Abrégé

A thermal detector includes a readout substrate, including a readout circuit; and an absorbent membrane suspended above the readout substrate and thermally isolated therefrom, and including a thermometer transducer electrically connected to the readout circuit. The thermometer transducer is formed by a plurality of thermometer diodes connected in parallel and the readout circuit is adapted to activate the thermometer diodes selectively. The thermometer diodes and the readout circuit are configured so as to have at least the following two electrical configurations: a first configuration where a total electrical current Id circulating in the thermometer transducer has a first value Id,1; and a second configuration where the total electrical current Id has a second value Id,2 different from Id,1.

Classes IPC  ?

• G01J 5/24 - Utilisation de circuits spécialement adaptés, p. ex. de circuits en pont

Abrégé

A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining x n = c ⌊ n P ⌋ * ⁢ s n , A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining x n = c ⌊ n P ⌋ * ⁢ s n , and respectively A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining x n = c ⌊ n P ⌋ * ⁢ s n , and respectively y n = c ⌊ n P ⌋ ⁢ z n , A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining x n = c ⌊ n P ⌋ * ⁢ s n , and respectively y n = c ⌊ n P ⌋ ⁢ z n , with Ts the sampling period T=P×Ts; determining the frequency fd and respectively fg of the sequence xn and respectively yn; computing a shift Δf to be applied to synchronize to the received signal via: A method for synchronizing in a receiver receiving an IR-UWB signal including data packets having a preamble comprising a first preamble portion of at least two occurrences of a first preamble sequence of N pulses spaced apart by a period T and that are each equal to a reference pulse weighted by a complex coefficient cn, n=0 to N−1 indicating the rank of the pulse in the first sequence and a second preamble portion of at least two occurrences of a second preamble sequence equal to the complex conjugate of the first sequence, comprising: considering the NP successive samples sn for n=0 to NP−1, of a slice, of duration NT, of the first and respectively second preamble portion of a received packet, determining x n = c ⌊ n P ⌋ * ⁢ s n , and respectively y n = c ⌊ n P ⌋ ⁢ z n , with Ts the sampling period T=P×Ts; determining the frequency fd and respectively fg of the sequence xn and respectively yn; computing a shift Δf to be applied to synchronize to the received signal via: f d = 1 N ⁢ P ⁢ T s ⁢ ( ⌊ t 0 ⁢ m T ⌋ + ϵ ) + Δ ⁢ f f g = - 1 N ⁢ P ⁢ T s ⁢ ( ⌊ t 0 ⁢ m T ⌋ + ϵ ) + Δ ⁢ f

Classes IPC  ?

• H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission
• H04L 27/26 - Systèmes utilisant des codes à fréquences multiples
• H04W 56/00 - Dispositions de synchronisation

Abrégé

A method of detection of particles of a first type, called first particles (P1), present in a liquid (L), the liquid also containing particles of a second type distinct from the first type, and called second particles (P2), the liquid (L) being placed in a fluidic chamber, the first particles (P1) each having a density distinct from that of the liquid (L) and from that of each of the second particles (P2), the fluidic chamber having a closed volume occupied entirely by the liquid (L), the detection being achieved by capturing images of the fluidic chamber.

Classes IPC  ?

• G06V 20/69 - Objets microscopiques, p. ex. cellules biologiques ou pièces cellulaires
• G01N 15/075 - Recherche de la concentration des suspensions de particules par des moyens optiques
• G06T 7/20 - Analyse du mouvement
• G06T 7/70 - Détermination de la position ou de l'orientation des objets ou des caméras

Abrégé

The invention relates to a method for manufacturing a thermoelectric device equipped with a heat sink, comprising the following steps: A) making (100) a first portion of said thermoelectric device, said first portion being equipped with a heat sink, step A) during which a first series of studs made of a semiconductor material with a given type of doping is deposited by additive manufacturing; B) producing (200) a second portion of the thermoelectric device, step B) during which a second series of studs made of a semiconductor material with another type of doping is deposited by additive manufacturing; C) assembling (300) the second portion of the device to the first portion.

Classes IPC  ?

• H10N 10/01 - Fabrication ou traitement
• H10N 10/13 - Dispositifs thermoélectriques comportant une jonction de matériaux différents, c.-à-d. dispositifs présentant l'effet Seebeck ou l'effet Peltier fonctionnant exclusivement par les effets Peltier ou Seebeck caractérisés par les moyens d'échange de chaleur à la jonction

Abrégé

A device and a method for reading a code word in a resistive memory protected by an ECC where each memory cell includes resistive devices for storing a bit of a code word. The method allows the selection, as a function of the value of a syndrome, of a corrected word following a first decoding process without inversion of weak-bits or of a corrected word following a second decoding process with inversion of weak-bits. If the computed syndrome determines that the first decoding process has indicated an uncorrectable error or determines that the second decoding process has indicated neither an uncorrectable error nor an n-error (i.e., a maximum of n erroneous bits per code word), the selected word is the corrected word with inversion of the weak-bits. Otherwise, the selected word is the corrected word without inversion of the weak-bits.

Classes IPC  ?

• G11C 29/42 - Dispositifs de vérification de réponse utilisant des codes correcteurs d'erreurs [ECC] ou un contrôle de parité

Abrégé

The invention relates to a measurement system (1) and to the associated measurement method, the system comprising an FTIR spectrometer (2) comprising a tracker module (20), a protection device (3) comprising a casing (30) and a protection module (31) movable between a closed position (P0) and at least one open position (P1). For this purpose, the protection module (31) comprises a cover (310) that is rotatable about an axis (A1) parallel to the main extension plane of an upper surface (30a) of the casing (30), so as to move between the closed position (P0) and the at least one open position (P1); and an actuator (311) configured to drive the cover between the closed position (P0) and the at least one open position (P1).

Classes IPC  ?

• G01J 3/02 - SpectrométrieSpectrophotométrieMonochromateursMesure de la couleur Parties constitutives
• G01J 3/45 - Spectrométrie par interférence

Abrégé

The present description relates to a device (EVAL-NUM2) for a particle-counting detector (DET2), wherein: the device comprises N digitization channels, CHi, with N an integer strictly greater than 1 and i an index ranging from 1 to N, each channel CHi comprises a comparator, COMPi, associated with a threshold, Thi, of the channel and delivering an active first pulsed digital signal, outi, if a pulsed voltage (outFE) is greater than the threshold of the channel, but otherwise remaining inactive; the thresholds Thi are increasing with index i; for i ranging from 2 to N, each comparator COMPi operates selectively in a low-power mode and a high-power mode; and the device comprises a circuit (BOOST) that controls, for i ranging from 2 to N, each comparator COMPi to the low-power mode or to the high-power mode depending on at least the first signal outi of at least one of the channels CHi.

Classes IPC  ?

• G01T 1/17 - Dispositions de circuits non adaptés à un type particulier de détecteur

Abrégé

The present description relates to a device (EVAL-NUM1) for a particle-counting detector (DET1), the device comprising: digitization channels (CHi) that each receive an analog pulsed voltage (outFE) and each deliver an active first pulsed signal (outi) if the voltage is greater than a threshold (Thi) of the channel, but otherwise remain inactive; and a circuit (PULSE-RESET) configured to: - for each channel (CHi), receive the first signal (outi) of the channel, generate a second pulsed signal (outci), and switch the second signal to an active state when the first signal is in the active state; and - force, each time the second signal (outci) of the channel (CH1) of lowest threshold (TH1) is switched to the active state, adoption of the inactive state by the first signals (outi) and/or second signals (outci) at the end of a first time period (tmp1) beginning when the second signal of the channel of lowest threshold is switched to the active state.

Classes IPC  ?

• G01T 1/17 - Dispositions de circuits non adaptés à un type particulier de détecteur

Abrégé

The invention relates to a method for recovering one or more metals selected from among technetium, ruthenium, palladium and rhenium from an aqueous solution, which method comprises precipitating the one or more metals from the solution by adding a reagent to the solution, followed by collecting the resulting precipitate, and which method is characterised in that the reagent comprises – or consists of – a mixture of 1,10-phenanthroline and a nickel(II) salt selected from among nickel(II) nitrate and nickel(II) sulphate. The method applies to the recovery of all or some of the technetium, ruthenium and/or palladium present in aqueous solutions of fission products, prior to operations for conditioning the fission products by vitrification; and to the recovery of all or some of the ruthenium, palladium and/or rhenium from solutions obtained through the treatment of industrial and/or urban waste with nitric acid.

Classes IPC  ?

• C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés
• C22B 11/00 - Obtention des métaux nobles
• C22B 60/00 - Obtention des métaux ayant un nombre atomique de 87 ou plus, c.-à-d. métaux radioactifs
• C22B 61/00 - Obtention des métaux non prévus ailleurs dans la présente sous-classe
• G21F 9/04 - Traitement des liquides
• G21C 19/46 - Procédés aqueux

Abrégé

A device for sequencing at least one nucleotide strand including a support, at least one portion movable relative to the support, means for setting the movable portion in vibration at a given frequency, means for measuring the vibration frequency of the movable portion, and a recognition probe mechanically connecting the support and the movable portion, the recognition probe including at least one nucleotide sequence.

Classes IPC  ?

• C12Q 1/6874 - Méthodes de séquençage faisant intervenir des réseaux d’acides nucléiques, p. ex. séquençage par hybridation [SBH]

Abrégé

A method for measuring the attenuation coefficient of a scattering and/or absorbing part of a body using diffuse reflectance spectroscopy. The method includes emitting optical radiation, the intensity and/or the optical frequency of which are modulated, with at least part of the optical radiation, called a probe signal, irradiating the body; receiving part of the probe signal, called a backscattered signal, that is scattered and reflected by the body and measuring the path length of the backscattered signal; measuring the reflectance of the part of the body traversed by the backscattered signal; and computing the attenuation coefficient based on the measured path length and on the reflectance.

Classes IPC  ?

• G01N 21/47 - Dispersion, c.-à-d. réflexion diffuse

Abrégé

The invention relates to a set of luminescent light concentrators for wide-spectrum emission, the set being intended to be pumped by pump radiation having a pump wavelength and comprising: - a first luminescent light concentrator (C1), the first concentrator being made of a first material suitable for absorbing the pump radiation and then emitting first luminescent radiation (L1) having a first central emission wavelength within the first concentrator, - a second luminescent light concentrator, contiguous to the first concentrator, made of a second material suitable for absorbing the pump radiation and then emitting second luminescent radiation (L2) having a second central emission wavelength longer than the first wavelength within the second concentrator, - a third luminescent light concentrator, contiguous to the second concentrator, made of a third material suitable for absorbing the pump radiation and then emitting third luminescent radiation (L3) having a third central emission wavelength longer than the second wavelength within the third concentrator, such that the set of concentrators is suitable for emitting, through a first exit face, an output light emission containing the first, second and third central emission wavelengths and formed from a portion of each of the first luminescent radiation, second luminescent radiation and third luminescent radiation when the first, second and third luminescent light concentrators all absorb the pump radiation.

Classes IPC  ?

• F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
• F21K 9/61 - Agencements optiques intégrés dans la source lumineuse, p. ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière en utilisant des guides de lumière
• F21K 9/64 - Agencements optiques intégrés dans la source lumineuse, p. ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière en utilisant des moyens de conversion de longueur d’onde distincts ou espacés de l’élément générateur de lumière, p. ex. une couche de phosphore éloignée
• F21V 9/32 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
• F21V 9/38 - Combinaison de plusieurs éléments photoluminescents de matériaux différents
• G03B 21/20 - Boîtes à lumière
• G02B 19/00 - Condenseurs
• H01S 3/04 - Dispositions pour la gestion thermique
• H01S 3/08 - Structure ou forme des résonateurs optiques ou de leurs composants
• H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente

Abrégé

The invention relates to an electronic device comprising: - a functional zone (C1) comprising a cryogenic component configured to operate at a temperature below 10 K, - a control zone (C2) comprising an electronic control component configured to control the cryogenic component, - a passive zone (C3) comprising a passive structure (22) electrically connected to the cryogenic component and to the electronic control component, the passive structure (22) being based on a superconducting material and integrated into a dielectric matrix (13). Advantageously, the dielectric matrix (13) comprises a cavity (52) around the passive structure (22), so that the passive structure (22) is partially suspended in the cavity (52).

Classes IPC  ?

• H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
• H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
• H05K 3/46 - Fabrication de circuits multi-couches
• G06N 10/00 - Informatique quantique, c.-à-d. traitement de l’information fondé sur des phénomènes de mécanique quantique
• H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
• H05K 1/02 - Circuits imprimés Détails
• B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
• G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p. ex. couplage ou commande de qubit
• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• H01L 23/44 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température le dispositif complet étant totalement immergé dans un fluide autre que l'air
• H01L 23/498 - Connexions électriques sur des substrats isolants
• H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
• H10N 69/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément supraconducteur couvert par le groupe

Abrégé

A tubular reactor includes a bed of catalyst powder confined within an annular space, a hollow insert having a distribution chamber and a collection chamber, and a second wall having at least one distribution opening and at least one collection opening. The second wall of the hollow insert includes, on at least a first longitudinal portion of the insert defined along the longitudinal axis, at least one offset distribution opening and at least one offset collection opening, every offset distribution opening being contained in a plane transverse to the longitudinal axis different from any plane transverse to the longitudinal axis containing an offset collection opening so that the direction of flow of gas distributed and/or admitted between an offset collection opening and an offset distribution opening has an axial component.

Classes IPC  ?

• B01J 8/02 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes
• B01J 8/06 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes dans des réacteurs tubulairesProcédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes les particules solides étant disposées dans des tubes

Abrégé

An imaging device for acquiring visible and infrared images, including a visible matrix sensor, and infrared matrix sensor, and a readout integrated circuit superimposed on the visible matrix sensor and on the infrared matrix sensor and formed by a readout stack including electronic elements and an interconnection stack. The readout stack is located between the sensitive layers of the matrix sensors, and the interconnection stack is located on the rear face of the infrared matrix sensor. In addition, conductive vias electrically connect respectively the interconnection stack to electronic elements of the visible matrix sensor, to electronic elements of the readout stack, and to electronic elements of the infrared matrix sensor.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

A method is for generating a cryptographic key from an SRAM memory and device implements such a method. The method includes steps of biased initialisation of a first set of cells located in a first region of the SRAM memory so as to promote the establishment, in a first logic state, of the cells of the first set, storing, in a second set of cells of a second region of the memory, the respective states of the cells of the first set and resulting from the first biased initialisation, then, performing a second biased initialisation of the first set of cells so as to promote a setting in a second logic state, complementary to the first logic state, the cells of the first set. The method further includes, after the first biased initialisation and the second biased initialization, establishing an N-bit digital key.

Classes IPC  ?

• G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
• G06F 21/64 - Protection de l’intégrité des données, p. ex. par sommes de contrôle, certificats ou signatures

Abrégé

The invention relates to an optoelectronic device (1) comprising a substrate (10) extending mainly in a longitudinal plane (XY), an array of diodes (100a, 100b, 100c, 100d) arranged on the substrate (10), and at least one first diode (100a) bordered by a trench (1000). The trench is delimited by a flank (150a) of the first diode and separates the first diode from a second diode (100b). The first diode is configured to emit or receive light within a range of interest. The trench comprises a dielectric layer (200) that is transparent in the range of interest and has a lateral portion (200a) covering the flank of the first diode, and a volume (1500) in contact with the lateral portion, so as to define an interface with the lateral portion. The interface forms a reflection interface (250a) and forms a reflection angle of less than 89° with the longitudinal plane.

Classes IPC  ?

• H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
• H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
• H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
• H01L 33/54 - Encapsulations ayant une forme particulière

Abrégé

A computer-implemented method for processing experimental data of a solid to be characterized, including atoms and including one or more defects, the experimental data coming from at least one sensor and having a multimodal distribution. The method includes the representation, in a space called descriptor space, of dimension K, comprised between 10 and 108, of one or more reference solid(s) and the data; the calculation for at least one portion of the atoms of the solid to be characterized of an experimental confidence score in the descriptor space, relative to the atoms of the reference solid; and the classification of the atoms of the structure depending on the experimental confidence score.

Classes IPC  ?

• G16C 20/70 - Apprentissage automatique, exploration de données ou chimiométrie
• G16C 20/20 - Identification d’entités moléculaires, de leurs parties ou de compositions chimiques

Abrégé

The present description concerns an antenna (200) comprising: an amplifier array (201) comprising a plurality of first elementary cells (203); a transmitarray (105) comprising a plurality of second elementary cells (107); and at least one source (101), wherein said at least one source (101) is configured to irradiate, or to be irradiated by, the transmitarray (105), and the amplifier array (201) is configured to irradiate and to be irradiated by the transmitarray (105).

Classes IPC  ?

• H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
• H01Q 13/02 - Cornets de guide d'onde
• H01Q 21/29 - Combinaisons d'unités d'antennes de types différents interagissant entre elles pour donner une caractéristique directionnelle désirée

Abrégé

The invention relates to a method for obtaining a layer at least partially made of a nitride (N), first comprising the provision of a stack comprising at least one assembly of pads (1000A1-1000B4) extending from a substrate (100). Each pad comprises at least one creep section (220A1-220A5) and one crystalline section (300A1,300A5) surmounting the creep section (200A1-200A5). Then, a crystallite (510A1-510A5) is epitaxially grown on at least some of said pads until coalescence of the crystallites, so as to form a nitride layer (550A). The pads of the assembly are distributed over the substrate, such that the relative arrangement of the pads of the assembly is such that during the epitaxy of the crystallites, the progressive coalescence of the crystallites is always done between, on the one hand, a crystallite or a plurality of coalesced crystallites and, on the other hand, an isolated crystallite.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
• C30B 29/40 - Composés AIII BV

Abrégé

Physical random value generation using a resistive memory device The present disclosure relates to a device configured to generate a random value, the device comprising: a resistive memory device (102) capable of being incrementally programmed; and a control circuit (104) configured to: - perform a first programming operation of the resistive memory device with first programming parameters in order to generate a first conductance variation of a first polarity in the resistive memory device; - perform a second programming operation of the resistive memory device with second programming parameters in order to generate a second conductance variation of a second polarity in the resistive memory device, the second polarity being the opposite polarity to the first polarity; and - generate the random value by reading a conductance value of the resistive memory device following the first and second programming operations.

Classes IPC  ?

• G06F 7/58 - Générateurs de nombres aléatoires ou pseudo-aléatoires
• G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou

Abrégé

An assembly including a stack of solid oxide cells of the SOEC/SOFC type and a clamping system for the stack. This assembly furthermore includes at least one heating plate, demountable and interchangeable, inserted in a housing of at least one of the top and bottom clamping plates, the housing being formed in the thickness of the at least one of the top and bottom clamping plates, and comprising first and second opposite ends, at least one of which emerges on the lateral face-of the at least one of the top and bottom clamping plates, being located inside, at a distance from its main top and bottom faces substantially parallel to each other.

Classes IPC  ?

• H01M 8/248 - Moyens pour comprimer les empilements d’éléments à combustible
• C25B 9/05 - Cellules sous pression
• C25B 9/67 - Moyens de chauffage ou de refroidissement
• C25B 9/77 - Assemblages comprenant plusieurs cellules du type filtre-presse avec diaphragmes
• C25B 15/023 - Mesure, analyse ou test pendant la production électrolytique
• H01M 8/04007 - Dispositions auxiliaires, p. ex. pour la commande de la pression ou pour la circulation des fluides relatives à l’échange de chaleur
• H01M 8/0432 - TempératureTempérature ambiante
• H01M 8/12 - Éléments à combustible avec électrolytes solides fonctionnant à haute température, p. ex. avec un électrolyte en ZrO2 stabilisé
• H01M 8/2432 - Groupement d'éléments élémentaires de forme plane

Abrégé

In the present invention, thanks to a prospective multicenter cohort study including 200 pregnant patients with five-serum sampling per patient, inventors investigated the concentrations of protein biomarkers in the plasma of high risk pregnant women during the second and third trimesters to predict spontaneous preterm birth. Inventors demonstrated that PROK1 (Prokineticin 1) also called EG-VEGF (Endocrine Gland-derived Vascular Endothelial Growth Factor), is secreted by the placenta and exhibits increased serum levels in patients with sPTB, before 37 weeks of gestation, compared with uncomplicated pregnant women. More precisely, Women with spontaneous preterm birth exhibited higher concentrations of serum PROK1/EG-VEGF than uncomplicated patients at 20 weeks, 24 weeks, 28 weeks and 32 weeks. Accordingly, serum PROK1/EG-VEGF concentrations could be considered as biomarker of spontaneous preterm birth in high-risk pregnant women.

Classes IPC  ?

• G01N 33/68 - Analyse chimique de matériau biologique, p. ex. de sang ou d'urineTest par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligandsTest immunologique faisant intervenir des protéines, peptides ou amino-acides

Abrégé

A method for producing a device comprising GAA transistors. Advantageously, the channels of the transistors are produced by deposition of a semiconductor material, preferably a 2D material, after successive removal of certain layers of the initial stack. The gates-all-around are produced after selective removal of the other layers from the initial stack. The initial stack does not comprise the semiconductor material, nor the material of the gates. The subsequent deposition of the semiconductor material aims to better preserve the semiconductor material.

Classes IPC  ?

• H10D 30/67 - Transistors à couche mince [TFT]
• H10D 30/00 - Transistors à effet de champ [FET]
• H10D 30/01 - Fabrication ou traitement
• H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
• H10D 62/80 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux
• H10D 62/832 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé étant des matériaux du groupe IV comprenant deux éléments ou plus, p. ex. SiGe
• H10D 64/01 - Fabrication ou traitement
• H10D 84/83 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET de composants à effet de champ uniquement de transistors FET à grille isolée [IGFET] uniquement

Abrégé

A cable cylinder having a screw rotatable by a motor, a nut cooperating with the screw to move in the body, the cable cylinder having a pair of upstream and downstream pulleys on either side of the nut. In at least one of the pairs, the pulleys are rotationally secured to one another. The two cables each cooperating with one of the upstream cables and one of the downstream cables to define strands parallel to the screw rotational axis and attached to the nut. One of the cables forms a loop while the other extends beyond its downstream pulley to cooperate with a remote pulley rotatably mounted about a separate axis of rotation, the remote pulley forming a return to return the extended cable to the upstream pulley, the extended cable prevented from sliding over its upstream or associated downstream pulley that is rotationally engaged.

Classes IPC  ?

• F16H 37/12 - Transmissions comportant principalement une transmission à engrenages ou à friction, des maillons ou des leviers, des cames, ou bien des organes appartenant à deux des trois types ci-dessus au moins

Abrégé

The present description concerns an antenna (100) comprising an amplifier array (101) comprising a plurality of first elementary cells (103); and a transmitarray (105) comprising a plurality of second elementary cells (107), wherein the amplifier array (101) is configured to irradiate, or to be irradiated by, the transmitarray (105), the amplifier array (101) being separated from the transmitarray (105) by a distance equal, to within 20%, to a central transmission and/or reception wavelength of the antenna (100).

Classes IPC  ?

• H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
• H01Q 21/28 - Combinaisons d'unités ou systèmes d'antennes sensiblement indépendants et n’interagissant pas entre eux

Abrégé

xy oxyzz along the Z-axis, the specific zone (115) being located in a core of the solenoid (113).

Classes IPC  ?

• B29C 64/106 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux
• B22F 10/12 - Formation d’un corps vert par photopolymérisation, p. ex. stéréolithographie [SLA] ou traitement numérique de la lumière [DLP]
• B29C 64/124 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux utilisant des couches de liquide à solidification sélective
• B29C 64/20 - Appareil pour la fabrication additiveDétails ou accessoires à cet effet
• B29C 64/241 - Moyens d’entraînement pour mouvement rotatif
• B29C 64/30 - Opérations ou équipements auxiliaires
• B33Y 10/00 - Procédés de fabrication additive
• B33Y 30/00 - Appareils pour la fabrication additiveLeurs parties constitutives ou accessoires à cet effet
• B33Y 70/10 - Composites de différents types de matériaux, p. ex. mélanges de céramiques et de polymères ou mélanges de métaux et de biomatériaux
• H01F 7/02 - Aimants permanents
• H01F 7/20 - Électro-aimantsActionneurs comportant des électro-aimants sans armature
• H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants

Abrégé

22111211 = 2.85×1018cm-322 = 5.40×1020cm-3, - an interface zone, between the carrier substrate and the working layer, comprising nodules and regions of direct contact between the working layer and the carrier substrate, the nodules comprising a metal or semiconductor material other than silicon carbide, the interface zone having an average resistivity of less than or equal to 0.01 mohm.cm2, a dopant concentration profile along a thickness of the semiconductor structure: - being in the form of a step, and - being devoid of a doping peak in the interface zone, or - exhibiting a doping peak in the interface zone, the extremum of which corresponds to a third dopant concentration equal to the second dopant concentration to within plus or minus 10%. The invention also relates to a process for fabricating such a semiconductor structure.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage

Abrégé

A parameterising method and system integrated within a high-intensity focused ultrasound (HIFU) treatment device. The parameterising system includes a real-time simulation unit that makes it possible to predict, on the basis of geometric and physiological parameters of tissue regions in the area to be treated, and treatment parameters, the distribution of the ultrasonic field within the area. The computation is performed in real time by means of a metamodel: the ultrasonic field is estimated from an interpolation of maps of the ultrasonic field which are pre-computed and stored in a database, the maps being associated with different values of the geometric and physiological parameters of the tissue regions in question. The thermal dose applied at each point during treatment is subsequently computed and the tissue response is estimated. It is possible for the practitioner to check at any time that the simulated treatment is being used in accordance with tissue regions to be necrotised and tissue regions to be spared. The treatment parameters can be iteratively adjusted in order to conform to the objective.

Classes IPC  ?

• A61N 7/02 - Hyperthermie localisée par ultrasons

Abrégé

A process for purifying ruthenium from an aqueous nitric acid solution which is present together with technetium and metal impurities, at a concentration at least 10 times lower than that of the technetium. A process for producing ruthenium-97 from a technetium-99 target which has been proton-irradiated beforehand, including implementation of the purification process. The processes herein can be used for production of ruthenium-97-based radiopharmaceuticals used in nuclear medicine for the diagnosis of cancer by imaging and the treatment thereof by targeted radiotherapy.

Classes IPC  ?

• C01G 55/00 - Composés du ruthénium, du rhodium, du palladium, de l'osmium, de l'iridium, ou du platine

Abrégé

A method of transferring a layer from a source substrate to a destination substrate, comprising the following steps: a) activating a bonding surface of said layer and a bonding surface of the destination substrate, by ion etching of said surfaces, or by sputtering of a bonding material onto said surfaces; and b) after step a), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate, wherein, during step a), a masking ring covers a peripheral portion of the bonding surface of said layer, and/or a masking ring covers a peripheral portion of the bonding surface of the destination substrate; and wherein steps a) and b) are carried out under vacuum and with no rupture of vacuum between the two steps.

Classes IPC  ?

• H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
• B32B 37/00 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons

Abrégé

A method of transferring a layer from a source substrate to a destination substrate including the following steps: a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate c) removing the masking disk; d) activating the bonding surface of said layer and the bonding surface of the destination substrate; and e) placing into contact the bonding surface of said layer with the bonding surface of the destination substrate.

Classes IPC  ?

• H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
• B32B 37/00 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons

Abrégé

The invention relates to a method (100) for producing a multispectral filter array for an electromagnetic wave, the method comprising the following steps: - depositing (101) a layer of structuring material on a substrate; - structuring (102) the layer of structuring material in order to obtain a first structuring material pattern and a second structuring material pattern, each resin pattern having a curved upper surface; - conformally depositing (103) a first reflective layer on the first and second patterns, forming the first reflective layers of a first and a second color filter; - depositing (104) a layer of dielectric material on the first reflective layer so as to form the curved lower surfaces of the Fabry-Perot cavity dielectric layers of the first and second filters; - structuring (105, 106) the layer of dielectric material by nanoimprint lithography by means of a printing mould comprising at least two different curved imprints so as to form the curved upper surfaces of the Fabry-Perot cavity dielectric layers; - conformally depositing (107) a second reflective layer on the layer of dielectric material.

Classes IPC  ?

• G02B 5/201 -
• G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables

Abrégé

The present invention relates to a composite material comprising a porous solid support and at least one malonamide non-covalently bonded to the surface of this porous solid support. The present invention also relates to a process for preparing such a material and also to the use thereof for extracting and recovering palladium from an acid leaching solution containing same.

Classes IPC  ?

• B01J 20/22 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance organique
• B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
• B01J 20/32 - Imprégnation ou revêtement
• C22B 3/24 - Traitement ou purification de solutions, p. ex. de solutions obtenues par lixiviation par des procédés physiques, p. ex. par filtration, par des moyens magnétiques par adsorption sur des substances solides, p. ex. par extraction avec des résines solides
• C22B 11/00 - Obtention des métaux nobles

Abrégé

This invention relates to a method for preparing a cyclic anhydride such as succinic anhydride and methyl succinic anhydride from an unsaturated carboxylic acid such as acrylic acid or crotonic acid. This method can also be used in the manufacture of food additives, plasticisers, polymers of interest, in particular polyurethanes and elastanes, resins, coatings and pharmaceutical products.

Classes IPC  ?

• C07D 307/60 - Deux atomes d'oxygène, p. ex. anhydride succinique
• B01J 31/04 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant des composés organiques ou des hydrures métalliques contenant des acides carboxyliques ou leurs sels
• B01J 31/18 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant des complexes de coordination contenant de l'azote, du phosphore, de l'arsenic ou de l'antimoine
• B01J 31/20 - Carbonyles
• B01J 31/24 - Phosphines

Abrégé

A method for detecting biological objects by means of an SPR imaging detection system comprising an optical measurement device configured to generate plasmon resonance on a functionalized surface when said surface is exposed to a gas; the method comprising: an assimilation step by exposing the functionalized surface to a sample of interest formed of an aqueous carrier liquid containing the biological objects; a step of removing the liquid in contact with the functionalized surface and exposing the surface to a gas not containing the biological objects, said objects remaining bound to the ligands of the sensitive site of the functionalized surface; a step of acquiring an image of the sensitive site; a step of detecting the biological objects from the acquired image.

Classes IPC  ?

• G01N 33/569 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet pour micro-organismes, p. ex. protozoaires, bactéries, virus
• G01N 21/552 - Réflexion totale atténuée

Abrégé

The manufacture of a photovoltaic module includes providing a first layer having a skew shape, manufacturing a second layer having a skew shape, and then placing a stack further including photovoltaic cells and at least one encapsulating material in an assembly mold varying between a closure configuration delimiting a predetermined air gap and an opening configuration. In an assembly step, where the closure configuration of the assembly mold is adopted, the temperature within the stack is maintained at an operating temperature comprised between 70° C. and 180° C., and preferably between 80° C. and 150° C., during an assembly period adapted as a function of the at least one encapsulating material so that the at least one encapsulating material undergoes melting at least partially and to create an encapsulating assembly capable of adhering to the plurality of photovoltaic cells and to the first layer and/or to the second layer.

Classes IPC  ?

• H10F 19/80 - Encapsulations ou conteneurs pour des dispositifs intégrés, ou des ensembles de plusieurs dispositifs, comportant des cellules photovoltaïques
• B29C 70/70 - Enrobage intégral des inserts
• B29L 31/34 - Appareils électriques, p. ex. bougies ou leurs parties constitutives

Abrégé

The present invention is related to expressing an AHA5 protein in plants, and preferentially a mutated AHA5 protein leading to a constitutive activity of AHA5, to control stomatal closure and improve tolerance to drought conditions and yield in plants.

Classes IPC  ?

• C12N 15/82 - Vecteurs ou systèmes d'expression spécialement adaptés aux hôtes eucaryotes pour cellules végétales
• A01H 1/00 - Procédés de modification des génotypes
• A01H 5/10 - Graines
• A01H 5/12 - Feuilles
• A01H 6/46 - Gramineae ou Poaceae, p. ex. ivraie, riz, blé ou maïs
• C07K 14/415 - Peptides ayant plus de 20 amino-acidesGastrinesSomatostatinesMélanotropinesLeurs dérivés provenant de végétaux

Abrégé

A photonic sensor including an interferometer having a first arm and a second arm including respective optical waveguides, wherein the first arm includes: at least a first coupling device for coupling a guided propagation mode of the waveguide and a free propagation mode of an ambient medium; and an optical system configured to direct the free propagation mode toward the or a second coupling device for coupling the free propagation mode of the ambient medium and a guided propagation mode of the waveguide; whereby a light wave traversing the first arm travels one portion of its path through the ambient medium.

Classes IPC  ?

• G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
• G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
• G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence

Abrégé

This invention relates to a solid-state battery and its production method.

Classes IPC  ?

• H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
• H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
• H01M 4/04 - Procédés de fabrication en général
• H01M 10/04 - Structure ou fabrication en général
• H01M 10/0562 - Matériaux solides

Abrégé

The invention relates to a photovoltaic module, and to a method for producing same, comprising a step of producing a flexible interconnection structure (8) according to the following steps: - producing a routing film comprising a structural film (11), at least one conductive routing track (9A) on one face of the structural film (11), and at least one other conductive routing track (9B) on the other face of the structural film (11); - forming at least two connection regions (14) on a portion of a conductive routing track (9A, 9B); - for each connection region (14), creating a fold adjacent to the connection region (14), wherein the operations for placing the rear face layers further comprise the following steps: - positioning the flexible interconnection structure (8) on the rear face of the photovoltaic cells (4); - electrically connecting the connection regions (14).

Classes IPC  ?

• H01L 31/048 - Encapsulation de modules
• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV

Abrégé

The invention relates to a device for detecting a gas of interest emitted by an object, the device being intended to be arranged on an object, the gas of interest absorbing light in an absorption spectral band, wherein the device comprises: a contact face, configured to be arranged against the object, and configured to allow the gas of interest emitted by the object to pass through it; a collection chamber that opens onto the contact face and is delimited by a side wall, the side wall extending around a transverse axis perpendicular to the contact face; an intake opening that forms an air inlet, and is arranged through the side wall and configured to admit ambient air into the collection chamber; a photoacoustic gas sensor.

Classes IPC  ?

• A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
• A61B 5/145 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang
• G01N 29/24 - Sondes
• G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
• G01N 29/00 - Recherche ou analyse des matériaux par l'emploi d'ondes ultrasonores, sonores ou infrasonoresVisualisation de l'intérieur d'objets par transmission d'ondes ultrasonores ou sonores à travers l'objet
• G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
• G01N 21/3504 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p. ex. analyse de mélanges de gaz
• G01L 11/02 - Mesure de la pression permanente, ou quasi permanente d'un fluide ou d'un matériau solide fluent par des moyens non prévus dans les groupes ou par des moyens optiques
• G01L 11/04 - Mesure de la pression permanente, ou quasi permanente d'un fluide ou d'un matériau solide fluent par des moyens non prévus dans les groupes ou par des moyens acoustiques
• G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné

Abrégé

TTFF) of formation of the carbon layer.

Classes IPC  ?

• C30B 29/36 - Carbures
• C30B 33/02 - Traitement thermique
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

Abrégé

An assembly of non-volatile resistive memories associated with a selector, includes a selector layer and an upper electrode; a first memory stack including a first active layer, extending against a part of a lateral surface of the upper electrode; a second memory stack including a second active layer, extending against another part of the lateral surface of the upper electrode; the upper electrode being common to the first and the second memory stack.

Classes IPC  ?

• H10B 63/00 - Dispositifs de mémoire par changement de résistance, p. ex. dispositifs RAM résistifs [ReRAM]
• H10N 70/00 - Dispositifs à l’état solide n’ayant pas de barrières de potentiel, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
• H10N 70/20 - Dispositifs de commutation multistables, p. ex. memristors

Abrégé

A device for estimating a position of a radioactive source, comprising: a holder; and at least two radiation detectors configured to generate a detection signal, the device being such that, each detector being assigned a position, the detectors are placed around an iso-centroid of each position, i.e., a centroid of each position equally weighted. The device also includes processing circuitry configured to compute a centroid of each position weighted by the detection signal measured by each detector; and depending on the centroid, estimate a direction pointing toward the source, corresponding to a direction between the device and the source.

Classes IPC  ?

• G01S 3/78 - Radiogoniomètres pour déterminer la direction d'où proviennent des ondes infrasonores, sonores, ultrasonores ou électromagnétiques ou des émissions de particules sans caractéristiques de direction utilisant des ondes électromagnétiques autres que les ondes radio
• G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
• G01T 7/00 - Détails des instruments de mesure des radiations

Abrégé

A gas-phase analytical system including an injection unit configured to inject a sample to be analyzed including at least one chemical compound, a unit for introducing a stream of carrier gas, a transport column, and a detection device, the chemical compound(s) being entrained by the gas into the column up to the device. The device is an optical detector including at least one Mach-Zehnder interferometric sensor supplied by an optical source and integrated into a microfluidic structure, the sensor comprising a sensing arm exposed to the chemical compound(s) and a reference arm impermeable to the chemical compound(s), the sensor(s) being designed to optically detect the passage of the chemical compound(s) through the sensing arm.

Classes IPC  ?

• G01N 30/74 - Détecteurs optiques
• B01D 53/02 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse
• G01N 30/02 - Chromatographie sur colonne

Abrégé

Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The invention relates to a method for manufacturing an electric current sensor (SHE) comprising the following steps: a) providing a metal or metal alloy substrate (SBT), b) making a non-through cavity (CVT) in said substrate so that said cavity separates the substrate into two areas (Z1, Z2), c) producing a resistive element (ER) in said cavity (CVT) by additive manufacturing, d) annealing the resulting assembly, e) removing a part of the substrate (SBT) to leave only the resistive element (ER) between the two areas (Z1, Z2) of the substrate, and f) defining, within each area (Z1, Z2), a connection terminal (BCE1, BCE2) to obtain electrodes (PEL, DEL).

Classes IPC  ?

• G01R 1/04 - BoîtiersOrganes de supportAgencements des bornes
• B33Y 10/00 - Procédés de fabrication additive
• B33Y 80/00 - Produits obtenus par fabrication additive
• G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriquesCombinaisons structurelles de ces éléments avec ces appareils

Abrégé

An array of at least two photodiodes, wherein each photodiode includes an absorption region and a capture region, the capture region including an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, in which each absorption region is separated from the other absorption regions, and wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The invention relates to a method for determining an electrical parameter of a tandem photovoltaic cell (12) comprising a first sub-cell (22) including a layer (24) of a first semiconductor material, and a second sub-cell (26) including a layer (28) of a second semiconductor material, the first sub-cell being above the second, the second semiconductor material having an optical bandgap different from that of the first. The method is implemented by an electronic determination device (20) and comprises acquiring, via a measuring device (16), at least two sets of N luminescence values for the cell, each acquired set resulting from a respective continuous excitation signal, N≥1; and computing a set of N values of the electrical parameter from the acquired sets of N luminescence values. The method makes it possible to characterize the cell with a two-dimensional resolution, and to carry out two-dimensional mapping of the cell.

Classes IPC  ?

• H02S 50/10 - Tests de dispositifs PV, p. ex. de modules PV ou de cellules PV individuelles

Abrégé

A photoacoustic detecting device to be applied, via a contact face, against a medium to be analyzed, the device comprising: a hollow cavity; a light source that is pulsed or amplitude-modulated; an acoustic detector configured to detect an acoustic wave extending through the cavity, the device further comprises an interface membrane, forming the contact face, the interface membrane being configured to: form an interface between the gas, filling the cavity, and the medium to be analyzed; block passage of a liquid or gel between the medium to be analyzed and the cavity; and generate an acoustic pressure wave inside the cavity, under the effect of a variation in the temperature of the interface membrane, the temperature variation of the interface membrane being induced by heating of the medium resulting from illumination of the medium.

Classes IPC  ?

• G01N 29/24 - Sondes
• G01N 29/02 - Analyse de fluides

Abrégé

A control unit of an SRAM memory for triggering an initialisation, selected from different possible distinct initialisation types, of at least one given group of SRAM memory cells of the SRAM memory, the control unit configured to adopt a “locked” operating mode, in which it triggers an initialisation of the given group of cells according to a “default” initialisation type corresponding to a first initialisation type from the different distinct initialisation types or an erasing, and holds at the output the “hard masking” command signal in the same given state as long as a particular so-called “unlocking” signal sequence is not received on the hard masking inputs, the control unit being further configured, subsequently to the reception of the particular so-called “unlocking” signal sequence, to enable the initialisation of the given group according to different initialisation types which may be distinct from the default initialisation.

Classes IPC  ?

• G11C 11/412 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules avec réaction positive, c.-à-d. des cellules ne nécessitant pas de rafraîchissement ou de régénération de la charge, p. ex. multivibrateur bistable, déclencheur de Schmitt utilisant uniquement des transistors à effet de champ
• G11C 5/14 - Dispositions pour l'alimentation
• G11C 11/417 - Circuits auxiliaires, p. ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture, la synchronisation ou la réduction de la consommation pour des cellules de mémoire du type à effet de champ

Abrégé

The invention relates to a method for producing a two-dimensional material (10), comprising the following steps: - growing the two-dimensional material (10) on a surface (20s) of a growth substrate (20) such that the two-dimensional material is bonded to said surface by van der Waals forces, said surface consisting of a first material having a first relative permittivity; - providing a target substrate (30) having a surface (30s) consisting at least in part of a second material having a second relative permittivity strictly greater than the first relative permittivity; - assembling (S2) the growth substrate (20) and the target substrate (30) by direct adhesive bonding between the two-dimensional material (10) and the second material; and - separating the growth substrate (20) and the target substrate (30), whereby at least one part of the two-dimensional material (10) detaches from the growth substrate and remains adhesively bonded to the target substrate.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

Abrégé

The invention deals with the crucial issue of obtaining reliable measurement of the fetus's physiological values during labour. For this, the inventors has found that maintaining a good position of the probe during measurement is very important and has developed a specific contact surface for the probe with a principal portion surrounded by two lateral wings. This drastically improves the quality of the measurement, resulting in a better prevention of hypoxia.

Classes IPC  ?

• A61B 5/291 - Électrodes bioélectriques à cet effet spécialement adaptées à des utilisations particulières pour l’électroencéphalographie [EEG]
• A61B 5/369 - Électroencéphalographie [EEG]
• A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus

Abrégé

The invention relates to a vacuum evaporation deposition device (30) comprising: - a deposition housing or enclosure; - a deposition support (32); - evaporation means (36) for evaporating a material towards the deposition substrate (32); - reactive gas injection means (41) for injecting a reactive gas into the chamber; - means forming a cover (2) around the deposition substrate, extending from the deposition support, the axis XX' forming an axis of rotational symmetry perpendicular to the surface of the deposition support and centred thereon, the reactive gas injection means (41) comprising a duct provided with a plurality of openings for injecting a reactive gas with an initial momentum distribution that is rotationally symmetrical about the axis XX'.

Classes IPC  ?

• C23C 14/24 - Évaporation sous vide
• C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
• C23C 14/08 - Oxydes
• C23C 14/54 - Commande ou régulation du processus de revêtement
• C23C 14/14 - Matériau métallique, bore ou silicium
• C23C 14/50 - Porte-substrat
• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
• C23C 14/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques

Abrégé

An electronic chip including a support and connection pillars, each connection pillar including a trunk including an end portion and an intermediate portion coupling the end portion to the support, and including a collar at the junction between the end portion and the intermediate portion.

Classes IPC  ?

• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

A heat exchanger has first and second heat-exchange modules including first and second fluid-circulation systems, partition plates sandwiched between first and second heat-exchange modules and each fluidically disconnecting the first and second fluid-circulation systems from one another. At least one of the heat-exchange modules includes a stack of shaped plates superposed along a longitudinal axis, and each consisting of at least one hollowed-out zone passing through it and of a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being defined by the hollowed-out zones of the stack and extending between the adjacent partition plates, at least part of the hollowed-out zone of one of the shaped plates being superposed with a solid zone of another shaped plate adjacent to it, and vice versa.

Classes IPC  ?

• F24H 9/14 - Raccordement de sections différentes, p. ex. dans les chauffe-eau

Abrégé

A heat exchanger including: first and second heat-exchange modules comprising fluid-circulation systems, partition plates which fluidically disconnect adjacent fluid-circulation systems, at least one of the heat-exchange modules including: a frame plate of constant thickness, including a through-aperture, and an insert fully housed in the aperture and of a thickness equal to the thickness of the frame plate, and consisting of a single shaped plate or a plurality of shaped plates forming a stack and each consisting of at least one hollowed-out zone passing through it and a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being formed in the hollowed-out zone of the single plate or of each plate of the stack and bounded by the surrounding solid zone or zones and by the adjacent partition plates.

Classes IPC  ?

• F28F 3/08 - Éléments construits pour être empilés, p. ex. pouvant être séparés pour leur nettoyage

Abrégé

A process for producing a layer of organic-inorganic hybrid perovskite material including the following steps: a) Forming of a layer comprising the inorganic precursors of perovskite material on a substrate by CSS or CSVTD, b) Implementation of a CSS or CSVTD step from organic precursors the organic precursors with the layer of inorganic precursors and a layer of organic-inorganic hybrid perovskite material is obtained.

Classes IPC  ?

• H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
• C07F 19/00 - Composés métalliques couverts par plus d'un des groupes principaux
• H10K 30/30 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs
• H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
• H10K 30/50 - Dispositifs photovoltaïques [PV]
• H10K 85/50 - Pérovskites organiquesPérovskites hybrides organiques-inorganiques [HOIP], p. ex. CH3NH3PbI3

Abrégé

xyy is deposited on the surface of the substrate, where metal silicide M is a transition metal, x is an integer selected from the group consisting of 1, 2, 3, 4 and 5, and y is an integer selected from the group consisting of 1, 2, 3 and 4; b) depositing a mixture comprising an organic resin, preferably a furan or phenolic resin, and a metal silicon powder, on the surface of the substrate obtained at the end of step a), by means of which, at the end of step b), a composite material is obtained that comprises an ultra-high temperature ceramic matrix reinforced with carbon fibres.

Classes IPC  ?

• C04B 41/00 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiquesTraitement de la pierre naturelle
• C04B 41/45 - Revêtement ou imprégnation
• C04B 41/52 - Revêtement ou imprégnation multiple
• C04B 41/89 - Revêtement ou imprégnation pour obtenir au moins deux revêtements superposés de compositions différentes
• C04B 111/00 - Fonction, propriétés ou utilisation des mortiers, du béton ou de la pierre artificielle

Produits et services

Logiciels; logiciels enregistrés; logiciels d’applications; applications logicielles téléchargeables; logiciels d'application téléchargeables pour des environnements virtuels; plateformes logicielles, enregistrées ou téléchargeables; programmes informatiques enregistrés; programmes informatiques téléchargeables; tous ces produits étant exclusivement destinés à un usage dans le domaine de la cybersécurité et de la sécurité des systèmes d’information et des outils de communication. Conception et développement de logiciels; fourniture de logiciels non téléchargeables en ligne; location de logiciels et de programmes informatiques; logiciels en tant que service [SaaS]; programmation de programmes de sécurité Internet; sécurité, protection et restauration des technologies de l'information; consultation en matière de sécurité informatique; conseils en matière de sécurité de réseaux de télécommunications; tous ces services étant exclusivement fournis dans le domaine de la cybersécurité et de la sécurité des systèmes d’information et des outils de communication.

Abrégé

A method of porosification of a structure including a base substrate covered with (Al,In,Ga)N/(Al,In,Ga)N mesas, including a porosification step during which the (Al,In,Ga)N/(Al,In,Ga)N mesas are electrochemically porosified, during the porosification step, the structure further comprises, between the mesas or between groups of mesas, electrically-conductive lines covered with an electrically-insulating element.

Classes IPC  ?

• H01L 33/16 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure cristalline ou une orientation particulière, p.ex. polycristalline, amorphe ou poreuse
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
• H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote

Abrégé

A method for passivating photovoltaic cells includes providing a plurality of photovoltaic cells, each cell including a front face, a rear face and a peripheral edge connecting the front and rear faces, on each cell, forming an insulation element shaped along the perimeter of the cell, the insulation element being formed on the front or rear face, stacking the plurality of cells, the insulation element being positioned between two adjacent cells so that the face of the cell provided with the insulation element is positioned at a distance from the face facing the adjacent cell, and depositing a passivation layer onto the peripheral edge of the cells by injecting a passivation species, the insulation element forming a penetration barrier to the passivation species so that the passivation layer covers the peripheral edge of the cells.

Classes IPC  ?

• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

A process for producing an organic-inorganic perovskite layer including the following steps: Forming of a layer of inorganic precursors on a substrate, Implementation of a step of close space sublimation from a powder including the organic precursors, whereby the vapors from the layer of organic precursors react with the layer of inorganic precursors and a hybrid organic-inorganic perovskite layer is formed, the powder of organic precursors being obtained by mechanosynthesis by co-grinding at least a first group of particles of a first material and a second group of particles of a second material to form a third group of particles of a third material, the third group of particles forming the powder of organic precursors.

Classes IPC  ?

• H10K 85/50 - Pérovskites organiquesPérovskites hybrides organiques-inorganiques [HOIP], p. ex. CH3NH3PbI3
• C07F 7/24 - Composés du plomb
• C23C 8/34 - Traitement par plusieurs éléments en plusieurs étapes
• H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
• H10K 30/57 - Dispositifs photovoltaïques [PV] comprenant des jonctions multiples, p. ex. des cellules PV en tandem
• H10K 71/10 - Dépôt d'une matière active organique

Abrégé

A heat exchanger includes first and second modules having first and second systems for circulating first and second fluids respectively, the first fluid comprising different first and second fluid components, partition plates in contact with the adjacent modules and each fluidically disconnecting the first and second circulation systems from one another. Each of the second modules includes a third circulation system, fluidically disconnected from the second circulation system, the first and third circulation systems being fluidically connected through the partition plate. The exchanger introduces a change in phase of the second component by exchanging heat between the first and second fluids and directing the first and second components out of the exchanger through the first and third circulation systems.

Classes IPC  ?

• F28D 9/00 - Appareils échangeurs de chaleur comportant des ensembles de canalisations fixes en forme de plaques ou de laminés pour les deux sources de potentiel calorifique, ces sources étant en contact chacune avec un côté de la paroi d'une canalisation

Abrégé

The invention relates to a system for reducing or optimising the electricity consumption or generation of a fluid device with at least one rotating component, the system comprising: - at least one electrical sensor (2) with electrodes (100) distributed around a body of the device, wherein their ends are flush with the inner surface of the body and face the component; - an electronic circuit (12) for controlling the electrodes and performing electrical impedance tomography measurements; - a signal processing unit suitable for reconstructing images of the fluid in the body from matrix measurements; - an electronic unit for automatically controlling the control member of the device suitable for modifying the operating frequency of the device so as to adjust its electrical power and, consequently, its flow-to-power ratio.

Classes IPC  ?

• F01D 21/00 - Arrêt des "machines" ou machines motrices, p. ex. dispositifs d'urgenceDispositifs de régulation, de commande ou de sécurité non prévus ailleurs
• F04D 15/00 - Commande, p. ex. régulation de pompes, d'installations ou de systèmes de pompage
• F04D 27/00 - Commande, p. ex. régulation, des pompes, des installations ou des systèmes de pompage spécialement adaptés aux fluides compressibles
• F04D 29/66 - Lutte contre la cavitation, les tourbillons, le bruit, les vibrations ou phénomènes analoguesÉquilibrage

Abrégé

The invention essentially consists of a system for detecting a or more than one defect liable to result in malfunction, or even breakage, of fluidic equipment installed in a fluidic circuit. The system comprises an electric sensor that has electrodes distributed, preferably regularly, around a section upstream of the equipment and with their ends flush with the internal wall of the section. Electrical impedance tomography (EIT) measurements are carried out using signals that are either trigonometric, or per pair of electrodes, employed simultaneously to excite all the electrodes or sequentially on a sub-set of electrodes. This measurement makes it possible, in a non-invasive and non-destructive manner, to view, in real time and continuously, the interior of the section and therefore of the fluid flowing therein, by measuring electrical properties (electrical current and potential).

Classes IPC  ?

• G01F 1/64 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets électriques ou magnétiques en mesurant des courants électriques passant à travers l’écoulement de fluideMesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets électriques ou magnétiques en mesurant le potentiel électrique produit par l’écoulement de fluide, p. ex. par effet électrochimique, effet de contact ou effet de frottement
• F04D 15/00 - Commande, p. ex. régulation de pompes, d'installations ou de systèmes de pompage
• F04B 51/00 - Tests des "machines", pompes ou installations de pompage
• G01F 15/00 - Détails des appareils des groupes ou accessoires pour ces derniers, dans la mesure où de tels accessoires ou détails ne sont pas adaptés à ces types particuliers d'appareils, p. ex. pour l'indication à distance
• G01M 3/40 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation de moyens électriques, p. ex. par observation de décharges électriques
• G01N 27/20 - Recherche de la présence de criques

Abrégé

Un ensemble de distribution de gaz comprend une premiere plaque (20) et une seconde plaque (12) paralleles I’une a I’autre, la premiere plaque (20) comprenant des orifices de communication (21, 22, 23, 24) de gaz. Un dispositif d’interface d’etancheite (40) comporte des joints d’etancheite (41, 42, 43, 44) dispose autour des orifices de communication (21, 22, 23, 24) et une entretoise (50) disposee dans un plan de couplage entre les premiere et seconde plaques (20, 12). L’entretoise (50) et les joints d’etancheite (41, 42, 43, 44) torment une interface d’etancheite ayant deux plans de symetrie perpendiculaires entre eux et perpendiculaires au plan de couplage, I’epaisseur des joints d’etancheite (41, 42, 43, 44) avant couplage sous pression des premiere et seconde plaques (20, 12) etant superieure a I’epaisseur de l’entretoise (50). Utilisation pour un electrolyseur ou une pile a combustible a oxydes solides a haute temperature.

Classes IPC  ?

• C25B 9/73 - Assemblages comprenant plusieurs cellules du type filtre-presse
• H01M 8/0273 - Moyens d’étanchéité ou de support autour des électrodes, des matrices ou des membranes avec des moyens d’étanchéité ou de support sous forme d’un cadre
• H01M 8/2432 - Groupement d'éléments élémentaires de forme plane
• H01M 8/247 - Dispositions pour serrer un empilement, pour l’aménagement d’un empilement dans un boîtier ou pour assembler plusieurs boîtiers
• H01M 8/2483 - Détails des groupements d'éléments à combustible caractérisés par les collecteurs d’admission internes

Abrégé

The invention relates to a frequency-modulated, continuously transmitting radar measurement device including a generator configured to generate N first periodic radar signals, the frequency of each of said first periodic radar signals varies linearly as a function of time, in a frequency band B, over sections Tx of a part Ttrame of a period T, the frequencies of said first periodic radar signals being different from one another at each time instant of the part Ttrame; N transmit antennas; M receive antennas, each receive antenna being configured to receive a signal including echoes of the first periodic radar signals; a receive circuit configured to calculate, from the M signals, a range and/or a radial velocity and/or an angle, associated with a reflector detected by the radar measurement device.

Classes IPC  ?

• G01S 7/35 - Détails de systèmes non impulsionnels
• G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement

Abrégé

The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Classes IPC  ?

• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A method for passivating photovoltaic cells includes providing a plurality of cells, each cell including a front face, a rear face and a peripheral edge, each cell being provided with a plurality of first tracks and a plurality of second tracks being parallel, stacking the cells, the plurality of first tracks and the plurality of second tracks of each cell being positioned between the cell concerned and an adjacent cell, and depositing a passivation layer onto the peripheral edge of the cells by injecting a passivation species, the plurality of first tracks and the plurality of second tracks forming a penetration barrier to the passivation species.

Classes IPC  ?

• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV

Abrégé

A method for etching at least a portion of a layer based on a III-N material includes exposing a least one portion of an upper face of the III-N layer to a plasma treatment with bias voltage pulsing based on chlorine, wherein the plasma treatment is configured to present a duty cycle comprised between 20% and 80%. A first non-zero polarization bias is applied to the substrate during Ton, and a second polarization bias lesser than the first non-zero polarization bias or no polarization bias is applied, during Toff, so as to etch the portion of the III-N layer. The duration of the etching is significantly reduced to obtain a satisfying quality of the III-N layer for the operation of a microelectronic device, such as a transistor or a diode.

Classes IPC  ?

• H01J 37/32 - Tubes à décharge en atmosphère gazeuse
• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs

Abrégé

22, a base and a catalyst. The method of the invention falls within a circularity approach to boron, enabling recycling of (pseudo-)haloborane compounds, which are a waste commonly encountered in boron chemistry, to hydroboranes with higher added values.

Classes IPC  ?

• C07F 5/02 - Composés du bore

Abrégé

The invention relates to a composite material which is provided in the form of porous beads with an open porosity, each bead comprising a plurality of porous carbon-based particles, bound together by an organic polymer, and which is characterised in that at least one organic ligand of uranium(VI) is deposited non-covalently in the pores of the beads. The invention also relates to a method for preparing this material and to the use thereof for extracting uranium(VI) from an aqueous solution comprising sulphuric acid. The invention can be used in the treatment of uranium ores with a view to recovering the uranium contained in these ores.

Classes IPC  ?

• B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone libreCompositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
• B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
• B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
• B01J 20/32 - Imprégnation ou revêtement
• C22B 60/02 - Obtention du thorium, de l'uranium ou des autres actinides
• C02F 1/28 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par absorption ou adsorption
• G21F 9/12 - Traitements par absorptionTraitements par adsorptionTraitements par échange d'ions
• C02F 101/00 - Nature du contaminant
• C01B 32/182 - Graphène
• C01B 32/198 - Oxyde de graphène
• C01B 32/20 - Graphite

Abrégé

A multispectral filter for electromagnetic radiation, the filter including at least two-colour filters, each colour filter including: a metal grating including metal patterns repeated according to a given period, each metal pattern being spaced apart from an adjacent metal pattern by a given non-zero spacing; a continuous reflective layer; a pattern of dielectric material of Fabry-Perot cavity between the metal grating and the continuous reflective layer; the thickness of the patterns of dielectric material of the two-colour filters being different.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images
• H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques

Abrégé

A device for holding a photovoltaic cell to form a passivation layer on the photovoltaic cell, the photovoltaic cell including a first face, a second face and a peripheral edge connecting the first face and the second face, the device including a first support part including a first support face and a second support face, the first support face being provided with a first seal shaped according to a perimeter of the photovoltaic cell, a second support part including a third support face and a fourth support face, the third support face being provided with a second seal shaped according to the perimeter of the photovoltaic cell, and a compression device configured to hold the photovoltaic cell bearing tightly against the first seal and against the second seal.

Classes IPC  ?

• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• C23C 8/06 - Diffusion à l'état solide uniquement d'éléments non métalliques dans la couche superficielle de matériaux métalliquesTraitement chimique de surface par réaction entre le matériau métallique de la surface et un gaz réactif, laissant dans le revêtement des produits de la réaction, p. ex. revêtement de conversion, passivation des métaux au moyen de gaz

Abrégé

The invention relates to an interconnection structure (5) for a set of solar cells, the structure being formed of an oblong conductive element (11) and insulating strips arranged on either side of the oblong conductive element, a first insulating strip (20) comprising first holes (21), and a second insulating strip (30) comprising second holes (31), wherein the oblong conductive element (11) is provided with a series of conductive folds (12a, 12b), including one or more first conductive folds (12a) that respectively pass through one or more first holes (21) in the first insulating strip (20) and are capable of being connected to a first solar solar cell, and one or more second conductive folds that respectively pass through one or more second holes (31) in the second insulating strip (30) and are able to be connected to a conductive track or to a second solar cell of the set of solar cells.

Classes IPC  ?

• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV

Abrégé

The invention relates to a method for producing a highly textured magnet comprising the following steps: a) providing: -a 1st21414B, - a 2nd21414B, b) subjecting the 2ndpowder to a hydrogenation-disproportionation treatment, c) mixing the 1stpowder with the 2nd powder obtained at the end of step b), d) subjecting the mixture obtained at the end of step c) to a magnetic field, e) subjecting the mixture obtained at the end of step d) to a compacting step so as to obtain a compacted part, f) subjecting the compacted part obtained at the end of step e) to a sintering step so as to obtain a magnet.

Classes IPC  ?

• H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
• H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants

Abrégé

The invention relates to a method for producing a highly coercive magnet, the method comprising the following steps: a) providing: - a 1st21414B magnetic phase; - a 2nd21414B magnetic phase; b) the 2ndpowder is subjected to a hydrogenation-disproportionation treatment; c) the 1stpowder is mixed with the 2nd powder obtained at the end of step b); d) the mixture obtained at the end of step c) is subjected to a compacting step so as to obtain a compacted part; e) the compacted part obtained at the end of step d) is subjected to a presintering step; f) the presintered part obtained at the end of step e) is subjected to a sintering step.

Classes IPC  ?

• H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
• H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants

Produits et services

Matériaux de construction métalliques; Alliages de nickel résistants à la corrosion pour la construction et le revêtement; Alliages de nickel à durcissement structural destinés aux structures exposées à des températures élevées; Revêtements en alliage de nickel pour la protection contre la corrosion causée par les sels fondus. Services de fabrication et de traitement d’alliages métalliques; Services de fonderie et de forge d’alliages métalliques; fabrication additive par laser et autres techniques de fabrication additive pour la production de pièces en alliages de nickel. Recherche et développement dans le domaine des matériaux résistants à la corrosion; Recherche et développement d'alliages métalliques à base de nickel; Études et analyses de matériaux pour applications en environnements hautement corrosifs; Services d'ingénierie; Conception et développement de structures et de pièces en alliages métalliques; Conseil en ingénierie pour la sélection et l'application d'alliages métalliques résistants à la corrosion; Conception et optimisation de pièces et structures pour une résistance maximale aux environnements corrosifs.

Abrégé

An assembly includes at least two selectors arranged electrically in parallel to one another and each being electrically connected in series to a memory layer forming at least two distinct non-volatile resistive memories each associated, respectively, with one of the two selectors, the assembly including two upper electrodes which both extend over the memory layer and which are electrically insulated from each other, one of the selectors extending against a lateral surface of the first upper electrode and another of the selectors extending against a lateral surface of the second upper electrode.

Classes IPC  ?

• H10N 70/20 - Dispositifs de commutation multistables, p. ex. memristors
• H10B 63/00 - Dispositifs de mémoire par changement de résistance, p. ex. dispositifs RAM résistifs [ReRAM]
• H10N 70/00 - Dispositifs à l’état solide n’ayant pas de barrières de potentiel, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation

Abrégé

The present disclosure relates to a pixel circuit of an image sensor, the pixel circuit comprising: a pinned photodiode (PD) coupled to a sense node (SN); a comparator (104) configured: to compare, during a first read phase, a first sense node voltage (Vpix) at the sense node (SN) with a first voltage ramp (V_RAMP) and to generate an output signal (WRITE) if the voltage of the first voltage ramp (V_RAMP) crosses the first sense node voltage (Vpix); and, otherwise, to compare, during a second read phase, a second sense node voltage (Vpix) at the sense node (SN) with a second voltage ramp (V_RAMP) and to generate an output signal (WRITE); and a memory (108) configured to receive a digital ramp (DATA_RAMP), and to store, in response to the output signal (WRITE) of the comparator (104), a value of the digital ramp (DATA_RAMP) to form pixel data (DATA_PIX).

Classes IPC  ?

• H04N 25/581 - Commande de la gamme dynamique impliquant plusieurs expositions acquises simultanément
• H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
• H04N 25/707 - Pixels pour la détection d’événements
• H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F

Abrégé

A method for obtaining and processing an image acquired by a gamma camera, the gamma camera comprising a detector configured to detect X-ray or gamma-ray photons emitted in a field of observation of the gamma camera, in order to obtain a reconstructed image. The reconstructed image corresponds to a position of radiation sources in the field of observation, the reconstructed image being liable to contain multiple regions of interest corresponding to hotspots. The method comprises selecting a region of interest so as to determine a probability of the hotspot being present in the selected region of interest.

Classes IPC  ?

• G06T 11/00 - Génération d'images bidimensionnelles [2D]

Abrégé

The invention is based on a method for processing an X-ray and gamma-ray radiation spectrum acquired by a spectrometry device (1). The processing method takes into consideration a spectral dispersion matrix (D). The spectral dispersion matrix models the energy response of the device. The method comprises establishing a transfer matrix (U,U′,D′), using the spectral dispersion matrix. The transfer matrix is then used to establish a direct model, linking measured variables, forming an input vector (m), and variables to be estimated, forming an output vector. The invention of the direct model allows the output vector (a,s,h,ε) to be estimated. The invention may be applied to quantifying the activity of an object to be inspected or to performing an energy or efficiency calibration of the spectrometry device. FIG. 2B.

Classes IPC  ?

• G01T 1/36 - Mesure de la distribution spectrale des rayons X ou d'une radiation nucléaire

Abrégé

A stack of SOEC/SOFC solid oxide cells includes a plurality of stacked plates and two guiding elements ensuring that the vertical stacking of at least some of the plates is guided, each plate having two guiding orifices. In a cross-sectional view, the guiding orifices are aligned in a first horizontal direction and are spaced apart by a smaller inter-orifice distance, the guiding elements being spaced apart by a greater smaller inter-element distance and the difference corresponding to the identical inner clearance for the two guiding orifices. The guiding orifices are spaced apart by a larger inter-orifice distance and the guiding elements are spaced apart by a shorter larger inter-element distance, the difference corresponding to the outer clearance, which is greater than the inner clearance.

Classes IPC  ?

• H01M 8/2432 - Groupement d'éléments élémentaires de forme plane
• C25B 9/77 - Assemblages comprenant plusieurs cellules du type filtre-presse avec diaphragmes
• C25B 13/02 - DiaphragmesÉléments d'espacement caractérisés par la configuration ou la forme
• H01M 8/0256 - Trous d’interconnexion, c.-à-d. connecteurs passant à travers le matériau du séparateur
• H01M 8/12 - Éléments à combustible avec électrolytes solides fonctionnant à haute température, p. ex. avec un électrolyte en ZrO2 stabilisé
• H01M 8/2404 - Procédés ou appareillages pour le groupement d’éléments à combustible

Abrégé

An image sensor including a plurality of pixels, each pixel including a non-pinned photodiode connected, by a metal connecting element, to a pinned region formed in a first semiconductor substrate.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

An assembly includes at least two non-volatile resistive memories arranged electrically in parallel to one another and each being electrically connected in series to a selector layer respectively forming at least two selectors, each one assigned to one of the memories, the assembly including two upper electrodes which both extend over the selector layer and which are electrically insulated from each other, one of the resistive memories extending against a lateral surface of the first upper electrode and another of the resistive memories extending against a lateral surface of the second upper electrode.

Classes IPC  ?

• H10N 70/20 - Dispositifs de commutation multistables, p. ex. memristors
• H10B 63/00 - Dispositifs de mémoire par changement de résistance, p. ex. dispositifs RAM résistifs [ReRAM]
• H10N 70/00 - Dispositifs à l’état solide n’ayant pas de barrières de potentiel, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation

Abrégé

A pixel circuit of an image sensor comprises a pinned photodiode (PD) coupled to a sense node (SN); a comparator (104) configured: to compare, during a first read phase, a first sense node voltage (Vpix) at the sense node (SN) with a first voltage ramp (V_RAMP) and to generate an event signal (EVENT) if the voltage of the first voltage ramp (V_RAMP) crosses the first sense node voltage (Vpix); and otherwise, to compare, during a second read phase, a second sense node voltage (Vpix) at the sense node (SN), with a second voltage ramp (V_RAMP) and to generate an event signal (EVENT) when the voltage of the second voltage ramp (V_RAMP) crosses the second sense node voltage (Vpix); and an event signaling circuit (1102) configured to signal the generation of the event signal during the first or second read phase to event logging circuitry.

Classes IPC  ?

• H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
• H04N 25/59 - Commande de la gamme dynamique en commandant la quantité de charge stockable dans le pixel, p. ex. en modifiant le rapport de conversion de charge de la capacité du nœud flottant
• H04N 25/707 - Pixels pour la détection d’événements
• H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F

Abrégé

A method for manufacturing a porous monolith includes: forming a sol including a sol-gel precursor in aqueous solution; at least partially filling with previously formed sol an enclosure and at least one mould contained in the enclosure, the mould including at least one opening into the sol after filling; forming a sol-gel matrix in the enclosure from the sol; removing the mould with the sol-gel matrix contained in the mould from the enclosure; and forming a porous monolith from the sol-gel matrix contained in the mould, wherein the formation of the sol, the sol-gel matrix, and the porous monolith is performed by a sol-gel process.

Classes IPC  ?

• B01J 20/10 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant de la silice ou un silicate
• B01D 15/10 - Adsorption sélective, p. ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement
• B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
• B01J 20/283 - Absorbants ou adsorbants poreux à base de silice
• B01J 20/30 - Procédés de préparation, de régénération ou de réactivation

Abrégé

The invention is a method for processing a calibration spectrum acquired by a spectrometric detector of X or gamma photons. The method comprises a taking into account of a parametric form of a calibration function, the calibration function linking the rank of an energy channel to an energy value. The method comprises a confrontation between the channels of the peaks of the calibration spectrum and emission energies of calibration isotopes. The confrontation makes it possible to define the values of the parameters of the calibration function.

Classes IPC  ?

• G01J 3/28 - Étude du spectre

Abrégé

An assembly includes a stack of SOEC/SOFC solid oxide cells, the stack having a plurality of plates stacked one on top of the other, each plate having an outer lateral surface, the plurality of plates including at least a plurality of electrochemical cells, a plurality of interconnectors, and upper and lower end plates. At least two guiding elements are configured to guide the vertical stacking of at least some of the plates of the stack. The at least two guiding elements extend vertically in a vertical direction and bear against the outer lateral surface of each of the at least some of the plates.

Classes IPC  ?

• H01M 8/248 - Moyens pour comprimer les empilements d’éléments à combustible
• C25B 9/77 - Assemblages comprenant plusieurs cellules du type filtre-presse avec diaphragmes
• C25B 13/02 - DiaphragmesÉléments d'espacement caractérisés par la configuration ou la forme
• H01M 8/0256 - Trous d’interconnexion, c.-à-d. connecteurs passant à travers le matériau du séparateur
• H01M 8/12 - Éléments à combustible avec électrolytes solides fonctionnant à haute température, p. ex. avec un électrolyte en ZrO2 stabilisé
• H01M 8/2404 - Procédés ou appareillages pour le groupement d’éléments à combustible
• H01M 8/2432 - Groupement d'éléments élémentaires de forme plane

Abrégé

The present invention relates to new glycomimetic molecules which selectively bind to the L-SIGN receptor, finding application in the medical field and, in particular, in the prevention and treatment of viral infections, in the immunotherapy of liver tumors and in the treatment of immune diseases.

Classes IPC  ?

• C07H 19/056 - Radicaux triazole ou tétrazole
• A61K 31/7056 - Composés ayant des radicaux saccharide et des hétérocycles ayant l'azote comme hétéro-atome d'un cycle, p. ex. nucléosides, nucléotides contenant des cycles à cinq chaînons avec l'azote comme hétéro-atome d'un cycle
• A61K 31/7064 - Composés ayant des radicaux saccharide et des hétérocycles ayant l'azote comme hétéro-atome d'un cycle, p. ex. nucléosides, nucléotides contenant des cycles à six chaînons avec l'azote comme hétéro-atome d'un cycle contenant des pyrimidines condensées ou non-condensées

Abrégé

A method comprising the following steps: a) bonding a handle substrate including a base and raised elements to a substrate of interest including a support substrate covered with a thin film, the thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with the raised elements, b) performing an etching with the etchant to remove the material sensitive to the etchant present in the first areas, the second areas being protected during the etching, whereby the thin film is structured in the form of raised patterns, c) separating the handle substrate from the substrate of interest.

Classes IPC  ?

• H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
• H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension

Abrégé

A pixel including a first node, a second node configured to receive a first DC potential, and a plurality of acquisition channels each including: a photodiode adapted to detect radiation in a first wavelength range; a capacitive element coupling the photodiode to the first node; and a resistive element coupling a first terminal of the photodiode to the second node.

Classes IPC  ?

• H04N 25/60 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit
• H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs

Abrégé

A method for measuring relative concentrations of materials in a mixture includes providing an emission coil and at least one reception coil, providing a mixture with n materials having different magnetic susceptibilities, and introducing the mixture into the reception coil. Using a voltage generator the emission coil is supplied with at least one nonzero excitation frequency so as to generate an excitation magnetic field and the signal of the voltage induced in the reception coil is measured. Relative concentrations of the n materials are determined based on comparison between the overall susceptibility of the mixture as obtained through the voltage measurement and that of a reference mixture for which the relative concentrations of the n materials are known.

Classes IPC  ?

• G01N 27/72 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques

Abrégé

The present electronic generator of modulated subcarrier pulse signals includes a module (15) for modulating a pulse train, the position and amplitude of which are controllable, forming a switching signal (S3); a switching module (16), connected to the output of the module (15) for modulating a pulse train, including at least one transistor (22), controlled by said switching signal (S3), a voltage-controlled frequency-locking oscillator (18) having a frequency-locking band around a free oscillation frequency controlled by a control voltage, connected to the output of the switching module (16), the switching module making possible the injection of a periodic pulse signal (S4) having a frequency spectrum including at least one frequency line within said frequency locking band. Such arrangement makes it possible to obtain, at the output of the oscillator, frequency-controlled, phase-controlled and amplitude-controlled modulated subcarrier pulsed signals (S5).

Classes IPC  ?

• H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
• H04B 1/707 - Techniques d'étalement de spectre utilisant une modulation par séquence directe
• H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission

Abrégé

A circuit comprises first, second, and third nodes (2002, 2004, 2006) respectively receiving a reference potential, a first voltage, and a second voltage. A first NMOS transistor has its gate connected to the second node. A second NMOS transistor has its drain and its source respectively connected to the source of the first transistor and to the second node. A third NMOS transistor has its gate and its source respectively connected to the second and first nodes. A fourth PMOS transistor has its drain connected to the drain of the third transistor and to the gate of the second transistor, and its gate connected to the source of the first transistor. A resistive element connects the first transistor to the third node, another resistive element connecting the fourth transistor to the third node.

Classes IPC  ?

• H03K 17/22 - Modifications pour assurer un état initial prédéterminé quand la tension d'alimentation a été appliquée

Abrégé

A method for assembling a battery including providing an end plate having at least one through cell for an accumulator and at least one adhesive injection orifice distant from the cell, the adhesive injection orifice being in fluidic communication via a supply channel with a recess of an inner wall of the cell, placing the accumulator in the cell, injecting adhesive through the injection orifice, the adhesive flowing in the channel up to the recess, the accumulator being bonded to the end plate by the adhesive contained in the recess.

Classes IPC  ?

• H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p. ex. ronde ou elliptique
• H01M 50/20 - MonturesBoîtiers secondaires ou cadresBâtis, modules ou blocsDispositifs de suspensionAmortisseursDispositifs de transport ou de manutentionSupports

Abrégé

A method comprising the following steps: a) Bonding a handle substrate including raised elements to a substrate of interest including a support substrate covered with a thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with said elements, b) Placing into contact the obtained assembly with a solution including a hydrophobic agent, to cover the first areas with a hydrophobic film, c) Separating the two substrates, d) Placing into contact the substrate of interest with a solution containing the etchant, whereby the material sensitive to the etchant present in the second areas is etched and raised patterns are formed.

Classes IPC  ?

• H01L 21/321 - Post-traitement
• H01L 21/311 - Gravure des couches isolantes
• H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable