Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.
H03B 9/14 - Production d'oscillations par utilisation des effets du temps de transit utilisant des dispositifs à l'état solide, p. ex. dispositifs à effet Gunn et des éléments comprenant des inductances et des capacités réparties
H03B 7/14 - Production d'oscillations au moyen d'un élément actif ayant une résistance négative entre deux de ses électrodes avec un élément déterminant la fréquence comportant des inductances et des capacités réparties l'élément actif étant un dispositif à semi-conducteurs
H03B 5/18 - Élément déterminant la fréquence comportant inductance et capacité réparties
H03B 7/06 - Production d'oscillations au moyen d'un élément actif ayant une résistance négative entre deux de ses électrodes avec un élément déterminant la fréquence comportant des inductances et des capacités localisées l'élément actif étant un dispositif à semi-conducteurs
G01N 22/00 - Recherche ou analyse des matériaux par l'utilisation de micro-ondes ou d'ondes radio, c.-à-d. d'ondes électromagnétiques d'une longueur d'onde d'un millimètre ou plus
H03B 9/12 - Production d'oscillations par utilisation des effets du temps de transit utilisant des dispositifs à l'état solide, p. ex. dispositifs à effet Gunn
A microfabricated RF filter uses a resonant cavity weakly coupled to a transmission line, to attenuate noise sources emitting interference into the RF radiation at the resonant frequency. Radiation at the resonant frequency is leaked into the resonant cavity and build up there, until it is dumped to ground by a switch.
A microfabricated spectrometer uses at least one filter to discriminate the frequency components of an incoming RF signal. The filter center frequencies are chosen to correspond to wavelengths of target species which may be present in the gas, and radiating at a characteristic frequency.
G01N 22/00 - Recherche ou analyse des matériaux par l'utilisation de micro-ondes ou d'ondes radio, c.-à-d. d'ondes électromagnétiques d'une longueur d'onde d'un millimètre ou plus
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.
H01L 21/447 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes impliquant l'application d'une pression, p. ex. soudage par thermo-compression
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
H01L 21/603 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement impliquant l'application d'une pression, p. ex. soudage par thermo-compression
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.
A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
7.
WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER
Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.
A method for forming through substrate vias (TSVs) in a non-conducting, glass substrate is disclosed. The method involves patterning a silicon template substrate with a plurality of lands and spaces, bonding a slab or wafer of glass to the template substrate, and melting the glass so that it flows into the spaces formed in the template substrate. The template substrate may then be removed to leave a plurality of TSVs in the glass slab or wafer.
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
9.
MICROFABRICATED MAGNETIC FIELD TRANSDUCER WITH FLUX GUIDE
A microfabricated magnetic field transducer uses a magnetically sensitive structure in combination with one or more permeable magnetic flux guides. The flux guides may route off-axis components of an externally applied magnetic field across the sensitive axis of the magnetically sensitive structure, or may shield the magnetically sensitive structure from off-axis, stray fields or noise sources. A combination of flux guides and magnetically sensitive structures arranged on a single substrate may enable an integrated, 3-axis magnetometer in a single package, greatly improving cost and performance.
C21D 1/04 - Procédés ou dispositifs généraux pour le traitement thermique, p. ex. recuit, durcissement, trempe ou revenu avec application simultanée d'ondes supersoniques, de champs magnétiques ou électriques
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
A disposable cartridge is described which is compatible with a MEMS particle sorting device. The disposable cartridge may include passageways which connect fluid reservoirs in the cartridge with corresponding microfluidic passageways on the MEMS chip. A flexible gasket may prevent leakages and allow the fluid to cross the gasket barrier through a plurality of holes in the gasket. Vents and septums may also be included to allow air to escape and fluids to be inserted by hypodermic needle. A MEMS-based particle sorting system using the disposable cartridge is also described.
A MEMS-based system and a method are described for separating a target particle from the remainder of a fluid stream. The system makes use of a unique, microfabricated movable structure formed on a substrate, which moves in a rotary fashion about one or more fixed points, which are all located on one side of the axis of motion. The movable structure is actuated by a separate force-generating apparatus, which is entirely separate from the movable structure formed on its substrate. This allows the movable structure to be entirely submerged in the sample fluid.
A micromechanical pumping system is formed on a substrate surface. The pumping system uses a pumping element which pumps a fluid through valves which move in a plane substantially parallel to the substrate surface. An electromagnetic actuating mechanism may also be fabricated on the surface of the substrate. Magnetic flux produced by a coil around a permeable core may be coupled to a permeable member affixed to a pumping element. The permeable member and pumping element may be configured to move in a plane parallel to the substrate. The electromagnetic actuating mechanism gives the pumping system a large throw and substantial force, such that the fluid pumped by the pumping system may be pumped through a transdermal cannula to deliver a therapeutic substance to the tissue underlying the skin of a patient.
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p. ex. systèmes micro-électromécaniques [SMEM, MEMS]
13.
REMOVABLE/DISPOSABLE APPARATUS FOR MEMS PARTICLE SORTING DEVICE
A micromechanical particle sorting system uses a removable/disposable apparatus which may include a compressible device, a filter apparatus and a cell sorter chip assembly. The chip assembly may include a tubing strain relief manifold and a microfabricated cell sorting chip. The chip assembly may be detachable from the filter apparatus in order to mount the MEMS particle sorting chip adjacent to a force- generating apparatus which resides with the particle sorting system. A disturbance device installed in the particle sorting system may interact with a transducer on the removable/disposable apparatus to reduce clogging of the flow through the system. Using this removable/disposable apparatus, when the sample is changed, the entire apparatus can be thrown away with minimal expense and system down time.
Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have a flexible shunt bar which has one end coupled to the deformable plate, and the other end coupled to a contact on the second substrate. Upon activating the switch, the deformable plate urges the shunt bar against a second contact formed in the second substrate, thereby closing the switch. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.
A method for activating a getter at low temperature for encapsulation in a device cavity containing a microdevice comprises etching a passivation layer off the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma etching process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then etches the passivation layer from the getter material, which is directly thereafter sealed within the device cavity of the microdevice, all within the etching/bonding chamber.
Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.
A system and a method are described for forming features at the bottom of a cavity in a substrate. Embodiments of the systems and methods provide an infrared transmitting, hermetic lid for a microdevice. The lid may be manufactured by first forming small, subwavelength features on a surface of an infrared transmitting substrate, and coating the subwavelength features with an etch stop material. A spacer wafer is then bonded to the infrared transmitting substrate, and a device cavity is etched into the spacer wafer down to the etch stop material, exposing the subwavelength features. The etch stop material may then be removed, and the microdevice enclosed in the device cavity, by bonding the device wafer to the lid.
A MEMS switch device is made using a gold alloy as the switch contact material. The increased mechanical hardness of the alloy compared to the pure gold prevents the contacts of the switch from welding together. A scrubbing action which occurs when the switch closes may allow the contact surfaces to come to rest where their surfaces are complementary, thus resulting in higher contact area and low contact resistance, despite the higher sheet resistance of the gold alloy material relative to the pure gold material.
A material for forming a conductive structure for a micromechanical current- driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
20.
CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE
A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjecent grains and is recessed by at least about 0.05 &mgr;m from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
21.
INTERCONNECT STRUCTURE USING THROUGH WAFER VIAS AND METHOD OF FABRICATION
A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
A method for forming through wafer vias in a substrate uses a Cr/Au seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, a reverse plating process uses a forward current to plate the bottom and sides of the blind hole, and a reverse current to de-plate material in or near the top. Using the reverse pulse plating technique, the plating proceeds generally from the bottom of the blind hole to the top. To form the through wafer vias, the back side of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.
brevets
