Antireflective overlays and methods of forming the same are described. In embodiments the antireflective overlays are for mobile devices such as mobile phones, and include a base structure including a glass substrate with a first side and a second side opposing the first side. An antireflective stack including a plurality of layers of differing refractive index is present on the first side of the glass substrate. The antireflective overlay may exhibit a reflectance of less than or equal to about 3% in wavelength range of 425 nanometers (nm) to 675 nm.
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p. ex. par irradiation
2.
MULTILAYER ANTIREFLECTIVE ARTICLES AND METHODS OF FORMING THE SAME
Multilayer antireflective articles are disclosed. In embodiments, the multilayer antireflective articles include a combination of a moth-eye layer and a multi-layer antireflective stack. The articles can exhibit desirable optical properties for use in various applications, including screen overlays. Methods of forming such articles are also disclosed.
C03C 17/34 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes
3.
MULTILAYER ANTIREFLECTIVE ARTICLE AND METHODS OF FORMING THE SAME
Multilayer antireflective articles are disclosed. In embodiments, the multilayer antireflective articles include a combination of a moth-eye layer and a multi-layer antireflective stack. The articles can exhibit desirable optical properties for use in various applications, including screen overlays. Methods of forming such articles are also disclosed.
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p. ex. par irradiation
A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.
F16K 3/06 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot en forme de plaques disposées entre l'alimentation et l'évacuation
F16K 51/02 - Autres détails non particuliers aux types de soupapes ou clapets ou autres appareils d'obturation spécialement conçus pour les installations de vide poussé
F16K 3/02 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet
F16K 3/10 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot et dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre
F16K 3/18 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre du fait du mouvement des éléments de fermeture
F16K 31/52 - Moyens mécaniques d'actionnement à manivelle, excentrique ou came
5.
Push-to-connect and pull-to-disconnect quick coupling
A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to-disconnect operation is described. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.
F16L 37/23 - Accouplements du type à action rapide dans lesquels l'assemblage est maintenu par des billes, rouleaux ou ressorts hélicoïdaux sous pression radiale entre parties au moyen de billes
A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.
A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.
F16K 3/06 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot en forme de plaques disposées entre l'alimentation et l'évacuation
F16K 3/10 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot et dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre
F16K 51/02 - Autres détails non particuliers aux types de soupapes ou clapets ou autres appareils d'obturation spécialement conçus pour les installations de vide poussé
F16K 3/02 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet
F16K 3/18 - Robinets-vannes ou tiroirs, c.-à-d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planesGarnitures d'étanchéité à cet effet avec dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre du fait du mouvement des éléments de fermeture
8.
PUSH-TO-CONNECT AND PULL-TO-DISCONNECT QUICK COUPLING
A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to- disconnect operation is provided. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.
F16L 37/23 - Accouplements du type à action rapide dans lesquels l'assemblage est maintenu par des billes, rouleaux ou ressorts hélicoïdaux sous pression radiale entre parties au moyen de billes
9.
Rotary magnetron magnet bar and apparatus containing the same for high target utilization
An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.
A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.
A scratch and fingerprint resistant anti-reflective film in accordance with a particular embodiment of the present technology includes an anti-reflective stack and a protective layer overlying the anti-reflective stack. The anti-reflective stack has at least six stack layers of alternating higher and lower refractive indexes. The protective layer includes diamond-like carbon having fluorine as a bulk constituent. At least a 15 cm region of the film is continuous and has an average nanoindentation hardness of at least 8 GPa using the Continuous Stiffness Measurement Technique. An average reflectance off the film at the region from normal incident light of wavelengths from 425 nm to 675 nm is not more than 1%. Average a* and b* in CIELAB color space for reflectance off the film at the region from -45° to 45° incident visible light are within a range from -2.0 to 2.0.
B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
B32B 7/02 - Propriétés physiques, chimiques ou physicochimiques
A scratch-resistant anti-reflective film in accordance with a particular embodiment includes an anti-reflective stack and a protective layer overlying the anti-reflective stack. The anti-reflective stack has at least six stack layers of alternating higher and lower refractive indexes. The protective layer is at least primarily composed of diamond-like carbon and has a thickness of not more than 5 nm. At least a 15 cm2 region of the film is continuous and has an average nanoindentation hardness of at least 8 GPa using the Continuous Stiffness Measurement Technique. An average reflectance off the film at the region from normal incident light of wavelengths from 425 nm to 675 nm is not more than 1%. Average a* and b* in CIELAB color space for reflectance off the film at the region from -45° to 45° incident visible light are within a range from -2.0 to 2.0.
A coated substrate in accordance with a particular embodiment includes a base substrate and an anti-reflective coating having at least six chemically deposited layers on the base substrate. At least a 15 cm2 region of the anti-reflective coating is continuous has an optical thickness variation of not more than 3% over a maximum dimension of the region. The anti-reflective coating, at the region, has an average reflectance of not more than 1% for normal incident visible light, an average nanoindentation hardness of at least 9 GPa, and a reflectance color at incident angles within a range from -45° to 45° having both a* and b* in CIELAB color space within a range from -2.0 to 2.0. The layers include S13N4 high-refractive-index layers interspersed with S1O2 low-refractive-index layers. The coated substrate overlies display circuitry within a housing of an electronic device, such as a mobile phone.
B05D 5/06 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir des effets multicolores ou d'autres effets optiques
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
A transparent substrate with an antireflection coating is provided that includes at least six layers in overlying contact on the surface. The AR coating has an absolute reflection of less than 1% over the visible spectrum from 425 nm to 675 nm, and a neutral color such that a* is less than ±1.5 and b* is less than ±1.5 over the entire substrate. The AR coating has a nano-indentation hardness greater than 9GPa. A process of making such a coating includes the insertion of a substrate into a plasma enhanced chemical vapor deposition (PECVD) apparatus. An AC ion source is energized in the PECVD apparatus in the presence of a first precursor and ammonia to form a first layer of said coating. At least 5 more layers of the coating are deposited on the first layer.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
A transparent substrate with an antireflection coating is provided that includes: at least six-layers in overlying contact on the surface, the six layers having at least one layer having a refractive index greater than about 2.15 at 632 nm and at least one layer having a lower refractive index of between 1.44 and 1.52 at 632 nm, where at least one of the lower refractive index layers is SiO2 containing at least 0.25% hydrogen by atomic concentration. In a specific embodiment of the coating at least one layer having a refractive index greater than about 2.15 at 632nm is TiO2 containing at least 0.25% chlorine by atomic concentration.
A method for manufacturing vacuum deposited barrier films that prevent water vapor and/or oxygen gas permeation, while minimizing the amount of particles and contaminants on the surface to which the barrier film is to be applied is provided. The method includes protecting a to-be-coated surface with an adhesive tacky film through vacuum pump down and from roller contact, etc. Surfaces treated with the method include flexible web substrates and rigid substrates such as glass or metal. A glass substrate with a pre-coated film stack, for example, a glass sheet with coatings for making an organic light-emitting diode (OLED) display can be protected with a tacky film per the inventive method. Small substrates such as glass lenses can also benefit from the inventive method. As can other substrates such as rolls of metal strip and substrates with curved or pre-cut shapes.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/54 - Appareillage spécialement adapté pour le revêtement en continu
C23C 16/22 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt de matériaux inorganiques, autres que des matériaux métalliques
A duoplasmatron is provided having a cathode, an anode with linear slit, and an intermediate electrode (IE) between the cathode and the anode where the IE has an opening that is aligned with the anode slit. A magnet forms a magnetic field that passes through the anode slit. A discharge passes from the cathode to the anode through the IE opening and the anode slit. The discharge is constricted through the IE opening and the magnetic field in the anode slit. An extractor external to the anode accelerates ions through an ion emitting slit aligned with the anode slit. A process of generating an accelerated ion beam is provided that includes flowing a gas into the IE and then energizing at least one power supply to induce electron flow to the anode. Ionizing the gas in the gap between the IE and anode. The ions are accelerated from the anode through the extractor ion emitting slit forming a linear ion beam.
A linear anode layer ion source is provided that includes a top pole having a linear ion emitting slit. An anode under the top pole has a slit aligned with the top pole ion emitting slit. At least one magnet creates a magnetic field that passes through the anode slit. Wherein the width of the anode slit is 3mm or less. A process of generating an accelerated ion beam is also provided that includes flowing a gas into proximity to said anode. By energizing a power supply electron flow is induced to the anode and the gas is ionized. Accelerating the ions from the anode through the linear ion emitting slit generates an accelerated ion beam by a process superior to that using a racetrack-shaped slit.
A clamp is provided that incorporates a plurality of flexible links with V flexures between the links to maintain even spacing of the links before and during installation. Each link has multiple segments joined around at least one flexure point, and a floating band surrounding the links to distribute clamping pressure that is produced along a circumference of contact points. The clamp provides evenly distributed clamping pressure by increasing the number of clamping contact points between the clamp and articles being joined. The clamp has non- limiting applications for clamping target tubes or as a vacuum flange for ISO fittings. A clamp can produce a vacuum tight seal between a target tube and end block or end support flange of a rotary magnetron without resort to tools, and as such is rapidly secured in place.
F16B 2/08 - Brides ou colliers, c.-à-d. dispositifs de fixation dont le serrage est effectué par des forces effectives autres que la résistance à la déformation inhérente au matériau dont est fait le dispositif externes c.-à-d. agissant par contraction utilisant des frettes ou des bandes
An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.
A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
22.
HIGH TARGET UTILIZATION MOVING MAGNET PLANAR MAGNETRON SCANNING METHOD
A method for operating a moving magnet magnetron is provided enhanced target utilization. A magnet pack is moved in a first 2-D motion profile with a variable velocity. The magnet pack is then translated in a second 2-D motion profile that varies relative to the first profile. This process moving and translating is repeated to provide enhanced target utilization. These varied movement and translation profiles preclude the formation of a diamond-shaped erosion area common to the prior art. Representative to such profiles are intersecting sigmoidal curves. The resultant target is characterized by a metal from that has better target utilization as the wear pattern precludes the diamond shaped erosion area common to the prior art and instead has a multiple erosion peaks.
A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.
H01J 27/14 - Autres sources d'ions à décharge d'arc utilisant un champ magnétique appliqué
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
24.
ROTARY MAGNETRON MAGNET BAR AND APPARATUS CONTAINING THE SAME FOR HIGH TARGET UTILIZATION
An apparatus for coating a substrate is provided that includes a racetrack- shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.
PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
26.
CLOSED DRIFT ION SOURCE WITH SYMMETRIC MAGNETIC FIELD
A closed drift ion source is provided comprising a single magnetic source, a first pole and a second pole. The ends of the first and second poles are separated by a gap. The magnetic source is disposed proximate to one of the first pole and second pole. A first magnetic path is provided between one magnetic pole of the single magnetic source and the end of the first pole. A second magnetic path is provided between the other magnetic pole of the single magnetic source and the end of the second pole. The first and second magnetic paths are selectively constructed to produce a symmetrical magnetic field in the gap.
A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly.
A closed drift ion source is provided, having an anode that serves as both the center magnetic pole and as the electrical anode. The anode has an insulating material cap that produces a closed drift region to further increase the electrical impedance of the source. The ion source can be configured as a round, conventional ion source for space thruster applications or as a long, linear ion source for uniformly treating large area substrates. A particularly useful implementation uses the present invention as an anode for a magnetron sputter process.
A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.
H02M 7/04 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
31.
ROTATABLE MAGNETRON SPUTTERING WITH AXIALLY MOVEABLE TARGET ELECTRODE TUBE
A new and useful rotatable sputter magnetron assembly is provided, that addresses the issue of uneven wear of the target electrode tube. According to the principles of the present invention, a rotatable sputter magnetron assembly for use in magnetron sputtering target material onto a substrate comprises a. a longitudinally extending tubular shaped target electrode tube having a longitudinal central axis, b. the target electrode tube extending about a magnet bar that is configured to generate a plasma confining magnetic field adjacent the target electrode tube, c. the magnet bar being held substantially stationary within the target electrode tube, and d. the target electrode tube supported for rotation about its longitudinal central axis and for axial movement along its longitudinal central axis, so that wear of the target electrode tube can be controlled by moving the target electrode tube axially during magnetron sputtering of the target material.
A method and apparatus for directing an ion beam toward a surface of a substrate is disclosed. Certain embodiments of the invention relate generally to ion beam sources adapted to direct ion beams toward a surface of a substrate at an oblique angle of incidence relative to the surface. Certain embodiments of the invention are adapted to direct two ion beam portions toward a substrate surface, the ion beam portions having substantially equal throw distances. Preferred embodiments of the invention may be useful in etching applications, where the angle of incidence and throw distance of two ion beam portions are well suited for etching the surface of a substrate.
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
C23C 14/56 - Appareillage spécialement adapté au revêtement en continuDispositifs pour maintenir le vide, p. ex. fermeture étanche
33.
Cylindrical target with oscillating magnet for magnetron sputtering
In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, means for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing magnetic field exterior to but adjacent the target, a framework for supporting the magnet against rotation within the target, and a power train for causing the magnet to oscillate within and axially of the target in a substantially asynchronous manner to promote generally uniform target utilization along its length, as well as its method of use. In some embodiments, the magnet is oscillated in response to rotation of the target.
brevets
