An ion detection system for detecting incident ions including an ion-to-electron converter for converting incident ions to secondary electrons, an accelerating assembly including at least one of an electric field and a magnetic field for acceleration and transfer of the secondary electrons to a scintillator, the scintillator for converting the accelerated secondary electrons to an initial flux of photons, a photon channeling assembly including a first photon channel and a second photon channel, wherein the photon channeling assembly is configured for separating the initial flux of photons into at least a first photon flux channeled into the first photon channel and a second photon flux channeled into the second photon channel, and at least one photodetector for detecting at least one of a first optical signal generated at the first photon channel, and a second optical signal generated at the second photon channel.
An ion detection system comprising an upper plate configured for propagation of ions therethrough, a lower plate comprising a converter configured for converting ions impinging thereon to secondary electrons, a secondary electron multiplication assembly configured for receiving the secondary electrons and comprising at least one or optionally a series of oppositely facing pairs of dynodes, wherein in the optional series of oppositely facing pairs of dynodes, each pair is spaced apart from an adjacent pair, and wherein a first electric field is created in between the oppositely facing pair of dynodes. A magnetic system is provided for generating a magnetic field.
An in-vacuum light sensor system, including a light sensor assembly comprising a photocathode configured for converting an impinging photon to a photoelectron, a semiconductor diode configured for multiplying the photoelectron impinging thereon, and a housing including vacuum-compatible materials configured for being placed in a vacuum chamber. The housing is configured for housing the photocathode and the semiconductor diode and for propagation of the photoelectron from the photocathode to the semiconductor diode. An electrical biasing subassembly is configured for electrically biasing at least the photocathode and the semiconductor diode, and the vacuum chamber is configured for positioning the light sensor apparatus therein.
A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of λ1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of λ2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.
A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of λ1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of λ2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.
A magnetic photomultiplier tube (PMT) system, including a PMT. The PMT including a photocathode for converting an impinging photon to a photoelectron, an anode, and at least two or a series of oppositely facing pairs of dynodes, wherein each pair is spaced apart from an adjacent pair, a first electric field being generated intermediate at least one pair of oppositely facing dynodes and a second electric field generated intermediate at least one adjacent pairs of dynodes. The PMT system includes a magnetic field generated by a magnetic system, the PMT being positioned within the magnetic field.
An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface.
An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, comprising a scintillator including a scintillator layer, the scintillator layer emitting light signals corresponding to impingement of electrons thereupon, a light guide plate coupled to the scintillator layer and comprising a peripheral surface, and a single or plurality of silicon photomultiplier devices positioned upon the peripheral surface and arranged perpendicularly or obliquely relative to the scintillating surface, the silicon photomultiplier device being configured to yield an electrical signal from an electron impinging upon the scintillator layer.
A STEM system is disclosed wherein an imaging system is used to image the electron scatter pattern plane of the HAADF detector onto a two-dimensional array detector. A data acquisition system stores and processes the data from the two-dimensional array detector. For each illumination pixel of the STEM, one frame of data is generated and stored Each frame includes data of all scattered angles and can be analyzed in real time or in off-line at any time after the scan. A method is disclosed for detecting electrons emitted from a sample by detecting electrons scattered from the sample and generating plurality of corresponding signals, each signal indicative of scattering angle of a scattered electron; generating a plurality of signal groups, each signal group being a collection of signals of a user selected scattering angle.
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/244 - DétecteursComposants ou circuits associés
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
A STEM system is disclosed wherein an imaging system is used to image the electron scatter pattern plane of the HAADF detector onto a two-dimerisional array detector. A data acquisition system stores and processes the data from the two-dimensional array detector. For each illumination pixel of the STEM, one frame of data is generated and stored Each frame includes data of all scattered angles and can be analyzed in real time or in off-line at any time after the scan. A method is disclosed for detecting electrons emitted from a sample by detecting electrons scattered from the sample and generating plurality of corresponding signals, each signal indicative of scattering angle of a scattered electron; generating a plurality of signal groups, each signal group being a collection of signals of a user selected scattering angle.
G01N 21/31 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique
G01N 23/02 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
A system for selectively detecting charged particles produced due to operation of a charged particle beam column irradiating a specimen, including a proximal grid being selectively electrically biasable and configured for controllably directing the charged particles by electrically focusing the charged particles to compel selected secondary charged particles, whereupon being selected from the charged particles, to be attracted thereto, and to repel unselected secondary charged particles therefrom, a distal grid spaced apart from the proximal grid and separated therefrom by a gap and being selectively electrically biasable and configured for attracting the selected secondary and/or tertiary charged particles, whereupon being selected from the charged particles, to the distal grid, and to repel unselected tertiary charged particles therefrom, and a charged particle detector configured for detecting selected secondary charged particles attracted to the proximal and/or distal grid and detecting selected tertiary charged particles attracted to the distal grid, that impinge thereupon.
H01J 37/244 - DétecteursComposants ou circuits associés
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
12.
NANOTUBE-BASED ELECTRON EMISSION DEVICE AND METHOD FOR FABRICATION THEREOF
An electron emission device including a substrate, an intermediate layer overlaying the substrate and including a crater having an annular wall extending from an upper surface of the substrate along a central longitudinal axis of the crater, a catalyst film having a predetermined catalyst film diameter and disposed within the crater on the upper surface such that a catalyst central region of the catalyst film is substantially concentric to a central region of the crater along the central longitudinal axis, at least one nanotube is attached to the catalyst film at the catalyst central region and extending therefrom along the central longitudinal axis, and a gate layer overlaying the intermediate layer and including a central annular aperture having a predetermined gate layer aperture diameter formed over the crater for controlling the application of electric fields on the nanotube to control emission of electrons from the nanotube, wherein a ratio between the catalyst film diameter and the gate layer aperture diameter is in the range of 1/14 to 1/6.
A charged particle emitting assembly (100, 400) for use in a charged particle beam system, wherein the charged particle emitting assembly is configured to be integrated with a charged particle beam column (310) of the charged particle beam system, the charged particle emitting assembly including a charged particle emitting module (116) including a charged particle source (154) operative to emit charged particles, an electrode module (102, 410) comprising an apertured electrode (104, 422) having an electrode module aperture (170, 420) which is concentrically aligned with the charged particle source along a beam propagation axis, and an electrical interface module (200) configured and operative to enable mechanical connection and electrical communication of the charged particle emitting assembly with the charged particle beam column.
The invention discloses a charged particle detecting apparatus for detecting positive ions, negative ions and electrons emitted from a sample, the apparatus comprising a housing, defining a chamber in its interior, which is confined by conductive walls, and has an opening to the outside of said housing; a grid for selectively attracting charged particles, wherein the grid is electrically biasable with respect to said housing and functionally aligned with said opening; a converter arrangement with a converter surface, which is electrically biasable with respect to the grid and with respect to the housing, and which is positioned such that charged particles attracted into the chamber by the grid impact on the converter surface; an electron detector, which is biasable with respect to the converter surface in such a way that electrons emitted from the converter surface impact on the electron detector.
A charged particle detection device comprising an electric field generator configured and operable to create an electric field defining trajectories for charged particles of different types emitted from a sample as a result of the sample interaction with a particle beam, the emitted charged particles of different types being one of the following: electrons, positive ions and negative ions, an ion-to-electron converter having a conversion surface including a continuous interaction region oriented so as to intersect the trajectories of the charged particles of different types propagating from the sample, the conversion surface operative to emit electrons in response to the surface interaction with the charged particles of the different types, and an electron detector configured and operable to receive electrons from the converter and generate output data indicative thereof.
A multi-purpose efficient charge particle detector that by switching bias voltages measures either secondary ions, or secondary electrons (SE) from a sample, or secondary electrons that originate from back scattered electrons (SE3), is described. The basic version of the detector structure and two stripped down versions enable its use for the following detection combinations: The major version is for measuring secondary ions, or secondary electrons from the sample, or secondary electrons due to back-scattered electrons that hit parts other than the sample together or without secondary electrons from the sample. Measuring secondary ions or secondary electrons from the sample (no SE3). Measuring secondary electrons from the sample and/or secondary electrons resulting from back-scattered electrons hitting objects other than the sample (no ions).
brevets
