Provided are a radiation monitor comprising a hand monitor part capable of accurately measuring surface contamination regardless of the size of a hand of a person to be measured, and a hand foot clothing monitor. A hand monitor part (7A) is characterized by being provided with a stationary detection section (73a), and a movable detection section (72a) provided to face the stationary detection section (73a) and provided to be able to reciprocate in opposite directions, and being provided with a biasing means (79a) which biases the movable detection section (72a) in a direction away from the stationary detection section (73a), a push member (74a) which is disposed between the stationary detection section (73a) and the movable detection section (72a) and capable of being pushed by a hand of a person to be measured, and an interlocking mechanism (77a) which moves the movable detection section (72a) in a direction approaching the stationary detection section (73a) against the biasing force of the biasing means (79a) according to the push amount of the push member (74a).
Disclosed is a semiconductor module and cooler that can effectively cool a semiconductor element. The semiconductor module supplies coolant from outside to a water jacket (2A) that forms the cooler and cools a circuit element section positioned on an external surface of a fin base. The semiconductor module comprises: fins (2C) thermally connected to the circuit element section; a coolant introduction flow path (21) which is positioned in the water jacket (2A), extends from an introduction port (24), and is provided with a guide section which has one surface sloped towards one side surface of the fins (2C) to guide the coolant, and another surface; a coolant discharge flow path (22) which is positioned parallel to the coolant introduction flow path (21) in the water jacket (2A), extends to a discharge port (25), and has a side wall parallel to the other side surface of the fins (2C); and a cooling flow path (23) on which the fins (2C) are positioned, and which is formed at a position to communicate with the coolant introduction flow path (21) and the coolant discharge flow path (22) inside the water jacket (2A).
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
Disclosed is a pseudo-resonant switching power source device in which appropriate bottoming-out skip control can be realised by detecting the load state on the primary side with high accuracy. A pseudo-resonant switching power source device utilises the resonance phenomenon of a resonance capacitor (Cr) and the inductance of a primary winding (P1) of a transformer (T1) in order to turn on a switching element (Q10) at the timing at which a resonance voltage bottoms out. The pseudo-resonant switching power source device is provided with: on width detection circuits or on/off width detection circuits (51, 51') which detect the on width or the on/off width (ts) of the switching element (Q10); and a bottoming-out frequency determination circuit (5) which determines, in accordance with the detected on width or on/off width (ts), the number of times the resonance voltage bottoms out. The switching element (Q10) is turned on at the timing at which bottoming-out occurs, the number of times bottoming-out occurs having been determined.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
4.
THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
Provided is a thin-film solar cell which is obtained by irradiating a laser from a transparent electrode side so that the lower layer of a photoelectric conversion layer selectively absorbs light and by performing blow-off processing, and also provided is a method for manufacturing the thin-film solar cell. The thin-film solar cell manufactured by said method is a substrate-type solar cell that has a photoelectric conversion layer (6) in which two or more n, i, and p junctions having non-monocrystalline silicon as the main material thereof are combined in the thickness direction, and the thin-film solar cell is formed by sequentially laminating a metal electrode (3), the photoelectric conversion layer (6), and a transparent electrode (7) on a substrate (1), wherein the thin-film solar cell has a top cell (6b) which is the photoelectric conversion layer (6) on the transparent electrode (7) side and also has a cell (6a) which has at least one layer more on the metal electrode (3) side than the top cell (6b), and the method for manufacturing the thin-film solar cell includes a step for simultaneously removing at least two photoelectric conversion layers (6) (6a, 6b) and the transparent electrode (7) by using a laser that has a wavelength having selective sensitivity to the cell (6a) other than the top cell (6b) from the transparent electrode (7) side.
H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]
5.
THIN FILM SOLAR CELL AND PROCESS FOR PRODUCTION THEREOF
Disclosed are: a thin film solar cell of which an output voltage and a current can be varied as required without decreasing mass productivity; and a process for producing the thin film solar cell. Specifically disclosed is a thin film solar cell (10) comprising at least: a unit cell (U) which comprises a first electrode layer (1b), a photoelectric conversion layer (1d) and a second electrode layer (1e) all laminated on a surface of a substrate (1a) having electrically insulating properties; and a connection electrode layer (E) which is laminated on a surface of the unit cell (U) which is opposed to the above-mentioned surface of the substrate (1a). In the thin film solar cell (10), all of the thin films constituting the thin film solar cell (10) are formed on the substrate (1a), and subsequently a cutting part (S2) on the connection electrode layer (E) which is located at a position corresponding to the required output voltage or current is cut, thereby obtaining the output voltage or current in a selective manner.
H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]
An insulating substrate (2) attached to a metal base plate (1) is provided with an insulating plate (3), and metal foils (3a , 4a, 4b, and 4c). Metal foils (4a and 4b) are each disposed with a semiconductor element. External connection terminals (18, 19, and 20) are attached to one end of terminal blocks (8a, 8b, and 8c). The other end of terminal blocks (8a, 8b, and 8c) is respectively connected to metal foils (4a, 4b, and 4c). Each external connection terminal (18, 19, and 20), which functions as a main terminal to which the main current flows, is disposed on a lid (21). A plurality of lids (21, 22, 23, 24, and 25), which are configured in a manner such that external connection terminals (18, 19, and 20) are respectively connected to terminal blocks (8a, 8b, and 8c) in a resin case (11) and which has a different layout with respect to the external connection terminals (18, 19, and 20), is prepared, Therefore, it is possible to simply change the position of the external connection terminals (18, 19, and 20) by changing the lid.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
7.
SOLAR CELL MODULE AND METHOD FOR REINFORCING SOLAR CELL MODULE
Disclosed is a solar cell module which is provided with a solar cell (10), a protecting member (100), a through hole (120), and reinforcing members (202, 204). The protecting member (100) seals the whole solar cell (10), and has flexibility. The through hole (120) is provided in the protecting member (100), and is positioned between the end of the protecting member (100) and the solar cell (10). The reinforcing members (202, 204) are attached to the protecting member (100), and at least a part of each of the reinforcing members is positioned between the through hole (120) and the end of the protecting member (100).
Stripe-patterned gate trenches (7) each internally containing a gate polysilicon (11a) are formed in one main surface of an n-type drift layer (1), and the gate trenches (7) are connected to a gate electrode. P-type base layers (4) each comprising an n-type emitter layer (5) inside are selectively formed in respective mesa regions (18) between two adjacent gate trenches (7), and the p-type base layers (4) are connected to an emitter electrode (12). One or more dummy trenches (8) are formed between p-type base layers (4) that are adjacent to each other in the longitudinal direction of the gate trenches (7). A conductive dummy polysilicon (11b) is formed on the inner lateral surface of each dummy trench (8) at a distance from the gate polysilicon (11a) with a gate oxide film (10) interposed therebetween. The dummy polysilicon (11b) may be connected to the emitter electrode (12). Consequently, there can be provided an insulated gate semiconductor device which has small mirror capacity even in cases where the voltage applied between the collector and the emitter is low.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
9.
ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY AND METHOD FOR PRODUCING SAME
Disclosed are: an electrophotographic photosensitive body which has sufficient wear resistance and satisfactory characteristics for photosensitive bodies, while being affected little by harmful gases or temperature/humidity conditions; and a method for producing the electrophotographic photosensitive body. Specifically disclosed is an electrophotographic photosensitive body which has at least a photosensitive layer on a conductive body. The photosensitive layer contains a diadamantyl diester compound represented by general formula (I). (In general formula (I), R1, R2 and R3 each independently represents a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1-6 carbon atoms, a substituted or unsubstituted alkoxyl group having 1-6 carbon atoms, an aryl group having 6-20 carbon atoms or a heterocyclic group; X and Z each represents a single bond or a substituted or unsubstituted alkylene group having 1-6 carbon atoms; and Y represents an OCO group or a COO group.)
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
G03G 5/14 - Couches intermédiaires ou de recouvrement inertes pour les couches recevant la charge
Disclosed is an electric current estimation circuit which is capable of estimating the inductance current with a high degree of precision, regardless of changes in the inductance of the inductor, and which allows for cost reductions, miniaturization and the suppression of switching loss. The current flowing through a switching element (5) is detected by a current detection means (8), and a capacitor (201) is charged by the signal voltage corresponding to the detected current. The reduction rate for the terminal voltage of the capacitor when the switching element (5) is off is calculated on the basis of the rate of increase in the terminal voltage of the capacitor, the absolute value of the instantaneous value of the input source voltage and the instantaneous value of the DC output voltage, and the capacitor is discharged in a manner such that the terminal voltage of the capacitor is reduced at the reduction rate while the switching element (5) is off. The current traveling through the inductor (4) is estimated from the terminal voltage of the capacitor.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
Provided is a power conversion apparatus, wherein the current required to be applied thereto can be secured without making the circuit construction of a DC voltage conversion circuit such as a DC chopper larger in scale. Power can be supplied to a voltage-type inverter (8) from both a DC chopper (6), and a voltage-type rectifier circuit (4) that converts AC power to DC power. The voltage-type rectifier circuit (4) comprises an upper arm section (4H) and a lower arm section (4L), and converts AC power coming from an AC generator (3) into DC power. The voltage-type rectifier circuit (4) also carries out a DC chopper function using the upper and lower arms of the voltage-type rectifier circuit (4) and the windings of the AC generator (3), and supplies the power of a DC power supply (5) to the voltage-type inverter (8).
H02M 7/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
B60L 3/00 - Dispositifs électriques de sécurité sur véhicules propulsés électriquementContrôle des paramètres de fonctionnement, p. ex. de la vitesse, de la décélération ou de la consommation d’énergie
B60L 11/14 - avec possibilité de propulsion mécanique directe
Disclosed is a solar cell module with enhanced reliability and insulation properties, in which insulation failure does not occur between the solar cell module and a rear side support even in cases in which warping has occurred in a solar cell during laminate molding. Also disclosed is a production method therefor. The solar cell module (1) is configured in a manner such that at least a first sealing material (5) and the rear side support (6) are layered in said order on one side (2b) of the solar cell (2), a through hole (8) is provided in the rear side support (6), and the electrical output of the solar cell (2) is output to the outside by passing the electrical output wire (7) of the solar cell (2) through the through hole (8), wherein in the solar cell module, an insulating material (10) is disposed between the solar cell (2) and the first sealing material (5) in a position corresponding to the through hole (8).
The phosphorus ion implantation and the boron ion implantation are carried out separately onto the back surface (1a) of a FZ-N substrate (1). Subsequently, the back surface (1a) of the FZ-N substrate (1) is irradiated with a laser beam (14) while retaining the FZ-N substrate (1) at a specific temperature falling within the range from 100 to 500°C inclusive by means of a substrate-heating device (31), thereby achieving the laser annealing of the back surface (1a) of the FZ-N substrate (1). In this manner, an FS layer (9) and a p+ collector layer (10) are formed. The activation rate of phosphorus and boron of which ions have been implanted can be increased and a desired diffusion profile can be obtained by conducting the laser annealing while heating the FZ-N substrate (1). As a result, the activation rate of an impurity of which an ion has been implanted into the back surface (1a) of the FZ-N substrate (1) can be increased without adversely affecting the front surface structure of an FS-type IGBT. It also becomes possible to satisfactorily recover the crystal defects caused by the ion implantation, wherein a desired diffusion profile can be obtained.
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
14.
PHOTOSENSITIVE BODY FOR XEROGRAPHY, MANUFACTURING METHOD FOR SAME, AND XEROGRAPHIC DEVICE
Disclosed is a photosensitive body for xerography which can maintain low frictional resistance on the surface of a photosensitive drum from initiation until after printing, reduce the amount of wear, and obtain quality images. Also disclosed are a manufacturing method for the photosensitive body for xerography, and a xerographic device. A photosensitive layer of a photosensitive body for xerography, which has said photosensitive layer on a conductive substrate, contains a polycarbonate resin having structural units represented by general formulae (1) and (2) as a resin binder. The manufacturing method for the photosensitive body for xerography comprises a step in which the photosensitive layer is formed by coating a coating fluid containing at least the resin binder on the surface of the conductive substrate, and the polycarbonate resin having structural units represented by general formulae (1) and (2) is contained in the coating fluid as the resin binder.
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
A protective diode (71) comprises a p-anode layer (21) and an n-cathode layer (22) which are alternately formed on a polysilicon layer, and comprises a pn-junction (74) which adopts a reverse blocking state when forward biased and every other one of which is short-circuited by a metal film (53). By connecting the protective diode (71) to a power semiconductor element (IGBT (72)), high breakdown resistance and reduced chip area can both be achieved at the same time, elevation of withstand voltage is suppressed even if a clamping voltage is repeatedly applied, and furthermore breakdown due to a negative surge voltage input to a gate terminal (G) can be prevented.
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
Disclosed is a photosensitive body for xerography which can maintain low frictional resistance on the surface of a photosensitive drum from initiation until after printing, reduce the amount of wear, and obtain quality images. Also disclosed are a manufacturing method for the photosensitive body for xerography, and a xerographic device. In the photosensitive body for xerography, which has a photosensitive layer on a conductive substrate, the photosensitive layer contains a polycarbonate resin having structural units represented by general formulae (1) and (2) as a resin binder. The manufacturing method for the photosensitive body for xerography comprises a step in which the photosensitive layer is formed by coating a coating fluid containing at least the resin binder on the surface of a conductive substrate, and the polycarbonate resin having structural units represented by general formulae (1) and (2) is contained in the coating fluid as a resin binder.
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
G03G 5/14 - Couches intermédiaires ou de recouvrement inertes pour les couches recevant la charge
Disclosed is a semiconductor device in which parallel pn layers (20) are provided as a drift layer between an element active section and an n+ drain region (11). The parallel pn layers (20) are formed by alternately joining an n-type region (1) and a p-type region (2) in a repeated manner. An n-type high concentration region (21) is provided at a first main surface side of the n-type region (1). The n-type high concentration region (21) has higher impurity concentration than an n-type low concentration region (22) provided at a second main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration of 1.2 to 3 times, preferably 1.5 to 2.5 times, that of the n-type low concentration region (22). Furthermore, the n-type high concentration region (21) has a thickness of no more than 1/3, preferably 1/8 to 1/4, of the thickness of the region adjacent to the p-type region (2), said region being of the n-type region (1).
Disclosed are a semiconductor device, i.e., a monolithic unit having improved adhesion and heat dissipation to a cooling body, and a semiconductor device, which is composed of an assembled body of the monolithic units, and is capable of configuring a discretionary circuit at low cost. The monolithic unit (101) is configured of: copper blocks (1, 8); a conductive pattern-attached insulating substrate (6); an IGBT chip (10) and a diode chip (13); a collector terminal pin (15); implant pins (17) firmly adhered to the chips (10, 13) with solder (11, 14); a printed board (16) having the implant pins (17) firmly adhered thereto; an emitter terminal pin (19), and a control terminal pin (20); a collector terminal pin (15); and a resin case (21) which encapsulates the above-mentioned parts. With the copper blocks (1, 8), adhesion and heat dissipation to the cooling body are improved. Furthermore, the discretionary circuit can be configured by combining a plurality of the intrinsic units (101) with inter-unit wiring board.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
19.
Online diagnostic method and online diagnostic system for geothermal generation facility
An online diagnostic system for a geothermal generation facility is discloses that includes an automatic steam measurement device for measuring a characteristic of steam to be supplied to a steam turbine from a steam-water separator at the geothermal generation facility that outputs analysis data. A monitor-control device controls an operation of the geothermal generation facility while monitoring the geothermal generation facility. A diagnostic device performs at least one of an evaluation of a steam characteristic at the geothermal generation facility, an evaluation of the steam-water separator, and an evaluation of pulsation and confluence of a production well based on the analysis data from the automatic steam measurement device and performance data of the geothermal generation facility from the monitor-control device. An operating status of the geothermal generation facility is diagnosed.
G06F 15/00 - Calculateurs numériques en généralÉquipement de traitement de données en général
20.
Integrated control circuit for controlling a switching power supply, switching power supply incorporating the same, and a method of controlling a switching power supply
An integrated control circuit for controlling a switching power supply, a switching power supply incorporating the same, and a method of controlling the switching power supply, where the control IC includes a current comparator that detects current flowing through a switching device, a flip-flop circuit that controls the ON-period of the switching device, an averaging circuit that converts the peak load current value to a time-average, a comparator that detects an overloaded state from the load current, a delay circuit that sets a time from detecting the overcurrent state to stopping the switching operation, a latch circuit that stops the switching operation for a period of time, a first reference voltage supply used in the current comparator, which has a higher voltage value than a second reference voltage supply used in the comparator.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02H 7/122 - Circuits de protection de sécurité spécialement adaptés aux machines ou aux appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou de ligne, et effectuant une commutation automatique dans le cas d'un changement indésirable des conditions normales de travail pour convertisseursCircuits de protection de sécurité spécialement adaptés aux machines ou aux appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou de ligne, et effectuant une commutation automatique dans le cas d'un changement indésirable des conditions normales de travail pour redresseurs pour convertisseurs ou redresseurs statiques pour onduleurs, c.-à-d. convertisseurs de courant continu en courant alternatif
21.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device wherein a p anode layer (2) is formed on the side of one main surface of an n- drift layer (1). On the side of the other main surface of the n- drift layer (1), an n+ cathode layer (3) having an impurity concentration higher than that of the n- drift layer (1) is formed. On the surface of the p anode layer (2), an anode electrode (4) is formed. On the surface of the n+ cathode layer (3), a cathode electrode (5) is formed. An n type broad buffer region (6) is formed inside of the n- drift layer (1), said broad buffer region having a net doping concentration higher than that of the bulk of a wafer and lower than that of the n+ cathode layer (3) and that of the p anode layer (2). The specific resistance (ρ0) of the n- drift layer (1) satisfies the inequalities of 0.12V0≤ρ0≤0.25V0, wherein V0 is the rated voltage. The total net doping concentration quantity in the broad buffer region (6) is 4.8×1011-1.0×1012 atoms/cm2.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
22.
SWITCHING POWER SUPPLY CIRCUIT AND POWER FACTOR CONTROLLER
The switching power supply circuit includes a full-wave rectifier (1) which full-wave rectifies alternating power-supply voltage to output a pulsating current, and an inductor (3) connected to the full-wave rectifier (1). A level conversion circuit (20) includes a plurality of resistors connected in series, and converts inductor current detection voltage to a first current level signal and a second current level signal (S1 and S2) which are different in voltage level and which are proportional to inductor current. A continuous control setting circuit (30) generates a reference potential signal a phase of which is approximately the same as a phase of alternating input voltage from the first current level signal (S1) and compares a voltage level of the reference potential signal with a voltage level of the second current level signal (S2) to output a second set pulse (S8) that specifies timing at which a switching element (4) turns on.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 7/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
23.
POWER SUPPLY SYSTEM, CONTROLLER THEREFOR, AND METHOD OF MANUFACTURE OF CONTROLLER
A power supply system of the present invention aims to achieve optimization of the efficiency and therefore includes: z (z is a natural number equal to or larger than 2) power supplies (PS-1 to PS-z) connected in parallel; and a controller (8) for the number of power supplies in operation which controls the number of power supplies in operation among the power supplies (PS-1 to PS-z). The controller (8) for the number of power supplies in operation determines the number of the power supplies in operation based on values of intersection currents i1 to i(z-1) which are determined through processes of: identifying output loss characteristics with respect to load currents of the z power supplies (PS-1 to PS-z) by use of convex functions f1 to fz, respectively; obtaining a function hn expressing a conversion efficiency of a total load current at the time of operating the n (n is a natural number equal to or smaller than z) power supplies (PS-1 to PS-z) based on the functions f1 to fz; and obtaining an intersection current iq (q is a natural number equal to or smaller than (z-1)) which is a current of an intersection point between a function hq and a function h(q+1). (Greek letter eta is replaced with h.)
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02J 1/00 - Circuits pour réseaux principaux ou de distribution, à courant continu
24.
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT
A high voltage semiconductor device includes an n--type region 101 encompassed by a p- well region 102 and is provided on a p--type silicon substrate 100; a drain n+-region 103 connected to a drain electrode 120; a p base region 105 formed so as to be separate from and encompass the drain n+-region 103; and a source n+-region 114 formed in the p base region 105. Further, a p--region 131 is provided that passes through the n--type region 101 to the silicon substrate 100. The n--type region 101 is divided, by the p--region 131, into an n--type region 101a having the drain n+-region 103 and an n--type region 101b as a region having a floating electric potential.
H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
A semiconductor chip (40) is bound to one main surface of an insulating substrate (60). A metal base plate (50) is bound to the other main surface of the insulating substrate (60). Subsequently, a resin case is fixed to the peripheral part of the metal base plate (50) in a member containing the semiconductor chip (40). Subsequently, a surface electrode formed on the semiconductor chip (40) is connected to an external connection terminal of the resin case through a bonding wire (81), thereby sealing the semiconductor chip (40). In this manner, a semiconductor device (10) is assembled. In the assembled semiconductor device (10), a solder (31) (32) and a reactive metal foil (30) that acts as a heat source are inserted between the metal base plate (50) and a heat sink (20), the resulting product is pressurized, an electric current is applied to the reactive metal foil (30) to cause ignition to occur, thereby melting the solder (31) (32), and the molten solder (31) (32) is solidified. In this manner, the metal base plate (50) and the heat sink (20) are bound to each other instantly at room temperature.
The disclosed solar cell module laminate is provided with both a solar cell module and a supporting body supporting the solar cell module, such as a metal plate, resin sheet, or tile, and the aforementioned solar cell module is bonded to the aforementioned supporting body with a bonding material layer therebetween. The minimum necessary bonding area is calculated from the ratio of the minimum bond strength needed in said solar cell module laminate and the bond strength between the aforementioned solar cell module and the aforementioned bonding material layer, and the solar cell module laminate is given a structure that suppresses the amount of bonding material used to a minimum. By means of this structure, costs are reduced in response to the amount of bonding material used. Accordingly, both cost reduction and sufficient bonding strength are possible in the solar cell module laminate.
The characteristics of a heat radiation member used in a semiconductor module are improved. A heat radiation member (10A) including an aluminum type member (20) which contains aluminum and a copper type member (30) which contains copper, which is embedded in the aluminum type member (20), and sides of which are enclosed by the aluminum type member (20) is formed. A semiconductor element is thermally bonded to the heat radiation member (10A) to fabricate a semiconductor module. The heat radiation member (10A) includes the aluminum type member (20) and the copper type member (30). As a result, it is possible to realize light weight while ensuring certain heat radiation. In addition, the copper type member (30) is enclosed by the aluminum type member (20). Accordingly, the strength of the heat radiation member (10A) can be increased.
A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.
A semiconductor module including a cooling unit by which a fine cooling effect is obtained is provided. A plurality of cooling flow paths (21c) which communicate with both of a refrigerant introduction flow path which extends from a refrigerant introduction inlet and a refrigerant discharge flow path which extends to a refrigerant discharge outlet are arranged in parallel with one another in a cooling unit (20). Fins (22) are arranged in each cooling flow path (21c). Semiconductor elements (32) and (33) are arranged over the cooling unit (20) so that the semiconductor elements (32) and (33) are thermally connected to the fins (22). By doing so, a semiconductor module (10) is formed. Heat generated by the semiconductor elements (32) and (33) is conducted to the fins (22) arranged in each cooling flow path (21c) and is removed by a refrigerant which flows along each cooling flow path (21c).
H01L 23/473 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température impliquant le transfert de chaleur par des fluides en circulation par une circulation de liquides
30.
MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
A screen oxide film is formed on an n- drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n- drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p- well regions (10) are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, n source regions (11) are formed.
A first parallel pn-layer (12) is formed between an active region (1) and an n+-drain region (2). A peripheral region (3) is provided with a second parallel pn-layer (15), which has a repetition pitch narrower than the repetition pitch of the first parallel pn-layer (12). An n--surface region (18) is formed between the second parallel pn-layer (15) and a first main surface. On the first main surface side of the n--surface region (18), a plurality of p-guard ring regions (19), (20), and (21) are formed to be separated from each other. A field plate electrode (23) is connected electrically to the outermost p-guard ring region (19) among the p-guard ring regions (19), (20), and (21). A channel stopper electrode (24) is connected electrically to an outermost peripheral p-region (26) of the peripheral region (3).
Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A super-junction structure is provided that has a striped parallel surface pattern, where a super-junction stripe and a MOS cell 6 stripe are parallel, and a p column Y2 over which no MOS cell 6 stripe is arranged and a p column Y1 over which the MOS cell 6 stripe is arranged are connected at an end.
Disclosed is a surface contamination monitor which includes a hand-foot-cloth monitor capable of easily conducting the relocation to a place where an inspection should be conducted. Specifically disclosed is a surface contamination monitor having a folding mechanism capable of folding the monitor body, which is provided with a base (1), on the upper surface of which radiation detection elements (10) for measuring a foot section are provided, a support column (2) which is provided in the center rear of the upper surface of the base (1), and a top unit (3) which is affixed to the upper end of the support column (2), and to which radiation detection elements (10) for measuring a hand section are provided, wherein the folding mechanism is capable of folding the support column (2) onto the upper surface of the base (1) via a first hinge provided at the lower end of the support column (2), and capable of folding the support column (2) to the opposite side via a second hinge provided in the middle of the support column (2), and wherein the top unit (3) projects more outward than the end of the base (1) in the state in which the support column (2) is folded via the first and second hinges.
Disclosed are a semiconductor radiation detection element and a surface contamination monitor, which are capable of easily conducting the relocation to a place where an inspection should be conducted, and maintaining radiation detection capability over a long period. A hand-foot-cloth monitor detects the radiation irradiated from radioactive substances adhered to the surfaces of the hands and feet and the surfaces of clothes with a radiation detection element (10). The radiation detection element (10) is provided with a P-layer (112) (P-type semiconductor layer) joined to an N-type silicon substrate (111) (N-type semiconductor substrate), a detection-surface-side electrode (13) (first electrode) formed on the upper surface of the P-layer (112), a circuit-board-side electrode (12) (second electrode) formed on the lower surface of the N-type silicon substrate (111), and a silicon nitride film (14) formed on the element surface including the detection-surface-side electrode (13).
Disclosed is an exit monitor which has an inexpensive and straightforward construction, and which improves both detection performance and cost performance by making it possible to detect contamination due to radioactive substances, particularly in underarm locations between the side of the body and the arms where detection is otherwise difficult, without being affected by differences in height among a large number of workers. A front/back surface monitoring section (2) detects the surface contamination state of the front surface and back surface of the body of a worker. A section (31) for monitoring the underarms on both sides detects the surface contamination state on the side of the body from the waist to the underarm of the worker, and the surface contamination state on the insides of the arms, from the palm to the underarm on the insides of the arms of the worker. Thus an exit monitor (100) detects whether or not there is contamination on the front surface and the rear surface and the underarm surfaces on both sides of the body, in accordance with the detection signals.
A semiconductor device in which the assembly of a shield plate, a metal ring, and a control circuit board is improved is provided. A metal step support 20 implanted in a sheath case includes a base portion 20a, a connection portion 20b, and a step portion 20c. A shield plate 21 is mounted over the step portion 20c. A metal ring 22 is mounted over the shield plate 21 so that it is placed around the connection portion 20b. A control circuit board 23 is mounted over the metal ring 22. The control circuit board 23 is fixed to the connection portion 20b of the step support 20 by the use of a screw 24. The metal ring 22 is positioned by the connection portion 20b, so the assembly can be performed easily. An end of the metal ring 22 over which the control circuit board 23 is mounted protrudes from an end of the connection portion 20b and the control circuit board 23 is fixed onto metal. Therefore, looseness of the screw 24 caused by, for example, vibration can be minimized.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
37.
SOLAR CELL MODULE LAMINATED BODY AND METHOD FOR MANUFACTURING SAME
Provided is a solar cell module laminated body wherein a pressure-sensitive adhesive which bonds together a supporting body and a solar cell module does not deteriorate due to light, and furthermore, a possibility of having the supporting body and the solar cell module removed from each other is eliminated. In the solar cell module laminated body wherein the solar cell module having a solar cell element therein and the supporting body are laminated, the supporting body and the solar cell module are bonded to each other. At the solar cell module outer periphery irradiated with solar light, the supporting body and the solar cell module are bonded to each other by means of a reactive curable adhesive, and in the solar cell module portion inside of the outer periphery, said portion being shielded from solar light, the supporting body and the solar cell module are bonded by means of the pressure-sensitive adhesive.
Disclosed is an article carrying monitor (100) for precisely detecting the six faces of an article to be inspected, thereby to detect the presence or absence of contamination satisfactorily. A monitor unit detects, for the front face of the article, the presence or absence of the contamination by means of a front-face detector, if the distance from the front face of the article to the front-face detector is within a predetermined range. If the distance from the front face of the article to the front-face detector exceeds the predetermined range and if a contaminated portion is on the front-face lefthand, the presence or absence of the contamination is detected by an upper-face front-side leftward detector and a lower-face front-side leftward detector. If the distance from the front face of the article to the front-face detector exceeds the predetermined range and if a contaminated portion is on the front-face righthand, the presence or absence of the contamination is detected by an upper-face front-side rightward detector and a lower-face front-side rightward detector. The contamination of the back face, the left face and the right face is likewise measured by the article carrying monitor (100).
A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a WBG semiconductor as a switching element of an inverter circuit. In the semiconductor device for application to a switching element of an inverter circuit, a band gap of a semiconductor material is wider than that of silicon, a circuit that limits a current when a main transistor is short circuited is provided, and the main transistor that mainly serves to pass a current, a sensing transistor that is connected in parallel to the main transistor and detects a microcurrent proportional to a current flowing in the main transistor, and a lateral MOSFET that controls a gate of the main transistor on the basis of an output of the sensing transistor are formed on the same semiconductor.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
Disclosed is a solar cell module (100) which comprises a solar cell power generating unit (102) and a connection member (104). The connection member (104) supplies the output of a solar cell (110) to an external electronic component (220). The connection member (104) is provided with a cover member (130) and an output connection part (140). The cover member (130) covers at least the outer periphery of a terminal part (126) among the outer periphery of a protective member (120) and the outer periphery of the terminal part (126). One end (142) of the output connection part (140) is positioned inside the cover member (130), and the other end (144) is positioned outside the cover member (130). The end (142) of the output connection part (140) is connected to the terminal part (126) of the solar cell power generating unit (102). The other end (144) of the output connection part (140) has a terminal for the connection with an electronic component (200).
H01L 31/042 - Modules PV ou matrices de cellules PV individuelles
H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]
41.
SWITCHING POWER SUPPLY DEVICE, INTEGRATED CIRCUIT, AND METHOD FOR SETTING OPERATION STATE OF SWITCHING POWER SUPPLY DEVICE
Provided is a switching power supply device capable of setting an operation state during an initialization period by adjusting the value of a resistor for grounding an OUT-terminal or an IS-terminal, and also provided is a method for setting the operation state. The switching power supply device comprises: an oscillation circuit (3) for specifying the switching frequency of a switching element (Q1); a drive circuit (4) for, based on an oscillation signal from the oscillation circuit (3), turning on and off the switching element (Q1); a state setting circuit (6) disposed within a power supply control IC (100) including the oscillation circuit (3) and the drive circuit (4) and outputting a state instruction signal for instructing an operation state of the switching power supply device; and a control circuit (1) for, within the initialization period immediately after the power supply to the power supply control IC (100) is started, instructing the state setting circuit (6) to determine the state instruction signal. A first resistor (R1) having an adjusted resistance value is connected to an external terminal of the power supply control IC (100) to which the drive signal to the switching element (Q1) is output.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
42.
PHOTORECEPTOR FOR ELECTROPHOTOGRAPHY, PROCESS FOR PRODUCING THE SAME, AND ELECTROPHOTOGRAPHIC APPARATUS
Provided is a photoreceptor for electrophotography in which the photoreceptor drum surface can have reduced frictional resistance throughout the period from the beginning to after printing. The photoreceptor is reduced in wear and can give satisfactory images. Also provided are a process for producing the photoreceptor and an electrophotographic apparatus. The photoreceptor for electrophotography has a photosensitive layer containing, as a resin binder, a copolyarylate resin comprising structural units represented by the following chemical structural formula (1). (In the chemical structural formula (1), partial structural formulae (A), (B), (C), (D), (E), and (F) represent structural units constituting the resin binder. Symbols a, b, c, d, e, and f indicate the amounts in mol% of structural units (A), (B), (C), (D), (E), and (F), respectively, provided that a+b+c+d+e+f is 100 mol%. R1 to R19 each represents hydrogen or the like, and s and t each is an integer of 1 or larger.)
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of uneven plating layer on a second surface side. An electrode is formed on the first surface of the semiconductor substrate, and another electrode is formed on the second surface. A curing resin is applied on the electrode on the second surface and a film is stuck on the curing resin, and the curing resin is then cured. After that, a plating process is conducted on the first surface. The film and the curing resin are then peeled off.
A cooling apparatus for semiconductor chips includes radiation fins formed on the opposite surface of metal base opposite to the surface of metal base, to which an insulator base board mounting semiconductor chips thereon, is disposed. The radiation fins, such as sheet-shaped fins having different lengths are arranged such that the surface area density of the fins becomes higher in the coolant flow direction, whereby the surface area density is the total surface area of radiation fins on a unit surface area of the metal base. As a result, the temperatures of semiconductor chips arranged along the coolant flow direction are closer to each other.
A solar cell module, wherein a decrease in the insulation resistance can be suppressed. The solar cell module comprises: a photoelectric conversion device (103) comprising a substrate (107) and a photoelectric conversion layer (109) formed on the substrate (107); a protective member (101) for protecting the light incident surface of the solar cell module, the protective member (101) bonded to the photoelectric conversion device (103) on the light incident surface-side with a sealing member (105) being interposed therebetween; a reinforcing member (102) for protecting the solar cell module, the reinforcing member (102) bonded to a surface of the solar cell module opposite to the light incident surface with a sealing member (106) being interposed therebetween; and an insulating sheet (104) which is arranged between the photoelectric conversion device (103) and the reinforcing member (102) for insulation of the photoelectric conversion device (103).
Disclosed is an electrophotographic photosensitive body, which is free from image defects such as background fogging or black spots on the white background by having good coating liquid stability and good metal oxide dispersion, and has good image characteristics in any environment. Also disclosed are a method for producing the electrophotographic photosensitive body, and an electrophotographic apparatus provided with the electrophotographic photosensitive body. Specifically disclosed is an electrophotographic photosensitive body (7), wherein an underlying layer (2) and a photosensitive layer (3) are sequentially arranged on a conductive base (1). The underlying layer (2) contains, as a main component, a resin which is obtained by polymerization using an aromatic dicarboxylic acid, one or more aliphatic dicarboxylic acids having 8 or more carbon atoms, and one or more diamines having a cycloalkane structure as starting materials, and additionally contains a metal oxide. The aromatic dicarboxylic acid is contained in the resin in an amount of 0.1-10 mol%, and both the acid number and the base number of the resin are 10 KOHmg/g or less. Also specifically disclosed are a method for producing the electrophotographic photosensitive body (7), and an electrophotographic apparatus provided with the electrophotographic photosensitive body (7).
G03G 5/14 - Couches intermédiaires ou de recouvrement inertes pour les couches recevant la charge
G03G 5/06 - Couches photoconductricesCouches de génération de charges ou couches de transport de chargesAdditifs à cet effetLiants à cet effet caractérisées par le fait que leur matériau photoconducteur est organique
47.
ELECTROPHOTOGRAPHIC PHOTORECEPTOR, PROCESS FOR PRODUCING THE ELECTROPHOTOGRAPHIC PHOTORECEPTOR, AND ELECTROPHOTOGRAPHIC DEVICE
Disclosed is an electrophotographic photoreceptor which is equipped with an undercoating layer capable of attaining stable potential characteristics in all environments ranging from low temperature and low humidity environments to high temperature and high humidity environments, suppressing the occurrence of printing defects and simultaneously attaining the recovery from transfer and the recovery from high light fatigue even in a wide variety of usage and operating environments, and as a result, which can print good images having little or no image defect and density difference by virtue of the provision of. Also disclosed are a process for producing the electrophotographic photoreceptor and an electrophotographic device with the electrophotographic photoreceptor mounted thereon. An electrophotographic photoreceptor (7) comprises an undercoating layer (2) and a photosensitive layer (3) stacked in serial order on an electroconductive base (1). The undercoating layer (2) comprises metal oxide fine particles having a surface treated with an organic compound, and a copolymer resin synthesized using a dicarboxylic acid, a diol, a triol, and a diamine as indispensable constituent monomers.
G03G 5/14 - Couches intermédiaires ou de recouvrement inertes pour les couches recevant la charge
G03G 5/00 - Organes d'enregistrement pour enregistrement original par exposition, p. ex. à la lumière, à la chaleur, aux électronsFabrication à cet effetEmploi de matériaux spécifiés dans ce but
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
A temperature model unit (10) has a first temperature model A and a second temperature model B. As for a semiconductor device, the first temperature model A is modeled only by thermal resistors (5)-(7) while the second temperature model B is arranged to be a model including not only thermal resistors (15)-(17) but also a thermal capacitor (14). The latter model, however, includes the thermal capacitor (14) only between a junction and a case, and a component between the case and a cooling member and that between the cooling member and a cooling medium are modeled only by the thermal resistors (16) and (17). The temperature model unit (10) carries out an operation by the first temperature model A for an initial fixed period. After a lapse of the fixed period, an average value of a voltage between both terminals of the thermal resistor (5) in the fixed period of time determined by a voltage average value calculator (21) is set as an initial value of a voltage between both terminals of the thermal capacitor (14), so that an operation of the second temperature model B starts. Thereafter, a junction temperature output by the second temperature model B is output to a loss model unit (3) and the like through a selector (13).
Magnetic force deteriorates in a shorter time due to fastening pressure applied to a permanent magnet and positional shift of the permanent magnet due to vibration at the time of assembling an electromagnetic device having the permanent magnet attached thereto. A frame-shaped magnet holder composed of a nonmagnetic material is provided. The magnet holder is formed with a thickness equivalent to or slightly more than that of the permanent magnet, and is provided with a fixing arm, which is connected to one edge of the frame-like body along the center line thereof and has a fixing hole. Furthermore, supporting pieces are arranged to face the fixing arm with a hollow section therebetween, such that the supporting piece ends on one side are connected to the edge of the frame-like body and that the other ends are in the opened state. On the surface where each supporting piece and the frame-like edge face each other, a space where the permanent magnet or a magnetic short-circuiting piece is fitted and inserted is provided.
A power factor correction power supply unit for correcting a power factor includes a switching device, an input voltage detection circuit, an output voltage detection circuit, an error amplifier for outputting an error signal obtained by amplifying a difference between an output voltage detection signal and a reference voltage, an ON width generation circuit for generating an ON time width, an OFF width generation circuit for generating an OFF time width of the switching device, and a switching device driving circuit. The drive circuit conducts an ON/OFF control over the switching device upon receiving a turn-on timing signal for turning on the switching device as soon as the OFF time width is terminated and upon receiving a turn-off timing signal for turning off the switching device as soon as the ON time width is terminated.
G05F 1/00 - Systèmes automatiques dans lesquels les écarts d'une grandeur électrique par rapport à une ou plusieurs valeurs prédéterminées sont détectés à la sortie et réintroduits dans un dispositif intérieur au système pour ramener la grandeur détectée à sa valeur ou à ses valeurs prédéterminées, c.-à-d. systèmes rétroactifs
51.
Uninterruptible power supply and method for tripping thereof
Performance failure in an uninterruptible power supply (UPS) is determined independently by itself. A selective tripping can be done within a shorter time than one cycle of an AC output. A UPS converts a DC voltage to an AC voltage and supplies the AC voltage to a load device. A UPS has a control unit conducting a failure determination by using an instantaneous value of an internal voltage and current. It is preferred that a UPS includes an inverter unit and a trip switch. The inverter unit includes a semiconductor bridge circuit generating a sinusoidal AC voltage by modulating a DC voltage with voltage instruction values, and a filter circuit inserted between the semiconductor bridge circuit and the load device. The trip switch connects and trips a connection between the inverter unit and the load device according to the failure determination of the control unit.
H02H 7/00 - Circuits de protection de sécurité spécialement adaptés aux machines ou aux appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou de ligne, et effectuant une commutation automatique dans le cas d'un changement indésirable des conditions normales de travail
52.
Uninterruptible power supply and method for selective tripping thereof
UPS performance failure is determined independently by itself. Selective tripping can be done within a shorter time than one cycle of an AC output. A UPS converts a DC voltage to an AC voltage and supplies the AC voltage to a load device. A UPS has a control unit identifying a resistance value of an internal resistance as an internal impedance of the UPS by using an instantaneous value of an internal voltage and current and conducting a failure determination by detecting abnormal fluctuation of the value. It is preferred that an identification of the internal impedance is done through a system identification unit.
Disclosed are an online diagnostic method and an online diagnostic system for a geothermal generation facility comprising: an automatic steam property measurement device (11) that measures the characteristics of steam supplied from a steam-water separator of a geothermal generation facility to a steam turbine and outputs analytical data; a monitor/control device (12) that controls operation while monitoring the geothermal generation facility; and a diagnostic device (21) that, on the basis of the analytical data from the automatic steam characteristics measurement device and the operating data for the geothermal generation facility from the monitor/control device, evaluates at least one of: the steam characteristics; the steam-water separator; or the pulsation and confluence of the production wells of the geothermal generation facility; and diagnoses the operating status of the geothermal generation facility.
Provided are a steam characteristics automatic measuring device and a geothermal power generating device that can ascertain the conditions of a power generating turbine or a condenser over time and that assist the smooth operation of geothermal power generating facilities by automatically measuring the characteristics of steam produced from the ground for geothermal power generation without being affected by interfering components, such as hydrogen sulfide or carbon dioxide gas contained in large quantities in the steam, and ideally by automatically measuring the characteristics of steam over time. The steam characteristics automatic measuring device, and the geothermal power generating device equipped with same, are characterized by being provided with a silica concentration meter that automatically measures the concentration of silica contained in condensate obtained by cooling steam produced from the ground, an electrical conductivity meter that automatically measures the electrical conductivity of the condensate, a pH meter that automatically measures the pH value of the condensate, and a data processing transmitter that automatically transmits the data measured by the silica concentration meter, the electrical conductivity meter and the pH meter.
Provided is a solar battery panel or the like which is light in weight, can be installed on roofs or the like of existing construction with sufficient strength and durability, easily extracts power from a solar battery, and permits a resin sheet to be used also as a construction material. A solar battery panel (1) is formed by laminating: a soft resin sheet (2), which is positioned on a side opposite to a sunlight receiving surface (side opposite to a light incoming surface), and contains a glass fiber; a polyethylene resin layer (3) positioned on the resin sheet (2); a solar battery module (4), which is embedded in the polyethylene resin layer (3), is flexible and has a substrate (8) composed of polyimide resin; and an ETFE layer (5) positioned on the polyethylene resin layer (3). The solar battery module (4) has a rear side electrode layer (9) on a side opposite to the light receiving surface of the polyimide resin substrate (8), and from the rear side electrode layer (9), a lead line (10) for extracting power from a solar battery cell (7) penetrates the polyethylene resin layer (3) and the resin sheet (2) and is led out to the side opposite to the light receiving surface of the resin sheet (2).
H01L 31/042 - Modules PV ou matrices de cellules PV individuelles
E04D 1/30 - Éléments de couvertures particuliers, p. ex. tuiles faîtières, noues, tuiles pour pignons, tuiles d'aération
E04D 3/40 - Plaques ou feuilles en partie modifiées dans des buts particuliers, p. ex. destinées à être posées sur le mur comme gouttièresÉléments pour usages particuliers, p. ex. éléments de faîtage conçus spécialement pour être utilisés en liaison avec les plaques ou les feuilles
E04D 13/18 - Aspects de la couverture de toit relatifs aux dispositifs collecteurs d'énergie, p. ex. contenant des panneaux solaires
56.
NOVEL ETHYLENE COMPOUND, CHARGE TRANSPORT MATERIAL CONTAINING THE ETHYLENE COMPOUND, PHOTORECEPTOR FOR ELECTROPHOTOGRAPHY CONTAINING THE ETHYLENE COMPOUND, AND PROCESS FOR PRODUCING THE PHOTORECEPTOR
Disclosed is an ethylene compound that can suppress a photo-deterioration, causes no significant light-induced fatigue, can prevent a rise in residual potential caused by the light-induced fatigue, can stably maintain properties as a photoreceptor for electrophotography even after use for a long period of time, and can stably provide a good image. Also disclosed are a charge transport material containing the ethylene compound, the photoreceptor for electrophotography containing the ethylene compound, and a process for producing the photoreceptor. The ethylene compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxyl group having 1 to 6 carbon atoms; R4 represents an alkyl group having 1 to 3 carbon atoms, a phenyl group, or a tolyl group; and Ar represents an aryl or heterocyclic group having 7 to 20 carbon atoms.
C07C 211/54 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné ayant des groupes amino liés à deux ou trois cycles aromatiques à six chaînons
G03G 5/06 - Couches photoconductricesCouches de génération de charges ou couches de transport de chargesAdditifs à cet effetLiants à cet effet caractérisées par le fait que leur matériau photoconducteur est organique
A neutron dosimeter enabling compensation of the output of a mixed gas detector which outputs a detection pulse signal the pulse height of which corresponds to the energy of a neutron in response to the detection of the neutron. The mixed gas detector contains a mixed gas of nitrogen gas and an organic compound gas. The compensation is based on G(L) function data approximating the tendency of the characteristic shown on a graph the horizontal axis of which represents the neutron energy and the vertical axis of which represents the ambient dose equivalent (1-cm dose equivalent) to a neutron fluence vs ambience dose equivalent (1-cm dose equivalent) conversion factor curve (neutron energy vs ICRP 74 H*(10) response curve).
Disclosed is a positive electrification laminate-type electrophotographic photoreceptor having excellent durability and cost effectiveness. Also disclosed is a process for producing the photoreceptor. The electrophotographic photoreceptor comprises an electroconductive substrate (1) and a photosensitive layer (5) provided on the electroconductive substrate (1). The photosensitive layer (5) is of a positive electrification laminate type comprising at least a charge transport layer (3) and a charge generating layer (4) stacked in this order. The charge generating layer (4) contains at least a resin binder, a charge generating agent, a space filling agent, and an electron transport agent. The charge transport layer (3) contains at least polystyrene as a resin binder and a hole transport agent. The charge transport layer (3) has a mineral oil content that is not more than 1% by mass of polystyrene content.
G03G 5/047 - Couches photoconductrices caractérisées en ce qu'elles ont plusieurs couches ou caractérisées par leur structure composite caractérisées par les couches de génération ou de transport de charges
G03G 5/00 - Organes d'enregistrement pour enregistrement original par exposition, p. ex. à la lumière, à la chaleur, aux électronsFabrication à cet effetEmploi de matériaux spécifiés dans ce but
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
G03G 5/06 - Couches photoconductricesCouches de génération de charges ou couches de transport de chargesAdditifs à cet effetLiants à cet effet caractérisées par le fait que leur matériau photoconducteur est organique
59.
METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
A substrate to be processed is bonded on a supporting substrate, which has an outer shape larger than that of the substrate to be processed, with a photothermal conversion layer and an adhesive layer therebetween, and even when the surface, which is of the substrate to be processed and is opposite to the bonded surface, is processed, appearance failure on the processed surface of the substrate to be processed is prevented from being generated. An adhesive layer (4) is formed on one surface of a substrate (3) to be processed, a photothermal conversion layer (2) is formed on one surface of a supporting substrate (1) having a surface which has an outer shape larger than that of the surface of the substrate to be processed, and a laminated body is obtained by bonding the substrate (3) on the surface of the photothermal conversion layer (2) with the adhesive layer (4) therebetween. The laminated body is placed on a spin chuck (9) in a chamber (8) of a spin coater apparatus, an alkaline aqueous solution (11) is dropped onto a portion (2a), which is of the photothermal conversion layer (2) and exposed from the substrate to be processed, then, the exposed portion is cleaned by means of a high-pressure cleaning nozzle (12). Then, polishing, wet-processing and the like are performed to the surface of the substrate (3), and a semiconductor device is manufactured.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
Provided is a process for fabricating a semiconductor device wherein an electrode is not peeled off easily from a semiconductor substrate. A front-surface electrode or the surface structure of a device is formed on the front surface of the semiconductor substrate (1). The semiconductor substrate (1) is then made thin by performing back grinding and etching on the entire back surface thereof. Subsequently, a buffer layer and a collector layer are formed on the back surface of the semiconductor substrate (1), which has been made thin, by performing ion implantation and heat treatment. Thereafter, a titanium film (12) and a nickel film are formed, as a back-surface electrode, sequentially on the back surface of the semiconductor substrate (1) by deposition or sputtering. Thereafter, electroless nickel plating and substitution gold plating are performed continuously, and a nickel plated film (14) and a substitution gold plated film (15) are formed simultaneously on the opposite sides of the front-surface electrode and the back-surface electrode of the semiconductor substrate (1), thus forming a collector electrode (9). As a preprocessing of electroless nickel plating, double zincate processing is performed on the front-surface electrode of the semiconductor substrate (1).
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 28/02 - Revêtements uniquement de matériaux métalliques
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
61.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
On an n-semiconductor substrate (1), a trench to be a second side wall (7) is formed by cutting the substrate by means of a dicing blade having an inverted trapezoid shape. A p-diffusion layer (4) is prevented from being cut, by bringing the bottom section of the trench into contact with the p-diffusion layer (4) formed on a first main surface (2) (front surface) of the n-semiconductor substrate (1). Then, on the second side wall (7), a p-isolating layer (9) connected with a p-collector layer (8) and the p-diffusion layer (4) is formed. Since the p-diffusion layer (4) is not cut, a glass supporting substrate which supports a wafer and an expensive adhesive are eliminated, and the p-isolating layer (4) can be formed at low cost.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/76 - Réalisation de régions isolantes entre les composants
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
62.
ELECTROPHOTOGRAPHIC PHOTORECEPTOR AND METHOD FOR MANUFACTURING THE ELECTROPHOTOGRAPHIC PHOTORECEPTOR
Disclosed is an electrophotographic photoreceptor that is less likely to cause cracking even when the photoreceptor drum and the peripheral members thereof are recycled or when used in a liquid development process, whereby good images can be yielded. Also disclosed is a method for manufacturing the electrophotographic photoreceptor. The electrophotographic photoreceptor comprises an electroconductive substrate and a photosensitive layer containing at least an electric charge generating material and an electric charge transport material on the electroconductive substrate. The photosensitive layer comprises an interpolyallylate resin represented by general formula (I) as a resin binder.
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
G03G 5/047 - Couches photoconductrices caractérisées en ce qu'elles ont plusieurs couches ou caractérisées par leur structure composite caractérisées par les couches de génération ou de transport de charges
G03G 15/02 - Appareils pour procédés électrographiques utilisant un dessin de charge pour déposer une charge uniforme, p. ex. pour sensibiliserDispositifs pour la décharge corona
G03G 21/00 - Dispositions non prévues dans les groupes , p. ex. nettoyage, élimination des charges résiduelles
63.
Semiconductor device for controlling switching power supply
A semiconductor device controls a switching power supply. The semiconductor device includes a current inflow terminal; a starter circuit to cause a starting current to flow from the current inflow terminal to a power supply terminal to charge a capacitor externally connected to the power supply terminal; a control unit which controls the starter circuit to turn on to charge the capacitor with the starting current and controls the starter circuit to turn off to perform brown-out detection; a comparator which detects a brown-out state while the starter circuit is turned off; and a brown-out detection unit which receives output signals from the comparator and the control unit as inputs. The brown-out detection is performed while the starter circuit is off, so that the current inflow terminal for the starter circuit is used in common as a voltage detection terminal for detection of the brown-out state.
An induction heating apparatus which continuously heats a steel plate by a solenoid system. The induction heating apparatus (1) comprises at least three heating coils (10A to 10D) which are arranged along the longitudinal direction of the steel plate such that the steel plate (2) passes through the inside thereof, and inductance adjusters (12A to 12D) which are arranged on electrical pathways (11) electrically interconnecting the respective heating coils and a power source for applying voltage to the heating coils and can generate self induction and adjust self inductance in the self induction. The inductance adjusters are arranged such that mutual induction is generated at least between mutually adjacent inductance adjusters.
Heat is efficiently dissipated from the upper and lower major surfaces of a semiconductor device on which a semiconductor element is mounted. A semiconductor device (1) comprises an insulating substrate (10A), an insulating substrate (10B) so arranged as to face the insulating substrate (10A), and a semiconductor element (20) arranged between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode arranged opposite to the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) formed on the insulating substrate (10A), and the emitter electrode is electrically connected to a metal foil (10bc) formed on the insulating substrate (10B). Consequently, heat generated by the semiconductor element (20) can be efficiently dissipated from the upper and lower major surfaces of the semiconductor device (1).
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
66.
PRODUCTION EQUIPMENT AND METHOD OF THIN-FILM LAMINATE
Disclosed is production equipment of a thin-film laminate wherein the position in the vertical direction of a flexible strip substrate is maintained with high precision even if the substrate is conveyed over a long distance in the horizontal direction while the width direction of the substrate is directed toward the vertical direction. When a thin film laminate is produced by laminating a plurality of thin films on the surface of a flexible strip substrate (1), at least a pair of grip rollers (52U) arranged between at least two film deposition chambers out of a plurality of film deposition chambers and gripping the end of the substrate on the upper side in the vertical direction is installed obliquely upward such that the rotational direction of the grip roller forms an angle ϑU with respect to the conveyance direction of the substrate (1), and the height of the substrate (1) can be controlled by changing the force of the grip rollers (52U) for gripping the substrate (1) thereby generating a rising force (Fx) in the substrate (1).
C23C 16/54 - Appareillage spécialement adapté pour le revêtement en continu
B65H 5/06 - Transfert des articles retirés des pilesAlimentation des machines en articles par rouleaux
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]
67.
Semiconductor device for switching power supply control, startup circuit, and startup method for switching power supply device
A semiconductor device for switching power supply control limits the startup current supplied from a high-voltage input terminal, and prevents heat generation and combustion in case of an anomaly. A high-voltage input terminal is connected to the main winding of a transformer, and is supplied with a startup voltage upon input of a power supply to the switching power supply device. A power supply terminal is connected to a capacitor, and outputs a startup current to charge the capacitor after input of the power supply input. A startup circuit is connected between the high-voltage input terminal and the power supply terminal, and charges the capacitor while increasing the startup current with magnitude proportional to the voltage value of the power supply terminal, and after startup, turns off the startup current and supplies the power supply voltage only from the auxiliary winding of the transformer.
H02M 1/00 - Détails d'appareils pour transformation
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
68.
Semiconductor device and method of producing the same
3, both inclusively. One principal surface of the substrate is irradiated with protons and then heat-treated to thereby form a broad buffer structure, namely a region in a first semiconductor layer where a net impurity doping concentration is locally maximized. Due to the broad buffer structure, lifetime values are substantially equalized in a region extending from an interface between the first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer to the region where the net impurity doping concentration is locally maximized. In addition, the local minimum of lifetime values of the first semiconductor layer becomes high. It is thus possible to provide a semiconductor device having soft recovery characteristics, in addition to high-speed and low-loss characteristics, while suppressing a kinked leakage current waveform.
This object aims to make it possible to collect exposed dose data from many dosimeters on a real time basis. A monitor instruction transmitting unit of a repeater transmits an electrical message for a monitor instruction through an allocated communication channel. A monitor instruction receiving unit of a dosimeter receives the electrical message for the monitor instruction. A response timing determination unit generates a plurality of response timing data that define a receiving termination timing point of the electrical message for the monitor instruction as a starting point with the number expressed only by slot number information contained in the electrical message for the monitor instruction of the dosimeter and randomly selects timing data out of the generated plurality of the response timing data, so as to determine timing for transmitting a response to each communication channel. A response unit transmits the electrical message for the monitor instruction at respective determined timing to each communication channel.
Provided are an electrophotographic-photosensitive element and an electrophotographic device, which are used in a high speed/resolution color machine of a positively charging type and which are excellent in dot-reproducibility and graduation. Also provided is an electrophotographic-photosensitive element, which can realize the optimum sensitivity characteristics for each device merely by adjusting the film thickness percentage. The electrophotographic-photosensitive element is positively charged into a laminated type by laminating a charge transport layer, which includes a positive hole transport material and a first adhesive resin, and a charge generating layer, which includes a charge generating material, a positive hole transport material and a second adhesive resin, sequentially on a conductive base member. The contents of the charge generating material in the charge generating layer are within a range over 0.7 wt. % and below 3.0 wt. % in the same layer.
G03G 5/047 - Couches photoconductrices caractérisées en ce qu'elles ont plusieurs couches ou caractérisées par leur structure composite caractérisées par les couches de génération ou de transport de charges
G03G 5/05 - Matériaux de liaison organiquesMéthodes d'enduction d'un substrat avec une couche photoconductriceAdditifs inertes utilisables dans des couches photoconductrices
A resistor for detecting a current is connected between a source electrode (25) of a main element (24) and a current sensing electrode (22) of a current detecting element (21). The withstand voltage of a gate insulating film (36) is larger than a product of the maximum current, which can be carried to the current detecting element (21) when reversely biased, and the resistance. The diffusion depth of a p-body region (32) of the main element (24) is less than that of a p-body region (31) of the current detecting element (21), and the curvature at an end section of the p-body region (32) of the main element (24) is smaller than that at an end section of the p-body region (31) of the current detecting element (21). Thus, when reverse bias is applied, an electric field at the end section of the p-body region (32) of the main element (24) becomes higher than that at the end section of the p-body region (31) of the current detecting element (21), and avalanche breakdown is permitted to easily occur in the main element (24) prior to that in the current detecting element (21).
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
72.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Provided is a semiconductor device wherein sputter generated by laser welding is prevented from adhering to a circuit pattern and a semiconductor chip and eliminates deterioration of electric characteristics are eliminated. A method for manufacturing such semiconductor device is also provided. A connecting conductor (14) is adhered with a solder (13) to a copper foil formed on a ceramic material (4), and a resin (17a) is applied to a level lower than an upper surface (P) of the connecting body (14) and laser welding is performed. Sputter (21) generated in laser welding due to application of the resin (17b) after laser welding is prevented from adhering to circuit patterns (5, 6) and a semiconductor chip (8). Thus, the electrical characteristics are prevented from being deteriorated.
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
Disclosed is an integrated circuit (100) having voltage-dividing circuits integrated. The integrated circuit (100) comprises a first resistor (121), a second resistor (122), a control unit (130), a switch (140) and a changeover unit (150). The first resistor (121) and the second resistor (122) constitute a resistive voltage-dividing element for dividing either the voltage, which is rectified from an AC voltage to be fed to the control unit (130), or a DC voltage. The switch (140) is connected in series with the resistive voltage-dividing element, and passes or blocks an electric current to pass through the resistive voltage-dividing element. The change-over unit (150) turns on/off the switch (140) so that the electric current may be passed at the driving time of the control unit (130) but may be blocked at the stand-by time of the control unit (130).
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
A regulating plate (26) for regulating the amount of magnetic flux in a magnetic path through which magnetic flux generated from a permanent magnet (23) is allowed to pass is arranged such that the plate is abuttable on a back plate (15) in parallel to a movable shaft (1). A part (26a) of the regulating plate (26) adjacent to the back plate (15) is shaped such that the width, or surface area of the part (26a) is smaller than that of a part (26b) of the regulating plate adjacent to an isolation spring (8). Magnetic saturation is caused in the part (26b) of the regulating plate so that the amount of magnetic flux of the permanent magnet (23) is less than a releasing force from the isolation spring (8), thus regulating the amount of magnetic flux passing.
A production system of thin film solar battery which can enhance workability by preventing occurrence of conveyance crease caused by a drive roll for conveying a film substrate. In the production system of thin film solar battery where a belt-shaped flexible film substrate wound around a feeding roll is fed to a film deposition chamber maintained in substantially vacuum state, discharge is performed between a ground electrode and an applying electrode having a target material arranged oppositely in the film deposition chamber to deposit a metal thin film becoming an electrode on the surface of the film substrate under fixed heating, and then film substrate on which the metal thin film is formed is taken up by a take-up roller provided in a take-up chamber, a pair of drive rolls (14, 15) for conveying the film substrate(1) on which the metal thin film (22) is formed under a fixed tension are provided in the take-up chamber (5), and layers (21) of elastic member are formed on the circumferential surface at the opposite ends of at least one drive roll (15) corresponding to the opposite ends of the film substrate in the width direction.
H01L 31/20 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - les dispositifs ou leurs parties constitutives comprenant un matériau semi-conducteur amorphe
C23C 14/56 - Appareillage spécialement adapté au revêtement en continuDispositifs pour maintenir le vide, p. ex. fermeture étanche
A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device.
A current-mode switching power supply is provided, in which there is no unstable operation arising from the fact that signals to generate PWM signals are minute, even when a load is light and a switching frequency is high. In a switching power supply of this invention, an added slope signal is superposed in an early stage of a rise of a current detection signal, so that a combined signal Vsig is caused to reach a certain magnitude even when the load is light and the switching frequency is high, and consequently an output FB of an error amplifier ERRAMP which is balanced with the combined signal is also increased. By this means, even in a current mode, it is possible to eliminate unstable operation arising from the fact that the feedback signal FB which is the output of the error amplifier ERRAMP and the combined signal Vsig are minute.
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance
G05F 1/595 - Dispositifs à semi-conducteurs connectés en série
79.
Insulating transformer and power conversion device
An insulating transformer includes a semiconductor substrate, an insulating substrate, a primary winding provided on one of the semiconductor substrate and the insulating substrate, a secondary winding provided on other of the semiconductor substrate and the insulating substrate, and an insulating spacer layer provided in between the semiconductor substrate and the insulating substrate for insulating and separating the primary winding and the secondary winding. The primary winding and the secondary winding are disposed to face each other. The insulating spacer layer maintains a constant interval between the semiconductor substrate and the insulating substrate.
A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm.
H01L 23/485 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées formées de structures en couches comprenant des couches conductrices et isolantes, p. ex. contacts planaires
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
A laser gas analyzer of frequency modulation type includes: a light source (204) having a laser drive signal generation unit (204s) which combines a wavelength scan drive signal for changing the laser emission wavelength so as to scan the absorption wavelength of the gas to be measured and a high-frequency modulation signal for modulating the emission wavelength so as to output the combined result as a laser drive signal, a current control unit (204c), a laser element (204e), a thermistor (204f), a Peltier device (204g), and a temperature control unit (204d); and a signal processing circuit (208) having synchronization detection circuit (208b) for detecting an amplitude equal to doubled frequency component in an output signal from a reception unit (207), and a calculation unit (208b).
G01N 21/39 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant des lasers à longueur d'onde réglable
A magnetic short-circuiting plate (16) for reducing a quantity of a magnetic flux to be generated from a permanent magnet (9) is mounted between magnetic plates (11, 12) in the case of having an electromagnetic device operate for constant excitation, and the magnetic short-circuiting plate (16) is removed from the electromagnetic device in the case of having the electromagnetic device operate as an electromagnetic latch.
A door driving apparatus includes a rotary actuator, a rotary transmission member integrally fixed to an output shaft extending from the rotary actuator, and a pair of linear transmission members opposed to each other via the rotary transmission member. The linear transmission members are configured to be in mesh with the rotary transmission member and to move approximately parallel to each other in opposite directions.
A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors.
H01L 31/112 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par un fonctionnement par effet de champ, p.ex. phototransistor à effet de champ à jonction
A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions. The bottom of each trench is over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.
A Doppler frequency distribution measuring part (11) measures a Doppler shift frequency distribution. A frequency distribution correcting part (12) determines a part of the Doppler shift frequency distribution that is affected by 'aliasing', and corrects the measurement value of the Doppler shift frequency of that part, thereby obtaining a correct Doppler shift frequency distribution. When the actual value of the Doppler shift frequency exceeds a measurement limit defined by the repetition frequency, the measurement value is a value as affected by the 'aliasing'.
G01F 1/66 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en mesurant la fréquence, le déphasage, le temps de propagation d'ondes électromagnétiques ou d'autres types d'ondes, p. ex. en utilisant des débitmètres à ultrasons
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