ICT Intergrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Kruit, Pieter
Kamerbeek, Martin
Guo, Xiaoli
Gabold, Henrik
Abrégé
A multi-aperture lens plate of a multi-beam generator for a charged particle multi-beam apparatus is described. The multi-aperture lens plate includes an aperture lens plate body, the aperture lens plate body comprising: an array of N beamlet openings, the array of N beamlet openings having beamlet openings, the array of N beamlet openings configured to generate N primary charged particle beamlets, wherein N is a number >=2; and a plurality of correction openings through the aperture lens plate body configured to locally influence a lens field of the beamlet openings, wherein the correction openings are different than the beamlet openings.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
TECHNISCHE UNIVERSITEIT DELFT (Pays‑Bas)
Inventeur(s)
Kruit, Pieter
Abrégé
An optical system configured to focus a plurality of primary beamlets of a multi-beam apparatus is described. The optical system a first multipole arrangement with a plurality of first multipoles to provide a first astigmatism and a second multipole arrangement with a plurality of second multipoles to provide a second astigmatism, wherein the first astigmatism and the second astigmatism compensate each other. The optical system further includes three or more electrodes forming a plurality of electrostatic lenses for the plurality of primary beamlets, each electrode with an electrode body and a plurality of openings in the electrode body for guiding one primary beamlet of the plurality of primary beamlets through one opening of the plurality of openings; and an electrical connection to provide a potential to the electrode body at the plurality of openings.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Kruit, Pieter
Abrégé
An optical system configured to focus a plurality of primary beamlets of a multi-beam apparatus is described. The optical system a first multipole arrangement with a plurality of first multipoles to provide a first astigmatism and a second multipole arrangement with a plurality of second multipoles to provide a second astigmatism, wherein the first astigmatism and the second astigmatism compensate each other. The optical system further includes three or more electrodes forming a plurality of electrostatic lenses for the plurality of primary beamlets, each electrode with an electrode body and a plurality of openings in the electrode body for guiding one primary beamlet of the plurality of primary beamlets through one opening of the plurality of openings; and an electrical connection to provide a potential to the electrode body at the plurality of openings.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Kruit, Pieter
Bardy, Stanislav
Abrégé
A signal electron beam deflector for an electron beam apparatus is provided. The signal electron beam deflector includes a first electrode extending in a curved manner; and a second electrode extending in a curved manner and having at least one electron transparent portion configured for a signal electron beam to pass through the at least one electron transparent portion. The first electrode and the second electrode are arranged adjacent to each other to form a space between the first electrode and the second electrode. The space has an entrance opening and an exit opening; a first optical path is provided between the entrance opening and the exit opening; and a second optical path is provided between the entrance opening and the at least one electron transparent portion of the second electrode.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Zimmermann, Robert
Abrégé
A deflector for a charged particle beam apparatus is described. The deflector has an axis and is configured to deflect a charged particle beam in a direction perpendicular to the axis, the deflector including a plurality of flat coils including two pairs of flat coils, wherein the two pairs of flat coils are arranged on opposite sides about the axis of the deflector.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Kruit, Pieter
Abrégé
A method of characterizing a detection path in a charged particle beam system having a primary charged particle beam, comprising positioning a charged particle mirror having a curved equipotential surface on a sample stage of the charged particle beam system; varying a reflection angle of the primary charged particle beam at the curved equipotential surface by varying a relative mirror position of the charged particle mirror, the curved equipotential surface being at a distance to a surface of the charged particle mirror, recording a plurality of detector signals of at least one detector of the charged particle beam system for a plurality of relative mirror positions; wherein varying a relative mirror position of the charged particle mirror comprises varying at least one of a mirror position of the charged particle mirror and a primary charged particle beam position with respect to each other in at least one dimension.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Bardy, Stanislav
Adamec, Pavel
Abrégé
A method of operating a charged particle beam apparatus is described. The method includes guiding a primary charged particle beam through an opening of an on-axis detector, through an intermediate lens, through an objective lens, and onto a specimen, wherein the intermediate lens is disposed between the on-axis detector and the objective lens; focusing the primary charged particle beam with the objective lens onto the specimen; in a first mode of operation, providing an excitation of the intermediate lens to collimate high energy signal electrons including backscattered electrons to the opening of the on-axis detector; in the first mode of operation, detecting low energy signal electrons including secondary electrons with the on-axis detector; and in the first mode of operation, detecting the backscattered electrons with a second electron detector upstream of the on-axis detector. Also a corresponding charged particle beam apparatus is described.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Schabinger, Birgit
Winkler, Dieter
Nahum, Eyal
Abrégé
A detector device (10) for detecting signal electrons in an electron beam apparatus (100) is described. The detector device (10) includes an electron detector (120) with a central opening (23) for the passage of a primary electron beam (105) and with one or more radially inner detector segments (21) and one or more radially outer detector segments (22) that at least partially surrounds the central opening. The detector device is configured to amplify one or more first detector signals caused by a first group of signal electrons impinging on the one or more radially inner detector segments (21) with a first amplification strength while amplifying one or more second detector signals caused by a second group of signal electrons impinging on the one or more radially outer detector segments (22) with a second amplification strength higher than the first amplification strength. Further described is an electron beam apparatus with the detector device described herein, as well as a method of imaging and/or inspecting a sample with an electron beam apparatus as described herein.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Heinrich, Stephan
Abrégé
A proximity-electrode for a charged particle beam device is provided, the proximity-electrode including a body having an aperture within the body, and the body having a plurality of protrusions cantilevering radially into the aperture, and the aperture and the protrusions having an n-fold rotational symmetry, where n is an integer.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Kruit, Pieter
Abrégé
An electron beam apparatus (100) is described, including an electron source (105) configured to generate a primary electron beam propagating along an optical axis (A), a sample stage (108) configured to support a sample, an objective lens (120) configured to focus the primary electron beam on the sample for causing an emission of a signal electron beam and a foil or grid lens (300, 400) for influencing the signal electron beam. The foil or grid lens includes an electrode (340) that surrounds the optical axis; and a first foil or grid (320) adjacent to the electrode and perpendicular to the optical axis, the first foil or grid being substantially transparent to electrons, wherein a central opening (325) configured to allow the primary electron beam to pass through the central opening is provided in the first foil or grid.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Kruit, Pieter
Abrégé
An electron beam apparatus (100) is described, including an electron source (105) configured to generate a primary electron beam propagating along an optical axis (A), a sample stage (108) configured to support a sample, an objective lens (120) configured to focus the primary electron beam on the sample for causing an emission of a signal electron beam and a foil or grid lens (300, 400) for influencing the signal electron beam. The foil or grid lens includes an electrode (340) that surrounds the optical axis; and a first foil or grid (320) adjacent to the electrode and perpendicular to the optical axis, the first foil or grid being substantially transparent to electrons, wherein a central opening (325) configured to allow the primary electron beam to pass through the central opening is provided in the first foil or grid.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Abrégé
A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100), comprising: (a) taking one or more images (h1 . . . N) of the sample when the sample is arranged at one or more defocus distances (z1 . . . N) from a respective beam focus of the charged particle beam, and retrieving one or more retrieved beam profiles (g1 . . . N) from the one or more images (h1 . . . N); (b) simulating one or more beam profiles at the one or more defocus distances (z1 . . . N) based at least on an estimated beam convergence value (initialC) of the charged particle beam to provide one or more simulated beam profiles (g′1 . . . N); (c) determining a magnitude (R) of a difference between the one or more simulated beam profiles (g′1 . . . N) and the one or more retrieved beam profiles (g1 . . . N); and (d) varying the estimated beam convergence value in an iterative process for reducing or minimizing said magnitude (R) to determine an actual beam convergence value (actualC). Furthermore, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of the methods described herein is provided.
ICT Integrated Circuit Testing Gesellschaft fur Halbleiterpruftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Ehberger, Dominik
Abrégé
A method of determining an energy spectrum or energy width of a charged particle beam (11) focused by a focusing lens (120) toward a sample plane (pS) in a charged particle beam imaging device is described. The method includes (a) introducing an energy-dependent deflection of the charged particle beam (11) that leads to a spot broadening along a dispersion axis in the sample plane (pS), and taking an image of a sample (10) arranged in the sample plane using the charged particle beam; (b) retrieving a beam profile of the charged particle beam from the image; and (c) determining the energy spectrum or energy width from the beam profile. Further embodiments described herein relate to a charged particle beam imaging device configured to determine the energy spectrum or energy width of a charged particle beam, particularly according to any of the methods described herein.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - DétecteursComposants ou circuits associés
14.
ABERRATION CORRECTOR, A CHARGED PARTICLE BEAM APPARATUS, A METHOD OF ALIGNING AN ABERRATION CORRECTOR AND A METHOD OF CORRECTING ABERRATION OF A CHARGED PARTICLE BEAM
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Lampersberger, Florian
Breuer, John
Firnkes, Matthias
Abrégé
An aberration corrector. The aberration corrector including a first plurality of magnetic elements, each magnetic element comprising a magnetic pole and a corresponding magnetic rod for providing a magnetic field to the magnetic pole. The first plurality of magnetic elements including at least a first magnetic element, the first magnetic element including a first magnetic pole; a first magnetic rod having a proximal end adjacent to the first magnetic pole and a distal end opposite the proximal end; the proximal end having a tip with a tip surface in a shape of a semi-spheroid; and a contact point of the tip surface contacts the first magnetic pole.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin
Kruit, Pieter
Abrégé
A charged particle optics for a charged particle beam apparatus having a charged particle beam and a beam propagation direction of the charged particle beam apparatus is described. The charged particle optics includes a focusing lens. The focusing lens includes a first electrode with a first aperture; a second electrode with a second aperture, the second electrode being mechanically movable at least in a first direction perpendicular to the beam propagation direction; and an actuator coupled to the second electrode to move the second electrode in at least the first direction for displacement of the second aperture with respect to the first aperture. The charged particle optics further includes a deflection system positioned upstream of the second electrode to deflect the charged particle beam, based on the displacement, to guide the charged particle beam through the second aperture.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Ehberger, Dominik Patrick
Mohler, Kathrin
Liska, Ivo
Abrégé
A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterpüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Kruit, Pieter
Abrégé
A charged particle beam chromatic aberration corrector is described. The charged particle beam chromatic aberration corrector includes a plurality of electrical conductors forming a segmented Wien filter including a plurality of Wien filter segments having at least a first Wien filter segment and a second Wien filter segment, wherein the first Wien filter segment is arranged for traversal of a first portion of the charged particle beam, and the second Wien filter segment is arranged for traversal of a second portion of the charged particle beam; and a power supply system configured for generating different electric fields and different magnetic fields for the first Wien filter segment and second Wien filter segment.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin
Kruit, Pieter
Abrégé
A lens for a charged particle beam apparatus, the lens having lens components, is described. The lens includes a first magnetic lens having an upper pole piece and a middle pole piece; a second magnetic lens having the middle pole piece and a lower pole piece; a first coil arranged in the first magnetic lens and to provide a first magnetic field between the upper pole piece and the middle pole piece; a second coil arranged in the second magnetic lens and to provide a second magnetic field between the middle pole piece and the lower pole piece; and an electrostatic lens having an upper electrode and a lower electrode, wherein at least one of a first inner diameter defined by the upper pole piece and a second inner diameter defined by the middle pole piece is larger than a third inner diameter of the lower pole piece.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Kruit, Pieter
Breuer, John
Abrégé
A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.
H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
20.
Method of determining a brightness of a charged particle beam, method of determining a size of a source of the charged particle beam, and charged particle beam imaging device
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Ehberger, Dominik
Firnkes, Matthias
Abrégé
virt) of a source (105) of the charged particle beam (11). Further, a charged particle beam imaging device (100) configured for any of the methods described herein is provided.
G01N 15/00 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
G01N 15/0205 - Recherche de la dimension ou de la distribution des dimensions des particules par des moyens optiques
21.
MAGNETIC MULTIPOLE DEVICE, CHARGED PARTICLE BEAM APPARATUS, AND METHOD OF INFLUENCING A CHARGED PARTICLE BEAM PROPAGATING ALONG AN OPTICAL AXIS
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin
Abrégé
A magnetic multipole device for influencing a charged particle beam propagating along an optical axis is provided. The magnetic multipole device includes a first magnetic deflector for deflecting the charged particle beam in an x-direction with a plurality of first saddle coils; and a second magnetic deflector for deflecting the charged particle beam in a y-direction perpendicular to the x-direction with a plurality of second saddle coils. The first and second saddle coils are arranged around the optical axis in a 12-pole magnetic corrector structure with 12 poles provided at uniformly spaced angular intervals. The 12-pole magnetic corrector structure is configured to exert a beam correction field of a magnetic 12-pole corrector on the charged particle beam. Further provided are a charged particle beam apparatus with a magnetic multipole device and a method of influencing a charged particle beam propagating along an optical axis with a magnetic multipole device as described herein.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Abrégé
1); (d.) taking one or more images of the sample at the one or more first defocus settings or at one or more second defocus settings, to provide one or more taken images, and retrieving one or more retrieved beam cross sections from the one or more taken images; (e.) extracting a retrieved value of the first aberration characteristic from the one or more retrieved beam cross sections; and (f.) determining an actual value of the first beam aberration coefficient based on the first dependency and based on the retrieved value of the first aberration characteristic.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
An electron, microscope (100) is described. The electron microscope comprises an electron source (110) for generating an electron beam, a condenser lens (130) for collimating the electron beam downstream of the electron source, and an objective lens (140) for focusing the electron beam onto a specimen (16). The electron source comprises a cold field emitter with an emission tip (112), an extractor electrode (114) for extracting the electron beam (105) from the cold field emitter for propagation along an optical axis (A), the extractor electrode having a first opening (115) configured, as a first beam limiting aperture, a first cleaning arrangement (121) for cleaning the emission tip (112) by heating the emission tip, and a second cleaning arrangement (122) for cleaning the extractor electrode (114) by heating the extractor electrode. Further described is a method of operating such an electron microscope.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
An electron microscope (100) is described. The electron microscope comprises an electron source (110) for generating an electron beam, a condenser lens (130) for collimating the electron beam downstream of the electron source, and an objective lens (140) for focusing the electron beam onto a specimen (16). The electron source comprises a cold field emitter with an emission tip (112), an extractor electrode (114) for extracting the electron beam (105) from the cold field emitter for propagation along an optical axis (A), the extractor electrode having a first opening (115) configured as a first beam limiting aperture, a first cleaning arrangement (121) for cleaning the emission tip (112) by heating the emission tip, and a second cleaning arrangement (122) for cleaning the extractor electrode (114) by heating the extractor electrode. Further described is a method of operating such an electron microscope.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Firnkes, Matthias
Abrégé
A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample H O) in a charged particle beam system ( 100) is provided. The 'method includes (a) taking one or more images of the sample when the sample is arranged at one or 'more defocus distances from a 'respecti ve beam focus of the charged particle beam.; (b) retrieving one or more beam, cross sections from 'the one or more images; (c) determining one or more beam widths from the one or more beam, cross sections; and (d.) calculating at least one beam convergence value based on the one or more beam widths and the one or more defocus distances. Further, a charged panicle beam system for imaging and or inspecting a sample that is configured for any of the methods described herein is provided.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Firnkes, Matthias
Abrégé
11...N); (b) simulating one or more images of the sample taken at the one or more defocus settings based on a set of beam aberration coefficients (iii) of a difference therebetween; and (d) varying the set of beam aberration coefficients (*C) to provide an updated set of beam aberration coefficients (i+1C) and repeating (b) and (c) using the updated set of beam aberration coefficients (i+1iii) of a difference therebetween. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of such methods is provided.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Firnkes, Matthias
Abrégé
A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100) is provided. The method includes (a) taking one or more images of the sample when the sample is arranged at one or more defocus distances from a respective beam focus of the charged particle beam; (b) retrieving one or more beam cross sections from the one or more images; (c) determining one or more beam widths from the one or more beam cross sections; and (d) calculating at least one beam convergence value based on the one or more beam widths and the one or more defocus distances. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of the methods described herein is provided.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Ehberger, Dominik
Breuer, John
Firnkes, Matthias
Abrégé
i) of a difference therebetween. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of such methods is provided.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lampersberger, Florian
Breuer, John
Kemen, Thomas
Prazot Ofenburg, Shem Yehoyda
Abrégé
Provided is an aberration corrector (101) having a plurality of magnetic poles (210, 211) including a first magnetic pole (210) and further magnetic poles (211), a ring (240) that magnetically connects the plurality of magnetic poles with one another, the ring having a constant spacing to at least the first magnetic pole, a plurality of magnetic field modulators (220, 221) including a first magnetic field modulator (220) and further magnetic field modulators (221), and a plurality of guides (450) including a first guide and further guides; wherein the first magnetic field modulator includes a soft magnetic material, wherein the first magnetic field modulator is disposed in a first position, the first position being one of the following: adjacent to a first air gap (230) separating the first magnetic pole and the ring, or at an inner ring surface (241) or radially outward of the inner ring surface along an axis of the first magnetic pole, and wherein the first guide constrains the first magnetic field modulator to positions along a first axis substantially parallel to or coincident with the axis of the first magnetic pole.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lampersberger, Florian
Breuer, John
Kernen, Thomas
Prazot Ofenburg, Shem Yehoyda
Abrégé
Provided is an aberration corrector having a plurality of magnetic poles including a first magnetic pole and further magnetic poles, a ring that magnetically connects the plurality of magnetic poles with one another, the ring having a constant spacing to at least the first magnetic pole, a plurality of magnetic field modulators including a first magnetic field modulator and further magnetic field modulators, and a plurality of guides including a first guide and further guides; wherein the first magnetic field modulator includes a soft magnetic material, wherein the first magnetic field modulator is disposed in a first position, the first position being one of the following: adjacent to a first air gap separating the first magnetic pole and the ring, or at an inner ring surface or radially outward of the inner ring surface along an axis of the first magnetic pole, and wherein the first guide constrains the first magnetic field modulator to positions along a first axis substantially parallel to or coincident with the axis of the first magnetic pole.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterriftechnik mbH (Allemagne)
Inventeur(s)
Ehberger, Dominik Patrick
Breuer, John
Goldenshtein, Alex
Abrégé
A charged particle beam apparatus with a charged particle source to generate a primary charged particle beam, a sample holder to hold a sample for impingement of the primary charged particle beam on the sample, a pulsed laser configured to generate a pulsed light beam for impingement onto an area on the sample, and an electrode to collect electrons emitted from the sample in a non-linear photoemission.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Thomann, Markus
Kemen, Thomas
Barday, Roman
Abrégé
A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
33.
METHOD OF INFLUENCING A CHARGED PARTICLE BEAM, MULTIPOLE DEVICE, AND CHARGED PARTICLE BEAM APPARATUS
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Wöllert, Bernd
Winkler, Dieter
Abrégé
A method of influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam (11) through at least one opening (102) of a multipole device (100, 200) that comprises a first multipole (110, 210) with four or more first electrodes (111, 211) and a second multipole (120, 220) with four or more second electrodes (121, 221) arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device (100, 200) with a first multipole (110, 210) and a second multipole (120, 220) provided on the same substrate as well as a charged particle beam apparatus (500) with a multipole device (100, 200) are provided.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Woellert, Bernd
Winkler, Dieter
Abrégé
A method of influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam (11) through at least one opening (102) of a multipole device (100, 200) that comprises a first multipole (110, 210) with four or more first electrodes (111, 211) and a second multipole (120, 220) with four or more second electrodes (121, 221) arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device (100, 200) with a first multipole (110, 210) and a second multipole (120, 220) provided on the same substrate as well as a charged particle beam apparatus (500) with a multipole device (100, 200) are provided.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axis (A) is arranged, a second vacuum region (122) downstream of the first vacuum region and separated from the first vacuum region by a first gas separation wall (132) with a first differential pumping aperture (131), wherein the first differential pumping aperture (131) is configured as a first beam limiting aperture for the charged particle beam (102); and a third vacuum region (123) downstream of the second vacuum region and separated from the second vacuum region by a second gas separation wall (134) with a second differential pumping aperture (133), wherein the second differential pumping aperture (133) is configured as a second beam limiting aperture for the charged particle beam (102). Further described are a scanning electron microscope and a method of operating a charged particle beam apparatus.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axis (A) is arranged, a second vacuum region (122) downstream of the first vacuum region and separated from the first vacuum region by a first gas separation wall (132) with a first differential pumping aperture (131), wherein the first differential pumping aperture (131) is configured as a first beam limiting aperture for the charged particle beam (102); and a third vacuum region (123) downstream of the second vacuum region and separated from the second vacuum region by a second gas separation wall (134) with a second differential pumping aperture (133), wherein the second differential pumping aperture (133) is configured as a second beam limiting aperture for the charged particle beam (102). Further described are a scanning electron microscope and a method of operating a charged particle beam apparatus.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Abrégé
It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.
H01J 37/145 - Combinaisons de lentilles électrostatiques et magnétiques
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Breuer, John
Droese, Christian
Abrégé
It is provided a current measurement module (100) for measuring a current of a primary charged particle beam (123) of a charged particle beam device, the current measurement module (100) including a detection unit (160) configured for detecting secondary and/or backscattered charged particles (127) released on impingement of the primary charged particle beam (123) on a conductive surface (142) of a beam dump (140) of the charged particle beam device.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Droese, Christian
Abrégé
It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Winkler, Dieter
Wöllert, Bernd
Schabinger, Birgit
Abrégé
A charged particle beam device 10 for imaging and/or inspecting a sample 140 is described. The charged particle beam device includes a beam emitter 150 for emitting a primary charged particle beam 105; a retarding field device 100 for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens 110 and a proxy electrode 130; and a first detector 120 for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis 101 to the sample for releasing signal particles. The proxy electrode includes one opening 131 allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0° to 20° or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/244 - DétecteursComposants ou circuits associés
41.
Charged particle beam device and method for inspecting and/or imaging a sample
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Wöllert, Bernd
Schabinger, Birgit
Abrégé
A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam; a retarding field device for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode; and a first detector for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis to the sample for releasing signal particles. The proxy electrode includes one opening allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0° to 20° or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Winkler, Dieter
Wöllert, Bernd
Schabinger, Birgit
Abrégé
A charged particle beam device 10 for imaging and/or inspecting a sample 140 is described. The charged particle beam device includes a beam emitter 150 for emitting a primary charged particle beam 105, the charged particle beam device adapted for guiding the primary charged particle beam along an optical axis 101 to the sample for releasing signal particles; a retarding field device 100 for retarding the primary charged particle beam before impinging on the sample, the retarding field device including an objective lens 110 and a proxy electrode 130, wherein the proxy electrode includes an opening 131 allowing a passage of the primary charged particle beam and of the signal particles; a first detector 120 for off-axial backscattered particles between the proxy electrode and the objective lens; and a pre-amplifier 121 for amplifying a signal of the first detector, wherein the pre-amplifier is at least one of (i) integrated with the first detector, (ii) arranged adjacent to the first detector inside a vacuum housing 102 of the charged particle beam device, and (iii) fixedly mounted in a vacuum chamber of the charged particle beam device. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/244 - DétecteursComposants ou circuits associés
43.
Charged particle beam device and method for inspecting and/or imaging a sample
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Wöllert, Bernd
Schabinger, Birgit
Abrégé
A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam, the charged particle beam device adapted for guiding the primary charged particle beam along an optical axis to the sample for releasing signal particles; a retarding field device for retarding the primary charged particle beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode, wherein the proxy electrode includes an opening allowing a passage of the primary charged particle beam and of the signal particles; a first detector for off-axial backscattered particles between the proxy electrode and the objective lens; and a pre-amplifier for amplifying a signal of the first detector, wherein the pre-amplifier is at least one of (i) integrated with the first detector, (ii) arranged adjacent to the first detector inside a vacuum housing of the charged particle beam device, and (iii) fixedly mounted in a vacuum chamber of the charged particle beam device. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
44.
Electrode arrangement, contact assembly for an electrode arrangement, charged particle beam device, and method of reducing an electrical field strength in an electrode arrangement
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lampersberger, Florian
Salvesen, Carlo
Abrégé
An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/244 - DétecteursComposants ou circuits associés
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Reuveni, Rony
Goldenstein, Alexander
Abrégé
A method of operating a charged particle beam device is disclosed, including focusing a charged particle beam onto a sample with an objective lens assembly; passing a reflected light beam through a bore of the objective lens assembly to an interferometer; and interferometrically determining a z-position of the sample with the interferometer. A charged particle beam device is disclosed, including a charged particle beam generator which has a charged particle source. A charged particle path for the charged particle beam extends through a bore of an objective lens assembly toward a sample stage. An interferometer is arranged to receive a reflected light beam which passes through the bore of the objective lens assembly.
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
46.
METHOD OF OPERATING A CHARGED PARTICLE GUN, CHARGED PARTICLE GUN, AND CHARGED PARTICLE BEAM DEVICE
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Winkler, Dieter
Abrégé
A method of operating a charged particle gun (102) is described. The method includes providing an emitter (122) at a first emitter potential within the charged particle gun and providing a trapping electrode (142) at a first electrode potential within the charged particle gun, wherein the first emitter potential and the first electrode potential is provided to have an electrical field of essentially zero at the emitter and at the trapping electrode; switching the trapping electrode from the first electrode potential to a second electrode potential different from the first electrode potential to generate an electrostatic trapping field at the trapping electrode; and after switching the trapping electrode from the first electrode potential to the second electrode potential, switching on an electrostatic emission field at the emitter.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Abrégé
A charged particle gun for a charged particle beam device is described. The charged particle gun includes a gun housing; an emitter provided in the gun housing, the emitter being configured to emit a charged particle beam along an axis; an emitter power supply connected to the emitter; a trapping electrode provided in the gun housing, the trapping electrode at least partially surrounding the axis; a trapping power supply connected to the trapping electrode; and a shielding element shielding an electrostatic field of the trapping electrode from the axis during operation of the gun housing.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Horgan, Eoin
Abrégé
A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - DétecteursComposants ou circuits associés
49.
BEAM BLANKING DEVICE FOR A MULTI-BEAMLET CHARGED PARTICLE BEAM APPARATUS
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Horgan, Eoin
Abrégé
A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lampersberger, Florian
Lanio, Stefan
Abrégé
A secondary charged particle imaging system comprising: a backscattered electron detector module, wherein the backscattered electron detector module is rotatable between a first angular position (5452) and a second angular position (5454) about an axis.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/244 - DétecteursComposants ou circuits associés
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lampersberger, Florian
Lanio, Stefan
Abrégé
A secondary charged particle imaging system comprising: a backscattered electron detector module, wherein the backscattered electron detector module is rotatable between a first angular position and a second angular position about an axis.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Abrégé
The charged particle beam device (100) includes a charged particle source (105) and a beamlet-forming multiaperture plate (110). The device also includes a precompensator (120) for reducing aberrations of the beamlets at a target, a scanner for scanning each of the beamlets, an objective lens (109) for focusing each beamlet onto the target, and a controller configured to synchronize the precompensator and the scanner. The precompensator includes: at least one "radially variable" multiaperture electrode (121) in which the diameter of each aperture thereof scales with the distance of the aperture from the optical axis, z; and at least one "cartesianally variable" multiaperture electrode (122) in which the diameter of each aperture thereof scales with an x component of the position of the aperture.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Abrégé
The charged particle beam device includes a charged particle source and a beamlet-forming multiaperture plate. The device also includes a precompensator for reducing aberrations of the beamlets at a target, a scanner for scanning each of the beamlets, an objective lens for focusing each beamlet onto the target, and a controller configured to synchronize the precompensator and the scanner. The precompensator includes: at least one “radially variable” multiaperture electrode in which the diameter of each aperture thereof scales with the distance of the aperture from the optical axis, z; and at least one “cartesianally variable” multiaperture electrode in which the diameter of each aperture thereof scales with an x component of the position of the aperture.
ICT Integrated Circuit Testing Gesellschaft für Halbletterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Abrégé
A method of operating a charged particle gun is described. The method includes providing an emitter at a first emitter potential within the charged particle gun and providing a trapping electrode at a first electrode potential within the charged particle gun, wherein the first emitter potential and the first electrode potential is provided to have an electrical field of essentially zero at the emitter and at the trapping electrode; switching the trapping electrode from the first electrode potential to a second electrode potential different from the first electrode potential to generate an electrostatic trapping field at the trapping electrode; and after switching the trapping electrode from the first electrode potential to the second electrode potential, switching on an electrostatic emission field at the emitter.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Breuer, John
Lampersberger, Florian
Kaupp, Hanno
Lanio, Stefan
Abrégé
A charged particle beam device for inspecting a specimen is described. The charged particle beam device includes a beam source for emitting a charged particle beam, an electrode for influencing the charged particle beam, and a damping unit provided on the electrode for damping vibrations of the electrode. Further, an objective lens module with an electrode is described, wherein a damping unit is provided on the electrode. Further, an electrode device is described, wherein a mass damper is mounted on a disk-shaped electrode body of the electrode device.
H01J 37/285 - Microscopes à émission, p. ex. microscopes à émission de champ
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/145 - Combinaisons de lentilles électrostatiques et magnétiques
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Winkler, Dieter
Cook, Benjamin John
Abrégé
A beam splitter for generating a plurality of charged particle beamlets from a charged particle source is disclosed. The beam splitter includes a plurality of beamlet deflectors, which each pass a beamlet along an optical axis. Each beamlet deflector includes a low order element and a corresponding high order element. Each low order element has fewer electrodes than each corresponding high order element; and each low order element is one of a plurality of low order elements; and each corresponding high order element is one of a plurality of high order elements.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Schmid, Ralf
Abrégé
A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector (6) and a scanner (12), in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet (4A) is focused on a first spot (40A) and a second beamlet (4D) is focused on a second spot (40D). In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point (100). In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point (105), the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot (45A).
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Schmid, Ralf
Abrégé
A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector and a scanner, in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet is focused on a first spot and a second beamlet is focused on a second spot. In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point. In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point, the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
59.
Charged particle beam device, interchangeable multi-aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Jasinski, Thomas
Abrégé
A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Kemen, Thomas
Cook, Benjamin John
Barday, Roman
Abrégé
A charged particle beam device (100) is described, which includes: a beam source (105) configured to generate a charged particle beam (101) propagating along an optical axis (A); an aperture device (110) with a plurality of apertures configured to create a plurality of beamlets (102) from the charged particle beam; and a field curvature corrector (120). The field curvature corrector (120) includes: a first multi-aperture electrode (121) with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode (122) with a second plurality of openings; and an adjustment device (132) configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode (121) and a second electrical potential (U2) of the second multi-aperture electrode (122). Further, a field curvature corrector (120) and methods of operating a charged particle beam device are described.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Kemen, Thomas
Cook, Benjamin John
Barday, Roman
Abrégé
A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a plurality of apertures configured to create a plurality of beamlets from the charged particle beam; and a field curvature corrector. The field curvature corrector includes: a first multi-aperture electrode with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode with a second plurality of openings; and an adjustment device configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode and a second electrical potential (U2) of the second multi-aperture electrode. Further, a field curvature corrector and methods of operating a charged particle beam device are described.
H01J 37/07 - Élimination des effets nuisibles dus à des effets thermiques ou à des champs électriques ou magnétiques
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/244 - DétecteursComposants ou circuits associés
62.
Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Abrégé
A multi-beam charged particle beam device is described. The multi-beam charged particle beam device includes a charged particle source configured to emit a primary charged particle beam; an aperture arrangement having openings configured to generate at least a first beamlet and a second beamlet of the primary charged particle beam; and a blanking device, the blanking device includes at least a first blanking deflector for the first beamlet and a second blanking deflector for the second beamlet; and a shield assembly having a first shielding element partially or fully surrounding the first blanking deflector.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
63.
Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Abrégé
A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A charged particle beam arrangement is described. The charged particle beam arrangement includes a charged particle source including a cold field emitter, a beam limiting aperture between the charged particle source and a magnetic condenser lens; the magnetic condenser lens comprising a first inner pole piece and a first outer pole piece, wherein a first axial distance between the charged particle source and the first inner pole piece is equal or less than approximately 20 mm, an acceleration section for accelerating the charged particle beam to an energy of 10 keV or more, a magnetic objective lens comprising a second inner pole piece and a second outer pole piece, a third axial distance between the second inner pole piece and a surface of a specimen is equal to or less than approximately 20 mm, and a deceleration section.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Abrégé
A charged particle beam dump for a charged particle beam device is described. The beam dump includes an annular shaped body having an inner perimeter wall that defines an open annulus for passing of primary charged particle beamlets, the annular shaped body further having an outer perimeter wall and a bottom wall; and an annular shaped electrode provided partially above the annular shaped body having an inner perimeter side and an outer perimeter side, wherein the inner perimeter side is outside of the radius of the inner perimeter wall of the annular shaped body.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
66.
Device and method for forming a plurality of charged particle beamlets
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
Disclosed herein is charged particle beam device and a a method of operating a charged particle beam device, comprising forming a plurality of focused charged particle beamlets. Charged particles are directed from a charged particle source to a multi-aperture plate. A plurality of beamlets are passed through a plurality of apertures of the multi-aperture plate. The beamlets include an inner beamlet of charged particles and a plurality of outer beamlets of charged particles. The outer beamlets are focused to form a plurality of outer focal points on a virtual ring having a center along an optical axis, the outer beamlets subjected to a field curvature aberration, such that the virtual ring is axially displaced relative to a virtual focal point of an uncompensated inner beamlet. A compensated inner beamlet is focused to a compensated focal point. The inner beamlet is compensated to form the compensated inner beamlet; and the compensated focal point is coplanar with the virtual ring.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Eytan, Guy
Nir, Zvi
Abrégé
A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a first number of apertures configured to create a first number of beamlets from the charged particle beam, wherein the first number is five or more, wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced. The charged particle beam device further includes an electrostatic multipole device configured to individually influence the beamlets. Further, a charged particle beam influencing device and a method of operating a charged particle beam device are described.
H01J 37/145 - Combinaisons de lentilles électrostatiques et magnétiques
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/244 - DétecteursComposants ou circuits associés
68.
Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Breuer, John
Abrégé
A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Goldenshtein, Alex
Lanio, Stefan
Abrégé
A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
G03F 1/86 - Inspection au moyen d'un faisceau de particules chargées [CPB charged particle beam]
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
70.
Simplified particle emitter and method of operating thereof
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Lanio, Stefan
Frosien, Jürgen
Abrégé
An emitter assembly for emitting a charged particle beam along an optical axis is described. The emitter assembly being housed in a gun chamber and includes an emitter having an emitter tip, wherein the emitter tip is positioned at a first plane perpendicular to the optical axis and wherein the emitter is configured to be biased to a first potential, an extractor having an opening, wherein the opening is positioned at a second plane perpendicular to the optical axis and wherein the extractor is configured to be biased to a second potential, wherein the second plane has a first distance from the first plane of 2.25 mm and above.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
The present disclosure provides an electron beam device (500) for inspecting a sample (10) with an electron beam, comprising an electron beam source comprising a cold field emitter (100) for emitting an electron beam, electron beam optics for directing and focusing the electron beam onto the sample (10), and a detector device (540) for detecting secondary charged particles generated by impingement of the electron beam on the sample (10). The cold field emitter (100) includes an emitter tip (110), a base arrangement (120) configured for supporting the emitter tip (110) and comprising a first base element (122) and a second base element (124), and a filament (130) having at least a first filament portion (132) and a second filament portion (134) attaching the emitter tip (110) to the base arrangement (120), wherein the first filament portion (132) extends between the emitter tip (110) and the first base element (122) and the second filament portion (134) extends between the emitter tip (110) and the second base element (124), wherein a length (L) of each of the first filament portion (132) and the second filament portion (134) is 4 mm or less, and wherein a diameter of a cross-section of each of the first filament portion (132) and the second filament portion (134) is 0.13 mm or less.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (α) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Lanio, Stefan
Kramer, Aleksandra
Breuer, John
Abrégé
An electron beam device for inspecting a sample with an electron beam is described. The electron beam device includes an electron beam source including a thermal field emitter, which includes an emitter tip having an emission facet configured for electron emission, wherein the emission facet has an emission facet width; and a first side facet and a second side facet, wherein an edge facet is formed between the first side facet and the second side facet, which has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width. The electron beam source further includes an extractor device; and a heating device for heating the thermal field emitter. The electron beam device further includes electron beam optics and a detector device for detecting secondary charged particles generated at an impingement or hitting of the primary electron beam on the sample.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Lanio, Stefan
Frosien, Jürgen
Firnkes, Matthias
Cook, Benjamin John
Abrégé
The present disclosure provides a system for imaging a signal charged particle beam emanating from a sample by impingement of a primary charged particle beam. The system includes a detector arrangement having a first detection element for detecting a first signal charged particle sub-beam of the signal charged particle beam originating from a first spot on the sample and a second detection element for detecting a second signal charged particle sub-beam of the signal charged particle beam originating from a second spot on the sample, wherein the first detection element and the second detection element are separated from each other, and signal charged particle optics. The signal charged particle optics includes a coil configured to generate a magnetic field having a magnetic field component parallel to a longitudinal axis of the coil, wherein the magnetic field acts on the first signal charged particle sub-beam and the second signal charged particle sub-beam propagating along the longitudinal axis, and wherein an aspect ratio of the coil is at least 1, and a controller configured to adjust the magnetic field of the coil such that the first signal charged particle sub-beam is directed towards the first detection element and the second signal charged particle sub-beam is directed towards the second detection element.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Lanio, Stefan
Firnkes, Matthias
Cook, Benjamin John
Abrégé
The present disclosure provides a charged particle beam device. The charged particle beam device includes an emitter arrangement configured to generate a primary charged particle beam having two or more primary charged particle sub-beams, a sample stage for supporting a sample, an objective lens for focusing the two or more primary charged particle sub-beams onto the sample, and a primary charged particle optics. The primary charged particle optics includes a coil provided between the emitter arrangement and the objective lens. The coil is configured to generate a magnetic field having a magnetic field component parallel to a longitudinal axis of the coil, wherein the magnetic field acts on the two or more primary charged particle sub-beams propagating along the longitudinal axis, and wherein an aspect ratio of the coil is at least 1. A controller is configured to adjust the magnetic field of the coil such that a first primary charged particle sub-beam of the two or more primary charged particle sub-beams is directed towards a first spot on the sample and a second primary charged particle sub-beam of the two or more primary charged particle sub-beams is directed towards a second spot on the sample, wherein the first spot and the second spot are spaced apart from each other.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Abrégé
An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The electrostatic multipole device comprises a substrate with at least one aperture opening for the charged particle beam, which extends along the optical axis through the substrate, and four or more electrodes which are formed on a first main surface of the substrate to influence the charged particle beam propagating through the aperture opening, wherein each of the four or more electrodes is arranged at a radial distance from a beam limiting edge of the aperture opening. Further, a method of manufacturing an electrostatic multipole device is described.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
77.
Housing device for magnetic shielding, housing arrangement for magnetic shielding, charged particle beam device, and method of manufacturing a housing device
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A housing device for providing a magnetic shielding of a charged particle beam is described. The housing device includes a housing element configured to at least partially enclose a charged particle beam propagation path and comprising a magnetic shielding material, wherein the housing element includes an inner surface directed toward the charged particle beam propagation path, an outer surface directed away from the charged particle beam propagation path and at least one edge region with an edge surface connecting the inner surface with the outer surface; and a contacting element comprising a conductive material and fixed to the at least one edge region in at least one of a form-fit connection and a bonded connection. Further, a housing arrangement including two or more electrically contacting housing devices, a charged particle beam device with a housing device, and methods of manufacturing a housing device are described.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
78.
Emitter for an electron beam, electron beam device and method for producing and operating an electron emitter
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Kleinschmidt, Harry
Abrégé
A cold field emitter for emitting an electron beam for an electron beam device is described. The emitter includes an emitter tip having a tip surface; and two or more adjacent facets formed at the tip surface and having facet boundaries, each of the facets forming a recess in the emitter tip, wherein the facets are separated. An intermediate area is provided between and around the two or more adjacent facets and the intermediate area is configured for electron emission. Further, an electron beam device, a method for operating an electron beam device and a method for producing an emitter for an electron beam device is described.
H01J 29/50 - Canons à électrons plusieurs canons étant disposés dans le même espace à vide, p. ex. pour tube à rayons multiples
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01J 37/073 - Canons à électrons utilisant des sources d'électrons à émission par effet de champ, à photo-émission ou à émission secondaire
H01J 9/02 - Fabrication des électrodes ou des systèmes d'électrodes
H01J 1/304 - Cathodes à émission d'électrons de champ
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
79.
Electrostatic multipole device, electrostatic multipole arrangement, charged particle beam device, and method of manufacturing an electrostatic multipole device
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Winkler, Dieter
Abrégé
An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes a first electrical contact, a second electrical contact, and a high-resistance layer which extends at least partially around the optical axis and is configured to allow a current flow between the first electrical contact and the second electrical contact, wherein the first electrical contact contacts the high-resistance layer at a first circumferential position and is configured to provide a first potential to the first circumferential position, and wherein the second electrical contact contacts the high-resistance layer at a second circumferential position at an angular distance from the first circumferential position and is configured to provide a second potential to the second circumferential position. Further, an electrostatic multipole arrangement including two or more such multipole devices and a charged particle beam device are described.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Cook, Benjamin John
Abrégé
A multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes: an electrostatic deflector with at least two deflector electrodes for deflecting the charged particle beam by a deflection angle, wherein the deflector electrodes extend over a first length along the optical axis; and an electrostatic corrector comprising at least four corrector electrodes to compensate for an aberration of the charged particle beam, wherein the corrector electrodes extend over a second length along the optical axis, which is shorter than the first length. A distance between a projection of the deflector electrodes on the optical axis and a projection of the corrector electrodes on the optical axis may be smaller than the first length so that, during operation of the multipole device, first fringe fields generated by the deflector electrodes and second fringe fields generated by the corrector electrodes may spatially overlap, wherein the electrostatic corrector may be configured to compensate for an aberration of the charged particle beam caused by the electrostatic deflector.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
81.
System for imaging a secondary charged particle beam with adaptive secondary charged particle optics
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lanio, Stefan
Winkler, Dieter
Abrégé
A secondary charged particle imaging system for imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The system includes a detector arrangement, and an adaptive secondary charged particle optics. The detector arrangement comprises a first detection element for detecting a first secondary charged particle sub-beam of the secondary charged particle beam, and a second detection element for detecting a second secondary charged particle sub-beam of the secondary charged particle beam. The adaptive secondary charged particle optics comprises an aperture plate including a first opening for letting the first secondary charged particle sub-beam pass through and a second opening for letting the second secondary charged particle sub-beam pass through; a lens system for mapping the secondary charged particle beam onto the aperture plate, the lens system comprising a first lens and a second lens; and a controller for controlling the excitation of the first lens and the excitation of the second lens. The controller is configured to independently control the excitation of the first lens and of the second lens to map the secondary charged particle beam onto the aperture plate so that the first secondary charged particle sub-beam passes through the first opening and the second secondary charged particle sub-beam passes through the second opening independent of a variation of at least one first operating parameter selected from a group comprising: landing energy of the primary charged particle beam on the sample, extraction field strength for the secondary charged particle beam at the sample, magnetic field strength of an objective lens that focuses the primary charged particle beam onto the sample, and working distance of the objective lens from the sample.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
The present disclosure provides a method for detecting signal charged particles in a charged particle beam device. The method includes emitting a primary charged particle beam, illuminating a specimen with the primary charged particle beam, wherein the primary charged particle beam has a landing energy on the specimen of less than 40 keV, wherein signal charged particles with a first energy spectrum are generated, energy filtering the signal charged particles such that signal charged particles in an energy range from an energy of 85% of the landing energy to 100% propagate for subsequent detection, and detecting the signal charged particles within the energy range using at least one detector.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam; and a retarding field device for retarding the primary beam before impinging on the sample, the retarding field device including a magnetic-electrostatic objective lens and a proxy electrode. The charged particle beam device is adapted for guiding the primary beam along an optical axis to the sample for generating secondary particles released from the sample and backscattered particles. The proxy electrode comprises a first opening allowing the passage of the primary beam and at least one second opening for allowing the passage of off-axial backscattered particles. Further, a proxy electrode and a method for imaging and/or inspecting a sample by a charged particle beam are described.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
The present disclosure provides a method of reducing coma and chromatic aberration in a charged particle beam device for providing a beam tilt of a charged particle beam. The method includes tilting the charged particle beam with a deflection assembly consisting of two or more electrostatic deflection elements, wherein at least one deflection element of the two or more deflection elements is a post-lens deflector, while the charged particle beam is guided through an essentially coma-free z-position of an objective lens, and reducing off-axis chromatic aberrations with a magnetic deflection element, wherein tilting the charged particle beam reduces coma independent of off-axis chromatic aberrations.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lanio, Stefan
Winkler, Dieter
Abrégé
A method of imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The method includes setting a first operating parameter to a first value. The first operating parameter is selected from a group including: landing energy of the primary charged particle beam on the sample, extraction field strength for the secondary charged particle beam at the sample, magnetic field strength of an objective lens that focuses the primary charged particle beam onto the sample, and working distance of the objective lens from the sample. The method further includes controlling, while the first operating parameter is set to the first value, the excitation of a first lens and of a second lens to map the secondary charged particle beam onto a first region on an aperture plate. The first region overlaps with a first opening of the aperture plate and with a second opening of the aperture plate. The method further includes setting the first operating parameter to a second value different from the first value. The method further includes controlling, while the first operating parameter is set to the second value, the excitation of the first lens and of the second lens to map the secondary charged particle beam onto the first region on the aperture plate.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Lanio, Stefan
Breuer, John
Frosien, Jürgen
Firnkes, Matthias
Hopster, Johannes
Abrégé
2) for deflecting the charged particle beam (102) by a fourth deflection angle (α4) in the direction of a beam exit axis (A3); a first rotation-free lens to be arranged at a first crossover (X1) of the charged particle beam between the first deflector (112) and the second deflector (114) for at least partially compensating for a dispersion introduced by at least one of the first deflector and the second deflector; and a second rotation-free lens to be arranged at a second crossover (X2) of the charged particle beam between the second deflector (114) and the third deflector (212) for at least partially compensating for a dispersion introduced by at least one of the second deflector and the third deflector.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
87.
Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam
ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
The present disclosure provides a charged particle source arrangement for a charged particle beam device. The charged particle source arrangement includes: a first vacuum region and a second vacuum region; a charged particle source in the first vacuum region, wherein the charged particle source is configured to generate a primary charged particle beam; and a membrane configured to provide a gas barrier between the first vacuum region and the second vacuum region, and wherein the membrane is configured to let at least a portion of the primary charged particle beam pass through the membrane, wherein a first vacuum generation device is connectable to the first vacuum region and a second vacuum generation device is connectable to the second vacuum region.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
A charged particle beam device is provided which includes a primary beam source device adapted for generating a primary charged particle beam, a mirror corrector device adapted for providing compensation of spherical and/or chromatic aberrations, a first beam separator adapted for transmitting the primary charged particle beam to the mirror corrector device and for separating the primary charged particle beam from a compensating primary charged particle beam reflected by the mirror corrector device, wherein the first beam separator has a magnetic deflector configured to generate at least one dipole magnetic field, an objective lens adapted for focusing the compensating primary charged particle beam onto a specimen, and a second beam separator adapted for transmitting the compensating primary charged particle beam to the specimen and for separating the compensating primary charged particle beam from a secondary charged particle beam originating from the specimen.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Breuer, John
Abrégé
2) for deflecting the charged particle beam by a second half of the deflection angle (α); and a rotation-free lens arranged between the first deflector (112) and the second deflector (114) for at least partially compensating for a dispersion introduced by at least one of the first deflector and the second deflector, wherein the lens device (160) is configured for creating a crossover (X) of the charged particle beam at the position of the rotation-free lens.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
According to an embodiment, a method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separation unit, a first optical component distanced from the beam separation unit and a second optical component distanced from the beam separation unit and distanced from the first optical component. The method includes generating a primary charged particle beam. The method further includes generating a first electric field and a first magnetic field in the beam separation unit. The method further includes guiding the primary charged particle beam through the beam separation unit in which the first electric field and the first magnetic field are generated, wherein a travel direction of the primary charged particle beam leaving the beam separation unit is aligned with a first target axis under the influence of the first electric field and the first magnetic field. The method further includes generating a secondary charged particle beam by impingement of the primary charged particle beam onto a sample. The method further includes separating the secondary charged particle beam from the primary charged particle beam in the beam separation unit, wherein the secondary charged particle beam is deflected under the influence of the first electric field and the first magnetic field to travel from the beam separation unit to the first optical component. The method further includes generating a second electric field and a second magnetic field in the beam separation unit. The method further includes guiding the primary charged particle beam through the beam separation unit in which the second electric field and the second magnetic field are generated, wherein the travel direction of the primary charged particle beam leaving the beam separation unit is aligned with the first target axis under the influence of the second electric field and the second magnetic field. The method further includes separating the secondary charged particle beam from the primary charged particle beam in the beam separation unit, wherein the secondary charged particle beam is deflected under the influence of the second electric field and the second magnetic field to travel from the beam separation unit to the second optical component.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening at which a conductive membrane is provided which is positioned between the flood gun and the specimen support table.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/145 - Combinaisons de lentilles électrostatiques et magnétiques
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
92.
Method for operating a charged particle beam device with adjustable landing energies
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbh (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
A method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separator that defines an optical axis, and includes a magnetic beam separation portion and an electrostatic beam separation portion. The method includes generating a primary charged particle beam, and applying a voltage to a sample, the voltage being set to a first value to determine a first landing energy of the primary charged particle beam. The method further includes creating an electric current in the magnetic beam separation portion, the current being set to a first value to generate a first magnetic field, and applying a voltage to the electrostatic beam separation portion, the voltage being set to a first value to generate a first electric field. The method includes guiding the primary charged particle beam to the beam separator, wherein the primary charged particle beam enters the beam separator at a first angle relative to the optical axis and, under the influence of the first magnetic field and the first electric field, leaves the beam separator at a second angle relative to the optical axis. The method includes generating a secondary charged particle beam by impingement of the primary charged particle beam on the sample to which the voltage with the first value is applied, and separating the secondary charged particle beam from the primary charged particle beam in the beam separator, wherein the secondary charged particle beam enters the beam separator at a third angle relative to the optical axis and, under the influence of the first magnetic field and the first electric field, leaves the beam separator at a fourth angle relative to the optical axis. The first angle and the fourth angle are different. The method further includes applying the voltage to the sample, the voltage being set to a second value to determine a second landing energy of the primary charged particle beam, creating the electric current in the magnetic beam separation portion, the electric current being set to a second value to generate a second magnetic field, applying the voltage to the electrostatic beam separation portion, the voltage being set to a second value to generate a second electric field, guiding the primary charged particle beam to the beam separator, wherein the primary charged particle beam enters the beam separator at the first angle relative to the optical axis and, under the influence of the second magnetic field and the second electric field, leaves the beam separator at the second angle relative to the optical axis, generating the secondary charged particle beam by impingement of the primary charged particle beam on the sample to which the voltage with the second value is applied, and separating the secondary charged particle beam from the primary charged particle beam in the beam separator, wherein the secondary charged particle beam enters the beam separator at the third angle relative to the optical axis and, under the influence of the second magnetic field and the second electric field, leaves the beam separator at the fourth angle relative to the optical axis.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
93.
Charged particle beam device with dynamic focus and method of operating thereof
ICT Integrated Circuit Testing Gesellschaft fur Halbleiterpruftechnik GmbH (Allemagne)
Inventeur(s)
Winkler, Dieter
Petrov, Igor
Abrégé
A retarding field scanning electron microscope for imaging a specimen is described. The microscope includes a scanning deflection assembly configured for scanning an electron beam over the specimen, one or more controllers in communication with the scanning deflection assembly for controlling a scanning pattern of the electron beam, and a combined magnetic-electrostatic objection lens configured for focusing the electron beam, wherein the objective lens includes a magnetic lens portion and an electrostatic lens portion. The electrostatic lens portion includes an first electrode configured to be biased to a high potential, and a second electrode disposed between the first electrode and the specimen plane, the second electrode being configured to be biased to a potential lower than the first electrode, wherein the second electrode is configured for providing a retarding field of the retarding field scanning electron microscope. The retarding field scanning electron microscope further includes a voltage supply being connected to the second electrode for biasing the second electrode to a potential and being in communication with the one or more controllers, wherein the one or more controllers synchronize a variation of the potential of the second electrode with the scanning pattern of the electron beam.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Winkler, Dieter
Cook, Benjamin John
Abrégé
A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.
ICT Integrated Circuit Testing Gesellschaft fur Halbleiterpruftechnik mbH (Allemagne)
Inventeur(s)
Firnkes, Matthias
Lanio, Stefan
Schönecker, Gerald
Winkler, Dieter
Abrégé
A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the first aperture opening has a concave shaped portion, particularly wherein the first aperture opening has a pincushion shape.
ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Cook, Benjamin John
Abrégé
A charged particle beam device is described. The charged particle beam device includes a charged particle beam source (12) for emitting a charged particle beam, and a switchable multi-aperture (26) for generating two or more beam bundles (21a, 21b) from the charged particle beam, wherein the switchable multi-aperture includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement (226) configured for individually blanking the two or more beam bundles; and a stopping aperture (227) for blocking beam bundles, which are blanked off by the beam blanker arrangement. The device further includes a control unit electrically connected to the beam blanker arrangement and configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens (18) configured for focusing the two or more beam bundles on a specimen (19) or wafer, wherein the two or more beam bundles are tilted with respect to the specimen or wafer depending on the position of each of the two or more beam bundles relative to an optical axis defined by the objective lens, and wherein the objective lens is configured for focusing the charged particle beam source, a virtual source provided by the charged particle beam source or a crossover.
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Cook, Benjamin John
Abrégé
A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.
H01J 37/073 - Canons à électrons utilisant des sources d'électrons à émission par effet de champ, à photo-émission ou à émission secondaire
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/063 - Disposition géométrique des électrodes pour la formation du faisceau
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
99.
High brightness electron gun, system using the same, and method of operating thereof
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Adamec, Pavel
Abrégé
A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.
H01J 37/073 - Canons à électrons utilisant des sources d'électrons à émission par effet de champ, à photo-émission ou à émission secondaire
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
H01J 1/304 - Cathodes à émission d'électrons de champ
H01J 37/063 - Disposition géométrique des électrodes pour la formation du faisceau
100.
Electron beam wafer inspection system and method of operation thereof
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH (Allemagne)
Inventeur(s)
Frosien, Jürgen
Abrégé
An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.