Various example embodiments relate to a PCB for radiation detection Example embodiments may comprise: a hole, wherein a scintillator material is arranged to the hole along a depth direction of the hole such that the scintillator material comprises a thickness; and wherein the thickness of the scintillator material is configured to be such that the scintillator material converts radiation in a first energy range to radiation in a second energy range, the second energy range comprising lower energies than the first energy range.
According to an embodiment, a radiation detector arrangement comprises: a first plurality of detector rows configured to detect radiation in a first energy range; and a second plurality of detector rows configured to detect radiation in a second energy range, wherein the second energy range is different from the first energy range; wherein the first plurality of detector rows and the second plurality of detector rows are arranged for scanning an object moving in a movement direction and a number of the first plurality of detector rows per distance along the movement direction is greater than a number of the second plurality of detector rows per distance along the movement direction.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01V 5/22 - Interrogation active, c.-à-d. par irradiation des objets ou des biens à l’aide de sources de rayonnement externes, p. ex. en utilisant des rayons gamma ou des rayons cosmiques
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
It is an object to provide a device and a method for x-ray and/or gamma ray detection. a detector comprising a plurality of pixels, each pixel in the plurality of pixels being switchable between a floating mode and a detection mode, wherein each pixel in the plurality of pixels is configured to detect incident x-ray and/or gamma ray radiation when in the detection mode; a control unit coupled to the detector, configured to: during a first temporal frame, configure a first subset of pixels in the plurality of pixels to the floating mode and a second subset of pixels in the plurality of pixels to the detection mode; and during a second temporal frame, configure a third subset of pixels in the plurality of pixels to the floating mode and a fourth subset of pixels in the plurality of pixels to the detection mode.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
It is an object to provide a device and a method for x-ray and/or gamma ray detection. According to an embodiment, a device comprises: a detector comprising a plurality of pixels, wherein the plurality of pixels comprises a first subset of pixels configured to detect incident x-ray or gamma ray radiation in a first energy range and a second subset of pixels configured to detect incident x-ray or gamma ray radiation in a second energy range; a processing unit configured to: obtain a signal from each pixel in the plurality of pixels; obtain a radiation intensity value for each pixel in the plurality of pixels based on the signal of each pixel; calculate a radiation intensity estimate in the first energy range for at least one pixel in the second subset of pixels. A device and a method are provided.
A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations
A61B 6/40 - Agencements pour générer des radiations spécialement adaptés au diagnostic par radiations
An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
H01L 31/118 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire du type détecteurs à barrière de surface ou à jonction PN superficielle, p.ex. détecteurs de particules alpha à barrière de surface
It is an object to provide an imaging method and system. According to an embodiment, an imaging method comprises emitting neutrons into a material, wherein the material converts at least part of the emitted neutrons into a first plurality of gamma ray photons, and wherein at least part of the emitted neutrons pass through the material. Based on the neutrons passed through the material and the gamma ray photons, at least one property of the material can be deduced. An imaging method and an imaging system are provided.
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p. ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
A61N 5/10 - RadiothérapieTraitement aux rayons gammaTraitement par irradiation de particules
G01N 23/05 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux en utilisant des neutrons
A radiation sensor element comprises a support plate, having a front face, extending substantially along a base plane, defining a lateral extension of the radiation sensor element; a substrate, having a basal face, an interconnection face opposite the basal face, and an edge face connecting the basal face and the interconnection face; a sensor tile, having a back face facing the interconnection face; a copper-pillar interconnection element between the interconnection face and the back face; and a non-conductive film extending between the interconnection face and the back face. The front face comprises, laterally beyond the edge face, a depression extending in a thickness direction perpendicular to the base plane, and the non-conductive film comprises an edge protrusion part extending in the depression.
It is an object to provide a device and a method for x-ray and/or gamma ray detection. According to an embodiment, a device comprises: a detector comprising a plurality of pixels, wherein the plurality of pixels comprises a first subset of pixels configured to detect incident x-ray or gamma ray radiation in a first energy range and a second subset of pixels configured to detect incident x-ray or gamma ray radiation in a second energy range; a processing unit configured to: obtain a signal from each pixel in the plurality of pixels; obtain a radiation intensity value for each pixel in the plurality of pixels based on the signal of each pixel; calculate a radiation intensity estimate in the first energy range for at least one pixel in the second subset of pixels. A device and a method are provided.
It is an object to provide a device and a method for x-ray and/or gamma ray detection. A detector comprising a plurality of pixels, each pixel in the plurality of pixels being switchable between a floating mode and a detection mode, wherein each pixel in the plurality of pixels is configured to detect incident x-ray and/or gamma ray radiation when in the detection mode; a control unit coupled to the detector, configured to: during a first temporal frame, configure a first subset of pixels in the plurality of pixels to the floating mode and a second subset of pixels in the plurality of pixels to the detection mode; and during a second temporal frame, configure a third subset of pixels in the plurality of pixels to the floating mode and a fourth subset of pixels in the plurality of pixels to the detection mode. A device and a method are provided.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
A radiation sensor element (100) is provided. The radiation sensor element (100) comprises a read-out integrated circuit (110) having an interconnection face (111), a compound semiconductor layer (120) opposite the interconnection face (111), and a copper-pillar interconnection element (130) extending from the interconnection face (111) towards the compound semiconductor layer (120).
A radiation sensor element (100) is provided. The radiation sensor element (100) comprises a read-out integrated circuit (110) having an interconnection face (111), a compound semiconductor layer (120) opposite the interconnection face (111), and a copper-pillar interconnection element (130) extending from the interconnection face (111) towards the compound semiconductor layer (120).
The copper-pillar interconnection element (130) comprises a copper part (131) and an oxidation barrier layer (132), comprising a noble metal and arranged between the copper part (131) and the compound semiconductor layer (120).
According to an embodiment, a device comprises: a scintillator layer configured to convert x-ray or gamma ray photons into photons of visible light; a photodiode layer configured to convert visible light produced by the scintillator layer into an electric current; an integrated circuit, IC, layer situated below the photodiode layer and configured to receive and process the electric current; wherein electrical contacts of the IC layer are connected to electrical contacts of the photodiode layer using wire-bonding; and wherein the wire-bonding is covered with a protective material while bottom part of the IC layer is left at least partly exposed. Other embodiments relate to a detector comprising an array of tiles according to the device; and an imaging system comprising: an x-ray source and the detector.
It is an object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector comprises: a photodiode layer comprising at least one pixel; and a scintillator layer comprising at least one geometrical shape comprising a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into non-ionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are provided.
It is an object to provide an imaging method and system. According to an embodiment, an imaging method comprises emitting neutrons into a material, wherein the material converts at least part of the emitted neutrons into a first plurality of gamma ray photons, and wherein at least part of the emitted neutrons pass through the material. Based on the neutrons passed through the material and the gamma ray photons, at least one property of the material can be deduced. An imaging method and an imaging system are provided.
G01V 5/10 - Prospection ou détection au moyen de rayonnement ionisant, p. ex. de la radioactivité naturelle ou provoquée spécialement adaptée au carottage en utilisant des sources de radiation nucléaire primaire ou des rayons X en utilisant des sources de neutrons
G01N 23/05 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux en utilisant des neutrons
A radiation sensor element (100) comprises a support plate (160), having a front face (161), extending substantially along a base plane (120), defining a lateral extension of the radiation sensor element (100); a substrate (110), having a basal face (111), an interconnection face (112) opposite the basal face (111), and an edge face (113) connecting the basal face (111) and the interconnection face (112); a sensor tile (130), having a back face (136) facing the interconnection face (112); a copper-pillar inter connection element (140) between the interconnection face (112) and the back face (136); and a non-conductive film (150) extending between the interconnection face (112) and the back face (136). The front face (161) comprises, laterally beyond the edge face (113), a depression (162) extending in a thickness direction perpendicular to the base plane (120), and the non-conductive film (150) comprises an edge protrusion part (151) ex tending in the depression (162).
A radiation sensor element (100) is provided. The radiation sensor element (100) comprises a read-out integrated circuit (110) having an interconnection face (111), a compound semiconductor layer (120) opposite the interconnection face (111), and a copper-pillar interconnection element(130) extending from the interconnection face (111) towards the compound semiconductor layer (120). The copper-pillar interconnection element (130) comprises a copper part (131) and an oxidation barrier layer (132), comprising a noble metal and arranged between the copper part (131) and the compound semiconductor layer (120).
According to an embodiment, a device comprises a direct conversion compound semiconductor layer configured to convert high energy radiation photons into an electric current, the direct conversion compound semiconductor layer comprising: a pixel array positioned in the direct conversion compound semiconductor layer, including pixels located at an outermost circumference, wherein the pixels comprise signal pads; a guard ring encircling the pixel array, wherein the pixels at the outermost circumference are closest to the guard ring; guard ring contact pads, wherein the guard ring contact pads are situated in place of some of the pixel signal pads at the outermost circumference and connected to the guard ring; wherein the guard ring contact pads are further situated asymmetrically with respect to a symmetry x-axis and a symmetry y-axis of the direct conversion compound semiconductor layer. Other embodiments relates to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0296 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI, p.ex. CdS, ZnS, HgCdTe
17.
Laser assisted solder bonding of direct conversion compound semiconductor detector
In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.
According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current. Other embodiments relate to a detector comprising an array of assemblies, and an imaging system comprising: an x-ray source and the detector.
According to an embodiment, a device comprises: a scintillator layer configured to convert x-ray or gamma ray photons into photons of visible light; a photodiode layer configured to convert visible light produced by the scintillator layer into an electric current; an integrated circuit, IC, layer situated below the photodiode layer and configured to receive and process the electric current; wherein electrical contacts of the IC layer are connected to electrical contacts of the photodiode layer using wire-bonding; and wherein the wire- bonding is covered with a protective material while bottom part of the IC layer is left at least partly exposed. Other embodiments relate to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.
In an embodiment, a method comprises:configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
According to an embodiment, a device (100) comprises a direct conversion compound semiconductor layer (101) configured to convert high energy radiation photons into an electric current, the direct conversion compound semiconductor layer comprising: a pixel array positioned in the direct conversion compound semiconductor layer, including pixels located at an outermost circumference, wherein the pixels comprise signal pads (106); a guard ring (105) encircling the pixel array, wherein the pixels at the outermost circumference are closest to the guard ring; guard ring contact pads (107), wherein the guard ring contact pads are situated in place of some of the pixel signal pads at the outermost circumference and connected to the guard ring; wherein the guard ring contact pads are further situated asymmetrically with respect to a symmetry x-axis and a symmetry y-axis of the direct conversion compound semiconductor layer. Other embodiments relates to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.
According to an embodiment, a device comprises: a direct conversion compound semiconductor layer configured to convert high energy radiation such as x-ray or gamma ray photons into an electric current; an integrated circuit, IC, layer situated next to, for example right below,the direct conversion compound semiconductor layer and configured to receive the electric current and process the electric current; and a substrate layer situated next to, for example right below,the IC layer configured to conduct heat emitted from the IC layer; wherein the substrate layer comprises concavities at corners of a cross section of the substrate; and wherein the substrate layer further comprises sliding electrical contacts between the corners, wherein the sliding electrical contacts are connected to the IC layer through the substrate layer to receive the processed electric current. Other embodiments relate to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.
According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray,radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray,radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current. Other embodiments relate to a detector comprising an array of assemblies, and an imaging system comprising: an x-ray source and the detector.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
In one example, an image data correction device is configured to an ionizing radiation detection device, wherein the ionizing radiation detection device is configured to detect ionizing radiation in a plurality of energy ranges transmitted through an object to which radiation is irradiated from a radiation source, the radiation detection device comprising: a first detector for detecting ionizing radiation in a first energy range that is transmitted through the object to generate first radiation image data; a second detector configured in parallel to the first detector with a predetermined region sandwiched between the first and the second detectors, for detecting ionizing radiation in a second energy range that is transmitted through the object to generate second radiation image data. The first and the second detectors are configured to receive the ionizing radiation concurrently so that the first and the second image data are generated concurrently. The image data correction device comprises; at least one processor, and at least one memory storing program instructions that, when executed by the at least one processor, cause the device to: digitally determine a correction value for the second radiation image data based on a width of the predetermined region. In other examples a method and a computer program product has been discussed along with the features of the image data correction device.
In one example, an image data correction device is configured to an ionizing radiation detection device, wherein the ionizing radiation detection device is configured to detect ionizing radiation in a plurality of energy ranges transmitted through an object to which radiation is irradiated from a radiation source, the radiation detection device comprising: a first detector for detecting ionizing radiation in a first energy range that is transmitted through the object to generate first radiation image data; a second detector configured in parallel to the first detector with a predetermined region sandwiched between the first and the second detectors, for detecting ionizing radiation in a second energy range that is transmitted through the object to generate second radiation image data. The first and the second detectors are configured to receive the ionizing radiation concurrently so that the first and the second image data are generated concurrently. The image data correction device comprises; at least one processor, and at least one memory storing program instructions that, when executed by the at least one processor, cause the device to: digitally determine a correction value for the second radiation image data based on a width of the predetermined region. In other examples a method and a computer program product has been discussed along with the features of the image data correction device.
There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.
There is disclosed an imaging system comprising: a first integrated circuit including a photodiode array comprising a plurality of integrating photodiode elements formed in an array of rows and columns, the integrated circuit providing a plurality of output signals corresponding to an output of each photodiode; and a second integrated circuit for receiving as inputs the plurality of output signals from the first integrated circuit and including a plurality of multiplexers corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output, wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines, the number of control lines corresponding to the number of rows in the array.
There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.
There is disclosed an imaging system comprising: a first integrated circuit (202) including a photodiode array comprising a plurality of integrating photodiode elements (204) formed in an array of rows and columns, the integrated circuit providing a plurality of output signals (212a, 212b, 212c, 212d) corresponding to an output of each photodiode (204); and a second' integrated circuit (220) for receiving as inputs the plurality of output signals from the first integrated circuit (202) and including a plurality of multiplexers (224a, 224b, 224c, 224d) corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output (222a, 222b, 222c, 222d), wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines (226a, 226b, 226c, 226d), the number of control lines corresponding to the number of rows in the array.
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
brevets
