Method to extract timing diagrams from synchronized single- or two-photon pulsed LADA by spatially positioning the incident laser beam on circuit feature of interest, temporally scanning the arrival time of the laser pulse with respect to the tester clock or the loop length trigger signal, then recording the magnitude and sign of the resulting fail rate signature per laser pulse arrival time. A Single-Photon Laser-Assisted Device Alteration apparatus applies picosecond laser pulses of wavelength having photon energy equal to or greater than the silicon band-gap. A Two-Photon Laser-Assisted Device Alteration apparatus applies femtosecond laser pulses of wavelength having photon energy equal to or greater than half the silicon band-gap at the area of interest. The laser pulses are synchronized with test vectors so that pass/fail ratios can be altered using either the single-photon or the two-photon absorption effect. A sequence of synthetic images with error data illustrates timing sensitive locations.
Milling using a scanning probe microscope with a diamond tip removes a layer of material and produces a surface that is sufficiently smooth that it can be probed using a nanoprober to provide site-specific sample preparation and delayering. Diamond milling provides in situ, localized, precision delayering inside of a nanoprobing tool, thereby decreasing the turnaround time for integrated circuit analysis. Furthermore, unlike focused ion beam delayering, the diamond tip should not alter the electrical characteristics of the integrated circuit.
A charged particle beam, such as an electron beam or an ion beam, scans a device while a signal is applied to the device. As the particle beam scans, it locally heats the device, altering the local electrical characteristics of the device. The change in electrical characteristic is detected to and correlated to the position of the electron beam to localize a defect.
Using a local-potential-driving probe drives a conductor to a known potential while adjacent lines are grounded through the sample body reduces electrostatic scanning microscope signal from adjacent lines, allows imaging of metal lines deeper in the sample. Providing different potentials locally on different conductive lines using multiple local-potential-driving probes allows different conductors to be highlighted in the same image, for example, by changing the phase of the signal being applied to the different local-potential-driving probes.
Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
G01R 27/26 - Mesure de l'inductance ou de la capacitanceMesure du facteur de qualité, p. ex. en utilisant la méthode par résonanceMesure de facteur de pertesMesure des constantes diélectriques
System for performing in-line nanoprobing on semiconductor wafer. A wafer support or vertical wafer positioner is attached to a wafer stage. An SEM column, an optical microscope and a plurality of nanoprobe positioners are all attached to the ceiling. The nanoprobe positioners have one nanoprobe configured for physically contacting selected points on the wafer. A force (or touch) sensor measures contact force applied by the probe to the wafer (or the moment) when the probe physically contacts the wafer. A plurality of drift sensors are provided for calculating probe vs. wafer alignment drift in real-time during measurements.
A method for probing a semiconductor device under test (DUT) using a combination of scanning electron microscope (SEM) and nanoprobes, by: obtaining an SEM image of a region of interest (ROI) in the DUT; obtaining a CAD design image of the ROI; registering the CAD design image with the SEM image to identify contact targets; obtaining a Netlist corresponding to the contact targets and using the Netlist to determine which of the contact targets should be selected as test target; and, navigating nanoprobes to land a nanoprobe on each of the test targets and form electrical contact between the nanoprobe and the respective test target.
A near- field optic (6) has a high refractive index waveguide (22) with a planar far field facet (14, 32) more than half of a wavelength across for coupling propagating light and a near field facet with the near field zone (28) of the waveguide supporting only the fundamental optical mode in each polarization. A tapered waveguide section (8) extends from the near field facet to transform the fundamental optical mode. A cantilever (24) supports the tapered waveguide section.
G02B 6/122 - Éléments optiques de base, p. ex. voies de guidage de la lumière
9.
System and method for non-contact microscopy for three-dimensional pre-characterization of a sample for fast and non-destructive on sample navigation during nanoprobing
A system for performing sample probing. The system including an topography microscope configured to receive three-dimensional coordinates for a sample based on at least three fiducial marks; receive the sample mounted in a holder; and navigate to at least a location on the sample based on the at least three fiducial marks and the three-dimensional coordinates.
G02B 27/32 - Repères fiduciels ou échelles de mesure à l'intérieur du système optique
G01Q 10/00 - Dispositions pour le balayage ou le positionnement, c.-à-d. dispositions pour commander de manière active le mouvement ou la position de la sonde
G01Q 30/02 - Dispositifs d'analyse d’un type autre que la microscopie à sonde à balayage SPM, p. ex. microscope électronique à balayage SEM [Scanning Electron Microscope], spectromètre ou microscope optique
G01Q 60/00 - Types particuliers de microscopie à sonde à balayage SPM [Scanning-Probe Microscopy] ou appareils à cet effetComposants essentiels de ceux-ci
G01Q 60/38 - Sondes, leur fabrication ou leur instrumentation correspondante, p. ex. supports
An optics arrangement for a solid immersion lens (SIL) is disclosed. The arrangement enables the SIL to freely tilt. The arrangement includes a SIL having an optical axis extending from an engaging surface and a rear surface of the SIL; a SIL housing having a cavity configured to accept the SIL therein while allowing the SIL to freely tilt within the cavity, wherein the cavity includes a hole positioned such that the optical axis passes there-through, to thereby allow light collected by the SIL to propagate to an objective lens; and, a SIL retainer attached to the SIL housing and configured to prevent the SIL from exiting the cavity.
A system for analyzing a sample is described. The system for analyzing a sample includes a probe and a controller circuit. The controller circuit configured to control a movement of the probe to at least a first position and a second position on the sample based on navigation data. In response to the movement of the probe, the controller circuit is configured to adjust a force of the probe on the sample at the first position from a first force value to a second force value and the force of the probe on the sample from a third force value to a fourth force value at said second position on the sample. And, the controller circuit is configured to acquire sample data with the probe at the first position on the sample.
G01Q 10/00 - Dispositions pour le balayage ou le positionnement, c.-à-d. dispositions pour commander de manière active le mouvement ou la position de la sonde
G21K 5/10 - Dispositifs d'irradiation pourvus de dispositions permettant un mouvement relatif entre la source du rayonnement et l'objet à irradier
G01Q 30/02 - Dispositifs d'analyse d’un type autre que la microscopie à sonde à balayage SPM, p. ex. microscope électronique à balayage SEM [Scanning Electron Microscope], spectromètre ou microscope optique
12.
LIT METHOD AND SYSTEM FOR DETERMINING MATERIAL LAYER PARAMETERS OF A SAMPLE
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Allemagne)
Inventeur(s)
Schmidt, Christian
Meinhardt-Wildegger, Raiko
Abrégé
Determining material parameters of a sample using lock-in thermography (LIT. Applying a non-harmonic test signal to the electrical circuit of the sample layer and imaging the sample layer using infrared sensor to obtain IR images of the sample layer while the non-harmonic test signal is applied to the electrical circuit; detecting a thermal response signal obtained from the imaging being in correlation to thermal heat propagation within the sample layer; subjecting the response signal to a fast Fourier transformation (FFT) to break down the response signal into a frequency spectrum containing at least first and second harmonics signals of a base harmonic sine or cosine signal as frequency specific response signals at multiple specific frequencies; determining the phase shifts of the frequency specific response signals at the multiple specific frequencies at a heat source position; and obtaining a frequency vs, phase shift curve.
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V. (Allemagne)
Inventeur(s)
Schmidt, Christian
Meinhardt-Wildegger, Raiko
Altmann, Frank
Naumann, Falk
Schlangen, Rudolf
Abrégé
A method for localizing a hot spot (27) in a sample (12), in particular an encapsulated device under test (DUT), by using lock-in thermography (LIT), where at least one heat source (23) of an electrical circuit is buried within the sample (12) and generated the hot spot (27) upon flow of current therein, comprises applying a non-harmonic excitation wave test signal at a lock-in frequency to the electrical circuit of the sample (12) to activate the heat source (23) for generating the hot spot (27); imaging the sample (12) using an infrared sensor (16) to obtain IR images of the sample (12) while the non-harmonic test signal is applied to the electrical circuit; and detecting a thermal response signal obtained from the imaging, the thermal response signal being in correlation to the thermal heat propagation within the sample (12). The invention is characterized in that applying the non-harmonic test signal comprises applying a non-harmonic signal at a single selected frequency; that the thermal response signal is subjected to a Fourier transformation (FT) to break down the thermal response signal into a frequency spectrum containing harmonics signals of a base and higher harmonic signals to thereby obtain a plurality of frequency-specific response signals at multiple specific frequencies; that the phase shifts of each of the frequency-specific response signals is determined; that a frequency vs. phase shift curve is obtained from the phase shifts of the frequency-specific response signals; and that a plurality of images, each corresponding to one of the specific frequencies are displayed.
G01R 31/309 - Test sans contact utilisant des rayonnements électromagnétiques non ionisants, p. ex. des rayonnements optiques de circuits imprimés ou hybrides
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Allemagne)
Inventeur(s)
Schmidt, Christian
Abrégé
Localizing hot spots in multi-layered device under test (DUT) using lock-in thermography (LIT) where plural hot spots of electrical circuits are buried in the DUT at different depth layers from a bottom layer to a top layer, comprises applying test signals of multiple frequencies to the electrical circuits of the DUT for exciting the hot spots; imaging a top surface of the top layer of the DUT at timed intervals to obtain IR images of the DUT while the test signal is applied to the electrical circuits wherein the images are in correlation to a propagation of heat from the hot spots in the DUT; detecting the thermal response signals at the timed intervals from the images taken from the DUT; and determining changes in the appearance of hot spot images on the top surface of the DUT in relation to the frequencies of the thermal response signals.
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Allemagne)
Inventeur(s)
Altmann, Frank
Schmidt, Christian
Schlangen, Rudolf
Deslandes, Herve
Abrégé
A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
G01R 31/311 - Test sans contact utilisant des rayonnements électromagnétiques non ionisants, p. ex. des rayonnements optiques de circuits intégrés
G01N 1/00 - ÉchantillonnagePréparation des éprouvettes pour la recherche
G01N 25/00 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
17.
OPTIMIZED WAVELENGTH PHOTON EMISSION MICROSCOPE FOR VLSI DEVICES
A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and,performing emission testing on the DUT.
An apparatus and method for laser probing of a DUT is disclosed. The system enables laser voltage imaging state mapping of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. Phase information is extracting from the electrical signal and a two-dimensional image is generated from the phase information, wherein the two-dimensional image spatially correlates to the selected area.
Method to extract timing diagrams from synchronized single- or two-photon pulsed LADA by spatially positioning the incident laser beam on circuit feature of interest, temporally scanning the arrival time of the laser pulse with respect to the tester clock or the loop length trigger signal, then recording the magnitude and sign of the resulting fail rate signature per laser pulse arrival time. A Single-Photon Laser- Assisted Device Alteration apparatus applies picosecond laser pulses of wavelength having photon energy equal to or greater than the silicon band-gap. A Two-Photon Laser-Assisted Device Alteration apparatus applies femtosecond laser pulses of wavelength having photon energy equal to or greater than half the silicon band-gap at the area of interest. The laser pulses are synchronized with test vectors so that pass/fail ratios can be altered using either the single-photon or the two-photon absorption effect. A sequence of synthetic images with error data illustrates timing sensitive locations.
G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
20.
Synchronized pulsed LADA for the simultaneous acquisition of timing diagrams and laser-induced upsets
Method to extract timing diagrams from synchronized single- or two-photon pulsed LADA by spatially positioning the incident laser beam on circuit feature of interest, temporally scanning the arrival time of the laser pulse with respect to the tester clock or the loop length trigger signal, then recording the magnitude and sign of the resulting fail rate signature per laser pulse arrival time. A Single-Photon Laser-Assisted Device Alteration apparatus applies picosecond laser pulses of wavelength having photon energy equal to or greater than the silicon band-gap. A Two-Photon Laser-Assisted Device Alteration apparatus applies femtosecond laser pulses of wavelength having photon energy equal to or greater than half the silicon band-gap at the area of interest. The laser pulses are synchronized with test vectors so that pass/fail ratios can be altered using either the single-photon or the two-photon absorption effect. A sequence of synthetic images with error data illustrates timing sensitive locations.
Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.
The invention provides a method for a non-destructive, non-contacting and image forming examination of a sample by means of heat flow thermography. The method comprises exciting the sample at least twice independently from each other by means of the heat pulses from the excitation source; taking a first thermal image of the surface of the sample at a first time distance Δt1 from a first triggering of the heat pulse which first time distance Δt1 is characteristic for gradients in heat flow velocity in a first depth below the surface of the sample; taking a second thermal image of the surface of the sample at a 1 second time distance Δt2 from a second triggering of the heat pulse which second time distance Δt2 is characteristic for gradients in heat flow velocity in a second depth below the first depth; and taking any thermal images of the surface of the sample at a further time distances Δtn from any subsequent triggering of the heat pulse which further time distances Δtn are characteristic for gradients in heat flow velocity in further depths lying deeper as the second depth; and extracting from the thermal images an indication of the presence of any gradients of heat flow velocity at the respective depth distances from a surface of the sample. The system is configured to carry out the above method.
An optical detector is disclosed, having a plurality of detector cells, each detector cell comprising a light sensor, a charge accumulator, and a switch interposed between the light sensor and the charge accumulator; wherein the light sensor produces electrical current when illuminated by electromagnetic radiation, the charge accumulator accumulate electric charge when receiving the electrical current generated by the light sensor, and the switch is configured to controllably electrically isolate or connect the charge accumulator to light sensor, such that the charge accumulator accumulates charge only when electrically connected by the switch to the light sensor.
G01R 31/311 - Test sans contact utilisant des rayonnements électromagnétiques non ionisants, p. ex. des rayonnements optiques de circuits intégrés
24.
SYSTEM AND METHOD FOR NON-CONTACT MICROSCOPY FOR THREE-DIMENSIONAL PRE-CHARACTERIZATION OF A SAMPLE FOR FAST AND NON-DESTRUCTIVE ON SAMPLE NAVIGATION DURING NANOPROBING
A system for performing sample probing. The system including an topography microscope configured to receive three-dimensional coordinates for a sample based on at least three fiducial marks; receive the sample mounted in a holder; and navigate to at least a location on the sample based on the at least three fiducial marks and the three- dimensional coordinates.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
25.
System and method for non-contact microscopy for three-dimensional pre-characterization of a sample for fast and non-destructive on sample navigation during nanoprobing
A system for performing sample probing. The system including an topography microscope configured to receive three-dimensional coordinates for a sample based on at least three fiducial marks; receive the sample mounted in a holder; and navigate to at least a location on the sample based on the at least three fiducial marks and the three-dimensional coordinates.
G01Q 60/00 - Types particuliers de microscopie à sonde à balayage SPM [Scanning-Probe Microscopy] ou appareils à cet effetComposants essentiels de ceux-ci
G01Q 10/00 - Dispositions pour le balayage ou le positionnement, c.-à-d. dispositions pour commander de manière active le mouvement ou la position de la sonde
G01Q 60/38 - Sondes, leur fabrication ou leur instrumentation correspondante, p. ex. supports
G01Q 60/48 - Sondes, leur fabrication ou leur instrumentation correspondante, p. ex. supports
26.
P and N region differentiation for image-to-CAD alignment
In one embodiment, a method for aligning an image of a semiconductor device with a bitmap representation thereof includes receiving diffusion layer information of at least a portion of the semiconductor device, receiving implant layer information of the at least a portion of the semiconductor device, deriving distinct p- and n-doped region information from the received diffusion and implant layer information, generating the bitmap representation, including a differentiation between the distinct p- and n-doped regions, and performing an alignment operation of the image of the semiconductor device with generated bitmap representation.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
27.
P AND N REGION DIFFERENTIATION FOR IMAGE-TO-CAD ALIGNMENT
In one embodiment, a method for aligning an image of a semiconductor device with a bitmap representation thereof includes receiving diffusion layer information of at least a portion of the semiconductor device, receiving implant layer information of the at least a portion of the semiconductor device, deriving distinct p- and n-doped region information from the received diffusion and implant layer information, generating the bitmap representation, including a differentiation between the distinct p- and n-doped regions, and performing an alignment operation of the image of the semiconductor device with generated bitmap representation.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
28.
LASER-ASSISTED DEVICE ALTERATION USING SYNCHRONIZED LASER PULSES
A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single- photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed- pulse laser source.
A semiconductor wafer processing tool has a support structure (12) for a coarse motion positioning system (14). A measurement head (26) having a rigid super structure (28) is supported from the support structure by vibration isolators (30a, 30b) and a top plate (32) is mounted to the super structure. A vacuum transfer chuck (24) is releasably carried by the coarse motion positioning system and releasably adherable to the top plate by application of vacuum. The vacuum transfer chuck supports a semiconductor wafer (42).
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
B23Q 3/08 - Moyens de fixation de la pièce autres que les moyens actionnés mécaniquement
30.
Laser-assisted device alteration using synchronized laser pulses
A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source.
A method for calculating a centreline of an object is disclosed. An image of the object is divided into test areas. For each test area, detection direction and scanning direction are assigned from a list of limited directions. For each test area, at each scanning point a local point of the centreline is determined along the detection direction. An assigned smoothing function is applied to the collection of local points to determine the collection of pixels which define the centreline. The collection of pixels can be used to calculate the length of the centreline. Also, the coordinates of the pixels of the centreline can be used to average the intensity of the image along the centreline.
A semiconductor wafer processing tool has a support structure for a coarse motion positioning system. A measurement head having a rigid super structure is supported from the support structure by vibration isolators and a top plate is mounted to the super structure. A vacuum transfer chuck is releasably carried by the coarse motion positioning system and releasably adherable to the top plate by application of vacuum. The vacuum transfer chuck supports a semiconductor wafer.
B23B 31/30 - Mandrins de serrage caractérisés par le système de commande à distance des moyens de serrage utilisant des moyens hydrauliques ou pneumatiques dans le mandrin
33.
METHOD FOR EXAMINATION OF A SAMPLE BY MEANS OF THE HEAT FLOW THERMOGRAPHY
The invention provides a method for a non-destructive, non-contacting and image forming examination of a sample by means of the heat flow thermography method where the examination consists of evaluating an existence and/or depth distance values of any heat flow velocity transitions below a surface of the sample, wherein the sample is excited by heat pulses of at least one excitation source, and a thermal flow originating therefrom is captured by at least one infrared sensor in an image sequence of thermal images, and wherein the thermal images obtained from the image sequence are evaluated by means of a signal and image processing and depicting a thermal flow with a resolution in time and in space. The method comprises: exciting the sample at least twice independently from each other by means of the heat pulses from the excitation source where a second excitation and any succeeding excitation is delayed with respect to a preceding excitation by a time delay whereby the start of the captured sequence happens at another defined point of time within the time between two images within an image sequence; detecting the respective total thermal flow processes generated by the at least two excitation processes of the sample by the infrared sensor in the independent image sequences containing the excitation as well as the thermal answer signal from the sample, combining all captured image sequences to a total image sequence in which all images are arranged in a sequence which is correct in time with respect to the point of time of the pulse like excitation, and extracting from the total image sequence, in a manner known per se, an indication of the depth distance of a heat flow velocity transition from a surface of the sample. Therein, the heat flow velocity transitions can be a boarder layer of a layered material or defects in a substrate or below a surface of a work piece.
A method of obtaining two orthogonally polarized super-resolution images is provided. A first diffraction-limited image is obtained using horizontally polarized light; a second diffraction-limited image is obtained using vertically polarized light; and, the first and second images are processed so as to yield a convoluted image having super diffraction-limited performance in both dimensions. Enhanced alignment of CAD image to acquired image is facilitated using the horizontally and vertically polarized images.
A method of obtaining two orthogonally polarized super-resolution images is provided. A first diffraction-limited image is obtained using horizontally polarized light; a second diffraction-limited image is obtained using vertically polarized light; and, the first and second images are processed so as to yield a convoluted image having super diffraction-limited performance in both dimensions. Enhanced alignment of CAD image to acquired image is facilitated using the horizontally and vertically polarized images.
An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC.
Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.
A Two-Photon Laser Assisted Device Alteration technique is presented. Fault localization is investigated by exploiting the non-linear two-photon absorption mechanism to induce LADA effects. Femtosecond laser pulses of wavelength having photon energy lower than the silicon bandgap are directed at the area of interest, while the DUT is stimulated with test vectors. The laser pulses are synchronized to the DUT stimulation, so that switching timing can be altered using the two-photon absorption effect.
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Allemagne)
Inventeur(s)
Altmann, Frank
Schmidt, Christian
Schlangen, Rudolf
Deslandes, Herve
Abrégé
A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time -resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V. (Allemagne)
Inventeur(s)
Altmann, Frank
Schmidt, Christian
Schlangen, Rudolf
Deslandes, Herve
Abrégé
A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.
G01N 1/00 - ÉchantillonnagePréparation des éprouvettes pour la recherche
G01N 25/00 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC.
An apparatus and method for laser probing of a DUT is disclosed. The system enables laser voltage imaging state mapping of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. Phase information is extracting from the electrical signal and a two-dimensional image is generated from the phase information, wherein the two-dimensional image spatially correlates to the selected area.
G01R 13/38 - Dispositions pour la présentation de variables électriques ou de formes d'ondes utilisant le déplacement stable ou oscillatoire d'un faisceau lumineux par un système de mesure électromécanique
G01R 13/40 - Dispositions pour la présentation de variables électriques ou de formes d'ondes utilisant la modulation d'un faisceau lumineux par des moyens autres qu'un déplacement mécanique, p. ex. par effet Kerr
An improved method, apparatus, and control/guiding software for localizing, characterizing, and correcting defects in integrated circuits, particularly open or resistive contact/via defects and metal bridging defects, using FIB technology. An apparatus for identifying an abnormal discontinuity in a contact/via in an integrated circuit comprising a focused ion beam system to scan the ion beam over the contact/via to do remove or deposit via material, a detector to collect a secondary particle signal from the contact/via material that gets removed, a sub-system for storing the secondary particle signal from the contact/via in time as well as x-y scan position, a sub-system for correlating secondary particle signals and identifying discontinuities in the correlated secondary particle signals, a sub-system for optimizing the display of the abnormal discontinuity; and a computer to implement software aspects of the system.
A method of performing alignment of an array of probe tips of a probe card to corresponding contact pads for wafer probing applications by performing the steps of: obtaining a backside image of the wafer; overlaying a mapping of the contact pads over the backside image; selecting contact pads as landing points; obtaining an image of the probe tips array; comparing the landing points to corresponding positions of probe tips; and, if the positions of probe tips are not aligned with the landing point, rotating the probe card to align the positions of probe tips to the landing points.
A collection optics having variable magnification, and which enable changing magnification without stopping the spray cooling. The variable magnification is provided by a turret that carries several objectives of different magnifications. A frame is provided above the turret, wherein the spray cooling is provided. By rotating the turret and changing its elevation, different objectives of the turret can be “docked” to a docking port within the frame.
In a method for automated, contactless and non-destructive testing of a material joint (4), a dynamic threshold value is varied between a minimum threshold value and a maximum threshold value, with regions of a heat flow dynamics through the material joint (4) being determined which represent values of the heat flow dynamics exceeding the dynamic threshold value. The regions of the heat flow dynamics are examined with respect to an abrupt change in perimeter. An Abrupt change in perimeter occurs if a boundary (7) between a molten zone (5) and a non-molten but still adhering zone (6) of the material joint (4) is being crossed.
An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC.
A system and method for improving FIB milling endpointing operations. The methods involve generating real-time images of the area being milled and real-time graphical plots of pixel intensities with an increased sensitivity over native FIB system generated images and plots. The images and plots are generated with raw signal data obtained from the native FIB system. More specifically, the raw signal data is processed according to specific algorithms for generating images and corresponding intensity graphs which can be reliably used for accurate endpointing. In particular, the displayed images will display more visual information regarding changes in milled material, while the intensity graphs will plot aggregate pixel intensity data on a dynamically adjusting scale to dramatically highlight relative changes in milled material.
A method and apparatus for optimizing an integrated circuit design for post-fabrication circuit editing and diagnostics. The method and apparatus is specifically directed to adding designed-for-edit modifications and designed-for-diagnostics structures to an integrated circuit design for post-fabrication circuit editing with a charged-particle beam tool. An integrated circuit design may be modified to create efficient and reliable access to specified nodes and structures, such as spare gates, by the charged-particle beam tool during subsequent testing and debugging of the fabricated device. Additionally, structures such as spare gates, spare transistors, spare metal wires, and debug circuitry may be added to an integrated circuit design to provide for easier editing of portions of the design that may fail.
In a method for the automatic inspection of a welding seam using heat flow thermography, a feature vector (W(N)) is established which represents a time profile of a detected heat flow (11). The feature vector (W(N)) is used to ascertain a first characteristic thermal image, which corresponds to a minimum heat flow (Wmin) through an object under test, and a second characteristic thermal image, which corresponds to a maximum heat flow (Wmax) through the object, from a series of thermal images, wherein a heat flow (13) directly from an excitation source has already dissipated. In order to detect and evaluate the welding seam with respect to defects of different types of defect, one suitable thermal image from the series of thermal images is used for each defect type, wherein the characteristic thermal images serve as references for determining the thermal image which is suitable in each case.
In a method and device for adaptively altering the integration time of an infrared sensor (8), provision is made for a set value for the integration time to be automatically determined as a function of the temperature information determined of an object (2) to be tested. The dynamic range of the infrared sensor (8) may thus be dynamically adapted to the temperature range of interest for the object (2) to be tested.
Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor, testing device to accomplish IV and CV measurement supports a semiconductor wafer (14) and provides a probe (12) for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing de\ ice for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance (204) sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current (202) sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
53.
System and method for resolving photoemission from semiconductor devices
A method for isolating the emitting devices may be applied to various emission and laser microscopy systems. A point spread function is convolved with CAD data of devices involved in the emission. The calculated signal intensity of the devices is varied until the difference between the calculated signal and the measured signal provides best fit. The best fit is performed for each on/off state for all configurations of the involved devices. The variance of the best curve fit for all of the configurations is used to assign probability to each state. The best fit indicates the correct state of each of the involved devices, thereby indicating which devices emit. At times, when the transistors are extremely close, a weighted solution is calculated. The weights are based on the probability of each solution.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
54.
METHOD FOR THE AUTOMATIC ANALYSIS OF A MATERIAL BOND
In a method for the automatic, touch-free and destruction-free analysis of a material bond (4), a dynamic threshold value is varied between a minimum threshold value and a maximum threshold value, wherein regions of heat flow dynamics are determined by means of the material bond (4), which detect values of the heat flow dynamics above the dynamic threshold value. The regions of the heat flow dynamics are analyzed with regard to erratic circumference changes. An erratic circumference change occurs when a limit (7) has been exceeded between a melted zone (5) and a non-melted, but still adhering zone (6) of the material bond (4).
An apparatus including a positioner control device, a measuring device and a control routine. The positioner control device is communicatively coupled to a chamber of a charged particle beam device (CPBD) and is configured to individually manipulate each of a plurality of probes within the CPBD chamber to establish contact between ones of the plurality of probes and corresponding ones of a plurality of contact points of a sample positioned in the CPBD chamber. The measuring device is communicatively coupled to the CPBD and the positioner control device and is configured to perform one of a measurement and a detection of a characteristic associated with one of the plurality of contact points. The control routine is configured to at least partially automate control of at least one of the CPBD, the positioner control device and the measuring device.
G01R 31/305 - Test sans contact utilisant des faisceaux électroniques
G01R 31/02 - Essai des appareils, des lignes ou des composants électriques pour y déceler la présence de courts-circuits, de discontinuités, de fuites ou de connexions incorrectes de lignes
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
A method, system and apparatus are presented for real time analysis of images in a focused beam system. In various embodiments, marker positions are displayed as graphical elements on the image of a sample being processed. Selected characteristics of all or a portion of the pixels in the image are used to determine the positions. The marker positions are used to detect the occurrence of an event such as an endpoint. In some embodiments attributes of the of the graphic elements change based on the occurrence of selected events and in further embodiments an action is initiated.
Enhanced algorithms are provided for finding circuit edit locations which utilize automated conversions from circuit schematic to physical layout design. The enhanced algorithms further include a user interface enabling the user to provide preferences, limitations, and constraints in order to bias the search to be conducted, as well as using the provided design data in order to locate the best positions for particular edit schemes, including net cuts and net joins.
Time-resolved emission can be used to measure loop-synchronous, small-signal voltage perturbation in integrated circuits. In this technique the measurements are completely non-invasive and so reflect the true device behavior. The time-dependant propagation delay caused by Vdd modulation also shows the expected qualitative signature. This technique should find applications in circuits with relatively fast clock-like circuits where loop-synchronous voltage pickup is limiting circuit behavior.
A method for identifying an area of a chip to be probed proceeds as follows. A callout list of failures is obtained from a tester, the list including cell name and pin for each failure. A Def file is interrogated to locate a Def entry matching the cell name, and a cell type, cell location, and cell orientation data is obtained for the cell from the Def file. A Lef file is then interrogated to locate a Lef entry matching the cell type, and the coordinates of the pin are obtaining from the Lef file. A GDS file is interrogated to locate a GDS entry matching the cell type, and the coordinates of polygons listed in the GDS entry are obtained. The coordinates of the pin are then crossed with the coordinates of the polygons to identify overlapping area. The overlapping area is defined as the location to be probed. A driving signal is applied to a stage to align a prober with the location to be probed.
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
60.
Deconvolving tip artifacts using multiple scanning probes
The present invention comprises an apparatus and a method for using multiple scanning probes to deconvolve tip artifacts in scanning probe microscopes and other scanning probe systems. The invention uses multiple scanning probe tips of different geometries or orientations to scan a feature, such as a semiconductor line or trench, and to display the scan data such that tip artifacts from each tip can be omitted from the measurement by data from the other tips.
G01B 5/28 - Dispositions pour la mesure caractérisées par l'utilisation de techniques mécaniques pour mesurer la rugosité ou l'irrégularité des surfaces
An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC.
A system for probing a DUT is provided, the system comprising a tunable or CW laser source, a modulator for modulating the output of the laser source, a beam optics designed to point a probing beam at a designated location on the DUT, optical detector for detecting the reflected beam, and collection and signal processing electronics. The system deciphers perturbations in the reflected beam by detecting beat frequency between operation frequency of the DUT and frequency of the modulation. In an alternative embodiment, the laser is CW and the modulation is applied to the optical detector.
A method and apparatus for defining a circuit operation, such as a charged particle beam operation to perform a circuit edit and define a probe point. Circuit operation definition is performed in a front-end environment with access to integrated circuit computer aided design tools providing logic level and layout level information concerning the integrated circuit. The front-end environment incorporates circuit operation optimization methods to identify optimal locations for a circuit operation. A back-end environment, such as a charged particle tool computing platform, is adapted to receive one or more files, which may include a truncated layout file with circuit operation location information, for use in further defining a circuit operation and/or performing the circuit operation.
The present invention comprises an apparatus and a method for using multiple scanning probes to deconvolve tip artifacts in scanning probe microscopes and other scanning probe systems. The invention uses multiple scanning probe tips (130, 312) of different geometries or orientations to scan a feature, such as a semiconductor line or trench (134), and to display the scan data such that tip artifacts (138) from each tip can be omitted from the measurement by data from the other tips.
G01B 7/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur
An apparatus including a positioner control device, a measuring device and a control routine. The positioner control device is communicatively coupled to a chamber of a charged particle beam device (CPBD) and is configured to individually manipulate each of a plurality of probes within the CPBD chamber to establish contact between ones of the plurality of probes and corresponding ones of a plurality of contact points of a sample positioned in the CPBD chamber. The measuring device is communicatively coupled to the CPBD and the positioner control device and is configured to perform one of a measurement and a detection of a characteristic associated with one of the plurality of contact points. The control routine is configured to at least partially automate control of at least one of the CPBD, the positioner control device and the measuring device.
G01R 31/305 - Test sans contact utilisant des faisceaux électroniques
G01R 31/02 - Essai des appareils, des lignes ou des composants électriques pour y déceler la présence de courts-circuits, de discontinuités, de fuites ou de connexions incorrectes de lignes
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
66.
Apparatus and method for optical interference fringe based integrated circuit processing
An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
An apparatus and method are disclosed for hard-docking of a tester head to a DUT, while permitting the angular alignment of a specimen to be inspected to the optical axis of an optical testing tool. In one example, a system for orthogonal alignment of a specimen to an optical axis of a collection optics is provided. The system comprises a self-leveling tabletop; a specimen holder coupled to the tabletop and held at a fix orientation; collection optics coupled to the tabletop; a plunger coupled to the tabletop and operable to maintain the leveling orientation of the tabletop; a control valve sensing the leveling orientation of the tabletop and coupled to the plunger to control the operation of the plunger; and an aligner coupled to the tabletop and operable to change the alignment of the optical axis of the collection optics with respect to the specimen without changing the fixed orientation of the specimen holder.
An optical coupling apparatus for a dual column charged particle beam tool allowing both optical imaging of an area of an integrated circuit, as well as localized heating of the integrated circuit to form silicide. In one embodiment, optical paths from a whitelight source and a laser source are coupled together by way of first and second beam splitters so that a single optical port of the dual column tool may be utilized for both imaging and heating. In another embodiment, a single laser source is employed to provide both illumination for standard microscopy-type imaging, as well as localized heating. In a third embodiment, a single laser source provides heating along with localized illumination for confocal scanning microscopy-type imaging.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
70.
Light beam apparatus and method for orthogonal alignment of specimen
A system for orthogonal alignment of a specimen disclosed. The system includes a light-beam illumination source, collection optics, imaging optics, and a tiltable specimen holder. The light-beam source is activated to illuminate a spot on the specimen, and the imaging optics is used image that spot. The location of the spot on the imager is used to determine whether the specimen is orthogonal to the optical axis of the collection optics.
An apparatus including a base configured to slidably engage a driven element, a piezoelectric element interposing the base and the driven element and attached to the base proximate a first piezoelectric element end, and a friction element attached proximate a second piezoelectric element end and configured to selectively engage the driven element.
A method including directing a first electrical signal to at least one of a plurality of probes each positioned within a chamber of a charged particle beam device. At least one of the plurality of probes is exposed to a charged particle beam of the charged particle beam device, and a second electrical signal is compared to the first electrical signal to determine a characteristic associated with the at least one of the plurality of probes.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
G21K 7/00 - Microscopes à rayons gamma ou à rayons X
brevets
