Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
3.
Methods and systems for utilizing design data in combination with inspection data
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01J 4/00 - Mesure de la polarisation de la lumière
5.
Optical imaging system with catoptric objective; broadband objective with mirror; and refractive lenses and broadband optical imaging system having two or more imaging paths
An optical system may include an objective having at least four mirrors including an outermost mirror with aspect ratio <20:1 and focusing optics including a refractive optical element. The objective provides imaging at numerical aperture >0.7, central obscuration <35% in pupil. An objective may have two or more mirrors, one with a refractive module that seals off an outermost mirror's central opening. A broad band imaging system may include one objective and two or more imaging paths that provide imaging at numerical aperture >0.7 and field of view >0.8 mm. An optical imaging system may comprise an objective and two or more imaging paths. The imaging paths may provide two or more simultaneous broadband images of a sample in two or more modes. The modes may have different illumination and/or collection pupil apertures or different pixel sizes at the sample.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
7.
Enclosure for controlling the environment of optical crystals
An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on the crystals in the presence of varying temperatures. Efficient conversion may include multiple crystals of the same or different materials. Multiple frequency conversion steps may also be employed within a single enclosure. Materials that have been processed specifically to provide increased lifetimes, stability, and damage thresholds over designs previously available are employed. The enclosure allows pre-exposure processing of the crystal(s) such as baking at high temperatures and allowing real time measurement of crystal properties.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
8.
Methods and systems for providing illumination of a specimen for inspection
Methods and systems for providing illumination of a specimen for inspection are provided. One embodiment relates to a system configured to provide illumination of a specimen for inspection. The system includes an electrodeless lamp configured to generate light. The system is further configured such that the light illuminates the specimen during the inspection. Another embodiment relates to a system configured to inspect a specimen. The system includes an electrodeless lamp configured to generate light and one or more optical elements configured to direct the light to the specimen. The system also includes a detection subsystem configured to generate output responsive to light from the specimen. The output can be used to detect defects on the specimen. An additional embodiment relates to a method for providing illumination of a specimen for inspection. The method includes illuminating the specimen during the inspection with light generated by an electrodeless lamp.
H01J 65/00 - Lampes sans électrode à l'intérieur de l'enceinteLampes comportant au moins une électrode principale à l'extérieur de l'enceinte
9.
Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe
Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe are provided. One method includes separating defects into bins based on regions in which the defects are located, defect types, and values of the defects for parameter(s) of a detection algorithm. The method also includes determining a number of the defects to be selected from each bin by distributing a user-specified target number of defects across the bins. In addition, the method includes selecting defects from the bins based on the determined numbers thereby creating a defect sample for use in selecting values of parameter(s) of the detection algorithm for use in the inspection recipe.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
10.
Methods and systems for utilizing design data in combination with inspection data
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
11.
Computer-implemented methods, carrier media, and systems for determining sizes of defects detected on a wafer
Computer-implemented methods, carrier media, and systems for determining sizes of defects detected on a wafer are provided. One computer-implemented method includes separating the defects into groups based on output acquired for the defects by multiple channels of an inspection system used to detect the defects on the wafer. The method also includes separating the defects in one or more of the groups into subgroups based on the output acquired for the defects by one or more of the multiple channels. In addition, the method includes determining the sizes of one or more of the defects in one or more of the subgroups separately based on the output acquired for the defects by only one of the multiple channels and a calibration parameter. The calibration parameter is different for each of the subgroups and is acquired by using another system to measure actual sizes of defects detected on other wafers.
G01B 5/28 - Dispositions pour la mesure caractérisées par l'utilisation de techniques mécaniques pour mesurer la rugosité ou l'irrégularité des surfaces
12.
Site based quantification of substrate topography and its relation to lithography defocus and overlay
A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
Methods for accurate identification of an edge of a care area for an array area formed on a wafer and methods for binning defects detected in an array area formed on a wafer
Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.
Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer at different values of one or more parameters of one or more fabrication processes that will be used to form a metrology target structure on the wafer based on the one or more fabrication processes, one or more parameters of the wafer, and one or more initial metrology target structure designs. The method also includes simulating one or more spectra that will be produced by a predetermined metrology system configuration for each of the simulated one or more initial metrology target structures. In addition, the method includes creating the metrology target structure design based on the one or more spectra.
G02B 23/10 - Télescopes ou lunettes d'approche, p. ex. jumellesPériscopesInstruments pour voir à l'intérieur de corps creuxViseursPointage optique ou appareils de visée comprenant des prismes ou des miroirs projetant dans le champ de vision des indications supplémentaires, p. ex. données par des collimateurs
Methods for forming device structures on a wafer are provided. One method includes transferring approximately an inverse of patterned features formed in a positive resist layer on the wafer to a device material on the wafer to form the device structures in the device material. Another method includes transferring approximately an inverse of patterned features formed in a sacrificial layer on the wafer to a device material on the wafer to form the device structures in the device material.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/26 - Traitement des matériaux photosensiblesAppareillages à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
16.
Fourier filters, inspection systems, and systems for fabricating fourier filters
Fourier filters, inspection systems, and systems for fabricating Fourier filters are provided. One Fourier filter configured for use in an inspection system includes a substrate that is substantially transparent to light from a specimen illuminated by the inspection system. The Fourier filter also includes an array of patterned features formed on the substrate. The patterned features are formed of one or more pigments on the substrate. The patterned features are configured to block light reflected and diffracted from structures on the specimen and to allow light scattered from defects on the specimen to pass through the substrate.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
17.
Apparatus and method for e-beam dark imaging with perspective control
A method of imaging using an electron beam. An incident electron beam is focused onto the specimen surface, a scattered electron beam is extracted from the specimen surface, and a plurality of dark field signals are detected using a detection system. An interpolated dark field signal is generated using the plurality of dark field signals. In addition, a bright field signal may be detected using the detection system, and a final interpolated signal may be generated using the interpolated dark field signal and the bright field signal. User input may be received which determines a degree of interpolation between two adjacent dark field signals so as to generate the interpolated dark field signal and which determines an amount of interpolation between the interpolated dark field signal and the bright field signal so as to generate a final interpolated signal. Other embodiments, aspects and features are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
18.
Method for optimizing the configuration of a scatterometry measurement system
The present application discloses a method of model-based measurement of semiconductor device features using a scatterometer system. The method includes at least the following steps. A cost function is defined depending upon a plurality of variable parameters of the scatterometer system and upon a plurality of variable parameters for computer-implemented modeling to determine measurement results. Constraints are established for the plurality of variable parameters of the scatterometer system and for the plurality of variable parameters for the computer-implemented modeling. A computer-implemented optimization procedure is performed to determine an optimized global set of parameters, including both the variable parameters of the scatterometer system and the variable parameters for the computer-implemented modeling, which result in a minimal value of the cost function. Finally, the optimized global set of parameters is applied to configure the scatterometer system and the computer-implemented modeling. Other embodiments, features and aspects are also disclosed herein.
G01B 11/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
19.
Lamp with shaped wall thickness, method of making same and optical apparatus
A lamp, a method of making a bulb for a lamp and an optical apparatus are disclosed. The lamp may include an anode and cathode disposed within a bulb. The bulb may include an optically refractive wall that is rotationally symmetric about an axis. A thickness of the wall may decrease with increase in azimuthal angle between an equatorial plane of the bulb and a point on the bulb's surface. The apparatus may include the lamp and an ellipsoidal reflecting surface. An alternative apparatus may include an ellipsoidal reflecting surface and a lamp having an anode and cathode within a bulb. A gap between the anode and cathode may be proximate a focus of the reflecting surface. The bulb may include an optically refractive wall configured such that a 0.24/0.13 NA power ratio for bulb light coupled to the interior ellipsoidal reflecting surface is between about 3.0 and about 3.3.
A pulse stretcher includes a plurality of substantially parallel slab-like optical paths of different optical path lengths and a plurality of reflecting surfaces, which are totally internally reflecting surface formed, located at an end of the corresponding optical path. Due to the different path lengths, the pulse stretcher can spread out an input pulse into a stretched pulse having a longer pulse duration and proportionally lower intensity than the initial pulse.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
21.
Bright-field/dark-field detector with integrated electron energy spectrometer
One embodiment relates to an electron beam apparatus including an electron beam column, an immersion objective lens, a Wien filter, a bright-field/dark-field detector, and an electron energy spectrometer. The bright-field/dark-field detector comprising an opening configured to pass through bright field secondary electrons and one or more detector segments around the opening configured to detect dark field secondary electrons. The electron energy spectrometer configured to detect the bright field secondary electrons passed through the opening and to measure an energy spectrum of the bright field secondary electrons. Other embodiments, aspects and features are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
22.
Model-based measurement of semiconductor device features with feed forward use of data for dimensionality reduction
The present application discloses a new technique which reduces the dimensionality of a feature model by re-use of data that has been obtained by a prior measurement. The data re-used from the prior measurement may range from parameters, such as geometrical dimensions, to more complex data that describe the electromagnetic scattering function of an underlying layer (for example, a local solution of the electric field properties).
G01R 27/28 - Mesure de l'atténuation, du gain, du déphasage ou des caractéristiques qui en dérivent dans des réseaux électriques quadripoles, c.-à-d. des réseaux à double entréeMesure d'une réponse transitoire
23.
Methods and systems for providing illumination of a specimen for a process performed on the specimen
Methods and systems for providing illumination of a specimen for a process performed on the specimen are provided. One system configured to provide illumination of a specimen for a process performed on the specimen includes a laser configured to generate excitation light. The system also includes focusing optics configured to focus the excitation light to a plasma in an electrodeless lamp such that the plasma generates light. The system is also configured such that the light illuminates the specimen during the process.
G03C 5/00 - Procédés photographiques ou agents à cet effetRégénération de tels agents de traitement
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
25.
Cross hatched metrology marks and associated method of use
The present invention is directed to novel metrology marks and methods for their use. The marks comprise cross hashed overlay metrology marks formed on a substrate including a plurality of target regions. The mark including a first grating structure formed in one layer of a target region and including a second grating structure formed in another layer of the target region. The periodic features of the first and second grating structures are oriented substantially orthogonal one another to form a cross-hatched metrology target in the target region. Additionally, the patent discloses methods of employing the metrology marks to obtain overlay metrology measurements.
Methods and systems for inspection of a wafer or setting up an inspection process are provided. One method for inspection of a wafer includes detecting first and second sets of defects on the wafer by performing different scans of the wafer with different focus offsets. The method also includes comparing results of the different scans for a defect of the first set and a defect of the second set that are detected at approximately the same location on the wafer. The method further includes determining if the defect of the first and second sets is a defect of an underlying layer or an uppermost layer formed on the wafer based on results of the comparing step.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
27.
System and method for illuminating a specimen with uniform angular and spatial distribution
A system for illuminating a specimen are disclosed herein. In general, the system may include an illumination source configured to generate light with an uneven distribution at a pupil plane and field stop of the system, a lightpipe coupled for redistributing the light across the pupil plane and field stop, and at least one optical element configured to direct the redistributed light onto a specimen. The lightpipe may generally include a cone-shaped portion and a rectangular-shaped portion. The cone-shaped portion is configured for modifying an angular distribution of the generated light, so that the redistributed light is uniformly distributed across the pupil plane of the system. The rectangular-shaped portion is formed contiguous with the cone-shaped portion and configured for modifying a spatial distribution of the generated light, so that the redistributed light is uniformly distributed across a field stop of the system. A method for illuminating a specimen and a system for inspecting a specimen are also disclosed herein.
Broadband radiation may be generated by supplying a gas mixture containing hydrogen and/or deuterium and/or helium and/or neon to an enclosure, generating a plasma inside the enclosure with the gas mixture. Broadband radiation generated as a result of the plasma discharge to a substrate may be optically coupled to a substrate located outside the enclosure.
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
A surface and edge inspection system and the method for inspecting a substrate are disclosed. An edge inspection tool performs edge inspection of one or more substrates while a surface inspection tool performs surface inspection of a different substrate. A recipe for the surface inspection may be modified based on the results of the edge inspection.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
31.
Charged particle microscopy using super resolution
A method for improving throughput in review of images from a charged particle beam microscopy tool and a charged particle beam microscopy tool are disclosed.
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
32.
Methods and systems for generating an inspection process for an inspection system
Methods and systems for generating an inspection process for an inspection system are provided. One computer implemented method includes generating inspection data for a selected defect on a specimen at different values of one or more image acquisition parameters of the inspection system. The method also includes determining which of the different values produces the best inspection data for the selected defect. In addition, the method includes selecting the different values determined to produce the best inspection data as values of the one or more image acquisition parameters to be used for the inspection process.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
Systems configured to inspect a specimen are provided. One system includes an illumination subsystem configured to illuminate a two-dimensional field of view on the specimen. The system also includes a collection subsystem configured to collect light scattered from the specimen. In addition, the system includes an array of micro-mirrors configured to reflect a two-dimensional pattern of light diffracted from periodic structures on the specimen out of the optical path of the system without reflecting light across an entire dimension of the array out of the optical path. The system further includes a detection subsystem configured to generate output responsive to light reflected by the array into the optical path. The output can be used to detect defects on the specimen. In one embodiment, the system includes an optical element configured to increase the uniformity of the wavefront of the light reflected by the array into the optical path.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
34.
DYNAMIC PATTERN GENERATOR WITH CUP-SHAPED STRUCTURE
One embodiment relates to a dynamic pattern generator (112) for reflection electron beam lithography which includes conductive pixel pads (902), an insulative border (906) surrounding each conductive pixel pad so as to electrically isolate the conductive pixel pads from each other, and conductive elements (908) coupled to the conductive pixel pads for controllably applying voltages to the conductive pixel pads. The conductive pixel pads are advantageously cup shaped with a bottom portion, a sidewall portion, and an open cavity (904). Another embodiment relates to a pattern generating apparatus which includes a well structure with sidewalls and a cavity configured above each conductive pixel pad (1210). The sidewalls may include alternating layers of conductive (1212, 1214, 1216) and insulative (1202, 1204, 1206) materials. Other embodiments, aspects and feature are also disclosed.
One embodiment relates to a dynamic pattern generator for reflection electron beam lithography which includes conductive pixel pads, an insulative border surrounding each conductive pixel pad so as to electrically isolate the conductive pixel pads from each other, and conductive elements coupled to the conductive pixel pads for controllably applying voltages to the conductive pixel pads. The conductive pixel pads are advantageously cup shaped with a bottom portion, a sidewall portion, and an open cavity. Another embodiment relates to a pattern generating apparatus which includes a well structure with sidewalls and a cavity configured above each conductive pixel pad. The sidewalls may include alternating layers of conductive and insulative materials. Other embodiments, aspects and feature are also disclosed.
G21K 1/02 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p. ex. pour focaliser ou pour modérer utilisant des diaphragmes, des collimateurs
36.
Temperature stabilization for substrate processing
A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.
One embodiment relates to a method of behind-the-lens dark-field imaging using a scanning electron microscope apparatus. An incident beam is focused onto a specimen surface using an immersion objective lens, and the incident beam is deflected so as to scan the incident electron beam over a field of view of the specimen surface. A secondary electron beam is detected using a segmented detector to obtain a set of pixel data for each segment of the detector. Scan-dependent movement of the secondary electron beam over the segmented detector is compensated for by processing using a dynamic centering algorithm to generate a set of virtual pixel data for each segment of a virtual detector. At least one set of the virtual pixel data is used to generate a dark field image. Other embodiments, aspects, and features are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
38.
Surface inspection system using laser line illumination with two dimensional imaging
A surface inspection apparatus and a method are provided which include an illumination system configured to focus a beam of radiation at a non-orthogonal incidence angle to form an illumination line on a surface substantially in a plane of incidence of the focused beam. The apparatus and method further include a collection system configured to image the illumination line onto an array of detectors oriented parallel to the illumination line. The collection system includes an imaging lens for collecting light scattered from the illumination line, a focusing lens for focusing the collected light, and the array of detectors, each configured to detect a corresponding portion of the illumination line. The collection system may be configured to image the illumination line such that the width of the imaged illumination line on the array of detectors is larger than the pixel size of the detectors along the same direction.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
39.
Electrical process monitoring using mirror-mode electron microscopy
One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.
A method and system for semiconductor wafer inspection is disclosed. Each of a plurality of dies on a wafer may be probed with a probe tool to produce probe data. The probe data may be used to generate one or more non-repeating care areas. An inspection tool may use the non-repeating care areas to perform an inspection of the semiconductor wafer.
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
G06F 11/00 - Détection d'erreursCorrection d'erreursContrôle de fonctionnement
G01B 21/30 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la rugosité ou l'irrégularité des surfaces
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
41.
Systems and method for simultaneously inspecting a specimen with two distinct channels
A system is provided herein for inspecting a specimen. In one embodiment, the system may include a dual-channel microscope, two illuminators, each coupled for illuminating a different channel of the dual-channel microscope and two detectors, each coupled to a different channel of the dual-channel microscope for acquiring images of the specimen. Means are provided for separating the channels of the dual-channel microscope, so that the two detectors can acquire the images of the specimen at substantially the same time. In one embodiment, the channels of the dual-channel microscope may be spectrally separated by configuring the two illuminators, so that they produce light in two substantially non-overlapping spectral ranges. In another embodiment, the channels of the dual-channel microscope may be spatially separated by positioning the two detectors, so that the illumination light do not overlap and the fields of view of the two detectors do not overlap within a field of view of an objective lens included within the system.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
42.
Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values. In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition.
G06F 15/18 - dans lesquels un programme est modifié en fonction de l'expérience acquise par le calculateur lui-même au cours d'un cycle complet; Machines capables de s'instruire (systèmes de commande adaptatifs G05B 13/00;intelligence artificielle G06N)
G06E 1/00 - Dispositions pour traiter exclusivement des données numériques
G06E 3/00 - Dispositifs non prévus dans le groupe , p. ex. pour traiter des données analogiques hybrides
G06G 7/00 - Dispositifs dans lesquels l'opération de calcul est effectuée en faisant varier des grandeurs électriques ou magnétiques
J) from across the process window in addition to, or in lieu of, a best focus and a best exposure for the stepper. The reticle design is adjusted in a way that reduces the deviation as measured by the error function, thereby producing an adjusted reticle design.
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
G06F 17/17 - Évaluation de fonctions par des procédés d'approximation, p. ex. par interpolation ou extrapolation, par lissage ou par le procédé des moindres carrés
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
Various computer-implemented methods, carrier media, and systems for generating a metrology sampling plan are provided. One computer-implemented method for generating a metrology sampling plan includes identifying one or more individual defects that have one or more attributes that are abnormal from one or more attributes of a population of defects in which the individual defects are included. The population of defects is located in a predetermined pattern on a wafer. The method also includes generating the metrology sampling plan based on results of the identifying step such that one or more areas on the wafer in which the one or more identified individual defects are located are sampled during metrology.
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate an area on the wafer by directing light to the wafer at an oblique angle of incidence. The system also includes a collection subsystem configured to simultaneously collect light scattered from different spots within the illuminated area and to focus the light collected from the different spots to corresponding positions in an image plane. In addition, the system includes a detection subsystem configured to separately detect the light focused to the corresponding positions in the image plane and to separately generate output responsive to the light focused to the corresponding positions in the image plane. The output can be used to detect defects on the wafer.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
46.
Charge-control method and apparatus for electron beam imaging
One embodiment relates to a method of electron beam imaging of a target area of a substrate. During an imaging phase, an electron beam is controllably scanned over the target area of the substrate, and extracted secondary electrons are detected. An electric field at a surface of the substrate is changed from an original electric field after the imaging phase. During a charge control phase, the electron beam is controllably scanned over the target area of the substrate. The electric field at the surface of the substrate is reverted back to the original electric field after the charge control phase. The imaging and charge control frames are interleaved. Other embodiments and features are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
47.
Semiconductor device property extraction, generation, visualization, and monitoring methods
Various methods, carrier media, and systems for monitoring a characteristic of a specimen are provided. One computer-implemented method for monitoring a characteristic of a specimen includes determining a property of individual pixels on the specimen using output generated by inspecting the specimen with an inspection system. The method also includes determining a characteristic of individual regions on the specimen using the properties of the individual pixels in the individual regions. The method further includes monitoring the characteristic of the specimen based on the characteristics of the individual regions.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
48.
Systems and methods for inspecting a wafer with increased sensitivity
Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
49.
EXTERNAL BEAM DELIVERY SYSTEM FOR LASER DARK-FIELD ILLUMINATION IN A CATADIOPTRIC OPTICAL SYSTEM
A catadioptric objective configured to inspect a specimen is provided. The catadioptric objective includes a Mangin element having one surface at a first axial location and an extension element positioned together with the Mangin element. The extension element provides a second surface at a second axial location. Certain light energy reflected from the specimen passes to the second surface of the extension element, the Mangin element, and through a plurality of lenses. An aspheric surface may be provided, and light energy may be provided to the specimen using diverting elements such as prisms or reflective surfaces.
G02B 13/18 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous avec des lentilles ayant une ou plusieurs surfaces non sphériques, p. ex. pour réduire l'aberration géométrique
50.
Accelerating electrostatic lens gun for high-speed electron beam inspection
One embodiment relates to an electron beam apparatus for inspecting or reviewing a manufactured substrate. The apparatus includes a cathode, an extraction electrode, a lens electrode, an anode, deflectors, electron lenses, and a detector. The extraction voltage is positive relative to the cathode voltage, such that electrons are emitted from the cathode. Advantageously, the lens voltage is positive relative to the extraction voltage, such that electrons are accelerated from the extraction electrode to the lens electrode while the electrons are condensed to form an electron beam. The electron beam is transmitted through an opening of the anode and is controllably deflected to scan it over an area of the surface. The detector detects secondary electrons from the substrate so as to form an image of the scanned area. Other embodiments and features are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
G21K 7/00 - Microscopes à rayons gamma ou à rayons X
Systems and methods for inspecting a specimen with light at varying power levels are provided. One system configured to inspect a specimen includes a light source configured to generate light. The system also includes a power attenuator subsystem configured to alter a power level of the light directed to the specimen during inspection between at least two power levels including a full power level and a minimum power level equal to or greater than about 10% of the full power level. In addition, the system includes a detection subsystem configured to generate output responsive to the light scattered from the specimen. The output can be used to detect defects on the specimen.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
52.
Computer-implemented methods, carrier media, and systems for detecting defects on a wafer based on multi-core architecture
Computer-implemented methods, carrier media, and systems for detecting defects on a wafer based on multi-core architecture are provided. One computer-implemented method for detecting defects on a wafer includes acquiring output for the wafer generated by an inspection system. Dies are formed on the wafer, and multiple cores are formed in the dies. The method also includes detecting defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores. The first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
53.
Systems and methods for determining a characteristic of a specimen
Systems and methods for determining a characteristic of a specimen are provided. One system includes an illumination subsystem configured to direct light to a first set of spots on the specimen at a normal angle of incidence and to simultaneously direct light to a second set of spots on the specimen at an oblique angle of incidence. The system also includes a detection subsystem configured to detect light scattered from the first and second sets of spots simultaneously and to generate first output responsive to the light scattered from the first set of spots and second output responsive to the light scattered from the second set of spots. The first and second outputs can be used to determine the characteristic of the specimen.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
54.
Inspection systems and methods for extending the detection range of an inspection system by forcing the photodetector into the non-linear range
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
One embodiment relates to a method for detecting defects in circuitry formed on a semiconductor substrate. A first scan of said circuitry is performed by scanning a primary electron beam in a first scan direction relative to said circuitry, and secondary electrons emitted during the first scan are detected so as to form a first voltage-contrast image. A second scan of said circuitry is performed by scanning the primary electron beam in a second scan direction relative to said circuitry, and secondary electrons emitted during the second scan are detected so as to form a second voltage-contrast image. The second scan direction is non-parallel to the first scan direction. The first and second voltage-contrast images are then compared to detect electrically-active defects. Other embodiments, aspects and features are also disclosed.
One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.
Substrate processing method and apparatus are disclosed. The substrate processing apparatus includes a non-contact air bearing chuck with a vacuum preload.
B25B 11/00 - Porte-pièces ou dispositifs de mise en position non couverts par l'un des groupes , p. ex. porte-pièces magnétiques, porte-pièces utilisant le vide
58.
Inspection methods and systems for lithographic masks
Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
59.
Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods
Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods are provided. One method for identifying array areas in dies formed on a wafer includes comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer. The method also includes determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparing step. In addition, the method includes identifying the array areas in the dies formed on the wafer based on results of the determining step.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
One embodiment relates to a method of automated microalignment using off-axis beam tilting. Image data is collected from a region of interest on a substrate at multiple beam tilts. Potential edges of a feature to be identified in the region are determined, and computational analysis of edge-related data is performed to positively identify the feature(s). Another embodiment relates to a method of automated detection of undercut on a feature using off-axis beam tilting. For each beam tilt, a determination is made of difference data between the edge measurement of one side and the edge measurement of the other side. An undercut on the feature is detected from the difference data. Other embodiments are also disclosed.
Gas purge systems and methods and a spectroscopic ellipsometer are disclosed. A purge gas system may include an input beam optics housing, a collection optics housing and a gas purge manifold. The input beam optics housing may include a first gas flow path between a first gas inlet and an aperture in a first nose cone proximate a measurement position. The collection optics housing may include a second gas flow path between a second gas inlet and an aperture in a second nose cone proximate the measurement position. The gas purge manifold may be disposed between the input beam optics housing and the collection optics housing. The gas purge manifold has a third gas flow path between a third gas inlet and an aperture in the gas manifold proximate the measurement position. The ellipsometer may include input beam optics in the input beam optics housing and collection optics in the collection optics housing. First, second, and third flows of purge gas may be supplied through the input beam optics housing, collection optics housing and gas purge manifold respectively. The purge gas is delivered directly to a measurement position of a surface of a substrate through the gas purge manifold, the first nosecone and the second nose cone.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01J 4/00 - Mesure de la polarisation de la lumière
62.
Methods for accurate identification of an edge of a care area for an array area formed on a wafer and methods for binning defects detected in an array area formed on a wafer
Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
63.
Registration target design for managing both reticle grid error and wafer overlay
A combined overlay target and methods for its use are disclosed. The combined overlay target includes a grating-type overlay target and an image placement error target having substantially perpendicular features with spaced apart edges. The grating-type target and the image placement error target have a common centroid and are sufficiently separated that the grating-type overlay target does not interfere with measurement of image placement error.
One embodiment relates to an electron beam apparatus for automated imaging of a substrate surface. An electron source is configured to emit electrons, and a gun lens is configured to focus the electrons emitted by the electron source so as to form an electron beam. A condenser lens system is configured to receive the electron beam and to reduce its numerical aperture to an ultra-low numerical aperture. An objective lens is configured to focus the ultra-low numerical aperture beam onto the substrate surface. Other embodiments are also disclosed.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
G21K 7/00 - Microscopes à rayons gamma ou à rayons X
H01J 3/14 - Dispositifs pour la focalisation ou la réflexion du rayon ou du faisceau
65.
Electron beam lithography method and apparatus using a dynamically controlled photocathode
Embodiments of the invention include an electron beam lithography device using a dynamically controllable photocathode capable of producing a patterned electron beam. One such implementation includes a dynamic pattern generator configurable to produce an electron beam having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source arranged to direct a light beam onto the dynamic pattern generator to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate mounted on a stage.
A method and tool for generating reconstructed images that model the high NA effects of a lithography tool used to image patterns produced by a mask. Comparison of the reconstructed images with reference images characterize the mask. The method involves providing a mask reticle for inspection. Generating matrix values associated with a high NA corrective filter matrix that characterizes a high NA lithography system used to print from the mask. Illuminating the mask to produce a patterned illumination beam that is filtered with filters associated with the high NA corrective filter matrix elements to obtain a plurality of filtered beams that include raw image data that is processed to obtain a reconstructed image that is further processed and compared with reference images to obtain mask characterization information.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
G01N 21/956 - Inspection de motifs sur la surface d'objets
67.
ELECTRON BEAM LITHOGRAPHY METHOD AND APPARATUS USING A DYNAMICALLY CONTROLLED PHOTOCATHODE
Embodiments of the invention include an electron beam lithography device (200) using a dynamically controllable photocathode capable of producing a patterned electron beam (208). One such implementation includes a dynamic pattern generator ( 202) configurable to produce an electron beam (208) having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source. (201) arranged to direct a light beam onto the dynamic pattern generator (202) to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics (215) configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate (205) mounted on a stage (206).
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/073 - Canons à électrons utilisant des sources d'électrons à émission par effet de champ, à photo-émission ou à émission secondaire
A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
Various methods and systems for identifying defect types on a wafer are provided. One computer-implemented method for identifying defect types on a wafer includes acquiring output of an inspection system for defects detected on a wafer. The output is acquired by different combinations of illumination and collection channels of the inspection system. The method also includes identifying defect types of the defects based on the output acquired by a set of the different combinations. The set of the different combinations is selected based on the defect types to be identified on the wafer and a wafer type of the wafer such that a different set of the different combinations of the illumination and collection channels is used for identifying different defect types on different wafer types.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
71.
METHOD OF DATA ENCODING, COMPRESSION, AND TRANSMISSION ENABLING MASKLESS LITHOGRAPHY
A method and tool for conducting charged-particle beam direct write lithography is disclosed. A disclosed method involves condensing an initial design file down to a set of profiles and a pattern of relative locations to form a formatted pattern file. The formatted pattern file is adjusted to accommodate desired pattern corrections. Portions of the formatted pattern records are extracted to form data strips that have a plurality of channels with a pattern of profiles and spatial indicators. Data strips are sequentially read to construct a printable pattern of profiles and spatial indicators that specify the locations of the profiles. Additionally, the pattern of profiles are sequentially printed from each data strip onto a substrate to form the desired pattern on the substrate.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Disclosed are apparatus and methods for optimizing a metrology tool, such as an optical or scanning electron microscope so that minimum human intervention is achievable during the optimization. In general, a set of specifications and an initial input data are initially provided for a particular target. The specifications provide limits for characteristics of images that are to be measured by the metrology tool. The metrology tool is then automatically optimized for measuring the particular target so as to meet one or more of the provided specifications without further significant human intervention with respect to the metrology tool. In one aspect, the input data provided prior to the automated optimization procedure includes a plurality of target locations and a synthetic image of the particular target.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
At least one pair of capacitively coupled electrodes contained in a structure is used to sense the deflection of a diaphragm in a pressure or force sensor for measuring the pressure or force exerted on the diaphragm. Preferably the structure has properties (such as one or more of the following: dimensions, hardness, area and flexibility) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel. For measuring shear force, at least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structure have properties (such as one or more of the following: dimensions and coefficient of friction) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.
G01L 5/00 - Appareils ou procédés pour la mesure des forces, du travail, de la puissance mécanique ou du couple, spécialement adaptés à des fins spécifiques
G01L 1/14 - Mesure des forces ou des contraintes, en général en mesurant les variations de la capacité ou de l'inductance des éléments électriques, p. ex. en mesurant les variations de fréquence des oscillateurs électriques
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
74.
Method for generating a design rule map having spatially varying overlay budget
The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized tolerance to overlay errors for different spatial locations on the design map. This spatially varying overlay error budget can be used to disposition wafers. For example, overlay information obtained from measured metrology targets on a fabricated wafer are compared with the spatially varying overlay error budget to determine if the wafer overlay satisfies the required specification.
A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.
Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.
To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.
Methods, defect review tools, and systems for locating a defect in a defect review process are provided. One method includes acquiring one or more images and data from an inspection tool. The one or more images illustrate an area on a specimen in which a defect to be reviewed is located. The data indicates a position and features of the defect within the area. The method also includes acquiring one or more additional images of the specimen proximate the position of the defect indicated in the data using an imaging subsystem of a defect review tool. In addition, the method includes identifying a portion of the one or more additional images that corresponds to the one or more images. The method further includes determining a position of the defect within the portion of the one or more additional images using the data.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
79.
Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool
Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool are provided. One method for detecting pinholes in a film formed on a wafer includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. This method also includes detecting the pinholes in the film formed on the wafer using the second output. One method for monitoring a thermal process tool includes generating output responsive to light from a wafer using an inspection system. The output includes the first and second output described above. The wafer was processed by the thermal process tool prior to generating the output. The method also includes monitoring the thermal process tool using the second output.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
80.
Methods and systems for determining a characteristic of a wafer
Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
81.
Methods and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data
Various methods, carrier media, and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data are provided. One computer-implemented method includes combining pixel-level data acquired for the specimen by a bright field channel and a dark field channel of an inspection system. The method also includes detecting defects on the specimen by applying a two-dimensional threshold to the combined data. The two-dimensional threshold is defined as a function of a threshold for the data acquired by the bright field channel and a threshold for the data acquired by the dark field channel.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G01N 37/00 - Détails non couverts par les autres groupes de la présente sous-classe
G01D 3/00 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe
82.
Methods and systems for utilizing design data in combination with inspection data
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
84.
Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer based on one or more fabrication processes that will be used to form a metrology target structure on the wafer and one or more initial metrology target structure designs. The method also includes creating the metrology target structure design based on results of the simulating step.
G02B 23/10 - Télescopes ou lunettes d'approche, p. ex. jumellesPériscopesInstruments pour voir à l'intérieur de corps creuxViseursPointage optique ou appareils de visée comprenant des prismes ou des miroirs projetant dans le champ de vision des indications supplémentaires, p. ex. données par des collimateurs
85.
Systems and methods for measuring one or more characteristics of patterned features on a specimen
Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.
G01B 11/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
Various methods and systems for determining a position of inspection data in design data space are provided. One computer-implemented method includes determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer. The method also includes aligning the centroid to a centroid of a geometrical shape describing the alignment target. In addition, the method includes assigning a design data space position of the centroid of the alignment target as a position of the centroid of the geometrical shape in the design data space. The method further includes determining a position of inspection data acquired for the wafer in the design data space based on the design data space position of the centroid of the alignment target.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
87.
Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
88.
Overlay metrology using the near infra-red spectral range
A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for determining a position of inspection data in design data space includes aligning data acquired by an inspection system for alignment sites on a wafer with data for predetermined alignment sites. The method also includes determining positions of the alignment sites on the wafer in design data space based on positions of the predetermined alignment sites in the design data space. In addition, the method includes determining a position of inspection data acquired for the wafer by the inspection system in the design data space based on the positions of the alignment sites on the wafer in the design data space. In one embodiment, the position of the inspection data is determined with sub-pixel accuracy.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
90.
Methods and systems for binning defects detected on a specimen
Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
91.
Systems and methods for inspecting a wafer with increased sensitivity
Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
92.
Methods and apparatus for designing and using micro-targets in overlay metrology
Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.
A method and apparatus for propagating charge through a sensor and implementation thereof is provided. The method and apparatus may be used to inspect specimens, the sensor operating to advance an accumulated charge between gates of the TDI sensor. The design implementation provides a set of values representing a plurality of out of phase signals, such as sinusoidal or trapezoidal signals. These out of phase signals are converted and transmitted to the sensor. The converted signals cause the sensor to transfer charges in the sensor toward an end of the sensor. Aspects such as feed through correction and correction of nonlinearities are addressed.
H04N 3/14 - Détails des dispositifs de balayage des systèmes de télévisionLeur combinaison avec la production des tensions d'alimentation par des moyens non exclusivement optiques-mécaniques au moyen de dispositifs à l'état solide à balayage électronique
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
H01L 27/148 - Capteurs d'images à couplage de charge
H01L 29/66 - Types de dispositifs semi-conducteurs
94.
Methods and systems for detecting defects in a reticle design pattern
Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01B 5/28 - Dispositions pour la mesure caractérisées par l'utilisation de techniques mécaniques pour mesurer la rugosité ou l'irrégularité des surfaces
95.
Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
Computer-implemented methods for performing one or more defect-related functions are provided. One method for identifying noise in inspection data includes identifying events detected in a number of sets of inspection data that is less than a predetermined number as noise. One method for binning defects includes binning the defects into groups based on defect characteristics and the sets of the inspection data in which the defects were detected. One method for selecting defects for defect analysis includes binning defects into group(s) based on proximity of the defects to each other and spatial signatures formed by the group(s). A different method for selecting defects for defect analysis includes selecting defects having the greatest diversity of defect characteristic(s) for defect analysis. One method includes classifying defects on a specimen using inspection data generated for the specimen combined with defect review data generated for the specimen.
G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)
Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
A method and apparatus for propagating charge through a time division and integration (TDI) sensor is provided. The method and apparatus may be used with the TDI sensor to inspect specimens, the TDI sensor operating to advance an accumulated charge between gates of the TDI sensor. The design comprises controlling voltage waveform shapes for waveforms advancing the accumulated charge between gates in a substantially nonsquare waveform, such as a composite, sinusoidal, or other shaped waveform. Controlling voltage waveform shapes operates at different voltage phases in adjacent gates to provide a substantially de minimis net voltage.
H04N 3/14 - Détails des dispositifs de balayage des systèmes de télévisionLeur combinaison avec la production des tensions d'alimentation par des moyens non exclusivement optiques-mécaniques au moyen de dispositifs à l'état solide à balayage électronique
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
99.
Computer-implemented methods and systems for classifying defects on a specimen
Various computer-implemented methods for classifying defects on a specimen are provided. One method includes assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The method also includes displaying information about the defect groups to a user. In addition, the method includes allowing the user to assign a classification to each of the defect groups. Systems configured to classify defects on a specimen are also provided. One system includes program instructions executable on a processor for assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The system also includes a user interface configured for displaying information about the defect groups to a user and allowing the user to assign a classification to each of the defect groups.
Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.
G06F 11/22 - Détection ou localisation du matériel d'ordinateur défectueux en effectuant des tests pendant les opérations d'attente ou pendant les temps morts, p. ex. essais de mise en route
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