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Résultats pour
brevets
1.
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APPARATUS FOR MANUFACTURING FINE POWDER OF HIGH PURITY SILICON
| Numéro d'application |
KR2011008342 |
| Numéro de publication |
2012/064047 |
| Statut |
Délivré - en vigueur |
| Date de dépôt |
2011-11-11 |
| Date de publication |
2012-05-18 |
| Propriétaire |
- TOWN MINING CO., LTD. (Japon)
- C.S. LABORATORY IN TECHNOLOGY LTD. (Japon)
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| Inventeur(s) |
- Shimamune, Takayuki
- Kato, Kenji
- Sakata, Toyoaki
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Abrégé
The present invention relates to an apparatus for manufacturing a fine powder of high purity silicon, and the apparatus for manufacturing a fine powder of high purity silicon is characterized by comprising: (1) a device for supplying zinc gas by heating and evaporating metallic zinc above the boiling point of zinc; (2) a device for supplying liquid silicon tetrachloride from among the zinc gases;(3) a device for generating a reactive gas containing silicon particles by reaction through mix-stirring of the zinc gas and the liquid silicon tetrachloride; (4) a device for precipitating a portion of the gaseous component while simultaneously growing the generated silicon particles as the reactive gas temperature is lowered to between 300oC and 800oC; (5) a device for obtaining solid silicon by evaporation of water and heating to above 950 degrees while simultaneously maintaining precipitation; and (6) a device for exhaust gas for discharging off exhaust gas that includes un-reacted gases, etc. and includes evaporated water.
Classes IPC ?
- C01B 33/039 - Purification par conversion du silicium en un composé, purification éventuelle du composé et reconversion en silicium
- B01J 19/24 - Réacteurs fixes sans élément interne mobile
- B01D 21/02 - Bacs de décantation
- B01D 53/00 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols
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2.
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EXHAUST GAS PROCESSING DEVICE
| Numéro d'application |
KR2011008344 |
| Numéro de publication |
2012/064048 |
| Statut |
Délivré - en vigueur |
| Date de dépôt |
2011-11-03 |
| Date de publication |
2012-05-18 |
| Propriétaire |
- TOWN MINING CO., LTD. (Japon)
- C.S.LABORATORY IN TECHNOLOGY LTD. (Japon)
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| Inventeur(s) |
- Shimamune, Takayuki
- Kato, Kenji
- Sakata, Toyoaki
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Abrégé
The present invention relates to processing of exhaust gas generated from the manufacture of silicon by reduction of zinc, and to an apparatus for processing exhaust gas, comprising: a dissolved gas absorbing device for absorbing gas emitted by introduction of aqueous zinc chloride solution from the top of a cycle tower; a device for circulating the aqueous zinc chloride solution; a device for filtering the aqueous zinc chloride solution which has absorbed the generated exhaust gas; a device for adjusting the density of the aqueous zinc chloride solution which has absorbed the generated exhaust gas; and a device for maintaining the treated aqueous zinc chloride solution.
Classes IPC ?
- B01D 53/14 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par absorption
- B01D 53/78 - Procédés en phase liquide avec un contact gaz-liquide
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3.
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APPARATUS FOR MANUFACTURING FINE POWDER OF HIGH PURITY SILICON.
| Numéro d'application |
KR2011008341 |
| Numéro de publication |
2012/064046 |
| Statut |
Délivré - en vigueur |
| Date de dépôt |
2011-11-03 |
| Date de publication |
2012-05-18 |
| Propriétaire |
- TOWN MINING CO., LTD. (Japon)
- C.S.LABORATORY IN TECHNOLOGY LTD. (Japon)
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| Inventeur(s) |
- Shimamune, Takayuki
- Kato, Kenji
- Sakata, Toyoaki
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Abrégé
The present invention relates to an apparatus for manufacturing fine particles of high purity silicon, and comprises: (1) a device for heating and evaporating metallic zinc above the boiling point of zinc and simultaneously supplying zinc gas at above 1000oC by heating the generated gas; (2) a device for supplying liquid silicon tetrachloride from among the zinc gases; (3) a device for generating a reactive gas containing silicon particles by reaction through mix-stirring of the zinc gas and the liquid silicon tetrachloride; (4) a device for growing by flocculation, silicon particles which are generated as the reactive gas temperature is lowered below 1000oC; and (5) a device for recovering precipitates for precipitating and recovering silicon from aqueous solution by contacting an aqueous solution of zinc chloride with the gaseous substance containing the reactive gas and the grown silicon particles.
Classes IPC ?
- C01B 33/039 - Purification par conversion du silicium en un composé, purification éventuelle du composé et reconversion en silicium
- B01J 19/24 - Réacteurs fixes sans élément interne mobile
- B01D 21/02 - Bacs de décantation
- B01D 53/00 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols
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