Minimizing total thickness variation in a spin-coated film often requires the use of a component that is, or behaves as, a surfactant, particularly as the thickness of the film increases to hundreds of nanometers and beyond. Currently, many commercially important surfactants used to improve coat quality are considered PFAS materials and are being phased out of materials. A set of new PFAS-free surfactants has been synthesized and tested for efficacy in improving coat quality. The surfactants comprise a central core molecule grafted with at least two recurring monomers that are different from the central core.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 83/00 - Composés macromoléculaires non prévus dans les groupes
Materials and methods for modifying surfaces in order to change surface energy are provided. These surface properties cause the surface to become more hydrophobic or oleophobic after light exposure. The ability to change surface energy upon exposure allows these materials to be patterned and enables a variety of uses, notably for use on semiconductor substrates in photolithography.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C09D 133/10 - Homopolymères ou copolymères d'esters de l'acide méthacrylique
G03F 7/16 - Procédés de couchageAppareillages à cet effet
Minimizing total thickness variation in a spin-coated film often requires the use of a component that is, or behaves as, a surfactant, particularly as the thickness of the film increases to hundreds of nanometers and beyond. Currently, many commercially important surfactants used to improve coat quality are considered PFAS materials and are being phased out of materials. A set of new PFAS-free surfactants has been synthesized and tested for efficacy in improving coat quality. The surfactants comprise a central core molecule grafted with at least two recurring monomers that are different from the central core.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer, with the underlayer a polymer, oligomer, and/or monomer comprising a cationic moiety. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate and exhibit uniform thicknesses and low roughness. The disclosed method enables a reduced exposure dose to be utilized while minimizing bridging, scumming, and other pattern defects.
G03F 7/031 - Composés organiques non couverts par le groupe
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer, with the underlayer a polymer, oligomer, and/or monomer comprising a cationic moiety. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate and exhibit uniform thicknesses and low roughness. The disclosed method enables a reduced exposure dose to be utilized while minimizing bridging, scumming, and other pattern defects.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
6.
EFFICIENT SILICON HARDMASK COMPOSITIONS AND METHODS FOR LITHOGRAPHIC MICROELECTRONIC STRUCTURE FABRICATION
A composition for use in forming silicon hardmask layers is disclosed. The composition includes a nonpolymeric siloxane comprising a chromophore moiety, a polysiloxane, and optionally a thermal acid generator in a solvent system. The composition can be applied to a layer on substrate and heated to crosslink the polysiloxane, thus forming the silicon hardmask layer. A photoresist is then applied to the silicon hardmask layer, followed by DUV light exposure and development to form a pattern in the photoresist layer that is transferred to the silicon hardmask layer and other layers to the substrate. The composition minimizes chromophore sublimation and allows adjustments to the absorbance level needed for the particular application while also achieving manufacturing consistency.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A composition for use in forming silicon hardmask layers is disclosed. The composition includes a nonpolymeric siloxane comprising a chromophore moiety, a polysiloxane, and optionally a thermal acid generator in a solvent system. The composition can be applied to a layer on substrate and heated to crosslink the polysiloxane, thus forming the silicon hardmask layer. A photoresist is then applied to the silicon hardmask layer, followed by DUV light exposure and development to form a pattern in the photoresist layer that is transferred to the silicon hardmask layer and other layers to the substrate. The composition minimizes chromophore sublimation and allows adjustments to the absorbance level needed for the particular application while also achieving manufacturing consistency.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/16 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène à des groupes hydroxyle
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A composition for use in forming low-refractive-index layers includes a siloxane polymer, a porogen, and a curing catalyst that is different from the porogen. The composition can be processed at low temperatures of less than about 125°C (e.g., about 70-90°C) to crosslink the polymer. The crosslinked material can be exposed to a developer (e.g., acetone) to remove the porogen, thus forming a low-refractive-index film (e.g., less than about 1.3). A method of forming a nanoporous structure includes applying a composition including a siloxane polymer and a porogen to a substrate. The composition optionally includes a curing catalyst different from the porogen. The siloxane polymer is crosslinked and then contacted with a developer so as to remove the porogen and form pores in the crosslinked composition to yield the nanoporous structure.
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
C08J 9/26 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement par élimination d'une phase solide d'un objet ou d'une composition macromoléculaire, p. ex. par lessivage
C08J 3/24 - Réticulation, p. ex. vulcanisation, de macromolécules
A composition for use in forming low-refractive-index layers includes a siloxane polymer, a porogen, and a curing catalyst that is different from the porogen. The composition can be processed at low temperatures of less than about 125° C. (e.g., about 70-90° C.) to crosslink the polymer. The crosslinked material can be exposed to a developer (e.g., acetone) to remove the porogen, thus forming a low-refractive-index film (e.g., less than about 1.3). A method of forming a nanoporous structure includes applying a composition including a siloxane polymer and a porogen to a substrate. The composition optionally includes a curing catalyst different from the porogen. The siloxane polymer is crosslinked and then contacted with a developer so as to remove the porogen and form pores in the crosslinked composition to yield the nanoporous structure.
C08J 9/26 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement par élimination d'une phase solide d'un objet ou d'une composition macromoléculaire, p. ex. par lessivage
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
A method of forming a microelectronic structure on a substrate is disclosed. The method includes applying an underlayer forming composition to an uppermost intermediate layer of a lithography stack, if present, or to the substrate to form an underlayer. The underlayer forming composition includes a pre-ionic compound that generates an ionic compound, moiety, or both during post-application bake. The pre-ionic compound can include, for example, a copolymer having glycidyl methacrylate and 4-vinylpyridine. An EUV-sensitive photoresist comprising a metal-oxide is applied directly on an upper surface of the underlayer. EUV lithography is then performed. This method can be used to achieve dose reduction compared to prior art methods of EUV lithography using metal- oxide containing photoresists. Various underlayer forming compositions for performing EUV lithography using a metal-oxide-containing resist are also disclosed.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
11.
ORGANIC UNDERLAYER AND METHODS FOR EUV DOSE REDUCTION
A method of forming a microelectronic structure on a substrate is disclosed. The method includes applying an underlayer forming composition to an uppermost intermediate layer of a lithography stack, if present, or to the substrate to form an underlayer. The underlayer forming composition includes a pre-ionic compound that generates an ionic compound, moiety, or both during post-application bake. The pre-ionic compound can include, for example, a copolymer having glycidyl methacrylate and 4-vinylpyridine. An EUV-sensitive photoresist comprising a metal-oxide is applied directly on an upper surface of the underlayer. EUV lithography is then performed. This method can be used to achieve dose reduction compared to prior art methods of EUV lithography using metal-oxide containing photoresists. Various underlayer forming compositions for performing EUV lithography using a metal-oxide-containing resist are also disclosed.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method of modifying PFAS-free products to render those products suitable for use in semiconductor lithography processes is provided. The modification method involves forming a dispersion or solution of the product and storing it under cold conditions to effect precipitation of the target compound of the product (e.g., an acid generator). The modified product can then be used in various types of lithography compositions to form a desired layer (e.g., spin-on carbon or other carbon- rich layer, hardmask layer) that will meet stringent lithographic industry requirements for semiconductor device manufacture while minimizing use of PFAS-containing materials.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/42 - Élimination des réserves ou agents à cet effet
A method of modifying PFAS-free products to render those products suitable for use in semiconductor lithography processes is provided. The modification method involves forming a dispersion or solution of the product and storing it under cold conditions to effect precipitation of the target compound of the product (e.g., an acid generator). The modified product can then be used in various types of lithography compositions to form a desired layer (e.g., spin-on carbon or other carbon-rich layer, hardmask layer) that will meet stringent lithographic industry requirements for semiconductor device manufacture while minimizing use of PFAS-containing materials.
C07C 213/08 - Préparation de composés contenant des groupes amino et hydroxy, amino et hydroxy éthérifiés ou amino et hydroxy estérifiés liés au même squelette carboné par des réactions n'impliquant pas la formation de groupes amino, de groupes hydroxy ou de groupes hydroxy éthérifiés ou estérifiés
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
14.
LASER-RELEASABLE BONDING MATERIALS FOR 3-D IC APPLICATIONS
Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
C08G 69/08 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés d'acides aminocarboxyliques
C08G 69/26 - Polyamides dérivés, soit des acides amino-carboxyliques, soit de polyamines et d'acides polycarboxyliques dérivés de polyamines et d'acides polycarboxyliques
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
Produits et services
Material treatment of wafers; Custom manufacture of integrated circuits for others, namely, wafer-level packaging of semiconductors; Assembly services for silicon wafers and integrated circuits; Wafer level and single-wafer technology processing, namely, treatment of semiconductor wafers; semiconductor wafer processing; Custom packaging manufacture and measurement for integrated circuit wafer for others; Semiconductor wafer, semiconductor chips and integrated circuit processing and custom assembly services for others; Providing information regarding all of the foregoing services; Technical consulting services, namely, technical advice related to all of the foregoing services
16.
SOLUBILITY SWITCH TOPOGRAPHIC FILL MATERIALS AND METHODS
Materials and methods are described for filling deep trenches and other topography using a single coating of a topographic fill material and a single develop back step while maintaining a thickness that can be controlled and is sufficient to fill very deep topographies to the extent needed for lithographic patterning. The materials are designed for selective changes to their solubility, and the methods involve using this feature to achieve selective removal of desired amounts of the topographic fill material at various stages of the process. This allows more efficient processing and higher throughput for lithographic applications in which a photoresist is applied over deep topography while addressing the problems of resist cracking, bending, peeling, or scumming.
Materials and methods are described for filling deep trenches and other topography using a single coating of a topographic fill material and a single develop back step while maintaining a thickness that can be controlled and is sufficient to fill very deep topographies to the extent needed for lithographic patterning. The materials are designed for selective changes to their solubility, and the methods involve using this feature to achieve selective removal of desired amounts of the topographic fill material at various stages of the process. This allows more efficient processing and higher throughput for lithographic applications in which a photoresist is applied over deep topography while addressing the problems of resist cracking, bending, peeling, or scumming.
A method is described for debonding a carrier and device substrate using a high-intensity, pulsed, broadband light system that is suitable for wafer-level packaging applications. The carrier substrate is a transparent wafer with a light absorbing layer on one side of the wafer. This method utilizes the high intensity light to rapidly heat up the light absorbing layer to decompose or melt a bonding material layer that is adjacent to the light absorbing layer. After exposure to light, the carrier substrate can be lifted off the surface of the device wafer with little or no force.
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
19.
ACIDIC SPIN-ON CARBON (SOC) LAYER FOR EUV LITHOGRAPHY
Methods of using an acid-generating, spin-on carbon (SOC) layer for EUV lithography are disclosed. The methods can be used to reduce the dose, scumming, and/or nanobridges induced by insufficient acid at the bottom of a photoresist for both line/space (LS) and contact hole (CH) applications. The methods may improve uniformity in acid compensation at the bottom of the photoresist via bottom-up diffusion of an acid from the acid-generating layer. By utilizing the acid-generating SOC layer under a spin-on silicon hardmask or spin-on glass (SOG), dose reduction has been realized.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
20.
ACIDIC SPIN-ON CARBON (SOC) LAYER FOR EUV LITHOGRAPHY
Methods of using an acid-generating, spin-on carbon (SOC) layer for EUV lithography are disclosed. The methods can be used to reduce the dose, scumming, and/or nanobridges induced by insufficient acid at the bottom of a photoresist for both line/space (LS) and contact hole (CH) applications. The methods may improve uniformity in acid compensation at the bottom of the photoresist via bottom-up diffusion of an acid from the acid-generating layer. By utilizing the acid- generating SOC layer under a spin-on silicon hardmask or spin-on glass (SOG), dose reduction has been realized.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
21.
VERSATILE DUAL-LAYER TEMPORARY WAFER BONDING FOR HARSH PROCESSING CONDITIONS
A dual-layer temporary bonding system for semiconductor manufacturing including first and second bonding layers is provided. The first bonding layer includes a bond line adhesion promoter that acts as a bond line adhesion promoter during the bonding process. The second bonding layer includes one or more functionalities that will react with the bond line adhesion promoter during the bonding process. The materials and methods of this system can provide increased, precisely controlled, bond line adhesion while at the same time also satisfying other desired performance criteria.
A dual-layer temporary bonding system for semiconductor manufacturing including first and second bonding layers is provided. The first bonding layer includes a bond line adhesion promoter that acts as a bond line adhesion promoter during the bonding process. The second bonding layer includes one or more functionalities that will react with the bond line adhesion promoter during the bonding process. The materials and methods of this system can provide increased, precisely controlled, bond line adhesion while at the same time also satisfying other desired performance criteria.
A dual-layer temporary bonding system for semiconductor manufacturing including first and second bonding layers is provided. The first bonding layer includes a bond line adhesion promoter that acts as a bond line adhesion promoter during the bonding process. The second bonding layer includes one or more functionalities that will react with the bond line adhesion promoter during the bonding process. The materials and methods of this system can provide increased, precisely controlled, bond line adhesion while at the same time also satisfying other desired performance criteria.
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
C09J 163/00 - Adhésifs à base de résines époxyAdhésifs à base de dérivés des résines époxy
C08L 63/00 - Compositions contenant des résines époxyCompositions contenant des dérivés des résines époxy
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
24.
COMPOSITIONS AND METHODS FOR FORMING METAL ORGANIC FRAMEWORK (MOF) FILMS AND RELATED MICROELECTRONIC DEVICES
Materials that are processable as spin coated films with a refractive index of less than about 1.25 are presented. These compositions include metal organic frameworks in a solvent system, with the MOFs including a metal or metal cluster (e.g., zirconium oxide) having organic linkers (e.g., maleic acid, benzene dicarboxylic acid) and optional endcaps to alter pore size, compositional stability, steric, and other properties of the material. The formed films are processable at low temperatures, thus allowing them to be processed on plastics. The provided materials find use in, for example, silicon photonics, augmented reality applications, virtual reality (VR) applications, CMOS image sensors, and micro-OLED applications.
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
C09D 7/63 - Adjuvants non macromoléculaires organiques
Compositions and methods for global planarization of microelectronic substrates are provided. The methods include applying a crosslinking modifier composition to the surface of a substrate, or to any intermediate layer(s) on the substrate surface. A planarizing material can then be applied to the crosslinking modifier layer, which influences the degree of crosslinking in the planarizing layer. Depending on the specific topography of the underlying substrate (or intermediate layer), different amounts of planarizing material are removed during a subsequent develop back step, thereby eliminating bias that usually exists between regions of varying topographic density. The result is an effective global planarization method that is both time and cost efficient.
Compositions and methods for global planarization of microelectronic substrates are provided. The methods include applying a crosslinking modifier composition to the surface of a substrate, or to any intermediate layer(s) on the substrate surface. A planarizing material can then be applied to the crosslinking modifier layer, which influences the degree of crosslinking in the planarizing layer. Depending on the specific topography of the underlying substrate (or intermediate layer), different amounts of planarizing material are removed during a subsequent develop back step, thereby eliminating bias that usually exists between regions of varying topographic density. The result is an effective global planarization method that is both time and cost efficient.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/32 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches en utilisant des masques
27.
CATALYST-FREE CROSSLINKING OF PROPIOLATE-ESTER-FUNCTIONALIZED MOLECULES AND POLYMERS
A novel method to prepare crosslinked thin films without the use of catalysts is disclosed. Propiolic acid is grafted to a glycidyl or epoxy group using a phosphonium catalyst under mild conditions to yield a propiolate ester. The propiolate ester is thermally crosslinkable (and the polymer film rendered insoluble) at temperatures as low as 120°C, and some embodiments may undergo photo¬ induced crosslinking upon exposure to DUV light. The resulting crosslinked films are equivalent or better in stability to acid-catalyzed epoxide crosslinked films and can be used for a multitude of different applications.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A novel method to prepare crosslinked thin films without the use of catalysts is disclosed. Propiolic acid is grafted to a glycidyl or epoxy group using a phosphonium catalyst under mild conditions to yield a propiolate ester. The propiolate ester is thermally crosslinkable (and the polymer film rendered insoluble) at temperatures as low as 120° C., and some embodiments may undergo photoinduced crosslinking upon exposure to DUV light. The resulting crosslinked films are equivalent or better in stability to acid-catalyzed epoxide crosslinked films and can be used for a multitude of different applications.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C07C 67/313 - Préparation d'esters d'acides carboxyliques par modification de la partie acide de l'ester sans introduction d'un groupe ester par introduction de groupes fonctionnels avec de l'oxygène lié par liaison double, p. ex. de groupes carboxyle
Materials and methods for modifying surfaces in order to change surface energy are provided. These surface properties cause the surface to become more hydrophobic or oleophobic after light exposure. The ability to change surface energy upon exposure allows these materials to be patterned and enables a variety of uses, notably for use on semiconductor substrates in photolithography.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C09D 133/10 - Homopolymères ou copolymères d'esters de l'acide méthacrylique
G03F 7/16 - Procédés de couchageAppareillages à cet effet
Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
C08G 77/50 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone
C09D 183/14 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carboneCompositions de revêtement à base de dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène
Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A sulfonic acid derivative compound represented by Formula (I):
A sulfonic acid derivative compound represented by Formula (I):
A sulfonic acid derivative compound represented by Formula (I):
wherein R is a substituted or unsubstituted C1-C12 alkyl group; and Z is selected from the group consisting of a substituted or unsubstituted polycyclic C3-C30 cycloalkyl group, a substituted or unsubstituted monocyclic C3-C30 cycloalkyl group, and a substituted or unsubstituted C3-C30 monocyclic heteroalkyl group. Compounds and compositions disclosed herein are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.
New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Methods for direct patterning of a silicon hardmask with extreme ultraviolet (EUV) radiation are provided. The method involves forming a polysiloxane and/or oligosiloxane composition into a silicon hardmask layer followed by solvent removal. Without using a photoresist and/or other layer silicon hardmask layer, condensation of the siloxane sol-gel polymers and/or oligomers is induced by EUV radiation, rendering the exposed portions insoluble in typical lithography solvents or developers. The exposed portions of the silicon hardmask layer are removed, leaving a pattern in the silicon hardmask layer that can be transferred to any layers below the silicon hardmask layer, and ultimately to the substrate.
Thermally decomposable gap-fill materials are disclosed that fill small features and are completely removed by a high-temperature bake after processing. These materials are self-crosslinkable polymers. Potential applications of these materials include use as sacrificial gap-fill materials for creating air gaps, as well as protection of high-aspect-ratio or other delicate microelectronic features during processing steps.
In one embodiment, a voltammetry sensor measurement system includes one or more potentiostats configured to transmit an electrical input to a working electrode of a voltammetry sensor and to measure an electrical output from the voltammetry sensor in response to the electrical input, the electrical input including a square wave electrical input, the measured electrical output including a differential current through the working electrode. A controller is coupled with the potentiostats to monitor, in real time, the differential current through the working electrode. The controller is configured to determine if the monitored differential current will exceed a preset differential current threshold of the voltammetry sensor, using a predictive algorithm based on the monitored differential current, before the differential current reaches the threshold; and to generate a signal when the monitored differential current is determined to exceed the threshold, to preserve the voltammetry sensor before the differential current reaches the threshold.
In one embodiment, a voltammetry sensor measurement system includes one or more potentiostats configured to transmit an electrical input to a working electrode of a voltammetry sensor and to measure an electrical output from the voltammetry sensor in response to the electrical input, the electrical input including a square wave electrical input, the measured electrical output including a differential current through the working electrode. A controller is coupled with the potentiostats to monitor, in real time, the differential current through the working electrode. The controller is configured to determine if the monitored differential current will exceed a preset differential current threshold of the voltammetry sensor, using a predictive algorithm based on the monitored differential current, before the differential current reaches the threshold; and to generate a signal when the monitored differential current is determined to exceed the threshold, to preserve the voltammetry sensor before the differential current reaches the threshold.
Adhesive additives are disclosed that enhance spin-on carbon (SOC) resistance to SC-1 wet etch. The additives can be formed by reacting a polymer or oligomer (such as an adhesion polymer or adhesion oligomer) with 3,4,5-triacetoxybenzoic acid (TABA). When added to standard SOC layers or used as a primer between an SOC layer and substrate, these additives enhance the adhesion of the SOC layer to TiN and other substrates and reduce undercut during SC-1 wet etch.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
C08F 265/04 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'acides monocarboxyliques non saturés ou de leurs dérivés tels que définis dans le groupe sur des polymères d'esters
Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Composites comprising metal-oxide-functionalized carbon nanotubes with metal nanoparticles deposited thereon are provided. These composites can be used as a working electrode in an electrochemical sensor to detect arsenite in aqueous solutions. The composite can electrochemically reduce As3+ to As0 due to increasing adsorption capability. In one embodiment, Au nanoparticles are deposited on the TiOx/CNT electrode to facilitate the adsorption of As3+ on the electrode surface for further electrochemical reduction process. Square wave voltammetry (SWV) is performed to detect the electrochemical reduction of arsenite in water.
A carbon nanotube sensor device for detecting CO2 and methods of its production and use. A printable polyethylenimine (PEI)-functionalized carbon nanomaterial paste may be used to form the active sensing layer of the device, which is particularly sensitive to CO2. A separate printed heating layer may be used to maintain the working temperature of the sensor, as well as to remove and/or clear volatile gases from the sensor.
A sensing platform for continuous water resource monitoring by electrochemical detection and solution parameter correction is provided. The sensing platform employs a solid-state electrolyte three-electrode cell, creating a high ionic strength environment within the solid-state electrolyte membrane, which is in ion exchange equilibria with the sampled solution. This device may be used as a standalone sensor in environments where the water parameters (pH temperature, and ionic strength) are controlled, or in concert with compensation sensors where water parameters are not controlled.
A carbon nanotube (CNT) ion-selective field effect transistor (IS-FET) integrated device is used to detect nitrate ion in water. The device is operated as an IS-FET sensor, holding the measured potential between the drain electrode and an external reference electrode constant with a potentiometric circuit. Transduction occurs by changes in the effective CNT film gate potential with changes in the phase boundary potential of an ion-selective membrane (ISM) film. Moreover, the nitrate ISM film makes the device highly selective towards nitrate sensing. This printable IS-FET nitrate sensor enables real-time and high-resolution measurements and recording of nitrate ion in water at low cost.
Composites comprising metal-oxide-functionalized carbon nanotubes with metal nanoparticles deposited thereon are provided. These composites can be used as a working electrode in an electrochemical sensor to detect arsenite in aqueous solutions. The composite can electrochemically reduce As3+to As0due to increasing adsorption capability. In one embodiment, Au nanoparticles are deposited on the TiOx/CNT electrode to facilitate the adsorption of As3+ on the electrode surface for further electrochemical reduction process. Square wave voltammetry (SWV) is performed to detect the electrochemical reduction of arsenite in water.
A sensing platform for continuous water resource monitoring by electrochemical detection and solution parameter correction is provided. The sensing platform employs a solid-state electrolyte three-electrode cell, creating a high ionic strength environment within the solid-state electrolyte membrane, which is in ion exchange equilibria with the sampled solution. This device may be used as a standalone sensor in environments where the water parameters (pH temperature, and ionic strength) are controlled, or in concert with compensation sensors where water parameters are not controlled.
A carbon nanotube (CNT) ion-selective field effect transistor (IS-FET) integrated device is used to detect nitrate ion in water. The device is operated as an IS-FET sensor, holding the measured potential between the drain electrode and an external reference electrode constant with a potentiometric circuit. Transduction occurs by changes in the effective CNT film gate potential with changes in the phase boundary potential of an ion-selective membrane (ISM) film. Moreover, the nitrate ISM film makes the device highly selective towards nitrate sensing. This printable IS- FET nitrate sensor enables real-time and high-resolution measurements and recording of nitrate ion in water at low cost.
Achieving homogeneous and heterogeneous integration for 2.5D and 3D integrated circuit, chip-to-wafer, chip-to-substrate, or wafer-to-wafer bonding is an essential technology. The landing wafer or substrate is bonded with a carrier by using a temporary bonding material before thinning the landing wafer to the desired thickness. Upon completion of redistribution layer formation, Cu pad formation, or other backside processing, dies or wafers with through-silicon vias are stacked onto the landing substrate before molding and singulation. As the landing wafer usually has interconnection metals in the bond line, and those interconnection metals are typically made from lead-free solder alloys, deformation of those solder alloys during thermocompression bonding becomes an issue for manufacturers. To address this issue, a polymeric material with desired strengths is coated on the device wafer to form a conformal protective layer on top of solder alloys, thus enabling temporary bonding and debonding processes.
Achieving homogeneous and heterogeneous integration for 2.5D and 3D integrated circuit, chip-to-wafer, chip-to-substrate, or wafer-to-wafer bonding is an essential technology. The landing wafer or substrate is bonded with a carrier by using a temporary bonding material before thinning the landing wafer to the desired thickness. Upon completion of redistribution layer formation, Cu pad formation, or other backside processing, dies or wafers with through-silicon vias are stacked onto the landing substrate before molding and singulation. As the landing wafer usually has interconnection metals in the bond line, and those interconnection metals are typically made from lead-free solder alloys, deformation of those solder alloys during thermocompression bonding becomes an issue for manufacturers. To address this issue, a polymeric material with desired strengths is coated on the device wafer to form a conformal protective layer on top of solder alloys, thus enabling temporary bonding and debonding processes.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
50.
CHEMICALLY HOMOGENEOUS SILICON HARDMASKS FOR LITHOGRAPHY
Silicon hardmasks with a single-component polymer are disclosed. These hardmasks provide high optical homogeneity and high chemical homogeneity, thus minimizing or avoiding negative stochastic effects on feature critical dimension. The hardmasks further provide low porosity, higher density, and high silicon content and improve performance factors such as LER/LWR, defectivity, uniformity, and DoF.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 77/50 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone
C08G 77/52 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone contenant des cycles aromatiques
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
51.
CHEMICALLY HOMOGENEOUS SILICON HARDMASKS FOR LITHOGRAPHY
Silicon hardmasks with a single-component polymer are disclosed. These hardmasks provide high optical homogeneity and high chemical homogeneity, thus minimizing or avoiding negative stochastic effects on feature critical dimension. The hardmasks further provide low porosity, higher density, and high silicon content and improve performance factors such as LER/LWR, defectivity, uniformity, and DoF.
Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.
A method is described for debonding a carrier and device substrate using a high-intensity, pulsed, broadband light system that is suitable for wafer-level packaging applications. The carrier substrate is a transparent wafer with a light absorbing layer on one side of the wafer. This method utilizes the high intensity light to rapidly heat up the light absorbing layer to decompose or melt a bonding material layer that is adjacent to the light absorbing layer. After exposure to light, the carrier substrate can be lifted off the surface of the device wafer with little or no force.
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; chemical compositions,
namely, bonding and release layered compositions used in the
manufacture of microelectronic products; chemical
compositions, namely, dielectric coating compositions used
in the manufacture of microelectronic products.
55.
PHOTONIC DEBONDING FOR WAFER-LEVEL PACKAGING APPLICATIONS
A method is described for debonding a carrier and device substrate using a high-intensity, pulsed, broadband light system that is suitable for wafer-level packaging applications. The carrier substrate is a transparent wafer with a light absorbing layer on one side of the wafer. This method utilizes the high intensity light to rapidly heat up the light absorbing layer to decompose or melt a bonding material layer that is adjacent to the light absorbing layer. After exposure to light, the carrier substrate can be lifted off the surface of the device wafer with little or no force.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The permanent materials are thermally stable to at least 300°C, cure using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least 5 years, preferably at least 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types. A chip-to-chip, chip-to-wafer, and/or wafer-to-wafer bonding method utilizing this material is also described.
Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The permanent materials are thermally stable to at least 300° C., cure using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least 5 years, preferably at least 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types. A chip-to-chip, chip-to-wafer, and/or wafer-to-wafer bonding method utilizing this material is also described.
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A high-temperature-stable spin-on-carbon ("SOC") material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SCI resistant, especially on TiN and SiOx surfaces.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
59.
SOLUBLE POLYIMIDES AND DIIMIDES FOR SPIN-ON CARBON APPLICATIONS
A high-temperature-stable spin-on-carbon (“SOC”) material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SC1 resistant, especially on TiN and SiOx surfaces.
The materials and methods disclosed can be used for applications such as temporary bond and debond of semiconductor and display substrates. These materials have sufficiently low melt rheologies to be used as a bonding layer and can crosslink/cure to allow for reduction in material flow over long periods of time. This class of materials also incorporates the ability to be used as a single-layer system for debonding purposes and typically uses laser debonding for its release mechanism. These materials also allow for solvent cleanability using very mild acidic conditions instead of the typical harsh conditions used on curable layers.
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
C09J 4/00 - Adhésifs à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable
C09J 179/00 - Adhésifs à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement de l'azote, avec ou sans oxygène ou carbone, non prévus dans les groupes
The materials and methods disclosed can be used for applications such as temporary bond and debond of semiconductor and display substrates. These materials have sufficiently low melt rheologies to be used as a bonding layer and can crosslink/cure to allow for reduction in material flow over long periods of time. This class of materials also incorporates the ability to be used as a single-layer system for debonding purposes and typically uses laser debonding for its release mechanism. These materials also allow for solvent cleanability using very mild acidic conditions instead of the typical harsh conditions used on curable layers.
C08G 73/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant de l'azote, avec ou sans oxygène ou carbone, non prévus dans les groupes
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
C09J 179/00 - Adhésifs à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement de l'azote, avec ou sans oxygène ou carbone, non prévus dans les groupes
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A copolymer of polytetrafluoroethylene and a perfluoro acid (e.g., Nafion™) is neutralized by a base to yield its corresponding salt, and a high-boiling-point compatible solvent is used as a substituting solvent, with the original, low-boiling-point solvent being removed by rotor evaporation. The resulting dispersion is screen printable, and its viscosity is controllable by adjusting its solids content. This screen-printable salt dispersion is especially useful in printed electronics applications such as sensors.
C08L 27/18 - Homopolymères ou copolymères du tétrafluoro-éthylène
C08J 3/02 - Production de solutions, dispersions, latex ou gel par d'autres procédés que ceux utilisant les techniques de polymérisation en solution, en émulsion ou en suspension
A copolymer of polytetrafluoroethylene and a perfluoro acid (e.g., Nafion™) is neutralized by a base to yield its corresponding salt, and a high-boiling-point compatible solvent is used as a substituting solvent, with the original, low-boiling-point solvent being removed by rotor evaporation. The resulting dispersion is screen printable, and its viscosity is controllable by adjusting its solids content. This screen-printable salt dispersion is especially useful in printed electronics applications such as sensors.
C09D 11/106 - Encres d’imprimerie à base de résines artificielles contenant des composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
B41M 1/12 - Impression au stencilImpression à trame de soie
B41M 1/30 - Impression sur d'autres surfaces que le papier ordinaire sur matières plastiques organiques, corne ou matières analogues
B41M 5/00 - Procédés de reproduction ou méthodes de reproduction ou de marquageMatériaux en feuilles utilisés à cet effet
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; Chemical compositions, namely, bonding and release layered compositions used in the manufacture of microelectronic products; chemical compositions, namely, dialectric coating compositions used in the manufacture of microelectronic products
Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
67.
Selective liquiphobic surface modification of substrates
Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.
Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle 70°). Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Temperature sensors; pressure sensors; humidity sensors;
moisture sensors; sensor chips for scientific use; sensors
for the determination of properties of liquids; vibration
sensors; sensors for measuring gas properties, not for
medical use; sensors for measuring water properties, not for
medical use; sensors for measuring varying angles of
deflection, not for medical use; sensors for measuring
moisture, not for medical use; downloadable computer
software for the collecting, reading and processing data
sent from sensors.
New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 77/14 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
C08G 77/18 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène à des groupes alcoxyle ou aryloxyle
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The materials are thermally stable to at least about 300°C, curable using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least about 5 years, preferably at least about 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types.
09 - Appareils et instruments scientifiques et électriques
Produits et services
(1) Temperature sensors; pressure sensors; humidity sensors; moisture sensors; sensor chips for scientific use namely sensing temperature, humidity, flex/strain and detecting analytes in water and in air; sensors for the determination of properties of liquids; vibration sensors; sensors for measuring gas properties, not for medical use; sensors for measuring water properties, not for medical use; sensors for measuring varying angles of deflection, not for medical use; sensors for measuring moisture, not for medical use; downloadable computer software for the collecting, reading and processing data sent from sensors, namely resistance, impedance, conductivity measurement.
74.
Cyclic sulfonate compounds as photoacid generators in resist applications
Novel photoacid generator compounds are provided. Compositions that include the novel photoacid generator compounds are also provided. The present disclosure further provides methods of making and using the photoacid generator compounds and compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.
C07C 309/10 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy éthérifiés liés au squelette carboné avec l'atome d'oxygène d'au moins un des groupes hydroxy éthérifiés lié de plus à un atome de carbone acyclique
09 - Appareils et instruments scientifiques et électriques
Produits et services
Temperature sensors; pressure sensors; humidity sensors; moisture sensors; sensor chips for scientific use; sensors for the determination of properties of liquids; vibration sensors; sensors for measuring gas properties, not for medical use; sensors for measuring water properties, not for medical use; sensors for measuring varying angles of deflection, not for medical use; sensors for measuring moisture, not for medical use; downloadable computer software for the collecting, reading and processing data sent from sensors
76.
POLY(CYANOCINNAMATE)S FOR STRUCTURAL AND OPTICAL APPLICATIONS
Methods of preparing poly(cyanocinnamate)s are provided, with those involving mild conditions and resulting in a soluble polymer that is stable at room temperature and can be coated onto microelectronic substrates. The polymer includes at least one bis(cyanoacetate) monomer and at least one aromatic dialdehyde monomer. The polymer exhibits good thermal and structural properties and high absorbance in the UV range.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
77.
Poly(cyanocinnamate)s for structural and optical applications
Methods of preparing poly(cyanocinnamate)s are provided, with those involving mild conditions and resulting in a soluble polymer that is stable at room temperature and can be coated onto microelectronic substrates. The polymer includes at least one bis(cyanoacetate) monomer and at least one aromatic dialdehyde monomer. The polymer exhibits good thermal and structural properties and high absorbance in the UV range.
Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.
Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Novel block copolymers ("BCPs") having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly ("DSA") processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.
C08F 293/00 - Composés macromoléculaires obtenus par polymérisation sur une macromolécule contenant des groupes capables d'amorcer la formation de nouvelles chaînes polymères rattachées exclusivement à une ou aux deux extrémités de la macromolécule de départ
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 212/32 - Monomères contenant un seul radical aliphatique non saturé contenant plusieurs cycles
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
85.
Gradient block copolymers for directed self-assembly
Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.
C08L 53/00 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carboneCompositions contenant des dérivés de tels polymères
C08F 20/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 26/06 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocycle contenant de l'azote par un hétérocycle contenant de l'azote
C08G 63/06 - Polyesters dérivés soit d'acides hydroxycarboxyliques, soit d'acides polycarboxyliques et de composés polyhydroxylés dérivés des acides hydroxycarboxyliques
C08F 20/26 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
86.
Laser-releasable bonding materials for 3-D IC applications
Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
C08K 3/00 - Emploi de substances inorganiques en tant qu'adjuvants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
87.
LASER-RELEASABLE BONDING MATERIALS FOR 3-D IC APPLICATIONS
Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.
B32B 7/06 - Liaison entre couches permettant une séparation sans difficultés
B32B 27/28 - Produits stratifiés composés essentiellement de résine synthétique comprenant des copolymères de résines synthétiques non complètement couverts par les sous-groupes suivants
B32B 27/20 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers utilisant des charges, des pigments, des agents thixotropiques
C09J 171/08 - Polyéthers dérivés de composés hydroxylés ou de leurs dérivés métalliques
C09J 11/06 - Additifs non macromoléculaires organiques
C09J 5/04 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant une application séparée de produits adhésifs sur les différentes surfaces à joindre
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
88.
Environmentally sealed, reusable connector for printed flexible electronics
An environmentally sealed connector for connecting a spring-loaded terminal to a flexible circuit includes a spring-loaded terminal and a connector cap having a terminal cavity receiving a portion of the spring-loaded terminal therein in order to electrically couple the spring-loaded terminal to the flexible circuit. A connector base is releasably coupled to the connector cap and covers the terminal cavity and the portion of the spring-loaded terminal therein. An elastic member is disposed between the connector cap and the connector base in sealing engagement therewith and surrounds the terminal cavity and the portion of the spring-loaded terminal.
H01R 13/502 - SoclesBoîtiers composés de différentes pièces
H01R 12/59 - Connexions fixes pour circuits imprimés flexibles, câbles plats ou à rubans ou structures similaires
H01R 12/53 - Connexions fixes pour circuits imprimés rigides ou structures similaires se raccordant à des câbles à l'exclusion des câbles plats ou à rubans
H01R 13/52 - Boîtiers protégés contre la poussière, les projections, les éclaboussures, l'eau ou les flammes
H01R 12/65 - Connexions fixes pour circuits imprimés flexibles, câbles plats ou à rubans ou structures similaires caractérisées par les bornes
89.
ENVIRONMENTALLY SEALED, REUSABLE CONNECTOR FOR PRINTED FLEXIBLE ELECTRONICS
An environmentally sealed connector for connecting a spring-loaded terminal to a flexible circuit includes a spring-loaded terminal and a connector cap having a terminal cavity receiving a portion of the spring-loaded terminal therein in order to electrically couple the spring-loaded terminal to the flexible circuit. A connector base is releasably coupled to the connector cap and covers the terminal cavity and the portion of the spring-loaded terminal therein. An elastic member is disposed between the connector cap and the connector base in sealing engagement therewith and surrounds the terminal cavity and the portion of the spring-loaded terminal.
0 as low as 12 nm for lamellar-structured BCPs and hole/pillar size as small as 6 nm for cylinder-structured BCPs. The Tg of the BCPs can also be tuned to lower than those of PS-b-PMMA standards. The enhanced polymer chain mobility resulting from the decreased Tg of the block copolymer may help with improving the kinetics of BCP self-assembly during the thermal annealing.
C08G 81/02 - Composés macromoléculaires obtenus par l'interréaction de polymères en l'absence de monomères, p. ex. polymères séquencés au moins un des polymères étant obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carbone
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
C08F 293/00 - Composés macromoléculaires obtenus par polymérisation sur une macromolécule contenant des groupes capables d'amorcer la formation de nouvelles chaînes polymères rattachées exclusivement à une ou aux deux extrémités de la macromolécule de départ
C08F 2/38 - Polymérisation utilisant des régulateurs, p. ex. des agents d'arrêt de chaîne
91.
HIGH-CHI BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY
The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains ("PS-b-P(MMA-LA)"). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the Tg.
B32B 27/28 - Produits stratifiés composés essentiellement de résine synthétique comprenant des copolymères de résines synthétiques non complètement couverts par les sous-groupes suivants
C08G 81/02 - Composés macromoléculaires obtenus par l'interréaction de polymères en l'absence de monomères, p. ex. polymères séquencés au moins un des polymères étant obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carbone
C08F 299/04 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés à partir de polyesters
C08F 20/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 20/20 - Esters des alcools polyhydriques ou des phénols polyhydriques
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
C08L 53/00 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carboneCompositions contenant des dérivés de tels polymères
92.
High-χ block copolymers for directed self-assembly
C08G 81/00 - Composés macromoléculaires obtenus par l'interréaction de polymères en l'absence de monomères, p. ex. polymères séquencés
C08G 81/02 - Composés macromoléculaires obtenus par l'interréaction de polymères en l'absence de monomères, p. ex. polymères séquencés au moins un des polymères étant obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carbone
C08F 293/00 - Composés macromoléculaires obtenus par polymérisation sur une macromolécule contenant des groupes capables d'amorcer la formation de nouvelles chaînes polymères rattachées exclusivement à une ou aux deux extrémités de la macromolécule de départ
G03F 7/16 - Procédés de couchageAppareillages à cet effet
C08L 87/00 - Compositions contenant des composés macromoléculaires non spécifiés, obtenus autrement que par des réactions de polymérisation ne faisant intervenir que des liaisons non saturées carbone-carbone
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
C08L 53/00 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carboneCompositions contenant des dérivés de tels polymères
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
B32B 27/28 - Produits stratifiés composés essentiellement de résine synthétique comprenant des copolymères de résines synthétiques non complètement couverts par les sous-groupes suivants
93.
Spin-on carbon compositions for lithographic processing
The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.
G03F 7/26 - Traitement des matériaux photosensiblesAppareillages à cet effet
B32B 33/00 - Produits stratifiés caractérisés par des propriétés particulières ou des caractéristiques de surface particulières, p. ex. par des revêtements de surface particuliersProduits stratifiés conçus pour des buts particuliers non couverts par une seule autre classe
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
C09D 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
C08G 73/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant de l'azote, avec ou sans oxygène ou carbone, non prévus dans les groupes
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
94.
CHEMICALLY PATTERNED GUIDE LAYERS FOR USE IN CHEMOEPITAXY DIRECTING OF BLOCK CO-POLYMERS
The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.
The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.
C08F 120/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
B05D 1/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces
C08L 53/00 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carboneCompositions contenant des dérivés de tels polymères
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
96.
ENERGETIC PULSE CLEARING OF ENVIRONMENTALLY SENSITIVE THIN-FILM DEVICES
A process and electronic hardware and software system for rapidly heating and cooling an active sensing layer of a gas sensor is provided. A series of high-energy pulses is run through a CNT electrically-active layer, heating the layer to varying temperatures. The influence by various gases on the electrical conductivity of the layer can be used to identify gases (e.g., water vapor, alcohol, methane, O2, CO2, and CO). Advantageously, the same structure can also be used as a nanoheater, either within or outside the context of the gas sensor. The device can acquire a unique gas spectra in seconds, and thus accurately determine gas type and mixtures of gases based on a library of known spectra.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de l'absorption d'un fluideRecherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
97.
Energetic pulse clearing of environmentally sensitive thin-film devices
2, and CO). Advantageously, the same structure can also be used as a nanoheater, either within or outside the context of the gas sensor. The device can acquire a unique gas spectra in seconds, and thus accurately determine gas type and mixtures of gases based on a library of known spectra.
G01N 27/14 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps chauffé électriquement dépendant de variations de température
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de l'absorption d'un fluideRecherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
98.
Polymer film stencil process for fan-out wafer-level packaging of semiconductor devices
The present invention provides stencil-based processes for fan-out wafer-level packaging (“FOWLP”) that addresses the limitations associated with prior art over-molding of dies. In the inventive process, a temporary carrier is coated with a release layer and curable adhesive backing layer. A die stencil film is then laminated to the coated carrier, and the dies are placed inside pre-formed cavities created in the laminated stencil. The gaps between the dies and the stencil are filled with a curable polymeric material, and a redistribution layer is constructed according to conventional processes. This process results in better repeatability, lower bowing in the carrier, and enhanced downstream processing.
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
Dielectric materials with optimal mechanical properties for use in laser ablation patterning are proposed. These materials include a polymer selected from the group consisting of polyureas, polyurethane, and polyacylhydrazones. New methods to prepare suitable polyacylhydrazones are also provided. Those methods involve mild conditions and result in a soluble polymer that is stable at room temperature and can be incorporated into formulations that can be coated onto microelectronic substrates. The dielectric materials exhibit high elongation, low CTE, low cure temperature, and leave little to no debris post-ablation.
Dielectric materials with optimal mechanical properties for use in laser ablation patterning are proposed. These materials include a polymer selected from the group consisting of polyureas, polyurethane, and polyacylhydrazones. New methods to prepare suitable polyacylhydrazones are also provided. Those methods involve mild conditions and result in a soluble polymer that is stable at room temperature and can be incorporated into formulations that can be coated onto microelectronic substrates. The dielectric materials exhibit high elongation, low CTE, low cure temperature, and leave little to no debris post-ablation.
B41C 1/10 - Préparation de la forme ou du cliché pour l'impression lithographiqueFeuilles-mère pour le report d'une image sur la forme
C07C 65/21 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes
C07C 65/30 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes —CHO
C07C 243/12 - Hydrazines ayant des atomes d'azote de groupes hydrazine liés à des atomes de carbone acycliques
C08G 69/38 - Polyamides préparés à partir d'aldéhydes et de polynitriles
C08G 18/76 - Polyisocyanates ou polyisothiocyanates cycliques aromatiques
