Compositions are provided. A composition comprises a phosphoric acid component. A composition comprises an acetic acid component. A composition comprises a nitric acid component. A composition comprises a solvent. The solvent is present in an amount sufficient for the composition to have a viscosity of 5 cP to 100 cP as measured according to ASTM D445. Related methods are provided, among other things.
A reticle carrier and a method of supporting a reticle are provided. The reticle carrier comprises a reticle carrier door configured to support either of two reticles having different dimensions, the reticle carrier door including: a door upper surface; and reticle supports mounted on the door upper surface, wherein the reticle supports comprise a first support configuration including at least three reticle supports configured to support a first-dimensioned reticle above the door upper surface, and a second support configuration including at least three reticle supports configured to support a second-dimensioned reticle above the door upper surface.
Compositions are provided. A composition comprises a phosphoric acid component. A composition comprises an acetic acid component. A composition comprises a nitric acid component. A composition comprises a solvent. The solvent is present in an amount sufficient for the composition to have a viscosity of 5 cP to 100 cP as measured according to ASTM D445. Related methods are provided, among other things.
Described are systems, apparatus, and methods for moving a reticle from a first space at atmospheric pressure to a second space at vacuum pressure, the systems including a vacuum load port that includes a vacuum chamber between the first space and the second space; example methods include using a vacuum-compatible door that is capable of being held under vacuum in the vacuum chamber interior.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Described are systems and methods useful for removing contaminants from a gas mixture that contains two noble gases and carbon tetrafluoride as a contaminant, the gas mixture being, for example, exhaust gas from an excimer laser.
B01D 53/04 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse avec adsorbants fixes
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
Solvent-based compositions for post-etch residue removal and related methods are provided. The composition comprises a first amine halide component. The composition comprises a second amine halide component. The composition comprises a hydrogen halide component. The composition comprises an organic solvent. The organic solvent comprises a cyclic compound having at least one electron-withdrawing substituent. The organic solvent does not comprise at least one of N-methyl-2-pyrrolidone, dimethylacetamide, or any combination thereof. The first amine halide component, the second amine halide component, the hydrogen halide component, and the organic solvent are present in an amount sufficient for the composition to remove a substance at an etch rate of at least 50 Angstroms/min.
Precursors and methods for depositing metal-containing films are provided herein. The method includes obtaining a substrate comprising a plurality of halides. The method includes obtaining a reducing agent. The method includes contacting the substrate with the reducing agent to remove at least a portion of the plurality of halides. Related compositions and articles are also provided.
C23C 16/14 - Dépôt d'un seul autre élément métallique
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
8.
PRECURSORS AND METHODS FOR DEPOSITING METAL-CONTAINING FILMS
Precursors and methods for depositing metal-containing films are provided herein. The method includes obtaining a substrate comprising a plurality of halides. The method includes obtaining a reducing agent. The method includes contacting the substrate with the reducing agent to remove at least a portion of the plurality of halides. Related compositions and articles are also provided.
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
9.
SOLVENT-BASED COMPOSITIONS FOR POST-ETCH RESIDUE REMOVAL AND RELATED METHODS
Solvent-based compositions for post-etch residue removal and related methods are provided. The composition comprises a first amine halide component. The composition comprises a second amine halide component. The composition comprises a hydrogen halide component. The composition comprises an organic solvent. The organic solvent comprises a cyclic compound having at least one electron-withdrawing substituent. The organic solvent does not comprise at least one of N-methyl-2-pyrrolidone, dimethylacetamide, or any combination thereof. The first amine halide component, the second amine halide component, the hydrogen halide component, and the organic solvent are present in an amount sufficient for the composition to remove a substance at an etch rate of at least 50 Angstroms/min.
Pretreatment compositions for selectively etching silicon germanium are provided. The pretreatment compositions may comprise a water, an acid component, an inhibitor, and 1% to 20% by weight of a silane coupling agent based on a total weight of the pretreatment composition. When a substrate comprising a silicon component and a silicon germanium component are contacted with the pretreatment composition and subsequently contacted with an etchant composition, the etchant composition exhibits a selectivity of the silicon germanium component to the silicon component of at least 30. Related kits and related methods are also provided.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
A process carrier is provided that includes an enclosure, two item support structures, and a backstop attachment structure. The enclosure includes a top wall, a bottom wall, left and right side walls, a back wall, and a door frame opposite the back wall. The door frame defines a front opening. The two item support structures include a left item support structure located along the left side wall and a right item support structure located along the right side wall. Each of the two item support structures includes a plurality of vertically spaced shelves for supporting one or more semiconductor device items within the enclosure. The left item support structure has a first support column and the right item support structure has a second support column. The backstop attachment structure is removably attached around at least one of the first and second support columns.
Described are porous membranes useful in filters that are effective to selectively remove fine particles and large particles from a slurry that contains abrasive particles having a range of particle sizes, the porous membranes including polydopamine; also described are methods of using the porous membrane or a filter that contains the porous membrane to selectively remove large and fine particles from a slurry, for example a CMP slurry.
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
B01D 71/72 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone, non prévus dans un seul des groupes
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétésProcédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
13.
ETCHANT PRETREATMENT SOLUTIONS AND RELATED METHODS
Pretreatment compositions for selectively etching silicon germanium are provided. The pretreatment compositions may comprise a water, an acid component, an inhibitor, and 1% to 20% by weight of a silane coupling agent based on a total weight of the pretreatment composition. When a substrate comprising a silicon component and a silicon germanium component are contacted with the pretreatment composition and subsequently contacted with an etchant composition, the etchant composition exhibits a selectivity of the silicon germanium component to the silicon component of at least 30. Related kits and related methods are also provided.
A front opening container includes an enclosure, a door removably attachable to the enclosure, a retainer, and a retainer spacer. The enclosure includes slots and the retainer is configured to provide front surfaces for the slots when the door is closed. In a first configuration, the retainer is removably attached to the door by the retainer spacer such that the slots have a first size. In a second configuration, the retainer is removably attached to the door without the retainer spacer such that the slots have a second size larger than the first size. A door retainer assembly includes a retainer and a retainer spacer. A method of adapting a front opening container includes removably attaching the retainer to a retainer spacer, removably attaching the retainer spacer to the inside of the door, and closing the front opening in the enclosure with the door.
B65D 81/05 - Réceptacles, éléments d'emballage ou paquets pour contenus présentant des problèmes particuliers de stockage ou de transport ou adaptés pour servir à d'autres fins que l'emballage après avoir été vidés de leur contenu spécialement adaptés pour protéger leur contenu des dommages mécaniques maintenant le contenu en position éloignée des parois de l'emballage ou des autres pièces du contenu
B65D 51/26 - Fermetures non prévues ailleurs combinées avec dispositifs auxiliaires pour des buts autres que la fermeture avec des moyens pour maintenir en place le contenu, p. ex. avec des moyens élastiques
B65D 25/10 - Dispositifs pour placer les objets dans les réceptacles
B65D 85/48 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour objets particulièrement sensibles aux dommages par chocs ou compression pour feuilles en verre
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier and anionic silica particles dispersed in the liquid carrier, wherein the anionic silica particles have an aspect ratio of less than about 1.3, a surface area in a range from about 40 m2/g to about 80 m2/g, and a zeta potential in a range from about −10 mV to about −40 mV in the polishing composition.
A calibration apparatus and method for calibrating an airborne molecular contamination (AMC) measurement equipment. The calibration apparatus includes a shell, and a calibration gas delivery system. The shell includes a bottom wall configured to connect to a load port of the AMC measurement equipment. The calibration gas delivery system is disposed within the shell and connected to a calibration gas outlet port for delivering the calibration gas to the AMC measurement equipment. The calibration gas outlet port is provided on the shell of the calibration apparatus and through the bottom wall such that the calibration apparatus is configured to deliver the calibration gas to the AMC measurement equipment.
Systems for controlled precursor delivery to a plurality of deposition chambers and related methods are provided. The system comprises a control valve. The control valve is configured to control a flow of a carrier gas from a carrier gas source to a precursor vessel containing a precursor. The system comprises a pressure sensor. The pressure sensor is configured to measure a pressure of a vapor comprising at least one of the carrier gas, the precursor, or any combination thereof. The system comprises a controller. The controller communicates with the control valve and the pressure sensor. The controller is configured to adjust the control valve based on the pressure measured by the at least one pressure sensor, such that, when the vapor is delivered to the plurality of deposition chambers at different flow rates, a concentration of the carrier gas and the precursor is substantially constant.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
18.
SYSTEMS FOR CONTROLLED PRECURSOR DELIVERY TO A PLURALITY OF DEPOSITION CHAMBERS AND RELATED METHODS
Systems for controlled precursor delivery to a plurality of deposition chambers and related methods are provided. The system comprises a control valve. The control valve is configured to control a flow of a carrier gas from a carrier gas source to a precursor vessel containing a precursor. The system comprises a pressure sensor. The pressure sensor is configured to measure a pressure of a vapor comprising at least one of the carrier gas, the precursor, or any combination thereof. The system comprises a controller. The controller communicates with the control valve and the pressure sensor. The controller is configured to adjust the control valve based on the pressure measured by the at least one pressure sensor, such that, when the vapor is delivered to the plurality of deposition chambers at different flow rates, a concentration of the carrier gas and the precursor is substantially constant.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
19.
COMPOUNDS AND PROCESSES FOR EXTREME ULTRAVIOLET LITHOGRAPHY
The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY (République de Corée)
Inventeur(s)
Lee, Sunghae
Park, Jin-Seong
Lee, Chi Hoon
Bae, Ji-Su
Abrégé
xyy film (where x>0 and y>0) includes performing one or more cycles of an atomic layer deposition process. Each of the one or more cycles includes performing a first process and a second process. The first process includes supplying a first precursor containing magnesium to a substrate, and supplying a first reactant to the substrate such that the first reactant reacts with the first precursor to form a first intermediate layer on the substrate. The second process includes supplying a second precursor containing indium to the substrate, and supplying a second reactant to the substrate such that the second reactant reacts with the second precursor to form a second intermediate layer on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
High purity precursor compositions and related methods are provided herein. The method includes obtaining a first reactant and a second reactant. The method includes contacting the first reactant and the second reactant to form a reaction product. The reaction product has a purity of at least 90% as determined by a thermogravimetric analysis (TGA) residue at 400 °C. The reaction product can be used as a deposition precursor.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C07F 11/00 - Composés contenant des éléments des groupes 6 ou 16 du tableau périodique
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
22.
METHOD OF MANUFACTURING MAGNESIUM INDIUM OXIDE THIN FILMS
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY (République de Corée)
Inventeur(s)
Lee, Sunghae
Park, Jin-Seong
Lee, Chi Hoon
Bae, Ji-Su
Abrégé
A method of manufacturing a MgInxOy film (where x>0 and y>0) includes performing one or more cycles of an atomic layer deposition process. Each of the one or more cycles includes performing a first process and a second process. The first process includes supplying a first precursor containing magnesium to a substrate, and supplying a first reactant to the substrate such that the first reactant reacts with the first precursor to form a first intermediate layer on the substrate. The second process includes supplying a second precursor containing indium to the substrate, and supplying a second reactant to the substrate such that the second reactant reacts with the second precursor to form a second intermediate layer on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
High purity precursor compositions and related methods are provided herein. The method includes obtaining a first reactant and a second reactant. The method includes contacting the first reactant and the second reactant to form a reaction product. The reaction product has a purity of at least 90% as determined by a thermogravimetric analysis (TGA) residue at 400° C. The reaction product can be used as a deposition precursor.
A storage vessel to contain reagent material. The storage vessel includes a vessel with a bottom, a top, an outlet at the top, sidewalls extending from the bottom to the top, a valve at the outlet, and an interior defined by the bottom, the top, and the sidewalls, the interior including a volume, and an extension tube having a first end engaged with the valve and a second end located toward a center of the interior volume from the first end such that, regardless of orientation of the vessel, the second end is above at least 25 percent of a volume of the interior volume.
Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
A cassette hold down includes a frame and a plurality of contact arms that extend from the frame. The contact arms include a first contact arm and a second contact arm that extend in different directions from the frame. Each of the contact arms includes a fixed end affixed to the frame, a free end opposite to the fixed end, a cassette contact that extends from the free end in a first vertical direction, and a cassette contact that extends from the free end in a second vertical direction. A wafer container includes a pod, a door configured to close an open end of the pod, a wafer cassette, and a cassette hold down. In the assembled wafer container, a cassette contact of each contact arm of the frame abuts the wafer cassette in the wafer container.
Described are pads and methods used in chemical-mechanical polishing (also referred to as chemical-mechanical planarization) of microelectronic substrates, the pads having a polishing surface that includes rigid sections and compliant sections.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
A cassette hold down includes a frame and a plurality of contact arms that extend from the frame. The contact arms include a first contact arm and a second contact arm that extend in different directions from the frame. Each of the contact arms includes a fixed end affixed to the frame, a free end opposite to the fixed end, a cassette contact that extends from the free end in a first vertical direction, and a cassette contact that extends from the free end in a second vertical direction. A wafer container includes a pod, a door configured to close an open end of the pod, a wafer cassette, and a cassette hold down. In the assembled wafer container, a cassette contact of each contact arm of the frame abuts the wafer cassette in the wafer container.
Optimizing purge flow parameters in a substrate container, includes streaming a purge working fluid into an interior of the substrate container, discharging the purge working fluid from the interior of the substrate container, and varying purge flow parameters of the purge working fluid for a predetermined period of time, detecting at least one environmental condition in the interior of the substrate container during the predetermined period of time, determining optimized purge flow parameters based on the varied purge flow parameters and the at least one detected environmental condition during the predetermined period of time, and adjusting the streaming and the discharging in accordance with the optimized purge flow parameters. The substrate container may include, for example, a front opening unified pod or a reticle pod.
Described are pads for chemical-mechanical polishing having a central area that is adapted to control pad temperature at the central area by controlling the amount of friction between the pad and a wafer substrate at the central area during chemical-mechanical processing, or by removing heat energy from the central area of the pad during chemical-mechanical polishing.
Described are pads and methods used in chemical-mechanical polishing (also referred to as chemical-mechanical planarization) of microelectronic substrates, the pads having a polishing surface that includes rigid sections and compliant sections.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
Methods and systems for a connection assembly that includes a connector pipe. The connector pipe includes a hollow main body for extending through an upper plate and a lower plate of a manifold, a truncated-cone exit end, the truncated-cone exit end including an outer surface that tapers outwardly from an exit of the truncated-cone exit end to a first surface that is traverse to the hollow main body, and the first surface includes a second outer surface that tapers outwardly from the first surface to the flange extending around the main body, and a recess is provided between the flange and the hollow main body. The connector pipe is configured to be inserted into a port of a processing equipment such that the truncated-cone exit end is compressible between the outer surface of the truncated-cone exit end and an inner wall of the port to form a sealing surface.
F16L 23/02 - Raccords à brides les brides étant raccordées par des organes tendus axialement
F16L 33/28 - Dispositions d'assemblage des manches avec des organes rigidesRaccords rigides pour manches, p. ex. éléments unitaires s'engageant à la fois dans deux manches pour des manches ayant une extrémité en forme de collet ou de bride radiaux
F16L 19/02 - Extrémités de tuyaux pourvues de colliers ou de brides formant corps ou non avec les tuyaux, maintenues en contact par un organe vissé
B01D 35/02 - Filtres adaptés à des endroits particuliers, p. ex. conduites, pompes, robinets
Described are pads for chemical-mechanical polishing having a central area that is adapted to control pad temperature at the central area by controlling the amount of friction between the pad and a wafer substrate at the central area during chemical-mechanical processing, or by removing heat energy from the central area of the pad during chemical-mechanical polishing.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
A filter module includes an interface body and a filter retention body. A filter can be disposed between the filter retention body and a filter retainer joined to the filter retention body. The filter retention body can further include a valve. The filter retainer can be joined to the filter retention body by a snap fit, a press-fit, or a weld. The filter retainer can include stand-offs configured to contact the filter such that the filter is held away from the filter grill. The filter module can be used for providing purge in a wafer container such as a front opening unified pod (FOUP).
A reticle pod includes an outer portion that includes a pod door and a pod dome, and an inner portion including a baseplate and a cover. One of the baseplate or the cover includes a reticle compartment wall extending towards the other of the baseplate or cover. The reticle compartment wall includes one or more retaining features. The pod door or the pod dome includes one or more actuating surfaces configured to contact the retaining features. The retaining features are configured to be moved by contact with the actuating surfaces. The retaining features may be in a position configured to secure a reticle within the inner portion of the reticle pod when the reticle pod is assembled by joining the baseplate and the cover, placing the joined baseplate and cover within the pod dome, and securing the pod door to the pod dome.
Methods for making positive and negative tone photoresists are provided. The methods comprise obtaining a substrate comprises a bismuth and contacting the substrate with a precursor compound comprises a bismuth coordinated to at least one ligand to form a bismuth-containing film on a surface of the substrate. The at least one ligand comprises an oxygen or a sulfur. A portion of the bismuth-containing film is photo-exposed using extreme ultraviolet light to form a photo-exposed surface portion and a non-photo-exposed surface portion. To form a positive tone photoresist, the substrate is contacted with a solvent to remove the photo-exposed surface portion. To form a negative tone photoresist, the substrate is contacted with a solvent to remove the non-photo-exposed surface portion.
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for manufacturing a support wall for a substrate carrying container, the method including steps of injection molding a polymer resin in a single step to form a support wall as a single, integrally molded component. The support wall includes a corrugated wall portion having a first average thickness and a plurality of support ledges extending perpendicularly from the corrugated wall portion. The support ledges have a second average thickness less than the first average thickness.
Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.
Described are containers and methods of mixing a slurry such as a CMP slurry in a container, the container comprising baffles to allow the slurry to be mixed to a uniform distribution within the container, while forming not more than a minimum vortex.
Described are containers and methods of mixing a slurry such as a CMP slurry in a container, the container comprising baffles to allow the slurry to be mixed to a uniform distribution within the container, while forming not more than a minimum vortex.
B01F 23/53 - Mélange de liquides avec des solides en utilisant des agitateurs entraînés
B01F 27/805 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins avec des agitateurs tournant autour d'un axe sensiblement vertical les agitateurs ou les récipients étant déplacés afin de les mettre en position de fonctionnementMoyens de fixation du récipient
B01F 27/91 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins avec des agitateurs tournant autour d'un axe sensiblement vertical avec des hélices
B01F 27/71 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins avec des agitateurs tournant autour d'un axe horizontal ou incliné avec des hélices
B01F 101/27 - Mélange d'ingrédients pour le broyage, le polissage ou le rodage
42.
HIGH PURITY PRECURSOR COMPOSITIONS AND RELATED METHODS
High purity precursor compositions and related methods are provided herein. The method includes obtaining a metal complex and a reagent. The method includes contacting the metal complex and the reagent to form a reaction product. The reaction product has a purity of at least 85% as determined by a thermogravimetric analysis (TGA) residue at 300 °C. The reaction product can be used as a deposition precursor.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C07F 11/00 - Composés contenant des éléments des groupes 6 ou 16 du tableau périodique
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
43.
BISMUTH FILMS TARGETING EUV PHOTOLITHOGRAPHY APPLICATIONS
Methods for making positive and negative tone photoresists are provided. The methods comprise obtaining a substrate comprises a bismuth and contacting the substrate with a precursor compound comprises a bismuth coordinated to at least one ligand to form a bismuth-containing film on a surface of the substrate. The at least one ligand comprises an oxygen or a sulfur. A portion of the bismuth-containing film is photo-exposed using extreme ultraviolet light to form a photo-exposed surface portion and a non-photo-exposed surface portion. To form a positive tone photoresist, the substrate is contacted with a solvent to remove the photo-exposed surface portion. To form a negative tone photoresist, the substrate is contacted with a solvent to remove the non-photo-exposed surface portion.
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A high pressure fluid storage system with at least one pressure sensing unitary device (PSUD) which can perform the function of a pressure regulator device. The PSUD can be manufactured as a single unitary construction, wherein both the housing body and the internal pressure regulating mechanism are made from a single unit, material, or both. The PSUD does not have any welded components, is not assembled from a plurality of separate components, or both.
Colorless etchant compositions and method of obtaining colorless etchant compositions are provided. Etchant compositions may comprise a phosphoric acid, an amine-containing compound, and a light absorbing compound. The light absorbing compound is a reaction product of the phosphoric acid and a decolorizing agent. The decolorizing agent may comprise a lanthanide compound in its highest oxidation state and have strong scavenging properties of reactive oxygen species or organic radicals formed during thermally or photochemically induced amine oxidation.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Colorless etchant compositions and method of obtaining colorless etchant compositions are provided. Etchant compositions may comprise a phosphoric acid, an amine-containing compound, and a light absorbing compound. The light absorbing compound is a reaction product of the phosphoric acid and a decolorizing agent. The decolorizing agent may comprise a lanthanide compound in its highest oxidation state and have strong scavenging properties of reactive oxygen species or organic radicals formed during thermally or photochemically induced amine oxidation.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
47.
SELECTIVE ETCHANT COMPOSITIONS FOR REDUCING FOAMING
Selective etchant compositions for reducing foam and related methods are provided herein. The composition may comprise a phosphoric acid; an inhibitor; and 0.01% to 5% by weight of a defoaming agent based on a total weight of the composition. The defoaming agent may comprise at least one of an alkyl carbamate compound, a bicarbonate compound, a sulfuric acid compound, or any combination thereof.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
High purity precursor compositions and related methods are provided herein. The method includes obtaining a metal complex and a reagent. The method includes contacting the metal complex and the reagent to form a reaction product. The reaction product has a purity of at least 85% as determined by a thermogravimetric analysis (TGA) residue at 300° C. The reaction product can be used as a deposition precursor.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles in the liquid carrier, an oxidizer including an iron (iii) compound or a cerium (IV) compound, an acid having a ligand including an aromatic group or a nitrogen containing aromatic group, and has a pH of less than about 4. A method for polishing a hard carbon containing substrate includes contacting the substrate with the polishing composition and abrading the substrate with the polishing composition to remove a portion of the hard carbon layer from the substrate and thereby polish the substrate.
Methods for forming a vapor deposition precursor are provided. The method comprises contacting an aluminum halide compound, an alkoxy aluminum compound, and a Grignard reagent to form the vapor deposition precursor. The vapor deposition precursor comprises an dialkyl aluminum alkoxide compound. The vapor deposition precursor is formed without use of a pyrophoric compound. Related compositions, related precursors, and related methods are also provided, among other things.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
51.
CERIA BASED COMPOSITIONS AND METHODS FOR HARD CARBON POLISHING
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles in the liquid carrier, an oxidizer including an iron(iii) compound or a cerium(IV) compound, an acid having a ligand including an aromatic group or a nitrogen containing aromatic group, and has a pH of less than about 4. A method for polishing a hard carbon containing substrate includes contacting the substrate with the polishing composition and abrading the substrate with the polishing composition to remove a portion of the hard carbon layer from the substrate and thereby polish the substrate.
Methods for forming a vapor deposition precursor are provided. The method comprises contacting an aluminum halide compound, an alkoxy aluminum compound, and a Grignard reagent to form the vapor deposition precursor. The vapor deposition precursor comprises an dialkyl aluminum alkoxide compound. The vapor deposition precursor is formed without use of a pyrophoric compound. Related compositions, related precursors, and related methods are also provided, among other things.
Methods and related compositions for the synthesis and purification of pyromellitic dianhydride are provided. The method comprises obtaining a solid composition. The solid composition comprises at least one of a pyromellitic anhydride, a pyromellitic acid, or any combination thereof. The method comprises heating the solid composition at a temperature and a pressure sufficient to convert at least one of the pyromellitic anhydride, the pyromellitic acid, or a combination thereof to a reaction product. The reaction product comprises a pyromellitic dianhydride having a purity of at least 99.9% as measured by 1H NMR.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
54.
PURIFICATION OF PHOTORESIST POLYMER BY SURFACE-MODIFIED POROUS POLYETHYLENE MEMBRANE
Described are ligand-modified porous membranes that include a porous polymeric membrane having a ligand-modified surface, the ligand-modified surface having a hydrogen bond-acceptor group-containing ligand, a hydrogen bond-donor group-containing ligand, or both of these; methods of making the ligand-modified porous membrane; and method of using the ligand-modified porous membrane to filter a photoresist solution and remove unwanted polymer molecules from the photoresist solution.
B01D 69/02 - Membranes semi-perméables destinées aux procédés ou aux appareils de séparation, caractérisées par leur forme, leur structure ou leurs propriétésProcédés spécialement adaptés à leur fabrication caractérisées par leurs propriétés
G03F 7/26 - Traitement des matériaux photosensiblesAppareillages à cet effet
A removable filter cartridge includes a filter housing containing a filter and a sealing valve coupled to an open end of the filter housing. The sealing valve configured to removably couple the removable filter cartridge to a filter head. An open position allows fluid to flow into and out of the internal volume of the filter housing. A closed position seals the filter housing. A method for retrofitting a filter housing includes removing the filter housing from a filter head, coupling a sealing valve to the removable filter to form a removable filter cartridge, and coupling the removable filter cartridge to the filter head.
B01D 29/96 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants dans lesquels les éléments filtrants sont déplacés entre les opérations de filtrationDispositions particulières pour enlever ou remplacer les éléments filtrantsSystèmes de transport pour filtres
B01D 29/11 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants avec des éléments filtrants en forme de sac, de cage, de tuyau, de tube, de manchon ou analogue
B01D 29/66 - Rinçage par chasse, p. ex. rafale ascendante d'air à contre-courant
Methods and related compositions for the synthesis and purification of pyromellitic dianhydride are provided. The method comprises obtaining a solid composition. The solid composition comprises at least one of a pyromellitic anhydride, a pyromellitic acid, or any combination thereof. The method comprises heating the solid composition at a temperature and a pressure sufficient to convert at least one of the pyromellitic anhydride, the pyromellitic acid, or a combination thereof to a reaction product. The reaction product comprises a pyromellitic dianhydride having a purity of at least 99.9% as measured by 1H NMR.
Compositions and methods for impurity removal are provided. A method comprises obtaining a first solution comprising an amino silane compound and a halide impurity. The method comprises contacting the first solution with an anion exchange resin to obtain a second solution. The second solution comprises less of the halide impurity than the first solution.
B01D 15/36 - Adsorption sélective, p. ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction ionique, p. ex. échange d'ions, paire d'ions, suppression d'ions ou exclusion d'ions
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (USA)
Inventeur(s)
Zhu, Wenjuan
Lee, Hanwool
Lin, Ye
Zheng, Jun-Fei
Abrégé
A device includes a substrate, an insulator, a first semimetallic 1T' phase telluride portion, a semiconducting 2H phase telluride portion, and a second semimetallic 1T' phase telluride portion. The insulator is on the substrate. The first semimetallic 1T' phase telluride portion is on the insulator. The semiconducting 2H phase telluride portion is on the insulator and seamlessly connected at the atomic level to the first semimetallic 1T' phase telluride portion. The second semimetallic 1T' phase telluride portion is on the insulator and spaced apart from the first semimetallic 1T' phase telluride portion and seamlessly connected at the atomic level to the semiconducting 2HI phase telluride portion.
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
H10D 62/84 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant uniquement du sélénium ou du tellure
59.
COATINGS FOR ENHANCEMENT OF PROPERTIES AND PERFORMANCE OF SUBSTRATE ARTICLES AND APPARATUS
Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
C23C 28/04 - Revêtements uniquement de matériaux inorganiques non métalliques
B01D 39/20 - Autres substances filtrantes autoportantes en substance inorganique, p. ex. papier d'amiante ou substance filtrante métallique faite de fils métalliques non-tissés
B01D 67/00 - Procédés spécialement adaptés à la fabrication de membranes semi-perméables destinées aux procédés ou aux appareils de séparation
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (Singapour)
Inventeur(s)
Guddati, Subhash
Dion, Devon
Zhang, Su Xia
Liew, Yan Han
Goo, Yu Xuan
Abrégé
Described are nickel particle compositions that contain nickel particles that have a branch-like irregular morphogy, dispersant, and binder, and that are useful as a feedstock composition in additive manufacturing methods; methods for preparing the particle compositions; and methods of using the particle compositions as feedstock to form a porous shaped metal body by an additive manufacturing method.
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 1/103 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant un liant organique comprenant un mélange de, ou obtenu par réaction de, plusieurs composants autres que les solvants ou les agents lubrifiants
B22F 10/14 - Formation d’un corps vert par projection de liant sur un lit de poudre
B33Y 70/10 - Composites de différents types de matériaux, p. ex. mélanges de céramiques et de polymères ou mélanges de métaux et de biomatériaux
Polycrystalline diamond films and related methods for polished coated substrates are described herein. The article comprises a polycrystalline substrate. The article comprises a polycrystalline diamond film located on the polycrystalline substrate. The polycrystalline diamond film has an average grain size that is smaller than an average grain size of the polycrystalline substrate. The polycrystalline diamond film has an average surface roughness Ra of 50 nm or less as measured by atomic force microscopy (AFM).
C23C 16/52 - Commande ou régulation du processus de dépôt
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verreAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p. ex. de la pierre, des céramiques, de la porcelaine
Compositions and methods for impurity removal are provided. A method comprises obtaining a first solution comprising an amino silane compound and a halide impurity. The method comprises contacting the first solution with an anion exchange resin to obtain a second solution. The second solution comprises less of the halide impurity than the first solution.
B01J 47/12 - Procédés d'échange d'ions en généralAppareillage à cet effet caractérisés par l'emploi d'une substance échangeur d'ions sous forme de rubans, de filaments, de fibres ou de feuilles, p. ex. sous forme de membranes
The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precursors to form films.
C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (Singapour)
Inventeur(s)
Dion, Devon Nichole
Warke, Virendra
Wang, Chengcheng
Leavy, Montray
Guddati, Subhash
Vasanthakumar, Aravind
Zhang, Su Xia
Xu, Zhengkai
Abrégé
Described are particle compositions that contain metal particles, pore-forming particles, and irregularly-shaped agglomerate particles formed from the metal particles and the pore-forming particles; particle composition that are useful as a feedstock composition in an additive manufacturing process; and methods of using a particle composition as described as a feedstock for forming a porous shaped metal body by an additive manufacturing process.
B22F 7/00 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
B22F 10/14 - Formation d’un corps vert par projection de liant sur un lit de poudre
66.
MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS
Components comprising multilayer coatings for reducing surface metals and related methods of producing multilayer coatings are disclosed. A coating comprises an oxide layer and an aluminum oxide layer. The aluminum oxide layer is different than the oxide layer. The oxide layer is located between a component and the aluminum oxide layer. When measured using Secondary Ion Mass Spectrometry (SIMS), the oxide layer and the aluminum oxide layer reduce a concentration of an impurity in the aluminum oxide layer by at least 10% compared to a control coating without the oxide layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
67.
METHODS FOR SOLUTION-PHASE ANALYSIS OF IMPURITIES IN MOLYBDENUM PRECURSORS
Methods for solution-phase analysis of impurities in molybdenum precursors are provided. The method comprises obtaining a solid composition. The solid composition comprises a first molybdenum oxyhalide compound. The solid composition comprises 5% or less by weight of at least one impurity based on a total weight of the solid composition. The at least one impurity comprises a second molybdenum oxyhalide compound. The second molybdenum oxyhalide compound is different from the first molybdenum oxyhalide compound. The method comprises dissolving the solid composition in a solvent to obtain a solution comprising the first molybdenum oxyhalide compound and the second molybdenum oxyhalide compound. The method comprises detecting a presence of the second molybdenum oxyhalide compound in the solution.
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
Polycrystalline diamond films and related methods for polished coated substrates are described herein. The article comprises a polycrystalline substrate. The article comprises a polycrystalline diamond film located on the polycrystalline substrate. The polycrystalline diamond film has an average grain size that is smaller than an average grain size of the polycrystalline substrate. The polycrystalline diamond film has an average surface roughness Ra of 50 nm or less as measured by atomic force microscopy (AFM).
C30B 28/14 - Production de matériaux polycristallins homogènes de structure déterminée directement à partir de l'état gazeux par réaction chimique de gaz réactifs
Methods for solution-phase analysis of impurities in molybdenum precursors are provided. The method comprises obtaining a solid composition. The solid composition comprises a first molybdenum oxyhalide compound. The solid composition comprises 5% or less by weight of at least one impurity based on a total weight of the solid composition. The at least one impurity comprises a second molybdenum oxyhalide compound. The second molybdenum oxyhalide compound is different from the first molybdenum oxyhalide compound. The method comprises dissolving the solid composition in a solvent to obtain a solution comprising the first molybdenum oxyhalide compound and the second molybdenum oxyhalide compound. The method comprises detecting a presence of the second molybdenum oxyhalide compound in the solution.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
70.
COMPOSITIONS FOR INCREASING MATERIAL REMOVAL RATE OF SILICON CARBIDE AND RELATED METHODS
Compositions for increasing material removal rate during CMP polishing and related methods are provided. The composition comprises an oxidizer. The composition comprises a plurality of particles. The composition comprises 0.01% to 5% by weight of at least one rare earth metal salt compound based on a total weight of the composition. When the composition is applied to a silicon carbide substrate and when the silicon carbide substrate is polished, the at least one rare earth metal salt compound is present in an amount sufficient to result in an increase in a material removal rate relative to a control composition. The control composition does not comprise the at least one rare earth metal salt compound.
Compositions for increasing material removal rate during CMP polishing and related methods are provided. The composition comprises an oxidizer. The composition comprises a plurality of particles. The composition comprises 0.01% to 5% by weight of at least one rare earth metal salt compound based on a total weight of the composition. When the composition is applied to a silicon carbide substrate and when the silicon carbide substrate is polished, the at least one rare earth metal salt compound is present in an amount sufficient to result in an increase in a material removal rate relative to a control composition. The control composition does not comprise the at least one rare earth metal salt compound.
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
72.
MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS
Components comprising multilayer coatings for reducing surface metals and related methods of producing multilayer coatings are disclosed. A coating comprises an oxide layer and an aluminum oxide layer. The aluminum oxide layer is different than the oxide layer. The oxide layer is located between a component and the aluminum oxide layer. When measured using Secondary Ion Mass Spectrometry (SIMS), the oxide layer and the aluminum oxide layer reduce a concentration of an impurity in the aluminum oxide layer by at least 10% compared to a control coating without the oxide layer.
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a silica abrasive, an alumina abrasive, and a combination thereof, (b) a polishing promoter compound comprising (i) at least two nitrogen atoms and (ii) at least two chemical moieties selected from a phosphonic acid, a carboxylic acid, an alcohol, an anhydride, and a combination thereof, (c) a topography control agent comprising a nonionic polymer, an anionic polymer, or a combination thereof, (d) a corrosion inhibitor, and (e) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silver, using said composition.
Metal carbide films and related devices and related methods are provided herein. A device comprises a substrate and a metal carbide film located on the substrate. The metal carbide film comprises at least one of a molybdenum, a tungsten, or any combination thereof. The metal carbide film comprises a residual chlorine component. The metal carbide film has a carbon content of at least 10% based on a total composition of the metal carbide film.
C23C 16/14 - Dépôt d'un seul autre élément métallique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/64 - Fabrication ou traitement de dispositifs à l'état solide autres que des dispositifs à semi-conducteurs, ou de leurs parties constitutives, par des méthodes non spécialement adaptées à un seul type de dispositifs couverts par les sous-classes , , ou
The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles, wherein the colloidal silica particles are surface-modified with an aminosilane compound, and wherein the colloidal silica particles have an isoelectric point of about 6 to about 10, (b) a buffering agent, and (c) water, wherein the polishing composition has a pH of about 1 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate using said composition.
Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/52 - Commande ou régulation du processus de dépôt
77.
DEVICES AND SYSTEMS FOR ADVANCED PURIFICATION AND RELATED METHODS
Devices systems for the advanced purification of precursor material and related methods are provided. A vessel assembly comprises a vessel. The vessel is configured to contain a precursor material. The precursor material comprises at least one impurity. The vessel assembly comprises a sorbent medium. When the precursor material is vaporized to obtain a vaporized precursor comprising the at least one impurity, the sorbent medium is contained in the vessel in a location that is in a flow path of the vaporized precursor. The sorbent medium is configured to sorb the at least one impurity.
B01D 53/04 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse avec adsorbants fixes
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
78.
AREA SELECTIVE DEPOSITION OF ALUMINUM BASED FILMS USING ALKYL ALUMINUM AMIDINATE PRECURSORS
Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a silica abrasive, an alumina abrasive, and a combination thereof, (b) a polishing promoter compound comprising (i) at least two nitrogen atoms and (ii) at least two chemical moieties selected from a phosphonic acid, a carboxylic acid, an alcohol, an anhydride, and a combination thereof, (c) a topography control agent comprising a nonionic polymer, an anionic polymer, or a combination thereof, (d) a corrosion inhibitor, and (e) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silver, using said composition.
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
80.
METAL CARBIDE FILMS AND RELATED DEVICES AND RELATED METHODS
Metal carbide films and related devices and related methods are provided herein. A device comprises a substrate and a metal carbide film located on the substrate. The metal carbide film comprises at least one of a molybdenum, a tungsten, or any combination thereof. The metal carbide film comprises a residual chlorine component. The metal carbide film has a carbon content of at least 10% based on a total composition of the metal carbide film.
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/52 - Commande ou régulation du processus de dépôt
81.
DEVICES AND SYSTEMS FOR ADVANCED PURIFICATION AND RELATED METHODS
Devices systems for the advanced purification of precursor material and related methods are provided. A vessel assembly comprises a vessel. The vessel is configured to contain a precursor material. The precursor material comprises at least one impurity. The vessel assembly comprises a sorbent medium. When the precursor material is vaporized to obtain a vaporized precursor comprising the at least one impurity, the sorbent medium is contained in the vessel in a location that is in a flow path of the vaporized precursor. The sorbent medium is configured to sorb the at least one impurity.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
B01D 39/00 - Substance filtrante pour fluides liquides ou gazeux
82.
CMP COMPOSITION INCLUDING CERIA POLYMER COMPOSITE PARTICLES
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier and ceria polymer composite particles dispersed in the liquid carrier. The ceria polymer composite particles comprise, consist of, or consist essentially of ceria particles covalently bonded to and at least partially embedded in a polymer matrix.
The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles, wherein the colloidal silica particles are surface-modified with an aminosilane compound, and wherein the colloidal silica particles have an isoelectric point of about 6 to about 10, (b) a buffering agent, and (c) water, wherein the polishing composition has a pH of about 1 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate using said composition.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, colloidal silica particles dispersed in the liquid carrier; an iron-containing polishing accelerator; a stabilizer bound to the iron-containing polishing accelerator; an alcohol amine compound including at least three alcohol groups and at least two amine groups; and a pH of less than about 4.
Selective etch inhibitor compounds and related methods are provided. A method comprises obtaining a composition comprising an inhibitor compound; and selectively etching silicon nitride from a structure comprising silicon nitride. A composition comprises a phosphoric acid compound, an alkyl ammonium silicate compound, and 1% to 25% by weight of an inhibitor compound based on a total weight of the composition.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
86.
CMP COMPOSITION INCLUDING CERIA POLYMER COMPOSITE PARTICLES
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier and ceria polymer composite particles dispersed in the liquid carrier. The ceria polymer composite particles comprise, consist of, or consist essentially of ceria particles covalently bonded to and at least partially embedded in a polymer matrix.
Selective etch inhibitor compounds and related methods are provided. A method comprises obtaining a composition comprising an inhibitor compound; and selectively etching silicon nitride from a structure comprising silicon nitride. A composition comprises a phosphoric acid compound, an alkyl ammonium silicate compound, and 1% to 25% by weight of an inhibitor compound based on a total weight of the composition.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, colloidal silica particles dispersed in the liquid carrier, an iron-containing polishing accelerator; a stabilizer bound to the iron-containing polishing accelerator; an alcohol amine compound including at least three alcohol groups and at least two amine groups; and a pH of less than about 4.
Methods and systems for producing spherical graphite particles is disclosed. The method comprises feeding a slurry to a spray dryer. The slurry comprises a plurality of first particles and a petroleum pitch. The slurry is dispensed from a nozzle of the spray dryer to produce a second plurality of particles. The sphericity of the second plurality of particles is different from a sphericity of the first plurality of particles. The second plurality of particles is fed from the spray dryer to a vertical graphitization column, where the second plurality of particles are heated to produce a third plurality of particles. The sphericity of the third plurality of particles is different from the sphericity of the first plurality of particles. The third plurality of particles can be a plurality of spherical graphite particles.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
B01D 1/18 - Évaporation par pulvérisation pour obtenir des solides secs
Methods and systems for producing spherical graphite particles is disclosed. The method comprises feeding a slurry to a spray dryer. The slurry comprises a plurality of first particles and a petroleum pitch. The slurry is dispensed from a nozzle of the spray dryer to produce a second plurality of particles. The sphericity of the second plurality of particles is different from a sphericity of the first plurality of particles. The second plurality of particles is fed from the spray dryer to a vertical graphitization column, where the second plurality of particles are heated to produce a third plurality of particles. The sphericity of the third plurality of particles is different from the sphericity of the first plurality of particles. The third plurality of particles can be a plurality of spherical graphite particles.
B01J 8/24 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés les particules étant fluidisées selon la technique du "lit fluidisé"
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
03 - Produits cosmétiques et préparations de toilette; préparations pour blanchir, nettoyer, polir et abraser.
07 - Machines et machines-outils
09 - Appareils et instruments scientifiques et électriques
12 - Véhicules; appareils de locomotion par terre, par air ou par eau; parties de véhicules
Produits et services
Silicon carbide for industrial purposes; silicon carbide for
use as a raw material in the manufacture of other goods;
silicon carbide; chemical additives, namely, abrasive
dispersions for use in the manufacture of electronic
components and substrates, optical components, metals,
machinery, computer parts, and magnetic data-storage disks
and heads; abrasive preparations in the nature of chemical
cleaners, namely, abrasive cleaning preparations being
abrasive dispersion slurries and cleaning and polishing
preparations for use in the fields of finishing of
electronic components and substrates, optical components,
glass, metals, plastics, machinery, computer parts, magnetic
data-storage disks and heads; chemical mechanical polishing
(cmp) slurry and chemical mechanical planarization (cmp)
slurry for use in the manufacturing and processing of
semiconductors in the optoelectronics and photonics
industries; chemical compositions for depositing films on
substrates in the manufacture of semiconductors, flat panel
displays, and solar panels; sub-atmospheric pressure gases
for ion implantation and chemical vapor deposition; chemical
mechanical polishing (cmp) slurry and chemical mechanical
planarization (cmp) slurry for use in the manufacturing and
processing of semiconductors. Silicon carbide for use as an abrasive; industrial abrasives
being abrasive compounds for use in lapping and polishing
semiconductors, silicon wafers, glass and metal surfaces;
chemical slurries for polishing semiconductors. Machine parts, namely, work holding fixtures for precision
machining applications; machine tool holders; parts of
machines, namely, disks, beams, optical benches, optical
mirrors, telescopes, body-tubes for telescopes, and optical
tube assemblies for telescopes; chamber components and parts
for processing tools used in semiconductor, flat panel
display, and solar cell manufacturing industries; chamber
components and parts for processing tools used in
semiconductor, flat panel display, and solar cell
manufacturing industries. Solar wafers; wafers for integrated circuits; chip carriers,
namely, semiconductor chip housings; semiconductor wafers;
wafer carriers; carriers, baffle assemblies, and hand pickup
tools made of silicon carbide; optical benches; scientific
and technical apparatus, namely, optical mirrors;
telescopes; body-tubes for telescopes; optical tube
assemblies (OTAs) for telescopes; anodes; silicon anodes;
fuel cells; fuel cell electrodes. Aircraft parts, namely, structural parts of aircrafts made
of silicon carbide.
Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.
Composition, related systems and methods of removing metal oxides from a structure. The composition comprises 10% to 25% by weight of an ammonium fluoride based on a total weight of the composition. The composition comprises 0.1% to 1% by weight of a hydrogen fluoride based on a total weight of the composition. The composition comprises 0.1% to 1% by weight of a nitride inhibitor based on a total weight of the composition. When the composition contacts a structure comprising a silicon nitride surface and a metal oxide surface, the composition selectively etches the metal oxide surface.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
94.
COMPOSITIONS, RELATED SYSTEMS, AND RELATED METHODS OF REMOVING METAL OXIDES
Composition, related systems and methods of removing metal oxides from a structure. The composition comprises 10% to 25% by weight of an ammonium fluoride based on a total weight of the composition. The composition comprises 0.1% to 1% by weight of a hydrogen fluoride based on a total weight of the composition. The composition comprises 0.1% to 1% by weight of a nitride inhibitor based on a total weight of the composition. When the composition contacts a structure comprising a silicon nitride surface and a metal oxide surface, the composition selectively etches the metal oxide surface.
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.
A precursor delivery system for determining material levels and related methods can include an ampoule and at least one tray disposed in the ampoule. The at least one tray may be configured to hold an amount of a precursor material. A load cell assembly is also included. The load cell assembly may include a load cell. The load cell assembly may be coupled to the at least one tray in a configuration sufficient for the at least one tray to exert a mechanical force upon the load cell. This mechanical force may be correlative to the amount of precursor material present on the at least one tray and thus may be used to determine material levels within the ampoule.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
G01G 17/04 - Appareils ou méthodes pour peser un produit ayant une forme ou des propriétés particulières pour peser des fluides, p. ex. des gaz, des produits pâteux
Described are methods, systems, and apparatus for processing a gas mixture that contains at least two gases by contacting the gas mixture with a membrane that allows for preferential flow of one of the gases through the membrane, to separate one constituent gas from the mixture.
B01D 53/22 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par diffusion
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
98.
LOW CORROSION HIGH REMOVAL RATE COMPOSITION FOR TUNGSTEN AND MOLYBDENUM CMP
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, colloidal silica particles dispersed in the liquid carrier; an iron-containing polishing accelerator; a stabilizer bound to the iron-containing polishing accelerator; an alkyl-N-oxide compound including an alkyl group having at least 8 carbon atoms; and a pH of less than about 4.
A handle includes a torque limiting device. The torque limiting device includes a plurality of driven members and a plurality of driving members. The plurality of driving members is configured to drive the plurality of driven members in a first direction to turn a valve. In response to turning the valve, the plurality of driving members disengages from the plurality of driven members upon reaching a torque threshold. Feedback is provided when the torque limiting device reaches the torque threshold.
F16D 7/04 - Accouplements à glissement, p. ex. glissant en cas de surcharge, pour absorber les chocs du type à rochet
F16D 43/202 - Embrayages automatiques à commande interne actionnés entièrement mécaniquement commandés par le couple, p. ex. embrayages à déclenchement en cas de surcharge, embrayages à glissement avec dispositifs par lesquels le couple fait varier la pression d'embrayage du type à rochet
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, colloidal silica particles dispersed in the liquid carrier; an iron-containing polishing accelerator; a stabilizer bound to the iron-containing polishing accelerator; an alkyl-N-oxide compound including an alkyl group having at least 8 carbon atoms; and a pH of less than about 4.
