ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Petringa, Giada
Tudisco, Salvatore
Cirrone, Giuseppe Antonio Pablo
Abrégé
The invention relates to a detector of charged particles made of silicon carbide and capable of performing dosimetric measurements in the field of quality controls of the beam lines at proton-therapy centres. With such detector it is further possible to perform measurements on beams of high- intensity charged particles produced by laser-matter interaction.
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Maggioni, Gianluigi
De Salvador, Davide
Napoli, Daniel Ricardo
Napolitani, Enrico
Abrégé
A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 21/225 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p. ex. une couche d'oxyde dopée
4.
SYSTEM AND METHOD FOR REDUCING VIBRATIONS IN PRESSURE OSCILLATION SYSTEMS
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
D'Addabbo, Antonio
Abrégé
The present invention relates to a method and a device for reducing the vibration level in systems that produce vibrations, such as, for example, cryogenic systems that comprise at least two means for producing pressure oscillations (such as, rotary valves, pistons, or displacers), by using one device for controlling the simultaneous operation of the motors that drive said means. According to one embodiment, said claimed device is a motor drive specifically designed and optimized for controlling the operation of the motors that drive the at least two rotary valves of said system in a synchronized and coordinated manner. According to one particular embodiment, said system that produces vibrations is a cryogenic system formed of two or more pulse tube cryocoolers of the Gifford-McMahon type (GM- type PTC), and said device is configured for controlling the motors that drive the rotary valves underlying the operation of said two or more GM-type PTC cryocoolers. According to this particular embodiment, the claimed method allows to reduce the level of vibration noise produced inside said system by synchronizing the operation of the motors that drive the rotary valves of said at least two GM-type PTC cryocoolers that are equipped in the cryogenic system.
F25B 9/14 - Machines, installations ou systèmes à compression dans lesquels le fluide frigorigène est l'air ou un autre gaz à point d'ébullition peu élevé caractérisés par le cycle utilisé, p. ex. cycle de Stirling
F25B 49/02 - Disposition ou montage des dispositifs de commande ou de sécurité pour machines, installations ou systèmes du type à compression
ISTITUTO NAZIONALE DI FISICA NUCLEARE (I.N.F.N.) (Italie)
Inventeur(s)
Crescini, Nicolo'
Abrégé
The invention refers to a precision magnetometer for detecting magnetic fields parallel to a static field Bo in which the magnetometer itself is immersed; this magnetometer is operative in the frequency range of the field bi ranging from 10 MHz to 1 GHz. Another object of the invention is the technique for using the presented magnetometer.
G01R 33/032 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs magnéto-optiques, p. ex. par effet Faraday
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/24 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/60 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique utilisant la résonance paramagnétique électronique
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
UNIVERSITÀ DEGLI STUDI DI PADOVA (Italie)
Inventeur(s)
Maggioni, Gianluigi
De Salvador, Davide
Napoli, Daniel Ricardo
Napolitani, Enrico
Abrégé
A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
H01L 21/225 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p. ex. une couche d'oxyde dopée
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/117 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire du type détecteurs de rayonnement à effet de volume, p.ex. détecteurs PIN en Ge compensés au Li pour rayons gamma
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Petringa, Giada
Tudisco, Salvatore
Cirrone, Giuseppe Antonio Pablo
Abrégé
The invention relates to a detector of charged particles made of silicon carbide and capable of performing dosimetric measurements in the field of quality controls of the beam lines at proton-therapy centres. With such detector it is further possible to perform measurements on beams of high- intensity charged particles produced by laser-matter interaction.
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
8.
Integrated sensor of ionizing radiation and ionizing particles
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
LFOUNDRY SRL (Italie)
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Rivetti, Angelo
Pancheri, Lucio
Giubilato, Piero
Da Rocha Rolo, Manuel Dionisio
Margutti, Giovanni
Di Cola, Onorato
Abrégé
This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.
H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire
H01L 31/117 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire du type détecteurs de rayonnement à effet de volume, p.ex. détecteurs PIN en Ge compensés au Li pour rayons gamma
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Cirrone, Giuseppe Antonio Pablo
Romano, Francesco
Petringa, Giada
Amato, Antonino
Abrégé
A method for measuring radiotherapy doses, in particular on a subject undergoing radiotherapy or other treatments with ionizing radiations, does not require any voltage applied to the subject nor the radiation of a signal collecting sensor, and it is capable of providing a measurement of absolute type, and on this regard it comprises the steps of: electrically insulating the subject during the radiotherapy treatment; applying at least one electrode to the subject, or connected to an amplifier with a system for acquiring the signal outgoing from the amplifier; detecting, by means of said at least one electrode, the voltage pulse produced during the radiotherapy treatment and deriving from the ionization secondary electrons set into motion and/or by the loaded net charge induced in the subject; converting said voltage pulse into a value of charge induced by the treatment in the subject; and determining the dose of ionizing radiations received by the subject by means of a processing system which uses the above-mentioned value of the induced charge, the energy spectrum of the incident beam of ionizing radiations and the contact surface of said incident beam on the subject.
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
10.
SYSTEM FOR ACCELERATING DATA TRANSMISSION IN NETWORK INTERCONNECTIONS
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
Inventeur(s)
Ammendola, Roberto
Vicini, Piero
Paolucci, Pier Stanislao
Lonardo, Alessandro
Frezza, Ottorino
Lo Cicero, Francesca
Martinelli, Michele
Biagioni, Andrea
Simula, Francesco
Abrégé
The present invention relates to an accelerated data transmission system in an interconnection network between at least one source node and a plurality of receiving nodes. Each of said source nodes and receiving nodes is associated with a same network card type. The source node can sub-divide the initial set of data to be transmitted to each of said plurality of receiving nodes and communicate to said network card associated with it the information related to the starting address and to which one or more of the distinct data fractions must be transmitted to each specific receiving node. In this manner, the system of the present invention can increase the data transmission operation speed by means of an interconnection network between nodes, transmitting different parts of a same data package available in the source node to different receiving nodes at the same time. The present invention also relates to a method for transmitting data which uses such network card.
ISTITUTO NAZIONALE DI FISICA NUCLEARE (I.N.F.N.) (Italie)
UNIVERSITÀ DI PISA (Italie)
UNIVERSITÀ DEGLI STUDI DI TRIESTE (Italie)
FONDAZIONE BRUNO KESSLER (Italie)
Inventeur(s)
Verzellesi, Giovanni
Dalla Betta, Gian-Franco
Bosi, Andrea
Rovati, Luigi
Saguatti, Davide
Batignani, Giovanni
Bettarini, Stefano
Giorgi, Marcello
Bosisio, Luciano
Zorzi, Nicola
Boscardin, Maurizio
Piemonte, Claudio
Giacomini, Gabriele
Bidinelli, Luca
Abrégé
The invention relates to an alpha particles detector comprising a semiconductor substrate (20), a matrix (100) of pixels (11) formed in the semiconductor substrate (20) and a plurality of bipolar transistors (110) having base regions (2) and emitter regions (3) formed in every pixel (11), the semiconductor substrate (20) being configured as a common collector for all the transistors (110).
G01T 1/178 - Dispositions de circuits non adaptés à un type particulier de détecteur pour la mesure d'une activité spécifique en présence d'autres substances radioactives, p. ex. des substances naturelles, présentes dans l'air ou dans des liquides tels que l'eau de pluie
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire
12.
DOSIMETRY DEVICE FOR VERIFICATION OF A RADIATION THERAPY APPARATUS
ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) (Italie)
DIPARTIMENTO DI FISICA SPERIMENTALE, UNIVERSITÀ DEGLI STUDI (Italie)
Inventeur(s)
Brusasco, Caterina
Marchetto, Flavio
Abrégé
The present invention relates to a dosimetry device (10) for verification of the quality of a radiation beam in standard and conformal radiation therapy, and in particular for IMRT (Intensity Modulated Radiation Therapy) applications, comprising an active area comprising individual radiation detectors, wherein the active area comprises a limited number of lines (70, 71, 80, 81, 90) of radiation detectors, and the active area further comprises extra radiation detectors (52, 62) dedicated to the energy measurement of electrons or photons, and it comprises a build-up plate (50, 60), with energy degraders (53, 63), said energy degraders (53, 63) being located upstream said extra radiation detectors (52, 62) in the path of said radiation beam.
A61N 5/10 - RadiothérapieTraitement aux rayons gammaTraitement par irradiation de particules
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations