The present disclosure provides systems and methods for cooling systems for semiconductor and multi-terminal devices. In an aspect, the present disclosure provides a method for dissipating heat from a semiconductor device using a cooling element comprising diamond or another suitable material. In another aspect, the present disclosure provides a method for dissipating heat from a multi-terminal device supplied in a die, the method including attaching a heat distribution layer to a first aide of said die wherein attaching the heat distribution layer comprises mechanical connection, thermal connection, and electrical connection.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/42 - Choix ou disposition de matériaux de remplissage ou de pièces auxiliaires dans le conteneur pour faciliter le chauffage ou le refroidissement
3.
APPARATUS FOR EFFICIENT HIGH-FREQUENCY COMMUNICATIONS
Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
H04W 52/52 - Commande de puissance d'émission [TPC Transmission power control] utilisant des circuits ou des amplificateurs de commande automatique de gain [AGC Automatic Gain Control]
H10D 84/40 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou avec au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET avec des transistors BJT
Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure. In some aspects, an interface of a substrate comprises an interface between a layer of diamond seeds and a semiconductor-containing layered structure, an interface between an intermediate layer and the layer of diamond seeds, and an interface between synthetic diamond and the intermediate layer.
Aspects of features in thermally conductive substrates and methods of forming the same are described. A substrate may comprise a material having an average value of thermal conductivity equal to or greater than about 1,000 W/mK. The substrate may comprise diamond. The substrate may comprise a wide-bandgap semiconductor material. A feature may comprise an interconnect, such as a via hole. A feature may comprise a singulation feature, such as a die street. The substrate may comprise a plurality of crystals each having an average crystal grain diameter from about 10 nanometers to about 100 nanometers. The plurality of crystals may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature. The substrate may comprise a keyhole or void. The keyhole may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature.
The present disclosure provides methods and systems of generating high-efficiency structures for improved wireless communications. Such structures may comprise hard and chemically inert materials. Such structures may include materials having average thermal conductivities equal to or greater than about 1,000 W/mK. Such structures may comprise diamond. Such structures may comprise materials whose properties may be affected through processing such structures. Such structures may comprise devices with improved electron mobilities and efficiencies. Such structures may comprise substrate features. Such features may be configured to communicatively couple to a device or a component of a substrate. A device may comprise a radio transmitter. Some examples include satellite transmitters.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
8.
SUBSTRATE FEATURES IN THERMALLY CONDUCTIVE MATERIALS
Aspects of features in thermally conductive substrates and methods of forming the same are described. A substrate may comprise a material having an average value of thermal conductivity equal to or greater than about 1,000 W/mK. The substrate may comprise diamond. The substrate may comprise a wide-bandgap semiconductor material. A feature may comprise an interconnect, such as a via hole. A feature may comprise a singulation feature, such as a die street. The substrate may comprise a plurality of crystals each having an average crystal grain diameter from about 10 nanometers to about 100 nanometers. The plurality of crystals may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature. The substrate may comprise a keyhole or void. The keyhole may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
9.
DEVICES HAVING AND METHODS OF FORMING THERMALLY CONDUCTIVE SUBSTRATES
Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, the semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure. In some aspects, an interface of a substrate comprises an interface between a layer of diamond seeds and a semiconductor-containing layered structure, an interface between an intermediate layer and the layer of diamond seeds, and an interface between synthetic diamond and the intermediate layer.
The present disclosure provides methods and systems of generating high-efficiency structures for improved wireless communications. Such structures may comprise hard and chemically inert materials. Such structures may include materials having average thermal conductivities equal to or greater than about 1,000 W/mK. Such structures may comprise diamond. Such structures may comprise materials whose properties may be affected through processing such structures. Such structures may comprise devices with improved electron mobilities and efficiencies. Such structures may comprise substrate features. Such features may be configured to communicatively couple to a device or a component of a substrate. A device may comprise a radio transmitter. Some examples include satellite transmitters.
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
B64G 1/50 - Aménagements ou adaptations des dispositifs de contrôle de l'environnement ou des conditions de vie pour la commande de la température
B64G 1/10 - Satellites artificielsSystèmes de tels satellitesVéhicules interplanétaires
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
12.
MATERIAL GROWTH ON WIDE-BANDGAP SEMICONDUCTOR MATERIALS
Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.
1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H04W 52/52 - Commande de puissance d'émission [TPC Transmission power control] utilisant des circuits ou des amplificateurs de commande automatique de gain [AGC Automatic Gain Control]
1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H04W 52/52 - Commande de puissance d'émission [TPC Transmission power control] utilisant des circuits ou des amplificateurs de commande automatique de gain [AGC Automatic Gain Control]
B64G 1/10 - Satellites artificielsSystèmes de tels satellitesVéhicules interplanétaires
G01J 3/44 - Spectrométrie RamanSpectrométrie par diffusion
Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm•1having a full width half maximum of no more than 5.0 cm•1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
H03F 3/04 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
H03G 5/24 - Commande automatique dans des amplificateurs sélectifs en fréquence
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity.
An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
17.
Satellite communication transmitter with improved thermal management
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
B64G 1/50 - Aménagements ou adaptations des dispositifs de contrôle de l'environnement ou des conditions de vie pour la commande de la température
B64G 1/10 - Satellites artificielsSystèmes de tels satellitesVéhicules interplanétaires
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
18.
Microwave transmitter with improved information throughput
An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity.
An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
19.
Satellite communication transmitter with improved thermal management
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
H01L 29/22 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
B64G 1/50 - Aménagements ou adaptations des dispositifs de contrôle de l'environnement ou des conditions de vie pour la commande de la température
B64G 1/10 - Satellites artificielsSystèmes de tels satellitesVéhicules interplanétaires
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
