Proposed is a reading service device and method for supporting a reading activity. The reading service device includes a goal setting unit, when a goal for a reading activity is set by an administrator terminal that an administrator uses, updating the set reading activity goal and providing the updated reading activity goal to a learner terminal, a monitor monitoring the reading activity that is performed by the learner terminal that a learner uses, and a rewarder performing electronic payment for a reward prize of the reading activity goal when payment related to the reward prize is requested by the administrator terminal, retaining an ownership of the reward prize when the electronic payment is completed, and transferring the retained ownership of the reward prize to the learner terminal when a learning status of the learner terminal reaches the reading active goal.
G06Q 20/10 - Architectures de paiement spécialement adaptées aux systèmes de transfert électronique de fondsArchitectures de paiement spécialement adaptées aux systèmes de banque à domicile
Provided is a cylindrical ingot manufacturing method including: an operation of supplying a silicon raw material to an inside of a crucible and heating the crucible to melt the silicon raw material; an operation of supplying a seed crystal having one end fastened to a seed shaft to the inside of the crucible; and an operation of moving the seed crystal from a lower portion of the crucible to an upper portion thereof by the crucible rotating in one direction relative to the seed shaft and the seed shaft rotating in the other direction and moving upward. According to the present disclosure, since a ring-shaped seed crystal is grown, a cylindrical silicon ingot can be manufactured, and since a cylindrical silicon ingot having an inner diameter is formed, a wafer retaining ring can be manufactured from the ingot without a coring task.
C30B 15/24 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiréCommande de la section du cristal en utilisant des moyens mécaniques, p. ex. des guides de formage
C30B 15/36 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski caractérisée par le germe, p. ex. par son orientation cristallographique
Provided is a cylindrical ingot manufacturing method including: an operation of supplying a silicon raw material to an inside of a crucible and heating the crucible to melt the silicon raw material; an operation of supplying a seed crystal having one end fastened to a seed shaft to the inside of the crucible; and an operation of moving the seed crystal from a lower portion of the crucible to an upper portion thereof by the crucible rotating in one direction relative to the seed shaft and the seed shaft rotating in the other direction and moving upward. According to the present disclosure, since a ring-shaped seed crystal is grown, a cylindrical silicon ingot can be manufactured, and since a cylindrical silicon ingot having an inner diameter is formed, a wafer retaining ring can be manufactured from the ingot without a coring task.
C30B 15/24 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiréCommande de la section du cristal en utilisant des moyens mécaniques, p. ex. des guides de formage
C30B 15/36 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski caractérisée par le germe, p. ex. par son orientation cristallographique
C03C 23/00 - Autres traitements de surface du verre, autre que sous forme de fibres ou de filaments
C03B 37/014 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques
5.
EDGE RING FOR SEMICONDUCTOR MANUFACTURING PROCESS WITH DENSE BORON CARBIDE LAYER ADVANTAGEOUS FOR MINIMIZING PARTICLE GENERATION, AND THE MANUFACTURING METHOD FOR THE SAME
Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
A method of manufacturing synthetic quartz used for supporting and placing a wafer with a focus ring or edge ring ceramic member which is used during a semiconductor manufacturing process, and the present invention is directed to providing a method of manufacturing cylindrical synthetic quartz which is capable of improving a yield by minimizing temporal loss and quantitative loss and significantly increasing the rate of synthetic quartz production.
C01B 33/18 - Préparation de silice finement divisée ni sous forme de sol ni sous forme de gelPost-traitement de cette silice
B28B 11/24 - Appareillages ou procédés pour le traitement ou le travail des objets façonnés pour faire prendre ou durcir
B28B 1/32 - Fabrication d'objets façonnés à partir du matériau en appliquant le matériau sur un noyau ou une autre surface de moulage pour former une couche sur celle-ci par projection, p. ex. par pulvérisation
The present invention relates to a covering assembly for encompassing an electrostatic chuck in a plasma processing chamber formed to alleviate surface damage and feature profile tilting of a semiconductor substrate. The present invention relates to a covering assembly for a plasma processing chamber, the covering assembly being formed to encompass an electrostatic chuck having an upper end surface, which supports a substrate, and a stepped annular step at the upper end surface, and comprising: a quartz ring arranged in the annular step of the electrostatic chuck so as to encompass the side surfaces of the substrate and the electrostatic chuck, and having a coupling groove formed on the lower surface thereof; and an electrode ring coupled to the coupling groove of the quartz ring so as to maintain electrical contact with the electrostatic chuck on the horizontal plane of the annular step, wherein the quartz ring has an internal transmittance of 99% or greater. According to the present invention, the surface damage and feature profile tilting of the semiconductor substrate can be alleviated.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
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