The present invention relates to a bulk acoustic wave resonator assembly and a manufacturing method therefor. The assembly comprises: two adjacent bulk acoustic wave resonators arranged on a substrate, wherein bottom electrodes of the two adjacent bulk acoustic wave resonators comprise a first bottom electrode and a second bottom electrode which are electrically connected to each other, and an acoustic mirror cavity is defined between the first bottom electrode and the second bottom electrode; and a common release hole, wherein the acoustic mirror cavity of the two adjacent bulk acoustic wave resonators is in communication with the common release hole through a corresponding release channel, wherein in a cross-section that goes through the common release hole and the release channel in communication with the common release hole and that is parallel to the thickness direction of the assembly, the bottom electrodes of the two adjacent bulk acoustic wave resonators are spaced apart from each other. The present invention also relates to a filter and an electronic device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/205 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
The present invention relates to a filter, comprising: a first-stage resonator close to a signal input end of the filter and comprising at least one resonator, wherein the shape of an effective region of the resonator is a polygon; at least one side of the polygon is a signal input side of the resonator, at least another side of the polygon is a signal output side of the resonator, and the signal input side and the signal output side define a fundamental polygon in the polygon; in the fundamental polygon, the ratio of the sum of the side lengths of the signal input side and the signal output side of the resonator to the sum of the side lengths of other sides defines the aspect ratio of the resonator, and the aspect ratio of the resonator ranges from 1 to 4. The present invention further relates to a multiplexer comprising the filter and relates to an electronic device comprising the filter or the multiplexer.
The present application relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. An edge of an effective area of the resonator is provided with a protruding structure, and an angle of an inner end of the protruding structure is within the range of 25°-60°. The present application also relates to a method for improving performance of a bulk acoustic wave resonator. The method comprises the steps: providing a protruding structure at an edge of an effective area of the resonator, and selecting an angle of an inner end of the protruding structure, so as to smooth the frequency-impedance curve of the resonator in an area starting at 30 MHz at the end of a parasitic area, or the part of the 60-80 MHz interval below a series resonance frequency. The present application also relates to a filter and an electronic device.
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
4.
BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, an acoustic mirror, a top electrode, and a piezoelectric layer. The bottom electrode comprises a first electrode layer and a second electrode layer, a gap layer is arranged between the first electrode layer and the second electrode layer, the gap layer defines the acoustic mirror of the resonator, and a part of the second electrode layer is located above the gap layer; and a protrusion structure and/or a recess structure is formed on the upper surface of the second electrode layer along an effective area of the resonator. The present invention also relates to a filter and an electronic device.
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode. The lower surface of the piezoelectric layer is provided with piezoelectric layer lower recesses and/or piezoelectric layer lower protrusions; the depth of each piezoelectric layer lower recess or the height of each piezoelectric layer lower protrusion is not greater than λ/120, λ being the wavelength of acoustic waves in a bottom electrode material at the series resonance frequency of the resonator, or the resonant frequency of the resonator is not greater than 3.5 GHz; the lower surface of the piezoelectric layer is provided with piezoelectric layer lower recesses and/or piezoelectric layer lower protrusions; the depth of each piezoelectric layer lower recess or the height of each piezoelectric layer lower protrusion is not greater than 300 Å. The present invention further relates to a filter and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
6.
BULK ACOUSTIC RESONATOR COMPRISING GAP ELECTRODE, FILTER AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic resonator, comprising a substrate, a bottom electrode, a top electrode, an acoustic mirror, and a piezoelectric layer. The bottom electrode is a gap electrode comprising a gap layer, the gap layer forming the acoustic mirror. An overlapping area among the top electrode, the bottom electrode, the piezoelectric layer and the acoustic mirror in the thickness direction of the resonator defines an effective area of the resonator. The resonator further comprises a first seed layer, with at least a part of the first seed layer defining an upper boundary of the gap layer. At an electrode connection end of the bottom electrode, there is a first distance a between an edge of the first seed layer and an edge of the effective area in a horizontal direction; and at a non-electrode connection end of the bottom electrode, there is a second distance b between the edge of the first seed layer and the edge of the effective area in the horizontal direction, wherein the value of a and/or b is not less than -2.0 μm. Further disclosed in the present invention are a filter and an electronic device.
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, an acoustic mirror, a top electrode, and a piezoelectric layer. The bottom electrode at least comprises a first electrode layer and a second electrode layer which are arranged in a thickness direction of the resonator. A gap layer is provided between the first electrode layer and the second electrode layer, and the acoustic mirror of the resonator is defined by the gap layer. The piezoelectric layer comprises a first piezoelectric layer and a second piezoelectric layer. The second piezoelectric layer is located on an upper side of the first piezoelectric layer, and an end portion of the second piezoelectric layer forms a suspension wing structure along an effective area of the resonator. A first acoustic impedance mismatch structure is defined between a lower surface of the suspension wing structure and an upper surface of the first piezoelectric layer. The present invention further relates to a filter and an electronic device.
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
8.
BULK ACOUSTIC WAVE RESONATOR HAVING PLURALITY OF BOTTOM ELECTRODE LAYERS, FILTER AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic wave resonator and a fabrication method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises a plurality of electrode layers, the plurality of electrode layers at least comprise a first electrode layer and a second electrode layer provided in the thickness direction of the resonator, and the second electrode layer covers at least part of the upper side of the first electrode layer. The resonator further comprises a cover layer, and on the outer side of a non-electrode connection end of the bottom electrode, the upper surface of the cover layer and the upper surface of the second electrode layer are staggered in the height direction of the resonator. The present invention also relates to a filter and an electronic device.
The present invention relates to a bulk acoustic wave resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises a plurality of electrode layers; the plurality of electrode layers comprise at least a first electrode layer and a second electrode layer that are arranged in a thickness direction of the resonator; the first electrode layer is closer to the substrate than the second electrode layer; and the first electrode layer is a metal layer containing aluminum. At a non-connecting electrode end of the bottom electrode, an end face of the first electrode layer is covered by the second electrode layer. An acoustic mirror of the resonator can be an acoustic mirror cavity. The resonator can further comprise a block layer, the first electrode layer covers the block layer, and the block layer defines an upper boundary of the acoustic mirror cavity. The present invention further relates to a filter and an electronic apparatus.
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode and a piezoelectric layer, wherein the bottom electrode comprises a plurality of electrode layers, the plurality of electrode layers at least comprise a first electrode layer and a second electrode layer, which are arranged in the thickness direction of the resonator, and the materials of the first electrode layer and the second electrode layer are different; and at a non-electrode-connection end of the bottom electrode, an end face of the first electrode layer is covered by the second electrode layer. The present invention further relates to a filter and an electronic device.
The present invention relates to a film bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises multiple electrode layers, the multiple electrode layers at least comprise a first electrode layer and a second electrode layer provided in a thickness direction of the resonator, and the first electrode layer and the second electrode layer are made of different materials. The resonator further comprises multiple barrier layers, which comprise at least a first barrier layer and a second barrier layer. The first electrode layer covers at least a part of the upper side of the first barrier layer in a surface contact manner, and the second electrode layer covers at least a part of the upper side of the second barrier layer in a surface contact manner. The present invention also relates to a filter and an electronic device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
The present invention relates to a bulk acoustic resonator, which comprises a substrate, a bottom electrode, a top electrode, an acoustic mirror, and a piezoelectric layer; the substrate comprises a silicon carbide substrate portion, and the silicon carbide substrate portion defines an upper side of the substrate; and the acoustic mirror of the resonator is arranged above an upper side of the silicon carbide substrate portion. The present invention further relates to a bulk acoustic resonator, which comprises a substrate, a bottom electrode, a top electrode, an acoustic mirror, and a piezoelectric layer; the substrate comprises a silicon carbide substrate portion, and the silicon carbide substrate portion defines an upper side of the substrate; and the resistivity of the silicon carbide substrate portion is greater than 1E6 Ω⋅cm. The present invention also relates to a filter and an electronic device.
The present invention relates to a bulk acoustic resonator, comprising: a substrate; a piezoelectric layer; an acoustic mirror; a bottom electrode; a top electrode; and a single-crystal piezoelectric layer provided between the bottom electrode and the top electrode, wherein a support structure is provided between a lower surface of the piezoelectric layer and an upper surface of the substrate, and the piezoelectric layer is arranged substantially parallel to the substrate; and the bottom electrode is provided with an acoustic interference structure. The present invention further relates to a filter and an electronic device.
The present invention relates to a bulk acoustic resonator, wherein a piezoelectric layer of the resonator is a single-crystal lithium niobate piezoelectric layer or a single-crystal lithium tantalate piezoelectric layer; and the electromechanical coupling coefficient of the resonator is not less than 9%. The present invention further relates to a manufacturing method for the bulk acoustic resonator. The electromechanical coupling coefficient of the resonator is not less than 9%. The method comprises the steps of: providing a POI wafer, wherein the POI wafer comprises a substrate, a single-crystal piezoelectric layer, and an insulating layer that is arranged between a first side of the single-crystal piezoelectric layer and the substrate, and the piezoelectric layer is a single-crystal lithium niobate piezoelectric layer or a single-crystal lithium tantalate piezoelectric layer; and removing the substrate and at least part of the insulating layer, wherein during the process of removing the substrate, the insulating layer serves as a barrier layer for protecting the piezoelectric layer, the at least part of the insulating layer is removed to expose the piezoelectric layer, and the insulating layer of the piezoelectric layer that corresponds to an effective area of a resonator is removed. The present invention further relates to a filter and an electronic device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
15.
BULK ACOUSTIC WAVE RESONATOR HAVING THICKENED ELECTRODE, FILTER, AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; a resonant structure, which comprises a piezoelectric layer, a bottom electrode, and a top electrode; and an acoustic mirror. A support layer is provided between the substrate and the resonant structure, and the piezoelectric layer is a single-crystal piezoelectric layer arranged substantially parallel to the substrate. The resonator comprises a first conductive structure and/or a second conductive structure, the first conductive structure is stacked with and electrically connected to an electrical connection end of the bottom electrode, and the second conductive structure is stacked with and electrically connected to an electrical connection end of the top electrode. An inner end of the first conductive structure is horizontally located on an outer side of the boundary of an effective region of the resonator or flush with the boundary of the effective region, and an inner end of the second conductive structure is horizontally located on an outer side of the boundary of the effective region of the resonator or flush with the boundary of the effective region. The present invention also relates to a filter and an electronic device.
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein a conductive layer is further provided on the edge, surrounding an effective area of the resonator, of the upper side of the top electrode, and the conductive layer is electrically connected to the top electrode in an electric connection area of the upper side of the top electrode. The resonator further comprises a temperature compensation layer; and in the horizontal direction, the distance between the outer end of the temperature compensation layer and the effective area is not less than -1 μm. The present invention further relates to a manufacturing method for a bulk acoustic resonator, a filter, and an electronic device.
The present invention relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer. An overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer, and the top electrode in the thickness direction of the resonator forms an effective area of the resonator; a conductive layer is further provided on the edge of the upper side of the top electrode surrounding the effective area; the conductive layer is electrically connected to the top electrode in an electrical connecting area of the upper side of the top electrode; the resonator further comprises a gap layer or a non-conductive dielectric layer; in a projection parallel to the thickness direction of the resonator, at least a part of the gap layer or the non-conductive dielectric layer is below the electrical connecting area; and the thickness of the gap layer or the non-conductive dielectric layer is within the range of 1000-5000 Å. The present invention further relates to a manufacturing method for the bulk acoustic resonator, a filter, and an electronic device.
Provided in the present invention are an MEMS loudspeaker and a manufacturing method therefor, and an electronic device. The MEMS loudspeaker has better performance. An actuator of the loudspeaker is provided with a plurality of strip-shaped branches that are arranged in parallel in a vibration direction, wherein the included angle between a side face, which has a stacked structure, of a silicon-based framework of the strip-shaped branch and an adjacent side face is between 70° and 110° or between 80° and 100°; and/or the roughness of the side face, which has a stacked structure, of the silicon-based framework is less than 100 nm or less than 10 nm.
An MEMS speaker and an electronic device. The MEMS speaker has better performance. The MEMS speaker has an upper bottom surface (C2) and a lower bottom surface (C1) parallel to each other with a side wall (D1) therebetween; one or more of the upper bottom surface (C2), the lower bottom surface (C1), and the side wall (D1) have through holes (Vj, Uk); an actuator in the speaker is connected to the side wall (D1), and the vibration direction is generally parallel to the upper bottom surface (C2) and the lower bottom surface (C1); the actuator has a plurality of parallel plate-shaped branches (Fn).
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode. A lower surface of the piezoelectric layer is provided with a piezoelectric layer lower recess and/or a piezoelectric layer lower protrusion, and an upper surface of the piezoelectric layer is a flat surface at a position corresponding to the piezoelectric layer lower recess and/or the piezoelectric layer lower protrusion. The present invention further relates to a filter and an electronic device.
A dicing method for a semiconductor component, the method comprising: a first step of providing a first substrate (202), a second substrate (201), a sealing layer, and MEMS devices (103), the sealing layer being arranged between a lower side of the first substrate (202) and an upper side of the second substrate (201), the first substrate, the second substrate and the sealing layer defining or enclosing accommodating spaces, the MEMS devices (103) being arranged in the corresponding accommodating spaces, the sealing layer comprising a first sealing layer (109) arranged on the first substrate and a second sealing layer (102) arranged on the second substrate, and the first sealing layer (109) being adapted to be connected to the second sealing layer (102) in a sealed manner; a second step of removing a predetermined portion (110) of a peripheral region of the first substrate to expose the second sealing layer corresponding to the predetermined portion; and a third step of dicing, the second sealing layer corresponding to the predetermined portion as an alignment mark. The present invention further relates to a semiconductor component. The dicing method for a semiconductor component avoids wasting the wafer area and prevents a bonding failure.
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
22.
BULK ACOUSTIC RESONATOR HAVING TUNGSTEN ELECTRODE, FILTER, AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, provided between the bottom electrode and the top electrode. The piezoelectric layer is a scandium-doped aluminum nitride piezoelectric layer, the top electrode and/or the bottom electrode are tungsten electrodes containing metal tungsten, and the scandium-doped concentration of the piezoelectric layer is not less than 12%. The present invention further relates to a filter having the resonator, and an electronic device having the filter or resonator.
The present invention relates to a bulk acoustic wave resonator and a manufacturing method therefor. The resonator comprises: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein the piezoelectric layer is a flat piezoelectric layer; a support layer is provided between the substrate and the piezoelectric layer; the piezoelectric layer is a flat piezoelectric layer; the piezoelectric layer and the substrate are separated from each other in a thickness direction of the resonator and are generally arranged in parallel; and a highly-linear material layer is provided at an outer side of a non-electrode connecting end of the bottom electrode in a horizontal direction. The present invention further relates to a filter and an electronic device.
The present invention relates to a resonator and a manufacturing method therefor. The resonator comprises: a substrate; an acoustic mirror; a resonant structure, the resonant structure comprising a single crystal piezoelectric layer and an electrode layer, and the piezoelectric layer being arranged substantially parallel to the substrate; and a support structure, arranged between the substrate and the resonant structure, wherein the support structure defines at least part of the boundary of the acoustic mirror in a horizontal direction, and the upper surface of the support structure is a flat surface. The present invention also relates to a filter and an electronic device.
Disclosed in the present invention are a duplexer, a method for suppressing high-order resonance of a duplexer, and an electronic device. The duplexer comprises: a high-frequency end filter, a low-frequency end filter, and a high-order resonance suppression circuit, wherein series resonators in the high-frequency end filter are stacked into an approximately symmetric structure, and series resonators in the low-frequency end filter are stacked into an asymmetric structure, wherein a second high-order resonant pseudo-passband of the low-frequency end filter coincides with a second high-order resonant pseudo-passband of the high-frequency end filter, and the low-frequency end filter has a first high-order resonant pseudo-passband. The high-order resonance suppression circuit is arranged between an antenna end and a common end of the duplexer in parallel; the high-order resonance suppression circuit has a first suppression zero point and a second suppression zero point; the first suppression zero point is located at the first high-order resonant pseudo-passband of the low-frequency end filter, and the second suppression zero point is located at the second high-order resonant pseudo-passband at the coincidence part between the low-frequency end filter and the high-frequency end filter.
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
26.
BULK ACOUSTIC RESONATOR, FILTER, AND ELECTRONIC DEVICE
The present invention relates to a bulk acoustic resonator, comprising a substrate, a top electrode, a piezoelectric layer, a bottom electrode, and an acoustic mirror. A support layer is disposed between the substrate and a resonant structure, and the piezoelectric layer is a single crystal piezoelectric layer arranged roughly parallel to the substrate. In one first cross section that is parallel to the thickness direction of a resonator and passes through a non-electrically connected end of the bottom electrode and a non-electrically connected end of the top electrode, a portion of an outer end of the non-electrically connected end of the bottom electrode is covered by the support layer, at least a portion of the piezoelectric layer at the non-electrically connected end of the bottom electrode is removed, and at least a portion of an upper surface of the non-electrically connected end of the bottom electrode is flush with an upper surface of the support layer. The present invention also relates to a filter and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
27.
FILTER HAVING SCANDIUM-DOPED ALUMINUM NITRIDE AS PIEZOELECTRIC LAYER AND ELECTRONIC DEVICE
The present invention relates to a filter comprising a plurality of bulk acoustic resonators. Each bulk acoustic resonator comprises a piezoelectric layer; the piezoelectric layer is scandium-doped aluminum nitride; the doping concentration of scandium is within a range of 10%-14%. The filter is a filter of a frequency band Band1, the thickness range of the piezoelectric layer is within a range from 0.503 μm to 0.696 μm at a transmitting end of the filter, and the thickness range of the piezoelectric layer is within a range from 0.439 μm to 0.647 μm at a receiving end of the filter; or the filter is a filter of a frequency band Band3, the thickness range of the piezoelectric layer is within a range from 0.542 μm to 0.759 μm at the transmitting end of the filter, and the thickness range of the piezoelectric layer is within a range from 0.519 μm to 0.72 μm at the receiving end of the filter. The present invention also relates to an electronic device comprising the filter.
Disclosed in the present invention are a filter, a duplexer, a multiplexer, and an electronic device. In the embodiments of the present invention, at least two resonators in a filter have a dual-layer bottom electrode structure, and an electrical isolation trench is provided on a first bottom electrode of at least one resonator, such that an MIM capacitor is formed between the first bottom electrode and a second bottom electrode of the resonator, and the MIM capacitor is integrated at a specific position of the filter having a ladder-shaped structure by means of a specific connection manner, thus an integrated capacitor filter chip is implemented without increasing layers and the area of the chip.
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer, comprising at least a first layer and a second layer that are adjacent to and overlap with one another in the thickness direction, the first layer having a first thickness, and the second layer having a second thickness; and a top electrode. At least one among the first layer and the second layer is a single crystal piezoelectric layer, the resonator has an electromechanical coupling coefficient Kt2, and Kt2>10%. The present invention also relates to a method for manufacturing a bulk acoustic wave resonator, a filter, and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
30.
SINGLE-CRYSTAL ACOUSTIC RESONATOR, FILTER, AND ELECTRONIC DEVICE
Provided is a bulk acoustic resonator, comprising: a substrate (100); an acoustic mirror; a bottom electrode (130); a top electrode (140); and a single-crystal piezoelectric layer (120), which is disposed between the bottom electrode (130) and the top electrode (140). A support structure (110) is disposed between the lower surface of the piezoelectric layer (120) and the upper surface of the substrate (100), the piezoelectric layer (120) being arranged roughly parallel to the substrate (100); the bottom electrode (130) and/or the top electrode (140) is a gap electrode, and the gap electrode has at least one gap layer (1305, 1405). In the thickness direction of the gap electrode, there is a distance between the gap layer (1305, 1405) and both the top surface and bottom surface of the gap electrode; and the support structure (110) comprises a recess, the bottom electrode (130) being disposed in the recess. Further provided are a filter and an electronic device.
Disclosed are a multiplexer, a method for improving the isolation of a multiplexer, and a communication device, wherein there is better isolation between filters in the multiplexer. The multiplexer includes two or more filters connected in parallel, wherein each of the filters includes a plurality of piezoelectric acoustic wave resonators, and the piezoelectric acoustic wave resonators include grounded inductors. The multiplexer has at least one capacitive structure, two poles of the capacitive structure are respectively connected to distal ends of the two grounded inductors, the two grounded inductors belong to different filters, and there is mutual inductance between the two grounded inductors.
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises: a substrate, an acoustic mirror, a bottom electrode, a top electrode, a piezoelectric layer, which is arranged between the bottom electrode and the top electrode, and a temperature compensation layer structure, which is arranged between the bottom electrode and the piezoelectric layer, wherein the temperature compensation layer structure comprises a temperature compensation layer. The resonator further comprises a protection layer, wherein at a non-electrode-connection end of the top electrode, the protection layer covers an upper surface of the temperature compensation layer structure along at least a part of the temperature compensation layer structure in a circumferential direction, a part of the upper surface of the temperature compensation layer structure is exposed from an opening defined by an inner edge of the protection layer, and the opening is at least partially located in an effective area of the resonator; and at the non-electrode-connection end of the top electrode, the inner edge of the protection layer is flush with the non-electrode-connection end of the top electrode in a horizontal direction, or is located on an inner side of the non-electrode-connection end of the top electrode. The present invention further relates to a filter and an electronic device.
A method, an acoustic wave filter, a multiplexer, and a communication device for improving nonlinear performance are disclosed. According to the method, the acoustic wave filter comprises a plurality of piezoelectric acoustic resonators and at least one set of parallel split resonator groups is included. The method comprises one or more of the following steps: differentiating the structure of each resonator wire in the parallel split resonator group, so that a non-linear component generated by each resonator is at least partially cancelled; changing the area and/or shape of each resonator in the parallel split resonator group, such that the non-linear component generated by each resonator is at least partially cancelled; and adding a conductor to the filter, so as to at least partially cancel the non-linear component generated by each resonator.
Provided by the present invention are an acoustic wave resonator having a temperature compensation layer, and a filter and an electronic device; a parameter such as the electrode piezoelectric ratio is introduced and the manner of calculation is given; the layers of the resonator are arranged such that when the value of the electrode piezoelectric ratio meets certain conditions, the resonator can have better performance.
Disclosed are an acoustic wave filter, a multiplexer, and a communication device, which contribute to improve nonlinear performance. The acoustic wave filter comprises a plurality of piezoelectric acoustic resonators, and at least one set of series split resonator groups is included. The set of series split resonator groups comprises at least a first split resonator and a second split resonator, one or more first additional resonators being connected in parallel to the first split resonator.
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode, wherein the piezoelectric layer is a doped piezoelectric layer, and the top electrode and/or the bottom electrode is a tungsten electrode containing metal tungsten. The top electrode and/or the bottom electrode is a single-layer electrode made of metal tungsten or a single-layer electrode made of a tungsten alloy. Alternatively, the top electrode and/or the bottom electrode is a stacked electrode comprising at least two electrode layers made of different materials and arranged in a stacked manner. The at least two electrode layers include at least one tungsten electrode layer. The tungsten electrode layer is an electrode layer made of metal tungsten or an electrode layer made of a tungsten alloy. The present invention also relates to a filter having the above resonator and an electronic device having the filter or the resonator.
Disclosed in the present invention is a microelectromechanical system (MEMS) ultrasonic transducer-based miniature loudspeaker, comprising: a single or a plurality of MEMS ultrasonic transducers, configured to send an ultrasonic pulse or an ultrasonic wave packet sequence according to an input electrical control signal; and a control circuit, configured to output a discrete or approximately discrete electrical control signal, wherein the electrical control signal enables the ultrasonic pulse or the ultrasonic wave packet sequence to form an acoustic envelope approximating a target audio waveform after being superimposed in a time domain. The MEMS ultrasonic transducer-based miniature loudspeaker of the present invention has a small distortion in a final synthetic envelope, a high sound pressure sensitivity and a high energy conversion efficiency.
H04R 1/40 - Dispositions pour obtenir la fréquence désirée ou les caractéristiques directionnelles pour obtenir la caractéristique directionnelle désirée uniquement en combinant plusieurs transducteurs identiques
38.
MULTIPLEXER, METHOD FOR IMPROVING ISOLATION OF MULTIPLEXER, AND COMMUNICATION DEVICE
The present invention provides a method for adjusting a filter circuit, a filter, a multiplexer, and a communication device, helping to improve the isolation of the interior of the multiplexer and improving the roll-off performance of each filter in the multiplexer. The multiplexer comprises a plurality of bulk acoustic wave filters, each filter comprises at least two earth inductors, front-stage earth inductors of the at least two earth inductors are located at the middle part of a package substrate of the multiplexer, and rear-stage earth inductors are located on both sides of the package substrate. Input matching inductors of the plurality of filters are located at the middle part of the package substrate, and output matching inductors are located on both sides of the package substrate.
Disclosed in the present invention are an acoustic wave filter, a multiplexer, and a communication device. A plurality of series resonators and a plurality of parallel resonators are provided between the input end and the output end of the acoustic wave filter; each parallel branch has an inductor; the inductors are inductively coupled; and a capacitor is bridged between a pair of parallel branches of the filter; both ends of the capacitor are located between the resonators and the inductors in the parallel branches where the ends are located, respectively. The technical solution of the present invention facilitates improvement of the out-of-band suppression performance of the acoustic wave filter.
Disclosed are a filter comprising a doped resonator, and a multiplexer and a communication device, wherein the doped resonator and a non-doped resonator are allocated to different positions in a filter topology, thereby saving the cost, reducing the package size and improving the filter performance.
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/205 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
41.
BULK ACOUSTIC RESONATOR AND ASSEMBLY, FILTER, AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic lens, a bottom electrode, a piezoelectric layer, and a top electrode, wherein the resonator further comprises an acoustic resistance layer arranged between a first layer and a second layer, an inner edge of the acoustic resistance layer being located on the inner side of the boundary of the acoustic lens in the horizontal direction, and the acoustic resistance of the acoustic resistance layer being different from the acoustic resistance of the piezoelectric layer; and the resonator further comprises a protruding structure. Furthermore, the inner edge of the acoustic resistance layer is located on the outer side of the inner edge of the protruding structure in the horizontal direction, or the inner edge of the acoustic resistance layer is flush with the inner edge of the protruding structure in the horizontal direction. The present disclosure further relates to a bulk acoustic resonator assembly, a filter, and an electronic device.
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein the piezoelectric layer comprises a first layer and a second layer, the second layer being above the first layer in the thickness direction of the resonator. The resonator further comprises a connection end acoustic resistance layer, which is arranged at an electrode connection end of the top electrode, wherein an inner edge of the connection end acoustic resistance layer is located at an inner side of a boundary of the acoustic mirror in a horizontal direction; and an outer end edge of the first layer and/or the second layer is located at an inner side of an outer edge of the connection end acoustic resistance layer in the horizontal direction. The present disclosure further relates to a bulk acoustic resonator assembly, a filter and an electronic device.
The present disclosure relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer, and a top electrode wherein the piezoelectric layer is a piezoelectric layer comprising a doping element, the doping element has a corresponding doping concentration, the resonator has a layer thickness ratio E/P, the resonator has an electromechanical coupling coefficient Kt2, and the doping concentration not less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2when the layer thickness ratio of the resonator E/P = 0.75. The present disclosure also relates to a doping concentration determination method, the doping concentration being a doping concentration of a doping element of a piezoelectric layer of a bulk acoustic resonator, the resonator having an electromechanical coupling coefficient Kt2, and the resonator having a layer thickness ratio E/P, the method comprising the steps of: on the basis of the layer thickness ratio E/P, selecting the doping concentration to be not less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2 when the layer thickness ratio of the resonator E/P = 0.75. The present disclosure also relates to a filter and an electronic device.
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer, and a top electrode. The resonator has a resonance frequency lower than 2.5 GHz, and a layer thickness ratio E/P; the resonator has an electro-mechanical coupling factor Kt2; the doping concentration is not less than a1; and a1 is a doping concentration corresponding to the electro-mechanical coupling factor Kt2when the layer thickness ratio E/P is 1.5. The present disclosure further relates to a doping concentration determining method. The doping concentration is a doping concentration of a doping element of the piezoelectric layer of the bulk acoustic resonator; the resonator has the electro-mechanical coupling factor Kt2; and the resonator has the resonance frequency lower than 2.5 GHz, and the layer thickness ratio E/P. The method comprises the following steps: selecting the doping concentration to be not less than a1 on the basis of a layer thickness ratio E/P, a1 being the doping concentration corresponding to the electro-mechanical coupling factor Kt2 when the layer thickness ratio E/P of the resonator is 1.5. The present disclosure also relates to a filter and an electronic device.
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer, the piezoelectric layer being a piezoelectric layer comprising a doping element, the doping element having a corresponding doping concentration; and a top electrode,wherein the resonator has at resonance frequency higher than 2.5 GHz, and has a layer thickness ratio E/P; the resonator has an electromechanical coupling coefficient Kt2; and the doping concentration is less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2when the layer thickness ratio E/P = 3. The present disclosure also relates to a doping concentration determination method, the doping concentration being a doping concentration of a doping element of a piezoelectric layer of a bulk acoustic resonator, the resonator having an electromechanical coupling coefficient Kt2, the resonator having a resonant frequency higher than 2.5 GHz and having a layer thickness ratio E/P, the method comprising the steps of: on the basis of the layer thickness ratio E/P, selecting the doping concentration to be less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2 when the layer thickness ratio of the resonator E/P = 3. The present disclosure also relates to a filter and an electronic device.
A duplexer design method, a duplexer, a multiplexer, and a communication device. In the method, the thicknesses of lifting portions on a parallel resonator in a common matching unit in a high-frequency filter and a parallel resonator in a post-stage circuit are limited within a reasonable range, so that the minimum deterioration of insertion loss of the high-frequency filter can be achieved under the limiting condition and without affecting insertion loss of a low-frequency filter, and the design flexibility of the duplexer is improved to a certain extent.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
47.
BULK ACOUSTIC RESONATOR AND ASSEMBLY, METHOD FOR ADJUSTING ELECTROMECHANICAL COUPLING COEFFICIENT DIFFERENCE, AND FILTER AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein the piezoelectric layer comprises a first layer and a second layer; an acoustic resistance layer is disposed between the first layer and the second layer; an inner edge of the acoustic resistance layer is on an inner side of the border of the acoustic mirror in a horizontal direction; the acoustic resistance of the acoustic resistance layer is different from that of the piezoelectric layer; and the material of the first layer is different from that of the second layer. The present disclosure further relates to a bulk acoustic resonator assembly, a method for adjusting an electromechanical coupling coefficient of a bulk acoustic resonator, a method for adjusting an electromechanical coupling coefficient difference of a resonator in a bulk acoustic resonator assembly, and a filter and an electronic device.
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein an overlapping region of the top electrode, the piezoelectric layer and the bottom electrode in a thickness direction of the resonator forms an effective region of the resonator; the piezoelectric layer comprises a first layer and a second layer; a voided layer is provided between the first layer and the second layer; the second layer is located above the first layer; an inner edge of the voided layer is located on an inner side of a boundary of the effective region in a horizontal direction; an outer edge of the voided layer is located inside the piezoelectric layer and is defined by the piezoelectric layer; and the second layer is not provided with a specific release path that extends in a thickness direction of the second layer, passes through the second layer and is in direct communication with the voided layer. The present disclosure also relates to a bulk acoustic resonator assembly, a manufacturing method for a bulk acoustic resonator, and a filter and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
49.
BULK ACOUSTIC WAVE RESONATOR HAVING ACOUSTIC RESISTANCE LAYER, AND ASSEMBLY THEREOF AND MANUFACTURING METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode. The overlapping region of the top electrode, the piezoelectric layer, and the bottom electrode in the thickness direction of the resonator constitutes an effective region of the resonator; the piezoelectric layer comprises a first layer and a second layer; an acoustic resistance layer is provided between the first layer and the second layer; the second layer is located above the first layer; the inner edge of the acoustic resistance layer is located at the inner side of the boundary of the acoustic mirror in a horizontal direction; the acoustic resistance of the acoustic resistance layer is different from the acoustic resistance of the piezoelectric layer; and the resonator further comprises a channel or an opening for communicating the acoustic resistance layer with the outside. The present disclosure further relates to a bulk acoustic wave resonator assembly, a method for manufacturing a bulk acoustic wave resonator, a filter, and an electronic device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
50.
FILTER ASSEMBLY AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
The present disclosure relates to a filter assembly and a manufacturing method therefor. The assembly comprises a substrate and multiple filters disposed on the substrate. The multiple filters include a first filter and a second filter disposed adjacent to each other in a horizontal direction. The first filter has a first stack structure formed of multiple film layers. The second filter has a second stack structure formed of multiple film layers. Thicknesses of at least two film layers in the first stack structure are different from thicknesses of corresponding film layers in the second stack structure. The present disclosure also relates to an electronic device comprising the assembly.
H01L 41/08 - Eléments piézo-électriques ou électrostrictifs
H01L 41/22 - Procédés ou appareils spécialement adaptés à l'assemblage, la fabrication ou au traitement de dispositifs piézo-électriques ou électrostrictifs, ou de leurs parties constitutives
H03H 9/205 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 1/00 - Détails de réalisation des réseaux d'impédances dont le mode de fonctionnement électrique n'est pas spécifié ou est applicable à plus d'un type de réseau
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
H01L 27/20 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants magnétostrictifs
51.
METHOD FOR OPTIMISING OUT-OF-BAND SUPPRESSION OF FILTER, AND FILTER, MULTIPLEXER, AND COMMUNICATION DEVICE
The present invention relates to the technical field of filters, and relates in particular to a method for optimising the out-of-band suppression of a filter, and a filter, a multiplexer, and a communication device. In the present method, the effective electromechanical coupling coefficients of a series resonator and a parallel resonator can be flexibly adjusted, not only keeping filter passband coverage unchanged, but also solving the problem of the poor harmonic suppression of low-frequency bulk acoustic wave filters, and also ensuring the suppression balance of harmonic suppression areas.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
52.
TEMPERATURE COMPENSATING FILTER OPTIMIZATION METHOD AND TEMPERATURE COMPENSATING FILTER, MULTIPLEXER, AND COMMUNICATIONS DEVICE
The present invention relates to the technical field of filters, and relates in particular to a temperature compensating filter optimization method, a temperature compensating filter, a multiplexer, and a communication device. In the present method, resonators are divided into multiple groups according to the power density value of each resonator in the filter, the larger the power density value, the thicker a temperature compensation layer of the resonators in the group, so that the filter has better frequency temperature properties, and deterioration of matching characteristics of the filter is also decreased to a certain extent.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
53.
BULK ACOUSTIC RESONATOR WITH TOP ELECTRODE HAVING UPPER AND LOWER GAPS, MANUFACTURING METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE
A bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a base, an acoustic lens, a bottom electrode, a piezoelectric layer, a top electrode, and a covering layer, which at least covers a non-electrode connection end of the top electrode, wherein an overlap area of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic lens in the thickness direction of the resonator forms an effective area of the resonator; and the lower side and the upper side of the non-electrode connection end of the top electrode are respectively provided with a first gap and a second gap along the effective area, the position where the second gap is located is the position where a removed corresponding part of the covering layer and/or the top electrode is located, and the removed corresponding part forms the second gap. The present invention further relates to a filter and an electronic device.
The present invention relates to a bulk acoustic resonator assembly, comprising a substrate and at least two resonators. The at least two resonators are bulk acoustic resonators and are stacked on one side of the substrate in the thickness direction of the substrate; the at least two resonators comprise a first resonator and a second resonator; the second resonator is positioned above the first resonator; the first resonator comprises a first top electrode, a first piezoelectric layer, a first bottom electrode, and a first acoustic mirror; the second resonator comprises a second top electrode, a second piezoelectric layer, a second bottom electrode, and a second acoustic mirror; an acoustic decoupling layer in the form of a cavity is provided between the first top electrode and the second bottom electrode, and the acoustic decoupling layer serves as the second acoustic mirror. The present invention further relates to a manufacturing method for the bulk acoustic resonator assembly, a filter, and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
55.
BULK ACOUSTIC WAVE RESONATOR ASSEMBLY HAVING ACOUSTIC DECOUPLING LAYER, MANUFACTURING METHOD, FILTER, AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic wave resonator assembly, which comprises: a substrate; at least two resonators, the at least two resonators being bulk acoustic wave resonators, and said resonators being stacked in a thickness direction of the substrate on a side of the substrate; the at least two resonators comprise a first resonator and a second resonator, the second resonator is above the first resonator, the first resonator has a first top electrode, a first piezoelectric layer, a first bottom electrode, and a first acoustic mirror, and the second resonator has a second top electrode, a second piezoelectric layer, a second bottom electrode, and a second acoustic mirror, wherein a hollow cavity-type acoustic decoupling layer is arranged between the first top electrode and the second bottom electrode, the acoustic decoupling layer serving as the second acoustic mirror. The present disclosure further relates to a manufacturing method for a bulk acoustic wave resonator assembly, a filter, and an electronic device.
iiiiii - 1; an assembly comprises an antenna port and a plurality of other ports, and the k filters are all connected to the antenna port; in each of the resonator overlapping units, n resonators overlap one another; and the remaining resonator in each of the k filters is an independent resonator, and all the independent resonators overlap one another to form a hybrid overlapping unit, with at least one independent resonator being a resonator which is not adjacent to the other ports. The at least one independent resonator can be adjacent to the antenna port. The present disclosure further relates to an electronic device.
The present invention relates to the technical field of filters, and relates in particular to a filter designing method, a filter, a multiplexer, and a communication device. The method is used to appropriately configure, according to design indexes, the thickness of a raised portion at a connection end and a non-connection end of a top electrode in each of resonators arranged in series, each of resonators arranged in parallel, and a resonator in a bandwidth adjustment unit, thereby improving the insertion loss characteristics of a filter, reducing the insertion loss of the filter, and accordingly reducing production costs and increasing design flexibility to a certain extent.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/13 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
58.
RADIO FREQUENCY MODULE DESIGN METHOD, RADIO FREQUENCY MODULE, AND COMMUNICATION DEVICE
The present invention relates to the technical field of filters, and relates in particular to a radio frequency module design method, a radio frequency module, and a communication device. In the method, a matching network is simplified by changing input impedance of a filter in the radio frequency module and reducing the use of a passive device and the sharing of the passive device, reducing the number of passive devices in the radio frequency module, thereby reducing the size and fabrication costs of a chip and the loss of the passive device. Meanwhile, the power consumption of a power amplifier can be reduced, and the power capacity of a filter can be improved.
The present disclosure relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer provided between the bottom electrode and the top electrode, wherein a first mass load array and a second mass load array are respectively provided on upper and lower sides of the piezoelectric layer. The present disclosure also relates to a filter and an electronic device.
Provided is an MEMS piezoelectric loudspeaker. A loading disk and an actuator of the loudspeaker are stacked, such that the loading disk and the actuator do not occupy each other's positions in a transverse direction, and a larger design space can be thus obtained; and with a limited transverse size of the micro loudspeaker, the actuator and the loading disk have a larger transverse area/size and longitudinal vibration displacement, and therefore, the loudspeaker can have a higher output sound pressure.
The present invention provides an MEMS piezoelectric loudspeaker, comprising a load plate and an actuator. The load plate is polygonal, circular or elliptical. Each branch of the actuator is strip-shaped and is arranged along an extending direction of an edge of the load plate. According to the technical solution of the present invention, the internal space of the loudspeaker is effectively utilized, so that the actuator has a relatively large effective length, the vibration amplitude of the load plate is improved, and the output sound pressure of the loudspeaker is increased.
Disclosed is an MEMS loudspeaker. The MEMS loudspeaker is provided with an upper bottom surface and a lower bottom surface which are parallel to each other, a side wall is arranged therebetween, and a vibration direction of an actuator in the loudspeaker is parallel to the bottom surfaces; and the actuator has a plurality of branches, and the plurality of branches are arranged in one or more layers in the height direction of the loudspeaker. By using the technical solution of the present invention, the internal space of the loudspeaker can be fully used, the volume of air pushed by the the whole space of the loudspeaker is increased, and a sound pressure output of the loudspeaker is improved.
The present disclosure relates to a bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer, wherein an overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator. A conductive layer is also arranged on the upper side of the top electrode and surrounding the edge of the effective area, and is electrically connected to the top electrode. A gap is provided between at least a portion of the bottom surface of the inner end and/or the outer end of the conductive layer and the upper surface of the top electrode to form a suspension structure. The present disclosure also relates to a method for manufacturing the bulk acoustic wave resonator, a filter, and an electronic device.
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
64.
BULK ACOUSTIC RESONATOR HAVING INSERTION LAYER TO INCREASE POWER, AND FILTER AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic resonator. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer, wherein the resonator further comprises a first insertion layer at a connecting edge of the top electrode, the first insertion layer is arranged, in the thickness direction of the resonator, between the top electrode and the substrate, and an edge of the acoustic mirror is located, in the transverse direction of the resonator, between an inner end and an outer end of the first insertion layer; and the resonator further comprises a first non-conductive dielectric layer at the connecting edge of the top electrode, the first non-conductive dielectric layer is arranged, in the thickness direction of the resonator, between the first insertion layer and the top electrode, an inner end of the first non-conductive dielectric layer is located, in the transverse direction, on an inner side of the inner end of the first insertion layer, and an outer end of the first non-conductive dielectric layer is flush, in the transverse direction, with the outer end of the first insertion layer or is located on an outer side of the outer end of the first insertion layer. The present disclosure further relates to a filter and an electronic device.
Disclosed are a filter, a duplexer, a multiplexer and a communication device. The filter is of a trapezoidal structure and comprises one series path and a plurality of parallel branches, a resonator in the filter is an acoustic resonator, characterized in that, the plurality of parallel branches contain one SC circuit, and the SC circuit contains one resonator and an inductor connected in series, a main resonant frequency and a high order resonant frequency of the resonator in the SC circuit are both located outside a passband of the filter; or the SC circuit contains a resonator group and an inductor connected in series, and the resonator group contains a plurality of resonators, among which a resonant frequency of at least one resonator is different from resonant frequencies of the other resonators, and the main resonant frequency and the high order resonant frequency of each resonator are both outside the passband of the filter. The technical solution of the present invention facilitates improvement of the suppression degree of high order resonance of a filter and a multiplexer, and improves the isolation degree of the multiplexer.
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
66.
SEMICONDUCTOR CHIP, MULTIPLEXER, AND COMMUNICATION DEVICE
The present invention relates to the technical field of filters, and in particular, to a semiconductor chip, a multiplexer, and a communication device. In the semiconductor chip, a sealing ring between wafers is isolated from a passive device also using an isolation layer; and the coupling between the sealing ring and the passive device is avoided/reduced by a sealing ring isolation layer, thereby avoiding/reducing the deterioration of the isolation degree of the multiplexer.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
67.
BULK ACOUSTIC WAVE RESONANCE ASSEMBLY AND MANUFACTURING METHOD, FILTER AND ELECTRONIC DEVICE
The present disclosure relates to a bulk acoustic wave resonance assembly, comprising two bulk acoustic wave resonators, including a first resonator and a second resonator, wherein the first resonator is a temperature compensation resonator in which an electrode comprises a temperature compensation layer, and the second resonator is a non-temperature-compensation resonator without a temperature compensation layer; and the temperature drift coefficient of the first resonator is zero, and the difference of the electromechanical coupling coefficient between the second resonator and the first resonator accounts for 30% or above of the value of the electromechanical coupling coefficient of the second resonator. The thickness of a piezoelectric layer of the first resonator may be less than and at least 50% of the thickness of a piezoelectric layer of the second resonator. The present disclosure further discloses a filter having the bulk acoustic wave resonance assembly, and an electronic device having the filter or the bulk acoustic wave resonance assembly.
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
68.
BULK ACOUSTIC WAVE RESONATOR, FILTER, ELECTRONIC DEVICE, AND METHOD FOR ADJUSTING ELECTROMECHANICAL COUPLING COEFFICIENT
The present application relates to a bulk acoustic wave resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer. The top electrode is provided with raised portions at both a top electrode connection end and a non-top electrode connection end, and the top surfaces of the raised portions are above the top surface of an inner side portion of the top electrode; the inner side portion is a convex polygonal area having multiple edges, the raised portions are arranged around the convex polygonal area to form a polygonal electrode frame, and the electrode frame comprises multiple frame edges; the frame edges of the electrode frame have transverse width changes in the acoustic mirror. The present application also relates to a filter, at least one resonator of the filter being the above resonator and having an electromechanical coupling coefficient different from those of other resonators. The present application also relates to an electronic device comprising the above bulk acoustic wave resonator or filter, and a method for adjusting the electromechanical coupling coefficient of the bulk acoustic wave resonator.
The present invention relates to a semiconductor structure having stacked units, comprising: at least two units sequentially stacked in a thickness direction of the semiconductor structure. Each unit comprises a substrate, and an accommodating space is defined between substrates of adjacently stacked upper unit and lower unit; the at least two units comprise an uppermost unit and a lowermost unit, the substrate of at least one of the at least two units, other than the lowermost unit, is a double-sided functional substrate, and the upper and lower sides of the double-sided functional substrate are respectively provided with acoustic devices. The present invention also relates to a manufacturing method for the semiconductor structure having stacked units, and an electronic device having the structure.
A device structure, comprising: a first substrate (1) and a second substrate (4); an encapsulation layer provided between the opposing first and second substrates (1, 4) to define an encapsulation space therebetween; and an MEMS device provided on the first substrate (1) and/or the second substrate (4) and located in the encapsulation space, wherein the encapsulation layer comprises inner sealing layers (2, 3) and an outer sealing layer (8), an annular groove (G) is formed outside of the inner sealing layers (2, 3) and located between the first substrate (1) and the second substrate (4), the annular groove (G) opens outwards, and the outer sealing layer (8) is a metal layer and covers the whole outer sides of the inner sealing layers (2, 3); and the first substrate (1) or the second substrate (4) is provided with a conductive part electrically connected to an in-groove part of the annular groove (G). The device structure reinforces the existing seal ring structure and improves the heat dissipation capacity and power capacity. Also provided is a device structure manufacturing method, a filter and an electronic device.
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p. ex. systèmes micro-électromécaniques [SMEM, MEMS]
71.
RESONATOR ASSEMBLY AND METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
A resonator assembly and a method for manufacturing same, a filter having the resonator assembly, and an electronic device having the filter or the resonator assembly. The resonator assembly comprises a bulk acoustic resonator and a surface acoustic wave resonator, wherein electrode structures of the two resonators are located on the same side of a substrate (100).
H03H 3/007 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques
H03H 3/10 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/15 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif
72.
FILTER ELEMENT, MULTIPLEXER, AND COMMUNICATION DEVICE
A filter element. A filter layout of the filter element comprises multiple resonators constituting a filter, and comprises an input pin, an output pin, and one or more grounding pins. A packaging substrate of the filter element comprises an input pin, an output pin, and one or more grounding pins. A layout structure further comprises a metal connecting line connected to the grounding pins, a part of the metal connecting line closes to the input pin, and the other part closes to the output pin, so that coupling capacitance is formed between an input end and an output end of the filter; and/or the inner portion or the surface of the packaging substrate further comprises a metal connecting line connected to the grounding pins; a part of the metal connecting line closes to the input pin, and the other part closes to the output pin, so that coupling capacitance is formed between the input end and the output end of the filter.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
73.
BULK ACOUSTIC RESONATOR AND METHOD FOR DESIGNING SAME, FILTER AND ELECTRONIC DEVICE
A bulk acoustic resonator, an effective region of which has an effective area. In the effective region, a second end point (32') of an input side (31), a first end point (34') of an output side (34), a second end point (35') of the output side (34) and a first end point (31') of the input side (31) are successively connected to each other to define a basic quadrilateral, and the area of the quadrilateral is not greater than the effective area; in a convex polygon, the length of the input side (31) and the length of the output side (34) are within a range from more than 1.5 times the equivalent side length to less than 2.5 times the equivalent side length, and the equivalent side length is the length of sides of a regular pentagon of which the area is equivalent to the effective area; an interior angle (b21) where the second end point (32') of the input side (31) of the convex polygon is located is within a range of greater than 90°C and not greater than 150°C, and the other interior angles (b22, b23, b24, b25, b26) of the convex polygon are within a range of not less than 60° and not greater than 150°C, and an obtuse angle (a3) formed by a basic input side and a basic output side is within a range of not less than 110° and not greater than 170°. The present invention also relates to a method for designing the resonator, a filter and an electronic device.
Provided is a filter, comprising: a plurality of serial resonators, and a plurality of parallel resonators, wherein each resonator comprises a substrate (101), an acoustic mirror (103), a bottom electrode (102), a top electrode (106), and a piezoelectric layer (104). The top electrode (106) of at least one serial resonator and the top electrode (106) of at least one parallel resonator have or are provided with raised portions respectively at a connecting end of the top electrode (106) and a connecting end of a non-top electrode, and the top surface of the raised portion is beyond the top surface of an inner side portion of the top electrode (106). Each resonator having the raised portion comprises a conductive layer which is in contact with the corresponding electrode in the thickness direction of the resonator, wherein the conductive layer enables the raised portion to be beyond the top surface of the inner side portion of the top electrode (106), and the thickness of the conductive layer of the at least one serial resonator is greater than the thickness of the conductive layer of the at least one parallel resonator. Moreover, the present application further relates to a bulk acoustic wave resonator assembly and a method for manufacturing the bulk acoustic wave resonator assembly.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
75.
PIEZOELECTRIC FILTER AND OUT-OF-BAND REJECTION IMPROVEMENT METHOD THEREFOR, MULTIPLEXER, AND COMMUNICATION DEVICE
A method for improving out-of-band rejection of a piezoelectric filter. The piezoelectric filter has a ladder structure (100), and each step of the ladder structure (100) comprises a series resonator (110) and a parallel resonator (120). The method comprises: adjusting the thickness of one or more layers in the series resonator (110) and the parallel resonator (120) in the ladder structure (100) of at least one step, and/or, adjusting the materials of all the series resonators (110) and/or parallel resonators (120), so that an anti-resonance frequency corresponding to a high-order parasitic resonance of the parallel resonator (120) in the ladder structure (100) is higher than a resonance frequency corresponding to a high-order parasitic resonance of the series resonator (110), or a difference therebetween is less than a set value. By adjusting the thicknesses of the layers in the resonators (110, 120), the position of the high-order parasitic resonance of the parallel resonator (120) moves from a position much lower than the high-order parasitic resonance of the series resonator (110) to an equivalent or higher position, thereby suppressing or eliminating a pseudo-passband phenomenon in a high-order parasitic resonance region and thus improving the out-of-band suppression performance of the filter.
The present invention relates to the technical field of filters, and in particular to a filter, a multiplexer, and a communication device. In the filter, inductive coupling or capacitive coupling is added between different parallel branches, and an inductive coupling or capacitive coupling mode is used for the filter, such that the insertion loss performance of the filter does not deteriorate, and the out-of-band rejection characteristic of the filter can also be improved.
The present disclosure relates to a semiconductor device, comprising: a substrate, which is provided with a first side and a second side opposite each other in the thickness direction of the substrate; a first group of resonator units, which are provided on the first side of the substrate; and a second group of resonator units, which are provided on the second side of the substrate, wherein each group of resonator units comprises at least one resonator unit, and at least one of the first group of resonator units and the second group of resonator units is a group of bulk acoustic wave resonator units; and at least one of the first group of resonator units and the second group of resonator units comprises monocrystalline piezoelectric layers, and the monocrystalline piezoelectric layers are monocrystalline piezoelectric thin film layers. The present disclosure further relates to a method for manufacturing the semiconductor device, and an electronic device with the semiconductor device.
A method for adjusting the resonant frequency of a filter, a filter, a multiplexer, and a communication device, which are beneficial to better matching of the full passband and the out-of-band of the filter. In the method, the frequency of some resonators is adjusted by adding mass loads to some series resonators and some parallel resonators, so that the whole passband of the filter can be well matched, and the out-of-band of the filter has a proper impedance value.
A method for adjusting a filter circuit, and a filter, a multiplexer and a communication device. In the method, the structure of a resonator is adjusted, such that the resonator is equivalent to a series body or a parallel body connected to a passive device, the passive device can be removed without weakening the performance of a filter, and mutual inductance coupling and parasitic capacitance present in the filter can also be eliminated.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
A piezoelectric acoustic wave filter, comprising a substrate (1) as well as an upper wafer (4) and a lower wafer (5) which are sequentially arranged on the substrate (1) from top to bottom. A metal shielding layer (13, 14) is arranged on the upper surface and/or the lower surface of the upper wafer (4), and the metal shielding layer (13, 14) is grounded. The piezoelectric acoustic wave filter has a better grounding effect and good grounding shielding characteristics.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
A method for adjusting an FBAR parasitic component, a filter, a multiplexer, and a communication device. A position where a parasitic component appears in a frequency domain is changed, so that the passband performance is improved. In the method, a capacitor (42) and an FBAR (41) are connected in series to form a series connection (4), and in an amplitude-frequency curve of the series connection (4), a starting position of the parasitic component is moved to a frequency band below a series resonant frequency point.
Disclosed are a method for implementing mass loading of a piezoelectric filter (100), a piezoelectric filter (100), a duplexer, a high-frequency front-end circuit and a communication apparatus. In the method, the piezoelectric filter (100) comprises a series branch and a parallel branch, wherein the series branch comprises three or more bulk acoustic resonators which are connected in series between the input end and the output end of the piezoelectric filter (100), and a parallel circuit is arranged between a connecting point of adjacent resonators and a grounding end. In the method, a temperature compensation layer (205) of each resonator is used as a mass load, all the series resonators are the same, and each series resonator is provided with or is not provided with the temperature compensation layer (205); and all parallel resonators have the temperature compensation layer (205), the thickness thereof being larger than that of the temperature compensation layer (205) of the series resonators. According to the technical solution, the left-side roll-off of the piezoelectric filter (100) and the better selection of the passband insertion loss performance are considered.
The present invention relates to the technical field of filters, and particularly relates to a method for designing a low group-delay fluctuation filter, comprising the following steps: according to a filter index, designing a Gaussian low-pass filter, and obtaining the inductance and capacitance values of the Gaussian low-pass filter; converting the low-pass filter to a band-pass filter; connecting a capacitor in parallel with each LC series resonant circuit to form a BVD circuit model; connecting a capacitor in series to each LC parallel resonant circuit so as to convert the parallel branch into a BVD circuit model; taking the capacitance value and inductance value in the BVD circuit model as the initial values of a target optimization function, by means of an iterative method, causing the objective optimization function to approach zero, or reach a minimum value, and recording the capacitance and inductance values at that time; calculating each resonator parameter according to the obtained capacitance value and inductance value. According to the filter obtained by the present design method, as long as performance is constant and there is no serious deterioration, the group-delay fluctuation is significantly reduced.
H03H 5/12 - Réseaux à un accès comportant comme composants uniquement des éléments électriques passifs comportant au moins un élément dépendant de la tension ou du courant
The present invention relates to the technical field of filters, and particularly relates to a multiplexer and a manufacturing method therefor, the multiplexer comprising at least two chip groups, each chip group comprising two chips located in the same frequency band, respectively being a receiving chip and a sending chip; two chips of different frequency bands are stacked on top of one another to form a plurality of stacked structures; a defined spacing is disposed between adjacent stacked structures; for each stacked structure, a defined spacing is disposed between the upper chip and the lower chip, the upper chip comprising a first wafer and the second chip comprising a second wafer, and a resonator and a pin on the second wafer being arranged opposite to a resonator and a pin on the first wafer. In the present technical solution, coupling of the chips can be reduced or avoided by adjusting the spacing between the stacked chips to avoid influencing the performance of the multiplexer; whilst ensuring the performance of the multiplexer, the planar area thereof can be further reduced, being conducive to the development direction of multiplexer miniaturisation.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01L 21/98 - Assemblage de dispositifs consistant en composants à l'état solide formés dans ou sur un substrat communAssemblage de dispositifs à circuit intégré
The present invention provides a topological structure of a quadplexer, comprising a first topological structure and a second topological structure. The first topological structure comprises a first bridge, a second phase shift element, a third phase shift element, a first duplexer and a third duplexer; the second topological structure comprises a fourth bridge, a fifth phase shift element, a sixth phase shift element, a second duplexer and a fourth duplexer. By the adoption of the technical solution of the present invention, an isolation degree of a transmitting end and a receiving end is independent of an isolation degree of the duplexers and only depends on a phase unbalance degree of the bridges and the phase shift elements, so that the isolation degree and the power capacity can be improved at the same time, the isolation degree can be improved by about 20 dB, and the power capacity can be substantially doubled. The method is expected to be widely applied to a future 5G small base station system.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H01Q 3/34 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques
86.
FILTER, DUPLEXER, HIGH-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS
Disclosed are a filter (600), a duplexer, a high-frequency front-end circuit, and a communication apparatus. The filter (600) comprises a plurality of resonators connected in series (S11, S12, S13, S14) and a plurality of resonators connected in parallel (P11, P12, P13, P14), wherein some of the resonators connected in series (S11, S12, S13, S14) and/or some of the resonators connected in parallel (P11, P12, P13, P14) are temperature compensation resonators (TCF); and the temperature compensation resonators (TCF) each comprise a temperature compensation layer (55). A high roll-off requirement and a good temperature characteristic of the filter (600) are realized without affecting the bandwidth of the filter (600), and the minimum degradation of the insertion loss of the filter (600) is achieved while the temperature drift characteristic of the filter (600) is improved.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
A multi-channel filter, comprising first-part resonators and second-part resonators, wherein the two parts each comprise M resonator groups. The first-part resonators constitute a series part of the filter, the series part comprising 2N +1 parallel bodies connected in series between an input end and an output end of the filter, and the resonators in each parallel body being from different resonator groups. The second-part resonators constitute a parallel part of the filter, the parallel part comprising N series/parallel bodies. Series branches in the series/parallel bodies and the M resonators in any one of parallel branches are from different resonator groups. The series resonance frequencies of the various resonator groups in the first-part resonators are respectively equal to the parallel resonance frequencies of the various resonator groups in the second-part resonators. The technical solution of using one wafer to realize dual channels and even multiple channels is achieved, thus conducing to optimizing design process, lowering process cost and reducing size of a filter.
A multiplexer, comprising at least two chip sets, wherein each chip set comprises two chips located in the same frequency band, which are a receiving chip and a transmitting chip, respectively; two chips of different frequency bands are superimposed so as to form a plurality of stacked structures; for an upper chip and a lower chip in each stacked structure, there is an defined interval between the two and vertical projections of the two have a staggered region (1); and a defined distance (2) is provided between adjacent stacked structures. Changing the chips from the original flat layout to the stacked layout may greatly reduce the plane area in terms of size, and by means of adjusting the chip thickness, may also enable the overall thickness to no longer increase in terms of thickness. Each chip of the multiplexer occupies a smaller area, thereby facilitating the miniaturization of products.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
89.
FILTER, DUPLEXER, HIGH-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS
Disclosed are a filter, a duplexer, a high-frequency front-end circuit, and a communication apparatus. The filter comprises a first series branch located between an input end and an output end of the filter, and a plurality of parallel branches, wherein one end of the parallel branches is located on the first series branch, and the other end thereof is grounded; and the filter further comprises at least one second series branch located between the input end and the output end of the filter, and the second series branch comprises inductors (L0). Furthermore, for the whole composed of the first series branch and the second series branch, there is at least one acoustic wave resonator (RES1) in the whole, and the acoustic wave resonator (RES1) being connected in series to the inductors (L0) in the series branch where the acoustic wave resonator is located. According to the filter, the improvement of the roll-off characteristics of the filter, the reduction of the insertion loss characteristics near series resonance frequency points of a resonator, and the improvement of the far-band suppression characteristics of the filter are facilitated.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
90.
BULK ACOUSTIC RESONATOR, ULTRA-NARROW BAND FILTER, DUPLEXER AND MULTIPLEXER
A bulk acoustic resonator, an ultra-narrow band filter, a duplexer, and a multiplexer. The bulk acoustic resonator comprises a silicon substrate (1), a lower electrode (2) formed on the silicon substrate (1), a silicon dioxide temperature compensation layer (3) formed on the lower electrode (2), a piezoelectric layer (4) formed on the silicon dioxide temperature compensation layer (3), and an upper electrode (5) formed on the piezoelectric layer. The ultra-narrow band filter comprises at least four bulk acoustic resonators located on a series branch and at least one bulk acoustic resonator located on a parallel branch; alternatively, the ultra-narrow band filter comprises at least four capacitors and at least one bulk acoustic resonator connected in series to one another between an input port and an output port, the bulk acoustic resonator being connected between any one of connection nodes of the at least four capacitors and a ground end.
A bulk acoustic wave filter and a signal processing device, which relate to the field of filters. The bulk acoustic wave filter comprises one series branch and a plurality of parallel branches. The series branch is formed by sequentially connecting a plurality of series bulk acoustic wave resonators (S11, S12, S13, S14); one of the parallel branches is connected to a connection node between two adjacent series bulk acoustic wave resonators (S11, S12, S13, S14); each parallel branch comprises a first parallel bulk acoustic wave resonator (P1a, P2a, P3a), a second parallel bulk acoustic wave resonator (P1b, P2b, P3b), and a first inductor (L1a, L2a, L3a); the first parallel bulk acoustic wave resonators (P1a, P2a, P3a), the second parallel bulk acoustic wave resonators (P1b, P2b, P3b), and the first inductors (L1a, L2a, L3a) are sequentially connected in series, and the second parallel bulk acoustic wave resonators (P1b, P2b, P3b) and the first inductors (L1a, L2a, L3a) are simultaneously connected in parallel to at least one of the second inductors (L1b, L2b, L3b) ; there is a transformer (M1) between at least two of the second inductors (L1b, L2b, L3b) that are adjacent and connected to different parallel branches; and the first inductors (L1a, L2a, L3a) and the second inductors (L1b, L2b, L3b) are all grounded. Out-of-band suppression of the bulk acoustic wave filter is improved.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
Provided in the present invention is a bulk acoustic wave duplex filter, comprising a substrate, a plastic sealing body and a metal cover. A transmitting filter and a receiving filter are arranged on the substrate at intervals; the plastic sealing body covers the substrate, the transmitting filter and the receiving filter; and the metal cover is arranged at the top of the plastic sealing body and embedded into the plastic sealing body. According to the bulk acoustic wave duplex filter provided by the present invention, the metal cover can block space coupling between the transmitting filter and the receiving filter, thereby improving the isolation and mutual inhibition between a receiving channel and a transmitting channel; in this way, not only can the increase of passband insertion loss be prevented, but the overall size of a chip will not increase significantly and the manufacturing process will not become more complicated; meanwhile, due to the introduction of the metal cover, a heat dissipation path is improved and the power capacity is increased.
The present invention relates to a semiconductor structure having a stacking unit. The semiconductor structure comprises: a protective layer having an upper surface and a lower surface; a plurality of units, wherein the units are sequentially stacked on the lower surface of the protective layer along the thickness direction of the protective layer, each unit comprises a substrate, a first accommodating space is defined between the substrate of an uppermost unit and the protective layer, a second accommodating space is defined between the substrates of the upper and lower units that are adjacently stacked, the substrate of at least one unit is provided with a chip, and the chip is located inside a corresponding accommodating space; and a plurality of conductive through holes, wherein each conductive through hole penetrates through the protective layer from the upper surface of the protective layer, and extends downwards along the thickness direction of the protective layer, so as to be electrically connected to a corresponding unit, and the plurality of conductive through holes comprise a plurality of cross-layer conductive through holes penetrating through the protective layer and the substrate of at least one unit. The present invention further relates to a manufacturing method for the semiconductor structure having the stacking unit, and an electric device having the structure.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
The present invention relates to a bulk acoustic resonator component, comprising at least two bulk acoustic resonators provided on a same substrate, each resonator comprising: an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, an overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer, and the top electrode in the thickness direction of the resonator constituting an effective area of the resonator, where: the at least two bulk acoustic resonators comprise a first resonator and a second resonator; the first resonator comprises a first piezoelectric layer, the second resonator comprises a second piezoelectric layer, the first piezoelectric layer and the second piezoelectric layer are of a same material and arranged in a same layer, and the thickness of the first piezoelectric layer is greater than the thickness of the second piezoelectric layer. The present invention also relates to an electromechanical coupling coefficient adjustment method, a filter comprising the bulk acoustic resonator set, and an electronic device.
The present invention relates to a semiconductor structure with stacked units, the semiconductor structure comprising at least two units stacked in the thickness direction of the semiconductor structure, wherein each unit comprises a substrate, and at least one of the at least two units is provided with a device on the substrate thereof; each unit further comprises a plurality of conductive bumps arranged on the substrate; corresponding conductive bumps of two adjacent stacked units are opposite each other and are connected in a bonding manner; and a top substrate of the uppermost unit of the at least two stacked units and a bottom substrate of the lowermost unit thereof form an encapsulation layer of the semiconductor structure. The present invention further relates to a manufacturing method for the semiconductor structure with stacked units, and an electronic device with the structure.
H03H 3/007 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques
96.
BULK ACOUSTIC WAVE RESONATOR AND ENCAPSULATION METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE
Disclosed is a bulk acoustic wave resonator, comprising a top electrode, a piezoelectric layer, a bottom electrode, an acoustic mirror and a sealing layer, wherein the top electrode comprises a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator; and the sealing layer at least covers the upper side of an effective area of the resonator to form an encapsulation layer of the resonator. Further disclosed are an encapsulation method for the bulk acoustic resonator, a filter, and an electronic device.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
97.
BULK ACOUSTIC WAVE RESONATOR WITH COMPOSITE ARRAY MASS LOAD, FILTER, AND ELECTRONIC DEVICE
Disclosed is a bulk acoustic wave resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein a mass load is arranged on the top electrode. The mass load comprises at least two array structures, and the at least two array structures comprise a first array structure and a second array structure, wherein the centers of first array elements of the first array structure form a first dot array, the centers of second array elements of the second array structure form a second dot array, and the second dot array is a dot array obtained by means of planar rotation or plane translation relative to the first dot array; and adjacent array elements of the two array structures are spaced apart from each other, and the size of the first array elements is different from the size of the second array elements. Further disclosed are a filter having the resonator, and an electronic device having the filter or the resonator.
Disclosed is a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode connected to a bottom electrode pin; a top electrode connected to a top electrode pin; a piezoelectric layer disposed between the bottom electrode and the top electrode, wherein an overlapped area of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror in the thickness direction of the resonator forms an effective area of the resonator; and a plurality of acoustic holes periodically distributed around the effective area, wherein the acoustic holes at least partially enter the piezoelectric layer from an upper surface of the piezoelectric layer. Further disclosed are a bulk acoustic wave resonator group, a filter having the resonator or the resonator group, and an electronic device having the filter or the resonator or the resonator group.
The present invention relates to a temperature-compensating layer structure, comprising a temperature-compensating layer, wherein the upper side of the end part of the temperature-compensating layer is an inclined surface so that the end part of the temperature-compensating layer is a wedge-shaped end surface, and an angle formed between the upper side of the end part of the temperature-compensating layer and the bottom side of the temperature-compensating layer is less than 60°; and an upper seed layer that covers over the temperature-compensating layer, wherein at least one end of the upper seed layer is provided with and extending part that extends to the outer side of the temperature-compensating layer. The present invention also relates to a bulk acoustic wave resonator, a fabrication method for the temperature-compensating layer, a fabrication method for the bulk acoustic wave resonator, a filter, and an electronic device.
Disclosed in the present invention is a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer provided between the bottom electrode and the top electrode, wherein the top electrode is provided with a boundary top electrode forming a suspended wing structure; the suspended wing structure is provided with a corner part; the corner part is provided with a first inclined plane; the first inclined plane extends upwards in an inclined mode from the outermost edge of the suspended wing structure to the inner side, and is provided with a first lower edge and a first upper edge; the outermost edge forms the first lower edge; and the bottom side of the corner part extends outwards in a transverse direction of a resonator. Further disclosed in the present invention are a filter having the resonator, and an electronic device having the filter or the resonator.
brevets
