A device for measuring the performance of an optical detector includes a cryostat, a holder capable of receiving the detector, secured to the inside of the cryostat, and means for measuring the performance of the detector. It also includes a screen arranged around the holder capable of limiting the radiation likely to reach the holder in a wavelength range of the detector, and a single-mode optical fiber in the wavelength range of the detector, inserted in an opening of the cryostat. The device further comprises at least one luminous flux generation module that incorporates a fibered source capable of generating the luminous flux in the optical fiber.
The invention relates to a device for the infrared spectrometry measurement (20) of a polychromatic light beam, the device comprising: - an uncooled thermal image sensor (10) incorporating an array of microbolometers (19) receiving the polychromatic light beam through an optical window (12), this window being designed to transmit infrared radiation in a wavelength range of between 1 and 25 micrometres such that the microbolometers (19) operate in a fundamental resonance range so as to capture infrared radiation between 7 and 20 micrometres and in a first harmonic resonance range so as to capture infrared radiation between 3 and 4 micrometres; - an image processing unit (29) capable of obtaining a spectrometry measurement in the fundamental resonance range and in the first harmonic resonance range from the images captured by the uncooled thermal image sensor (10).
G01N 21/3504 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p. ex. analyse de mélanges de gaz
G01J 3/18 - Production du spectreMonochromateurs en utilisant des éléments diffractants, p. ex. réseaux
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
LYNRED (France)
Inventeur(s)
Evirgen, Axel
Gerard, Bruno
Abrégé
The invention relates to a detection device configured to detect infrared radiation at a predetermined operating temperature, comprising at least one pixel produced by a stack of layers on a substrate in a first direction normal to said substrate, said pixel comprising an absorption heterostructure comprising at least: a first planar absorption structure having a first maximum valence band value; and a second planar absorption structure adjacent to the first planar absorption structure, said second planar absorption structure having a second maximum valence band value distinct from the first maximum valence band value. The thickness of each of the first and second planar absorption structures is selected so as to create at least one interface electric field at the interface between the second planar absorption structure and the first planar absorption structure, said interface electric field being oriented in the first direction.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
The present description concerns an infrared imaging device (200) comprising an infrared camera (210) having an optical axis (A), said camera being intended to detect an infrared radiation in a spectral range through an element (132) transparent to said infrared radiation, the transparent element being inclined by an angle of inclination (a) greater than 0° and smaller than 90° or smaller than 0° and greater than −90° relative to an image capture direction (C);
The present description concerns an infrared imaging device (200) comprising an infrared camera (210) having an optical axis (A), said camera being intended to detect an infrared radiation in a spectral range through an element (132) transparent to said infrared radiation, the transparent element being inclined by an angle of inclination (a) greater than 0° and smaller than 90° or smaller than 0° and greater than −90° relative to an image capture direction (C);
the device further comprising a refractor element (230) transparent to the infrared radiation in the spectral range and adapted to be positioned between the transparent element and the infrared camera, said refractor element comprising a virtual exit facet of the refractor element, corresponding to an exit facet (234) of the refractor element in a tunnel diagram of said refractor element, said virtual exit facet being substantially parallel to an entry facet (232) of the refractor element.
The present description concerns an infrared imaging device (200) comprising an infrared camera (210) having an optical axis (A) and intended to detect an infrared radiation in a spectral range through an element (132) transparent to said infrared radiation, said transparent element being surrounded by a mount (134), the transparent element with the mount being adapted to being inserted in an opening of a wall (130), the transparent element and the wall being inclined by an angle of inclination (a) greater than 0° and smaller than 90° or smaller than 0° and greater than −90° with respect to the optical axis (A) of the infrared camera; the device further comprising:
an interface element (230) adapted to forming an interface between the infrared camera (210) and the mount (134).
H04N 23/23 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image uniquement à partir d'un rayonnement infrarouge à partir du rayonnement infrarouge thermique
H04N 23/52 - Éléments optimisant le fonctionnement du capteur d'images, p. ex. pour la protection contre les interférences électromagnétiques [EMI] ou la commande de la température par des éléments de transfert de chaleur ou de refroidissement
This infrared detector (10d) comprises: - a base substrate (11) supporting an array of micro-bolometers (19), each micro-bolometer being mounted in suspension above said substrate by means of anchoring nails (14) extending substantially perpendicularly with respect to the base substrate (11); - side walls (13) extending substantially perpendicularly with respect to the base substrate (11); and - an optical window (12) fixed on an upper end of the side walls (13) above the micro-bolometers (19). The base substrate (11), the side walls (13) and the optical window (12) form a vacuum sealed cavity (16) within which the micro-bolometers (19) are present. The infrared detector (10d) also comprises spacers (20) extending plumb with at least 10% of the anchoring nails (14), these spacers (20) also being oriented substantially perpendicularly with respect to the base substrate (11), said spacers (20) forming a stop capable of cooperating with the lower face of the optical window (12), or with the upper end of the anchoring nails (14), and thus limiting the deflections of the optical window (12) and/or of the substrate (11).
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventeur(s)
Evirgen, Axel
Reverchon, Jean-Luc
Trinite, Virgnie
Abrégé
A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
The invention relates to an analogue counter (10) for counting the number of events in an input logic signal (vp) over a counting period comprising a set of detection cycles. This counter comprises: a circuit for periodically generating a calibrated quantity of charge (15) for each detection cycle; an integration capacitor (Cint) configured to store the calibrated quantity of charge over each detection cycle for which an event in the input logic signal is detected; a switching circuit (16) for switching the calibrated quantity of charge, this circuit being controlled by the input logic signal so as to store the calibrated quantity of charge in the integration capacitor (Cint) only when an event is detected; a circuit (17) for generating control signals; and a reset circuit (18) for resetting the output voltage (Vint) across the terminals of the integration capacitor so as to reset the count.
H03K 25/02 - Compteurs d'impulsions avec intégration pas à pas et accumulation statiqueDiviseurs de fréquence analogues comportant une accumulation de charge, p. ex. condensateur sans hystérésis de polarisation
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
9.
MWIR BARRIER PHOTODETECTOR IN WHICH THE ABSORBENT ZONE COMPRISES A STACK OF A SOLID PORTION AND A SUPERLATTICE
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
LYNRED (France)
Inventeur(s)
Gravrand, Olivier
Pere Laperne, Nicolas
Abrégé
The invention relates to a MWIR barrier photodetector which is suitable for detecting relevant light radiation having a central wavelength of between 3 and 5 µm and comprises a semiconductor structure (10) which has a barrier made of III-Sb, rests on a support substrate (2) made of III-Sb and consists of: an absorbent zone (11); a barrier layer (12); and a contact layer (13). The absorbent zone (11) consists of a stack of two portions: o a first absorbent portion (11.1) which is doped with a first type of conductivity, is made of a solid material based on InAsSb and is located on the side of the support substrate (2); and o a second absorbent portion (11.2) which is doped with the first type of conductivity, consists of a superlattice and is located between the first absorbent portion (11.1) and the barrier layer (12).
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
This method for colorizing an infrared image (11) comprises the following steps: - acquiring an infrared image (11) obtained from an infrared sensor (10) comprising a set of elementary detectors, said infrared image (11) comprising, for each elementary detector, a pixel the value of which is coded in grayscale (NG) corresponding to a value representing infrared radiation received by said elementary detector; and - generating a colorized image (13) by associating, with each pixel value coded in grayscale (NG), a pixel value coded in a colour space by means of a colour palette (12); said colour palette (12) being defined in the CIECAM02-UCS space by a palette generation module (20) using a parametric trajectory in which a parameter is a polar angle vector (Φ) of the parametric trajectory, said parametric trajectory being defined such that: - the parametric trajectory projected into a hue and chrominance plane (O, a*, b*) follows one or two ellipses; and - a dynamic range of the perceived luminance (j*) with respect to the grayscale values (NG) follows one or two straight lines.
The invention relates to an infrared detector comprising a matrix (11) of elementary detectors (14) forming the pixels of an infrared image; - each elementary detector (14) being mounted in suspension on two anchoring nails (21) with at least one anchoring nail (21) shared with one other elementary detector (14); - the elementary detectors (14) being arranged in columns (Co1-Co3) with, at the feet of each column (Co1-Co3), a dedicated reading circuit for the column (Co1-Co3); and - addressing means for successively connecting all the elementary detectors (14) of one column (Co1-Co3) to the reading circuit associated with the column (Co1-Co3); - the columns (Co1-Co3) being formed by an alignment of a single row of 15 anchoring nails (21), the pixels (17) of two consecutive columns (Co1-Co3) being placed in a staggered manner, the reading circuits (16) of two consecutive columns (Co1-Co3) being configured to measure separate responsivities.
An electromagnetic radiation detection system includes a detection circuit detecting an electromagnetic radiation and supplying a representative electrical signal. A cold table supports the detection circuit. A thermally insulating support supports the cold table. It includes an enclosure defining a closed volume and provided with a bottom, a top and a side wall connecting the bottom and the top. The thermally insulating support mechanically connects the cold table with the bottom of the enclosure. A cooler is mechanically connected to the enclosure and configured to cool the detection circuit. The cooler is mechanically fastened onto the side wall of the enclosure and thermally connected to the detection circuit by means of a thermal connector connecting the cooler and the cold table and the cold shield.
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventeur(s)
Evirgen, Axel
Reverchon, Jean-Luc
Abrégé
A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.
H01L 31/0296 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI, p.ex. CdS, ZnS, HgCdTe
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
15.
BLIND INFRARED IMAGING MICROBOLOMETER AND MANUFACTURING METHOD THEREOF
The invention relates to a blind infrared imaging microbolometer (10) comprising: - a substrate (11); - a membrane (14); and - a blocking screen (19) arranged above the membrane (14) so as to block incident infrared radiation; the blocking screen (19) comprising: at least one metal element greater than 150 nanometres in thickness; and at least two release openings (32) intended to allow the removal of at least one sacrificial layer applied during the process of manufacturing the blind microbolometer (10), each release opening (32) having an opening ratio of less than 30% and being less than 3 micrometres in size.
G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
16.
Programmable phase generator for a radiation detector
A generator of phases of a detector integrates at least one elementary machine for interpreting a microcode stored in a register. Each elementary machine includes at least one control input having a logic level change detector. Each elementary machine also includes at least one phase output having a controlled switch, enabling to define the logic level of the phase output, and a controlled inverter enabling to toggle the logic level of the phase output. Further, each elementary machine includes at least one clock signal associated with a counter, and a unit for loading the instructions and the arguments stored in the register, the instructions being coded over 3 bits.
H04N 25/76 - Capteurs adressés, p. ex. capteurs MOS ou CMOS
H04N 23/667 - Changement de mode de fonctionnement de la caméra, p. ex. entre les modes photo et vidéo, sport et normal ou haute et basse résolutions
H04N 25/709 - Circuits de commande de l'alimentation électrique
H04N 25/20 - Circuits de capteurs d'images à l'état solide [capteurs SSIS]Leur commande pour transformer uniquement le rayonnement infrarouge en signaux d'image
17.
INFRARED DETECTOR FORMING METHOD AND ASSOCIATED INFRARED DETECTOR
A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The invention relates to an infrared imaging microbolometer (10a) incorporating a diaphragm (20) suspended above a substrate (11) by means of support arms attached to anchor nails (14), the microbolometer comprising: • a support layer (13) extending within the diaphragm (20) and the support arms; • electrodes (16) arranged on the support layer (13) and in contact with the anchor nails (14), each electrode (16) extending within a support arm; • a thermoresistive material (18) arranged within the diaphragm (20) in electrical contact with the electrodes (16); and • at least one upper encapsulation layer (15) for the support arms and the thermoresistive material (18); • a side encapsulation layer (33) for the support arms arranged in contact with the side edges of said support arms, said side encapsulation layer (33) being resistant to hydrofluoric acid-based etching.
The invention relates to a method for producing at least one elementary detector (10a) of infrared radiation, each elementary detector (10a) comprising at least two microbolometers (11) each associated with a separate filter (21a-21c) of an optical window (13), the method comprising the following steps: - producing microbolometers (11) on a base substrate (12); - forming at least part of an inner face (16) of the optical window (13) to define two separate depth levels: a bonding level (NL) and a cavity level (NC); - producing a set of specific filters (21a-21c) with separate filtration properties in terms of wavelengths in the cavity level; - transferring the bonding level of the optical window to support zones (25) of the base substrate; and - direct adhesive bonding, of the SAB type, of the bonding level to the base substrate.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
20.
INFRARED IMAGING MICROBOLOMETER AND ASSOCIATED PRODUCTION METHODS
An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, optoelectronic, measuring, signaling
apparatus and instruments; image processing devices; thermal
imaging apparatus and instruments (other than for medical
use); databases; databases in the form of color palettes;
application and integration software for databases; security
surveillance and monitoring apparatus; devices for safety,
security, protection and signaling; measuring, detecting and
monitoring instruments, indicators and controllers (other
than for medical use); apparatus and instruments for the
detection and analysis of human activity not for medical
use; cameras; sensors; detectors; photosensors; optical
detectors and sensors; infrared detectors and sensors;
thermal detectors and sensors; heat detectors and sensors;
software for monitoring the environment, access and security
of buildings.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, optoelectronic, measuring, signaling apparatus and instruments, namely, thermal imaging cameras used in defense and surveillance systems; image processing devices, namely, infrared sensors for signal and video processing, for detecting heat, movement, and people; thermal imaging apparatus and instruments other than for medical use, namely, thermal imaging cameras; Downloadable electronic data files and databases containing color data, color compilations and color catalogues, for use with color systems in the field of infrared detection; Downloadable computer software for application and database integration; closed circuit TV systems for security and surveillance, namely, cameras, switchers, monitors, microphones, and recorders; devices for safety, security, protection and signaling, namely, emergency signal transmitters; measuring, detecting and monitoring instruments, indicators and controllers other than for medical use, namely, electric sensors; apparatus and instruments for the detection and analysis of human activity not for medical use, namely, motion detectors; cameras; thermal sensors, namely, thermostats; heat detectors, namely heat imaging cameras; photosensors, namely, photoelectric sensors; optical detectors and electric sensors; infrared detectors and sensors; thermal detectors and sensors, namely, radiation detectors and remote sensors for use in measuring thermal and infrared radiation energy waves; heat detectors and temperature sensors; Downloadable facilities management software to control building environment, access and security systems,
23.
DEVICE FOR MEASURING THE PERFORMANCE OF AN OPTICAL DETECTOR, AND ASSOCIATED MEASURING METHOD
This device (10) for measuring the performance of an optical detector (20) comprises: - a cryostat (17); - a holder (19) capable of receiving the detector (20) and secured to the inside of the cryostat (17); - means for measuring the performance of the detector (20); and - a screen (12a-12b) arranged around the holder (19) and capable of limiting the radiation likely to reach the holder in a wavelength range of the detector (20); - a single-mode optical fibre (16) in the wavelength range of the detector (20) and inserted into an opening (15) in the cryostat (17); - at least one module (50) for generating a luminous flux that incorporates a fibre source (23) capable of generating the luminous flux in the optical fibre (16).
G01J 5/061 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité par commande de la température de l’appareil ou de ses parties constitutives, p. ex. par des moyens de refroidissement ou par des thermostats
2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.
H01L 23/26 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet incluant des matériaux destinés à absorber ou à réagir avec l'humidité ou d'autres substances indésirables
The present description relates to an infrared imaging device (200) comprising an infrared camera (210) having an optical axis (A), said camera being intended to detect infrared radiation in a spectral range through an element (132) that is transparent to said infrared radiation, the transparent element being tilted by a tilt angle (a) greater than 0° and less than 90° or less than 0° and greater than -90° with respect to an image capture direction (C); the device further comprising a refractor element (230) that is transparent to infrared radiation in the spectral range and is capable of being positioned between the transparent element and the infrared camera, said refractor element comprising a virtual exit facet of the refractor element, corresponding to an exit facet (234) of the refractor element in a tunnel diagram of said refractor element, said virtual exit facet being substantially parallel to an entry facet (232) of the refractor element.
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
The present description relates to an infrared imaging device (200) comprising an infrared camera (210) having an optical axis (A), said camera being intended to detect infrared radiation in a spectral range through an element (132) that is transparent to said infrared radiation, the transparent element being tilted by a tilt angle (α) greater than 0° and less than 90° or less than 0° and greater than -90° with respect to an image capture direction (C); the device further comprising a refractor element (230) that is transparent to infrared radiation in the spectral range and is capable of being positioned between the transparent element and the infrared camera, said refractor element comprising a virtual exit facet of the refractor element, corresponding to an exit facet (234) of the refractor element in a tunnel diagram of said refractor element, said virtual exit facet being substantially parallel to an entry facet (232) of the refractor element.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
27.
METHOD FOR PRODUCING AT LEAST ONE OPTICAL WINDOW, AND ASSOCIATED OPTICAL WINDOW AND INFRARED DETECTOR
This method for producing at least one optical window for an infrared detector (10a), comprises the following steps: - use of a substrate formed of a layer of silicon or germanium (25), at least one face (16, 17) of the substrate being coated with an oxide film (13), itself coated with a silicon or germanium film (14); - reactive-ion etching of the silicon or germanium film (14) with a stop on the oxide film (13) so as to form the features of at least one periodic diffraction grating (21); and - etching of the oxide film (13) so as to remove the oxide film (13) present on the features of the at least one periodic diffraction grating (21).
The present disclosure relates to an infrared imaging device (200) comprising an infrared camera (210) that has an optical axis (A) and is intended to detect infrared radiation in a spectral range through a transparent element (1323) that is transparent to the infrared radiation, the transparent element being surrounded by a frame (134), the transparent element with the frame being suitable for being inserted into an opening in a wall (130), the transparent element and the wall being inclined by an angle of inclination (a) greater than 0° and less than 90° or less than 0° and greater than -90° relative to the optical axis (A) of the infrared camera; the device further comprising: - an interface element (230) suitable for forming an interface between the infrared camera (210) and the frame (134).
The present disclosure relates to an infrared imaging device (200) comprising an infrared camera (210) that has an optical axis (A) and is intended to detect infrared radiation in a spectral range through a transparent element (1323) that is transparent to the infrared radiation, the transparent element being surrounded by a frame (134), the transparent element with the frame being suitable for being inserted into an opening in a wall (130), the transparent element and the wall being inclined by an angle of inclination (α) greater than 0° and less than 90° or less than 0° and greater than -90° relative to the optical axis (A) of the infrared camera; the device further comprising: - an interface element (230) suitable for forming an interface between the infrared camera (210) and the frame (134).
An infrared sensor includes an assembly of pixels juxtaposed in rows and in columns, each pixel integrating an imaging microbolometer and an integrator assembly. The integrator assembly includes a transistor assembled as an amplifier, and a capacitor assembled in feedback on the transistor between an output node and an integration node. The integration node is connected to a skimming transistor operating as a current mirror with a skimming control transistor offset outside of the pixel. A skimming current flowing through the skimming control transistor is controlled according to the temperature of at least one thermalized microbolometer. The current mirror assembly enables to transmit the skimming current flowing through said skimming control transistor onto the integration node so that the capacitor integrates the difference between a current flowing through the imaging microbolometer and the skimming current.
G01J 5/24 - Utilisation de circuits spécialement adaptés, p. ex. de circuits en pont
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
31.
SYSTEM FOR DETECTING ELECTROMAGNETIC RADIATION AND COOLING METHOD
Disclosed is an electromagnetic radiation detection system (1) that comprises a detection circuit (2) for detecting electromagnetic radiation and supplying a representative electrical signal. A cold table (3) supports the detection circuit (2). A thermally insulating support (4) supports the cold table (3). The system further comprises an enclosure (7) defining a closed volume provided with a bottom, a top and a side wall connecting the bottom and the top. The thermally insulating support (4) mechanically connects the cold table (3) with the bottom of the enclosure (7). A cooler (8) is mechanically connected to the enclosure (7) and configured to cool the detection circuit (2). The cooler (8) is mechanically fastened onto the side wall of the enclosure (7) and thermally connected to the detection circuit (2) by means of a thermal connector (9) connecting the cooler (8) and the cold table (3) and the cold screen (5).
G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
G01J 5/061 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité par commande de la température de l’appareil ou de ses parties constitutives, p. ex. par des moyens de refroidissement ou par des thermostats
32.
INFRARED DETECTOR IMPROVED VIA ENGINEERING OF THE EFFECTIVE MASS OF CHARGE CARRIERS
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventeur(s)
Evirgen, Axel
Reverchon, Jean-Luc
Trinite, Virgnie
Abrégé
The invention relates to a device for detecting infrared radiation, comprising at least one pixel (Pxl) having an axis in a Z-direction, said pixel comprising a first absorbent planar structure (SPA) comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure (SPA) is selected such that: The first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one among: a first type of positive charge carriers denoted heavy holes having a first effective mass; and a second type of positive charge carriers denoted light holes having a second effective mass strictly lower than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/036 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
33.
Process for producing a microbolometer comprising a vanadium-oxide-based sensitive material
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
H10N 15/10 - Dispositifs thermoélectriques utilisant le changement thermique de la constante diélectrique, p. ex. en opérant au-dessus et en-dessous du point de Curie
The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530), wherein: the pitch of the detection cells in at least one direction in the plane of pixel array is between 5 and 11 μm; a pixel fill factor FF of the absorption layer (530) of the one or more detection cells in each pixel is in a range 0.10 to 0.50; and a sheet resistance Rs of the absorption layer (530) of each detection cell is between 16 and 189 ohm/sq.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530) forming a quarter-wave cavity (533) having a height (h) of between 1.5 and 5 μm, wherein the pitch of the detection cells in at least one axis in a plane of the pixel array is in the range 2.4 h to 3.6 h.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
36.
Low thermal capacity micro-bolometer and associated manufacturing method
An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
A substrate (1) having an upper layer (2) made of a cadmium-doped semiconductor material is provided in order to produce a photodiode structure. A first layer (3) made of HgCdTe is formed by liquid phase epitaxy starting from the upper layer (2) with a bath containing an n-type electrically active dopant for electrically doping the first layer (3). The cadmium diffuses from the upper layer (2) to the first layer (3) to form a cadmium concentration gradient that decreases from the interface with the upper layer (2) moving away from the interface. The cadmium concentration gradient causes a band gap gradient which decreases in the first layer (3) from the interface and causes an n-type dopant concentration gradient in the first layer (2) starting from the interface.
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/0296 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI, p.ex. CdS, ZnS, HgCdTe
38.
ARCHITECTURE OF INGAAS/GAASSB SUPERLATTICES ON AN INP SUBSTRATE
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventeur(s)
Evirgen, Axel
Reverchon, Jean-Luc
Abrégé
The invention relates to an infrared radiation detection device comprising at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first energy gap and a first conduction band value; at least one second layer having a second energy gap and a second conduction band value strictly lower than the first conduction band value; a third layer having a third energy gap lower than the first and the second energy gap, and a third conduction band value strictly lower than the second conduction band value. The elementary group is produced according to a first stacking configuration in the following order: the second layer, the third layer, the second layer then the first layer, or according to a second stacking configuration such that the third layer is confined between the first and second layers.
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
39.
Method and device for removing remanence in an infrared image of a static scene
n) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measure and on one or more previous remanence estimations of the at least some pixels and on a model of the exponential decay of the remanence.
n) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measures of a plurality of the images in the sequence.
The invention relates to a phase generator for a detector, the generator incorporating at least one elementary machine (14) for interpreting a microcode stored in a register (12), each elementary machine (14) comprising: at least one control input (GPI_0, GPI_1) comprising a detector (19) of changes in logic level; at least one phase output (GPO_0-GPO_9) comprising a controlled switch (20), allowing the logic level of the phase output (GPO_0-GPO_9) to be defined, and a controlled inverter (21) allowing the logic level of the phase output (GPO_0-GPO_9) to be inverted; at least one clock signal (MCK, Clk1) associated with a counter (18); and a module (15) for loading instructions (Inst) and arguments (Arg) stored in the register (12), the instructions (Inst) being coded on 3 bits.
The invention relates to an optical window (11a) made of germanium intended to be hermetically sealed to a base substrate with a view to forming an infrared detector, said optical window having an external face (17) and an internal face (16), and being equipped: with a multilayer interference filter (20) or a periodic diffraction grating (21) placed on the external face (17); and with a periodic diffraction grating (21) placed on the internal face (16). Said multilayer interference filter (20) or periodic diffraction grating (21) of the external face (17) and said periodic diffraction grating (21) of the internal face (16) are configured to attenuate radiation incident in a wavelength interval comprised between 2 and 8 microns. Said optical window (11a) comprises a protective layer (14) made of amorphous silicon deposited on said periodic diffraction grating (21) of said internal face (16).
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
43.
INFRARED DETECTOR FORMING METHOD AND ASSOCIATED INFRARED DETECTOR
The invention concerns a method of forming an infrared detector (10a) comprising the steps of: - definition of an optical window (11) in a cover substrate (12); said definition of the optical window (11) comprises forming a multilayer interference filter (20) or a periodic diffraction grating (21) on an upper surface (17) of said optical window (11), and a periodic diffraction grating (21) on the lower surface (16) of said optical window (11); - anodic bonding (13) of a spacer (14a) onto said cover substrate; - transfer of said cover substrate provided onto a base substrate (18); and - hermetic bonding of said spacer (14a) onto said base substrate (18);
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The invention relates to an infrared imaging microbolometer (10a) incorporating a diaphragm suspended above a substrate (11) by means of support arms attached to anchor nails (14), the diaphragm comprising: - a support layer (13) passing through the upper end of the anchor nails (14); - an absorber or electrode (16) deposited on the support layer (13) and on the anchor nails (14) with a pattern that forms at least two electrodes; - a dielectric layer (15) deposited on the absorber or electrode (16) and on the support layer (13); - at least two conductive vias (20) formed through the dielectric layer (15) in contact with the at least two electrodes; and - a thermometric or thermoresistive material (21) arranged on a flat surface formed at the upper ends of the conductive vias (20).
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
45.
Hermetic housing comprising a getter, optoelectronic component or MEMS device incorporating such a hermetic housing and associated production method
UNIVERSITE PARIS-SACLAY CENTRE NATIONAL DE LA RECHERCHE (France)
SCIENTIFIQUE (CNRS) (France)
Inventeur(s)
Lemettre, Sylvain
Bunel, David
Moulin, Johan
Bosseboeuf, Alain
Abrégé
a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1−P)*e_t<λ/2πk with λ corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.
The invention relates to a method for producing an infrared imaging micro-bolometer, comprising the following steps: - depositing and etching a sacrificial layer and subsequently a support layer (13) on a substrate (11); depositing, by chemical vapour deposition, an absorbent material (14) on the support layer (13) and on the inner walls of the openings; - depositing a conductive stop layer (20) on the absorbing material (14); - depositing, by chemical vapour deposition, a tungsten-containing conductive material (21) for filling the openings; - performing reactive ion etching on the conductive material (21) down to the stop layer (20); - removing the stop layer from the openings; depositing at least one electric-thermal transducing layer (17-18) on the absorbent material (14); and - removing the sacrificial layer.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
47.
Process for producing an infrared detector and associated infrared detector
A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.
The invention relates to a method for producing a micro-electromechanical system (10), comprising the following steps: producing (30) an electromechanical element (11) on a substrate (13); preparing (31) an encapsulation housing (18) so as to form a sealed recess (12) incorporating the electromechanical element (11), the sealed recess (12) having a volume of less than 10 mm3; physical vapour deposition (32) of a getter film (15) onto the substrate (13) or onto a wall (17) of the encapsulation housing (18) such that the getter film (15) has a specific absorption surface area of less than 8 m²/g; and sealing (33) the encapsulation housing (18) on the substrate (13) by means of a thermal sealing cycle, the temperature of which activates the getter film (15).
A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 μm and 50 μm so as to absorb the mechanical stresses induced by the first stack.
A first input receiving a voltage to be sampled formed by a terminal of a sampling capacitor. An amplifier has a first input connected to another terminal of the sampling capacitor and a second input connected to a reference voltage. The amplifier is supplied by a power supply configured to deliver a reduced current and to supply the amplifier in a first condition during a first period, deliver a rated current and to supply the amplifier in a second condition during a second period, the reduced current being lower than the rated current. During the first period, the first and second inputs of the amplifier are short-circuited.
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.
G01J 5/0803 - Dispositions pour l’atténuation en fonction du temps des signaux de rayonnement
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
A method of calibrating an infrared (IR) camera including a pixel array housed in a housing, the pixel array having an image sensor and one or more parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing, the method including: receiving, by a processing device, one or more readings from each of the parasitic heat sensing pixels and from each pixel of the pixel array; and generating, by the processing device based on the one or more readings, one or more conversion matrices for converting readings from the parasitic heat sensing pixels into pixel correction values for performing 2D signal correction of the image.
An infrared camera includes a housing containing a pixel array. The pixel array includes: image pixels forming an image sensor arranged to receive infrared light from an image scene; and a plurality of parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing.
The invention relates to an infrared sensor comprising a set of pixels (11) that are juxtaposed in rows and in columns, each pixel incorporating an imaging microbolometer (Rac) and an integrator assembly comprising: a transistor (N4) arranged to act as an amplifier; and a capacitor (Cint) arranged to counteract said transistor, between the output node (No) and an integration node (Ne); said integration node being connected to a baselining transistor (P1) that operates as a current mirror with a baselining-control transistor located outside said pixel, a baselining current (Icm) flowing through said baselining-control transistor being controlled according to the temperature of at least one thermalized microbolometer, said current-mirror arrangement allowing said baselining current flowing through said baselining-control transistor to be transmitted to said integration node so that said capacitor integrates the difference between a current (Iac) flowing through said imaging microbolometer and said baselining current.
A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
LYNRED (France)
Inventeur(s)
Pelenc, Denis
Badano, Giacomo
Cardoso, Alexi
Guillaumont, Marc
Abrégé
The invention relates to a process for producing a microbolometer 10 comprising a vanadium-oxide-based sensitive material 15 containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process comprising the following steps: o determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tr for a time ?tr, exhibits an electrical resistivity ?a|r at room temperature that is higher than 10% of its native value; o producing the sensitive material (15) in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; o exposing the sensitive material (15) to the temperature Tr for the time ?tr.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
59.
LOW THERMAL CAPACITY MICRO-BOLOMETER AND ASSOCIATED MANUFACTURING METHOD
The invention relates to an infrared imaging micro-bolometer (10a) incorporating a membrane (11a) suspended on a substrate by support arms (14a-14h). The membrane (11a) comprises: an absorber material (13a) configured to capture infrared radiation; a thermometric material (12) connected to the absorber material (13a) and configured to transduce the infrared radiation picked up by the absorber material (13a); the thermometric material (12) being arranged on an inner surface area less than 0.4 times a surface area of the membrane (11a), and at least one central dielectric layer being arranged between the absorber material (13a) and the thermometric material (12). Recesses (20) are formed in the absorber material (13a) and in the at least one dielectric layer in portions of the membrane (11a) which is free from the thermometric material (12).
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
G01J 5/58 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant l’absorptionPyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant un effet d’extinction
G01J 5/48 - ThermographieTechniques utilisant des moyens entièrement visuels
60.
LOW THERMAL CAPACITY MICRO-BOLOMETER AND ASSOCIATED MANUFACTURING METHOD
The invention relates to an infrared imaging micro-bolometer (10a) incorporating a membrane (11a) suspended on a substrate by support arms (14a-14h). The membrane (11a) comprises: an absorber material (13a) configured to capture infrared radiation; a thermometric material (12) connected to the absorber material (13a) and configured to transduce the infrared radiation picked up by the absorber material (13a); the thermometric material (12) being arranged on an inner surface area less than 0.4 times a surface area of the membrane (11a), and at least one central dielectric layer being arranged between the absorber material (13a) and the thermometric material (12). Recesses (20) are formed in the absorber material (13a) and in the at least one dielectric layer in portions of the membrane (11a) which is free from the thermometric material (12).
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530), wherein: the pitch of the detection cells in at least one direction in the plane of pixel array is between 5 and 11 µm; a pixel fill factor FF of the absorption layer (530) of the one or more detection cells in each pixel is in a range 0.10 to 0.50; and a sheet resistance Rs of the absorption layer (530) of each detection cell is between 16 and 189 ohm/sq.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530) forming a quarter-wave cavity (533) having a height (h) of between 1.5 and 5 µm, wherein the pitch of the detection cells in at least one axis in a plane of the pixel array is in the range 2.4h to 3.6h.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
09 - Appareils et instruments scientifiques et électriques
35 - Publicité; Affaires commerciales
38 - Services de télécommunications
Produits et services
Extranet software; communication and networking software;
electronic databases recorded on computer media; computer
database servers. Collection, compilation and systematization of information
into computer databases; computerized database management;
provision of commercial information via extranet and
computer databases. Telecommunication services provided via the Internet,
intranet and extranet; electronic exchange of data stored
in databases accessible via telecommunication networks.
64.
METHOD AND DEVICE FOR REMOVING REMANENCE IN AN INFRARED IMAGE OF A STATIC SCENE
nnnn-1nn) on the basis of a remanence estimate for each of said at least some pixels, wherein each remanence estimate is generated based on the remanence measurement and on one or more previous remanence estimates of the at least some pixels and of a model of the exponential decrease of the remanence.
The present invention relates to a method for removing by an image processing device remanence artifacts of an image (fn) of a sequence of images, captured by an infrared image capturing device, the method comprising: - retouching a remanence zone in the image (fn) by an inpainting method in order to generate a retouched image; - generating a remanence measure for at least some pixels in the image (fn) on the basis of the retouched image; and - removing remanence artifacts from at least some pixels of the image (fn) on the basis of a remanence estimate for each of said at least some pixels, each remanence estimate being generated on the basis of the remanence measurements of a plurality of images in the sequence.
The present invention relates to a method for removing by an image processing device remanence artifacts of an image (fn) of a sequence of images, captured by an infrared image capturing device, the method comprising: - generating a remanence measurement for at least some pixels in the image (fn) on the basis of a difference between the pixel values of the image (fn) and the pixel values of a previous image (fn-1) of the sequence; and - removing remanence artifacts from at least some pixels of the image (fn) on the basis of a remanence estimate for each of said at least some pixels, wherein each remanence estimate is generated based on the remanence measurement and on one or more previous remanence estimates of the at least some pixels and of a model of the exponential decrease of the remanence.
nnnnn) on the basis of a remanence estimate for each of said at least some pixels, each remanence estimate being generated on the basis of the remanence measurements of a plurality of images in the sequence.
09 - Appareils et instruments scientifiques et électriques
35 - Publicité; Affaires commerciales
38 - Services de télécommunications
Produits et services
Downloadable extranet software for authorizing access to databases, training and customer support in the field of detection, security and surveillance ; downloadable communication and networking software for authorizing access to databases, training and customer support in the field of detection, security and surveillance ; electronic databases in the field of thermal imaging and infrared detection recorded on computer media; computer database servers Collection, compilation and systematization of information into computer databases in the field of thermal imaging and infrared detection; computerized database management; provision of commercial information via extranet and computer databases Telecommunication services, namely, transmission of voice, data and documents, in the field of detection, security and surveillance, connections to databases, telecommunications services for providing multiple-user access to a global computer network, transmission of webcasts and podcasts, providing access to pictures, video, alarm status, building plans and other building and security information at a remote station, provided via the Internet, intranet and extranet; electronic exchange of data stored in databases accessible via telecommunication networks
09 - Appareils et instruments scientifiques et électriques
35 - Publicité; Affaires commerciales
38 - Services de télécommunications
Produits et services
(1) Logiciels d'extranet utilisés pour autoriser l'accès à des bases de données, et pour la formation et le support client dans le domaine de la détection, de l'imagerie thermique et de la détection infrarouge, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules ; logiciels de communication et de réseautage utilisés pour autoriser l'accès à des bases de données, et pour la formation et le support client dans le domaine de la détection, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules ; bases de données électroniques contenant de l'information dans le domaine de l'imagerie thermique et de la détection infrarouge enregistrées sur des supports informatiques ; serveurs de bases de données informatiques. (1) Collecte, compilation et systématisation d'informations dans des bases de données informatiques dans le domaine de l'imagerie thermique et de la détection infrarouge ; gestion de bases de données informatisées; mise à disposition d'informations commerciales via des bases de données informatiques et extranet, nommément, fourniture d'un répertoire d'information commerciale en ligne sur internet.
(2) Services de télécommunication, nommément transmission électronique de messages vocaux, d'informations et de documents dans le domaine de la détection, de l'imagerie thermique et de la détection infrarouge, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules, fourniture d'accès à des bases de données, fourniture d'accès multi-utilisateurs à un réseau informatique mondial, transmission de web émissions et podcasts dans le domaine de la détection, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules, et transmission électronique sans fil d'images, de vidéos en continu, de statuts d'alarmes, de plans d'édifices et d'autres informations dans le domaine de la détection, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules, fournis par internet, intranet et extranet ; services d'échange électronique de données stockées dans des bases de données accessibles via des réseaux de télécommunications, nommément, fourniture d'accès à des plates-formes Internet pour l'échange d'images, de vidéos en continu, de statuts d'alarmes, de plans d'édifices et d'autres informations dans le domaine de la détection, de la sécurité et de la surveillance d'édifices et de bâtiments, de chantiers, d'usines, de personnes, de véhicules.
70.
PROCESS FOR PRODUCING AN INFRARED DETECTOR AND ASSOCIATED INFRARED DETECTOR
The invention relates to a process for producing an infrared detector (9), including the following steps: - mixed bonding of a detection chip (10) to a second chip (13); said mixed-bonding step being performed by adhesion between contacts (17, 23) and insulating layers (11, 46) of the two chips (10, 13); - removing a substrate (80) from said detection chip (10) until reaching a deep oxide layer (45); - producing conductive pads (50) through said deep oxide layer (45) to reach transistors (40) present in a semiconductor layer (42); and - producing microbolometers (41) suspended over said deep oxide layer (45) and electrically connected to the conductive pads (50).
The invention relates to a process for producing an infrared detector (9), including the following steps: - mixed bonding of a detection chip (10) to a second chip (13); said mixed-bonding step being performed by adhesion between contacts (17, 23) and insulating layers (11, 46) of the two chips (10, 13); - removing a substrate (80) from said detection chip (10) until reaching a deep oxide layer (45); - producing conductive pads (50) through said deep oxide layer (45) to reach transistors (40) present in a semiconductor layer (42); and - producing microbolometers (41) suspended over said deep oxide layer (45) and electrically connected to the conductive pads (50).
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventeur(s)
Lemettre, Sylvain
Bunel, David
Moulin, Johan
Bosseboeuf, Alain
Abrégé
The invention concerns a hermetic housing (10a) for an optoelectronic component (11) or MEMS device, configured to form an enclosure (12) within which a low pressure or vacuum prevails, said hermetic housing comprising: an optical window (14) transparent to at least one wavelength of interest (?); and a layer of getter material (15a) configured to capture the gases present in the enclosure and disposed on the optical window facing the enclosure. This getter material has a thickness (et), greater than 60 nanometres, and a porosity (P) between 10 and 70% so as to satisfy the following relation: formula (I) with ? corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventeur(s)
Lemettre, Sylvain
Bunel, David
Moulin, Johan
Bosseboeuf, Alain
Abrégé
The invention concerns a hermetic housing (10a) for an optoelectronic component (11) or MEMS device, configured to form an enclosure (12) within which a low pressure or vacuum prevails, said hermetic housing comprising: an optical window (14) transparent to at least one wavelength of interest (λ); and a layer of getter material (15a) configured to capture the gases present in the enclosure and disposed on the optical window facing the enclosure. This getter material has a thickness (et), greater than 60 nanometres, and a porosity (P) between 10 and 70% so as to satisfy the following relation: formula (I) with λ corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.
An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The detecting device comprises an absorbent first stack (2) configured to absorb electromagnetic radiation in at least one first wavelength range and having a first coefficient of thermal expansion. It also comprises a second stack (3) that performs an optical function and that has a first coefficient of thermal expansion. The first coefficient of thermal expansion is different from the second coefficient of thermal expansion and in that it comprises a buffer layer (4) separating the first stack and the second stack. The buffer layer (4) has a thickness comprised between 0.5 µm and 50 µm so as to absorb mechanical stresses introduced by the first stack (2).
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
77.
HERMETIC PACKAGE COMPRISING A GETTER, PART COMPRISING SUCH A HERMETIC PACKAGE, AND ASSOCIATED MANUFACTURING PROCESS
The invention relates to a hermetic package (10) forming a chamber (12) inside which the pressure is low or there is a vacuum, the hermetic package (10) accommodating at least one part (11) in the form of an imaging bolometer and comprising a layer of monolithic getter material (15) capable of trapping gases from within the chamber (12), said layer of getter material (15) having a thickness of 20 to 200 nanometers.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
Scientific, optical, optoelectronic, measuring, signaling
apparatus and instruments; security surveillance and
monitoring apparatus; devices for safety, security,
protection and signaling; measuring, detection and
monitoring instruments, indicators and controllers;
apparatus and instruments for the detection and analysis of
human activity not for medical use; cameras; sensors;
detectors; photosensors; optical detectors and sensors;
infrared detectors and sensors; thermal detectors and
sensors; heat detectors and sensors; photovoltaic
detectors; smart sensors and detectors, i.e., which include
integrated software and electronic functions; thermostats;
infrared imaging retinas not for medical use; software for
monitoring the environment, access and security of
buildings; components, namely, semiconductor or
optoelectronic components for the aforesaid apparatus and
instruments; Electronic apparatus, devices and parts,
namely, electronic components, electronic integrated
circuits, microprocessors, electronic cards built into
optical and optoelectronic apparatus; thermostats and
apparatus for temperature control and regulation for
vehicles and vehicle engines; video cameras for vehicles;
sensors and detectors of objects or persons for vehicles;
radar equipment for vehicles; driver assistance systems for
automobiles. Detection apparatus for medical use; diagnostic, testing
and monitoring equipment for medical use; medical apparatus
for patient monitoring comprising an alarm; temperature
measuring instruments for medical use; detectors for
medical application; sensors used for medical diagnosis;
temperature monitors, sensors and scanners for medical use;
precision sensors for medical use; sensors for medical use
for monitoring patients' vital signs.
79.
DEVICE AND METHOD FOR PARASITIC HEAT COMPENSATION IN AN INFRARED CAMERA
The invention concerns an infrared camera comprising a housing (404) containing a pixel array (102), wherein the pixel array comprises: image pixels (104) forming an image sensor (103) arranged to receive infrared light from an image scene; and a plurality of parasitic heat sensing pixels (105) arranged to receive infrared light from different portions of an interior surface of said housing (404).
H04N 25/703 - Architectures de capteurs SSIS incorporant des pixels pour produire des signaux autres que des signaux d'image
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
The invention concerns a method of calibrating an infrared (IR) camera comprising a pixel array housed in a housing, the pixel array having an image sensor and one or more parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing, the method comprising: receiving, by a processing device (902), one or more readings from each of said parasitic heat sensing pixels (105) and from each pixel (104) of said pixel array; and generating, by the processing device based on said one or more readings, one or more conversion matrices (M -1 Clum and MCpix) for converting readings (Pp) from said parasitic heat sensing pixels into pixel correction values for performing 2D signal correction of said image.
H04N 25/20 - Circuits de capteurs d'images à l'état solide [capteurs SSIS]Leur commande pour transformer uniquement le rayonnement infrarouge en signaux d'image
G06T 7/80 - Analyse des images capturées pour déterminer les paramètres de caméra intrinsèques ou extrinsèques, c.-à-d. étalonnage de caméra
The invention concerns an infrared camera comprising a housing (404) containing a pixel array (102), wherein the pixel array comprises: image pixels (104) forming an image sensor (103) arranged to receive infrared light from an image scene; and a plurality of parasitic heat sensing pixels (105) arranged to receive infrared light from different portions of an interior surface of said housing (404).
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/357 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit
H04N 5/217 - Circuits pour la suppression ou la diminution de perturbations, p.ex. moiré ou halo lors de la production des signaux d'image
H04N 17/00 - Diagnostic, test ou mesure, ou leurs détails, pour les systèmes de télévision
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
82.
DEVICE AND METHOD FOR PARASITIC HEAT COMPENSATION IN AN INFRARED CAMERA
G06T 5/50 - Amélioration ou restauration d'image utilisant plusieurs images, p. ex. moyenne ou soustraction
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
(1) Appareils de contrôle et de surveillance de sécurité, nommément robots de surveillance pour la sécurité, installations électrique et électronique de vidéosurveillance; dispositifs de sûreté, de sécurité, de protection et de signalisation, nommément, caméras de vidéosurveillance; appareils et instruments de détection et d'analyse de l'activité humaine à usage non médical, nommément, moniteurs vidéo, microphones; caméras; détecteurs et capteurs de température; photodétecteurs; détecteurs et capteurs optiques; détecteurs et capteurs de rayonnement infrarouge; détecteurs et capteurs thermiques; détecteurs et capteurs de chaleur; détecteurs photovoltaïques; thermostats; rétines d'imagerie infrarouge à usage non médical, nommément, thermomètres à infrarouge pour la vérification d'équipement électrique; logiciels de contrôle de l'environnement, de l'accès et de la sécurité des bâtiments, nommément, logiciels de gestion des installations pour contrôler l'accès aux édifices et aux systèmes de sécurité; composants semi-conducteurs et optoélectroniques pour cartes de circuits intégrés, thermomètres à infrarouge pour la vérification d'équipement électrique, détecteurs et capteurs thermiques; appareils, dispositifs et organes électroniques, nommément, puces électroniques, microcircuits, circuits imprimés, semi-conducteurs, circuits électroniques intégrés, microprocesseurs, cartes de circuits électroniques intégrées dans des appareils optiques et optoélectroniques; thermostats et appareils de contrôle et de régulation de la température pour véhicules et moteurs de véhicules; caméras pour véhicules; capteurs et détecteurs d'objets ou de personnes pour véhicules; équipements radar pour véhicules; systèmes d'assistance au conducteur pour véhicules automobiles constitués de capteurs, d'interrupteurs, de caméras et de moniteurs pour l'envoi d'alertes de collision et d'accident, l'éclairage automatisé, le régulateur de vitesse adaptable, le freinage automatisé, le GPS intégré, les renseignements sur la circulation routière et la météo, les alertes de sortie de voie et la détection de présence dans les angles morts.
(2) Appareils de détection à usage médical, nommément, appareils médicaux pour la surveillance des constantes vitales des patients; équipements de diagnostic, d'examen et de surveillance à usage médical, nommément, détecteurs pour surveiller la température corporelle, les propriétés sanguines, et les événements respiratoires; appareils médicaux de surveillance de patients comprenant une alarme, nommément, capteurs de pression; instruments de mesure de la température à usage médical; capteurs destinés au diagnostic médical pour l'imagerie et la caractérisation physiologique des zones corporelles locales internes et externes; capteurs, scanners et moniteurs de température à usage médical; capteurs à usage médical pour la surveillance des constantes vitales des patients.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
Scientific, optical, optoelectronic, measuring, signaling apparatus and instruments, namely, thermal imaging cameras used in defense and surveillance systems; security surveillance and monitoring apparatus namely, thermography cameras, security cameras, night vision systems primarily comprising night sensors, night cameras, and monitors, thermal imaging cameras used in defense and surveillance systems; devices for safety, security, protection and signaling namely, surveillance cameras; detection apparatus for use in detecting heat, movement, and people, and security instruments in the nature of cameras; measuring, detection and monitoring instruments, indicators and controllers namely, intelligent and uncooled infrared detectors and sensors; apparatus and instruments for the detection and analysis of human activity not for medical use in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; cameras; sensors, namely, infrared sensors for signal and video processing, for detecting heat, movement, and people; infrared detectors; photoelectric sensors; optical detectors and sensors; infrared detectors and sensors; thermal detectors and sensors, namely, thermal imaging cameras; heat detectors and sensors, namely, heat imaging cameras; photovoltaic detectors; smart sensors and detectors, namely, temperature sensors composed of recorded software for monitoring and electronic functions in the nature of sensing and detecting; thermostats; infrared imaging retinas not for medical use in the nature of infrared detectors; recorded computer software for monitoring the environment, access and security of buildings; components for the aforesaid instruments, namely, semiconductor and optoelectronic components in the nature of uncooled infrared detectors and sensors; Electronic apparatus, devices and parts for optical receivers and transmitters, namely, electronic components, electronic integrated circuits, microprocessors, electronic cards for processing images built into optical and optoelectronic apparatus; Apparatus for temperature control and regulation for vehicles and vehicle engines, namely, thermostats; video cameras for vehicles; sensors and detectors of objects or persons for vehicles in the nature of vehicle safety equipment, namely, back-up sensors and cameras; radar equipment for vehicles, namely, radar object detectors for use on vehicles; driver assistance systems for automobiles namely, safety and driving assistant system for mobile vehicles and vessels comprised of electronic proximity sensors and switches, high-resolution cameras, integrated circuits for the purpose of imaging processing, and display monitors Detection apparatus for medical use, namely, medical apparatus for monitoring vital signs of patients for use in telemedicine and remote monitoring of patients; diagnostic, testing and monitoring equipment for medical use, namely, sensors for monitoring body heat, blood properties and respiratory events; medical apparatus for patient monitoring in the nature of patient monitoring sensors and alarms; temperature measuring instruments for medical use namely, clinical thermometers; detectors for medical application namely, diagnosis of skin cancer; sensors used for medical diagnosis, namely, clinical thermometers; temperature monitors and sensors; temperature scanners for medical use namely, clinical thermometers; precision sensors for medical use, namely, biofeedback sensors; sensors for medical use for monitoring patients' vital signs
The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.
This device (100a) for integrating an electric current (I) received on an integration node (E) comprises: - an operational amplifier (62); - an integration capacitor (64); - a circuit (105a) for modifying an output voltage (V OUT ) of the operational amplifier performed by a load transfer circuit configured to be connected on said integration node and to transfer loads in said integration capacitor; - a comparison circuit (74) configured to initiate said modification circuit at least once during said integration duration (T int ); and - a storage circuit configured to store said number of initiations that occurred during said integration duration. The received electric current is computed as a function of said output voltage as well as of said number of initiations multiplied by said modification of said output voltage induced by said modification circuit.
H03F 3/00 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
H03F 1/08 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs
H03F 3/185 - Amplificateurs à basse fréquence, p. ex. préamplificateurs à fréquence musicale comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
(1) Appareils de contrôle et de surveillance de sécurité, nommément robots de surveillance pour la sécurité, installations électrique et électronique de vidéosurveillance; dispositifs de sûreté, de sécurité, de protection et de signalisation, nommément, caméras de vidéosurveillance; appareils et instruments de détection et d'analyse de l'activité humaine à usage non médical, nommément, moniteurs vidéo, microphones; caméras; détecteurs et capteurs de température; photodétecteurs; détecteurs et capteurs optiques; détecteurs et capteurs de rayonnement infrarouge; détecteurs et capteurs thermiques; détecteurs et capteurs de chaleur; détecteurs photovoltaïques; thermostats; rétines d'imagerie infrarouge à usage non médical, nommément, thermomètres à infrarouge pour la vérification d'équipement électrique; logiciels de contrôle de l'environnement, de l'accès et de la sécurité des bâtiments, nommément, logiciels de gestion des installations pour contrôler l'accès aux édifices et aux systèmes de sécurité; composants semi-conducteurs et optoélectroniques pour cartes de circuits intégrés, thermomètres à infrarouge pour la vérification d'équipement électrique, détecteurs et capteurs thermiques; appareils, dispositifs et organes électroniques, nommément, puces électroniques, microcircuits, circuits imprimés, semi-conducteurs, circuits électroniques intégrés, microprocesseurs, cartes de circuits électroniques intégrées dans des appareils optiques et optoélectroniques; thermostats et appareils de contrôle et de régulation de la température pour véhicules et moteurs de véhicules; caméras pour véhicules; capteurs et détecteurs d'objets ou de personnes pour véhicules; équipements radar pour véhicules; systèmes d'assistance au conducteur pour véhicules automobiles constitués de capteurs, d'interrupteurs, de caméras et de moniteurs pour l'envoi d'alertes de collision et d'accident, l'éclairage automatisé, le régulateur de vitesse adaptable, le freinage automatisé, le GPS intégré, les renseignements sur la circulation routière et la météo, les alertes de sortie de voie et la détection de présence dans les angles morts.
(2) Appareils de détection à usage médical, nommément, appareils médicaux pour la surveillance des constantes vitales des patients; équipements de diagnostic, d'examen et de surveillance à usage médical, nommément, détecteurs pour surveiller la température corporelle, les propriétés sanguines, et les événements respiratoires; appareils médicaux de surveillance de patients comprenant une alarme, nommément, capteurs de pression; instruments de mesure de la température à usage médical; détecteurs pour application médicale, nommément, appareils de tests diagnostiques conçus pour détecter le cancer de la peau; capteurs destinés au diagnostic médical pour l'imagerie et la caractérisation physiologique des zones corporelles locales internes et externes; capteurs, scanners et moniteurs de température à usage médical; capteurs de précision à usage médical, nommément, capteurs de rétroaction biologique; capteurs à usage médical pour la surveillance des constantes vitales des patients.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
Scientific, optical, optoelectronic, measuring, signaling
apparatus and instruments; security surveillance and
monitoring apparatus; devices for safety, security,
protection and signaling; measuring, detection and
monitoring instruments, indicators and controllers;
apparatus and instruments for the detection and analysis of
human activity not for medical use; cameras; sensors;
detectors; photosensors; optical detectors and sensors;
infrared detectors and sensors; thermal detectors and
sensors; heat detectors and sensors; photovoltaic
detectors; smart sensors and detectors, i.e., which include
integrated software and electronic functions; thermostats;
infrared imaging retinas not for medical use; software for
monitoring the environment, access and security of
buildings; components, namely, semiconductor or
optoelectronic components for the aforesaid apparatus and
instruments; Electronic apparatus, devices and parts,
namely, electronic components, electronic integrated
circuits, microprocessors, electronic cards built into
optical and optoelectronic apparatus; thermostats and
apparatus for temperature control and regulation for
vehicles and vehicle engines; video cameras for vehicles;
sensors and detectors of objects or persons for vehicles;
radar equipment for vehicles; driver assistance systems for
automobiles. Detection apparatus for medical use; diagnostic, testing
and monitoring equipment for medical use; medical apparatus
for patient monitoring comprising an alarm; temperature
measuring instruments for medical use; detectors for
medical application; sensors used for medical diagnosis;
temperature monitors, sensors and scanners for medical use;
precision sensors for medical use; sensors for medical use
for monitoring patients' vital signs.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
Produits et services
Scientific, optical, optoelectronic, measuring, signaling apparatus and instruments, namely, thermal imaging cameras used in defense and surveillance systems; security surveillance and monitoring apparatus namely, thermography cameras, security cameras, night vision systems primarily comprising night sensors, night cameras, and monitors, thermal imaging cameras used in defense and surveillance systems; devices for safety, security, protection and signaling namely, surveillance cameras; detection apparatus for use in detecting heat, movement, and people, and security instruments in the nature of cameras; switchers in the nature of temperature switches; monitors in the nature of video monitors; microphones; apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; measuring, detection and monitoring instruments, indicators and controllers namely, intelligent and uncooled infrared detectors and sensors; apparatus and instruments for the detection and analysis of human activity not for medical use in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; infrared sensors for signal and video processing, for detecting heat, movement, and people; cameras; thermal temperature sensors; infrared detectors; photosensors, namely, photoelectric sensors; optical sensors; infrared detectors and sensors; thermal detectors and sensors, namely, thermal imaging cameras; heat detectors and sensors, namely, heat imaging cameras; photovoltaic detectors; smart sensors and detectors, namely, temperature sensors composed of recorded software for monitoring and electronic functions in the nature of sensing and detecting; thermostats; infrared imaging retinas not for medical use in the nature of infrared detectors; recorded software for monitoring the environment, access and security of buildings; components for the aforesaid instruments, namely, semiconductor and optoelectronic components in the nature of uncooled infrared detectors and sensors; Electronic apparatus, devices and parts for optical receivers and transmitters, namely, electronic components, electronic integrated circuits, microprocessors, electronic cards for processing images built into optical and optoelectronic apparatus; Apparatus for temperature control and regulation for vehicles and vehicle engines, namely, thermostats; video cameras for vehicles; sensors and detectors of objects or persons for vehicles in the nature of vehicle safety equipment, namely, back-up sensors and cameras; radar equipment for vehicles, namely, radar object detectors for use on vehicles; driver assistance systems for automobiles namely, safety and driving assistant system for mobile vehicles and vessels comprised of electronic proximity sensors and switches, high-resolution cameras, integrated circuits for the purpose of imaging processing, and display monitors Medical apparatus for monitoring vital signs of patients for use in telemedicine and remote monitoring of patients; diagnostic, testing and monitoring equipment for medical use, namely, sensors for monitoring body heat, blood properties and respiratory events; patient monitoring sensors and alarms; temperature measuring instruments for medical use namely, clinical thermometers; detectors for medical application namely, diagnosis of skin cancer; sensors for medical use for imaging and physiological characterization of internal or external local body areas; sensors used for medical diagnosis, namely, clinical thermometers; temperature monitors, sensors and scanners for medical use namely, clinical thermometers; precision sensors for medical use, namely, biofeedback sensors; sensors for medical use, namely, sensors in the nature of medical apparatus for monitoring vital signs of patients
90.
Detection of bad pixels in an infrared image-capturing apparatus
The invention relates to a method for detecting bad pixels from a pixel array of a device, for capturing an image, that is sensitive to infrared radiation. The method includes: receiving an input image captured by the pixel system, and calculating a score for a plurality of target pixels including at least some of the pixels from the input image. The score for each target pixel is generated on the basis of k pixels of the input image that are selected in a window of H by H pixels around the target pixel. H is an odd integer greater than or equal to 3, and k is an integer between 2 and 5. Each pixel, from the set formed of the k pixels and the target pixel, share at least one border or corner with another pixel from said set, and the values of the k pixels are at respective distances from the value of the target pixel, the k pixels being selected on the basis of the k distances. The method also includes detecting that at least one of the target pixels is a bad pixel on the basis of the calculated scores.
H04N 5/367 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse appliqué aux défauts, p.ex. pixels non réactifs
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/365 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, optoelectronic, measuring, signaling
apparatus and instruments; security surveillance and
monitoring apparatus; devices for safety, security,
protection and signaling; measuring, detection and
monitoring instruments, indicators and controllers;
apparatus and instruments for the detection and analysis of
human activity not for medical use; sensors; detectors;
photosensors; optical detectors and sensors; infrared
detectors and sensors; thermal detectors and sensors; heat
detectors and sensors; smart sensors and detectors, i.e.,
which include integrated software and electronic functions;
thermostats; infrared imaging retinas not for medical use;
software; software for monitoring the environment, access
and security of buildings; components, namely, semiconductor
or optoelectronic components; electronic apparatus, devices
and parts, namely, electronic components, electronic
integrated circuits, microprocessors, electronic cards built
into optical and optoelectronic apparatus.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, optoelectronic, measuring, signaling apparatus and instruments namely, thermal imaging apparatus used in defense and surveillance systems; security surveillance and monitoring apparatus, namely detection apparatus for use in detecting heat, metal, movement, and people for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, energy saving devices ; devices for safety, security, protection and signaling namely, imaging apparatus, surveillance cameras, detection apparatus for use in detecting heat, movement, and people, and security instruments in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; measuring, detection and monitoring instruments, indicators and controllers namely, intelligent and uncooled infrared detectors and sensors; apparatus and instruments for the detection and analysis of human activity not for medical use, in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; infrared sensors for signal and video processing, for detecting heat, movement, and people; infrared detectors; photosensors for heat detection purposes; optical detectors for temperature monitoring and optical sensors; infrared detectors and sensors; thermal temperature detectors and sensors; heat temperature detectors and sensors; smart sensors and detectors, for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, energy saving devices, which include integrated software and electronic functions; thermostats; infrared imaging retinas not for medical use sensors and arrays, namely linear and two dimensional detectors and sensors for signal and video processing; software for use in database management and for use in assisting in the management of data in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; software for monitoring the environment, and for providing access and the security of buildings; components, namely, semiconductor or optoelectronic components namely, uncooled infrared detectors and sensors; electronic apparatus, devices and parts, namely, electronic components in the nature of uncooled infrared detectors and sensors and bolometers, electronic integrated circuits, microprocessors, and electronic circuit cards built into optical and optoelectronic apparatus
93.
Correction of bad pixels in an infrared image-capturing apparatus
The invention relates to a method for detecting bad pixels from a pixel array of a device, for capturing an image, that is sensitive to infrared radiation. The method includes: receiving an input image captured by the pixel system, and calculating a score for a plurality of target pixels including at least some of the pixels from the input image. The score for each target pixel is generated on the basis of k pixels of the input image that are selected in a window of H by H pixels around the target pixel. H is an odd integer greater than or equal to 3, and k is an integer between 2 and 5. Each pixel, from the set formed of the k pixels and the target pixel, share at least one border or corner with another pixel from said set, and the values of the k pixels are at respective distances from the value of the target pixel, the k pixels being selected on the basis of the k distances. The method also includes detecting that at least one of the target pixels is a bad pixel on the basis of the calculated scores.
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/367 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse appliqué aux défauts, p.ex. pixels non réactifs
H04N 5/365 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, measuring, signaling apparatus and
instruments; devices for safety, security, protection and
signaling; measuring, detection and monitoring instruments,
indicators and controllers; apparatus and instruments for
the detection and analysis of human activity; sensors;
detectors; thermal sensors; heat sensors; temperature
sensors; thermostats; security surveillance and monitoring
apparatus; software; software for monitoring the
environment, access and security of buildings.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Scientific, optical, measuring, signaling apparatus and instruments, namely, thermal imaging apparatus used in defense and surveillance systems; devices for safety, security, protection and signaling, namely, imaging apparatus, surveillance cameras, detection apparatus for use in detecting heat, movement, and people, and security instruments in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; measuring, detection and monitoring instruments, indicators and controllers, namely, intelligent and uncooled infrared detectors and sensors; apparatus and instruments for the detection and analysis of human activity, in the nature of cameras, switchers in the nature of temperature switches, monitors in the nature of video monitors, microphones, and apparatus for recording data, sound, and images all for use in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; infrared sensors for signal and video processing, for detecting heat, movement, and people; infrared detectors; thermal temperature sensors; heat temperature sensors; temperature sensors; thermostats; security surveillance and monitoring apparatus, namely, thermography cameras, security cameras, night vision systems primarily comprising night sensors, night cameras, power sources, communication means, monitors and operating software, thermal imaging apparatus used in defense and surveillance systems; software for use in database management and for use in assisting in the management of data in thermography, surveillance, security, military operations, transportation and road safety, firefighting, people counting, and energy saving devices; software for monitoring the environment, access and security of buildings
96.
Device for detecting electromagnetic radiation comprising a raised electrical connection pad
A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
The detection device comprises a cold finger which performs thermal connection between a detector fitted on a cooling plate and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the hafnium-based amorphous metal alloy. Advantageously, the whole of the cold finger is made from the hafnium-based amorphous metal alloy.
G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
98.
Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter
A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.
Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
09 - Appareils et instruments scientifiques et électriques
Produits et services
Electronic apparatus, devices and parts, namely, electronic
components, electronic integrated circuits, microprocessors,
electronic cards built into optical and optoelectronic
apparatus; optical and optoelectronic apparatus, optical
and optoelectronic devices and units, namely, optical
instruments, optoelectronics, photodetectors, optical
detectors and sensors, detectors and sensors, in particular
infrared sensors and detectors, components, namely,
semiconductor or optoelectronic components, infrared imaging
retinas, smart sensors and detectors, i.e. which include
integrated software and electronic functions.
100.
Detection device comprising an improved cold finger
The detection device comprises a cold finger which performs the thermal connection between a detector and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the amorphous metal alloy. Advantageously, the whole of the cold finger is made from the amorphous metal alloy.
G01J 5/06 - Dispositions pour éliminer les effets des radiations perturbatricesDispositions pour compenser les changements de la sensibilité
H01L 31/024 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de température
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
C22C 5/04 - Alliages à base d'un métal du groupe du platine
