An apparatus for detecting objects comprises an optical interferometer that is configured to receive electromagnetic radiation from a light source, and emit electromagnetic radiation to a detector. The optical interferometer is coupled to an environment and further configured to respond to objects in the environment intruding into an interaction volume of the optical interferometer by varying an intensity of the electromagnetic radiation emitted to the detector based on a property of the objects in the interaction volume. A signal processor is configured to generate an output signal based on the intensity of the electromagnetic radiation emitted to the detector.
G01N 15/0205 - Recherche de la dimension ou de la distribution des dimensions des particules par des moyens optiques
G01N 15/00 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
2.
Peak-detector circuit and method for evaluating a peak of a first input voltage
A peak-detector circuit may include a first input terminal for providing a first input voltage, a first rectifying element with an anode connected to the first input terminal, a first capacitor with a first electrode connected to a cathode of the first rectifying element, a first terminal coupled to the first electrode of the first capacitor, a second rectifying element with a cathode connected to the first input terminal, a second capacitor, a first switch coupling an anode of the second rectifying element to a first electrode of the second capacitor, and a second terminal coupled to the first electrode of the second capacitor.
G01R 19/04 - Mesure des valeurs de pointe d'un courant alternatif ou des impulsions
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
The present disclosure relates to an optoelectronic device for manipulating electromagnetic radiation. Drawbacks of conventional systems like material constraints, system complexity and tuning speed are overcome by the optoelectronic device comprising a substrate with at least one tuning structure arranged on the substrate, wherein the tuning structure comprises an electro-optical material. The tuning structure comprises a first and a second electrical contact. A cover layer covers the at least one tuning structure. An optical structure is arranged on the cover layer. A voltage source is electrically connected to the first and the second electrical contact and provided for generating electric fields within the at least one tuning structure.
A particulate measurement device, comprising: a light source (22); a particulate-light interaction chamber (40); a light detector (24); an optical element; wherein, the optical element is arranged in a light path (30) between the light source (22) and the particulate-light interaction chamber (40) and the optical element is operable to provide an asymmetric light intensity profile within the particulate-light interaction chamber (40), and the asymmetric intensity profile comprises a first part and a second part, the first part having a higher intensity than the second part, wherein the first part is further away from the light detector (24) than the second part.
G01N 15/06 - Recherche de la concentration des suspensions de particules
G01N 15/00 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
An optical element for introducing a predetermined phase delay into incident electromagnetic radiation. The optical element comprises a first layer and a second layer arranged in a propagation path of a portion of the electromagnetic radiation. The first layer comprises a transmission regions configured to introduce a first phase delay into the portion of electromagnetic radiation propagating therethrough. The second layer comprises a metasurface configured to introduce a second phase delay into the portion of electromagnetic radiation propagating therethrough. The metasurface comprises subwavelength sized structures .
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
7.
HETEROGENEOUS RECEPTOR-LIGAND ASSAY DEVICE, IN PARTICUAR LATERAL FLOW TESTING DEVICE, AND RELATED DEVICES AND METHODS
The monitoring device for use in a heterogeneous receptor-ligand assay for detecting presence or amount of an analyte in a liquid comprises - one or more electrical consumers (41; D, T), e.g., a first light source (41); - a power supply unit (50) for supplying said one or more electrical consumers (41; D, T) with electrical energy. The power supply unit (50) comprises an energy receiving unit (51) for receiving energy from an external device (200), such as from a mobile phone. The energy receiving unit (51) can comprise a coil for wireless power transfer by electromagnetic induction. The first light source (41) can in particular be a vertical-cavity surface- emitting laser. The heterogeneous receptor-ligand assay device (100) comprises in addition to the monitoring device a carrier (10) held in the carrier holder (10a).
G01N 33/543 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet avec un support insoluble pour l'immobilisation de composés immunochimiques
We disclose herein a method of compressing data for data transfer within an electronic device. The method comprises: receiving, at a first processing member of the electronic device, a plurality of data samples produced by a member of the electronic device, wherein the data samples comprise numerical bits; restructuring, by the first processing member, the plurality of data samples into a plurality of data packets; labelling each data packet with a sample indicator bit to indicate a plurality of groups across the plurality of data packets; transferring a bit stream comprising at least some of the plurality of data packets across an interface of the electronic device to a receiving member of the electronic device; and decoding the bit stream, by a second processing member of the electronic device, to obtain at least some of the plurality of the data samples, the decoding being based at least in part on the sample indicator bits.
Agency for Science, Technology and Research (Singapour)
ams AG (Autriche)
Inventeur(s)
Liu, Zhengtong
Teng, Jinghua
Chu, Hong Son
Wang, Qian
Deng, Jie
Ang, Soo Seng Norman
Tang, Xiao Song Eric
Png, Ching Eng Jason
Fasching, Gernot
Mai, Lijian
Singulani, Anderson
Pulko, Jozef
Abrégé
Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An optical apparatus comprising: a light-emitting device (106) coupled to a controllable voltage supply (301) configured to provide a supply voltage to the light-emitting device; a temperature sensor (304) arranged to sense a temperature of the light-emitting device; a driver die (300,800,900) comprising a driver circuit for driving the light-emitting device; and a control module (310) configured to: receive a voltage at the output of the light-emitting device; determine a target voltage that is to be provided at the output of the light-emitting device, wherein the control module is configured to determine the target voltage based on said temperature; and output a control signal to control the output of the light-emitting device to be at the target voltage in dependence on the voltage at the output of the light-emitting device.
A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
12.
Method for starting a system-on-a-chip without read only memory, system on-a- chip without read only memory and headphone
A method for starting a system-on-a-chip, SoC, without read only memory, ROM, comprises the steps of receiving, by a processor comprised by the SoC, a reset signal, monitoring, by a monitoring component comprised by the SoC, a connection between the processor and at least a non-volatile memory, both comprised by the SoC, upon occurrence of a first read access of the processor to the non-volatile memory via the connection checking, by the monitoring component, whether a data value returned in response to the first read access via the connection conforms to a pre-set value, and if the returned data value differs from the pre-set value, stopping, by the monitoring component, operation of the processor.
A photodetector device for detection of electromagnetic radiation comprises a target substrate (500) having a main surface (550) and a multitude of photodetector chips (55). Each photodetector chip (55) comprises a device layer (20) that is arranged at a backside of the photodetector chip (55), wherein a photodetector element (50) is arranged in the device layer (20), and an intermetal dielectric (60) that is arranged at a front side of the photodetector chip (55), wherein contact pads (70) electrically connected to the photodetector element (50) are embedded in the intermetal dielectric (60) and accessible via pad openings (80) in the intermetal dielectric (60). Each detector chip (55) is mounted on the target substrate (500), such that the front side of the detector chip (55) faces the main surface (550) of the target substrate (500). A method for fabricating such photodetector device is also provided.
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
14.
PARTICULATE MATTER DETECTOR AND METHOD FOR DETECTING PARTICULATE MATTER
A particulate matter detector (1) a first, a second and a third waveguide (11, 12, 13), the third waveguide (13) being free of cladding, and a waveguide splitter (14). The first waveguide (11) is coupled to a light emitter (10) and comprises an interrogation region (16) formed by a cladding- free surface of the first waveguide (11), the surface being exposed to a gaseous environment (2) and configured to accumulate directly thereon particulate matter (3) from the gaseous environment (2). During a measurement phase, a first intensity of light in the first waveguide (11) is set for determining a change in the intensity of the light detected by the detector (15) in dependence of accumulated particulate matter (3). During a cleaning phase, a second intensity larger than the first intensity is set for directing the accumulated particulate matter (3) from the interrogation region (16) to the third waveguide (13) via optical forces.
An apparatus for sensing particulate matter in a fluid includes a fluid flow conduit fluidically connected to an interaction chamber; a light source positioned to illuminate the interaction chamber; and a light detector assembly positioned to receive light scattered by particulate matter present in the interaction chamber. The light detector assembly includes a light detector; and an optical element, the optical element configured to provide light to the light detector based on an incidence angle of the scattered light.
A noise cancellation system for an ear-mountable playback device having a speaker, a feedforward microphone and an error microphone comprises a filter chain for coupling the feedforward microphone to the speaker, the filter chain comprising a series connection or parallel connection of a coarse filter and a fine filter, and a noise control processor. The fine filter is formed of a set of sub-filters having a predefined frequency range, wherein the predefined frequency range of each of the sub-filters together forms an effective overall frequency range of the fine filter. The noise control processor is configured to calculate an error signal based on a first noise signal sensed by the feedforward microphone and on a second noise signal sensed by the error microphone, to perform an adaptation of coarse filter parameters of the coarse filter based on the error signal, and to perform a limited adaptation of fine filter parameters of each of the sub-filters based on the error signal, wherein limits of the limited adaptation comprise the predefined frequency ranges of the sub-filters and at least one of a gain limit and a Q factor limit.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
Bus system comprising a first bus and a second bus, wherein the first bus is connected to the second bus through a bridge and a multiplexer. A first master has access to the second bus via the first bus, the bridge and the multiplexer. A second master has access to the second bus via the multiplexer. The bridge comprises an arbitration unit which is arranged to allow both a first master and a second master access to the second bus in such a way that no access is disturbed or lost.
An audio system for an ear mountable playback device comprises a compensation filter configured to generate a third compensation signal by applying filter operations to an audio signal, and an error compensation unit configured to generate a compensated error signal on the basis of the third compensation signal and a disturbed audio signal from an error microphone. The audio system further comprises a first noise filter configured to be adapted based on the compensated error signal, and a detection unit configured to estimate the acoustic leakage condition on the basis of the first noise filter or of the disturbed audio signal and an audio output signal. The compensation filter is configured to be adapted based on the acoustic leakage condition.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
Lighting Module for a VehicleA lighting module (200, 400, 500) for a vehicle (600) is disclosed. The lighting module comprises a plurality of Light-Emitting-Diodes (LEDs) (210, 410, 510) for vehicle exterior lighting, and at least one proximity sensor (215) for vehicle parking assistance. The lighting module also comprises a circuit (490, 590) configured to control the plurality of LEDs and the at least one proximity sensor. Also disclosed is a method of manufacturing the lighting module.
A method for manufacturing a sensor (10) is provided, the method comprising the steps of providing a lower cladding layer (11), depositing a waveguide layer (12) on the lower cladding layer (11), forming a sensing waveguide (13) and a reference waveguide (14) by photolithography and etching the waveguide layer (12) in places, forming a photoresist structure (15) on at least a part of the sensing waveguide (13) by photolithography, depositing an upper cladding layer (16) on the photoresist structure (15), the sensing waveguide (13), the reference waveguide (14) and the lower cladding layer (11), removing the photoresist structure (15) with the part of the upper cladding layer (16) deposited on the photoresist structure (15) so that an opening (17) within the upper cladding layer (16) is formed above at least a part of the sensing waveguide (13), and depositing a functionalization material (18) within the opening (17), wherein from the waveguide layer (12) at least one auxiliary structure (22) is formed by photolithography and etching the waveguide layer (12) in places, wherein the opening (17) is arranged above the auxiliary structure (22). Furthermore, a sensor (10) and a portable device (26) are provided.
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
G01N 21/77 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
21.
INTEGRATED SENSOR MODULES FOR DETECTION OF CHEMICAL SUBSTANCES
An apparatus includes an integrated sensor module for detection of chemical substances. The sensor module includes a UV radiation source operable to emit UV radiation onto a sample. The sensor module also includes a sensor including dedicated channels disposed so as receive UV radiation reflected by the sample. Each of the channels is selectively sensitive to a different respective portion of the UV spectrum; collectively, the channels cover at least part of the UV spectrum sufficient for reconstruction of a spectral curve of the sample. An electronic control unit can be used to identify a composition of the sample based on signals from the channels.
G01J 3/36 - Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
G01N 21/33 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
G01N 21/31 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique
An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.
An optical module (2) comprising an emitter (4) and a semiconductor device (6), the emitter (4) being attached to the semiconductor device (6) and being separated from the semiconductor device (6) by a gap (16), wherein the semiconductor device (6) comprises a waveguide (10) and a diffraction grating (8) located within semiconductor of the semiconductor device (6), the diffraction grating (8) being a coupling diffraction grating configured to couple light emitted from the emitter (4) into the waveguide (8), and wherein the semiconductor device (6) further comprises an additional diffraction grating (14) which is provided on a surface of the semiconductor device (6) which faces the emitter (4).
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/34 - Moyens de couplage optique utilisant des prismes ou des réseaux
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
24.
METHOD OF PRODUCING A SEMICONDUCTOR BODY WITH A TRENCH, SEMICONDUCTOR BODY WITH AT LEAST ONE TRENCH AND SEMICONDUCTOR DEVICE
A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. A passivation layer is formed on the oxide layer and the bottom of the trench. The passivation layer is removed from the bottom of the trench. Finally, a metallization layer is deposited into the trench.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
25.
Audio system and signal processing method for an ear mountable playback device
An audio system for an ear mountable playback device comprises a speaker and an error microphone that is configured to sense sound being output from the speaker and ambient sound. The audio system further comprises a detection engine that is configured to determine a driver response between the speaker and the error microphone, and to estimate a leakage condition from the determined driver response.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
An electric circuitry for signal transmission comprises a transmission gate having an input node to apply an input signal. The transmission gate includes a first transistor having an electric conductive channel of a first type of conductivity and a second transistor having an electric conductive channel of a second type of conductivity. The electric circuitry comprises a control circuit to control the signal transmission of the transmission gate. The control circuit is configured to generate a first and second control signal to control the conductivity of the first and second transistor in dependence on a voltage level of the input signal.
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 17/94 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par la manière dont sont produits les signaux de commande
27.
System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
The system-on-chip camera comprises a semiconductor body with an integrated circuit, a sensor substrate, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a lens or an array of lenses on a surface of incidence. Filter elements, which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.
An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
29.
Sensor front-end and method for operating a sensor device
A sensor front-end is presented for processing a measurement signal from a sensing unit, wherein the sensing unit is configured to receive a stimulus signal from an evaluation unit of the sensor front-end, generate the measurement signal from the stimulus signal by altering an amplitude of the stimulus signal based on a measurement parameter, and provide the measurement signal to the evaluation unit. The sensor front-end comprises the evaluation unit that is configured to generate a simulated measurement signal from the stimulus signal by controlling an amplitude of the stimulus signal based on a predetermined control variable, to generate a simulated output signal based on the stimulus signal and the simulated measurement signal, and to determine an error condition based on a comparison of the simulated output signal and the predetermined control variable or a signal derived from the predetermined control variable.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H02K 11/215 - Dispositifs utilisant un effet magnétique, p. ex. des éléments à effet Hall ou magnéto-résistifs
30.
PIXEL STRUCTURE, IMAGE SENSOR DEVICE AND SYSTEM WITH PIXEL STRUCTURE, AND METHOD OF OPERATING THE PIXEL STRUCTURE
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
H04N 13/254 - Générateurs de signaux d’images utilisant des caméras à images stéréoscopiques en combinaison avec des sources de rayonnement électromagnétique pour l’éclairage du sujet
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
31.
BONDED STRUCTURE AND METHOD FOR MANUFACTURING A BONDED STRUCTURE
A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.
A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0312 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIVBIV, p.ex. SiC
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A monolithically integrated optical assembly comprising a waveguide configured to receive light and a coupling element configured to couple light into the waveguide. The monolithically integrated optical assembly comprises an optical element comprising a pattern of features configured to control a propagation of light incident on the coupling element.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/124 - Lentilles géodésiques ou réseaux intégrés
G02B 6/34 - Moyens de couplage optique utilisant des prismes ou des réseaux
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
A method of sensing a level of ambient light in an electronic device comprising sensing a combined light level of ambient light and light from the display, integrating this to determine an integrated light level, determining an integrated display light level, and compensating the integrated light level using the integrated display light level to determine the ambient light level. The device modulates the display between first and second brightness levels and determining the integrated display light level comprises sensing a combination of light from the display and ambient light when at each of the first and second brightness levels, determining a difference, and applying a calibration value to the difference to determine the integrated display light level.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
35.
Signal processor, processor system and method for transferring data
A signal processor is provided, the signal processor comprising a transaction buffer, a processing memory, a processing unit, and a bus connection that is configured to be connected to a bus system for data transmission, wherein the transaction buffer is configured to receive and save a set of data packets from the bus system, the data packets each comprise payload data and attributed address data, where the address data relate to an address of the processing memory, the processing memory is connected with the processing unit, the processing unit is configured to run a process routine, and the transaction buffer is configured to transfer payload data between the processing memory and the transaction buffer at a selectable instant of time during the process routine run by the processing unit. Furthermore, a method for transferring data is provided.
A semiconductor body comprises a buried layer of a first type of conductivity, a first region of the first type of conductivity, a shallow region of a second type of conductivity at a first surface of the semiconductor body, a sinker of the first type of conductivity located at the first surface of the semiconductor body, and a separating region of the first type of conductivity encircling at least one of the sinker and the buried layer. The first region is between the buried layer and the shallow region.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
37.
TEST STRIP, MONITORING DEVICE AND METHOD FOR FABRICATING A TEST STRIP
A test strip comprises a porous material, a photodetector and a substrate with a first and a second side. The porous material is attached to the first side of the substrate. The photodetector is attached to the second side of the substrate.
G01N 21/27 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
G01N 33/543 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet avec un support insoluble pour l'immobilisation de composés immunochimiques
38.
Semiconductor device and method for manufacturing a semiconductor device
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventeur(s)
Hofrichter, Jens
Kaschowitz, Manuel
Poelzl, Bernhard
Rohracher, Karl
Jouve, Amandine
Balan, Viorel
Crochemore, Romain
Fournel, Frank
Maitrejean, Sylvain
Abrégé
A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
39.
Audio system and signal processing method for an ear mountable playback device
An audio system for an ear mountable playback device includes a speaker, an error microphone, which senses sound being output from the speaker, and a sound control processor. The processor is configured for controlling and/or monitoring a playback of a detection signal or a filtered version of the detection signal via the speaker, recording an error signal from the error microphone, and determining whether the playback device is in a first state, where the playback device is worn by a user, or in a second state, where the playback device is not worn by a user, based on processing of the error signal.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
G10L 25/78 - Détection de la présence ou de l’absence de signaux de voix
An apparatus comprises an optical sensor package that includes an optical sensor die. The optical sensor package further includes a reflow-stable optical diffuser disposed over the optical sensor die. The optical diffuser is surrounded laterally by an epoxy molding compound.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).
A sensing system comprising a measurement sensor configured to detect electromagnetic radiation and a reference sensor configured to detect a source of measurement uncertainty. The sensing system further comprises a shield configured to reduce an interaction between the electromagnetic radiation and the reference sensor.
A voltage regulator comprises an output transistor with a controlled section connected between a first supply terminal and an output terminal. An amplifier comprises a reference input and a feedback input. A current mirror comprising a replica transistor. The current mirror is configured to mirror and attenuate a load current supplied by the output transistor to the replica transistor. A filter circuit is coupled to a controlled section of the replica transistor and coupled to the feedback input of the amplifier via the output terminal.
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
44.
Mobile communications device without physical screen-opening for audio
A mobile communications device that does not have a physical opening on the screen for audio is operable to transmit a signal to which a photoacoustic effect can be employed by interaction with water vapor in an ear of a user so as to generate audio in the ear or the immediate vicinity of the user's ear. Related methods, apparatuses, systems, techniques and articles are also described.
An apparatus includes a light senor having directional sensitivity. The light sensor includes multiple light sensitive elements disposed below the same aperture. Each of the light sensitive elements has a respective field of view through the aperture that differs from the field of view of the other light sensitive elements. Signals from the light sensor can facilitate determining the direction of incoming light.
An audio system for an ear mountable playback device comprises a speaker, an error microphone predominantly sensing sound being output from the speaker and a feed-forward microphone predominantly sensing ambient sound. The audio system further comprises a voice activity detector which is configured to record a feed-forward signal from the feed-forward microphone. Furthermore, an error signal is recorded from the error microphone. A detection parameter is determined as a function of the feed-forward signal and the error signal. The detection parameter is monitored and a voice activity state is set depending on the detection parameter.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
G10L 25/78 - Détection de la présence ou de l’absence de signaux de voix
47.
Audio system and signal processing method for an ear mountable playback device
An audio system for an ear mountable playback device comprises a speaker, an error microphone configured to predominantly sense sound being output from the speaker and a further microphone configured to predominantly sense ambient sound. The system further comprises a first noise filter coupling the further microphone to the speaker, a second noise filter coupling the error microphone to the speaker and an adaptation engine. The adaptation engine is configured to adapt a response of the first noise filter depending on error signals from at least the error microphone, estimate a leakage condition from the response of the first noise filter, and adapt a response of the second noise filter depending on the estimated leakage condition.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
A host side is adapted to be connected to a client side by means of a clock wire, a selection wire, a first data wire and a second data wire. The host side is configured to transmit a digital selection signal over the selection wire to the client side, the selection signal determining either an audio transmission mode or a client communication mode. Further, the host side is configured to transmit digital audio data of a first channel and a second channel over the first and the second data wire to the client side in the audio transmission mode, and to perform client communication over the first and the second data wire in the client communication mode.
H04L 65/61 - Diffusion en flux de paquets multimédias pour la prise en charge des services de diffusion par flux unidirectionnel, p. ex. radio sur Internet
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
H04L 65/1069 - Établissement ou terminaison d'une session
49.
DATA STORAGE APPARATUS COMPRISING CELL SECTION OPERABLE AS DOSIMETER AND METHOD OF OPERATING
A data storage apparatus comprises an integrated circuit further comprising a control unit (100) and a memory array (400) of charge-based memory cells. The memory array (400) comprises a first subsection (410) which is operable as a memory, and comprises a second subsection (420) which is operable as a dosimeter. The control unit (100) is operable to provide a reference current (Iref) and to conduct memory access operations to access the memory with reference to the reference current (Iref). The control unit (100) is further operable to analyze a statistical distribution of read currents (Iread) by using memory access operations in the second subsection (420). Said analysis involves counting of logical read errors of the memory access operations and calibrating the reference current (Iref) depending on a number of counted logical read errors being indicative also of a Total Ionizing Dose, TID.
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
G11C 16/26 - Circuits de détection ou de lectureCircuits de sortie de données
G11C 7/14 - Gestion de cellules facticesGénérateurs de tension de référence de lecture
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence
G11C 29/04 - Détection ou localisation d'éléments d'emmagasinage défectueux
G11C 29/50 - Test marginal, p. ex. test de vitesse, de tension ou de courant
A current mirror arrangement comprises an input stage (10) with a series connection of an input mirror transistor (11) and an input cascode transistor (12) between supply terminals (VDD_HV, GND). A buffer stage (20) is configured to generate an input control voltage (vbiasn) based on an input voltage (vin) for a gate terminal of the input mirror transistor (11), to generate an intermediate control voltage (vbiasn_i) at a replica terminal (23) based on the input voltage (vin) and to generate a compensation control voltage (vcomp) based on the input control voltage (vbiasn), the buffer stage (20) comprising a compensation current mirror with an input side connected to a feedback terminal (25) and with an output side being connected to the replica terminal (23). An output stage (30) comprises a compensation stage (35) and a series connection of an output mirror transistor (31) and an output cascode transistor (32), wherein the compensation stage (35) comprises a compensation resistor (RC) connected between the replica terminal (23) and an output control terminal (37) that is coupled to a gate terminal of the output mirror transistor (31), is configured to generate, at the output control terminal (37), an output control voltage (vbiasn_i+1) based on the compensation control voltage (vcomp), and is configured to generate, at a compensation terminal (39) being connected to the feedback terminal (25), a compensation current based on the compensation control voltage (vcomp).
In one embodiment a temperature sensor has a first sensing unit operable to provide a first pseudo-differential unipolar analog signal representing a first temperature value of a power unit, an interface circuit operable to provide a second pseudo-differential unipolar analog signal representing a second temperature value of a powered unit, a multiplexer circuit which is operable to provide a pseudo-differential unipolar multiplexed analog signal comprising the first analog signal or the second analog signal, and a first analog-to-digital converter, ADC, component operable to provide a first digital signal from the multiplexed analog signal, the first digital signal comprising a digital representation of the first analog signal or the second analog signal. Therein, the operation of the first ADC component is synchronized with a control signal designed for activating the power unit.
G01K 7/01 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments semi-conducteurs à jonctions PN
An amplifier circuit includes a circuit path of serially connected complementary type transistors. First and second feedback loops include a loop amplifier, the transistors of the circuit path and a corresponding resistor.
An apparatus and method for current peak detection. The apparatus includes a pulse laser diode array, a sense resistor, a capacitive voltage divider (CVD) electrically coupled to the pulse laser diode array, a first current rectifier, a second current rectifier, a first current peak detector, a second current peak detector, an analog-to-digital converter (ADC) operable to convert the analog outputs from each current peak detector to a digital output signal, and a digital signal processing (DSP) unit operable to detect, from the digital output signal, a current peak pulse at the top and the bottom of the sense resistor.
G01R 19/04 - Mesure des valeurs de pointe d'un courant alternatif ou des impulsions
G01R 19/25 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe utilisant une méthode de mesure numérique
G01S 7/48 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
An apparatus and method for circuit failure detection for a diode array. The apparatus includes a diode array, a diode array test circuit electrically coupled to the diode array and operable to perform circuit failure detection during a test mode when a test input voltage is applied, the diode array test circuit includes an input resistor, an input voltage node, a buffered amplifier circuit, and a plurality of amplifier circuit switches. The apparatus further includes a current detector electrically coupled to the output of the buffered amplifier circuit and operable to determine, during the test mode, a current measurement of the pulse laser diode array.
An optical filter (100) and method of manufacturing an optical filter comprising a stack of layers, the stack comprising at least one layer comprising amorphous deuterated silicon (104), and at least layer of a dielectric material (106), wherein within a targeted transmission band the refractive index of the dielectric material is less than a refractive index of the amorphous deuterated silicon (104).
A sensing system comprising a light filtering apparatus configured to pass a first wavelength of light corresponding to an emission spectrum characteristic of Mercury. The sensing system comprises a sensor configured to receive light passed by the light filtering apparatus and produce a sensor response that is indicative of the light passed by the light filtering apparatus. The sensing system comprises a processor configured to use the sensor response to distinguish between light emitted by a fluorescent light source and light emitted by a light emitting diode.
An optical device is disclosed. The optical device comprises a substrate, a radiation- emitting device such as a vertical cavity surface emitting laser (VCSEL) disposed on the substrate, and a conformal coating layer covering the radiation-emitting device. The conformal coating layer is moisture-resistant and substantially transparent to electromagnetic radiation emissions of the radiation-emitting device. Also disclosed are methods of manufacturing such an optical device.
H01S 5/02234 - Boîtiers remplis de résineBoîtiers en résine
H01S 5/0683 - Stabilisation des paramètres de sortie du laser en surveillant les paramètres optiques de sortie
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A sensor arrangement for light sensing for light-to-frequency conversion. The sensor arrangement includes a photodiode, an analog-to-digital converter (ADC) operable to perform a chopping technique in response to a first clock signal (CLK1), and convert a photocurrent (IPD) into a digital comparator output signal (LOUT). The ADC includes a sensor input coupled to the photodiode, an output for providing the digital comparator output signal (LOUT), an integrator including an integrator input coupled to the sensor input and operable to receive an integrator input signal, a first set of chopping switches coupled to a first amplifier, a second set of chopping switches electrically coupled to an output of the first amplifier and electrically coupled to input terminals of a second amplifier, and an integrator output providing an integrator output signal (OPOUT).
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
H03M 1/06 - Compensation ou prévention continue de l'influence indésirable de paramètres physiques
H04N 5/361 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au courant d'obscurité
H03M 1/52 - Intégration du signal d'entrée avec retour linéaire au niveau de référence
An integrated sensing system for characterizing blood flow in a subject includes a light source assembly including a light source configured to emit light of a particular wavelength. The integrated sensing system includes an integrated circuit electrically connected to the light source assembly. The integrated circuit includes a light detector assembly including multiple light detectors configured to detect light of the particular wavelength; and a correlator configured to determining a delay between optical signals detected by respective light detectors of the light detector assembly.
A system including a multi-layer analog neural network that has a single layer of physical analog neurons that is re-usable for implementing a plurality of layers of the multi-layer analog neural network. Each of the physical analog neurons is configured to receive a neuron input and to process the neuron input to generate a neuron output that is fed as input to all physical analog neurons of the single layer, and each of the physical analog neurons includes a respective weight memory. The system controller is operable to obtain, for each physical analog neuron, a respective set of neuron weight vectors with each neuron weight vector corresponding to a respective layer of the plurality of layers of the multi-layer analog neural network; store, for each physical analog neuron, the respective set of neuron weights in the respective weight memory of the physical analog neuron.
G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
A method for forming a lift-off mask structure (1) comprises providing a substrate body (10), depositing a layer (11) of bottom anti-reflective coating, BARC, over a surface of the substrate body (10), and depositing a layer (12) of photosensitive resist over the BARC layer (11). The method further comprises exposing the resist layer (12) to electromagnetic radiation (21) through a photomask (20), and forming the lift-off mask structure (1) by applying a developer for selectively removing a portion of the BARC layer (11) and of the resist layer (12) such that an underlying portion of the surface of the substrate body (10) is exposed.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
62.
Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via
An intermetal dielectric and metal layers embedded in the intermetal dielectric are arranged on a substrate of semiconductor material. A via hole is formed in the substrate, and a metallization contacting a contact area of one of the metal layers is applied in the via hole. The metallization, the metal layer comprising the contact area and the intermetal dielectric are partially removed at the bottom of the via hole in order to form a hole penetrating the intermetal dielectric and extending the via hole. A continuous passivation is arranged on sidewalls within the via hole and the hole, and the metallization contacts the contact area around the hole. Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
b) to apply a second input signal (inn). A control circuit (200) is configured to control a first controllable current source (110) in a first current path (101) and a second controllable current source (120) in a second current path (102) in response to at least one of a first potential of a first node (N1) of the first current path (101) and a second potential of a second node (N2) of the second current path (102). The first node (N1) is located between a first transistor (150) and the first controllable current source (110), and the second node (N2) is located between a second transistor (160) and the second controllable current source (120).
A micro-electro-mechanical system, MEMS, microphone assembly comprises an enclosure defining a first cavity, and a MEMS microphone arranged inside the first cavity. The microphone comprises a first die with bonding structures and a MEMS diaphragm, and a second die having an application specific integrated circuit, ASIC. The second die is bonded to the bonding structures such that a gap is formed between a first side of the diaphragm and the second die, with the gap defining a second cavity. The first side of the diaphragm is interfacing with the second cavity and a second side of the diaphragm is interfacing with the environment via an acoustic inlet port of the enclosure. The bonding structures are arranged such that pressure ventilation openings are formed that connect the first cavity and the second cavity.
A capacitance to digital converter, CDC, has a first and a second reference terminal for receiving first and second reference voltages, a reference block comprising one or more reference charge stores and being coupled to the first and second reference terminals via a first switching block, a scaling block for providing at third and fourth reference terminals downscaled voltages from the first and second reference voltages depending on a scaling factor, first and second measurement terminals for connecting a capacitive sensor element, the first measurement terminal being coupled to the third and fourth reference terminals via a second switching block, and a processing block coupled to the reference block and to the second measurement terminal and being configured to determine a digital output signal based on a charge distribution between the sensor element and the reference block and based on the scaling factor, the output signal representing a capacitance value of the sensor element.
G01R 27/26 - Mesure de l'inductance ou de la capacitanceMesure du facteur de qualité, p. ex. en utilisant la méthode par résonanceMesure de facteur de pertesMesure des constantes diélectriques
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
H03M 3/00 - Conversion de valeurs analogiques en, ou à partir d'une modulation différentielle
66.
Sensor device, sensor module, imaging system and method to operate a sensor device
A sensor device is provided and includes an array of photodetectors. A readout circuit is connected to the array of photodetectors and provides dedicated readout paths for each photodetector in the array, respectively. Further, the readout circuit includes at least one control terminal. An array of time-to-digital converters is electrically connected to converter output terminals of the readout circuit. Depending on a control signal to be applied at the at least one control terminal, the readout circuit is arranged to electrically connect through the readout paths of photodetectors of a first subarray (11) to the converter output terminals of the readout circuit, respectively, thereby rendering the photodetectors of the first subarray active and photodetectors of a second subarray inactive.
An integrated optical biosensor module includes one or more light sources operable to produce light for emission from the module, and an integrated circuit chip including a photosensitive region. The photosensitive region includes one or more photodetectors operable to detect light produced by the one or more light sources and reflected by a subject that is outside the module. The integrated circuit chip is operable to determine a physiological condition of the subject based on signals from the one or more photodetectors. A clear mold covering encapsulates the one or more light sources, wherein the clear mold covering includes one or beam shaping elements each of which is disposed so as to intersect a path of a light beam from an associated one of the one or more light source.
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
An optical device includes an emitter operable to emit a first light wave. The optical device also includes a detector operable to detect a second light wave that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave that is based on the first light wave. The optical device further includes an interference filter disposed on the detector. The interference filter includes a first filter portion and a second filter portion having a first set of layers formed from a first material and a second set of layers formed from a second, different material. The interference filter is operable to attenuate undesired light waves in multiple distinct environments based on the first and second sets of layers in the second filter portion.
It is proposed to use self-mixing interferometry for determining an absorption. The monitoring device for use in lateral flow testing for detecting presence or amount of an analyte (1) in a liquid (L) comprises a housing, the housing comprising a carrier holder for holding a carrier (10) for transport of the liquid (L); at least a first light source (41) which is a resonant-cavity light source having a cavity (C); and an evaluation unit (50), operationally connected to at least the first light source (41) for detecting a measurement signal. The first light source (41) is structured and arranged to illuminate with light a test range in a test area (13) of a carrier (10) held in the carrier holder; and to couple back into the cavity (C) of the first light source (41) a portion of the light coming back from the test range (13).
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
G01N 21/78 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique produisant un changement de couleur
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
G01N 21/77 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique
G01N 33/558 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet utilisant la diffusion ou la migration de l'anticorps ou de l'antigène
70.
LOW-DROPOUT REGULATOR FOR LOW VOLTAGE APPLICATIONS
A low-dropout regulator (1) for low voltage applications comprises a buffer circuit (500) being arranged between an output terminal (O100) of an error amplifier (100) and a control node (C200) of a pass device (200). The buffer circuit (500) includes a driver comprising a first transistor (11) being embodied as an NMOS transistor. The output terminal (O100) of the error amplifier (100) is coupled to the control node (C11) of the first transistor (11). The control node (C200) of the pass device (200) is coupled to an internal node (N1) of a first current path (10) including the first transistor (11). The low-dropout regulator (1) has high load capability, even if an input supply voltage is very low.
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
71.
DRIVER CIRCUIT FOR LOW VOLTAGE DIFFERENTIAL SIGNALING, LVDS, LINE DRIVER ARRANGEMENT FOR LVDS AND METHOD FOR OPERATING AN LVDS DRIVER CIRCUIT
In one embodiment a driver circuit for low voltage differential signaling, LVDS, comprises a phase alignment circuit (20) comprising an input (21) configured to receive an input signal (Vin), a first output (22) configured to provide an internal signal (Vint) as a function of the input signal (Vin), and a second output (23) configured to provide an inverted internal signal (VintN), which is the inverted signal of the internal signal (Vint), and an output driver circuit (30) coupled to the phase alignment circuit (20), the output driver circuit (30) comprising a first input (31) configured to receive the internal signal (Vint), a second input (32) configured to receive the inverted internal signal (VintN), a first output (33) configured to provide an output signal (Vout) as a function of the internal signal (Vint) and a second output (34) configured to provide an inverted output signal (VoutN) which is the inverted signal of the output signal (Vout). Therein the phase alignment circuit (20) is configured to provide the inverted internal signal (VintN) with its phase being aligned to a phase of the internal signal (Vint).
H03K 5/151 - Dispositions dans lesquelles des impulsions sont délivrées à plusieurs sorties à des instants différents, c.-à-d. distributeurs d'impulsions avec deux sorties complémentaires
H03K 19/094 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs à semi-conducteurs utilisant des transistors à effet de champ
72.
Formation of three-dimensional structures using grey-scale photolithography
Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask. An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present disclosure relates to a photodiode device (1), which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device (1) comprises a semiconductor substrate (2), at least one doped well (6) of a first type of electric conductivity at a main surface (3) of the substrate (2) and at least one doped region (9) of a second type of electric conductivity being adjacent to the doped well (6). The at least one doped well (6) and the at least one doped region (9) are electrically contactable. On a portion of an upper surface (7) of the doped well (6) a protection structure (11) is arranged. The protection structure (11) protects the upper surface (7) of the underlying doped well (6) from an etching process for removing a spacer layer (27).
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
74.
Integrated optical transducer and method for fabricating an integrated optical transducer
An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side. The transducer further comprises an application specific integrated circuit, ASIC, die having an evaluation circuit configured to detect a deflection of the MEMS diaphragm, in particular of the second side of the MEMS diaphragm. The MEMS die is arranged with respect to the ASIC die such that a gap with a gap height is formed between the second side of the diaphragm and a first surface of the ASIC die and the MEMS diaphragm, the ASIC die and a suspension structure of the MEMS die delineate a back volume of the integrated optical transducer.
H04R 23/00 - Transducteurs autres que ceux compris dans les groupes
G01H 9/00 - Mesure des vibrations mécaniques ou des ondes ultrasonores, sonores ou infrasonores en utilisant des moyens sensibles aux radiations, p. ex. des moyens optiques
75.
HUMIDITY SENSOR INCORPORATING AN OPTICAL WAVEGUIDE
A humidity sensor system (10) includes a monolithically integrated semiconductor device (12). The monolithically integrated semiconductor device (12) includes an optical waveguide (14), a thermo-electric cooling device (16), a temperature measurement probe (18), and control circuitry (26) operable to cause the thermo-electric cooling device (16) to adjust a temperature of the monolithically integrated semiconductor device (12). The optical waveguide (14) is operable to receive an input optical signal from a light source (20) and to provide an output optical signal for sensing by a light detector (22). The humidity sensor system (10) further includes processing circuitry operable to receive output signals from the light detector (22) and from the temperature measurement probe (18) and operable to determine a relative humidity based on the output signals from the light detector (22) and the temperature measurement probe (18).
G01N 25/68 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant la teneur en eau en recherchant le point de rosée par variation de la température d'une surface à condensation
An apparatus comprises a display screen, and an optical sensor module which is disposed behind the display screen. The optical sensor module further comprises a light emitter operable to generate light having a wavelength for transmission through the display screen toward a target object. A light sensor is operable to sense light reflected by the target object and having the wavelength. A reducer is arranged for reducing the optical power density by increasing a diameter of a light beam generated by the light emitter on the display screen, wherein the reducer is disposed between the light emitter and the display screen so as to intersect the light beam generated by the light emitter.
H01L 27/32 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux avec des composants spécialement adaptés pour l'émission de lumière, p.ex. panneaux d'affichage plats utilisant des diodes émettrices de lumière organiques
Techniques are described for portable computing devices and other apparatus that include an ambient light sensor. The techniques can be particularly advantageous for situations in which the ambient light sensor is disposed behind a display screen of a host device such that ambient light detected by the sensor passes through the light emitting display before being detected by the sensor.
G09G 3/3208 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED]
78.
Calculation processor and calculation method for determining an exponential function
A calculation processor for determining a digital output value from a digital input value based on an exponent value a, the processor comprising a first calculation block, a second calculation block and a final calculation block. The first calculation block initializes an intermediate value and an error value depending on a position of a Most Significant Bit of a significant part of the input value. The second calculation block is configured to perform repeatedly, until an exit criterion is fulfilled, the incrementation of a counter value, the determination of a power error value based on the error value and, if the power error value is larger than or equal to an error threshold, adjustment of the intermediate value y by multiplying the intermediate value with an adaptation value and setting the error value to the power error value divided by the base value. If the power error value is smaller than the error threshold, the error value is set to the power error value. The final calculation block is configured to set the output value to the intermediate value.
G06F 7/552 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul de puissances ou racines
G06F 7/556 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul de fonctions logarithmiques ou exponentielles
G06F 1/03 - Générateurs de fonctions numériques travaillant, au moins partiellement, par consultation de tables
79.
Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement
A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/173 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface formés dans, ou sur un substrat commun
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
80.
Method for manufacturing a semiconductor device and semiconductor device
A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
An optical detector (1) on an application specific integrated circuit (ASIC) comprises at least one photodiode (5) for receiving incident light and configured to provide at least one diode signal, a modulator (2) configured to provide an AC drive signal and to provide a reference signal associated with the AC drive signal; and a lock-in amplifier (6) configured to receive said at least one diode signal from said at least one photodiode (5) and to receive the reference signal from the modulator (2), and to determine at least one of a phase and an amplitude of said at least one diode signal using the reference signal.
The present disclosure relates to an optoelectronic device for manipulating electromagnetic radiation. Drawbacks of conventional systems like material constraints, system complexity and tuning speed are overcome by the optoelectronic device (1) comprising a substrate (2) with at least one tuning structure (4) arranged on the substrate (2), wherein the tuning structure (4) comprises an electro-optical material. The tuning structure (4) comprises a first and a second electrical contact (7, 8). A cover layer (10) covers the at least one tuning structure (4). An optical structure (12) is arranged on the cover layer (10). A voltage source (15) is electrically connected to the first and the second electrical contact (7, 8) and provided for generating electric fields within the at least one tuning structure (4).
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02B 26/06 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la phase de la lumière
G02F 1/03 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr
83.
SPECTROMETER, PORTABLE DEVICE AND METHOD FOR DETECTING ELECTROMAGNETIC RADIATION
A spectrometer (10) comprises an emitter (11) that is configured to emit electromagnetic radiation, a sample area (12) that is arranged at an outer face (13) of the spectrometer (10), a modulation unit (14) comprising an electrochromic material, an optical filter (15), an optical detector (16), an integrated circuit (17) that has a main plane of extension, and an optical path for electromagnetic radiation emitted by the emitter (11) towards the optical detector (16) via the sample area (12), the modulation unit (14) and the optical filter (15), wherein the electrochromic material is electrically connected with the integrated circuit (17), and the modulation unit (14) is configured to modulate electromagnetic radiation temporally. Furthermore, a method for detecting electromagnetic radiation is provided.
Modulated light is generated using a light source of a sensor module. Using a photodetector of the sensor module, an intensity of modulated light reflected from an object towards the photo detector is measured over a period of time. An electronic control device bins the measured intensity of the reflected modulated light according to a plurality of temporal bins, determines a first temporal bin having the greatest intensity among the plurality of temporal bins, and estimates a distance between the sensor module and the object based on a first temporal bin, and one or more additional temporal bins of the plurality of temporal bins.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
An apparatus includes a display screen, an ambient light sensor disposed behind the display screen, and an electronic control unit operable to control a brightness of the display screen based on a duty cycle of a PWM signal. The electronic control unit is operable to sample an output of the ambient light sensor, identify a pair of consecutive samples of the ambient light sensor output that represent a greatest difference in magnitudes of their values, and to estimate a brightness of the display screen based on the difference.
An apparatus includes a display screen, an ambient light sensor disposed behind the display screen, and an electronic control unit. An integration time of the ambient light sensor is unsynchronized to a frame rate of the display screen. The electronic control unit is operable to control a brightness of the display screen based on a duty cycle of a PWM blanking signal, wherein at least one OFF time of the PWM blanking signal occurs fully within a first integration period of the ambient light sensor, and wherein at least one other integration period ON time of the PWM blanking signal occurs fully during an ON time of the PWM blanking signal. The electronic control unit is further operable to acquire samples of an output of the ambient light sensor, to identify a highest value and a lowest value from among a consecutive group of the samples, and to estimate a magnitude of an ambient light signal based at least in part on the highest value and the lowest value.
G09G 3/3258 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander la tension aux bornes de l'élément électroluminescent
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
A particulate matter sensor module includes a light source and a light detector mounted on a substrate. A housing is attached to the substrate and includes first and second sections attached to one another in a stack over the substrate such that the first section is disposed between the substrate and the second section. The first and second sections, in combination, define a light reflection chamber, a fluid flow conduit, a particle-light interaction chamber, and a light trap chamber. The first section has a first aperture through which light emitted by the light source can pass to a reflective surface within the light reflection chamber. The reflective surface is configured to reflect the light toward the particle-light interaction chamber where the light can interact with particles in a fluid flowing in the fluid flow conduit. The first section has a second aperture through which light scattered in the particle-light interaction chamber as a result of interaction with one or more of the particles can pass for sensing by the detector. The fluid flow conduit includes a fluid inlet portion having an end coupled directly to the particle-light interaction chamber.
The peak comparator circuitry (1) comprises a differential amplifier circuit (100) having an output node (O100) to generate a differential amplifier output signal (Out1) in response to an amplification of a difference of an input signal (Vin) and a reference signal (Vref1), and a comparator circuit (200) having an output node (O200) to generate a comparator output signal (Out2). A feedback path (FP) of the peak comparator circuitry (1) is arranged between the output node (O200) of the comparator circuit (200) and the output node (O100) of the differential amplifier circuit (100). The proposed peak comparator circuitry (1) allows for a low voltage supply, a low current consumption and a fast output validity.
An optical module (100) for reading a test region of an assay. The optical module comprises: a first light source (101) for illuminating the test region of the assay; an optical detector (103), comprising an optical input for receiving light emitted from the test region and an electrical output; a substrate (104) for mounting the first light source (101) and the optical detector (103); and a housing (105) comprising: a first opening (106) for providing a first optical path from the first light source (101) to the test region (103); wherein the housing (105) and the substrate (104) enclose and positionally align the first source (101) and the optical detector (103) relative to the first opening (106). The housing (105) may comprise one or more legs (108), such as a flexible hook portion which secures the housing (105) to the substrate (104) with a snap-fit engagement, extending from a first and/or second outer surface of the housing (105) in a vertical direction. Beneficially, the snap-fit engagement provided by the flexible hook portion allows the housing to be aligned and secured without the need to use glue or for example a screw and thread that can be difficult to control and/or risks misalignment of the housing.
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
G01N 21/78 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique produisant un changement de couleur
G01N 21/77 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique
90.
AN INTERFERENCE FILTER, OPTICAL DEVICE AND METHOD OF MANUFACTURING AN INTERFERENCE FILTER
An interference filter comprises a substrate, a filter stack and at least one absorption layer. The filter stack comprises alternating layers of optical coatings with different refractive indices arranged on the substrate. The at least one absorption layer is comprised of an optically absorbing material which is arranged on the substrate.
A system includes a first spectral modulator, a second spectral modulator, a light guide optically, a photodetector, and an electronic control device. The first spectral modulator receives sample light, and modulates the sample light according to a first spectral response pattern to produce first modulated light. The second spectral modulator receives the first modulated light from the first spectral modulator via the light guide, modulates the first modulated light according to a second spectral response pattern to produce second modulated light, and transmits the second modulated light to the photodetector. The photodetector measures an intensity of the second modulated light incident on the photodetector, and generates one or more signals corresponding to the intensity of the second modulated light. The electronic control device determines a spectral distribution of the sample light based on the one or more signals.
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (Singapour)
AMS AG (Autriche)
Inventeur(s)
Liu, Zhengtong
Teng, Jinghua
Chu, Hong Son
Wang, Qian
Deng, Jie
Ang, Soo Seng Norman
Tang, Xiao Song Eric
Png, Ching Eng Jason
Fasching, Gernot
Mai, Lijian
Singulani, Anderson
Pulko, Jozef
Abrégé
Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.
A sensor arrangement to sense an external signal comprises a sensor (100) and a charge generator (200) to generate a compensation current (Ic) to compensate the sensor current. A charge generator (200) comprises a first transistor (210) having a parasitic capacitor (212) and a first conductive path. The charge generator (200) comprises a second transistor (220) having a second conductive path being coupled in series to the first transistor (210) and coupled to the output node (O200) of the charge generator (200). The control circuit (600) is configured to control the conductivity of the respective first and second conductive path of the first and the second transistor (210, 220) of the charge generator (200) so that the sensor current is compensated by the compensation current (Ic).
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
94.
Method for manufacturing an etch stop layer and MEMS sensor comprising an etch stop layer
The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.
The present disclosure describes a method and apparatus for enabling an imaging sensor to perform Time-of-Flight measurements while requiring less histogram memory and in many cases less power consumption. A light source is operated to cause multiple light emissions and a coarse/estimated distance is determined based on a first echo received based on the first light emission. A histogram is saved and a fine distance is calculated from the coarse distance and data derived from the echo of a second light emission.
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G01S 7/48 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 17/26 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels les impulsions transmises utilisent une onde porteuse modulée en fréquence ou en phase, p. ex. pour la compression d'impulsion des signaux reçus
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
A particulate matter sensor including a light source, a photodetector, and a particle filter. The light source and the photodetector are arranged in the same plane as the particle filter. Integrated particulate matter sensors are operable to detect particulate matter by measuring an optical characteristic of a filter.
A charge pump circuit arrangement includes a multitude of capacitors of a first and a second group controlled by non-overlapping clock pulses. The capacitors are partly realized in a semiconductor substrate including a deep well doping region and a high voltage doping region surrounded by the deep well doping region. Switches are connected to a pair of capacitors to control the deep well doping regions with signals in phase with the corresponding clock signal.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/94 - Dispositifs à métal-isolant-semi-conducteur, p.ex. MOS
An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.
We disclose herein a method of compressing data for data transfer within an electronic device. The method comprises: receiving, at a first processing member of the electronic device, a plurality of data samples produced by a member of the electronic device, wherein the data samples comprise numerical bits; restructuring, by the first processing member, the plurality of data samples into a plurality of data packets; labelling each data packet with a sample indicator bit to indicate a plurality of groups across the plurality of data packets; transferring a bit stream comprising at least some of the plurality of data packets across an interface of the electronic device to a receiving member of the electronic device; and decoding the bit stream, by a second processing member of the electronic device, to obtain at least some of the plurality of the data samples, the decoding being based at least in part on the sample indicator bits.
A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).
