A microelectromechanical systems (MEMS) switch device including current sensing and overcurrent protection can include a movable plate movable between an open position and a closed position, wherein the moveable plate is moved by applying at least one or more of an electrostatic force and a magnetic force to move the movable plate. The movable plate can include a shunt operable to conduct current when the movable plate is the closed position. An inductive coil electronically coupled to the shunt can detect current conducted through the shunt.
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Custom manufacture of micro electro-mechanical systems (MEMS), photonic chips, sensors and biochips to the order and specification of others Design and development of micro electro-mechanical systems (MEMS), photonic chips, sensors and biochips
Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
Systems and methods for forming a compact gas sensor include a multilayer etalon as a wavelength discriminating element. The position of the etalon may be adjusted to tune its transmission profile. And embodiment directed to carbon dioxide detection is described.
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 3/42 - Spectrométrie d'absorptionSpectrométrie à double faisceauSpectrométrie par scintillementSpectrométrie par réflexion
G01N 21/3504 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p. ex. analyse de mélanges de gaz
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
Systems and methods for forming a compact gas sensor include using a lithographically fabricated high Q resonator coupled to at least one of a Gunn diode and an IMPATT diode. The resonator may include a plurality of cavities filled with a sample gas. A detector coupled to the resonator may measure the amplitude of the emitted mm wave radiation.
H03B 9/14 - Production d'oscillations par utilisation des effets du temps de transit utilisant des dispositifs à l'état solide, p. ex. dispositifs à effet Gunn et des éléments comprenant des inductances et des capacités réparties
H03B 7/14 - Production d'oscillations au moyen d'un élément actif ayant une résistance négative entre deux de ses électrodes avec un élément déterminant la fréquence comportant des inductances et des capacités réparties l'élément actif étant un dispositif à semi-conducteurs
H03B 5/18 - Élément déterminant la fréquence comportant inductance et capacité réparties
H03B 7/06 - Production d'oscillations au moyen d'un élément actif ayant une résistance négative entre deux de ses électrodes avec un élément déterminant la fréquence comportant des inductances et des capacités localisées l'élément actif étant un dispositif à semi-conducteurs
G01N 22/00 - Recherche ou analyse des matériaux par l'utilisation de micro-ondes ou d'ondes radio, c.-à-d. d'ondes électromagnétiques d'une longueur d'onde d'un millimètre ou plus
H03B 9/12 - Production d'oscillations par utilisation des effets du temps de transit utilisant des dispositifs à l'état solide, p. ex. dispositifs à effet Gunn
Described here is a platform for supporting a fiber optic cable. The platform may be made on a silicon wafer using silicon lithographic processing techniques. The platform may include a substrate having a top planar surface; a trench formed in the substrate in the top planar surface and dimensioned to accept a fiber optic cable carrying radiation; and a reflecting surface formed in the top planar surface, wherein this reflecting surface is configured to reflect the radiation by total internal reflection, wherein the reflecting surface is configured to direct radiation travelling in a first direction into a second direction, substantially orthogonal to the first direction.
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
G02B 6/44 - Structures mécaniques pour assurer la résistance à la traction et la protection externe des fibres, p. ex. câbles de transmission optique
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
G02B 6/35 - Moyens de couplage optique comportant des moyens de commutation
A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p. ex. revêtement ou placage au moyen d'une presse
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.
H01L 33/18 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure cristalline ou une orientation particulière, p.ex. polycristalline, amorphe ou poreuse au sein de la région électroluminescente
A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
10.
Method and device using silicon substrate to glass substrate anodic bonding
A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a Second bond, for example a metal alloy, solder, eutectic and polymer bond. The two bonds may be used for the same or a different purpose, and may be selected for the following attributes: hermeticity, electrical conductivity, low RF loss, high adhesive strength, leak resistance, thermal conductivity. The attributes for each bonding technology may be the same, or they may be different.
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.
B32B 37/12 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.
B32B 15/04 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B81B 1/00 - Dispositifs sans éléments mobiles ou flexibles, p. ex. dispositifs capillaires microscopiques
B32B 37/00 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
B32B 37/12 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
13.
Microfabricated magnetic field transducer with flux guide
A microfabricated magnetic field transducer uses a magnetically sensitive structure in combination with one or more permeable magnetic flux guides. The flux guides may route off-axis components of an externally applied magnetic field across the sensitive axis of the magnetically sensitive structure, or may shield the magnetically sensitive structure from off-axis, stray fields or noise sources. A combination of flux guides and magnetically sensitive structures arranged on a single substrate may enable an integrated, 3-axis magnetometer in a single package, greatly improving cost and performance.
An approach to obtain localized heat within a sealed vacuum cavity is disclosed. The approach uses an exothermic reaction between two reactants to generate heat in the vicinity of a structure, such as a getter material or a bondline that is heat activated. The exothermic reaction can be initiated by application of laser light, or application of current to a current-carrying conductor in the vicinity of the reactants.
H01L 23/20 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet gazeux à la température normale de fonctionnement du dispositif
H01L 23/26 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet incluant des matériaux destinés à absorber ou à réagir avec l'humidité ou d'autres substances indésirables
15.
Method and apparatus for applying thin liquid coatings
Systems and methods for applying a thin layer of a liquid to the surface of a wafer with topography formed therein. The systems and methods include spreading a deposit of the liquid into a thin film on a wafer support, lowering the wafer onto the film, removing the wafer with an adhering layer of the film, positioning the wafer over a device wafer with the liquid film disposed between the wafers, curing the thin layer. The thin layer may be a UV adhesive which bonds the wafers upon exposure to UV light.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/469 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer les caractéristiques physiques ou la forme de leur surface, p. ex. gravure, polissage, découpage pour y former des couches isolantes, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couches
16.
MEMS particle sorting actuator and method of manufacturing
A MEMS-based system and a method are described for separating a target particle from the remainder of a fluid stream. The system makes use of a unique, microfabricated movable structure formed on a substrate, which moves in a rotary fashion about one or more fixed points, which are all located on one side of the axis of motion. The movable structure is actuated by a separate force-generating apparatus, which is entirely separate from the movable structure formed on its substrate. This allows the movable structure to be entirely submerged in the sample fluid.
C12M 1/36 - Appareillage pour l'enzymologie ou la microbiologie comportant une commande sensible au temps ou aux conditions du milieu, p. ex. fermenteurs commandés automatiquement
A method for forming through features in a substrate uses a seed layer deposited over a first substrate, and a second substrate bonded to the seed layer. The features may be formed in the first substrate, by plating a conductive filler material onto the seed layer. The first substrate and the second substrate may then be bonded to a third substrate, and the second substrate is removed, leaving through features and first substrate adhered to the third substrate. The through features may provide at least one of electrical access and motion to a plurality of devices formed on the third substrate, or may impart movement to a moveable feature on the first substrate, wherein the third substrate supports the first substrate after removal of the second substrate.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
18.
System and method for providing access to an encapsulated device
A method for providing access to a feature on a device wafer, and located outside an encapsulation region is described. The method includes forming a cavity in the lid wafer, aligning the lid wafer with the device wafer so that the cavity is located substantially above the feature, and removing material substantially uniformly from the bottom surface of the lid wafer, until an aperture is formed at the cavity, over the feature on the device wafer. By removing material from the lid wafer in a substantially uniform manner, difficulties with the prior art procedure of saw cutting, such as alignment and debris generation, are avoided.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 21/30 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
H01L 21/46 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
A micromechanical pumping system is formed on a substrate surface. The pumping system uses a pumping element which pumps a fluid through valves which move in a plane substantially parallel to the substrate surface. An electromagnetic actuating mechanism may also be fabricated on the surface of the substrate. Magnetic flux produced by a coil around a permeable core may be coupled to a permeable member affixed to a pumping element. The permeable member and pumping element may be configured to move in a plane parallel to the substrate. The electromagnetic actuating mechanism gives the pumping system a large throw and substantial force, such that the fluid pumped by the pumping system may be pumped through a transdermal cannula to deliver a therapeutic substance to the tissue underlying the skin of a patient.
A61M 1/00 - Dispositifs de succion ou de pompage à usage médicalDispositifs pour retirer, traiter ou transporter les liquides du corpsSystèmes de drainage
A61K 9/22 - Pilules, pastilles ou comprimés du type à libération prolongée ou discontinue
An optical material is inlaid into a supporting substrate, with the top surface of the optical material flush with the top surface of the substrate, wherein the optical element is used to shape a beam of light travelling substantially parallel to the top surface of the substrate, but with the central axis of the beam below the top surface of the substrate. The optical elements serve to shape the beam of light for delivery to or from a microfabricated structure within the device.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
B29D 11/00 - Fabrication d'éléments optiques, p. ex. lentilles ou prismes
H01J 3/14 - Dispositifs pour la focalisation ou la réflexion du rayon ou du faisceau
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01N 15/06 - Recherche de la concentration des suspensions de particules
Systems and methods for forming a configurable power supply uses a plurality of dual substrate MEMS switches to couple a plurality of power cells to provide a selectable, or variable, output voltage. The same circuit may output two different voltages to power two different circuits of the device, or may distribute the load evenly amongst the cells. Thus, the configurable power supply may extend the lifetime and improve the reliability of the device, or decrease its weight, size and cost.
A MEMS hysteretic thermal device may be formed having two passive beam segments driven by a current-carrying loop coupled to the surface of a substrate. The first beam segment is configured to move in a direction having a component perpendicular to the substrate surface, whereas the second beam segment is configured to move in a direction having a component parallel to the substrate surface. By providing this two-dimensional motion, a single MEMS hysteretic thermal device may by used to close a switch having at least one stationary contact affixed to the substrate surface.
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
23.
Hysteretic MEMS thermal device and method of manufacture
A MEMS hysteretic thermal actuator may have a plurality of beams disposed over a heating element formed on the surface of the substrate. The plurality of beams may be coupled to a passive beam which is not disposed over the heating element. One of the plurality of beams may be formed in a first plane parallel to the substrate, whereas another of the plurality of beams may be formed in a second plane closer to the surface of the substrate. When the heating element is activated, it heats the plurality of beams such that they move the passive beam in a trajectory that is neither parallel to nor perpendicular to the surface of the substrate. When the beams are cooled, they may move in a different trajectory, approaching the substrate before moving laterally across it to their initial positions. By providing one electrical contact on the distal end of the passive beam and another stationary electrical contact on the substrate surface, the MEMS hysteretic actuator may form a reliable electrical switch that is relatively simple to manufacture and operate.
A system and a method are described for forming features at the bottom of a cavity in a substrate. Embodiments of the systems and methods provide an infrared transmitting, hermetic lid for a microdevice. The lid may be manufactured by first forming small, subwavelength features on a surface of an infrared transmitting substrate, and coating the subwavelength features with an etch stop material. A spacer wafer is then bonded to the infrared transmitting substrate, and a device cavity is etched into the spacer wafer down to the etch stop material, exposing the subwavelength features. The etch stop material may then be removed, and the microdevice enclosed in the device cavity, by bonding the device wafer to the lid.
A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjacent grains and is recessed by at least about 0.05 μm from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.
A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
27.
Wafer bonding material with embedded conductive particles
A material for bonding a first wafer to a second wafer, which includes an insulating adhesive with conductive particles embedded in the adhesive substance. When the adhesive is applied and melted or fused, and pressure is applied between the first wafer and the second wafer, the first wafer approaches the second wafer until a minimum separation is reached, defined by a dimension of the conductive particles. Each of the first wafer and the second wafer may have circuitry formed thereon, and the conductive particles may form a conductive path between the circuitry on one wafer and the circuitry on the other wafer. Advantageously, the high fusing temperature required by the insulating adhesive may also serve to activate a getter material, formed in the device cavity between the first wafer and the second wafer.
H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués
B29C 65/48 - Assemblage d'éléments préformésAppareils à cet effet en utilisant des adhésifs
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
28.
System and method for providing access to an encapsulated device
A method for providing access to a feature on a device wafer, and located outside an encapsulation region is described. The method includes forming a cavity in the lid wafer, aligning the lid wafer with the device wafer so that the cavity is located substantially above the feature, and removing material substantially uniformly from the bottom surface of the lid wafer, until an aperture is formed at the cavity, over the feature on the device wafer. By removing material from the lid wafer in a substantially uniform manner, difficulties with the prior art procedure of saw cutting, such as alignment and debris generation, are avoided.
H01L 29/207 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV caractérisés en outre par le matériau de dopage
29.
Indented structure for encapsulated devices and method of manufacture
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
30.
Wafer bonding material with embedded rigid particles
A material for bonding a lid wafer to a device wafer, which includes an adhesive substance with rigid particles embedded in the adhesive substance. The rigid particles may be particles or spheres of alumina, silica, or diamond, for example. The adhesive substance may be glass frit, epoxy, glue, cement or solder, for example. When the adhesive is applied and melted, and pressure is applied between the lid wafer and the device wafer, the lid wafer approaches the device wafer until a minimum separation is reached, which is defined by the rigid particles.
A material for forming a conductive structure for a MEMS device is described, which is an alloy containing about 0.01% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower than the sheet resistance of the pure metal. In addition, the alloy may have superior creep and higher recrystallization temperature than the pure metal. It is hypothesized that these advantageous material properties are a result of the larger grain structure existing in the NiMn alloy film compared to the pure nickel metal film. These properties may make the alloy appropriate for applications such as MEMS thermal electrical switches for telecommunications applications.
A MEMS thermal switch is disclosed which couples a hot, expanding beam to a cool flexor beam using a slideably engaged tether, and bends the cool, flexor beam by the expansion of the hot beam. A rigidly engaged tether ties the distal ends of the hot, expanding beam and the cool, flexor beam together, whereas the slideably engaged tether allows the hot, expanding beam to elongate with respect to the cool, flexor beam, without loading the slideably engaged tether with a large shear force. As a result, the material of the tether can be made stiffer, and therefore transmit the bending force of the hot, expanding beam more efficiently to the cool, flexor beam.
A method for forming moveable features suspended over a substrate is described, wherein a cavity beneath the moveable feature is first formed using a liquid etchant applied through one or more release holes. After formation of the cavity, the outline of the moveable feature is formed using a dry etch process. Since the moveable feature is free to move upon its formation using the dry etch process, no stiction issues arise using the systems and methods described here.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
An apparatus for bonding a lid wafer to a device wafer includes an elastic interface having a first surface and a second surface. Relieved areas may be created in the elastic interface by removing at least some of the elastic material of the interface, leaving a mesh with nodes. Raised areas may be disposed on the nodes in staggered positions on the first surface relative to the second surface. The bonding pressure deflects the raised features on the first surface in one direction and the raised features on the second surface in another direction. The restoring force of the mesh transmits the pressure through the interface and to a lid wafer and a device wafer, to bond the lid wafer to the device wafer.
B23K 37/00 - Dispositifs ou procédés auxiliaires non spécialement adaptés à un procédé couvert par un seul des autres groupes principaux de la présente sous-classe
35.
Hysteretic MEMS thermal device and method of manufacture
A MEMS hysteretic thermal device may have a cantilevered beam which bends about one or more points in at least two substantially different directions. In one exemplary embodiment, the MEMS hysteretic thermal device is made from a first segment coupled to an anchor point, and also coupled to a second segment by a joint. Heating two respective drive beams causes the first segment to bend in a direction substantially about the anchor point and the second segment to bend in a direction substantially about the joint. By cooling the first drive beam faster than the second drive beam, the motion of the MEMS thermal device may be hysteretic. The MEMS hysteretic thermal device may be used for example, as an electrical switch or as a valve or piston.
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.
