Disclosed in the present invention is a furnace tube, comprising an outer furnace tube, an inner furnace tube, an upper furnace cover, and a lower furnace door. The upper furnace cover is mounted at the upper end of the outer furnace tube; the upper end of the inner furnace tube is hoisted on the upper furnace cover; an opening is formed at the lower end of the inner furnace tube, and a support table is provided at the opening, so that the inner furnace tube can be upward inserted into the outer furnace tube from the bottom of the outer furnace tube for mounting; the lower furnace door is mounted at the lower ends of the outer furnace tube and the inner furnace tube; a center hole is formed in the middle of the lower furnace door, used for allowing a support base of the inner furnace tube to pass through; and an axially-perforating magnetic fluid sealing assembly is sealedly mounted between the lower furnace door and the lower end of the inner furnace tube. According to the present invention, by forming an opening at the lower end of an inner furnace tube, providing a connecting member on the upper end of the inner furnace tube, and mounting a support base at the lower end of the inner furnace tube, the inner furnace tube can be inserted from the bottom of a vertical furnace for mounting, and the upper end of the inner furnace tube is directly hoisted on and connected to an upper furnace cover, thereby facilitating sealing between the upper furnace cover and the outer furnace tube, realizing a more convenient mounting mode, and reducing the sealing requirements.
F27B 17/00 - Fours d'un genre non couvert par l'un des groupes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
Disclosed in the present invention are a furnace tube sealing structure and a furnace tube. An upper furnace cover is sealedly mounted at the upper end of an outer furnace tube and an inner furnace tube; a lower furnace door is sealedly mounted at the lower end of the outer furnace tube; a magnetic fluid sealing assembly is sealedly connected to a center hole of the lower furnace door; one end of a transmission shaft of the magnetic fluid sealing assembly is located inside a closed cavity formed by sealing of the furnace tube, and the other end of the transmission shaft is located outside the closed cavity; and a transmission component, which is located in the closed cavity and drives a carrier to rotate, of a rotating apparatus is connected to the transmission shaft of the magnetic fluid sealing assembly. According to the present invention, the carrier inside the furnace tube can be driven to rotate by means of the rotating apparatus, and the furnace tube is sealed by means of the magnetic fluid sealing assembly, so that a rotating power source of the rotating apparatus can be externally mounted and transmitted by means of the magnetic fluid sealing assembly, and meanwhile, the vacuum environment within the furnace tube can be guaranteed.
Disclosed in the present invention is a furnace tube, comprising an outer furnace tube, an inner furnace tube, an upper furnace cover and a lower furnace door, wherein the inner furnace tube is mounted in the outer furnace tube; both an upper end and a lower end of the inner furnace tube are open; a connecting member for hoisting connection is provided at an opening at the upper end of the inner furnace tube, and a support platform for mounting a support base is provided at an opening at the lower end of the inner furnace tube, such that the inner furnace tube can be hoisted downwards from the top of the outer furnace tube to be mounted inside the outer furnace tube, or inserted upwards from the bottom of the outer furnace tube to be mounted inside the outer furnace tube. In the present invention, the inner furnace tube is designed in a through manner, such that the inner furnace tube can be hoisted from the top and can also be inserted upwards for mounting from a bottom support, thus diversifying the mounting methods of the inner furnace tube. Moreover, carriers in the furnace tube are placed on a rotatable vessel support base, and the positions and angles of the carriers can be adjusted in the furnace, such that a gas field and a thermal field in a closed chamber are uniform, and the overall process yield is improved.
F27B 17/00 - Fours d'un genre non couvert par l'un des groupes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The present invention provides a vertical furnace. The vertical furnace comprises an upper furnace cover, a lower furnace door, an outer furnace tube, and an inner furnace tube which define an accommodating cavity, wherein the upper furnace cover and the lower furnace door are arranged at an upper end and a lower end of the outer furnace tube, respectively, the inner furnace tube is arranged on the inner side of the outer furnace tube, the end of the inner furnace tube close to the lower furnace door is a closed end, and a distance is kept between the closed end and the lower furnace door; and a rotatable carrier boat bearing device for bearing a carrier boat is provided in the accommodating cavity in the vertical furnace, and the side of the lower furnace door away from the accommodating cavity is provided with a driving device for driving the carrier boat bearing device to rotate. The rotatable carrier boat bearing device for bearing the carrier boat is provided, and the driving device drives the carrier boat bearing device to rotate inside the accommodating cavity and thus drives the carrier boat borne by the carrier boat bearing device to rotate synchronously, so that the vertical furnace provided by the present invention improves heating uniformity of a silicon wafer on the carrier boat.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
Disclosed are a furnace tube and a control method, comprising an outer furnace tube, an inner furnace tube, an upper furnace cover, a lower furnace door, a heating source and a rotation apparatus. The inner furnace tube is mounted inside the outer furnace tube, the upper furnace cover and the lower furnace door are installed at the upper and lower ends of the outer furnace tube and the inner furnace tube, respectively, the upper and lower ends of an accommodation space between the inner furnace tube and the outer furnace tube are sealed to form a sealed chamber, and a heating source used for heating the sealed chamber is provided on the inner furnace tube and the outer furnace tube. The rotation apparatus corresponds to the sealed chamber, and is provided with multiple carrier placement positions. When the rotation apparatus rotates, it drives carriers on the carrier placement positions to adjust their positions and angles within the sealed chamber. In the furnace tube of the present invention, the carriers are placed on rotatable boat-supporting bases, and when a reactive gas is introduced into the sealed chamber, or when there is a temperature differential during heating, adjusting the positions and angles of the carriers inside the furnace can cause the gas field and thermal field inside the sealed chamber to be more uniform, thereby improving the overall process yield.
The present invention relates to the technical field of solar cell production and manufacturing, and especially to a double-layer drying apparatus and a drying method therefor. In the double-layer drying apparatus of the present invention, a pair of drying devices are stacked, and a basket in each drying device is conveyed in and out in the same direction by means of a transfer platform arranged in the corresponding drying device, such that the unloading of the two drying devices does not interfere with each other, and the upper-layer loading and lower-layer unloading or the upper-layer unloading and lower-layer loading can be simultaneously realized, thereby preventing the loading and unloading interference between an upper layer and a lower layer of the double-layer drying apparatus, and improving the usage efficiency of the double-layer drying apparatus.
F26B 15/00 - Machines ou appareils à mouvement progressif pour le séchage d'objetsMachines ou appareils à mouvement progressif, pour le séchage de lots d'un matériau de forme compacte
F26B 25/00 - Parties constitutives d'application générale non couvertes par un des groupes ou
F26B 21/00 - Dispositions pour l'alimentation ou le réglage de l'air ou des gaz pour le séchage d'un matériau solide ou d'objets
F26B 21/04 - Circulation de l'air ou des gaz en cycles fermés, p. ex. totalement à l'intérieur de l'enceinte de séchage partiellement à l'extérieur de l'enceinte de séchage
The present invention relates to the technical field of solar cell production and manufacturing, and specifically to a basket cleaning and drying system. The basket cleaning and drying system comprises: a basket lifting apparatus, a cleaning tank and a drying apparatus. The basket lifting apparatus is arranged above the cleaning tank so as to extract a basket from the cleaning tank. The drying apparatus is arranged beside the basket lifting apparatus, wherein the basket lifting apparatus is adapted to convey into the drying apparatus the extracted basket to be dried. The basket lifting apparatus, the cleaning tank and the drying apparatus are integrally arranged, so as to implement an assembly line operation of cleaning and drying silicon wafers, improving production efficiency.
The present utility model relates to the technical field of coating apparatuses, and particularly relates to an ultra-large-capacity vacuum coating chamber and a vacuum coating apparatus for heterojunction technology. The ultra-large-capacity vacuum coating chamber is provided with an inner cavity, a gas distribution assembly being arranged on the upper portion of the inner cavity. The gas distribution assembly at least comprises a first gas distribution plate and a second gas distribution plate, which are sequentially communicated from top to bottom through gas holes, thereby greatly solving the problem of poor uniformity of a gas flow field in the cavity. Boss-shaped heat conduction members can reduce the distance between a heater and silicon wafers, thus improving heating efficiency and the temperature uniformity, and ensuring the process effect of inner cavity coating. In addition, the mode of linear arrangement of multiple process chambers can synchronously reduce the takt time and greatly increase the capacity of the apparatus.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
9.
PREPARATION METHOD FOR LASER BORON-DOPED BATTERY EMITTER, AND BATTERY AND PREPARATION SYSTEM
Disclosed in the present invention are a preparation method for a laser boron-doped battery emitter, and a battery and a preparation system. The preparation method for the battery emitter comprises the following steps: selecting a silicon substrate; cleaning and texturing the silicon substrate; performing boron diffusion on the silicon substrate to obtain a p+ layer and a borosilicate glass layer; processing a gate line position by using a first laser device, to obtain a p++ region; annealing the silicon substrate by using a second laser device; and removing the borosilicate glass layer from the silicon substrate. The present invention solves the problem of implementing SE preparation by laser one-time doping; borosilicate glass reserved after boron diffusion is processed by laser, the borosilicate glass is used as a boron source, a silicon substrate is doped, a heavily doped region is formed at a gate line position, and after a battery cell is metalized, the contact resistance can be reduced, the filling factor of a battery is increased, recombination of electrons and holes below gate lines is reduced, and an open-circuit voltage of the battery is improved; the recombination is reduced by a lightly doped region, a short-circuit current of the battery cell is increased, and the conversion efficiency of the battery is finally effectively improved.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
A compatible tank structure and a cleaning apparatus, the tank structure comprising an outer tank (100) and an inner tank (110), which is arranged inside the outer tank (100). The inner tank (110) comprises a bottom plate (113) and a side plate (112); the inner tank (110) is internally provided with a carrier (140), in which a workpiece is carried, and contains a solution therein, the solution being used for cleaning the workpiece; and the inner tank (110) is provided with an adjustment mechanism, the adjustment mechanism being used for adjusting the volume of the inner tank (110). By means of the provision of an adjusting baffle plate (120), under the condition of ensuring that the carrier (140) of a silicon wafer (141) is exactly submerged, the corresponding height of the carrier (140) in the inner tank (110) is matched, and different heights have corresponding overflow openings. When the carrier (140) is compatible with a relatively low height, all the overflow openings are opened; when the carrier (140) is compatible with a high height, the adjusting baffle plate (120) of the inner tank (110) blocks the lower overflow openings; and when the carrier (140) is compatible with a relatively high height, the adjusting baffle plate (120) of the inner tank (110) blocks all the overflow openings, and a liquid level in the inner tank is thus guaranteed.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
B08B 3/04 - Nettoyage impliquant le contact avec un liquide
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
B08B 3/00 - Nettoyage par des procédés impliquant l'utilisation ou la présence d'un liquide ou de vapeur d'eau
11.
WIDTH-ADJUSTABLE WATER FILM DRIPPING BLADE APPARATUS AND CHAIN-TYPE WET PROCESSING DEVICE HAVING SAME
The present application relates to the technical field of solar cell manufacturing, and in particular to a width-adjustable water film dripping blade apparatus and a chain-type wet processing device having same. The width-adjustable water film dripping blade apparatus comprises: a water film dripping blade body, the water film dripping blade body being suitable for containing water, and a plurality of nozzle holes being provided in the lower surface of the water film dripping blade body in the length direction; and adjusting mechanisms, the plurality of adjusting mechanisms being movably provided in the water film dripping blade body, and one adjusting mechanism corresponding to one nozzle hole. The adjusting mechanism opens or closes the corresponding nozzle hole, so that the water spraying width of the nozzle hole is increased or decreased. Adjusting mechanisms are provided in the water film dripping blade body, and the nozzle holes in the lower surface of the water film dripping blade body are opened or closed by the adjusting mechanisms. Water spraying heads and the water film dripping blade body are integrally provided to form the nozzle holes, so that the adjusting mechanisms can abut against the nozzle holes and block the nozzle holes, so as to adjust the water spraying width of the water film dripping blade body.
B05C 5/02 - Appareillages dans lesquels un liquide ou autre matériau fluide est projeté, versé ou répandu sur la surface de l'ouvrage à partir d'un dispositif de sortie en contact, ou presque en contact, avec l'ouvrage
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
12.
METHOD AND DEVICE FOR REALIZING ETCHING AND POLISHING OF SILICON WAFER WITH ALKALINE SYSTEM BY USING OZONE
Disclosed are a method and a device for realizing etching and polishing of a silicon wafer with an alkaline system by using ozone. The method comprises: step 1, performing a surface treatment on the silicon wafer using an ozone solution; step 2, cleaning the silicon wafer using deionized water; step 3, etching and polishing the lower surface and side edges of the silicon wafer using an alkali liquor; step 4, cleaning the silicon wafer to remove surface pollutants; step 5, subjecting the silicon wafer to acid pickling using an acid solution; step 6, cleaning the silicon wafer to remove residual liquid medicine; and step 7, drying the silicon wafer. The device includes a slot device, a chain device and a conveying device. The present invention uses ozone to realize etching and polishing of a silicon wafer with an alkaline system, which is safe, environmentally-friendly, low in cost and good in quality.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Provided are a liquid addition system (100) and method. The system (100) comprises a liquid storage tank (10), a sensor (20), a human-computer interaction module (30) and a controller (40). The liquid storage tank (10) is used for storing a liquid and comprises a liquid outlet valve (12), the liquid outlet valve (12) being used for controlling the liquid in the liquid storage tank (10) to flow into a reaction groove (300). The sensor (20) is used for sensing a liquid level of the liquid in the liquid storage tank (10). The human-computer interaction module (30) is used for transferring data input by a user to the controller (40) and selecting an addition method and/or addition mode according to user operation. The addition method comprises manual addition and/or automatic addition. The addition mode comprises quantitative addition and/or dynamic addition. The controller (40) is used for calculating volume of the liquid in the liquid storage tank (10) according to data sensed by the sensor (20) so as to calculate liquid outlet quantity of the liquid storage tank (10), and the controller (40) also can be used for adding the liquid into the reaction groove (300) according to data set by the human-computer interaction module (30). The liquid addition system (100) and method have the advantages of stability, reliability, high accuracy, flexibility and intelligence.
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
14.
METHOD FOR CONTROLLING SPEED OF PROCESS TANK ROBOTIC ARM
A method for controlling the speed of a process tank robotic arm; when placing a wafer cassette into a process tank and when a bottom edge of the wafer cassette is at a certain height from a liquid surface, a robotic arm descends at a constant speed below 200 mm/s, such that the wafer cassette slowly enters the liquid surface; when extracting the wafer cassette from the process tank, the robotic arm ascends at a constant speed below 200 mm/s until the wafer cassette completely separates from the liquid surface;
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
B65G 49/07 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des plaquettes semi-conductrices
B08B 3/04 - Nettoyage impliquant le contact avec un liquide
15.
WAFER PROCESSING DEVICE, SOLUTION TANK THEREOF, AND DISCHARGE METHOD FOR SOLUTION TANK
A wafer processing device, a solution tank thereof, and a discharge method for a solution tank; the solution tank (004) comprises a tank body, an overflow pipe (003) that is in communication with an overflow port on a sidewall of the tank body, a first discharge pipe that is in communication with a discharge port provided at a bottom portion of the tank body, and a liquid discharge valve (006) that is disposed on the first discharge pipe; a second discharge pipe is disposed at a position (point A) within the tank body at a first height from a tank bottom, a part at which the second discharge pipe is located outside of the tank body is in communication with the first discharge pipe by means of a control valve (007). The solution tank (004) may maintain the temperature, volume, and concentration of a liquid and achieve secure discharge.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A monocrystal and polycrystal texturing device includes a device body, various stations arranged in the device body, a transmission device and a control system. The various stations are respectively a dipping acid texturing station, a spray washing station, a drying station, a spray alkali texturing station, a spray washing station, a dipping acid treatment station, a spray washing station, an acid treatment station, a spray washing station and a drying station arranged in sequence. The transmission device is for transmitting a silicon wafer to each station in sequence. The spray alkali texturing station is also connected with a heating device. The control system controls the working status of each station and the heating device. The technology of the present invention has the advantages of stable operation, high efficiency and reliability, and can conduct seamless switching among polycrystal acid texturing, monocrystal alkali texturing, monocrystal acid texturing, and monocrystal alkali texturing.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C30B 33/10 - Gravure dans des solutions ou des bains fondus
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
B08B 3/02 - Nettoyage par la force de jets ou de pulvérisations
A monocrystal and polycrystal texturing method, includes: 1: placing a silicon wafer in an acid liquid, where the acid liquid reacts with the surface of the silicon wafer to conduct acid corrosion; 2: washing the silicon wafer after acid corrosion by water and then drying the silicon wafer; 3: uniformly spreading an alkali liquid on the silicon wafer, where the alkali liquid reacts with the surface of the silicon wafer to conduct alkali corrosion; 4: washing the silicon wafer after alkali corrosion by water; 5: placing the silicon wafer in alkali solution for alkali washing; 6: washing the silicon wafer by water; 7: washing the silicon wafer by acid solution; and 8: washing the silicon after acid washing by water and then drying the silicon wafer. Steps 1 to 8 are conducted during monocrystal texturing, and steps 1 to 2 and steps 5 to 8 are conducted during polycrystal texturing.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A groove-type drying structure includes a drying groove having a cover. The drying groove is internally provided with an inner groove body. The inner groove body forms air current channels with the two sides and the bottom part of the drying groove. The upper part of the drying groove is provided with an air outlet, and the inner groove body is provided with an air compensation port. A heating device and a temperature detector are installed on the air current channels at the two sides. An air wheel is arranged in the air current channel at the bottom part, an air inlet of the air wheel is communicated with an inner chamber of the inner groove body, and a rotating shaft of the air wheel is connected with a motor installed in the bottom part of the drying groove.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F26B 9/06 - Machines ou appareils pour le séchage d'un matériau solide ou d'objets au repos animés uniquement d'une agitation localeAération des placards ou armoires d'appartements dans des tambours ou chambres fixes
F26B 21/04 - Circulation de l'air ou des gaz en cycles fermés, p. ex. totalement à l'intérieur de l'enceinte de séchage partiellement à l'extérieur de l'enceinte de séchage
F26B 21/10 - Commande, p. ex. régulation des paramètres de l'alimentation en gaz de la températureCommande, p. ex. régulation des paramètres de l'alimentation en gaz de la pression
19.
HOOK-TYPE MANIPULATOR DEVICE HAVING DETECTING FUNCTION
A hook-type manipulator device having a detecting function, comprising: a vertical rod (1) and a hook (2) being horizontally provided at the bottom of the vertical rod (1), an sensing plate (3) capable of moving up and down being provided in the vertical rod (1), a sliding chute being provided in the vertical rod (1), the sensing plate (3) being movably embedded in the sliding chute. A switch changeover part (31) is horizontally provided at the top of the sensing plate (3), a hooking detection part (32) is horizontally provided at the bottom of the sensing plate (3) and positioned above the hook (2), a lower mechanical switch (4) that has an upward-facing contact is provided at the top of the vertical rod (1), the switch changeover part (31) is positioned above the lower mechanical switch (4). When a carrier (6) is hooked by the hooking detection part (32), the contact of the lower mechanical switch (4) is pressed down by the switch changeover part (31). Said device intuitively determines, by means of the mechanical switch, whether there is a carrier on the manipulator, and the detecting process is simple and reliable.
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p. ex. en verre
B25J 19/00 - Accessoires adaptés aux manipulateurs, p. ex. pour contrôler, pour observerDispositifs de sécurité combinés avec les manipulateurs ou spécialement conçus pour être utilisés en association avec ces manipulateurs
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
A groove-type drying structure comprises a drying groove (1) provided with a cover (7). An inner groove body (5) is formed in the drying groove (1). Gaps are formed in the two sides of the inner groove body (5), the two sides of the bottom corresponding to the drying groove (1) and the bottom, so to form air channels (4). An air outlet (6) is formed in the upper portion of the drying groove (1). An air supplementing hole (8) communicating with the outside is formed in the inner groove body (5). Heating devices (2) and temperature detection devices (3) are mounted on the air channels on the two sides. A wind wheel (9) is disposed in the corresponding air channel in the bottom. An air inlet of the wind wheel (9) communicates with the inner chamber of the inner groove body (5). A rotation shaft of the wind wheel (9) is connected to a motor (10) mounted outside the bottom of the drying groove (1). The device has a simple structure, is easy to mount, and has a high drying efficiency.
F26B 9/06 - Machines ou appareils pour le séchage d'un matériau solide ou d'objets au repos animés uniquement d'une agitation localeAération des placards ou armoires d'appartements dans des tambours ou chambres fixes
F26B 21/02 - Circulation de l'air ou des gaz en cycles fermés, p. ex. totalement à l'intérieur de l'enceinte de séchage
Disclosed is a monocrystal and polycrystal texturing method. The method comprises: step 1, placing a silicon wafer into acid liquor, and enabling the acid liquor and the surface of the silicon wafer to be subjected to a reaction for acid corrosion; step 2, carrying out washing and drying treatment on the silicon wafer obtained after the acid corrosion; step 3, evenly dropping and spreading alkali liquor on the silicon wafer, and enabling the alkali liquor and the surface of the silicon wafer to be subjected to a reaction for alkali corrosion; step 4, washing the silicon wafer obtained after the alkali corrosion; step 5, placing the silicon wafer into an alkali solution for alkali washing; step 6, washing the silicon wafer; step 7, carrying out acid washing on the silicon wafer by using acid solution; and step 8, carrying out washing and drying treatment on the silicon wafer obtained after the acid washing. The 1 to 8 steps are performed for monocrystal texturing, and the 1 to 2 steps and the 5 to 8 steps are performed for polycrystal texturing. In the present invention, according to the characteristics of the monocrystal texturing and the polycrystal texturing, the monocrystal texturing process steps and the polycrystal texturing process steps are properly combined and arranged, thereby helping to carry out the monocrystal texturing process and the polycrystal texturing process on a same device.
A monocrystal and polycrystal texturing apparatus comprises a device main body (1), stations disposed on the device main body, a transmission device (6), and a control device. The stations are an acid soaking texturing station (11), a spray-washing station (12), a drying station (13), an alkali spraying texturing station (14), a spray-washing station, an alkali soaking treatment station (15), a spray-washing station, an acid treatment station (16), a spray-washing station, and a drying station that are disposed in sequence. The alkali spraying texturing station is connected to a heating device (5). The transmission device is used for conveying a silicon wafer to the stations in sequence. The control system controls working states of the stations and the heating device. The apparatus operates stably, efficiently and reliably and can implement seamless switching between polycrystal acid texturing, monocrystal alkali texturing, and monocrystal acid texturing.
A shower type wet-process texturing device for solar silicon wafer includes: a delivering component used for delivering of a silicon wafer (3) forward, a spraying component located above the delivering component, and a liquid supplying component located below the delivering component. Silicon wafers are placed on the delivering component at interval, the delivering component delivers the silicon wafers forward, and a spraying box (4) sprays medicine liquid downward; the medicine liquid flowing from the delivering component gets together in liquid receiving groove (1). A wet-process texturing method for solar silicon wafer by using the shower type wet-process texturing device is also provided. The corrosive liquid is sprayed or dripped onto the silicon wafers by means of showering, the excess medicine liquid and reaction products flow to the receiving groove, so as to ensure the corrosive uniformity of the silicon wafers.
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