A delivery system for delivering a vaporized source precursor in ion implantation, including: an assembly including: a vessel having an interior volume and configured to produce the vaporized source precursor; a first heater to heat the vessel; and a manifold configured to control the output of the vaporized source precursor to an ion implantation device, wherein the assembly is configured to be disposed upstream of the source inlet flange.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
2.
HIGH PURITY MOLYBDENUM-CONTAINING PRECURSORS AND RELATED SYSTEMS AND METHODS
High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gasexposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique
This description relates to optical particle counters, methods of using optical particle counters, and methods of reducing particle count errors during use of an optical particle counter. The method includes a filter placed between the laser source and the flow cell. The filter may be placed at a non-normal angle relative to the laser.
G01N 15/00 - Recherche de caractéristiques de particules; Recherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
G01N 15/14 - Recherche par des moyens électro-optiques
Methods for the synthesis of stannous alkoxides. Some embodiments of the method include contacting a stannous halide with a metal alkoxide to form a stannous alkoxide. Some embodiments of the method include contacting a tin amide compound with an alcohol compound to form a stannous alkoxide. Some embodiments of the method include contacting a stannous halide with at least 3 equivalents of a metal alkoxide to form a tin compound. Some embodiments of the method include contacting a stannous halide with an alcohol compound and a co-reactant base to form a stannous alkoxide.
Methods for the synthesis of stannous alkoxides. Some embodiments of the method include contacting a stannous halide with a metal alkoxide to form a stannous alkoxide. Some embodiments of the method include contacting a tin amide compound with an alcohol compound to form a stannous alkoxide. Some embodiments of the method include contacting a stannous halide with at least 3 equivalents of a metal alkoxide to form a tin compound. Some embodiments of the method include contacting a stannous halide with an alcohol compound and a co-reactant base to form a stannous alkoxide.
A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
This description relates to optical particle counters, methods of using optical particle counters, and methods of reducing particle count errors during use of an optical particle counter. The method includes placing an optical isolator between the laser and the flow cell to allow laser light to pass into the flow cell, and to reduce the intensity of light re-directed back into the laser as optical feedback capable of causing mode hopping.
A substrate container includes a shell and a door for an opening of the shell. The shell includes one or more first latch sockets and one or more second latch sockets. The door includes a first locking mechanism that includes a first latch with first latch tip insertable into the one or more first latch sockets and a second latch with a second latch tip extendable into the second latch sockets. A width of the one or more first latch sockets blocks the second latch tip from being inserted into the one or more first latch sockets. A door for a substrate container includes a door housing and a first locking mechanism disposed in the door housing. A method of closing a substrate container includes inserting a door into an opening of the substrate container and adjusting a first locking mechanism of the door.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
9.
SELECTIVE RUTHENIUM DEPOSITION AND RELATED SYSTEMS AND METHODS
Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
C23C 16/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/52 - Commande ou régulation du processus de dépôt
This description relates to optical particle counters, methods of using optical particle counters, and methods of reducing particle count errors during use of an optical particle counter. The method includes a filter placed between the laser source and the fluid being measured. The filter may be placed at a non-normal angle relative to the laser.
G01N 15/00 - Recherche de caractéristiques de particules; Recherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
12.
SUBSTRATE CONTAINER, AND DOOR LOCKING MECHANISM THEREOF
A substrate container includes a shell and a door for an opening of the shell. The shell includes one or more first latch sockets and one or more second latch sockets. The door includes a first locking mechanism that includes a first latch with first latch tip insertable into the one or more first latch sockets and a second latch with a second latch tip extendable into the second latch sockets. A width of the one or more first latch sockets blocks the second latch tip from being inserted into the one or more first latch sockets. A door for a substrate container includes a door housing and a first locking mechanism disposed in the door housing. A method of closing a substrate container includes inserting a door into an opening of the substrate container and adjusting a first locking mechanism of the door.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
13.
GUIDED DIFFUSION DEVICE BRACKETS AND METHODS FOR DIFFUSION DEVICE RETENTION
Brackets are provided on an interior of a substrate container to receive and retain a diffusion device. The brackets include an receiver having a first internal cross-sectional area and a retention region having a second internal cross-sectional area, with the first internal cross-sectional area being larger than the second internal cross-sectional area. The bracket can include a second receiver on an opposite end of the bracket from the first receiver, such that the bracket can be inverted for use on either side of the substrate container. The brackets can receive diffusion devices when the diffusion devices are inserted from an exterior of the substrate container.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
This description relates to optical particle counters, methods of using optical particle counters, and methods of reducing particle count errors during use of an optical particle counter. The method includes placing an optical isolator between the laser and the flow cell to allow laser light to pass into the flow cell, and to reduce the intensity of light re-directed back into the laser as optical feedback capable of causing mode hopping.
Brackets are provided on an interior of a substrate container to receive and retain a diffusion device. The brackets include an receiver having a first internal cross-sectional area and a retention region having a second internal cross-sectional area, with the first internal cross-sectional area being larger than the second internal cross-sectional area. The bracket can include a second receiver on an opposite end of the bracket from the first receiver, such that the bracket can be inverted for use on either side of the substrate container. The brackets can receive diffusion devices when the diffusion devices are inserted from an exterior of the substrate container.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
16.
SELECTIVE RUTHENIUM DEPOSITION AND RELATED SYSTEMS AND METHODS
Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/14 - Dépôt d'un seul autre élément métallique
C23C 16/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 16/52 - Commande ou régulation du processus de dépôt
17.
CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERROELECTRIC MEMORIES
Provided are carbon-free (i.e., less than about 0.1 atomic percentage of carbon) Zr doped HfO2 films, where Zr can be up to the same level of Hf in terms of atomic percentage (i.e., 1% to 60%). The Zr doping can be achieved also by nanometer m laminated ZrO2 and HfO2 films useful in ferroelectric memories (FeRAM). The laminated films are comprised of about 5 to 10 layers of HfO2 and ZrO2 (i.e., alternating) films, each of which for example can be a thickness of about 1 to about 2 nm, wherein the laminated films are a total of about 5 to 10 nm in thickness.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
18.
FILTER ASSEMBLIES AND RELATED SYSTEMS AND RELATED METHODS
Filter assemblies are provided. A filter assembly comprises a retentive membrane. The retentive membrane has a bubble point of at least 40 psi as measured in hydrofluoroether using an air flow porosimeter at 22°C. A filter assembly comprises an ion exchange membrane. The ion exchange membrane has: A) a bubble point of less than 50 psi as measured in isopropyl alcohol using an air flow porosimeter at 22 °C; and/or B) a dye binding capacity of 2 μg/cm2to 100 μg/cm2as measured according to the Methylene Blue Dye Binding Testing Method. Related systems and related methods, among other things, are also provided.
B01D 15/36 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction ionique, p.ex. échange d'ions, paire d'ions, suppression d'ions ou exclusion d'ions
B01D 15/26 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
19.
HYDROPHILIC FILTER MEMBRANE WITH PENDANT HYDROPHILIC GROUPS, AND RELATED METHODS OF PREPARATION AND USE
Described are hydrophilic polymers (including in the form of a filter membranes that includes hydrophilic polymer) having pendant ionic groups; to methods of making the hydrophilic polymer with pendant ionic groups and derivative membranes and filters; and to method of using the filter membranes for filtering a fluid such as a liquid chemical to remove unwanted material from the fluid.
B01D 71/82 - Matériaux macromoléculaires non prévus spécifiquement dans un seul des groupes caractérisés par la présence de groupes déterminés, p.ex. introduits par un post-traitement chimique
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
A device may include an additive manufactured monolithic structure including an insulating body and at least one conductive region located in the insulating body. The additive manufactured monolithic structure does not include a bonding component between the insulating body and the at least one conductive element. The additive manufactured monolithic structure may further include at least one conduit that is free from any material. The insulating body may include a ceramic material and the at least one conductive region may include a metal material, such that the ceramic material and the metal material are co-deposited layer by layer to form the additive manufactured monolithic structure.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An ion implantation system and related methods are provided herein. An ion implantation system comprises a gas supply assembly comprising at least one gas supply vessel in fluid communication with an arc chamber. The gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from the at least one gas supply vessel to the arc chamber for implantation into a substrate, a beam current of Ge ions generated from the gas component is greater than a beam current of Ge ions generated from a control gas component.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
The disclosure describes a porous membrane including the following: at least one polymeric feature on a surface of a porous membrane wherein the at least one polymeric features are bonded to the membrane using a nanoscale injecting molding device. Another aspect of the disclosure includes a porous membrane including the following: a first film layer; a second film layer; at least one polymeric feature between the first film layer and second film layer, wherein the at least one polymeric feature is bonded to at least the first film layer.
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
B29C 64/112 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p.ex. dépôt d’un cordon continu de matériau visqueux utilisant des gouttelettes individuelles, p.ex. de buses de jet
Described are filter cartridges, filter apparatuses, and related methods that involve a filter cartridge that includes a cartridge support that includes centering surfaces, a helical strand, or both.
4422, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from the at least one gas supply vessel to the arc chamber for implantation into a substrate, a beam current of Ge ions generated from the gas component is greater than a beam current of Ge ions generated from a control gas component.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
Described are filter materials including a polyol ligand, such as n-methylglucamine, and/or a polyphosphonic acid ligand, which are highly effective for filtering metals or metal ions from fluids. The filter materials can be particularly useful to filter basic and acidic fluid compositions, such as those used for wet etching, removing photoresist, and cleaning steps in microelectronic device manufacturing.
B01D 71/82 - Matériaux macromoléculaires non prévus spécifiquement dans un seul des groupes caractérisés par la présence de groupes déterminés, p.ex. introduits par un post-traitement chimique
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
C02F 1/44 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par dialyse, osmose ou osmose inverse
C02F 103/34 - Nature de l'eau, des eaux résiduaires ou des eaux ou boues d'égout à traiter provenant de l'industrie chimique non prévue dans les groupes
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
H01L 21/306 - Traitement chimique ou électrique, p.ex. gravure électrolytique
26.
METHOD AND DEVICE TO DISTRIBUTE GAS INTO A CONTAINER
A method and purge flow distribution module for controlling flow of purge gas into a substrate container is provided. The purge flow distribution module includes a purge module comprising an inlet for receiving a flow of purge gas, a check valve for regulating a flow direction of the purge gas, and an outlet for supplying the purge gas, and a chamber surrounding at least an outlet of the purge module. The chamber includes a first opening for directing a first flow path to at least one rear gas distributing device for distributing a first portion of the purge gas in a rear portion of the substrate container and a second opening for a second flow path to at least one front gas distributing device for distributing a second portion of the purge gas to a front portion of the substrate container.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
27.
METHOD AND DEVICE TO DISTRIBUTE GAS INTO A CONTAINER
A method and purge flow distribution module for controlling flow of purge gas into a substrate container is provided. The purge flow distribution module includes a purge module comprising an inlet for receiving a flow of purge gas, a check valve for regulating a flow direction of the purge gas, and an outlet for supplying the purge gas, and a chamber surrounding at least an outlet of the purge module. The chamber includes a first opening for directing a first flow path to at least one rear gas distributing device for distributing a first portion of the purge gas in a rear portion of the substrate container and a second opening for a second flow path to at least one front gas distributing device for distributing a second portion of the purge gas to a front portion of the substrate container.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
28.
MULTISTAGE GAS SAMPLING TRAP AND DETECTION OF SULFUROUS SPECIES CONTAMINANT
A gas sampling trap includes a first stage and a second stage. The first stage includes a metal salt that reacts with sulfurous species to produce acidic gas. The second stage configured to receive the acidic gas produced in the first stage. An adsorbent substrate in the second stage adsorbs the acidic gas. A method of sampling a gas includes directing gas onto a metal stage within a first stage to produce acidic gas, directing the acidic gas into the second stage, and adsorbing the acidic gas in the second stage with an adsorbent substrate. A method of detecting a concentration of sulfurous species in a gas includes sampling the gas with a sampling trap, desorbing adsorbed acidic gas from an adsorbent substrate of the sampling trap with a solvent, and testing the solvent with ion chromatography.
Provided are certain activated carbonaceous materials which have been treated with dilute mineral acids to modify their surface chemistry and morphology. The modified activated carbonaceous materials of the disclosure are useful in removing certain contaminants from gaseous streams. In one embodiment, the contaminants are compounds containing silicon and oxygen moieties, such as alkyl silanols and alkyl siloxanes. The modified activated carbonaceous materials can be incorporated into filters and filter systems.
B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
B01D 53/02 - SÉPARATION Épuration chimique ou biologique des gaz résiduaires, p.ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p.ex. chromatographie préparatoire en phase gazeuse
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
Multi-nuclear tin compounds and related methods are provided. A method comprises obtaining a mono-substituted tin (IV) amide compound; obtaining a silanol compound; and contacting the mono-substituted tin (IV) amide compound with the silanol compound to form a multi-nuclear tin compound. A composition comprises a multi-nuclear tin compound.
The disclosure is directed to removal of metal contaminants from fluids, as well as ligand-modified filter materials useful for carrying out such methods. The filters and methods of this disclosure are particularly effective for removal of metals from liquid compositions comprising amines. Such liquid compositions with significantly reduced amounts of metals can be used in a microelectronic manufacturing process, such as liquids for removing photoresist or liquids used in etching. The ligand-modified filters, such as ligand-modified porous membranes, can be configured for use in a microelectronic manufacturing system, which can be utilized in the system as a point of use metal-removal feature for liquids entering the system.
Multi-nuclear tin compounds and related methods are provided. A method comprises obtaining a mono-substituted tin (IV) amide compound; obtaining a silanol compound; and contacting the mono-substituted tin (IV) amide compound with the silanol compound to form a multi-nuclear tin compound. A composition comprises a multi-nuclear tin compound.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
33.
POROUS SINTERED METAL BODIES AND METHODS OF PREPARING POROUS SINTERED METAL BODIES
B29C 64/153 - Procédés de fabrication additive n’utilisant que des matériaux solides utilisant des couches de poudre avec jonction sélective, p.ex. par frittage ou fusion laser sélectif
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B22F 7/02 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de couches successives
B29C 64/268 - Agencements pour irradiation par faisceaux d’électrons [FE]
Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.
Described are coatings that contain of fluorinated yttrium oxide and a metal oxide; methods of preparing these coatings; substrates, surfaces, equipment, and components of equipment that include a coating that contains a combination of fluorinated yttrium oxide and a metal oxide; and methods of preparing and using the coatings and coated substrates.
C04B 35/515 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes
C04B 35/553 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de fluorures
C04B 35/622 - Procédés de mise en forme; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
Solutions for selective removal of polymer chains from layers of block copolymers and related methods are provided. A layer of a block copolymer comprises a plurality of polymer domains, each of the polymer domains comprise a first region and a second region. The first region comprises first polymer chains. The second region comprises second polymer chains. The solution is configured to remove a greater proportion of the second polymer chains than the first polymer chains, sufficient to increase or rectify at least one dimension of the plurality of polymer domains.
Solutions for selective removal of polymer chains from layers of block copolymers and related methods are provided. A layer of a block copolymer comprises a plurality of polymer domains, each of the polymer domains comprise a first region and a second region. The first region comprises first polymer chains. The second region comprises second polymer chains. The solution is configured to remove a greater proportion of the second polymer chains than the first polymer chains, sufficient to increase or rectify at least one dimension of the plurality of polymer domains.
C08F 297/02 - Composés macromoléculaires obtenus en polymérisant successivement des systèmes différents de monomère utilisant un catalyseur de type ionique ou du type de coordination sans désactivation du polymère intermédiaire utilisant un catalyseur du type anionique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
Articles and methods relating to coatings having superior chemical resistance and structural integrity, can be prepared via atomic layer deposition and fluoro-annealing at low process temperatures of between about 150° C. and less than 300° C. The film comprises a fluorinated metal oxide containing yttrium.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
06 - Métaux communs et minerais; objets en métal
07 - Machines et machines-outils
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
16 - Papier, carton et produits en ces matières
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
20 - Meubles et produits décoratifs
21 - Ustensiles, récipients, matériaux pour le ménage; verre; porcelaine; faience
22 - Cordes; filets; tentes, auvents, voiles et sacs; matières de rembourrage
35 - Publicité; Affaires commerciales
37 - Services de construction; extraction minière; installation et réparation
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Adsorbed gas for use in the manufacture of semi-conductors
and microelectronic products, as provided in a gas supply
container holding adsorbent material; absorbing carbons for
general industrial use; chemical compositions for use in
removing microelectronics manufacturing fabrication
materials from microelectronic products such as wafers and
microelectronic devices that are recycled following the
removal of such materials; chemical gases sold with gas
supply equipment for storing gases and dispensing such gases
on demand, namely, chemical gases sold in a metal vessel
holding the gas in a pressurized or liquid form, with a
pressure regulator within said vessel and a flow control
valve for on-demand dispensing of such gas for use in
semiconductor manufacturing; chemical products, namely,
chemical compositions for use in vapor deposition processes;
chemical compositions, namely, reagents for use in the
manufacture of semiconductors in the electronics and
semiconductor manufacturing industry; chemical compositions,
namely, reagents, namely, epitaxial thin film materials,
organometallic source reagent compounds and complexes, and
ion implantation materials, all for use in the electronics
and semiconductor manufacturing industry; chemical source
material in the nature of chemical compositions for
depositing films on substrates in the manufacture of
semiconductors, flat panel displays, and solar panels;
chemical source material in the nature of chemical
compositions for the deposition of thin films on
semiconductor wafers for the manufacture of semiconductors;
chemicals for treating hazardous gases in semiconductor
applications; chemicals for use in chemical reagent delivery
systems for use in the manufacture of semiconductors;
chemicals for use in manufacture of semiconductors,
integrated circuits, flat-panel displays, solar panels, and
photovoltaic products; chemicals for vapor deposition
metallization; composite materials, namely, composites
comprised of polymers and carbon nanotubes for use in the
further manufacture of molded articles; gas provided in a
gas supply container holding adsorbent material for use in
the manufacture of semiconductors and for use in other
industrial processes; gases for use in the manufacture
semiconductors, microelectronics, solar panels, and flat
panel displays, as provided in gas supply vessels and for
on-demand dispensing of such gas for use in such
manufacturing; processing gases for use in the manufacture
of semiconductors, flat panel displays, compact discs and
recording media; chemical compositions, namely,
semiconductor manufacturing chemical reagents;
sub-atmospheric pressure gas sources, namely, gases adsorbed
on adsorbents in gas supply containers for use in the
manufacture of semiconductors, microelectronics, solar
panels and flat panel displays; sub-atmospheric pressure gas
storage and dispensing systems for gases for manufacturing
semiconductors, solar panels, and flat panel displays,
comprised of adsorbents with gases for manufacturing
semiconductors, solar panels, and flat panel displays
adsorbed thereon, not including natural gas or natural gas
dehydration or purification machines (term considered too
vague by the International Bureau pursuant to Rule 13 (2)
(b) of the Regulations); sub-atmospheric pressure gas,
namely, gases for manufacturing semiconductors, solar
panels, and flat panel displays, not including natural gas;
sub-atmospheric pressure gases for ion implantation and
chemical vapor deposition; chemical slurries for use in the
manufacture of advanced integrated circuit devices within
the semi-conductor industry; chemical solutions for use in
the manufacturing and processing of semiconductors, namely,
photoresist stripper, benzotriazole (bta) and l-proline
solution; fumed silica dispensed in water used to polish
semiconductors; aqueous metal oxide dispersions for use in
semiconductor polishing; chemical additives, namely,
abrasive dispersions for use in the manufacture of
electronic components and substrates, optical components,
metals, machinery, computer parts, and magnetic data-storage
disks and heads; high purity chemical compositions for
electronic component manufacture; chemical compositions for
use in semiconductor manufacturing, solar cell panel
manufacturing and flat panel display manufacturing; chemical
compositions for removal of photoresist and post-etch
residues in the manufacture of semiconductors, integrated
circuits and related products; chemicals for use in industry
and science; chemical preparations for use in industry and
science, namely, for use in the semiconductor and
micro-electronics industries; chemical mechanical polishing
(cmp) slurry and chemical mechanical planarization (cmp)
slurry for use in the manufacturing and processing of
semiconductors in the optoelectronics and photonics
industries; chemicals, namely, polymer-containing drag
reducers and flow improvers to increase flow of hydrocarbons
through pipelines. Industrial abrasives, namely, abrasive compounds for lapping
and polishing semiconductors, silicon wafers, glass and
metal surfaces; chemical cleaner directed to the electronics
industry; post-copper chemical mechanical planarization
(cmp) cleaning solution for use in the manufacturing and
processing of semiconductors; chemical cleaning solution for
processing of integrated circuit (ic) in the
opto-electronics and photonics industries; post-ash cleaning
solution for use in the manufacturing and processing of
semiconductors; abrasive preparations, namely, chemical
cleaners, namely, abrasive dispersion slurries and cleaning
and polishing preparations for use in the finishing of
electronic components and substrates, optical components,
glass, metals, plastics, machinery, computer parts, magnetic
data-storage disks and heads; chemical slurries for
polishing semiconductors, silicon wafers, glass, metals,
plastics, machinery, electronic components and substrates,
optical components, computer parts, magnetic data-storage
disks and heads for use in the semiconductor, electronic,
rigid disk and magnetic head industries. Carriers, made primarily of metal, used in the manufacture,
storage and transport of semiconductor wafers; clamps made
primarily or exclusively of metal for securing together
plastic fittings, tubing supports and plastic valves used
for plastic tubing and pipe; gas supply equipment for
storing gases and dispensing such gases on demand, namely, a
metal vessel holding the gas in a pressurized or liquid
form, with a flow control valve and regulator, for on-demand
dispensing of such gas; manually operated, metal inlet and
outlet valves; manually operated, metal manifolds for
transferring chemicals; metal chemical delivery cabinets for
housing metal containers, valves, manifolds and pipes of
metal; metal containers with inlet and outlet valves, for
storage and delivery of chemicals; metal gas supply
containers holding adsorbent material for use in storing
adsorbed gas and from which gas can be desorbed for
dispensing from the container; metal gas vessels holding
gases for manufacturing semiconductors, solar panels, and
flat panel displays; metal manifolds for use in chemical
delivery systems for transferring chemicals; metal supports
and hangers for plastic tubing and pipe for carrying fluids
including gasses, liquids and slurries; pipes and tubes of
metal for transferring chemicals; sub-atmospheric pressure
gas storage and dispensing systems for gases for
manufacturing semiconductors, solar panels, and flat panel
displays, comprised of empty metal gas supply containers
used for holding adsorbents with gases for manufacturing
semiconductors, solar panels, and flat panel displays
adsorbed thereon; sub-atmospheric pressure storage and
dispensing systems for industrial gases, comprised of metal
gas supply containers holding adsorbents with industrial
gases adsorbed thereon. Work piece holder used to retain wafers in semiconductor
manufacturing tools; chemical processing machines;
chemical-mechanical planarization pad conditioners;
dispensing pumps for fluids in the microelectronics
industry; electric welding machines for welding plastic
tubing and fittings and machines for primarily washing, and
secondarily drying semiconductor and magnetic disk carriers,
boxes and shipping containers; filters for machines for
manufacturing microelectronics, and for filtration of water
and liquid chemicals; filters for semiconductor
manufacturing machines and machine systems used for removing
contaminants, particulate matter, particles, impurities,
molecular contaminants; gas filters and purifiers for
semiconductor manufacturing tools; gas filters, namely,
filters for machines having traps for obtaining a sample of
a gas-phase contaminant from a gas, gas filtering systems
comprising gas filters for machines and housings and
fittings therefore, and sampling devices for obtaining a
sample of a gas contaminant from a gas for use in connection
with industrial installations, semiconductor processing
systems, and semiconductor processing tools used in the
manufacture of semiconductors; high viscosity fluid
dispensing systems comprised of pumps, filters and related
electronics for use in the microelectronics industry;
housing for disposable liquid filter cartridges for use in
the microelectronics industry (term considered too vague by
the International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); industrial machinery and parts therefore,
namely, integrated filtration-liquid chemical dispense
systems comprising pumps, filters and related electronics
for low and high viscosity fluids including photochemicals,
dielectrics, slurries, polyimides and epoxies; industrial
machinery and parts therefore, namely, filter manifolds;
re-usable filter housings for machines; gas, vacuum and
liquid valves, namely, motor controlled gas, vacuum and
liquid valve machines; liquid filtration and purification
subsystems composed of filters and housings to remove
undesirable particles, gels and other contaminants from wet
chemicals in semiconductor manufacturing applications;
machine parts for semiconductor machinery, namely, brush
rollers for removing detritus from polished surfaces of
silicon wafers after planarization; machines and machine
parts, namely, devices for removing contaminants from gas,
namely, gas filters, gas filtering systems and gas
monitoring systems being parts of machines for use in
connection with the gas industry, semiconductor processing
systems, and semiconductor processing tools; machines for
manufacturing embossed carrier tape and cover tape; machines
for packaging semiconductor components in embossed carrier
tape and cover tape; non-abrasive polishing pads for
chemical-mechanical planarizing or chemical mechanical
polishing (cmp) machines for use in the manufacture of
semiconductor wafers, integrated circuits, hard disk drives
and chipsets; polishing pads for polishing machines for use
in the manufacture of semiconductor wafers, integrated
circuits, hard disk drives and chipsets; polishing pads for
use in the manufacture of advanced integrated circuit
devices within the semiconductor industry. Controllers in the nature of analog and digital mass flow
controllers for industrial gases; vapor controllers;
articles used in laboratories, in the pharmaceutical,
biotechnology, food, and chemical processing industries, and
in industrial manufacturing plants, namely, carriers for
semiconductor wafers and substrates and handles therefor,
storage boxes and covers for semiconductor wafers and
substrates, shipping container and handling trays for
semiconductor wafers, substrates, and photoplates (term
considered too vague by the International Bureau pursuant to
Rule 13 (2) (b) of the Regulations); automated gas flow
controllers and gas flow monitors; automatic valve
assemblies (term considered too vague by the International
Bureau pursuant to Rule 13 (2) (b) of the Regulations);
bioprocessing systems primarily comprised of mixing
hardware, plastic or synthetic bioreactor containers for
cell culturing of bioprocess materials and structural parts
thereof in the nature of supports and mounting assemblies
specially adapted for these containers for manufacturing or
laboratory use (term considered too vague by the
International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); carriers, made primarily of plastic, used in
the manufacture, storage, and transport of devices, namely,
semiconductor wafers, flat panel displays and flat panel
display screens (term considered too vague by the
International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); chemical refill and delivery systems in the
nature of fluid flow circuitry joined to chemical storage
containers for semiconductor manufacturing (term considered
too vague by the International Bureau pursuant to Rule 13
(2) (b) of the Regulations); chemical resistant sensors,
probes and connecting cables, detection apparatus for the
presence or absence of fluids in processing environments;
chip trays for circuit chips being processed during
manufacture and use; computer hardware and software for
simulation, benchmarking and assessment of other software,
all for use in facilitating the development of software for
integrated circuits, integrated circuitry core architecture,
and electronic systems and subsystems; computer software for
the design, testing, fabrication, or control of gas
filtering apparatus and instruments, gas sampling devices,
gas monitoring apparatus and instruments, and gas control
apparatus and instruments; controllers for dispense pumps,
for use in the microelectronics manufacturing industry;
controllers for measuring gas mass flow; copper anodes used
to plate semiconductors; dispense pump controllers; electric
or electronic optically-based sensors for monitoring and
controlling concentrations of liquid chemicals used in
semiconductor manufacturing; filters for laboratory use;
flow meters; fluid dispensing systems allowing for the
communication of filter information to the pump, comprised
of electronic controls, dispensing pumps and associated
filters, sold as a unit, for use in the microelectronics
industry; gas flow controllers and gas flow monitors;
graphical user interface software; gas pressure gauges; gas
pressure switches; gas pressure transducers; laboratory
equipment, namely, graduated measuring containers, breakers,
liquid storing pans, vacuum probes, gauge protectors and
solenoid valves; liquid crystal display screens; measurement
instruments for the semiconductor, flat panel, lithium ion
battery, and pharmaceutical industries, namely, pressure
transducers, pressure sensors, pressure transmitters, flow
controllers, flow meters, level transducers, level sensors,
level transmitters, temperature transducers, temperature
sensors and temperature transmitters; electric or
electronic, differential pressure or optically-based
chemical and fluid monitoring and measurement sensors,
namely, concentration monitors, concentration analyzers,
concentration sensors, pressure transducers, pressure
sensors, pressure transmitters, flow controllers, flow
meters, level transducers, level sensors, level
transmitters, temperature transducers, temperature sensors,
temperature transmitters, density correctors, viscosity
meters, viscosity analyzers, valves, manifolds and
regulators, with graphical user interface software for
monitoring, blending and controlling concentrations of
liquid chemicals used in semiconductor, pharmaceutical,
water treatment, lithium ion battery flat panel display and
chemical manufacturing applications; microprocessor-based
pressure control units; non-destructive analyzers for
semiconductor materials and semiconductor manufacturing
processes; plastic boxes, carriers and trays for
transferring, shipping and storing memory disks; probes
which detect, measure the presence of, and permit the
dispensing of liquid chemicals, sold as components of
bag-in-bottle container systems for dispensing liquid
chemicals, all for commercial and industrial uses; pump
controllers for high viscosity fluid dispensing systems for
use in the microelectronics industry; sensors for measuring
chemical levels; radio frequency identification system
comprised of readers, tags and software for identifying and
tracking liquid chemical containers and dispensers; readout
boxes for flow measurement; recovery systems, namely,
ultrasonic devices for use in breaking up and removing
select particulates from slurries; reticle carriers, namely,
boxes for securing reticles for semiconductor manufacturing,
reticle carrier stockers, namely, storage systems for
reticle carriers, bare reticle stockers, namely, storage
systems for reticles, reticle carrier side scanner racks,
namely, purge systems for reticle carriers, reticle carrier
libraries, namely, systems for storing small quantities of
reticle carriers in semiconductor process tools; scientific
and laboratory ware made of plastic; semiconductor wafer,
chip and photoplate identifying materials, namely, clip-on
identification tags and identification tags for trays,
carrier holding trays, photoplate carriers, adjustable
carriers, carriers for magnetic storage disks, storage boxes
and covers and shipping containers for magnetic storage
disks; sensors and analyzers for semiconductor manufacturing
process monitoring; static protective material handling
products, namely, wafer carriers, storage boxes, mask
packages and chip trays specifically designed for use with
electronic parts; sub-atmospheric pressure storage and
dispensing systems for industrial gases, comprised of gas
supply containers holding adsorbents with industrial gases
adsorbed theron (term considered too vague by the
International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); subatmospheric pressure storage and dispensing
systems for industrial gases in the nature of fluid flow
circuitry joined to chemical storage containers for
semiconductor manufacturing (term considered too vague by
the International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); trays for holding electronic components;
wafers and epitaxial thin films sold as a component of
micro-electronic substrates (term considered too vague by
the International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); electronic capacitance-type sensors;
electronic control modules for controlling fluids, namely,
liquid chemicals; electronic leak well adaptor; electronic
proximity adaptor detecting presence of liquid or solid
target; electronic sensor probe and cable assembly;
electronic tank level adaptor; electronic tube ring adaptor
detecting presence or absence of conductive media in a tube. Apparatus, namely, gas filtering systems, comprised of
reservoirs, pumps, filters, cleaners, degassers, extractors,
scrubbers, strippers; polymeric and metallic membranes and
cartridges for filtering or purifying liquids and associated
manifolds; polymeric and metallic membranes and cartridges
for filtering or purifying gases; metallic and organic media
and cartridges for filtering or purifying liquids, gas
filters, gas monitoring systems comprised of manifolds,
valves, regulators, flow controllers, and piping systems,
and gas control systems comprised of valves, regulators,
flow controllers, and piping systems for use in the gas,
semiconductor, electronics, photolithography, integrated
circuit, and integrated optical systems industries, and
parts, fittings and components for the aforesaid goods;
devices for removing metallic ion contaminants from liquid
process streams used to manufacture semiconductors, namely,
purifiers for removing metallic ion contaminants and
combination purifier/filters for removing metallic ion and
particulate contaminants; filter system composed of a water,
chemical or slurry filtration cartridge and distribution
manifold for industrial use, namely, in the filtration and
purification of chemicals, water and slurries; filtering
units for filtration of particulate matter from water and
liquid chemicals, for use in manufacturing semiconductors;
filters and purifiers for removing particulate and molecular
contaminants from air for industrial use; filters for
liquids in the microelectronics industry; filters for
removing large particulate matter; filters for slurries for
use in the microelectronics industry; filters and purifiers
for industrial applications for the filtration and
purification of photochemical solvent; filters for
filtration of liquid process chemicals, for industrial use;
fluid filters and associated manifolds for use in connecting
and disconnecting the filters and the filter housing, used
in the microelectronics industry; fluid filtration units for
industrial use, and parts therefor; gas and liquid membrane
contactors for purifying, concentrating, and degassing
liquids; gas and liquid purification or filtration,
contacting and delivery equipment and technology for
commercial and industrial use, namely, gas and liquid
purification and delivery systems comprising, reservoirs,
pumps, filters, cleaners, degassers, extractors, scrubbers,
strippers; gas diffusers for use with process chambers; gas
diffusers; gas filters and purifiers for industrial
installations; gas purifier and delivery systems, namely,
gas manifolds, valves, regulators, flow controllers, and
piping systems; heat exchangers for high purity fluids;
industrial gas purification units; liquid chemical filter
cartridge manifold for industrial use, namely, for use with
pumps for any liquid-chemical carrying pipe or tube; liquid
filters for use in the semiconductor industry; metallic and
organic media and cartridges for filtering or purifying
liquids and gases including air; polymeric and metallic
membranes and cartridges for filtering or purifying gases;
polymeric and metallic membranes and cartridges for
filtering or purifying liquids and associated manifolds;
purifiers and filters for removing contaminants from
slurries; purge gas purifiers, purge gas filters, air
filters for removing chemical and molecular contaminants,
air filters for removing particulate contaminants, air and
gas purifiers for use in reticle carriers, air and gas
purifiers for use in reticle carrier related articles,
namely, stockers, side scanner racks and libraries, air and
gas filters for use in reticle carriers, air and gas filters
for use in reticle carrier accessories, namely, storage
systems and purge systems; purification products and parts
therefore, namely, polymeric membranes and cartridges for
filtering/purifying liquids; purification unit for removal
of dissolved contaminants from gases for use in the
semi-conductor industry; purifiers and filters for removing
contaminants from slurries; ultrapure water purification
units for use in the microelectronics industry; water
filters for ultra-pure water systems; water filters for use
in microelectronics manufacturing. Plastic and synthetic bags for material containment and
transfer, which may be used by attaching the bags to clamps
and connectors on various items. Adhesive tape for industrial and commercial use, namely,
embossed carrier tape, cover tape, and reels for packaging
semiconductor components during shipping and storage; fluid
dispensing devices, namely, plastic fluid dispense heads,
for attachment to a drum to dispense fluid chemicals, all
for use in the semiconductor manufacturing industry; plastic
tubes, pipes and pipe fittings; plastic coupling with
threaded coupling nut and split ring keeper for plastic
tubing; plastic fitting for attachment to plastic tubing for
use in laboratories and industrial installations requiring
chemical resistance to and purity of conveyed liquids;
plastic in bars, blocks, pellets, rods, and sheets for
further manufacture for general industrial use,
manufacturing, molding and general industrial use; plastic
pipes for transporting or delivering natural gas, plastic
plumbing fitting for attachment to plastic tubing; plastic
tubing and plastic pipe for carrying fluids including
gasses, liquids and slurries; plastic tubing for use in
laboratory and industrial use; rod stock and billets formed
of fluoropolymer plastics for general industrial use. Carriers, containers, and storage boxes made primarily of
plastic, and parts therefor, for the manufacture, storage,
processing, transport, and protection of disks used for
computer hard drives, substrates, silicon wafers,
semiconductor wafers, electronic components, masks and
memory disks; non-metal clamps for securing together plastic
fittings, tubing supports and plastic valves used for
plastic tubing and pipe; non-metallic containers for
chemical fluids and fluid dispensers connectable to such
containers for use therewith to dispense chemical fluids
from such containers all for industrial use; plastic
containers for liquid chemicals and dispensers for use
therewith all for commercial use; plastic drums, barrels and
containers for commercial use; plastic plug valves, being
other than machine parts, for chemical sampling and process
monitoring; plastic fasteners, namely, screws, nuts, and
bolts; manually operated plastic valves, plastic barrels for
storing and dispensing chemicals, plastic liners for barrels
for storing and dispensing chemicals, plastic spring
operated check valves, and plastic pneumatically operated
valves; plastic valves being other than machine parts;
plastic valves for use in semiconductor processing
operations and pharmaceutical manufacturing operations and
plastic manifolds for mounting plastic valves; polymer
containers for packaging memory disk substrates and silicon
wafers; polymer containers for packaging silicon wafers. Plastic spray nozzles. Plastic and synthetic bags for containment, transfer and/or
mixing of medical, pharmaceutical, biopharmaceutical or
bioprocessing materials (term considered too vague by the
International Bureau pursuant to Rule 13 (2) (b) of the
Regulations). Computerized on-line ordering services featuring fluid
purification and control products directed to manufacturers
of integrated circuits, semiconductors, microelectronics
components, flat panel displays, fiber optic cables and
components, optical memory devices and solar cells, and to
manufacturers of tools used by such manufacturers; retail
store services featuring extended warranties for equipment
used in the manufacture of semiconductor and
micro-electronic devices; business consulting services
relating to the distribution of semiconductors and
microelectronic devices. Repair and rebuilding services for dispense systems, flow
controllers, pressure sensors, and vacuum valves and
controllers in the field of semiconductors. Polymeric and non-polymeric coating services that provide
additional chemical, electrical, and/or protective
characteristics to a part or substrate, namely, applying
carbon based polymeric coatings and ceramic, inorganic, and
metallic non-polymeric coatings for use as purifiers or
filters, for use in high temperature applications in
aerospace and defense industries, for use to create highly
polished surfaces in the aerospace industry, for use in
minimizing contaminants or providing desired electrical
conductivity in the semiconductor, flat panel and
microelectronics industries; polymeric and non-polymeric
coating services that provide additional chemical,
electrical, and/or protective characteristics to a part or
substrate, namely, membranes and metals for use as purifiers
or filters, for use in high temperature applications in
aerospace and defense industries, for use to create highly
polished surfaces in the aerospace industry, for use in
minimizing contaminants or providing desired electrical
conductivity in the semiconductor, flat panel and
microelectronics industries; custom manufacturing of wafers
and coatings sold as a component of electrical/electronic
substrates, for use in manufacturing. Engineering and technical consultation in the field of
semiconductor, microelectronics and flat panel display (term
considered too vague by the International Bureau pursuant to
Rule 13 (2) (b) of the Regulations); and manufacturing and
process improvement in the field of contamination
identification, measurement, and control (term considered
too vague by the International Bureau pursuant to Rule 13
(2) (b) of the Regulations); scientific and technical
consulting and research services in the field of reticle
carrier work environments in a semiconductor manufacturing
facility, namely, contamination monitoring and control,
process reaction, and process improvement (term considered
too vague by the International Bureau pursuant to Rule 13
(2) (b) of the Regulations); technical consultation and
support services in the nature of troubleshooting by
providing engineering design and product information in the
field of advanced materials and chemical precursors and
products thereof, namely, thin film materials,
organometallic source reagent compounds, chemical vapor
deposition equipment, and chemical reagent delivery systems
for chemical vapor deposition, semiconductor and chemical
reagents, in the field of computer hardware and software for
the development of software for integrated circuits,
integrated circuits, integrated circuitry core architecture,
electronic systems and subsystems, encoded integrated
circuit cards and smart cards, equipment and software for
the non-destructive analysis of materials, equipment and
software for monitoring fluids and fluid streams to
determine the presence, characteristics and concentration of
specific parts therefore, analytical monitoring and process
control equipment, and piezoelectric chemical analysis
equipment (term considered too vague by the International
Bureau pursuant to Rule 13 (2) (b) of the Regulations);
technical consultation in the fields of transportation,
processing, storage, and packaging of semiconductor wafers
and electronic components (term considered too vague by the
International Bureau pursuant to Rule 13 (2) (b) of the
Regulations); technical consultation in the fields of the
use, cleaning, and recycling of carriers and containers for
semiconductor wafers and electronic components (term
considered too vague by the International Bureau pursuant to
Rule 13 (2) (b) of the Regulations).
Vaporizer vessels include one or more reagent support panels, serving as dividers of interior space of the vessel, in a vertical orientation such as when filling the vaporizer vessels, and when rotated into a horizontal orientation, the panels support the vaporizable solid materials placed in one or more chambers formed by the panels and interior walls of the vessels and enable transfer of heat to those solid materials. The chambers are such that any or all chambers filled with the vaporizable solid materials provide a void space to allow the solid materials to vaporize and for gas to move through the vaporizer vessels when heated, to allow effective vaporization of the solid materials and further allow the vapor resulting from the solid materials to move to an outlet of the vessels where it can be provided as part of a process.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques
Spacers for filtration membranes that are formed from perforated films. The spacer include unperforated regions, which can serve as integrated lamination strips, advantageously omitting the need for separate lamination steps required with woven and nonwoven spacer fabrics while also providing a spacer with a uniform thickness.
A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.
Process carriers include slots defined by teeth. The slots are each configured to receive a substrate, and each of the slots has slot angle in a range from 47° to 76°. The teeth can extend half or less of a height of the process carrier. The teeth can be configured to be spaced apart by at least a thickness of the disk or wafer to be received in the slots. The teeth can be configured such that when the substrate is seated in one of the plurality of slots, a center of the substrate is positioned towards a tooth end of the process carrier with respect to a height direction of the first side wall and the second side wall.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
44.
MONO-SUBSTITUTED TIN COMPOUNDS AND RELATED METHODS
A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.
Process carriers include slots defined by teeth. The slots are each configured to receive a substrate, and each of the slots has slot angle in a range from 47° to 76°. The teeth can extend half or less of a height of the process carrier. The teeth can be configured to be spaced apart by at least a thickness of the disk or wafer to be received in the slots. The teeth can be configured such that when the substrate is seated in one of the plurality of slots, a center of the substrate is positioned towards a tooth end of the process carrier with respect to a height direction of the first side wall and the second side wall.
Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Disclosed herein is a filter having a housing having first and second end surfaces and interior and exterior surfaces, a membrane disposed within the tubular housing, a first end cap sealed to the first end surface of the tubular housing and the first end surface of the membrane; a second end cap sealed to the second end surface of the tubular housing and the second end surface of the membrane; and a fluid channel formed in the interior surface of the housing in a helical pattern. The helical pattern has a helical pitch in an axial direction of the housing of less than or equal to about 60 mm.
Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.
C01B 33/027 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice
Described are ion-exchange membranes that include a porous polymeric membrane and imidazole ion-exchange groups at surfaces of the membrane; ion-exchange membranes and filters that contain the ion-exchange membranes; and methods of using the ion-exchange membranes and filters for separating charged biological molecule from a liquid.
B01J 47/014 - Procédés d'échange d'ions en général; Appareillage à cet effet dans lesquels les propriétés d’adsorption de l’échangeur d’ions sont utilisées, p.ex. récupération de protéines ou de composés macromoléculaires
B01D 39/16 - Autres substances filtrantes autoportantes en substance organique, p.ex. fibres synthétiques
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01J 47/12 - Procédés d'échange d'ions en général; Appareillage à cet effet caractérisés par l'emploi d'une substance échangeur d'ions sous forme de rubans, de filaments, de fibres ou de feuilles, p.ex. sous forme de membranes
C08F 255/02 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'hydrocarbures tels que définis dans le groupe sur des polymères d'oléfines contenant deux ou trois atomes de carbone
Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Reticle pods include inner pods where motion limiting features restrict translational motion of the cover and the baseplate relative to one another. The motion limiting features are in addition to gross alignment features included in the inner pod. The motion limiting features resist the translational motion before the gross alignment features would resist the motion. Motion limiting features can include elastic bodies providing friction against contact surfaces, or pins received on elastic contact surfaces or in diaphragms or motion limiting cups.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
G03F 1/66 - Réceptacles spécialement adaptés aux masques, aux masques vierges ou aux pellicules; Leur préparation
Described are liquid filter apparatuses that include a housing, an interior within the housing, a cartridge assembly (otherwise known as a “filter cartridge”) contained within the housing, and a vent that allows gaseous fluid from an interior of the housing to be released to an exterior of the housing, as well as related methods.
B01D 29/11 - Filtres à éléments filtrants stationnaires pendant la filtration, p.ex. filtres à aspiration ou à pression, non couverts par les groupes ; Leurs éléments filtrants avec des éléments filtrants en forme de sac, de cage, de tuyau, de tube, de manchon ou analogue
B01D 29/96 - Filtres à éléments filtrants stationnaires pendant la filtration, p.ex. filtres à aspiration ou à pression, non couverts par les groupes ; Leurs éléments filtrants dans lesquels les éléments filtrants sont déplacés entre les opérations de filtration; Dispositions particulières pour enlever ou remplacer les éléments filtrants; Systèmes de transport pour filtres
Described are techniques and equipment (apparatus) for processing an electrostatic chuck at controlled process conditions, including, as an example, for processing an electrostatic chuck during a step of curing an adhesive that forms a bond between two layers of the electrostatic chuck.
B32B 41/00 - Dispositions pour le contrôle ou la commande des procédés de stratification; Dispositions de sécurité
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 15/20 - Produits stratifiés composés essentiellement de métal comportant de l'aluminium ou du cuivre
B32B 37/08 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par le procédé de refroidissement
B32B 37/12 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
54.
COMPOSITE HOLLOW FIBER AND RELATED METHODS AND PRODUCTS
Described are composite hollow fibers filter membranes that include a porous polymeric hollow fiber support and a filter layer; methods of making the composite hollow fibers and using the composite hollow fibers as a filter membrane; methods of making a filter component or filter from the composite hollow fiber, and filter components and filters that contain the composite hollow fibers as filter membranes.
Described are support devices that are useful with substrate containers used to hold or transport substrates in a clean environment, as well as associated systems and methods of using the support devices and substrate containers. A substrate container support system comprises a base having a horizontal base surface; a nozzle extending vertically from the base surface, the nozzle being capable of vertical movement relative to the base surface; a pressure sensor adapted to sense fluid pressure of fluid passing through the nozzle; and a control system comprising a hardware processor and a memory, the control system configured to adjust a vertical position of the nozzle based on the fluid pressure.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
56.
SUBSTRATE CONTAINER SYSTEMS AND METHODS OF PURGING A SUBSTRATE CONTAINER
Described are support devices that are useful with substrate containers used to hold or transport substrates in a clean environment, as well as associated systems and methods of using the support devices and substrate containers.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
Described are filtration membranes that include a porous fluoropolymer membrane and thermally stable ionic groups; filters and filter components that include these filtration membranes; methods of making the filtration membranes, filters, and filter components; and method of using a filtration membrane, filter component, or filter to remove unwanted material from fluid.
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
The present disclosure includes a method of forming a polished surface. Forming the polished surface can include grinding an initial ceramic substrate to form a ground ceramic substrate; infiltrating the ground ceramic substrate with silicon; and polishing the silicon-infiltrated ceramic substrate, thereby forming the polished surface.
C04B 41/50 - Revêtement ou imprégnation avec des substances inorganiques
C04B 35/565 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbures à base de carbure de silicium
C04B 38/00 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation
C04B 41/53 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiques; Traitement de la pierre naturelle impliquant l'enlèvement d'une partie des matières de l'objet traité
59.
CHEMICAL-MECHANICAL POLISHING COMPOSITION AND CHEMICAL-MECHANICAL POLISHING METHOD USING THE SAME
The chemical-mechanical polishing composition of the present invention is for polishing a substrate and contains an abrasive, a hydroxyethyl cellulose having a weight average molecular weight of 200,000 or less, a basic component, a surfactant, and an aqueous carrier.
Spacers for filtration applications are provided. A spacer for a filtration device comprises a substrate comprising a cyclic polyolefin. The substrate comprises a plurality of through-holes for filtering particles having an average particle size of greater than 50 μm. Filtration assemblies, filtration devices, and related systems and methods are also provided.
B01D 65/00 - Accessoires ou opérations auxiliaires, en général, pour les procédés ou les appareils de séparation utilisant des membranes semi-perméables
A device includes a housing including a first chamber having a first pressure regulating device, a first fluid inlet, and a first fluid outlet. The first pressure regulating device includes a plurality of first levers; a first spring; and a first pressure activated device. In response to an external pressure decreasing, the first pressure activated device overcomes a first closing force and opens the first fluid inlet. A second chamber has a second pressure regulating device including a second fluid inlet and a second fluid outlet; a plurality of second levers; a second spring; and a second pressure activated device configured to constrict as the external pressure increases. In response to the external pressure decreasing, the second pressure activated device is configured to overcome a second closing force and open the second fluid inlet.
This disclosure reports embodiments of a fluid filter for ESD mitigation having a conductive polymer sleeve. Embodiments of this filter may include a conductive sleeve and tie bands to mitigate electrostatic discharge.
B01D 35/31 - Structure du carter de filtre comprenant des dispositions pour la protection de l'environnement, p.ex. dispositifs résistant à la pression
B01D 29/11 - Filtres à éléments filtrants stationnaires pendant la filtration, p.ex. filtres à aspiration ou à pression, non couverts par les groupes ; Leurs éléments filtrants avec des éléments filtrants en forme de sac, de cage, de tuyau, de tube, de manchon ou analogue
H01B 1/12 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques substances organiques
Wet etch compositions and related methods are provided herein. A wet etch composition for molybdenum, may include phosphoric acid, acetic acid, nitric acid, and an additive for reducing an oxidation rate of a MoOx layer. The additive may be present in an amount of 0.01% to 5% by weight based on a total weight of the wet etch composition.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C23F 1/26 - Compositions acides pour les métaux réfractaires
Yttrium complexes and related methods are provided. A method for preparing a yttrium complex comprises contacting a metal alkylcyclopentadienyl compound and a yttrium trihalide compound in a non-coordinating solvent, so as to obtain a tris(alkylcyclopentadienyl)yttrium complex. A composition comprises a tris(alkylcyclopentadienyl)yttrium complex.
Spacers for filtration applications are provided. A spacer for a filtration device comprises a substrate comprising a cyclic polyolefin. The substrate comprises a plurality of through-holes for filtering particles having an average particle size of greater than 50 μm. Filtration assemblies, filtration devices, and related systems and methods are also provided.
D03D 15/283 - Tissus caractérisés par la matière, la structure ou les propriétés des fibres, des filaments, des filés, des fils ou des autres éléments utilisés en chaîne ou en trame caractérisés par la matière des fibres ou des filaments formant les filés ou les fils à base de polymères synthétiques, p.ex. fibres polyamides ou fibres polyesters
Precursors and related methods are provided. A precursor comprises a cyclosilazane compound. The cyclosilazane compound is a reaction product of an aminosilane and a halosilane. A method for forming the precursor comprises obtaining an aminosilane, obtaining a halosilane, and contacting the aminosilane and the halosilane to obtain the precursor. A method for forming a silicon-containing film using the precursor is also provided, among other embodiments.
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
Described are porous polymeric filter membranes made using poly(etheretherketone)-type polymers (PEEK), devices that include the PEEK membrane, and related methods of preparing and using the PEEK membranes.
A system for polishing a hardmask comprises a composition comprising a permanganate ion of a permanganate oxidizer; a substrate comprising a hardmask that comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to bring the composition and the substrate into contact so as to remove at least a portion of the hardmask of the substrate.
Precursors and related methods are provided. A precursor comprises a cyclosilazane compound. The cyclosilazane compound is a reaction product of an aminosilane and a halosilane. A method for forming the precursor comprises obtaining an aminosilane, obtaining a halosilane, and contacting the aminosilane and the halosilane to obtain the precursor. A method for forming a silicon-containing film using the precursor is also provided, among other embodiments.
Described are porous membrane products that contain two or more membrane layers bonded together at a portion of the area of the membranes, methods and system for preparing the porous membrane products, and methods of using the porous membrane products.
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
A device includes a housing including a first chamber having a first pressure regulating device, a first fluid inlet, and a first fluid outlet. The first pressure regulating device includes a plurality of first levers; a first spring; and a first pressure activated device. In response to an external pressure decreasing, the first pressure activated device overcomes a first closing force and opens the first fluid inlet. A second chamber has a second pressure regulating device including a second fluid inlet and a second fluid outlet; a plurality of second levers; a second spring; and a second pressure activated device configured to constrict as the external pressure increases. In response to the external pressure decreasing, the second pressure activated device is configured to overcome a second closing force and open the second fluid inlet.
A system for polishing a hardmask comprises a composition comprising a permanganate ion of a permanganate oxidizer; a substrate comprising a hardmask that comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to bring the composition and the substrate into contact so as to remove at least a portion of the hardmask of the substrate.
B24B 37/04 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
Described are porous membrane products that contain two or more membrane layers bonded together at a portion of the area of the membranes, methods and system for preparing the porous membrane products, and methods of using the porous membrane products.
Described are adsorbent materials that are useful to remove airborne molecular contamination from a stream of gas, and that include a porous adsorbent base having potassium hydroxide ion and potassium carbonate applied to surfaces of the adsorbent base, as well as devices that include the adsorbent and related methods of preparing and using the adsorbent.
B01J 20/04 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des composés des métaux alcalins, des métaux alcalino-terreux ou du magnésium
B01D 53/14 - SÉPARATION Épuration chimique ou biologique des gaz résiduaires, p.ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par absorption
B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
Described are porous polymeric filter membranes made using poly(etheretherketone)-type polymers (PEEK), devices that include the PEEK membrane, and related methods of preparing and using the PEEK membranes.
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
Described are adsorbent materials that are useful to remove airborne molecular contamination from a stream of gas, and that include a porous adsorbent base having potassium hydroxide ion and potassium carbonate applied to surfaces of the adsorbent base, as well as devices that include the adsorbent and related methods of preparing and using the adsorbent.
B01J 20/04 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des composés des métaux alcalins, des métaux alcalino-terreux ou du magnésium
B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
Yttrium complexes and related methods are provided. A method for preparing a yttrium complex comprises contacting a metal alkylcyclopentadienyl compound and a yttrium trihalide compound in a non-coordinating solvent, so as to obtain a tris(alkylcyclopentadienyl)yttrium complex. A composition comprises a tris(alkylcyclopentadienyl)yttrium complex.
Some embodiments relate to additive manufactured articles having coated surfaces and related methods. The methods may comprise forming a three-dimensional (3D) article by additive manufacturing to obtain an additive manufactured 3D article having a monolithic structure that is not capable of construction by machining, and exposing the additive manufactured 3D article to one or more precursor gases to form a coating layer on a surface of the additive manufactured 3D article. The additive manufactured articles may comprise an additive manufactured three-dimensional (3D) body. The additive manufactured 3D body may have a monolithic structure that is not capable of construction by machining. The additive manufactured 3D body may have a coating layer on a surface of the additive manufactured 3D body.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
Described are high pressure filter apparatuses that include first and second pieces having a welded seam along a circumference of the body, and a sleeve placed around and surrounding the welded seam.
B01D 29/11 - Filtres à éléments filtrants stationnaires pendant la filtration, p.ex. filtres à aspiration ou à pression, non couverts par les groupes ; Leurs éléments filtrants avec des éléments filtrants en forme de sac, de cage, de tuyau, de tube, de manchon ou analogue
B01D 29/33 - Eléments filtrants autoportants agencés pour la filtration à courant dirigé vers l'intérieur
B01D 46/00 - Filtres ou procédés spécialement modifiés pour la séparation de particules dispersées dans des gaz ou des vapeurs
B01D 46/24 - Séparateurs de particules utilisant des corps filtrants creux et rigides, p.ex. appareils de précipitation de poussières
C22B 9/02 - Affinage par liquation, filtration, centrifugation, distillation ou action d'ultrasons
83.
HIGH PRESSURE FILTER APPARATUS AND RELATED METHODS
Described are high pressure filter housings and apparatuses that are useful to contain a fluid under high pressure, with example housings including first and second pieces having complimentary tapered joint surfaces that can form a fluid-tight seal without a gasket located between the surfaces, and methods of making and using the high pressure filter apparatuses.
A filter housing includes a sleeve, a first endcap coupled to a first open end of the sleeve, and a second endcap coupled to the second open end of the sleeve. The sleeve includes an interior volume with an outer radial portion and an inner radial portion. The first endcap includes first plurality of ports that connect to the outer radial portion and the inner radial portion of the interior volume of the sleeve. The second endcap includes a second plurality of ports that connect to the outer radial portion and the inner radial portion of the interior volume of the sleeve. The filter housing is configured to enclose a filter member in the sleeve between the first endcap and the second endcap. A method is for filtering liquid with a filter that includes a filter member and a filter housing.
The disclosure provides a process for preparing solid tri(C1-C4 alkyl)ammonium dihydrogen phosphates such as triethylammonium dihydrogen phosphate, in high yield, and in a free-flowing particulate form. The solid product advantageously possesses less than about 1500 ppm of aprotic organic solvents, less than about 1500 ppm of C1-C5 alkanols, and less than about 500 ppm of water, as determined by Karl Fischer titration.
C07C 209/68 - Préparation de composés contenant des groupes amino liés à un squelette carboné à partir d'amines, par des réactions n'impliquant pas de groupes amino, p.ex. réduction d'amines non saturées, aromatisation ou substitution du squelette carboné
86.
HYDROPHOBIC MEMBRANES AND MEMBRANE DISTILLATION METHODS
Described are methods of membrane distillation for processing organic liquids, hydrophobic distillation membranes useful for membrane distillation methods, and methods of preparing the hydrophobic distillation membranes.
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétés; Procédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
Described are wafer containers adapted to store or transport semiconductor wafers in a clean environment, including containers that include a purge gas delivery device, as well as methods for purging the environment within the container.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
Described are wafer containers adapted to store or transport semiconductor wafers in a clean environment, including containers that include a purge gas delivery device, as well as methods for purging the environment within the container. In one aspect, the invention relates to a diffuser that includes: an elongate body comprising an upper end, a lower end, a front wall, a rear wall, sidewalls, a height between the upper end and the lower end, a width between the sidewalls, and a channel; a diffuser inlet that allows flow of gas into the channel; a diffuser outlet that comprises one or more openings in the front wall, the sidewalls, or both; non-porous channel surfaces comprising a non-porous rear wall surface and non-porous sidewall surfaces; and a flow control structure within the channel that directs flow of gas along a length of the channel between the diffuser inlet and the diffuser outlet.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl5 vapor in the second vessel to separate the MoCl5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl5 precursor.
Described are processes and equipment that are useful to remove hydrogen peroxide from a gas, for example from a hospital room as a step of sterilizing the room using hydrogen peroxide, or from a flow of exhaust air that is produced by sterilization equipment that uses hydrogen peroxide as a sterilizing agent.
A61L 2/20 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des substances chimiques des substances gazeuses, p.ex. des vapeurs
A24B 15/18 - Traitement du tabac ou des succédanés du tabac
A61L 2/00 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet
B01D 53/46 - Elimination des composants de structure définie
B01J 20/04 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des composés des métaux alcalins, des métaux alcalino-terreux ou du magnésium
B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
C23C 16/22 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt de matériaux inorganiques, autres que des matériaux métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
93.
BAG AND BAG FITMENT INCLUDING RIGID FLUOROPOLYMER SPIKE PORT
A fitment for a bag includes an integrally formed spike port, the spike port including an aperture, a puncture barrier film and an internal gasket. The fitment can be a fluoropolymer. The puncture barrier can be a fluoropolymer film. The internal gasket is positioned within the aperture and provides an additional puncture barrier to the spike port. The fitment can be incorporated into a bag by joining two sheets such as fluoropolymer sheets to one another and to the fitment around a perimeter of the sheets. The bag can be used in processes including exposure to or holding at cryogenic temperatures.
Described are processes and equipment that are useful to remove hydrogen peroxide from a gas, for example from a hospital room as a step of sterilizing the room using hydrogen peroxide, or from a flow of exhaust air that is produced by sterilization equipment that uses hydrogen peroxide as a sterilizing agent.
B01D 53/02 - SÉPARATION Épuration chimique ou biologique des gaz résiduaires, p.ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p.ex. chromatographie préparatoire en phase gazeuse
A61L 2/20 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des substances chimiques des substances gazeuses, p.ex. des vapeurs
A61L 2/22 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des substances chimiques des substances à phases, p.ex. des fumées, des aérosols
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
07 - Machines et machines-outils
09 - Appareils et instruments scientifiques et électriques
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
Produits et services
(1) Graphite and ceramic materials for use in the manufacture of components in the electronic industry; graphite for industrial purposes; natural graphite, semi-finished graphite, and artificial graphite for use in manufactures; natural graphite, semi-finished graphite, and artificial graphite for use in forming other materials; tubes made from graphite for industrial purposes; graphite plates for industrial purposes; graphite rolls for industrial purposes.
(2) Glass manufacturing machines and their component parts; graphite molds manufacturing machines and their component parts; graphite foam manufacturing machines and their component parts; polymeric material manufacturing machines and their component parts; plastics forming machines; plastics manufacturing machines; parts of machines, namely, graphite tubes; parts of machines, namely, graphite injector tubes; parts of machines, namely, graphite plates; machine parts, namely, graphite trays for semiconductor wafer production machines; machine parts, namely, graphite molds.
(3) Graphite electrodes; graphite tubes as parts of atomic absorption spectrometers for use in atomic spectroscopy; graphite sheaths for electric components; graphite sheaths in tube form for electric and electronic components; graphite plates for use with fuel cell electrodes; protective graphite plates for electric and electronic components; graphite rolls for use with fuel cell electrodes; graphite trays for use with fuel cell electrodes; graphite molds for use with fuel cell electrodes.
(4) Raphite foam used as a heat exchanger having preferential directionality of heat transfer between opposing surfaces; graphite sheets for insulating; graphite packing for substrates in the semiconductor industry; sealing and insulating materials, namely, graphite sheaths in tube form; sealing and insulating materials, namely, graphite plates; sealing and insulating materials, namely, graphite sheets in the form of rolls.
96.
FUNCTIONALIZED ORGANOTIN PRECURSORS AND RELATED METHODS
Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
97.
BAG AND BAG FITMENT INCLUDING RIGID FLUOROPOLYMER SPIKE PORT
A fitment for a bag includes an integrally formed spike port, the spike port including an aperture, a puncture barrier film and an internal gasket. The fitment can be a fluoropolymer. The puncture barrier can be a fluoropolymer film. The internal gasket is positioned within the aperture and provides an additional puncture barrier to the spike port. The fitment can be incorporated into a bag by joining two sheets such as fluoropolymer sheets to one another and to the fitment around a perimeter of the sheets. The bag can be used in processes including exposure to or holding at cryogenic temperatures.
Methods for selective deposition of precursor materials and related devices are provided. The methods comprise obtaining a structure. The structure comprises a nondielectric material, and a dielectric material. The methods comprise contacting the structure with a molybdenum precursor under conditions, so as to obtain a molybdenum material on at least a portion of the non-dielectric material. The molybdenum material is not deposited on the dielectric material under the conditions.
C23C 16/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
An apparatus includes a distillation container configured to receive a mixture. The apparatus includes a column fluidly connected to the distillation container. A mesh is disposed in the column. The apparatus includes a plurality of conduits fluidly connected to respective vacuums. A fractionating head is fluidly connected to the column. The column is fluidly connected between the distillation container and the fractionating head.
