly (1) comprising a diode laser unit (3) and comprising at least one heat dissipation unit (5, 5', 5''), wherein at least sections of the diode laser unit (3) are arranged on the at least one heat dissipation unit (5, 5', 5''), wherein the diode laser unit (3) is designed to emit a laser beam over via an emission surface (9), wherein the at least one heat dissipation unit (5, 5', 5'') is designed to dissipate heat from the diode laser unit (3). In addition, at least on a front side (13), which is on the same side of the diode laser assembly (1) as the emission surface (9), the at least one heat dissipation unit (5, 5', 5'') has at least one first end surface section (15, 15', 15'', 15''',15'''') oriented obliquely relative to the emission surface (9).
The invention relates to a diode laser arrangement (1) having a diode laser device (3) and at least one cooling device (7, 7.1, 7, 2), wherein the at least one cooling device (7, 7.1, 7, 2) is arranged on the diode laser device (3), wherein the at least one cooling device (7, 7.1, 7, 2) is designed to cool the diode laser device (3), wherein the at least one cooling device (7, 7.1, 7, 2) has a contact body (11, 11.1, 11.2) and at least one heat conducting insert (13, 13.1a, 13.1b, 13.2), the contact body (11, 11.1, 11.2) comprising a first material or consisting of a first material, and the at least one heat conducting insert (13, 13.1a, 13.1b, 13.2) having a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body (11, 11.1, 11.2) being arranged on the diode laser device (3). According to the invention, the at least one heat conducting insert (13, 13.1a, 13.1b, 13.2) is embedded in the contact body (11, 11.1, 11.2).
The invention relates to a diode laser arrangement (1), having a diode laser device (3), which is configured to emit a laser beam, at least one cooling device (5), which is configured to cool the diode laser device (3), a first connection layer (7), and a second connection layer (9), wherein the first connection layer (7) is fixedly arranged on a base surface (13) of the diode laser device (3) and the second connection layer (9) is fixedly arranged on a contact surface (11) of the at least one cooling device (5), or the first connection layer (7) is fixedly arranged on the contact surface (11 ) and the second connection layer (9) is fixedly arranged on the base surface (13), wherein the first connection layer (7) is fixedly connected to the second connection layer (9) so that the diode laser device (3) and the at least one cooling device (5) are fixedly connected to one another via the first connection layer (7) and the second connection layer (9). According to the invention, the first connection layer (7) has a plurality of nano wires.
The invention relates to a diode laser assembly (1) for cooling and supplying power to laser diode laser units (5), comprising at least two stacks (3), each having a diode laser unit (5) which is designed to emit a laser beam (47), an upper cooling unit (7) and a lower cooling unit (9), wherein the respective diode laser unit (5) is arranged on the upper cooling unit (7) and on the lower cooling unit (9) in such a way that the diode laser unit (5) is arranged between the upper cooling unit (7) and the lower cooling unit (9), wherein the upper cooling unit (7) and the lower cooling unit (9) are each designed to cool the diode laser unit (5) arranged in-between, and wherein the upper cooling unit (7) and the lower cooling unit (9) are each electrically connected to the diode laser unit (5) arranged in-between. In addition, the upper cooling unit (7) and/or the lower cooling unit (9) of a stack (3) is/are each designed as a microchannel cooler, wherein the upper cooling unit (7) and/or the lower cooling unit (9) of a stack (3) each has/have substantially no electrical insulation relative to the diode laser unit (5) arranged in-between.
The invention relates to a diode laser assembly (1), having at least one emitter (4), a first cooling device (13), a second cooling device (15) and a first connecting layer (17, 17), wherein the at least one emitter (4) is designed to emit a laser beam, with the at least one emitter (4) being arranged between the first cooling device (13) and the second cooling device (15), wherein the first cooling device (13) and the second cooling device (15) are each designed to cool the at least one emitter (4), with the at least one emitter (4) being connected by the first connecting layer (17, 17*) to the first cooling device (13), and with the first connecting layer (17, 17*) comprising or consisting of a connecting material selected from a group consisting of gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminium, an aluminium alloy, indium, an indium alloy, lead, and a lead alloy.
A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.
A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.
H01S 5/32 - Structure ou forme de la région active; Matériaux pour la région active comprenant des jonctions PN, p.ex. hétérostructures ou doubles hétérostructures
Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi- chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.
Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
H01S 5/10 - Structure ou forme du résonateur optique
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C30B 23/06 - Chauffage de l'enceinte de dépôt, du substrat ou du matériau à évaporer
A laser module has a unitary base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source with at least a first and a second plurality of stepped platforms, each platform accommodating a cooling channel inside at a predetermined depth below the top surface of the platform to conduct a flow of cooling fluid provided on an inlet, the cooling channel running under a platform having microchannels, the cooling channels being connected to a fluid inlet with an inlet manifold that provides cooling fluid at the inlet and an outlet manifold to dispose the cooling fluid with waste heat at an outlet, the laser module producing in one embodiment no less than 100 Watt of optical power.
A laser diode assembly contains a plurality of laser diode chips (1402) packaged closely in a row. Each laser diode chip is bonded on both P-side and N-side to first and second sub-mounts (1409,1410). The sub-mounts are then attached to a cooling carrier (1401), with both bonding surfaces perpendicular to the top surface of the carrier. The direction of laser radiation is parallel to the carrier top surface, and the distance between the top (1404) of the active area (1403) of the laser diode chip and the carrier is preferably in a range of half a pitch (1413) between individual laser sources packaged in a row, preferably in a range of 0.2 mm to 1 mm to allow efficient cooling for high power operation. The sub-mounts may be electrically conductive, or they may be of insulating material at least partially covered with a conducting layer.
A laser diode assembly contains a plurality of laser diode chips packaged closely in a row. Each laser diode chip is bonded on both P-side and N-side to first and second sub-mounts. The sub-mounts are then attached to a cooling carrier, with both bonding surfaces perpendicular to the top surface of the carrier. The direction of laser radiation is parallel to the carrier top surface, and the distance between the top of the active area of the laser diode chip and the carrier is preferably in a range of half a pitch between individual laser sources packaged in a row or preferably in a range of 0.2 mm to 1 mm to allow efficient cooling for high power operation. The sub-mounts may be electrically conductive, or they may be of insulating material at least partially covered with a conducting layer. A laser diode chip is bonded uniquely to a set of sub-mounts or may share a sub-mount with another laser diode chip.
A laser module has a unitary base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source with at least a first and a second plurality of stepped platforms, each platform accommodating a cooling channel inside at a predetermined depth below the top surface of the platform to conduct a flow of cooling fluid provided on an inlet, the cooling channel running under a platform having microchannels, the cooling channels being connected to a fluid inlet with an inlet manifold that provides cooling fluid at the inlet and an outlet manifold to dispose the cooling fluid with waste heat at an outlet, the laser module producing in one embodiment no less than 100 Watt of optical power.
Disclosed is a laser module with a base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source. The module has at least a first plurality of stepped platforms and a second plurality of stepped platforms. Each platform accommodates a laser source that is part of a plurality of laser sources. The plurality of laser sources is arranged in a single plane to have each laser source emit laser radiation in the same direction perpendicular to the plane. Laser radiation generated by the laser sources associated with the first plurality of platforms is combined into a first combined beam and the laser radiation generated by the laser sources associated with the second plurality of platforms is combined into a second combined beam. The first and second combined beam are combined by an optical combiner and coupled into an optical fiber.
Apparatus and methods are provided for a laser module with a base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source. The module has at least a first plurality of stepped platforms and a second plurality of stepped platforms. Each platform accommodates a laser source that is part of a plurality of laser sources. The plurality of laser sources is arranged in a single plane to have each laser source emit laser radiation in the same direction that is perpendicular to the single plane. Laser radiation generated by the laser sources associated with the first plurality of platforms is combined into a first combined beam of laser radiation and the laser radiation generated by the laser sources associated with the second plurality of platforms is combined into a second combined beam of laser radiation. The first and second combined beam of laser radiation are combined by an optical combiner and coupled into an optical fiber.
A laser system (411) includes at least two sources (519) configured to provide at least two spatially separated laser beams (432), and a mount configured to mount at least two sources (419) along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordiante. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams (423) interleave in the axial direction at a center region (432) of the arc.
A laser system (511) includes a first source (519/2) and a second source (519/1) for generating a first laser beam (523/2) and a second laser beam (523/1), respectively, and a mirror arrangement (530/1, 567) including a first interleaving laser mirror (531/1) with a high reflecting area configured to reflect the first laser beam (523/2) and a first high transmitting area configured to transmit the second laser beam (523/1).
A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc.
A laser system includes a first source and a second source for generating a first laser beam and a second laser beam, respectively, and a mirror arrangement including a first interleaving laser mirror with a high reflecting area configured to reflect the first laser beam and a first high transmitting area configured to transmit the second laser beam.
A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.
Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer having a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and an active layer between the first cladding layer and the second cladding layer and extending the distance between a first facet and a second facet of the diode laser. The diode laser includes a cap layer located near the second cladding layer, a ridge formed in the cap layer and the second cladding layer, and a contact layer applied at least at the ridge for injecting current into the active layer. The contact layer contacts the cap layer in a contact region having a length that is less than the distance between the first facet and the second facet such that the cap layer includes an unpumped facet region. Methods to make the new lasers are also described.
brevets
