A transistor includes an amorphous substrate, a first buffer layer over the amorphous substrate, a first nitride semiconductor layer in an island-shaped pattern over the first buffer layer, a second nitride semiconductor layer over the first nitride semiconductor layer so as to cover the first nitride semiconductor layer, and a gate electrode layer over the second nitride semiconductor layer so as to overlap the first nitride semiconductor layer.
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
H10D 62/85 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe III-V, p. ex. GaAs
According to one embodiment, a display device manufacturing method includes forming a lower electrode, forming an insulating layer on the lower electrode, forming a partition including a lower portion provided above the insulating layer and an upper portion having an end portion protruding relative to a side surface of the lower portion, providing a resist covering the partition on the insulating layer, forming a rib and a pixel aperture surrounded by the rib by removing a portion exposed from the resist of the insulating layer by etching, and forming an organic layer covering the lower electrode through the pixel aperture and emitting light in response to application of a voltage. The end portion of the upper portion is exposed from the resist in the etching.
An electro-optical device is provided and includes a plurality of first signal lines extending in a first direction on a substrate; a plurality of second signal lines extending in a second direction on the substrate, the second direction intersecting the first direction; a pixel area in which a plurality of pixel electrodes are disposed; an outer peripheral edge of the pixel area having a curved portion or a bent portion; and a first circuit block, a second circuit block, and a third circuit block arranged along the outer peripheral edge, wherein the second circuit block is arranged between the first circuit block and the first circuit block, and a first gap between the first circuit bock and the second circuit block is different from a second gap between the second circuit block and the third circuit block.
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
G09G 3/3266 - Détails des circuits de commande pour les électrodes de balayage
G09G 3/3275 - Détails des circuits de commande pour les électrodes de données
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/85 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples composants passifs, p. ex. des résistances, des condensateurs ou des inducteurs caractérisés par des composants passifs uniquement
H10D 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
The displacement between a TFT substrate and a counter substrate and the cut of an alignment film caused by a columnar spacer are prevented. A liquid crystal display device includes: a TFT substrate including a scanning line extending in a first direction, a picture signal line extending in a second direction, a pixel electrode formed in a region surrounded by the scanning line and the picture signal line, and a common electrode formed as opposed to the pixel electrode through an insulating film; a counter substrate disposed as opposed to the TFT substrate and having a spacer; and a liquid crystal sandwiched between the substrates. A common metal interconnection is formed to cover the picture signal line or the scanning line, and stacked on the common electrode. A through hole is formed on the common metal interconnection. The tip end of the spacer is disposed inside the through hole.
According to one embodiment, a display device includes a substrate, first and second insulating layers, first and second pixel electrodes, first and second organic layers, first and second feed lines, first and second partitions, and a common electrode including first and second parts covering the first and second organic layers. The first organic layer is between the partitions. The second feed line and the second partition are located between the organic layers. The partitions are shaped such that a width of an upper part is greater than a width of a lower part. The first part is in contact with the first feed line between the first partition and the first organic layer.
A face authentication device includes a monocular camera that includes a coded aperture and captures a face of a user through the coded aperture to acquire a captured image of the face of the user, a depth estimation unit that estimates a depth in at least a part of the captured image by an operation corresponding to the coded aperture, a depth feature information generating unit that generates depth feature information indicating a feature of the face of the user in a depth direction based on the depth, and a depth face authentication unit that authenticates the user based on the depth feature information.
According to one embodiment, an electronic device includes a panel, a circuit board, a first flexible wiring board, and a first IC chip. The panel includes a curved display surface, a mounting portion curved, and a plurality of first pads disposed at intervals on the mounting portion. The circuit board is a plate-like. The first flexible wiring board has a first end portion mounted on the plurality of first pads and a second end portion connected to the circuit board. The first IC chip is mounted on the mounting portion and electrically connected to the first flexible wiring board. A first center of the first flexible wiring board is closer to a third center of the panel than a second center of the first IC chip in plan view.
According to an aspect, an imaging system includes: a display device that includes a display panel on which a plurality of pixels are arranged in a first direction and a second direction intersecting the first direction and a light source configured to emit light to a side surface of the display panel; and an imaging device that is provided with the display panel interposed between the imaging device and a subject and is configured to capture an image of the subject transmitted through the display panel. The display device is configured to have: a first period in which pixel data is written to the pixels; and a second period in which the light source emits the light after the first period. The imaging device is configured to generate imaged data of the subject using exposure data acquired during the first period.
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande munis de moyens d'éclairage
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/71 - Capteurs à dispositif à couplage de charge [CCD]Registres de transfert de charge spécialement adaptés aux capteurs CCD
An optical device includes an optical element including a plurality of liquid crystal cells each including first and second substrates. In each of the plurality of liquid crystal cells, a first electrode and a second electrode on the first substrate respectively include a first straight line portion extending at an angle of α degrees (0<α<90) with respect to a first direction and a second straight line portion extending at an angle of β degrees (0<β<90 and β≠α) with respect to the first direction, and a third electrode and a fourth electrode on the second substrate respectively include a third straight line portion extending at an angle of (90+α) degrees with respect to the first direction and a fourth straight line portion extending at an angle of (90+β) degrees with respect to the first direction.
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
A light-emitting element includes a pair of electrodes, and a light-emitting layer between the pair of electrodes, wherein the light-emitting layer includes a first host material, a second host material, and a first light-emitting material exhibiting thermally activated delayed fluorescence, a concentration of the first host material is greater than a concentration of the second host material in the light-emitting layer, a band gap of the first host material is larger than a band gap of the second host material, a singlet excitation energy level of the first light-emitting material is lower than a singlet excitation energy level of the first host material, and a triplet excitation energy level of the second host material is lower than a triplet excitation energy level of the first host material.
H10K 101/30 - Valeurs d'énergie de la plus haute orbitale moléculaire occupée [HOMO], de la plus basse orbitale moléculaire inoccupée [LUMO] ou de Fermi
H10K 101/70 - Conversion descendante, p. ex. par fission singulière
A semiconductor device according to an embodiment of the present invention includes: a first semiconductor layer; a first gate electrode facing the first semiconductor layer; a second gate electrode facing the first semiconductor layer and supplied with the same voltage as the first gate electrode; a first gate insulating layer between the first semiconductor layer and the first gate electrode, and between the first semiconductor layer and the second gate electrode; a second semiconductor layer sandwiching the first gate electrode with the first semiconductor layer; a third gate electrode facing the second semiconductor layer on an opposite side to the first gate electrode with respect to the second semiconductor layer, and overlapping the first gate electrode in a plan view; and a second gate insulating layer between the second semiconductor layer and the third gate electrode.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
According to one embodiment, a flexible substrate including, an insulating base including first strip portions, second strip portions, and island-shaped portions each located at an intersection between the first strip portions and the second strip portions, electrical elements overlapping the island-shaped portions, respectively, scanning lines extending while overlapping the first strip portions, respectively, signal lines extending while overlapping the second strip portions, respectively, a first organic insulating film, a second organic insulating film, a stopper layer located between the first and second organic insulating film, and a barrier layer located on the second organic insulating film.
According to one embodiment, in a display device, the display panel includes pixels each including first pixels and second pixels, each of the first pixels has a transparent layer that has a refractive index lower than those of a first substrate and a second substrate and is in contact with a common electrode, each of the second pixels includes a first insulating layer that has a refractive index higher than that of the transparent layer and is in contact with the common electrode.
G02F 1/1334 - Dispositions relatives à la structure basées sur des cristaux liquides dispersés dans un polymère, p. ex. cristaux liquides micro-encapsulés
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A liquid crystal panel includes two substrates and a liquid crystal between the two substrates. A first substrate as one of the two substrates includes: a potential gradient forming section having an outer periphery edge having a circular shape; a first electrode provided on an inner periphery side of the potential gradient forming section; a second electrode provided on an outer periphery side of the potential gradient forming section and having a ring-like shape; a first transmission section provided with a potential; a second transmission section provided with another potential; a first contact coupling the first electrode and the first transmission section; and a second contact coupling the second electrode and the second transmission section. The potential gradient forming section is made of a conductor having an electrical resistance higher than those of the first and second electrodes. A plurality of the second contacts are provided for the second electrode.
A reflecting device includes a plurality of first patch electrodes, a plurality of second patch electrodes having a size different from a size of the first patch electrodes, a ground electrode opposing the plurality of first patch electrodes and the plurality of second patch electrodes and separated from the plurality of first patch electrodes and the plurality of second patch electrodes, and a liquid crystal layer between the plurality of first patch electrodes and the plurality of second patch electrodes and the ground electrode, wherein the plurality of first patch electrodes and the plurality of second patch electrodes are arranged alternately in a first direction or a second direction intersecting the first direction, and each first patch electrode is adjacent to each second patch electrode in the first direction or the second direction.
According to one embodiment, an optical control element includes a plurality of lens forming regions along a first direction and a second direction orthogonal to the first direction, each of the lens forming regions includes an annularly shaped second electrode and a circularly shaped first electrode provided on an inner side of the second electrode, a plurality of first wiring lines connected to the first electrodes each include a first stem portion extending in a zigzag shape along the second direction and a plurality of first branch portions extending from the first stem, and each of the first branch portions overlap the plurality of first electrodes, respectively.
A detection device includes a sensor circuit provided with a first photodiode in a semiconductor layer, and a signal detector configured to acquire a detection value corresponding to a signal output from the sensor circuit. The signal detector includes a first detection circuit coupled to one end of the first photodiode, a first switch circuit configured to apply a power supply potential to another end of the first photodiode, and a second switch circuit configured to short both ends of the first photodiode.
A display device includes: a resin layer on the circuit layer including a groove surrounding and separating a display area; light-emitting elements on an upper surface of the resin layer so as to emit light with luminances controlled by the currents; a sealing layer covering the light-emitting elements; a second substrate above the sealing layer; a sealing material provided between the sealing layer and the second substrate so as to surround the display area and the groove; and a filling layer surrounded by the sealing material between the sealing layer and the second substrate. The groove is formed along a line describing a shape that is inscribed in a rectangle and not in contact with corners of the rectangle as viewed in a direction vertical to the upper surface of the resin layer.
A method for inspecting a reflecting device, which has a plurality of reflecting elements arrayed in a matrix, each of the plurality of reflecting elements comprises a patch electrode, a common electrode on a back side of the patch electrode, and a liquid crystal layer between the patch electrode and the common electrode, a first voltage V1 is applied between one of the plurality of patch electrodes and the common electrode, and whether the reflecting element is good or bad is determined based on changes in a frame region that appears around a periphery of one of the plurality of patch electrodes in a top view when a voltage is applied between one of the plurality of patch electrodes and the common electrode.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides
G01R 29/08 - Mesure des caractéristiques du champ électromagnétique
According to an aspect, a detection device includes: a plurality of photodiodes provided on a substrate; a plurality of light emitters arranged so as to face the photodiodes; and a collimating lens that is located between the photodiodes and the light emitters and is configured to emit parallel light toward the photodiodes. At least one of the light emitters is configured to be brought into a lit state and other of the light emitters are configured to be brought into an unlit state. The collimating lens is configured to emit the parallel light at a different emission angle depending on a position of the light emitter in the lit state.
The present invention provides a fluorescence detection device that makes it possible to easily reduce the size of the entire device. Provided is a fluorescence detection device wherein: a light suppression layer has a plurality of openings and has disposed therein a plurality of accommodation sections which are each surrounded by a side wall of a through hole and each accommodate a sample; the openings are disposed at positions overlapping the accommodation sections; and a light-receiving element is disposed so as to surround the accommodation sections in plan view.
The incident surface is the inner surface of a recess including a bottom surface and an inwardly convex inner side. A tangent line on the free-form curve forms a smaller angle with the optical axis at a point closer to the bottom surface and a larger angle with the optical axis at a point farther from the bottom surface. The free-form curve has a curvature that is not constant. The curvature is maximized at a depth of one-third or less of a depth of the recess. The light enters the bottom surface only at a light distribution angle of three degrees. The light enters the inner side at a light distribution angle of more than three degrees. Light incident on the bottom surface exits through the emitting surface. Light incident on the inner side reflects off the outer side and exits through the emitting surface.
A display device includes a first pixel including a transistor having an oxide semiconductor layer, a first gate wiring, and a first source wiring. The first gate wiring includes a first part of a first conductive, and extends in a first direction. The first source wiring includes a first part of a second conductive layer and a first part of a third conductive layer connected to the first part of the second conductive layer, and extends in a second direction intersecting the first direction. A thickness of the second conductive layer is thinner than a thickness of the first conductive layer and thinner than a thickness of the third conductive layer.
It is possible to reduce a size of a lower frame region to ensure a wiring corrosion margin equivalent to that of a conventional technique. In a display device, a video signal wiring arranged in the lower frame region includes, in a region between a terminal section (terminal) and a video signal line, a first wiring formed on a first wiring layer and having one end connected to the terminal section to which a video signal line driving circuit is connected, a second wiring formed on a second wiring layer different from the first wiring layer and having one end connected to the other end of the first wiring, and a third wiring formed on the first wiring layer and having one end connected to the other end of the second wiring. The other end of the third wiring is connected to the video signal line via a fourth wiring formed on the second wiring layer, and the first wiring layer is formed on the side closer to an array substrate than to the second wiring layer.
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1339 - JointsÉléments d'espacementScellement des cellules
G02F 1/1345 - Conducteurs connectant les électrodes aux bornes de la cellule
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
A driving method of an intelligent reflecting surface having a plurality of reflecting elements arranged in a matrix, the method includes dividing the plurality of reflecting elements arranged in the matrix into a first region that controls an amount of phase change for each row of the plurality of reflecting elements arrayed in a row direction and a second region that controls an amount of phase change for every two adjacent rows of a plurality of reflecting elements arrayed in the row direction, and driving each of the plurality of reflecting elements belonging to the first region
Disclosed is a method for inspecting a light-emitting element, the method including: forming a buffer layer over an amorphous substrate; forming, over the buffer layer, an n-type cladding layer, an emission layer, and a p-type cladding layer each including an inorganic semiconductor to form a plurality of semiconductor layers arranged in a matrix form having a plurality of rows and a plurality of columns; forming an anode and a cathode over each of the plurality of semiconductor layers to form a plurality of light-emitting elements; and acquiring at least one of a photoluminescence property or an electroluminescence property of the plurality of light-emitting elements using a first detector and a second detector. The buffer layer has a function to promote crystallization of the semiconductor layers. The photoluminescence property is acquired before forming the anode and the cathode. The electroluminescence property is acquired after forming the anode and the cathode.
G01N 21/66 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité électriquement, p. ex. par électroluminescence
According to an aspect, a detection device includes: a photodiode provided on a substrate; a light source disposed so as to face the photodiode; and a liquid crystal panel disposed between the photodiode and the light source in a direction orthogonal to the substrate. The liquid crystal panel includes a plurality of pixels. In plan view, the photodiode has a size larger than a size of each of the pixels, and the photodiode is disposed in a position overlapping the pixels. The liquid crystal panel is configured to bring at least one of the pixels overlapping the photodiode into a transmitting state and bring another of the pixels into a non-transmitting state.
H04N 25/75 - Circuits pour fournir, modifier ou traiter des signaux d'image provenant de la matrice de pixels
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A display device according to an embodiment of the present invention includes: a base material including a display region having a plurality of pixels and a frame region; a lower electrode provided in each of the plurality of pixels; an organic material layer arranged on the lower electrode; an upper electrode arranged on the organic material layer and covering the display region; a conductor portion provided in the frame region and connected to the upper electrode; and a rib provided on the conductor portion, wherein the upper electrode is arranged on the conductor portion via the rib, a first contact portion where the upper electrode and the conductor portion contact each other is located in the frame region, the rib has a side surface located at an opposite side of the first contact portion from the display region, and an end portion of the upper electrode faces the side surface.
A film formation apparatus includes a vacuum chamber, a substrate support portion for supporting a substrate, a target support portion for supporting a target containing nitrogen and gallium, a sputtering gas supply unit for supplying a sputtering gas, a sputtering power source for applying a voltage to the target, a first radical supply source for supplying nitrogen radicals and hydrogen radicals, and a control unit. The control unit controls the sputtering gas supply unit, the sputtering power source, and the first radical supply source so that a first period in which the sputtering gas, the nitrogen radicals, and the hydrogen radicals are supplied to the vacuum chamber and a voltage is applied to the target and a second period in which the nitrogen radicals and the hydrogen radicals are not supplied to the vacuum chamber and a voltage is applied to the target are repeated.
C03C 17/22 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par d'autres matières inorganiques
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
A film formation apparatus includes a vacuum chamber, a substrate support portion and a target support portion provided in the vacuum chamber, a sputtering gas supply unit for supplying a sputtering gas to the vacuum chamber, a sputtering power supply, a first radical supply source connected to the vacuum chamber and configured to be capable of supplying at least one of nitrogen radicals generated from an N2 gas and hydrogen radicals generated from an H2 gas to the vacuum chamber, a second radical supply source connected to the vacuum chamber and configured to be capable of supplying SiH3 radicals to the vacuum chamber, and a control unit configured to control the sputtering gas supply unit, the sputtering power supply, the first radical supply source, and the second radical supply source.
According to one embodiment, a display device includes an array substrate, a first cover member and a first adhesive layer. The array substrate includes first and second main surfaces and a first side surface. The first cover member includes third and fourth main surfaces and a second side surface. The first adhesive layer attaches the first and third main surfaces. The array substrate further includes a display area and a mounting area between the first side surface and the display area. The first cover member includes a protruding portion which protrudes relative to the first side surface.
G02F 1/137 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides caractérisés par l'effet électro-optique ou magnéto-optique, p. ex. transition de phase induite par un champ, effet d'orientation, interaction entre milieu récepteur et matière additive ou diffusion dynamique
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1334 - Dispositions relatives à la structure basées sur des cristaux liquides dispersés dans un polymère, p. ex. cristaux liquides micro-encapsulés
G02F 1/1339 - JointsÉléments d'espacementScellement des cellules
A display device can include a base, a plurality of pixels arranged in a display area on the base, and a data signal line supplying a data signal to each of the plurality of pixels. Each of the plurality of pixels can include a pixel circuit including a plurality of transistors and a light emitting element driven by the pixel circuit. The pixel circuit can drive the light emitting element to emit light in time division. The first transistor can be connected to the data signal line, among the plurality of transistors including the pixel circuit, can be an oxide transistor.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
A display device can include a base, a plurality of pixels in a matrix along first and second directions intersecting each other in a display area on the base, control signal lines to supply a control signal to the pixels, and power supply lines to supply an initialization voltage to the pixels. Each pixel can include a pixel circuit having a plurality of transistors and a light emitting element drivable by the pixel circuit. The plurality of transistors can include a first transistor between the power supply line and the light emitting element. The first transistor can be controlled based on the control signal. The control signal lines, which can extend to connect to the plurality of pixels, can be arranged in the second direction. The power supply lines, which can extend to connect to the plurality of pixels, can be arranged in the first direction.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
A display device includes a substrate; a plurality of pixels provided on the substrate; and a plurality of inorganic light emitting elements provided on each of the pixels. The inorganic light emitting elements each include a semiconductor substrate having a first face facing the substrate and a second face provided in a convex shape on a side opposite from the first face; and a plurality of semiconductor nanowires provided on the first face, the semiconductor nanowires extending in a direction perpendicular to the first face.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
H10H 20/811 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel
H10H 20/812 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel au sein des régions électroluminescentes, p. ex. structures de confinement quantique
H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
According to an aspect, a detection device includes: a light source; a plurality of optical sensors that are arranged so as to be capable of receiving light of the light source and have light-receiving areas different in size; a detection circuit that is electrically coupled to each of the optical sensors and configured to detect waveform data that allows an amount of received light of each of the optical sensors to be identified; and a control circuit configured to select at least one piece of the waveform data having waveform amplitude that satisfies a selection condition from a plurality of pieces of the waveform data detected by the optical sensors.
According to an aspect, a detection device includes: a plurality of optical sensors arranged in a detection area; a light source configured to emit light to the optical sensors; an analog front-end (AFE) circuit configured to acquire a detection value of each of the optical sensors; and a signal processing circuit configured to acquire predefined biometric information based on first time-domain data obtained by acquiring the detection values in chronological order. The signal processing circuit is configured to: convert the first time-domain data into a time-domain matrix and perform singular value decomposition on the time-domain matrix, and inversely calculate second time-domain data based on a predetermined singular value among a plurality of singular values obtained as a result of the singular value decomposition; and acquire the biometric information that changes in chronological order as image information using the second time-domain data.
A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
To provide a display device with a sensor in which the deterioration of display quality is suppressed even when the sensor wires are superimposed on the respective slits of two detection electrodes disposed side by side. The display device with a sensor includes a plurality of detection electrodes, a plurality of sensor wires, a plurality of pixels, a plurality of scanning lines, and a plurality of signal lines on a first insulating substrate. The detection electrodes are arrayed in a matrix (row-column configuration) in a first direction and a second direction. The sensor wires and the signal lines are disposed alternately in the first direction and provided on the same layer. Switching elements of two of the pixels disposed side by side in the first direction each are coupled to one of the signal lines, and the signal line is superimposed on the corresponding detection electrode that straddles the two pixels. The sensor wires are disposed between the two pixels disposed side by side in the first direction and superimposed on the respective slits of the two detection electrodes disposed side by side in the first direction.
According to one embodiment, a display device includes a substrate, an organic insulating layer disposed above the substrate over a display area in which a plurality of display elements are disposed and over a peripheral area, a first partition disposed between the display elements adjacent to each other, and a second partition disposed in the peripheral area. The first partition and the second partition each include a conductive lower portion and an upper portion protruding from a side surface of the lower portion, the organic insulating layer includes an aperture in the peripheral area, and the second partition is disposed along an edge of the aperture on an outer side of the aperture.
According to an aspect, a display device includes: a backlight, first and second image display panels. The first image display panel includes: a first polarizing plate configured to transmit light polarized in a first direction and block light polarized in a direction different from the first direction; and a first color filter provided between the first polarizing plate and the second image display panel. The second image display panel includes: a second polarizing plate configured to transmit light polarized in a second direction and block light polarized in a direction different from the second direction; and a second color filter provided between at least the second polarizing plate and the first image display panel. The thickness of the first color filter is different from the thickness of the second color filter. Another polarizing plate is not provided between the first image display panel and the second image display panel.
According to one embodiment, a display device includes a substrate, an organic insulating layer provided on the substrate and having a recess portion, a lower electrode provided in the recess portion and embedded in the organic insulating layer, a rib which has a pixel aperture overlapping the lower electrode, an auxiliary line which includes a conductive lower portion and an upper portion, an upper electrode which faces the lower electrode and is connected to the auxiliary line, and an organic layer which is provided between the lower electrode and the upper electrode. An upper surface of the lower electrode is exposed from the organic insulating layer in the pixel aperture and is in contact with the organic layer.
A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.
H10D 62/80 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux
H10D 62/83 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
H10K 59/126 - Blindage, p. ex. moyens de blocage de la lumière sur les TFT
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
A detection device is provided including first substrate including first region, second region and third region arranged in first direction, second region arranged between first and third regions; first detection electrode arranged on first substrate; second detection electrode arranged on first substrate and being adjacent to first detection electrode; first electrode coupled to first detection electrode and continuously formed from first to third regions; second electrode coupled to second detection electrode, and continuously formed from first to third regions, convex portions located between first electrode and second electrode in second region and spaced away from first and second electrodes; and protective layer formed on first and second electrodes in first region and not formed on first electrode and second electrode in third region, wherein at least one of convex portions is covered with protective layer, and at least another one of convex portions is not covered with protective layer.
A detecting device including: a plurality of optical sensors; and a signal readout line, each of the plurality of optical sensors including a photodiode and an amplifier circuit, a plurality of the amplifier circuits provided in the plurality of optical sensors being connected in series with each other, outputs of a plurality of the photodiodes being connected to inputs of the plurality of amplifier circuits, respectively, via respective selecting switch circuits, and outputs of the plurality of amplifier circuits being connected to the signal readout line via respective readout switch circuits.
A display device includes a flexible substrate including a first region including a display region, a second region including a curved region, and a third region including a terminal region; an electro-optical element located in the display region; and a resin layer continuously extending from the first region to the third region.
This radio wave absorption device includes: a patch electrode; a counter electrode that faces the patch electrode and that is formed from a different material than the patch electrode; and a liquid crystal layer between the patch electrode and the counter electrode. Another radio wave absorption device includes a first patch electrode, a second patch electrode that can be controlled separately from the first patch electrode, a counter electrode that faces the first patch electrode and the second patch electrode, and a liquid crystal layer between the first patch electrode and the counter electrode and between the second patch electrode and the counter electrode, with a first relative permittivity of the liquid crystal layer interposed between the first patch electrode and the counter electrode differing from a second relative permittivity of the liquid crystal layer interposed between the second patch electrode and the counter electrode.
H01Q 17/00 - Dispositifs pour absorber les ondes rayonnées par une antenneCombinaisons de tels dispositifs avec des éléments ou systèmes d'antennes actives
H01Q 3/26 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
According to one embodiment, a display device includes an organic insulating layer provided over a display area and a surrounding area, a lower electrode, an inorganic insulating layer, an organic layer, an upper electrode, and surrounding partitions provided in the surrounding area. Each of the surrounding partitions has a first lower portion located on the inorganic insulating layer, and a first upper portion located on the first lower portion and protruding from a side surface of the first lower portion. The organic insulating layer has a recess portion. The surrounding partitions include a first partition which overlaps the recess portion. A distance from the first upper portion of the first partition to an edge portion of the recess portion is greater than or equal to 50 μm.
According to one embodiment, a display device includes an organic insulating layer provided over a display area and a surrounding area, a lower electrode provided in the display area, an inorganic insulating layer provided on the organic insulating layer, an organic layer provided on the lower electrode, an upper electrode provided on the organic layer, and a plurality of surrounding partitions provided in the surrounding area. The organic insulating layer has a removed portion along an outer edge of a substrate in the surrounding area. The inorganic insulating layer has a loop groove which surrounds the display area in the surrounding area. The surrounding partitions include a pair of first partitions facing each other across the groove.
According to one embodiment, a display device includes a substrate having display and surrounding areas, an organic insulating layer, a lower electrode above the organic insulating layer, a rib layer having a pixel aperture, a first partition in the display area, an organic layer contacting the lower electrode, an upper electrode covering the organic layer, and a second partition in the surrounding area. Each of the first and second partitions includes a lower portion and an upper portion having an end portion which protrudes from a side surface of the lower portion. The second partition includes segments spaced apart from each other. The rib layer has a slit surrounding at least one of the segments.
According to one embodiment, a display device includes a substrate having a display area and a surrounding area, an organic insulating layer above the substrate, a rib layer having pixel apertures in the display area, and display elements. The substrate has a first side. The organic insulating layer has a second side between the first side and the display area, and a protrusion which protrudes from the second side toward the first side and is provided at a position distant from an end portion of the second side. Further, the second side has a first linear portion parallel to the first side, and a recess between the first linear portion and the protrusion.
A gallium nitride-based semiconductor device includes an amorphous substrate, an orientation control layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the orientation control layer, and at least one electrode in contact with the gallium nitride-based semiconductor layer. The at least one electrode is formed on the gallium nitride-based semiconductor layer by vacuum evaporation using a resistance heating evaporation source as a metallic material as a vapor deposition material.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
Disclosed is a display device including a substrate as well as a plurality of pixels and at least one reflective element located over the substrate. Each of the plurality of pixels has a pixel circuit and a light-emitting element, and the light-emitting element has a pixel electrode electrically connected to the pixel circuit, a first stack structure over the pixel electrode, and a common electrode over the first stack structure. At least one reflective element has a lower electrode, a second stack structure over the lower electrode, and a reflective film overlapping the second stack structure. Each of the first stack structure and the second stack structure includes a plurality of inorganic semiconductor layers.
A display device includes a display section in which a plurality of pixels are arrayed in a matrix, a plurality of scan lines which select pixels, a plurality of signal lines which supply image signals to the selected pixels, and color filters that are arranged so as to correspond to color displays of the pixels. In the device, the display section includes an effective pixel portion and a frame portion that surrounds the effective pixel portion, and the frame portion and a wiring circuit of the effective pixel portion are covered with light-shielding layers, the light-shielding layers being separated from each other at a certain separation location in the display section, and a plurality of color filters having different colors are arranged by being stacked at the separation location.
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
H01J 9/20 - Fabrication des écrans, sur lesquels ou à partir desquels une image ou un dessin sont formés, pris, convertis ou mis en mémoireApplication de revêtements à la surface de l'enceinte
According to one embodiment, a display device includes a substrate having a display area and a surrounding area, an organic insulating layer formed of an organic insulating material, a rib layer which covers the organic insulating layer and has pixel apertures, and display elements overlapping the pixel apertures. The substrate has a first side. The organic insulating layer has a second side between the first side and the display area as seen in plan view, and a protrusion which protrudes from the second side toward the first side as seen in plan view and is provided at a position distant from an end portion of the second side. Further, the rib layer has a first slit overlapping the protrusion.
According to an aspect, a display device includes an array substrate, a counter substrate, and a liquid crystal layer including liquid crystal molecules. The array substrate includes signal lines arrayed in a first direction, scanning lines arrayed in a second direction, pixel electrodes disposed respectively in openings of pixels, semiconductors provided respectively to the pixels, and a common electrode overlapping the pixel electrodes with an insulating film interposed therebetween. An end of each pixel electrode overlaps the opening of a corresponding one of the pixels. A slit of the common electrode has a polygonal shape. In the opening of each pixel, a first part of the slit overlaps the pixel electrode, and a second part of the slit overlaps a region not provided with the pixel electrode.
According to an aspect, a display system includes: a wearable part; a first display device having a first display region; a second display device having a second display region; and a drive circuit. The first display region and the second display region are provided with sub-pixels arrayed along a first direction and a second direction. The sub-pixels include first sub-pixels, second sub-pixels, and third sub-pixels. The first sub-pixels are continuously arrayed in a third direction inclined with respect to the first and second directions, the second sub-pixels are continuously arrayed in the third direction, and the third sub-pixels are continuously arrayed in the third direction. A first angle between a fifth direction and the third direction is smaller than a second angle between the second direction and the third direction. The fifth direction is orthogonal to a fourth direction in which the first and second display regions are arranged.
G09G 3/00 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H04N 13/344 - Affichage pour le visionnement à l’aide de lunettes spéciales ou de visiocasques avec des visiocasques portant des affichages gauche et droit
57.
CONTROL DEVICE FOR ILLUMINATION DEVICE, AND ILLUMINATION SYSTEM
According to an aspect, a control device for an illumination device includes: a touch sensor and a display panel. A light diffusion degree setting screen for executing light diffusion degree setting processing for the illumination device is displayed on a display region of the display panel. The light diffusion degree setting screen is provided with a light distribution shape object with a central point at the origin of an XY plane, a first light diffusion degree setting object with a central point at an intersection point of an X axis of the XY plane and an outline of the light distribution shape object, and a second light diffusion degree setting object with a central point at an intersection point of a Y axis of the XY plane and the outline of the light distribution shape object.
A fluorescence detection device that has higher detection sensitivity for fluorescence is provided. The fluorescence detection device includes: a light source configured to irradiate a sample with excitation light in a circularly polarized state; a cholesteric liquid crystal layer configured to cause fluorescence emitted by the sample due to the excitation light to transmit therethrough and reflect the excitation light; and detection circuitry configured to detect the fluorescence transmitted through the cholesteric liquid crystal layer.
A display device with a touch sensor having a display function and a touch sensor function is provided. The display device includes a first substrate including a pixel electrode; a first electrode along a first direction; and a second substrate including a second electrode that includes patterns of electrodes along a second direction crossing the first direction and that faces the first electrode and the pixel electrode, wherein upon the display function being activated, the pixel electrode is supplied with a pixel signal, and the second electrode is supplied with common voltage, and upon the touch sensor function being activated, the first electrode is applied with a first signal and the second electrode is configured to receive the first signal to be a second signal as a touch detecting signal.
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
G06F 3/044 - Numériseurs, p. ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens capacitifs
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
60.
LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE HAVING THE LIGHT-EMITTING ELEMENT
Disclosed is a light-emitting element including an anode, a cathode, and an electroluminescence layer between the anode and the cathode. The electroluminescence layer includes an electron-blocking layer and an emission layer. The electron-blocking layer contains an electron-blocking material. The emission layer is located over and in contact with the electron-blocking layer and contains a host material and a first emission material exhibiting thermally activated delayed fluorescence. The light-emitting element is configured so that a resistance is equal to or greater than 101.0% and equal to or less than 104.0% of a resistance in a case where the electron-blocking material is replaced with the host material. The resistance is a resistance between the anode and the cathode when a current flows at a constant current density between the anode and the cathode.
H10K 101/40 - Interrelation des paramètres entre plusieurs couches ou sous-couches actives constitutives, p. ex. valeurs HOMO dans des couches adjacentes
61.
LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE HAVING THE LIGHT-EMITTING ELEMENT
Disclosed is a light-emitting element including an anode, a cathode, and an electroluminescence layer between the anode and the cathode. The electroluminescence layer includes: an electron-blocking layer; a buffer layer over the electron-blocking layer; and an emission layer located over the buffer layer and containing a host material and a first emission material exhibiting thermally activated delayed fluorescence. The buffer layer contains the host material. The emission layer may further include a second emission material. An energy level of a singlet excited state of the second emission material is lower than an energy level of a singlet excited state of the first emission material.
According to an aspect, a detection device includes: a sensor circuit including a plurality of sensor electrodes provided to a substrate, a peripheral electrode provided around a detection region provided with the sensor electrodes, and a shield electrode provided to a surface opposite to a surface provided with the sensor electrodes and the peripheral electrode; an AFE circuit configured to generate sensing data corresponding to a distance between the sensor electrodes and a proximity object, based on a detection signal acquired from the sensor electrodes; a drive signal generation circuit configured to generate a drive signal with a substantially sinusoidal waveform and supply the drive signal to the peripheral electrode and the shield electrode; and a control circuit configured to control the AFE circuit and the drive signal generation circuit. The control circuit controls an amplitude value of the drive signal based on the sensing data.
The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.
According to one embodiment, a display device includes a switching element, a common electrode, an insulating film covering the common electrode, a first pixel electrode electrically connected to the switching element in a first contact hole penetrating the insulating film, and a transparent conductive film electrically connected to the common electrode in a second contact hole penetrating the insulating film. The first pixel electrode and the transparent conductive film are arranged in a first direction in a same layer. A size of the first contact hole and a size of the second contact hole are different from each other in planar view.
A light adjustment device includes a panel unit in which a plurality of light adjustment panels are stacked in a first direction, wherein each of the light adjustment panels includes a first substrate, a second substrate overlapping the first substrate, a liquid crystal layer positioned between the first and second substrates, a first seal material extending along the edge of the liquid crystal layer between the first and second substrates and provided with an injection opening, and a second seal material sealing the injection opening, the second seal material protruding outward from the edge of the light adjustment panel when viewed in a first direction, and when each of the light adjustment panels is sequentially designated as one light adjustment panel, the second seal material of the one light adjustment panel is positioned inside the edges of the other light adjustment panels other than the one light adjustment panel.
G02F 1/1339 - JointsÉléments d'espacementScellement des cellules
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
66.
IMAGING APPARATUS, SUBJECT DEPTH ESTIMATION METHOD, AND PROGRAM
Provided is a subject depth estimation method including the steps of obtaining a non-masked captured image by imaging a subject in a state where no mask is installed, determining a representative edge direction based on an edge image included in the non-masked captured image, selecting, from among a plurality of masks prepared in advance, a combination of the masks with a relatively highest depth estimation accuracy of an object corresponding to an image representing an edge in an equal direction to the representative edge direction, obtaining a plurality of masked captured images by imaging the subject using each of the masks included in the selected combination of the masks, and calculating a depth estimation value of the subject at each of a plurality of positions by performing decoding processing based on a point spread function unique to each of the masks selected on the plurality of masked captured images.
A display device includes a display region arranged with a plurality of pixels on an insulating surface, and a terminal region with a plurality of output terminals electrically connected to the plurality of pixels in a peripheral region surrounding the display region, wherein a first output terminal and a second output terminal of the plurality of output terminals are staggered, the first output terminal includes a first conductive layer, a second conductive layer, and a third conductive layer electrically connected to each other, the second output terminal includes a fourth conductive layer, a fifth conductive layer, and a sixth conductive layer electrically connected to each other, the second conductive layer has a first region extending toward the display region and functioning as a first wiring, and the fourth conductive layer has a second region extending toward the display region and functioning as a second wiring.
An arithmetic control unit executes: an imaging process of controlling a coded imaging system to capture an image of a subject by coded imaging and obtain a first captured image; an image generation process of reducing resolution of the first captured image to obtain a second captured image; a partial region setting process of setting a partial region in the first captured image; a process of performing a first decoding process on a partial image corresponding to the partial region in the first captured image to obtain a first depth map; and a process of performing a second decoding process on the second captured image to obtain a second depth map.
Provided are a lighting system and a lighting device which make it possible to realize dynamic light distribution control that follows the signal level of music data. The present invention comprises: a speaker device (400) capable of reproducing music data; a lighting device (1) capable of controlling the light distribution state of light emitted from a light source; and a control device (300) that transmits the music data to the speaker device (400), and dynamically controls the light distribution state of the lighting device (1) in synchronization with the time-series change in the music data.
This detection device comprises: an optical sensor; a light source for emitting light to the optical sensor; and a detection circuit including an integrating circuit connected to the optical sensor. The integrating circuit is provided so as to be capable of changing a gain corresponding to the slope of an output voltage characteristic indicating the relationship between the intensity of light emitted to the optical sensor and an output voltage of the integrating circuit. The optical sensor measures the intensity of light both when the light source is off and when the light source is on. The greater the light intensity of external light measured when the light source is off, the more the integrating circuit reduces the gain.
A61B 5/02 - Détection, mesure ou enregistrement en vue de l'évaluation du système cardio-vasculaire, p. ex. mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin
A61B 5/1171 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci
A61B 5/1172 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci utilisant des empreintes digitales
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
National University Corporation Tokyo Medical and Dental University (Japon)
Inventeur(s)
Ono, Yuji
Tamura, Kei
Mitani, Hiromi
Ohmori, Hiroko
Ono, Takashi
Kirimoto, Hiroaki
Abrégé
According to an aspect, a detection system includes: a detection device configured to perform sensing related to bruxism; and an information processing device configured to determine presence or absence of bruxism based on data indicating a result of sensing by the detection device. The detection device includes a force sensor disposed at a mouthpiece, a myoelectric sensor attachable to a human cheek, and a controller configured to output data in which an output of the force sensor is synchronized with an output of the myoelectric sensor.
National University Corporation Tokyo Medical and Dental University (Japon)
Inventeur(s)
Ono, Yuji
Tamura, Kei
Mitani, Hiromi
Ohmori, Hiroko
Ono, Takashi
Kirimoto, Hiroaki
Abrégé
According to an aspect, a bruxism reduction device includes: a force sensor disposed at a mouthpiece; a myoelectric sensor attachable to a human cheek; and a bruxism reduction processor including an electrode attachable to a human outer skin layer at a position corresponding to a muscle that causes a human jaw to open when an electrical signal is applied, the bruxism reduction processor being configured to output the electrical signal from the electrode. The bruxism reduction processor is configured to output the electrical signal when a human is determined to be having bruxism based on an output of the force sensor and an output of the myoelectric sensor synchronized with each other.
A61B 90/00 - Instruments, outillage ou accessoires spécialement adaptés à la chirurgie ou au diagnostic non couverts par l'un des groupes , p. ex. pour le traitement de la luxation ou pour la protection de bords de blessures
According to an aspect, a detection device includes: a substrate; photoelectric conversion elements arranged on the substrate; transistors that each include a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each photoelectric conversion element; and a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed therebetween. The first electrode includes main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts. The second electrode is formed to have an island pattern for each photoelectric conversion element. The first electrode is located in the same layer as that of the gate electrode. The second electrode is located in the same layer as that of the semiconductor layer.
H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.
According to one embodiment, a camera module includes an image sensor and a liquid crystal panel. The liquid crystal panel includes an aperture portion, a liquid crystal layer overlapping the aperture portion, an electrode overlapping the liquid crystal layer, and a driver configured to drive the liquid crystal layer by applying a voltage to the electrode. The driver is configured to drive the liquid crystal layer based on a first control value and drive the liquid crystal layer based on a second control value. A first image captured based on the first control value is used to calculate a distance to a subject having a first brightness. A second image captured based on the second control value is used to calculate a distance to a subject having a second brightness.
National University Corporation Tokyo Medical and Dental University (Japon)
Inventeur(s)
Ono, Yuji
Tamura, Kei
Mitani, Hiromi
Ohmori, Hiroko
Ono, Takashi
Kirimoto, Hiroaki
Abrégé
According to an aspect, a detection device includes: a force sensor disposed at a mouthpiece; a myoelectric sensor attachable to a human cheek; and a controller configured to perform output in which an output of the force sensor is synchronized with an output of the myoelectric sensor.
A generation system includes a liquid crystal shutter that forms a coded aperture part and a depth calculating unit that uses a captured image acquired by an imaging device to calculate a depth for each unit area of a depth map. The coded aperture part includes an aperture pattern including a transmissive area having a first light transmittance, a semi-transmissive area having a second light transmittance lower than the first light transmittance, and a shielding area having a third light transmittance lower than the second light transmittance. This serves to reduce the number of times of capturing an object required for generating a depth map, thereby increasing situations in which the generation system is used.
According to one embodiment, a display device comprises a flexible substrate, a first insulating film disposed on the flexible substrate, a switching element disposed on the first insulating film, a signal wiring electrically connected with the switching element, a first organic film disposed on the signal wiring, a connection wiring disposed on the first organic film, a second organic film disposed on the connection wiring and a pad electrode disposed on the second organic film. The connection wiring is located between the first organic film and the second organic film and is in contact with the first organic film and the second organic film.
A liquid crystal light control device includes a plurality of liquid crystal cells arranged in a stack. Each of the plurality of liquid crystal cells includes a first substrate and a second substrate opposite the first substrate, a first electrode and a second electrode both of which have a strip pattern arranged on at least one of the first substrate and the second substrate, a first alignment film on the first substrate and a second alignment film on the second substrate, and a liquid crystal layer between the first substrate and the second substrate. The strip pattern is arranged alternately with the first electrode and the second electrode, an alignment direction of the first alignment film is aligned with a direction of extension of the strip pattern, and an alignment direction of the second alignment film is arranged intersecting the alignment direction of the first alignment film.
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
G02F 1/139 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides caractérisés par l'effet électro-optique ou magnéto-optique, p. ex. transition de phase induite par un champ, effet d'orientation, interaction entre milieu récepteur et matière additive ou diffusion dynamique basés sur des effets d'orientation où les cristaux liquides restent transparents
A liquid crystal light control device in an embodiment according to the present invention includes a first liquid crystal cell, a second liquid crystal cell overlapping the first liquid crystal cell, a third liquid crystal cell overlapping the second liquid crystal cell, and a fourth liquid crystal cell overlapping the third liquid crystal, each of the first liquid crystal cell, the second liquid crystal cell, the third liquid crystal cell, and the fourth liquid crystal cell includes a first substrate arranged with a first electrode having a strip pattern, a second substrate arranged with a second electrode having a strip pattern, and a liquid crystal layer between the first substrate and the second substrate. The first substrate and the second substrate are arranged with a longitudinal direction of the strip pattern of the first electrode and second electrode intersecting.
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. In a plan view, the second gate electrode is located with a space from each of the source electrode and the drain electrode. The second gate electrode is electrically connected to the first gate electrode.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A semiconductor device comprises a first insulating layer; an oxide semiconductor layer having a polycrystalline structure on the first insulating layer; a gate insulating layer on the semiconductor oxide layer; a buffer layer on the gate insulating layer; a gate wiring on the buffer layer; and a second insulating layer on the gate wiring. The oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. An electrical resistivity of the second region is higher than an electrical resistivity of the first region and lower than an electrical resistivity of the third region. A sheet resistance of the third region is less than 1000 ohm/square.
A task of the present invention is to realize a display device with high definition and high contrast by means of local dimming. The configuration is as follows. A liquid crystal display device including a display panel and a back light, the back light having a light source and a group of optical sheets, the light source including a light source substrate and LEDs arranged on the light source substrate, the light source being divided into segments in a plan view, the segment including at least one LED, characterized in that the segment is surrounded by a stacked structure of a lower reflection wall and an upper reflection wall.
The invention relates to a transparent liquid crystal display device. The configuration is as follows. A display area is formed in a portion where a TFT substrate and an opposing substrate overlap, a terminal area is formed in a portion of the TFT substrate that does not overlap with the opposing substrate, and a cover glass is arranged over the TFT substrate or the opposing substrate; a first side surface of a light guide plate contacts the terminal side of the cover glass, a second side surface of the light guide plate, which is opposite to the first side surface, is arranged with a plurality of LEDs, a first lens is formed on the first side surface, and a round prism is formed on the second side surface. A pitch of round prisms in a first direction is larger than a width of the round prism in the first direction.
A display device includes a light-emitting element, a first transistor, and a second transistor, the first transistor includes a first gate electrode, a first insulating film, a first oxide semiconductor layer, a second insulating film, and a first conductive layer provided on the second insulating film, and the second transistor includes the first insulating film, a second oxide semiconductor layer, a second insulating film, and a second gate electrode, wherein an etching rate of the first oxide semiconductor layer and the second semiconductor layer is less than 3 nm/min when the first oxide semiconductor layer and the second semiconductor layer are etched using an etching solution containing phosphoric acid as a main component at 40° C.
H10K 59/124 - Couches isolantes formées entre les éléments TFT et les éléments OLED
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
A semiconductor device according to an embodiment of the present invention includes an oxide semiconductor layer having a polycrystalline structure and including an impurity region containing an impurity element, a gate electrode over the oxide semiconductor layer, an insulating layer between the oxide semiconductor layer and the gate electrode, a first contact hole penetrating the insulating layer and exposing the impurity region, a second contact hole penetrating at least the insulating layer and having a greater depth than the first contact hole, and a connection wiring electrically connecting the impurity region to a layer which is exposed in the second contact hole through the first contact hole and the second contact hole. The connection wiring includes a first conductive layer and a second conductive layer on the first conductive layer. A portion of the first conductive layer that is exposed from the second conductive layer contains the impurity element.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A radiation detector according to an embodiment of the present invention includes: a transistor in which an oxide semiconductor layer is used in a channel of the transistor; a photoelectric converting layer connected to the transistor; a wavelength converting layer facing the photoelectric converting layer and capable of emitting visible light based on radioactive rays absorbed by the wavelength converting layer; and an oxide layer in contact with the oxide semiconductor layer between the transistor and the photoelectric converting layer, wherein a thickness of the oxide layer is 50 nm or less.
H01L 31/119 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire caractérisés par un fonctionnement par effet de champ, p.ex. détecteurs du type MIS
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
According to one embodiment, a display device includes a display panel. A second substrate of the display panel includes a transparent first basement, a transparent conductive layer, a metal line, and a first optical layer. The transparent conductive layer is located between a first main surface of the first basement and a liquid crystal layer of the display panel. The metal line is located between the first main surface and the transparent conductive layer and is in contact with the transparent conductive layer. The first optical layer is located between the first main surface and the transparent conductive layer, made to overlap with the metal line, and has a refractive index lower than a refractive index of the first basement.
According to one embodiment, a display device includes a display panel, a transparent substrate, a fixing member, and a first light source unit. The transparent substrate has a first main face, a first incident face which is a first side face in contact with the first main face at a first edge, and a first non-incident face which is a second side face in contact with the first main face at a second edge. A shape of the first incident face and a shape of the first non-incident face are different from each other.
According to an aspect, a head-up display causes an image reflected by a light transmitting member to be superimposed on a real image transmitted by the light transmitting member and causes the superimposed image to be visually recognized as a virtual image by an viewer. The head-up display includes a display device and a magnification optical system. The display device includes a backlight, a first image display panel that receives direct light from the backlight, and a second image display panel that is disposed with a gap between the second image display panel and the first image display panel and receives light transmitted by the first image display panel. The first image display panel includes a first polarizer provided between the first image display panel and the backlight. The second image display panel includes a second polarizer provided between the second image display panel and the magnification optical system.
According to an aspect, a detection device includes: an optical sensor; a light source configured to emit light to the optical sensor; a detection signal amplifying circuit configured to convert a variation of current supplied from the optical sensor into a variation of voltage; and an analog-to-digital (A/D) conversion circuit configured to convert an output voltage signal after being converted into the voltage variation into a digital detection value. The A/D conversion circuit is configured to limit the detection value to a maximum digital gradation value or a minimum digital gradation value when the light source is off.
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H10K 39/34 - Capteurs d'images organiques intégrés avec des diodes électroluminescentes organiques [OLED]
Provided is an oxide semiconductor film having crystallinity, said oxide semiconductor film comprising indium (In) and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid-based elements. The oxide semiconductor film contains a plurality of crystal grains which each include at least one of the <101> crystal orientation, the <111> crystal orientation, and the <001> crystal orientation that are measured by an electron backscatter diffraction method. The occupancy ratio of a first region in which the <101> crystal orientation is oriented within 15° with respect to the normal direction of the surface of the oxide semiconductor film is not less than 20%.
A display device includes an oxide semiconductor layer including a polycrystalline structure, a gate insulating layer provided on the oxide semiconductor layer, a gate electrode opposite to the oxide semiconductor layer on the gate insulating layer, a first silicon nitride layer provided in contact with the gate electrode, a source wiring provided in contact with the first silicon nitride layer and electrically connected to the oxide semiconductor layer, a second silicon nitride layer provided in contact with the source wiring and the first silicon nitride layer, a first transparent conductive layer provided in contact with the second silicon nitride layer and electrically connected to the oxide semiconductor layer, and a third silicon nitride layer provided in contact with the first transparent conductive layer and the second silicon nitride layer, wherein a channel length of the gate electrode is 2.0 μm or less.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A semiconductor device according to an embodiment of the present invention includes: a first semiconductor layer; a first gate electrode; a first gate insulating layer; a first insulating layer above the first gate electrode; a first electrode overlapping the first semiconductor layer, and electrically connected to the first semiconductor layer; a second semiconductor layer above the first insulating layer and made of a different material from the first semiconductor layer; a second gate electrode; a second gate insulating layer; a second electrode overlapping the second semiconductor layer, and electrically connected to the second semiconductor layer; and a first metal nitride layer between the second semiconductor layer and the second electrode, wherein the second semiconductor layer is polycrystalline, and an etching rate of the second semiconductor layer with respect to an etchant including phosphoric acid as a main component is less than 3 nm/min at 40° C.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. The second gate electrode includes a second oxide semiconductor having a polycrystalline structure. The second gate electrode is electrically connected to the first gate electrode.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A semiconductor device includes a light shielding layer, a first silicon nitride insulating layer in contact with the light shielding layer with a first interface, a first silicon oxide insulating layer in contact with the first silicon nitride layer with a second interface, and an oxide semiconductor layer over the first silicon oxide insulating layer. The first silicon oxide insulating layer is in contact with the second silicon oxide insulating layer. A thickness t of the first silicon nitride layer satisfies a condition in which light reflected at the first interface and light reflected at the second interface weaken each other when light having a wavelength of 450 nm is incident on the first silicon nitride insulating layer at an angle of 60 degrees from a normal direction of the second interface.
A semiconductor device according to an embodiment of the present invention includes: an oxide semiconductor layer; a first gate electrode facing the oxide semiconductor layer; a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; an electrode arranged in a region overlapping the oxide semiconductor layer in a plan view and electrically connected to the oxide semiconductor layer; and a metal nitride layer between the oxide semiconductor layer and the electrode, wherein the oxide semiconductor layer is polycrystalline, and an etching rate of the oxide semiconductor layer with respect to an etchant containing phosphoric acid as a main component is less than 3 nm/min at 40° C.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
A semiconductor device includes a gate electrode, an oxide semiconductor layer having a polycrystalline structure, and a gate insulating layer between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes a source region and a drain region each containing an impurity element, a channel region between the source region and the drain region, and a first region adjacent to the channel region. The first region includes a first edge extending along a first direction travelling from the source region to the drain region. The first region has a higher electrical resistivity than each of the source region and the drain region. An etching rate of the oxide semiconductor layer is less than 3 nm/min when the oxide semiconductor layer is etched using an etching solution containing phosphoric acid as a main component at 40° C.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
According to one embodiment, a display device includes a display panel including a first end portion and a second end portion located on a side opposite to the first end portion, a first light source emitting light to the first end portion, and a first reflective member. The display panel includes an array substrate, a counter-substrate opposed to the array substrate, and a liquid crystal layer provided between the array substrate and the counter-substrate. The array substrate has a first end face which is located in the first end portion and on which the first reflective member is provided.
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1334 - Dispositions relatives à la structure basées sur des cristaux liquides dispersés dans un polymère, p. ex. cristaux liquides micro-encapsulés
According to one embodiment, a display device includes a lower electrode in a display area, a rib layer in the display area and a surrounding area, a first partition above the rib layer in the display area, an organic layer, an upper electrode and a second partition above the rib layer in the surrounding area. The rib layer has a pixel aperture. The organic layer is in contact with the lower electrode through the pixel aperture. The upper electrode covers the organic layer and is in contact with the first partition. Each of the partitions includes a lower portion and an upper portion. The second partition includes segments spaced apart from each other. Each of the segments has apertures.
