Abrégé

nn1n1out1dddd). The output voltage of the nthRefRef). The corrected output voltage has improved linearity compared to the reference output voltage.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The present disclosure concerns a correction method for correcting an output voltage signal provided by a magnetic sensor, comprising: providing a sensor, comprising at least a magnetoresistive element, inputting the sensor by a bias voltage in the presence of the external magnetic field vector such that the sensor generates the output voltage signal; and determining a corrected output voltage signal from the output voltage signal, where the corrected output voltage signal has a linearity error smaller than the linearity error of the output voltage signal. The corrected output voltage signal is determined by applying a hyperbolic function or an inverse hyperbolic function or a combination of a hyperbolic function or an inverse hyperbolic function, to a signal proportional to the output voltage signal, or to an additional voltage signal being added or subtracted to the output voltage signal.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

Magnetoresistive element (2) comprising a reference layer (23) having a fixed reference magnetization (230); a ferromagnetic sense layer (21) having a free sense magnetization (210) having a stable vortex configuration that is orientable relative to the fixed reference magnetization (230) in the presence of an external magnetic field (60); and a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21) and contacting a first side (211) of the sense layer (21). The magnetoresistive element (2) further comprises a hard magnetic layer (25) arranged on a second side (212) of the sense layer (21) opposed to the first side (211), the hard magnetic layer (25) being configured to generate an interfacial magnetic coupling between the hard magnetic layer (25) and the sense layer (21) on the second side (212), such as to prevent chirality switching of the sense magnetization (210) after the magnetoresistive element (2) has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

The present disclosure concerns a magnetoresistive element comprising a reference layer (21) having a reference magnetization (210) oriented out-of-plane; a sense layer (23) having a sense magnetization (230) comprising a vortex configuration stable under the presence of an external magnetic field (60) and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field (60) varies in a direction out-of-plane; and a tunnel barrier layer (22) between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer (23) comprises a ferromagnetic material configured such that the sense magnetization is between 300 and1400 emu/cm3 and such that the sense layer (23) has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6x103A/m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

out,1out,2outout,1out,2out,2). The current measurement system enables current sensing in 100s - 1000s A accurately.

Classes IPC  ?

• G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall

Abrégé

A magnetoresistive element (2) comprising a reference layer (23), a ferromagnetic sense layer (21) having a free sense magnetization (210), and a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21). The sense layer (21) comprises a first sense layer portion (211) in contact with the tunnel barrier layer (22) and a second sense layer portion (212) in contact with the first sense layer portion (211). The first sense layer portion (211) is configured such that a magnetic coupling between the first and second sense layer portions (211, 212) is between ±10-4J/m2and ±10-3J/m2; and a perpendicular magnetic anisotropy (PMA) originating from the interface between the first sense layer portion (211) and the tunnel barrier layer (22) is between 8x104A/m and 8x105 A/m, such as to shift positively the TCS of the magnetoresistive element (2) and compensate the negative temperature coefficient of TMR of the magnetoresistive element (2).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

exexex) for any value of the in-plane exposure magnetic field (H).

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
• G11C 29/50 - Test marginal, p. ex. test de vitesse, de tension ou de courant

Abrégé

A magnetic sensor device comprising a plurality of magnetic sensor elements (10); each magnetic sensor element (10) comprising a magnetic tunnel junction (2) including a reference layer (23) having a reference magnetization (230), a sense layer (21) having a sense 5 magnetization (210) and a tunnel barrier layer (22); the sense magnetization (210) comprising a stable vortex configuration in the absence of an external magnetic field, the vortex having a core (211) reversibly movable in a plane (P) of the sense layer (21) according to an external magnetic field (60); the sense layer (21) comprising a peripheral 10 shape (214) in the plane (P), the peripheral shape (214) comprising an asymmetric edge portion (215); the magnetic sensor elements (10) being arranged such that the edge portion (215) of a magnetic sensor element (10) is opposite to the edge portion (215) of the adjacent magnetic sensor element (10).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

A magnetoresistive element (2) comprises a tunnel barrier layer (22) included between a ferromagnetic reference layer (21) having a fixed reference magnetization (210) and a ferromagnetic sense layer (23) having a free sense magnetization (230). The sense magnetization (230) comprises a ferromagnetic material composition and a stable vortex configuration in the absence of an applied magnetic field. The ferromagnetic material composition varies across the thickness of the sense layer (23) from a composition with higher magnetization near the tunnel barrier layer (22) to a composition with lower magnetization away from the tunnel barrier layer (22), such that the sense magnetization (230) and ferromagnetic exchange strength of the sense layer (23) are higher near the tunnel barrier layer (22) than away from the tunnel barrier layer (22).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

The present disclosure concerns a correction method for correcting an output signal provided by a magnetoresistive sensor in the presence of an external magnetic field, comprising: determining a deviation of the output signal from a linear response by an amplitude of a high order component signal of the output voltage; and determining a corrected output signal by compensating the output signal for the high order component signal such that the corrected output signal varies linearly with a variation of the external magnetic field within a variation range. The present disclosure further concerns an integrated circuit (IC) configured to perform the method and a characterization method to derive common parameters used when performing the correction method, for a plurality of magnetoresistive sensors.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

Magnetoresistive element (2) comprising a reference layer (21) having a fixed reference magnetization (210), a sense layer (23) having a free sense magnetization (230) and a tunnel barrier layer (22) between the reference layer (21) and the sense layer (23); the magnetoresistive element (2) being configured to measure an external magnetic field (60) oriented substantially perpendicular to the plane of the layers (21, 23). The reference magnetization (210) being oriented substantially perpendicular to the plane of the reference layer (21). The sense magnetization (230) comprising a vortex configuration in the absence of an external magnetic field (60), the vortex configuration being substantially parallel to the plane of the sense layer (23) and having a vortex core (231) magnetization along an out-of-plane axis (50) substantially perpendicular to the plane of the sense layer (23).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques

Abrégé

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

SFM1SFM2FM1FM2FM2 are the thicknesses of the first and second sense sublayers (231, 232); and wherein the sense magnetic ratio is between 0.1 and 0.25.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

The present disclosure concerns a magnetic sensor (10) comprising a plurality of magnetoresistive elements (1); each magnetoresistive element comprising a ferromagnetic layer (21) having a magnetization (210) that is orientable at or above a threshold temperature; the magnetic sensor further comprises a plasmonic structure (5) destined to be irradiated by electromagnetic radiation (70) and comprising a spatially periodic plasmonic array (50) of metallic structures (51). The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation (70). The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system comprising the sensor and an emitting device (7) configured to emit electromagnetic radiation.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G11B 5/31 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction utilisant des films minces
• G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs

Abrégé

Magnetic angular sensor element (20) destined to sense an external magnetic field (60), comprising a magnetic tunnel junction (2) containing a ferromagnetic pinned layer (21) having a pinned magnetization (210), a ferromagnetic sensing layer (23), and a tunnel magnetoresistance barrier layer (22); the ferromagnetic sensing layer (23) comprising a first sensing layer (23a) being in direct contact with the barrier layer (22) and having a first sensing magnetization (230a), a second sensing layer (23b) having a second sense magnetization (230b), and a metallic spacer (24) between the first sensing layer (23a) and the second sensing layer (23b); wherein the metallic spacer (24) is configured to provide an antiferromagnetic coupling between the first sensing magnetization (230a)and the second sensing magnetization (230b) such that the first sensing magnetization (230a) is oriented substantially antiparallel to the second sensing magnetization (230b); the second sensing magnetization (230b)being larger than the first sensing magnetization (230a), such that the second sensing magnetization (230b) is oriented in accordance with the direction of the external magnetic field (60).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

A magnetoresistive element (2) for a two-dimensional magnetic field sensor, comprising: a ferromagnetic reference layer (21) having a fixed reference magnetization (210), a ferromagnetic sense layer (23) having a sense magnetization (230) that can be freely oriented relative to the reference magnetization (210) in the presence of an external magnetic 5field, and a tunnel barrier layer (22) between the reference and sense ferromagnetic layers (21, 23); the reference layer (21) comprising a reference coupling layer (213) between a reference pinned layer (211) and a reference coupled layer (212); the reference coupled layer (212) comprising a first coupled sublayer (214) in contact with the reference 10coupling layer (213), a second coupled sublayer (215), a third coupled sublayer (217) and an insert layer (216) between the second and third coupled sublayers (215, 217); the insert layer (216) comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer (212) is between about 1 nm and 15about 5 nm.

Classes IPC  ?

• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 43/10 - Emploi de matériaux spécifiés

Abrégé

Disclosed is a MTJ sensing circuit for measuring an external magnetic field and comprising a plurality of MTJ sensor elements connected in a bridge configuration, the MTJ sensing circuit having an input for inputting a bias voltage and generating an output voltage proportional to the external magnetic field multiplied by the bias voltage and a gain sensitivity of the MTJ sensing circuit, wherein the gain sensitivity and the output voltage vary with temperature; the MTJ sensing circuit further comprising a temperature compensation circuit configured to provide a modulated bias voltage that varies as a function of temperature over a temperature range, such that the output voltage is substantially constant as a function of temperature. Also disclosed is a method for compensating the output voltage for temperature.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, comprising: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd + θ); and an angle extracting unit for measuring the phase shift between the summed signal and a synchronization signal and determining the angle from the phase shift.

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
• G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension

Abrégé

The present disclosure concerns a magnetoresistive sensor element (2) comprising: a reference layer (23) having a pinned reference magnetization (230); a sense layer (21) having a free sense magnetization (210) comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field (60) to be measured; a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21); wherein the sense layer (21) comprises a first ferromagnetic sense portion (211) in contact with the tunnel barrier layer (22) and a second ferromagnetic sense portion (212) in contact with the first ferromagnetic sense portion (211); the second ferromagnetic sense portion (212) comprising a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility (x) of the sense layer (21) substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. The present disclosure concerns a method for manufacturing the magnetoresistive sensor element.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

outoutout) between the TMR sensor elements (21, 22) of the first half-bridge and the TMR sensor elements (23, 24) of the second half-bridge is measurable when the field current (41) is passed in the field line (4); the differential voltage output being insensitive to the presence of an external uniform magnetic field.

Classes IPC  ?

• G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

Magnetic field sensor for sensing a two-dimensional external magnetic field, comprising a magnetic tunnel junction (2) comprising a reference layer (23) having a fixed reference magnetization (230), a sense ferromagnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference ferromagnetic layers (21, 23); the sense ferromagnetic layer (21) comprising a first sense ferromagnetic layer (211) in contact with the tunnel barrier layer (22), a second sense ferromagnetic layer (212), and a first non-magnetic layer (213) between said first and second sense ferromagnetic layers (211, 212); said second sense ferromagnetic layer (212) comprises a plurality of multilayer element (216), each multilayer element (216) including a second non- magnetic layer (215) between two second ferromagnetic sense layers (214); and wherein said second sense ferromagnetic layer (212) has a thickness equal or less than 12 nm.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques

Abrégé

xxx) opposed to the first field direction, the vortex core (211) moves along a10second path (212) and the first magnetization (210) rotates around the vortex core (211) in a clockwise direction. Both the first and second field path (212, 213) are substantially identical and move the vortex core (211) away from the indentation (50).

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

An electronic circuit for measuring an angle and an intensity of an external magnetic field (60), comprising: a first and second magnetic field sensing unit (300, 400) having sensing axis substantially orthogonal to each other; a voltage generator (200) supplying a synchronization signal (101), a first voltage waveform (201) to the first magnetic field sensing unit (300) and a second voltage waveform (202) to the second magnetic field sensing unit (400); a signal conditioning unit (500, 600) configured for adding up the first (301) to the second sensing output signal (401) outputting a conditioned signal (601); wherein the first and second voltage waveforms (201, 202) have substantially the same amplitude and the same frequency and are phase shifted by about 90° with respect to each other; and wherein the conditioned signal (601) and the synchronization signal (101) are inputted into a magnetic field angle detection unit (700) configured for measuring a phase shift between the conditioned signal (601) and the synchronization signal (101) and for determining the angle of the external magnetic field from the measured phase shift. The electronic circuit is also for measuring an intensity of the external magnetic field and each of the first and second magnetic field sensing units comprises a magnetic tunnel junction and is configured such that an amplitude of the first and second sensing output signals varies linearly with a variation of the intensity of the external magnetic field, the electronic circuit further comprising a magnetic field intensity detection unit configured to determine the intensity of the external magnetic field by sampling the amplitude of the summed signal (501) at its maximum to obtain a corresponding sampled magnetic field intensity output (801), the occurrence of the maximum being detected based on the conditioned signal (601) being a digital phase comparator signal of the summed signal (501).

Classes IPC  ?

• G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques

Abrégé

Magnetic angular sensor device destined to sense an external magnetic field (60), the sensor device comprising a plurality of magnetic sensor elements (20), each sensor element (20) comprising a magnetic tunnel junction (2) containing a ferromagnetic reference layer (23) having a reference magnetization (230) that is pinned in a pinning direction (231), a ferromagnetic sense layer (21) having a sense magnetization (210) that can be oriented in an external magnetic field (60), and a tunnel barrier spacer layer (22), between the reference layer (23) and the sense layer (21); wherein the sense layer (21) of at least a portion of said plurality of sensor elements (20) comprises an in-plane uniaxial sense magnetic anisotropy having an easy axis (211) that is aligned substantially parallel to the pinning direction (231), such that an angular deviation in the alignment of the direction of the sense magnetization (210) in the external magnetic field (60) is minimized for a range of external magnetic field (60).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

outnnn is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The present disclosure concerns a reader device (10) for reading information stored on a magnetic strip containing a plurality of polarized magnets, each providing a magnetic flux, said reader device (10) comprising: a magnetoresistive sensor (20) including a plurality of magnetoresistive elements (21) and configured for reading the information stored on the magnetic strip and outputting a read signal (22); a processing module (12) configured for decoding the read signal (22) and extracting binary data (30); wherein the read signal (22) comprises amplitude information of the magnetic flux; and wherein the processing module (12) is further configured for decoding the read signal (22) using the amplitude information of the read signal (22). The present disclosure further concerns an amplitude decoding method for decoding the read signal (22) outputted by the reader device (10).

Classes IPC  ?

• G06K 7/08 - Méthodes ou dispositions pour la lecture de supports d'enregistrement avec des moyens de perception des modifications d'un champ électrostatique ou magnétique, p. ex. par perception des modifications de la capacité entre des électrodes

Abrégé

The present disclosure concerns a MLU-based magnetic device (100) comprising a plurality of MLU-based magnetic cell (10), each MLU cell (10) comprising a first ferromagnetic layer (21) having a first magnetization (210), a second ferromagnetic layer (23) having a second magnetization (230), and a spacing layer (22) between the first and second ferromagnetic layers (21, 23); an input device (4) configured for generating an input signal(44) adapted for changing the orientation of the first magnetization (210)relative to the second magnetization (230) and vary a resistance (R) of the MLU device (100); a bit line (3) configured for passing a sense signal (31) adapted for measuring said resistance (R); and a processing unit (51) configured for computing an electrical variation from the sense signal (31) and outputting an electrical variation signature (50). The present disclosure further pertains to an authentication method for reading the MLU device.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 7/24 - Circuits de protection ou de sécurité pour cellules de mémoire, p. ex. dispositions pour empêcher la lecture ou l'écriture par inadvertanceCellules d'étatCellules de test
• G06F 21/73 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information par création ou détermination de l’identification de la machine, p. ex. numéros de série
• G06F 21/79 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données dans les supports de stockage à semi-conducteurs, p. ex. les mémoires adressables directement
• H04L 9/08 - Répartition de clés
• G11C 29/44 - Indication ou identification d'erreurs, p. ex. pour la réparation

Abrégé

The present disclose concerns an apparatus (5) for generating a magnetic field (60) comprising a plurality of permanent magnets (51, 52) arranged in a plane, each magnet (51, 52) being spatially separated along the plane from the adjacent magnet by a predetermined spacing (D), each magnet (51, 52) having a magnetic polarity opposed to the one of the adjacent magnet such that a magnetic field (60) of adjacent magnets (51, 52) is oriented substantially perpendicular to the plane and in opposite directions, each magnet (51, 52) being spatially separated in the plane from the adjacent magnet by a nonmagnetic material. The present disclosure also pertains to a method for programming a magnetic device or sensor device using the apparatus.

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• H03K 19/18 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs galvanomagnétiques, p. ex. des dispositifs à effet Hall
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

The present disclosure concerns a magnetic sensor cell (1) comprising a magnetic tunnel junction (2) comprising a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); the sense layer (21) comprising an intrinsic anisotropy being substantially perpendicular to the plane of the sense layer (21) such that the sense magnetization (210) is orientable between an initial direction perpendicular to the plane of the sense layer (21) and a direction parallel to the plane of the sense layer (21); the intrinsic anisotropy having in anisotropy field being above 150 Oe.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

A magnetoresistive-based signal shaping circuit (100) for audio applications comprising: a field emitting device (4) configured for receiving an input current signal (41) from an audio signal source and for generating a magnetic field (42) in accordance with the input current signal (41), a first magnetoresistive element (10) having a first electrical resistance (Rb1) and electrically connected in series to a second magnetoresistive element (11) having a second electrical resistance (Rb2); the magnetoresistive-based signal shaping device (100) providing an output signal (Vout) across the second magnetoresistive element (11) when an input voltage (Vdd) is applied across the first and second magnetoresistive element (10, 11) in series; the output signal (Vout) being a function of the electrical resistance (Rb1, Rb2) and yielding a dynamic range compression effect; the first and second electrical resistance (Rb1, Rb2) varying with the magnetic field (42) in an opposite fashion.

Classes IPC  ?

• H03G 9/02 - Combinaisons de plusieurs types de commande, p. ex. commande de gain et commande de tonalité dans des amplificateurs non accordés
• H03G 7/00 - Compression ou expansion de volume dans les amplificateurs
• H01L 43/08 - Résistances commandées par un champ magnétique
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
• H04L 12/26 - Dispositions de surveillance; Dispositions de test

Abrégé

The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contact with the storage and sense layer (21, 23); wherein the magnetoresistive element (1) further comprises a compensating ferromagnetic layer (25) having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer (21) and/or sense layer (23) is adjustable between -10 ppm et +10 ppm or more negative than -10 ppm by adjusting a thickness of the compensating ferromagnetic layer (25). The present disclosure concerns also concerns a magnetic device comprising the magnetoresistive element.

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• H01F 10/26 - Pellicules magnétiques minces, p. ex. de structure à un domaine caractérisées par le substrat ou par les couches intermédiaires
• H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

A magnetic memory device (100) comprising a plurality of magnetic units (1), each unit including a first and second magnetic tunnel junctions (2, 2') electrically connecting in series by a current line (3) and a strap (7), the two junctions (2, 2') comprising a first and second storage layer (23, 23') having a first and second storage magnetization (230, 230') respectively and a first and second sense magnetic layer (21, 21') having a first and second senses magnetization (210, 210') respectively; a field line (4) configured to provide an input signal (41) generating a first and second magnetic field (42, 42') for varying the first and second sense magnetization (210, 210'); each magnetic unit (1) being provided with a data state such that the first and second storage magnetizations (230, 230') are aligned in opposed directions; the first and second magnetic field (42, 42') being adapted for varying respectively the first and second sense magnetization (210, 210') in a first and second direction opposed to the first direction.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

A magnetic device (100) configured to perform an analog adder circuit function and comprising a plurality of magnetic units, each including n magnetic tunnel junction (2, 2', 2", 2"',...) electrically connected in series via a current line (3), each magnetic tunnel junction comprising a storage magnetic layer (23) having a storage magnetization (230), a sense magnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22); n input lines (4, 4', 4", 4"',...), each being configured to generate a magnetic field (42, 42', 42", 42'",...) adapted for varying a direction of the sense magnetization (210) and a resistances (R1, R2) of a corresponding one of the n magnetic tunnel junctions, based on a corresponding input (41, 41', 41 ", 41 "',...) wherein the junction resistance of said corresponding one of said n magnetic tunnel junctions varies linearly based on said corresponding input; wherein each of the n magnetic units is configured to add said n inputs (41, 41', 41 ", 41'",...) to generate an output signal (Vout) that varies in response to the n resistances (R1, R2, R3, R4,...); the n input lines being configured to conduct n independent signals so that the output signal can vary as a function of the n independent input signals.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H03F 15/00 - Amplificateurs utilisant des effets galvanomagnétiques ne comportant pas de mouvement mécanique, p. ex. utilisant l'effet Hall

Abrégé

A logic gate module (10) for performing logic functions comprising a MRAM cell (1) including a magnetic tunnel junction (2) comprising a sense layer (21), a storage layer (23), and a spacer layer (22), the MRAM cell (1) having a junction resistance (RMTJ) determined by the degree of alignment between a sense magnetization (210) of the sense layer and the storage magnetization (230) of the storage layer; wherein, the storage magnetization (230) and the sense magnetization (210) are switchable between m directions to store data corresponding to one of m logic states, with m ≥ 4, such that the MRAM cell (1) is usable as a n-bit cell with n ≥ 2; and wherein logic gate module (10) further comprises a comparator (11) for comparing the junction resistance (RMTJ) with a reference value (Rref) and outputting a digital signal indicating a difference between the junction resistance (RMTJ) anci the reference value (Rref). The reference value (Rref ) is selectable to have: a value substantially equal to a maximum value (Rmax) corresponding to the sense and storage magnetizations (210, 220) being antiparallel, such that the logic gate module (10) is configured to perform "OR", NAND","A+notB" or "notA+B" logic functions; a value substantially equal to a minimum value (Rmjn ) corresponding to the sense and storage magnetizations (210, 220) being parallel, such that the logic gate module (10) is configured to perform t"NOR" or "NAND", "A+notB" or "notA+B" logic functions; and a value substantially equal to an intermediate value (Rmin ) corresponding to a value between the maximum value (Rmax) and the minimum value (Rmin),such that the logic gate module (10) is configured to perform"XOR" logic function.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence
• H03K 19/168 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs magnétiques saturables utilisant des dispositifs à pellicule mince
• H03K 19/20 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion caractérisés par la fonction logique, p. ex. circuits ET, OU, NI, NON

Abrégé

The invention concerns a programmable magnetic device (1) for generating random numbers during a programming operation, comprising an array (10) of a plurality of magnetic tunnel junctions (2), each magnetic tunnel junction (2) comprising a reference layer (21) having a reference magnetization (210); a tunnel barrier layer (22); and a storage layer (23) having a storage magnetization (230); the programmable magnetic device (1) being arranged such that, during the programming operation, the storage magnetization (230) is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

Classes IPC  ?

• G06F 7/58 - Générateurs de nombres aléatoires ou pseudo-aléatoires

Abrégé

A magnetic logic unit (MLU) cell (1) for sensing magnetic fields, comprising: a magnetic tunnel junction (2) including a storage layer (23) having a storage magnetization (230, 234, 235), a sense layer (21) having a sense magnetization; a tunnel barrier layer (22) between the storage layer (23) and the sense layer (21); and a pinning layer (24) pinning the storage magnetization (230, 234, 235) at a low threshold temperature and freeing it at a high threshold temperature (TH); the sense magnetization (210) being freely alignable at the low and high threshold temperatures; the storage layer (23) inducing an exchange bias field (60) magnetically coupling the sense layer (21) such that the sense magnetization (210) tends to be aligned antiparallel or parallel to the storage magnetization (230, 234, 235); the tunnel barrier layer (22) being configured for generating an indirect exchange coupling (70) between the tunnel barrier layer (22) and the sense layer (21) providing an additional exchange bias field (71).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) freely orientable in the external magnetic field; a storage layer (23) having a storage magnetization (230); and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); the magnetic sensor device (100) further comprising a stress inducing device (6) configured for applying an anisotropic mechanical stress on the magnetic tunnel junction (2) such as to induce a stress-induced magnetic anisotropy (271, 272) on at least one of the sense layer (21) and the storage layer (23); and the stress-induced magnetic anisotropy (271, 272) induced by the stress inducing device corresponding substantially to a net magnetic anisotropy (280) of said at least one of the sense layer (21) and the storage layer (23). The magnetic sensor device can be programmed easily and has improved sensitivity.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
• B82Y 40/00 - Fabrication ou traitement des nanostructures
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01F 41/30 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats pour appliquer des structures nanométriques, p. ex. en utilisant l'épitaxie par jets moléculaires [MBE]
• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues

Abrégé

The present disclosure concerns a MLU cell (1) for sensing an external magnetic field, comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) adapted to be oriented by the external magnetic field; a reference layer (23) having a reference magnetization (230);a tunnel barrier layer (22); a biasing layer (27) having a biasing magnetization (270) and a biasing antiferromagnetic layer (26) pinning the biasing magnetization (270) substantially parallel to the pinned reference magnetization (230)at a low threshold temperature (TL) and freeing it at a high threshold temperature (TH); a biasing coupling layer (28) between the sense layer (21) and the basing layer (27) and configured for magnetically coupling the biasing layer (27) and the sense layer (21) such that the sense magnetization (210) is oriented substantially perpendicular to the pinned biasing magnetization (270) and to the pinned reference magnetization (230). The present disclosure further concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of the MLU cells (1).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

Method for programming a magnetic device (100) comprising a plurality of magnetic logical unit (MLU) cells (1) using a single programming current, each MLU cell (1) includes a storage magnetic layer (23) having a storage magnetization (231) that is pinned at a low threshold temperature (TL) and freely orientable at a high threshold temperature (TH); and a programming line (4) physically separated from each of said plurality of MLU cells (1) and configured for passing a programming current pulse (41) for programming any one of said plurality of MLU cells (1); the method comprising: passing the programming current (41) in the field line (4) for heating the magnetic tunnel junction (2) of each of said plurality of MLU cells (1) at the high threshold temperature (TH) such as to unpin the second magnetization (231); wherein the programming current (41) is further adapted for generating a programming magnetic field (42) adapted for switching the storage magnetization (231) of each of said plurality of MLU cells (1) in a programmed direction.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H03K 19/18 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs galvanomagnétiques, p. ex. des dispositifs à effet Hall

Abrégé

The present disclosure concerns a self-referenced MRAM cell (1) comprising a reference layer(23) having a fixed reference magnetization (230), a sense layer (21) having a free sense magnetization (210),a tunnel barrier (22), a biasing layer (25) having bias magnetization (250) and a biasing antiferromagnetic layer (27) pinning the bias magnetization (250) in a bias direction when MRAM cell (1) is at temperature equal or below a bias threshold temperature (TB); the bias magnetization (250) being arranged for inducing a bias field (251) adapted for biasing the sense magnetization (210) in a direction opposed to the bias direction, such that the biased sense magnetization (210) varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization (230). The present disclosure further concerns a magnetic field sensor (100) comprising a plurality of the self-referenced MRAM cell (1) and a method for programming the magnetic field sensor.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

Electrical interconnecting device (10) comprising: a magnetic tunnel junction (2); a strap portion (7) electrically connecting a lower end of the magnetic tunnel junction (2); a current line portion (3') electrically connecting an upper end of the magnetic tunnel junction (2); an upper metallic stud (8) electrically connecting a lower metallic stud (5) through a via (6); the strap portion (7) being in direct electrical contact with the via (6), such that a current passing in the magnetic tunnel junction (2) flows directly between the strap portion (') and the via (6) and between the via (6) and the lower metallic stud (5) or the upper metallic stud (8).

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
• H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues

Abrégé

The present disclosure concerns an MLU-based accelerometer comprising: at least one MLU cell comprising a tunnel barrier layer between a first magnetic layer having a fixed first magnetization direction and a second magnetic layer having a second magnetization direction that can be varied; a proof-mass comprising a ferromagnetic material having a proof-mass magnetization inducing a proof-mass field, the proof-mass being elastically suspended such as to be able of being deflected in at least one direction when subjected to an acceleration vector, the proof-mass being magnetically coupled to said at least one MLU cell via the proof-mass field; and a read module configured for determining a magnetoresistance of each of said at least one MLU cell such as to determine an acceleration vector from the deflection of the proof-mass relative to any one of said at least one MLU cell.

Classes IPC  ?

• G01P 15/08 - Mesure de l'accélérationMesure de la décélérationMesure des chocs, c.-à-d. d'une variation brusque de l'accélération en ayant recours aux forces d'inertie avec conversion en valeurs électriques ou magnétiques
• G01P 15/18 - Mesure de l'accélérationMesure de la décélérationMesure des chocs, c.-à-d. d'une variation brusque de l'accélération dans plusieurs dimensions
• G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

The present disclosure concerns a multibit MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a freely orientable sense magnetization (211); a tunnel barrier layer (22), a synthetic antiferromagnet storage layer (23) having a first and second storage layer (231, 232); wherein the sense magnetization (211) induces a dipolar field (212) having a magnitude above a spin-flop field (HSF) of the storage layer (23); the MRAM cell (1) further comprising aligning means for aligning the sense magnetization (211) in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell (1). The present disclosure also concerns a method for operating the multibit MRAM cell (1).

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence

Abrégé

The present disclosure concerns a multi-bit magnetic randomaccess memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including: a first magnetic storage layer (231), a second magnetic storage layer (233), a magnetic sense layer (211), a first spacer layer (221) between the first magnetic storage layer (231) and the magnetic sense layer (211), and a second spacer layer (222) between the second magnetic storage layer (233) and the sense layer (211); the first and second storage magnetization (232, 234) being switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for a method for writing and reading to the MRAM cell andto memorydevices including multi-bit MRAM cells.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence
• G11C 11/15 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments à pellicules minces utilisant des couches magnétiques multiples

Abrégé

The present disclosure concerns a method for writing a MRAM device, comprising magnetic tunnel junction (2) with a storage layer (23), a sense layer (21), and a spacer layer (22) between the storage and sense layers (23, 21); at least one of the storage and sense layers(23, 21) having a magnetic anisotropy axis (200); the method comprising an initialization step including: applying an initial heating current pulse(31') for heating the magnetic tunnel junction (2) to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field (60') for adjusting the storage magnetization (230)in an initial direction oriented along the magnetic anisotropy axis (200). The method allows performing the writing step with improved reproducibly.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence

Abrégé

Method for sensing an external magnetic field (45) using a magnetic sensor cell (1) comprising: a magnetic tunnel junction (2) including a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); and a field line (4) configured for passing a field current (41 ) for providing a sense magnetic field (42) adapted for aligning the sense magnetization (210); the sense layer magnetization (210) being orientable between a direction parallel to the plane of the sense layer (21) and a direction perpendicular to the plane of the sense layer (21) when the sense magnetic field (42) is provided; the external magnetic field (45) comprising an in-plane component (451) oriented parallel to the plane of the sense layer (21) and an out-of-plane component (452) perpendicular to the plane of the sense layer (21); the method comprising: sensing the out-of-plane component (452); and sensing the in-plane component (451).

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

A magnetic sensor cell (1) comprises a magnetic tunnel junction (2) comprising a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); and a magnetic device (4) configured for providing a sense magnetic field (42) adapted for aligning the sense magnetization (210). The sense layer magnetization (210) is orientable between a direction parallel to the plane of the sense layer (21) and a direction perpendicular to the plane of the sense layer (21) when the sense magnetic field (42) is provided. The magnetic sensor cell can be used for sensing an external magnetic field comprising a component (451) oriented parallel to the plane of the sense layer and a component (452) oriented perpendicular to the plane of the sense layer.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs

Abrégé

A self-referenced MRAM cell (1) comprises a first portion (2') of a magnetic tunnel junction (2) including a storage layer (23); a second portion (2") of the magnetic tunnel junction portion (2) including a tunnel barrier layer (22), a sense layer (21) and a seed layer (25); the seed layer (25) comprising a material having high spin-orbit coupling such that passing a sense current (32) along the plane of the sense layer (21) and/or seed layer (25) exerts a spin-orbit torque adapted for switching a sense magnetization (210) of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique

Abrégé

MRAM cell (1) comprising a magnetic tunnel junction (2) includinga reference layer (21), a storage layer(23) having a storage magnetization (230), a tunnel barrier layer (22) comprised between the reference and the storage layers (21, 23); andan antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230) at a low temperature threshold and free it at a high temperature threshold; the storage layer (23)comprising a first ferromagnetic layer (231) in contact with the tunnel barrier layer (22), a second ferromagnetic layer (234) in contact with theantiferromagnetic layer (24), and a lowsaturation magnetization storage layer (235) comprisinga ferromagnetic materialand a non-magneticmaterial. The MRAM cell can be written with improved reliability.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

Self-referenced magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21); a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) exchange-coupling the storage layer (23) such that the storage magnetization (230) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) comprising a first sense layer (211) having a first sense magnetization (213), a second sense layer (212) having a second sense magnetization (214) and spacer layer (215) between the first and second sense layers (211, 212). The MRAM cell can be read with low power consumption.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

MRAM element (1) having a magnetic tunnel junction (2) comprising a reference layer (21), a storage layer (23), a tunnel barrier layer (22) between the reference and storage layers (21, 23), and a storage antiferromagnetic layer (24); the storage antiferromagnetic layer (24) having a first function of exchange-coupling a storage magnetization (230) of the storage layer (23) and having a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction (2). The storage antiferromagnetic layer (24) further comprises at least one metallic element such as to vary the electrical resistivity of the storage antiferromagnetic layer, said at least one metallic element comprising one or a plurality of metallic layers embedded in the storage antiferromagnetic layer. The disclosed MRAM element has better data retention and low writing temperature.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21),a storage layer (23, 231),a tunnel barrier layer (22) and an antiferromagnetic layer (24) exchange-coupling the storage layer (23, 231) such that the storage magnetization (234) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) being arranged such that the sense magnetization (210) can be switched from a first stable direction to another stable direction opposed to the first direction; the switched sense magnetization (210) generating generating a sense stray field (60) being large enough for switching the storage magnetization (234) according to the switched sense magnetization (210), when the magnetic tunnel junction (2) is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
• H01F 41/30 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats pour appliquer des structures nanométriques, p. ex. en utilisant l'épitaxie par jets moléculaires [MBE]

Abrégé

A magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) containing: a storage layer (23) comprising at least one storage ferromagnetic layer (231, 232), each of said at least one storage ferromagnetic layer having a storage magnetization (234, 235);an antiferromagnetic storage layer (24) pinning the storage magnetization (234, 235) at a low threshold temperature and freeing them at a high temperature threshold;a reference layer (21); and a tunnel barrier layer (22) between the reference layer (21) and the storage layer (23);the magnetic tunnel junction (2) further comprising a free ferromagnetic layer (60) having a free magnetization (601) adapted to induce a magnetic stray field (55) magnetically coupling the free ferromagnetic layer (60) with the storage layer (23); such that said storage magnetization (234, 235) can be switched by the magnetic stray field (55) when the magnetic tunnel junction (2) is at the high temperature threshold. The disclosed MRAM cell has low power consumption.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

Magnetic element (1 ) comprising a first magnetic layer (21) having a first magnetization (210); a second magnetic layer (23) having a second magnetization (230); a tunnel barrier layer (22) comprised between the first and the second magnetic layers (21, 23); and an antiferromagnetic layer (24) exchanged coupling the second magnetic layer (23) such that the second magnetization (230) is pinned below a critical temperature of the antiferromagnetic layer (24), and can be freely varied when the antiferromagnetic layer (24) is heated above that critical temperature; the magnetic element (1 ) further comprising an oxygen gettering layer (25) between the second magnetic layer (23) and the antiferromagnetic layer (24), or within the second magnetic layer (23). The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique

Abrégé

Self-reference-based MRAM element (1) comprising: a first magnetic tunnel junctions (2) and a second magnetic tunnel junctions(2'), each having a magnetoresistance that can be varied; and a field line (5) for passing a field current (51) destined to vary the magnetoresistance of the first and second magnetic tunnel junctions (2); the field line (5) comprising a first branch (5') and a second branch (5'') both branch (5', 5'') comprises a cladding (6); the first branch (5') being arranged for passing a first portion (51') of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction (2), and the second branch (5'') being electrically connected in parallel with the first branch (5') and arranged for passing a second portion (51'') of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction (2'). The present disclosure also concerns a MRAM device comprising a plurality of the MRAM elements. The self-referenced MRAM element and MRAM device can use a reduced field current.

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a reference magnetic layer (21) having a reference magnetization (210), a tunnel barrier layer (22), and a SAF storage magnetic layer (23) including a first and second storage magnetization (233, 234) being coupled antiparallel through a storage coupling layer (232) and freely orientable at a high temperature threshold; the method comprising: heating the magnetic tunnel junction (2) to the high temperature threshold; and applying a write magnetic field (42) to orient the first and second storage magnetization (233, 234); wherein said high temperature threshold comprises one of a first or third high temperature threshold (T1, T3) such as to orient the first storage magnetization (233) respectively antiparallel or parallel to the second storage magnetization (234); or a second high temperature threshold (T2) such as to orient the first storage magnetization (233) with an angle below 180° with respect to the second storage magnetization (234).

Classes IPC  ?

• G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p. ex. de tension, de courant, de phase, de fréquence
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

The present disclosure concerns a magnetic logic unit (MLU) cell comprising: a first magnetic tunnel junction (2) and a second magnetic tunnel junction (2), each magnetic tunnel junction comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization, and a tunnel barrier layer (22) between the first and second layer (21, 23); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to switch the first magnetization (210); the first magnetic layer (21) being arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field (42). The present disclosure also concerns an MLU amplifier (10) comprising a plurality of the MLU cell (1). The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

Classes IPC  ?

• H03F 13/00 - Amplificateurs utilisant un élément amplificateur consistant en deux transducteurs couplés mécaniquement ou acoustiquement, p. ex. amplificateur téléphone-microphone
• G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants

Abrégé

The present disclosure concerns magnetic logic unit (MLU) cell (1) comprising a first and second magnetic tunnel junction (2), each comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization (230), and a barrier layer (22); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to adjust the first magnetization (210); the first and second magnetic layers (21, 23) and the barrier layer (22) being arranged such that the first magnetization (210) is magnetically coupled antiparallel with the second magnetization (230) through the barrier layer (22); the MLU cell (1) further comprising a biasing device (50) arranged for applying a static biasing magnetic field (53) oriented substantially parallel to the external magnetic field (42) such as to orient the first magnetization (210) at about 90° relative to the second magnetization (230), the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field (42).

Classes IPC  ?

• H03F 15/00 - Amplificateurs utilisant des effets galvanomagnétiques ne comportant pas de mouvement mécanique, p. ex. utilisant l'effet Hall
• G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

Method for writing to a MRAM cell (1) comprising a magnetic tunnel junction (2) including a first and second ferromagnetic layer (21, 23), and a tunnel barrier layer (22); and a bipolar transistor (8) in electrical connection with one end of the magnetic tunnel junction (2), the bipolar transistor (8) being arranged for controlling the passing and polarity of a heating current (31) in the magnetic tunnel junction (2); the method comprising a sequence of writing steps, each writing step comprising passing the heating current (31) in the magnetic tunnel junction (2) such as to heat it to a high temperature threshold; and once the magnetic tunnel junction (2) has reached the high temperature threshold, adjusting a second magnetization (230) of the second ferromagnetic layer (23) for writing a write data; wherein during one of the writing steps, the polarity of the heating current (31) is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

The present disclosure concerns a thermally assisted switching MRAM element (1) comprising a magnetic tunnel junction (2) including a reference layer (21) having a reference magnetization (210); a storage layer (23) having a storage magnetization (230, 234, 235); a tunnel barrier layer (22) included between the storage layer (23) and the reference layer (21); and a storage antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230, 234, 235) at a low temperature threshold and to free it at a high temperature threshold; the antiferromagnetic layer (24) comprising: at least one first antiferromagnetic layer (241) having a first storage blocking temperature (Tbs1), and at least one second antiferromagnetic layer (242) having a second storage blocking temperature (Tbs2); wherein the first storage blocking temperature (TbSi) is below 200°C and the second storage blocking temperature (Tbs2) is above 250°C. The MRAM element disclosed herein combines better data retention compared with known MRAM elements with low writing mode operating temperature.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

A memory unit with one field line (5); at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells (100), each cell (100) comprising a magnetic tunnel junction (2) having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor (3) is connected to the magnetic tunnel junction (2); the one field line (5) is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions (2) of the cells (100). A magnetic memory device can be formed by assembling an array of the memory units wherein at least two adjacent magnetic tunnel junctions (2) of the cells (100) can be addressed simultaneously by the field line (5). The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.

Classes IPC  ?

• H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
• G11C 11/15 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments à pellicules minces utilisant des couches magnétiques multiples

Abrégé

The invention relates to a magnetic member with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, each including: a reference magnetic layer (43) having a fixed direction magnetisation; a storage magnetic layer (40) exchange-trapped with an anti-ferromagnetic layer (41), wherein the magnetisation direction of the storage layer (40) can vary when said member can be heated to a temperature at least higher than the blocking temperature of the anti-ferromagnetic layer (41); an insulation or semiconducting layer (42) or a layer having a confined current path, provided between the reference layer and the storage layer; characterised in that the magnetic member (31) also includes at least one electrically-resistive thin layer (48) for heating the magnetic member.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

The present invention concerns a magnetic memory of MRAM type with a thermally-assisted writing procedure in which every memory cell (1) comprises a magnetic tunnel junction (2) comprising a magnetic storage layer (21) in which the data will be written; a reference layer (23), the magnetization of which is always substantially in the same direction at any time of operation; and an insulating layer (22) inserted between the reference layer (23) and the storage layer (21); characterized by a writing layer (8) added on top of the storage layer (21). The writing process is performed by combining the heating of the junction (2) using a junction current pulse (31) with a magnetostatic field generated by the net magnetization of the writing layer (8) in order to reverse the magnetization of the storage layer (21).

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non- volatility. The memory can support high speed, reduced power consumption, and data masking.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin