Abrégé

A non-volatile memory device comprises at least one non-volatile memory cell, electrically connected to at least one bit line, a first select line, a second select line, a control line and a common line. Each non-volatile memory cell comprises a first select transistor, having a drain electrically connected to a bit line, and a gate electrically connected to the first select line; a second select transistor, having a source electrically connected to the common line, and a gate electrically connected to the second select line; and a transistor with a floating gate, having a drain electrically connected to a source of the first select transistor, a gate electrically connected to the control line, and a source electrically connected to a drain of the second select transistor; wherein when performing erase or write operation, the second select line is grounded, causing the second select transistor to turn off.

Classes IPC  ?

• G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p. ex. FAMOS
• G11C 16/10 - Circuits de programmation ou d'entrée de données
• G11C 16/16 - Circuits pour effacer électriquement, p. ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p. ex. des réseaux, des mots, des groupes

Abrégé

A non-volatile memory cell includes a tunneling part; a coupling transistor, including a coupling gate part, a first conductive region and a second conductive region, wherein the coupling gate part is coupled to the tunneling part and disposed in the first conductive region; a read transistor with a read gate part coupled to the tunneling part for forming an electron tunneling ejection path in an erase mode, and forming an electron tunneling injection path in a program mode; and a select transistor, connected in series with the read transistor, for forming a read path with the read transistor in a read mode.

Classes IPC  ?

• H10B 41/70 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes la grille flottante étant une électrode partagée par plusieurs éléments
• H10B 41/10 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la configuration vue du dessus
• H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p. ex. NON-ET

Abrégé

A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a program tunneling structure forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.

Classes IPC  ?

• H01L 27/115 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs
• G11C 16/14 - Circuits pour effacer électriquement, p. ex. circuits de commutation de la tension d'effacement
• H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
• G11C 16/02 - Mémoires mortes programmables effaçables programmables électriquement

Abrégé

A method for erasing data stored in the memory cells of the floating gate flash memory is included. The method allows a plurality of sectors to be disposed in a same P well. The method includes erasing data stored in a first set of memory cells according to a control signal, randomly reading the data stored in a second set of memory cells affected by the erasing action of the first set of memory cells, and writing data read from the second set of memory cells onto the second set of memory cells.

Classes IPC  ?

• G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs