The Gemesis Diamond Company

États‑Unis d’Amérique

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Classe IPC
B01J 3/06 - Procédés utilisant des hyper-pressions, p. ex. pour la formation de diamantsAppareillage approprié, p. ex. moules ou matrices 1
C03B 9/00 - Soufflage du verreProduction d'articles de verre creux soufflés 1
C09K 3/00 - Substances non couvertes ailleurs 1
C30B 29/04 - Diamant 1
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1.

STEP HEATING PROCESS FOR GROWING HIGH QUALITY DIAMOND

      
Numéro d'application US2012070622
Numéro de publication 2013/096450
Statut Délivré - en vigueur
Date de dépôt 2012-12-19
Date de publication 2013-06-27
Propriétaire THE GEMESIS DIAMOND COMPANY (USA)
Inventeur(s)
  • Kim, Joo Ro
  • Zhu, Hexiang
  • Pearson, Karl

Abrégé

Disclosed is a method of growing a diamond, including the steps of providing a diamond seed in a reaction chamber; providing a protective layer above the diamond seed; providing a catalyst above the protective layer; providing a carbon source above the catalyst; applying pressure to the reaction chamber; heating the catalyst to a first temperature; holding the first temperature for a first duration; heating the catalyst to a second temperature; and holding the second temperature for a second duration.

Classes IPC  ?

  • C03B 9/00 - Soufflage du verreProduction d'articles de verre creux soufflés

2.

MULTI-HEATER SYSTEM FOR GROWING HIGH QUALITY DIAMOND AND A METHOD FOR PREPARING THE SAME

      
Numéro d'application US2012040721
Numéro de publication 2012/170343
Statut Délivré - en vigueur
Date de dépôt 2012-06-04
Date de publication 2012-12-13
Propriétaire GEMESIS DIAMOND COMPANY (USA)
Inventeur(s)
  • Zhu, Hexiang
  • Pearson, Karl

Abrégé

Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

Classes IPC  ?

  • B01J 3/06 - Procédés utilisant des hyper-pressions, p. ex. pour la formation de diamantsAppareillage approprié, p. ex. moules ou matrices

3.

MULTILAYER STRUCTURE FOR A DIAMOND GROWTH AND A METHOD OF PROVIDING THE SAME

      
Numéro d'application US2012023301
Numéro de publication 2012/106324
Statut Délivré - en vigueur
Date de dépôt 2012-01-31
Date de publication 2012-08-09
Propriétaire THE GEMESIS DIAMOND COMPANY (USA)
Inventeur(s)
  • Zhu, Hexiang
  • Pearson, Karl
  • Kim, Joo Ro

Abrégé

A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.

Classes IPC  ?