Method of improving the performance and safety of a Li-ion battery. The method includes using a nitrile-based small organic compound of general formula I, V or IX outlined in the application in association with the electrolyte of the battery. An electrolyte including a nitrile-based small organic compound. A battery including the electrolyte.
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
C07C 255/50 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné à des atomes de carbone de cycles aromatiques à six chaînons non condensés
C07C 255/51 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné à des atomes de carbone de cycles aromatiques à six chaînons non condensés contenant au moins deux groupes cyano liés au squelette carboné
C07C 255/55 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes cyano et des groupes hydroxy estérifiés liés au squelette carboné
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
A battery pack is provided and includes: a plurality of batteries; a heat absorbing agent; a heat absorbing member that houses the heat absorbing agent; and a holder that holds the plurality of batteries and the heat absorbing member, in which the holder includes a holder member having a facing surface facing an outer surface of the heat absorbing member, the holder member is a porous body having continuous pores in which a plurality of pores are continuous, and at least one pore of the plurality of pores included in the continuous pores is opened in the facing surface.
H01M 10/653 - Moyens de commande de la température associés de façon structurelle avec les éléments caractérisés par des matériaux électriquement isolants ou thermiquement conducteurs
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/291 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par des éléments d’espacement ou des moyens de positionnement dans les racks, les cadres ou les blocs caractérisés par leur forme
A radio-frequency module includes first and second power amplifiers, a first low-noise amplifier, and a first switch. Each of a first primary terminal, a second primary terminal, and a first diversity terminal of the first switch is connectable to each of a first antenna terminal, a second antenna terminal, and a second diversity terminal of the first switch. The first power amplifier connects to one of the first and second primary terminals. The second power amplifier connects to the other one of the first and second primary terminals. The first low-noise amplifier connects to the first primary terminal or the second primary terminal. The first diversity terminal is connectable to a second low-noise amplifier included in a diversity module. The second diversity terminal is connectable to a third antenna terminal included in the diversity module.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
H04W 88/06 - Dispositifs terminaux adapté au fonctionnement dans des réseaux multiples, p.ex. terminaux multi-mode
A semiconductor module includes: a first substrate having a main surface; a second substrate having flexibility and including a connection portion connected to the first substrate and an interstice formation portion overlapping with the first substrate in a plan view of the main surface seen in a direction perpendicular to the main surface and forming an interstice between the second substrate and the first substrate; a first semiconductor chip provided in the interstice at least partially; and a second semiconductor chip provided at an opposite side of the second substrate from an interstice side, the second substrate has a first conductive layer supplied with a reference potential, and in the plan view, at least part of the first conductive layer overlaps with the first semiconductor chip and the second semiconductor chip.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
A battery pack is provided and includes a secondary battery; an exterior case that houses the secondary battery; a lead plate electrically connected to a terminal of the secondary battery; a first member that surrounds a connecting portion where the terminal and the lead plate are connected, is sandwiched between the secondary battery and the lead plate around the connecting portion, and has waterproofness; and a second member that is in contact with the lead plate and the exterior case and has heat dissipation.
H01M 50/24 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par les propriétés physiques des boîtiers ou des bâtis, p.ex. dimensions adaptés pour protéger les batteries de leur environnement, p.ex. de la corrosion
H01M 10/613 - Refroidissement ou maintien du froid
H01M 10/6551 - Surfaces spécialement adaptées à la dissipation de la chaleur ou à la radiation, p.ex. nervures ou revêtements
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/289 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par des éléments d’espacement ou des moyens de positionnement dans les racks, les cadres ou les blocs
H01M 50/503 - Interconnecteurs pour connecter les bornes des batteries adjacentes; Interconnecteurs pour connecter les cellules en dehors d'un boîtier de batterie caractérisées par la forme des interconnecteurs
H01M 50/507 - Interconnecteurs pour connecter les bornes des batteries adjacentes; Interconnecteurs pour connecter les cellules en dehors d'un boîtier de batterie comprenant un arrangement de plusieurs barres omnibus réunies dans une structure de conteneur, p.ex. modules de barres omnibus
A high-frequency module includes a substrate having a first main surface and a second main surface facing each other and a through-hole that extends through the substrate from the first main surface to the second main surface, a first electronic component, and a second electronic component, and the second electronic component is disposed inside the through-hole of the substrate, the first electronic component is disposed so as to extend over the first main surface of the substrate and the second electronic component, the first electronic component is connected to the first main surface of the substrate with a first connection member interposed therebetween, the second electronic component is connected to the first electronic component with a second connection member interposed therebetween, and a first direct current signal is supplied to the second electronic component through the first connection member, the first electronic component, and the second connection member.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/13 - Supports, p.ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
An acoustic wave device includes acoustic wave resonators including a support substrate, a piezoelectric body layer, and a functional electrode. The support substrate includes a cavity portion at a position overlapping a portion of the functional electrode in a first direction which is a lamination direction of the support substrate and the piezoelectric body layer. The cavity portion is connected to an opening located in a portion of the support substrate which opposes the piezoelectric body layer. The acoustic wave resonators include a first resonator and a second resonator having a larger intersecting width of the functional electrode than the first resonator. In a cross section along the first and second directions which is a direction in which a current flows inside the acoustic wave resonator, the taper angle of the second resonator is larger than the taper angle of the first resonator.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
8.
NEGATIVE ELECTRODE MATERIAL FOR LITHIUM BATTERY AND LITHIUM ION SECONDARY BATTERY COMPRISING SAME
A negative electrode material for a lithium battery and a lithium ion secondary battery including same are provided. The negative electrode material for a lithium battery includes a silicon monoxide satisfying, in terms of chromaticity, 30≤L≤50, 3≤a≤10, and 1.5≤b≤10, and preferably 35≤L≤45, 4≤a≤9, and 4≤b≤10, and having a total color difference ΔE of 39≤ΔE≤50 relative to black.
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
9.
MULTILAYER INDUCTOR, MULTILAYER INDUCTOR ARRAY, AND METHOD OF MANUFACTURING MULTILAYER INDUCTOR
A multilayer inductor includes an element body that constitutes a magnetic body by stacking magnetic layers containing iron powder and that has a coil obtained by winding a coil conductor inside the magnetic body, and an outer electrode that is electrically connected to the coil conductor. A resin is provided in voids inside the magnetic body, and the resin is provided in at least a part of pores in the coil conductor at least in a vicinity of a magnetic layer.
An N-path filter includes an N number of signal paths, where N is an integer of three or more, connected in parallel with one another between an input-output terminal and an input-output terminal. A signal path includes a switch that is connected to the input-output terminal and that modulates an input signal, a switch that is connected to the input-output terminal and that modulates the input signal with the same phase as the switch, and a base filter that is connected between the switch and the switch. The switches modulate the input signal with a phase that is one of phases of the signal paths defining one period and is different for each of the signal paths. Base filters are each a low pass filter including inductors.
An acoustic wave device includes a support substrate including a space portion, a piezoelectric body layer on the support substrate, a functional electrode on the piezoelectric body layer and at least partially overlapping with the space portion in plan view along a lamination direction of the support substrate and the piezoelectric body layer, and a structure on the piezoelectric body layer and having a smaller coefficient of thermal linear expansion than the piezoelectric body layer. The structure includes a region located in a region of the piezoelectric body layer other than a region where the functional electrode is provided and that does not overlap with the space portion in the plan view.
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
12.
RADIO FREQUENCY CIRCUIT AND COMMUNICATION APPARATUS
A radio frequency circuit includes an antenna connection terminal, an input terminal, an output terminal, a filter having a pass band including at least part of a transmission band of Band A for FDD, a filter having a pass band including at least part of a reception band of the Band A, and a switch that includes terminals. The antenna connection terminal is connected to the terminal. The filter is connected between the terminal and the input terminal. The filter is connected between the terminal and the output terminal. The switch is configured to switch between first connection, second connection, and third connection. In the first connection, the terminal is connected to the terminal and the terminal is not connected to the terminal. In the second connection, the terminal is connected to the terminal and the terminal is not connected to the terminal.
Provided is a secondary battery with which excellent battery characteristics can be obtained. This secondary battery comprises: a positive electrode; a negative electrode containing a negative electrode active material; and an electrolytic solution. The negative electrode active material contains a silicon-containing material. The ratio of the per-unit-area capacity of the positive electrode to the per-unit-area capacity of the negative electrode is 0.20-0.60. The lithium metal-based potential of the negative electrode at a voltage of 4.2 V ± 0.1 V is 115-180 mV.
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
Provided is a three-terminal multilayer ceramic capacitor which can suppress the formation of cracks due to stress relaxation and improve joinability and mountability to a substrate. Provided is a three-terminal multilayer ceramic capacitor 10 wherein: third and fourth base electrode layers 32c, 32d have a joining part 40, which is joined to first and second side surfaces 12c, 12d, and first and second separated parts 45a, 45b, which are separated further from the first and second side surfaces 12c, 12d toward first and second end surfaces 12e, 12f than the joining part 40 is; and third and fourth plating layers 34c, 34b have first and second edge parts 51a, 51b, which are formed along the first and second separated parts 45a, 45b between the first and second separated parts 45a, 45b and the first and second side surfaces 12c, 12d, and a surface layer part 50, which covers the outer surfaces of the third and fourth base electrode layers 32c, 32d continuously with the first and second edge parts 51a, 51b.
The present invention provides a secondary battery which is capable of achieving excellent battery characteristics and excellent safety. This secondary battery is provided with a positive electrode, a negative electrode, and an electrolyte solution that contains a solvent. The solvent contains an anisole compound represented by formula (1), and the content of the anisole compound in the solvent is 30% by weight or more.
Provided is a glove-type input device comprising a glove worn on the hand of a user and a plurality of piezoelectric elements. The piezoelectric elements are disposed on the outside and the inside of the glove.
G01L 5/00 - Appareils ou procédés pour la mesure des forces, du travail, de la puissance mécanique ou du couple, spécialement adaptés à des fins spécifiques
abb (in the formula, M is at least one type of element selected from the group consisting of groups 3, 4, 5, 6, and 7, Q is at least one type of element selected from the group consisting of groups 12, 13, 14, 15, and 16 (excluding O), a is a value of 0-2, and b is a value higher than 0 but no higher than 2), contains a metal element and/or a metalloid element on the surface and/or between layers thereof, and has a halogen element content of 0.90 mass% or less.
An acoustic filter is provide that includes a substrate; a piezoelectric plate attached to the substrate; and a plurality of bulk acoustic resonators including one or more shunt resonators and one or more series resonators. One or more of the shunt resonators includes an interdigital transducer having interdigital fingers on the piezoelectric plate; a front-side frequency setting layer at least partially on a front side of the at least one shunt resonator; and a back-side frequency setting layer on a back side of the at least one shunt resonator. Moreover, a thickness of the back-side frequency setting layer is at least 30% of a total thickness of the front-side frequency setting layer and the back-side frequency setting layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A radio frequency module comprises a first component, a second component and a pedestal all supported by a first surface. The first component, the second component and pedestal all extend along a first axis perpendicular to the first surface. Along the first axis, the first component is longer than the second component and the pedestal is between the second component and the first surface. A first solder is between the first surface and the first component, a second solder is between the pedestal and the second component, and a third solder is between the first surface and the pedestal. Along a second axis which is parallel to the first surface, a first dimension of the first solder is greater than a second dimension of the second solder, and
a third dimension of the third solder is greater than the second dimension.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
An acoustic wave device includes acoustic wave resonators each including a support substrate, a piezoelectric body layer, and a functional electrode. The support substrate includes a cavity portion overlapping a portion of the functional electrode in a first direction. The cavity portion is connected to an opening in a portion of the support substrate facing the piezoelectric body layer. The acoustic wave resonators include a first resonator and a second resonator with a larger intersecting width of the functional electrode than the first resonator. A taper angle of the first resonator is larger than a taper angle of the second resonator.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A multilayer ceramic capacitor includes a multilayer ceramic capacitor main body, metal terminals connected to external electrodes via a bonding material, and an exterior material covering the multilayer ceramic capacitor main body. The metal terminals include bonding surfaces that bond the bonding material and contact surfaces in contact with the exterior material. The contact surfaces include an outermost surface metal film and a lower wettability surface having a lower wettability than that of the outermost surface metal film. A protruding portion is at a boundary portion between a surface of the outermost surface metal film and the lower wettability surface.
A high frequency circuit includes power amplifiers, filters including a band A in their pass bands, filters including a band B in their pass bands, and a switch circuit that switches the connection between an antenna terminal and two terminals and switches the connection between another antenna terminal and two other terminals. The output end of one power amplifier is connected to the input ends of two of the filters, the output end of one filter is connected to one of the terminals, the output end of another filter is connected to another terminal, the output end of the other power amplifier is connected to the input ends of two others of the filters, the output end of one of the other filters is connected to one of the other terminals, and the output end of another of the other filters is connected to another of the other terminals.
An acoustic resonator device is provided that includes a substrate comprising a base and an intermediate layer, the intermediate layer comprising a silicon nitride trap-rich layer: a dielectric layer adjacent to the silicon nitride trap-rich layer; a piezoelectric layer having front and back surfaces, the back surface facing the dielectric layer; and an interdigital transducer (IDT) on the piezoelectric layer such that interleaved fingers of the IDT extend on the piezoelectric layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
A bonding layer including a first metal region is disposed on at least a portion of an upper surface of a support substrate. An underlying layer including a sub-collector region that is made of a conductive semiconductor material and is electrically connected to the first metal region is disposed on the bonding layer. A first transistor including a collector layer electrically connected to the sub-collector region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer is disposed on the sub-collector region. On the sub-collector region, a collector electrode electrically connected to the sub-collector region is located outward of the first transistor to overlap the first metal region in plan view.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/14 - Supports, p.ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
A semiconductor device includes a substrate, a circuit element disposed on or above the upper surface of the substrate, an electrode disposed on or above the upper surface of the substrate and connected to the circuit element, and a conductor pillar bump for external connection which is disposed on the substrate and electrically connected to the electrode or the circuit element. The substrate includes a first base and a second base disposed on the first base. The circuit element and the electrode are disposed on the second base. The first base has lower thermal resistance than the second base.
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
A battery pack is provided and includes a battery cell assembly including a plurality of battery cells and a battery holder in which the plurality of battery cells are stored; and an exterior case that includes a bottom plate and a plurality of side plates intersecting with the bottom plate at a peripheral edge of the bottom plate and stores the battery holder, in which the battery holder has a side portion facing the side plate of the exterior case, the battery holder is provided with at least one protruding portion protruding from the side portion, the side plate of the exterior case is provided with a through hole into which the protruding portion is inserted, a portion of the battery cell assembly is in contact with an inner surface of the side plate of the exterior case, and a distance between an outer surface corresponding to the first side portion and an outer surface corresponding to the second side portion of the battery cell assembly when the battery holder is not stored in the exterior case is equal to or longer than a distance between the first side plate and the second side plate of the exterior case.
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/244 - Boîtiers secondaires; Bâtis; Dispositifs de suspension; Dispositifs de manutention; Supports caractérisés par leur procédé de montage
H01M 50/289 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par des éléments d’espacement ou des moyens de positionnement dans les racks, les cadres ou les blocs
A wireless power receiver device includes a receiver coil, an electronic circuit, a load circuit, a magnetic sheet, and a housing. The magnetic sheet is disposed with respect to the receiver coil. The housing, in which the receiver coil, the electronic circuit, the load circuit, and the magnetic sheet are disposed, has a three-dimensional complex structure body. The receiver coil has a shape having multiple curvatures and bending three-dimensionally along the outer surface or the inner surface of the three-dimensionally structured housing. The magnetic sheet is disposed in the inner space of the receiver coil three-dimensionally at such a position that the magnetic sheet surrounds the electronic circuit and the load circuit, so as to form the magnetic path of the main magnetic flux, which is linked with the receiver coil, with respect to a magnetic field from the outside of the three-dimensionally structured housing.
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
H02J 50/00 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique
H02J 50/70 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique mettant en œuvre la réduction des champs de fuite électriques, magnétiques ou électromagnétiques
H02J 50/80 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique mettant en œuvre l’échange de données, concernant l’alimentation ou la distribution d’énergie électrique, entre les dispositifs de transmission et les dispositifs de réception
A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.
An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, an IDT electrode on the piezoelectric layer and including a pair of busbars and electrode fingers, and mass addition films on the electrode fingers. An acoustic reflection portion overlaps at least a portion of the IDT electrode. d/p is about 0.5 or smaller. A region in which adjacent electrode fingers overlap each other is a cross region including a central region, and first and second edge regions. At least a portion of the mass addition films overlap the central region. A width of at least one of the mass addition films is different from a width of other mass addition films.
An antenna module includes a dielectric substrate, loop antennas, and power feeding wires that transmit high-frequency signals to the antennas. One loop antenna is positioned inside the loop of another in plan view from the winding axis direction. Each power feeding wire has a flat electrode and a via extending along the winding axis. The flat electrodes partially overlap with their respective loop antennas but not with others. At least one via connects to its corresponding flat electrode at a position offset from the antenna in the polarization direction.
H01Q 7/00 - Cadres ayant une distribution du courant sensiblement uniforme et un diagramme de rayonnement directif perpendiculaire au plan du cadre
H01Q 5/321 - Dispositions permettant un fonctionnement sur différentes gammes d’ondes Éléments rayonnants individuels ou couplés, chaque élément étant alimenté d’une façon non précisée utilisant des circuits ou des composants dont la réponse dépend de la fréquence, p.ex. des circuits bouchon ou des condensateurs situés dans un élément rayonnant ou entre des éléments rayonnants connectés
H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
31.
ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
A flexible printed circuit board that includes: a first surface section that has a first electrode electrically connected to a piezoelectric element and extends in contact with a first main surface of the piezoelectric element; a second surface section that is bent from an end of the first surface section closest to a side wall of a case, and extends upward along the side wall; and a third surface section that has a second electrode electrically connected to a first end of a terminal member, and is bent in an S-shape from an upper end of the second surface section so as to face the first surface section with an interval interposed therebetween. The first surface section and at least a portion of the second surface section closer to the first surface section are embedded in a first filling material.
H10N 30/87 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure Électrodes ou interconnexions, p.ex. connexions électriques ou bornes
H10N 30/063 - Formation d’interconnexions, p.ex. d’électrodes de connexion de parties piézo-électriques ou électrostrictives multicouches
H10N 30/30 - Dispositifs piézo-électriques ou électrostrictifs à entrée mécanique et sortie électrique, p.ex. fonctionnant comme générateurs ou comme capteurs
Three-dimensional (3-D) integrated circuit structures and circuits that enable high performance FET switch arrays while consuming less planar area than conventional 2-D IC dies. In one embodiment, an integrated FET switch circuit includes a first wafer/die including a first set of groups of FET cells, and a second wafer/die joined to the first wafer/die through hybrid bonding interconnects and including a second set of groups of FET cells, wherein a first side drain bus of each group in the first wafer/die is connected through the hybrid bonding interconnects to a second side source bus of a first corresponding group in the second wafer/die; and wherein a second side source bus of each group in the first wafer/die is connected through the hybrid bonding interconnects to a first side drain bus of a second corresponding group in the second wafer/die.
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
1212121212122 in the height direction x ≥ at least one among thicknesses t1, t2 of the first and second facing electrode parts 26a, 26b in the height direction.
The present invention is a chip-type electronic component, provided with a ceramic element, an external electrode, and an insulating coating, wherein: the ceramic element comprises a pair of end surfaces, a base surface that connects the pair of end surfaces and is located on a mounting surface side of the chip-type electronic component, an upper surface that is opposite the base surface, and a pair of side surfaces that connect the base surface and the upper surface; the external electrode covers the end surfaces of the ceramic element and regions of the base surface, the upper surface, and the pair of side surfaces of the ceramic element that adjoin the end surfaces; the base surface of the ceramic element includes a first region that is not covered by the external electrode and a boundary line between the first region and the external electrode; the insulating coating is disposed on the base surface side of the ceramic element and covers the first region, the boundary line, and a portion of the external electrode; and, when viewed in the direction of the base surface, the outline of an electrode-covering portion of the insulating coating that covers part of the external electrode is an outline with a shape that is convex toward the end surfaces.
The present invention provides a multilayer ceramic electronic component in which excessive outflow of a joining material can be adequately inhibited and the occurrence of solder splashing can be inhibited. This multilayer ceramic capacitor 1 comprises: a multilayer ceramic capacitor main body 2; metal terminals (100A, 100B) which are connected to external electrodes (40A, 40B) by the intermediary of a bonding material 5; and an outer covering material 3 which covers the multilayer ceramic capacitor main body 2 and the like. The metal terminals (100A, 100B) have bonding surfaces (110A1, 110B1) which are bonded to the bonding material 5 and contact surfaces (CS1, CS2) which are in contact with the outer covering material 3. The contact surfaces (CS1, CS2) comprise the surfaces of outermost surface metal films (100Ab2, 100Bb2), and low-wettability surfaces (E1a, E1b, E1c, E2a, E2b, E2c) which have a lower wettability than the surfaces of the outermost surface metal films (100Ab2, 100Bb2), and protrusions (100Ac, 100Bc) are disposed on the boundaries between the surfaces of the outermost surface metal films (100Ab2, 100Bb2) and the low-wettability surfaces (E1a, E1b, E1c, E2a, E2b, E2c).
A capacitor unit 1 comprises: a plurality of capacitor elements 10 which are connected in parallel to each other; and a pair of connection conductors 11 and 12 which electrically connect the first electrodes or the second electrodes of the plurality of capacitor elements 10 to each other, respectively. The connection conductors 11 and 12 each have a terminal connection part 20 on the side opposite to the part that is connected to the capacitor elements 10. In a first embodiment of the present invention, the equivalent series inductance and/or the equivalent series resistance of the capacitor element 10 which is closest to the terminal connection part 20 is smaller than the equivalent series inductance and/or the equivalent series resistance of the other capacitor elements 10.
A system control device (40) comprises: a timing unit (43) that measures time; a calibration information generation unit (45) that generates calibration information for a plurality of slave CO2 sensor values; and a ventilation control unit (44) that generates a ventilation control command for causing a plurality of ventilation mechanisms to perform forced ventilation. Upon detecting that the time for forced ventilation has been reached, the timing unit (43) provides notification to the ventilation control unit (44). The ventilation control unit (44) generates a ventilation control signal in response to the notification of forced ventilation, and outputs the ventilation control signal to a plurality of ventilation mechanisms (61-64). The plurality ventilation mechanisms (61-64) perform forced ventilation on the basis of the ventilation control signal. The calibration information generation unit (45) generates the calibration information on the basis of the plurality of slave CO2 sensor values and a master CO2 sensor value acquired during a calibration reference acquisition period (Trc) set after forced ventilation.
F24F 11/49 - Aménagements de commande ou de sécurité en relation avec le fonctionnement du système, p.ex. pour la sécurité ou la surveillance en assurant un fonctionnement correct, p.ex. par des essais ou par des contrôles de la configuration
F24F 11/61 - Aménagements de commande ou de sécurité caractérisés par des interfaces utilisateurs ou par la communication utilisant des minuteurs
F24F 11/77 - Aménagements de commande ou de sécurité - Détails de construction de tels systèmes pour la commande de l’apport en air traité, p.ex. commande de la pression pour la commande du débit d'air ou de la vitesse de l’air en commandant la vitesse de rotation des ventilateurs
G01D 3/00 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
A multilayer ceramic capacitor includes a multilayer body, and first and second external electrodes. The multilayer body further includes an extended dielectric portion extending from at least one of a first side margin portion and a second side margin portion to cover only a portion of an inner layer portion at at least one of a first end surface and a second end surface.
A multilayer ceramic capacitor includes an element body portion including dielectric layers and internal electrode layers, and external electrodes. In a cross section of the element body portion extending through a central portion in a length direction, a deviation amount in a width direction between internal electrode layers adjacent to each other in a thickness direction is smaller than about 3 μm, each of the internal electrode layers includes an opposing portion opposed to the internal electrode layer, and a lead-out portion, a width of the opposing portion is greater than a width of the lead-out portion, a region of the element body portion where the lead-out portions overlap in the thickness direction includes a thick portion thicker than the central portion in the length direction, and end portions of the lead-out portions in the thickness direction deviate by about 3 μm or more in the width direction.
A multilayer ceramic capacitor includes an element body portion including dielectric layers and internal electrode layers including Ni laminated in a thickness direction. In the internal electrode layers, a width of an opposing portion is larger than a width of a lead-out portion. The element body portion includes first, second, and third regions in order from an inside to an outside in the width direction in each of a region from an end portion on one side of the lead-out portion in the width direction to the first side surface and a region from an end portion on another side of the lead-out portion to the second side surface. When grain sizes of dielectrics included in the first, second, and third regions are respectively defined as gr1, gr2, and gr3, a relationship of gr1
An external electrode includes a base electrode layer, a Ni plating layer, and a Sn plating layer. The base electrode layer is provided on an element body portion. The Ni plating layer is provided above the base electrode layer. The Sn plating layer is provided on the Ni plating layer. The base electrode layer includes Ni as a primary component and a dielectric material.
A multilayer ceramic capacitor includes a laminate including dielectric layers and internal electrode layers, first and second main surfaces, first and second side surfaces, and first and second end surfaces, and external electrodes covering the first and second end surfaces, respectively, and connected to the internal electrode layers. The internal electrode layers are divided into M groups each including N internal electrode layers. A total number of internal electrode layers included in the first to M-th groups is 1,000 or more. A thickness of the dielectric layer is about 0.8 μm or more. In at least one set of an m-th group and an (m+1)-th group, a deviation amount α1 is less than a deviation amount β1. In the m-th group and the (m+1)-th group, a deviation amount α2 is less than a deviation amount β2.
An electrochemical device is provided and includes a positive electrode, a negative electrode, a separator, and an electrolyte, and at least one of the positive electrode or the negative electrode includes first active material particles and fibrous carbon, the first active material particles are retained in a bridge structure formed by the fibrous carbon, the separator includes insulating inorganic particles and an inorganic binder that bonds the insulating inorganic particles together, the electrolyte includes a nonaqueous solvent and a supporting salt, the positive electrode, the negative electrode, and the separator are impregnated with the electrolyte, and the separator and at least one of the positive electrode or the negative electrode are bonded together by the inorganic binder.
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
In an IC chip, a control unit is connected to at least one of a first switch unit and a second switch unit. In plan view from a thickness direction of a substrate, a plurality of first terminals are located between the first switch unit and the second switch unit in a first direction, and are arranged in a line in a second direction intersecting with the first direction. In plan view from the thickness direction of the substrate, a plurality of second terminals are located between the plurality of first terminals, and the first switch unit or the second switch unit, and are arranged in a line in the second direction. The plurality of first terminals include at least one control terminal among a plurality of control terminals connected to the control unit. The plurality of second terminals include a ground terminal.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
An electronic component including: a semiconductor substrate; a dielectric layer adjacent a surface of the semiconductor substrate; a first internal electrode electrically connected to the semiconductor substrate; a second internal electrode adjacent a surface of the dielectric layer; an insulator layer adjacent the surface of the semiconductor substrate and covering the first internal electrode and the second internal electrode; a first extended electrode electrically connected to the first internal electrode; a second extended electrode electrically connected to the second internal electrode, wherein when viewed in a direction perpendicular to a plane of the semiconductor substrate, the second extended electrode is inside the second internal electrode; a first external electrode electrically connected to the first extended electrode; and a second external electrode electrically connected to the second extended electrode.
A radio frequency module including a mounting board, a first acoustic wave filter, a second acoustic wave filter, and a shield electrode. The second acoustic wave filter is disposed on the first acoustic wave filter. The first acoustic wave filter supports a first communication band, and the second acoustic wave filter supports a second communication band. The first acoustic wave filter includes a first support member and a first functional electrode. The second acoustic wave filter includes a second support member and a second functional electrode. The first functional electrode and the second functional electrode are located in a hollow space formed between the first support member and the second support member in a thickness direction of the mounting board, and face each other. The shield electrode is located in the hollow space and covers at least one of the first functional electrode and the second functional electrode.
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
In a multilayer substrate, a second multilayer body is positioned in a positive direction of a Z-axis of a first multilayer body. The second multilayer body is fixed to the first multilayer body via a first insulator layer bonded to a second insulator layer. Regions obtained by dividing the first multilayer body into three equal portions in the Z-axis direction are defined as a positive region, an intermediate region, and a negative region. A portion of one or more positive region first conductor layers is located in the positive region. An entirety of one or more intermediate region first conductor layers is located in the intermediate region. A thickness in the Z-axis direction of at least one of the one or more positive region first conductor layers is larger than the thickness in the Z-axis direction of the one or more intermediate region first conductor layers.
B32B 7/03 - Produits stratifiés caractérisés par la relation entre les couches; Produits stratifiés caractérisés par l’orientation relative des éléments caractéristiques entre les couches, ou par les valeurs relatives d’un paramètre mesurable entre les couches, c. à d. produits comprenant des couches ayant des propriétés physiqu; Produits stratifiés caractérisés par la jonction entre les couches concernant l’orientation des éléments caractéristiques
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 15/20 - Produits stratifiés composés essentiellement de métal comportant de l'aluminium ou du cuivre
A secondary battery is provided and includes an electrode assembly in which a plurality of positive electrodes and negative electrodes are laminated with a separator interposed between them, a plurality of current collecting tabs extending from each current collector of a plurality of the positive electrodes and negative electrodes, a conductive terminal joined to a plurality of the current collecting tabs, and a laminate film including the electrode assembly. A plurality of the positive electrodes and negative electrodes have a current collector and an active material layer formed on a surface of the current collector. The secondary battery further includes an insulating tape covering a joint portion between a plurality of the current collecting tabs and the terminal. The laminate film has a sealing portion, and the tape has a first edge portion at one end on a tip side of the terminal and a second edge portion at another end, and each of the first edge portion and the second edge portion has a plurality of irregularities.
H01M 50/186 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie Éléments de scellement caractérisés par la position des éléments de scellement
H01M 50/531 - Connexions d’électrodes dans un boîtier de batterie
H01M 50/586 - Moyens pour empêcher un usage ou une décharge indésirables pour empêcher les contacts incorrects à l’intérieur ou à l’extérieur des batteries à l’intérieur des batteries p.ex. les contacts incorrects des électrodes
An arithmetic circuit according to the present disclosure performs a signal value acquisition step of acquiring X-axis bending values, Y-axis bending values, and twisting values at respective one or more first times before an impact time identified in a time identification step and at respective one or more second times after the impact time; and a first calculation step of calculating one or more parameters indicating a state of an object to be measured at the impact time by multiplying a plurality of the X-axis bending values, a plurality of the Y-axis bending values, and a plurality of the twisting values acquired in the signal value acquisition step by a matrix.
A method for manufacturing a magnetic core includes a step of melting a raw material powder, comprising a soft magnetic metal powder and an agglomeration inhibitor, using laser irradiation or electron beam sweeping, and then solidifying the melt, thereby forming a three-dimensional magnetic composite.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
B22F 1/08 - Poudres métalliques caractérisées par des particules ayant une microstructure amorphe
B22F 1/12 - Poudres métalliques contenant des particules non métalliques
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 10/28 - Fusion sur lit de poudre, p.ex. fusion sélective par laser [FSL] ou fusion par faisceau d’électrons [EBM]
An acoustic resonator device is provided that includes a wafer having a wafer surface and a wafer conductor pattern on the wafer surface; a piezoelectric layer having front and back surfaces, a portion of the piezoelectric layer being over a cavity between the wafer and the piezoelectric layer, and the wafer conductor pattern; a device conductor pattern including a first metal layer including an interdigital transducer on the front surface of the piezoelectric layer and facing the wafer, and a second metal layer attached to a portion of the device conductor pattern to provide an electrical connection between the IDT and the wafer conductor pattern. The second metal layer is bonded to the wafer conductor pattern and the piezoelectric layer comprises openings extending therethrough.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
An antenna module includes a dielectric substrate, a ground electrode in the dielectric substrate, planar radiating elements, and a peripheral electrode. One radiating element faces the ground electrode. Another radiating element is between the one radiating element and the ground electrode. The peripheral electrode is in a layer of the dielectric substrate between the ground electrode and the other radiating element and electrically connects to the ground electrode. The other radiating element emits a radio wave in a frequency band lower than a frequency band of a radio wave emitted by the one radiating element. The peripheral electrode includes multiple planar electrodes stacked in a first direction in which the one radiating element faces the ground electrode. One planar electrode is in a layer between another planar electrode and the ground electrode. The size of the other planar electrode is less than the size of the one planar electrode.
H01Q 5/28 - Dispositions pour régler la polarisation ou la largeur de faisceau sur plusieurs gammes d’ondes différentes
H01Q 5/385 - Combinaison d’éléments alimentés et d’éléments passifs avec plusieurs éléments passifs
H01Q 9/28 - Antennes résonnantes avec alimentation intermédiaire entre les extrémités de l'antenne, p.ex. dipôle alimenté par le centre Éléments comportant deux surfaces coniques ayant le même axe et opposées par leurs sommets et alimentés par des lignes de transmission à deux conducteurs
54.
POWER SUPPLY DEVICE, DIAGNOSIS DEVICE, AND DIAGNOSIS METHOD
A power supply device is provided and includes a secondary battery, an electric circuit, and a measurer. The electric circuit performs charging or discharging of the secondary battery. The measurer measures a voltage and a current of the secondary battery. The power supply device further includes a calculator and a deriver. The calculator performs calculation of multiple degradation parameters of the secondary battery based on measurement values obtained by the measurer. The deriver derives a secondary use destination of the secondary battery based on the multiple degradation parameters obtained by the calculation performed by the calculator and respective degradation rates of the multiple degradation parameters set for each of secondary use destination candidates.
G01R 31/392 - Détermination du vieillissement ou de la dégradation de la batterie, p.ex. état de santé
G01R 31/3842 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p.ex. état de charge combinant des mesures de tension et de courant
Provided is a battery having excellent cycle characteristics in a low temperature environment. A battery includes components housed in an exterior can, the components including: an electrode wound body having a structure in which a band-shaped positive electrode including a positive-electrode foil and a positive-electrode active material layer and a band-shaped negative electrode including a negative-electrode foil and a negative-electrode active material layer are stacked with a separator interposed therebetween and wound around a central axis; a positive-electrode current collecting plate; a negative-electrode current collecting plate; and an electrolytic solution, in which the electrode foil has an electrode active material covered portion covered with the active material layer and an active material non-covered portion not covered with the active material layer, a surface on which the active material non-covered portion bent toward the central axis overlaps and the current collecting plate are bonded to each other, and the electrolytic solution contains 7.7 mass % or more and 11.5 mass % or less of fluoroethylene carbonate, 0.032 mass % or more and 0.048 mass % or less of lithium tetrafluoroborate, and lithium hexafluorophosphate.
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0587 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure enroulés, c. à d. des électrodes positives enroulées, des électrodes négatives enroulées et des séparateurs enroulés
56.
High Resolution Attenuator or Phase Shifter with Weighted Bits
Digital step attenuator (DSA) and digital phase shifter (DPS) multi-stage circuit architectures that provide for high resolution. Embodiments use a dithering approach to weight bit positions to provide a much finer resolution than the lowest-valued individual stage. Bit position weights for stages are determined so as to enable selection of combinations of n bit positions that provide a desired total attenuation or phase shift range while allowing utilization of the large number of states (2n) available to produce fractional intermediate steps of attenuation or phase shift. The fractional intermediate steps have a resolution finer than the lowest-valued stage. Bit position weights may be determined using a weighting function, including weightings determined from a linear series, a geometric series, a harmonic series, or alternating variants of such series. In some embodiments, at least one bit position has a fixed value that is not determined by the bit position weighting function.
H03H 7/25 - Affaiblisseurs indépendants de la fréquence comprenant un élément commandé par une variable électrique ou magnétique
H03H 7/20 - Déphaseurs à deux accès produisant un déphasage ajustable
H03H 11/20 - Déphaseurs à deux accès produisant un déphasage réglable
H03H 11/24 - Atténuateurs indépendants de la fréquence
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
57.
ULTRASONIC TRANSDUCER AND PARAMETRIC SPEAKER PROVIDED WITH SAME
According to the present invention, the dimension of the inside of at least one frame body (120) in the long-side direction is at least four times the dimension of the inside of the at least one frame body (120) in the short-side direction orthogonal to the long-side direction, and is greater than the minimum dimension (Lm) of at least one ultrasonic transducer (130) in the long-side direction. An average distance (L3) in the long-side direction of a gap between at least one end edge (120e) of an inner peripheral surface (120s) of the at least one frame body (120) in the long-side direction and at least one end edge (130e) of a surface (130s) on the frame body (120) side of the at least one ultrasonic transducer (130) in the long-side direction is 1.3 times or less the dimension (L2) of the inside of the at least one frame body (120) in the short-side direction.
Provided is a piezoelectric device and a piezoelectric filter capable of suppressing breakage of a piezoelectric layer. The present invention is provided with: a piezoelectric layer that has a thickness in a first direction, and has an upper surface that is one surface in the first direction and a lower surface that is the other surface in the first direction; a support member that is provided on the lower surface side of the piezoelectric layer; an upper electrode that is provided on the upper surface of the piezoelectric layer; a lower electrode that is provided on the lower surface of the piezoelectric layer, and has at least a portion thereof which faces the upper electrode; and a reinforcing film that is provided on at least one surface among the upper surface and the lower surface of the piezoelectric layer. The support member has a space in a region overlapping at least a part of the upper electrode and the lower electrode. The reinforcing film overlaps at least a portion of a boundary between a region overlapping the space in the first direction in a plan view and a region which does not overlap said space.
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
The present invention provides a paste for external electrodes, the paste being capable of improving the strength of a dried film. The paste for external electrodes is used for forming an external electrode of a multilayer ceramic electronic component, and comprises: an acrylic resin and an ethyl cellulose resin, which are at least partially copolymerized; a Cu powder; a glass powder; and a solvent. The ratio (SSA_Glass/SSA_Cu) of the BET specific surface area (SSA_Glass) of the glass powder to the BET specific surface area (SSA_Cu) of the Cu powder is 0.11 to 5.8 inclusive.
A multilayer ceramic capacitor according to the present disclosure is provided with: an external electrode; and a laminate which comprises a plurality of stacked dielectric layers and a plurality of stacked internal electrode layers. The external electrode comprises a plating layer and a base electrode layer. The base electrode layer contains glass. The glass contains an alkaline earth metal. With respect to the base electrode layer, if the mass proportion of the alkaline earth metal in the glass present in the central part in the thickness direction is taken as 100, the mass proportion of the alkaline earth metal in the glass present in the vicinity of the plating layer-side surface is not less than 90 but less than 100.
Provided is a piezoelectric device having a small thickness. The piezoelectric device comprises: a first piezoelectric layer that has a thickness in a first direction and has an upper surface that is one surface in the first direction and a lower surface that is the other surface in the first direction; a first support member provided on the lower surface side of the first piezoelectric layer; a first upper electrode provided on the upper surface of the first piezoelectric layer; a first lower electrode that is provided on the lower surface of the first piezoelectric layer and at least a part of which faces the first upper electrode; a second piezoelectric layer that has an upper surface that is one surface in the first direction and a lower surface that is the other surface in the first direction; a second support member provided on the lower surface side of the second piezoelectric layer; a second upper electrode provided on the upper surface of the second piezoelectric layer; a second lower electrode that is provided on the lower surface of the second piezoelectric layer and at least a part of which faces the second upper electrode; and an intermediate layer. The upper surface of the first piezoelectric layer and the upper surface of the second piezoelectric layer face each other in the first direction, and the intermediate layer is between the upper surface of the first piezoelectric layer and the upper surface of the second piezoelectric layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
This secondary battery evaluation system comprises: a battery pack (11) consisting of a plurality of secondary battery cells (111); a voltage detecting circuit (13) for detecting the voltage value across both ends of the battery pack (11); a current detecting circuit (12) for detecting the current value of the battery pack (11); a test secondary battery (190) consisting of at least one battery cell manufactured from the same materials as the secondary battery cells (111); and a test power supply circuit (19) for controlling charging and discharging of the test secondary battery (190). The test power supply circuit (19) simulates charging and discharging of the battery pack (11) by: setting a test charging voltage value and a test charging current value for the test secondary battery (190) on the basis of the voltage value across both ends of the battery pack (11) and the current value during charging, and charging the test secondary battery (190) using the test charging voltage value and the test charging current value; and setting a test discharging voltage value and a test discharging current value for the test secondary battery (190) on the basis of the voltage value across both ends of the battery pack (11) and the current value during discharging, and discharging the test secondary battery (190) using the test discharging voltage value and the test discharging current value. When measuring SOC-OCV data, the test power supply circuit (19) performs charging and discharging of the test secondary battery (190) independently of the drive of the battery pack (11) to acquire the SOC-OCV data of the test secondary battery (190).
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
63.
BIOLOGICAL SIGNAL MEASUREMENT SYSTEM, BIOLOGICAL SIGNAL MEASUREMENT DEVICE, DATA ANALYSIS DEVICE, BIOLOGICAL SIGNAL PROCESSING METHOD, BIOLOGICAL SIGNAL MEASUREMENT PROGRAM, AND DATA ANALYSIS PROGRAM
A biological signal measurement system (1) comprises a biological signal measurement device (10) and a data analysis device (20). The biological signal measurement device (10) is provided with: a sensor (14) that measures a biological signal based on a response to stimulation of a subject; and a wireless communication unit (11). The data analysis device (20) is provided with: a data processing unit (24) that performs predetermined data processing on the biological signal; and a wireless communication unit (23) that performs data communication with the wireless communication unit (11). The data analysis device (20) is provided with a stimulation signal generation unit (21) that generates a stimulation signal for giving stimulation. The biological signal measurement device (10) is provided with: a trigger signal acquisition unit (13) that acquires a trigger signal corresponding to the stimulation signal; and a synchronization sampling unit (15) that synchronously samples the trigger signal and the biological signal. The wireless communication unit (23) transmits the stimulation signal to the wireless communication unit (11). The wireless communication unit (11) receives the stimulation signal from the wireless communication unit (23). The wireless communication unit (11) transmits the synchronously sampled trigger signal and biological signal to the wireless communication unit (23). The wireless communication unit (23) receives the trigger signal and the biological signal from the wireless communication unit (11). The data processing unit (24) performs predetermined data processing on the basis of the received biological signal and trigger signal.
Provided is an elastic wave device capable of suppressing damage to an electrode. An elastic wave device (10) which has a piezoelectric layer (20) having a first main surface (20a) and a second main surface (20b) on the side thereof opposite the first main surface (20a), an upper electrode (31) provided on the first main surface (20a) of the piezoelectric layer (20), a lower electrode (32) provided on the second main surface (20b) of the piezoelectric layer (20), and a support member (13) facing the second main surface (20b) of the piezoelectric layer (20), wherein: an opening (21) that passes through the piezoelectric layer (20) in the thickness direction thereof is provided in a region of the piezoelectric layer (20) that overlaps the lower electrode (32) and does not overlap the upper electrode (31); and a superimposed electrode (33) is formed, from the same material as is the upper electrode (31), on the lower electrode (32) in a region that overlaps the opening (21).
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
Provided are an antenna substrate and an antenna device which can be applied to a dual polarization antenna corresponding to a plurality of frequency bands, and which can reduce the area required for disposing radiation electrodes. This antenna substrate is provided with: a dielectric substrate having a main surface; and first and second power supply lines and planar first to third radiation electrodes, which are on the main surface of the dielectric substrate. The size difference between the first and second radiation electrodes and the size difference between the first and third radiation electrodes are larger than the size difference between the second and third radiation electrodes. The first and second power supply lines are respectively connected to the first radiation electrode at first and second connection points which differ from each other. The first radiation electrode neighbors the second radiation electrode in a first direction which intersects, in the main surface, with the direction of a first line linking the first connection point and the center of the first radiation electrode, and neighbors the third radiation electrode in a second direction differing from the first direction and intersecting, in the main surface, with the direction of a second line linking the second connection point and the center of the first radiation electrode.
H01Q 13/08 - Terminaisons rayonnantes de lignes de transmission micro-ondes à deux conducteurs, p.ex. lignes coaxiales ou lignes micro-rayées
H01Q 1/38 - Forme structurale pour éléments rayonnants, p.ex. cône, spirale, parapluie formés par une couche conductrice sur un support isolant
H01Q 5/307 - Dispositions permettant un fonctionnement sur différentes gammes d’ondes Éléments rayonnants individuels ou couplés, chaque élément étant alimenté d’une façon non précisée
H01Q 21/24 - Combinaisons d'unités d'antennes polarisées dans des directions différentes pour émettre ou recevoir des ondes polarisées circulairement ou elliptiquement ou des ondes polarisées linéairement dans n'importe quelle direction
A blower of a CPAP device is housed inside a main body case of a CPAP device. The blower is roughly divided into a fan unit housing a fan therein, and a delivery tube, through which air sent from the fan passes. In the main body case, a first support member, a second support member, and a third support member are interposed between the main body case and the fan unit to support the fan unit. When viewed from a rotation axis of the fan, the first support member and the second support member are disposed to pinch the blower on the side of a connection point between the fan unit and the delivery tube relative to the rotation axis, and the third support member is located on the opposite side to the connection point between the fan unit and the delivery tube relative to the rotation axis.
Provided is a battery pack capable of improving impact resistance without complicating the structure. A battery pack according to an embodiment of the present technology includes a battery module including a battery and a battery holder that holds the battery, and a battery case that houses the battery module. The battery module has a first outer surface and a second outer surface facing the first outer surface. The battery case has a first inner surface disposed facing the first outer surface and warped toward the first outer surface, and a second inner surface disposed facing the second outer surface and warped toward the second outer surface. The battery module is supported on the first inner surface and the second inner surface by warpage of the first inner surface and warpage of the second inner surface.
H01M 50/242 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par les propriétés physiques des boîtiers ou des bâtis, p.ex. dimensions adaptés pour protéger les batteries contre les vibrations, les collisions ou le gonflement
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/244 - Boîtiers secondaires; Bâtis; Dispositifs de suspension; Dispositifs de manutention; Supports caractérisés par leur procédé de montage
H01M 50/284 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports comprenant l’insertion de cartes de circuits, p.ex. de cartes de circuits imprimés
A multilayer ceramic capacitor includes an element body portion including dielectric layers and internal electrode layers laminated in a thickness direction, and external electrodes respectively on first and second end surfaces and electrically connected to the internal electrode layers. Each of the internal electrode layers includes an opposing portion opposed to another internal electrode layer, and a lead-out portion connected to the opposing portion and extending to the first or second end surface, a width of the opposing portion is larger than a width of the lead-out portion in the width direction, and a relationship of C1>C2 is satisfied when a continuity of an end portion of the opposing portion in the width direction is defined as C1 and a continuity of an end portion of the lead-out portion in the width direction is defined as C2.
A multilayer ceramic capacitor includes an element body portion including dielectric layers and internal electrode layers including Ni, and external electrodes. In each internal electrode layer, a width of an opposing portion is larger than a width of a lead-out portion. The element body portion includes side margin portions extending from both end portions of the opposing portion to first and second side surfaces, through a central portion in a length direction, and parallel or substantially parallel to a thickness direction and a width direction. A dielectric layer between adjacent internal electrode layers in the thickness direction includes grains including pores. Each of the side margin portions includes a dielectric including grains that do not include pores.
A multilayer ceramic capacitor includes an element body portion including internal electrode layers, and first and second external electrodes. In the internal electrode layers, a width of an opposing portion is larger than a width of a lead-out portion, each of the first and second external electrodes includes a Cu layer on the element body portion including first and second layer portions. The first layer portion has a higher Cu content than the second layer portion, the second layer portion has a higher glass content than the first layer portion. The Cu in the first layer portion is continuous to connect lead-out portions adjacent to each other. In a cross section of the second layer portion extending through a central portion in the width direction and parallel to the thickness and length directions, the glass occupies about 25% or more of an area of the second layer portion.
Dielectric layers include outer dielectric layers and inner dielectric layers. The outer dielectric layers are located between a first principal surface and an internal electrode layer located closest to the first principal surface in a thickness direction and between a second principal surface and an internal electrode layer located closest to the second principal surface in the thickness direction. The inner dielectric layers are located between internal electrode layers adjacent to each other in the thickness direction. In an element body portion, side margin portions, which are located in a width direction between a first side surface and a plurality of internal electrode layers and between a second side surface and a plurality of internal electrode layers, have a higher Mn content than the inner dielectric layers.
A dimension in a longitudinal direction inside one or more frame bodies is equal to or greater than four times a dimension in a short direction orthogonal or substantially orthogonal to the longitudinal direction inside the one or more frame bodies and is greater than a minimum dimension in the longitudinal direction of one or more ultrasonic vibrators. An average length in the longitudinal direction of a gap between an edge on at least one side in the longitudinal direction of an inner circumferential surface of the one or more frame bodies and an edge on the at least one side in the longitudinal direction of a surface of the one or more ultrasonic vibrators on a frame body side is equal to or less than about 1.3 times a dimension in the short direction inside the one or more frame bodies.
An acoustic wave device includes a piezoelectric layer including first and second major surfaces, first and second excitation electrodes respectively on the first and second major surfaces, first and second wiring electrodes respectively coupled to the first and second excitation electrodes, and an insulating layer on the second major surface and covering at least a portion of the second excitation electrode and the second wiring electrode. The piezoelectric layer is sandwiched between the first and second excitation electrodes. A region in the piezoelectric layer sandwiched between the first and second excitation electrodes defines an excitation region. An acoustic reflector is provided within the insulating layer and overlaps the excitation region. The first and second wiring electrodes do not overlap the acoustic reflector. Material arrangements of the first and second excitation electrodes are the same, and material arrangements of the first and second wiring electrodes are the same.
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A battery pack is provided and includes a plurality of cylindrical cells arranged in a manner that electrode terminals face the same direction, and an embedded member arranged between a plurality of the cylindrical cells. The embedded member includes a container, and a heat absorbing agent and gas accommodated in the container. The container is provided with a projecting portion arranged between two adjacent ones of the cylindrical cells and extending in a longitudinal direction of the cylindrical cell as viewed from a longitudinal direction of the cylindrical cell. The projecting portion includes a heat absorbing agent accommodation portion in which a heat absorbing agent is accommodated and a gas accommodation portion in which gas is accommodated. The gas accommodation portion is arranged at a tip portion of the projecting portion and is in contact with each of two adjacent ones of the cylindrical cells.
H01M 10/52 - Enlèvement des gaz situés à l'intérieur de l'élément secondaire, p.ex. par absorption
H01M 10/653 - Moyens de commande de la température associés de façon structurelle avec les éléments caractérisés par des matériaux électriquement isolants ou thermiquement conducteurs
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/291 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par des éléments d’espacement ou des moyens de positionnement dans les racks, les cadres ou les blocs caractérisés par leur forme
75.
IMPEDANCE DETECTION CIRCUIT, IMPEDANCE CONTROL CIRCUIT, AND DOHERTY AMPLIFIER CIRCUIT
An impedance detection circuit includes: a first detector that detects a first voltage amplitude at an end of an inverter circuit having the end to which a radio frequency signal is input and having a different end from which a signal is output; a second detector that detects a second voltage amplitude of the different end of the inverter circuit; and a phase difference detector that detects a phase difference between a phase of a voltage across the end of the inverter circuit and a phase of a voltage across the different end of the inverter circuit. An absolute value of a product of diagonal elements of a dependent parameter for the inverter circuit is smaller than an absolute value of a product of off-diagonal elements.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
G01R 25/00 - Dispositions pour procéder aux mesures de l'angle de phase entre une tension et un courant ou entre des tensions ou des courants
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p.ex. câble, ligne de transport de l'énergie
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
Integrated circuit structures and methods for a high precision die-to-wafer bonding technology for fabricating 3-D stacked IC dies. Embodiments include precise alignment structures and methods, and also provide fast fabrication techniques using simultaneous multi-die picking and placing of individual dies from a die-source wafer onto a recipient wafer. Stacked-die yields are improved over wafer-to-wafer bonding technologies by enabling testing and selection of known-good die-source dies before bonding onto the recipient wafer, and by providing optional physical alignment structures on the recipient wafer and/or die-source wafer. Embodiments enable, for example, fabrication of high-power, high-performance devices on ICs formed on GaAs or GaN die-source wafers and bonding individual die-source IC dies to ICs that include CMOS control and driver circuitry formed on an SOI recipient wafer. The resulting 3-D stacked IC dies may offer advantages that include scalability, reliability, and form-factor reduction.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
A communication module able to have a favorable isolation characteristic is provided. The communication module includes a directional coupler inserted in a path extending toward an antenna from an amplifying part that amplifies a signal being input and a stub connected to the path. The directional coupler includes a main line and a sub line that couples with the main line and picks up a signal flowing through the main line. One end portion of the stub is connected to part of the path that is not the main line, another end portion of the stub is left open, and an extending direction of the stub from the one end portion to the other end portion is a direction moving away from the directional coupler.
H04B 1/18 - Circuits d'entrée, p.ex. pour le couplage à une antenne ou à une ligne de transmission
H01P 5/18 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p.ex. coupleurs directionnels
An acoustic wave device includes a support, a piezoelectric layer on the support, an IDT electrode on the piezoelectric layer and including busbars and electrode fingers, and mass-added films on the electrode fingers. An acoustic reflection portion is provided in the support and overlaps at least a portion of the IDT electrode. d/p is about 0.5 or less. When viewed in an electrode finger orthogonal direction, a region in which the electrode fingers adjacent to each other overlap each other is an intersecting region including a central region, and first and second edge regions. At least a portion of the mass-added films overlaps the central region in plan view.
An electronic component including: a semiconductor substrate; an insulator layer on a first surface of the semiconductor substrate; a plurality of conductor layers on and/or in the insulator layer; a dielectric layer on the first surface of the semiconductor substrate; a lower surface electrode on a second surface of the semiconductor substrate, wherein: at least a first conductor layer of the plurality of conductor layers is a wiring pattern, at least a second conductor layer of the plurality of conductor layers is a plate electrode paired with the semiconductor substrate or the lower surface electrode across the dielectric layer, and the semiconductor substrate has a first region that includes the dielectric layer and the plate electrode and a second region other than the first region; and a conductor portion with higher conductivity than the semiconductor substrate in the first region at a higher ratio than in the second region.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
80.
METHODS, APPARATUSES, INTEGRATED CIRCUITS, AND PRINTED CIRCUIT BOARDS FOR POWER CONVERSION WITH REDUCED PARASITICS
An apparatus may include a printed circuit board including an integrated circuit including buck converter circuitry and an inductor coupled to the integrated circuit.
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
An acoustic wave device includes first and second acoustic wave resonators, each including a piezoelectric layer and a functional electrode, and an acoustic coupling layer laminated between the piezoelectric layer of each of the first and second acoustic wave resonators. Each of the functional electrodes of the first and second acoustic wave resonators includes at least one pair of electrode fingers. In each of the first and second acoustic wave resonators, when a thickness of the piezoelectric layer is defined as d and a center-to-center distance of the electrode fingers adjacent to each other is defined as p, d/p is about 0.5 or smaller. The first and second acoustic wave resonators face each other across the acoustic coupling layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A chip-type electronic component that includes: a ceramic body 20 having a volume V of 0.12 mm3 or less, wherein the ceramic body comprises: a perovskite compound containing Ti and Ba, and at least Si, and wherein an Si content in the ceramic body 20 satisfies: 0 mol %<[Si]≤0.62 mol %, where [Si] is the Si content (mol %) per 100 mol % of a total content of elements in the ceramic body excluding oxygen.
H01C 7/02 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant à coefficient de température positif
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support in a first direction, a functional electrode on the piezoelectric layer, and a reinforcement film on the piezoelectric layer. The support includes a space portion that opens on a side of the piezoelectric layer, and an extended passage extending farther toward an outer side than an edge of the space portion in a second direction intersecting the first direction. A through-hole is provided at a position not overlapping the functional electrode in plan view in the first direction, communicates with the extended passage, and penetrates the piezoelectric layer. The reinforcement film is provided in a region between the through-hole and the space portion and overlaps at least a portion of a region where the piezoelectric layer and the extended passage overlap each other in the plan view.
A film capacitor including: a capacitor element including a laminate of a dielectric film and an internal electrode, a first end surface electrode on a first end surface of the laminate, and a second end surface electrode on a second end surface of the laminate; a laminate film including a covering part covering the capacitor element, and a flange extending from an outer edge of the covering part; a first terminal electrode connected to the first end surface electrode inside the laminate film and exposed outside of the laminate film, and a second terminal electrode connected to the second end surface electrode inside the laminate film and exposed outside of the laminate film; and a fixing member including a main body disposed along the capacitor element inside the laminate film, and a fixing part extending from the main body and exposed to the outside of the laminate film.
H01G 4/236 - Bornes pour traverser l'enveloppe, c.à d. traversée d'entrée
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu; Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
85.
NEGATIVE ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND BATTERY
A negative electrode includes an active material layer and an inorganic solid electrolyte layer. The inorganic solid electrolyte layer is on the active material layer. The active material layer includes, in order from a side far from the inorganic solid electrolyte layer, a lithium metal layer, an intermediate layer, and a surface layer. As constituent elements, the intermediate layer includes lithium and oxygen, the surface layer includes lithium, oxygen, and carbon, and the inorganic solid electrolyte layer includes a characteristic element different from lithium, oxygen, and carbon. In an element analysis result based on XPS, a ratio of an abundance of lithium to an abundance of carbon is greater than 2 at any depth within a range from a first intersection to a second intersection. The first intersection is where a characteristic element spectrum intersects a carbon spectrum. The second intersection is where a lithium spectrum intersects an oxygen spectrum.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p.ex. phosphates, silicates ou borates
The present invention provides a multilayer ceramic capacitor in which it is possible to impart moisture resistance to a terminal electrode, while maintaining good adhesion between the terminal electrode and a ceramic element. Disclosed is a multilayer ceramic capacitor 1 wherein: an external electrode film 22 contains at least a first glass which is composed of at least one of a barium-boron-silicon-based glass, a strontium-boron-silicon-based glass and a barium-strontium-boron-silicon-based glass, and a second glass which is composed of a bismuth-based glass; the first glass and the second glass form glass domains in the external electrode film 22; and if those exposed in the surface 42 of the external electrode film 22 but not exposed in the interface 40 between the external electrode film 22 and a ceramic element 2 among the glass domains are defined as first glass domains 52, and those not exposed in the surface 42 of the external electrode film 22 but exposed in the interface 40 between the external electrode film 22 and the ceramic element 2 are defined as second glass domains 50, the concentration ratio of bismuth to silicon is higher in portions of the first glass domains 52 exposed in the surface 42 of the external electrode film 22 than in portions of the second glass domains 50 exposed in the interface 40 between the external electrode film 22 and the ceramic element 2.
A wireless power supply system (10) comprises: a power transmission device (30) comprising a wireless power transmission circuit including a power transmission coil (34) configured using a first annular conductor; and a power reception device (20) comprising a wireless power reception circuit including a power reception coil (22) configured using a second annular conductor. The power transmission coil (34) and the power reception coil (22) are electromagnetically coupled to perform wireless power supply. The power reception device (20) comprises a power reception device housing (200) which has a complicated outer shape having a plurality of vertices exceeding eight vertices and in which the power reception coil (22) is disposed. The power transmission device (30) comprises a power transmission device housing (H30) in which a recessed housing part (300) having a size capable of accommodating the power reception device housing (200) is formed. The recessed housing part (300) comprises a bottom surface (BT300) and a side surface (F301) installed upright from the bottom surface (BT300). The power reception device housing (200) makes a point contact or a line contact in a plurality of postures at two or more locations on the side surface in a first direction that is the normal to the bottom surface or at one or more locations on each of the bottom surface and the side surface. The first annular conductor has a spiral shape having a first opening, and is disposed in a position where the recessed housing part (300) is disposed in the first opening, and between the bottom surface and the side of the upper end of the power reception device housing (200) in the housed state or the upper end of the recessed housing part (300) that is closer to the bottom surface (BT300). The power reception device housing (200) is housed in the recessed housing part (300) such that a first central axis of the first annular conductor passes through a second opening of the second annular conductor.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
A substrate 1 for manufacturing a capacitor element includes: a substrate layer 10 divided into a product region R1 constituting a capacitor element and a region R2 outside product surrounding at least a part of the product region R1; and a sealing layer 20 provided so as to cover at least one major surface of the substrate layer 10. The product region R1 includes an anode plate 11 having a porous part 11B on at least one major surface of the core part 11A, a dielectric layer 13 provided on a surface of the porous part 11B, and a cathode layer 12 provided on a surface of the dielectric layer 13. The region R2 outside product includes the core part 11A of the anode plate 11. A penetration part 30 penetrating the anode plate 11 in a thickness direction is provided in at least a part of a region located at an outer edge of the substrate layer 10 in the region R2 outside product. At least a part of the penetration part 30 is filled with a filling member 40.
This measurement system is provided with: a first measurement device provided with a first sensor that outputs a first measurement signal and a first wireless communication unit; and a second measurement device provided with a second sensor that outputs a second measurement signal and a second wireless communication unit. The first measurement device is provided with a first synchronous sampling unit that synchronously samples a trigger signal received by the first wireless communication unit and the first measurement signal and outputs a first synchronized trigger signal and a first synchronized measurement signal, respectively. The first wireless communication unit transmits a first signal pair including the first synchronized trigger signal and the first synchronized measurement signal. The second measurement device is provided with a second synchronous sampling unit that synchronously samples a trigger signal received by the second wireless communication unit and the second measurement signal and outputs a second synchronized trigger signal and a second synchronized measurement signal, respectively. The second wireless communication unit transmits a second signal pair including the second synchronized trigger signal and the second synchronized measurement signal.
Provided are a substrate connection structure that facilitates adjustment of the impedance of a transmission line, an antenna substrate, and a display device. This substrate connection structure comprises a first substrate, a second substrate that partially faces the first substrate when viewed from the thickness direction of the first substrate, and a transmission line that spans the first substrate and the second substrate. The transmission line includes: a first transmission line on a first surface of the first substrate facing the second substrate; a second transmission line on a second surface of the second substrate facing the first substrate; a through-hole wire in a position not overlapping the second transmission line when viewed from the thickness direction of the first substrate; and a connection conductor disposed on the first surface and connected to the through-hole wire. The first transmission line extends from the connection conductor toward the second transmission line, and is connected to the second transmission line. In a second direction orthogonal to a first direction in which the first transmission line extends from the connection conductor toward the second transmission line when viewed from the thickness direction of the first substrate, the size of the first transmission line is smaller than the size of the connection conductor.
Provided is a multilayer ceramic electronic component wherein excessive outflow of a joining material can be appropriately suppressed and the occurrence of solder splashing can be suppressed. A multilayer ceramic capacitor 1 comprises: a multilayer ceramic capacitor body 2; metal terminals (100A, 100B) that are connected to external electrodes (40A, 40B) via a bonding material 5; and an outer packaging material 3 that covers the multilayer ceramic capacitor body 2, etc. The metal terminals (100A, 100B) have bonding surfaces (110A1, 110B1) that bond to the bonding material 5, and contact surfaces (CS1, CS2) that are in contact with the exterior material 3. The contact surfaces (CS1, CS2) comprise the surfaces of outermost surface plating films (100Ab2, 100Bb2) and the surfaces of intermetallic compounds (100Ab3, 100Bb3), which are less wettable than the aforementioned surfaces.
A detection system 101 for a diffraction pattern of a security tag comprises: a laser light source 110 for irradiating a security tag 100 with a laser beam 111; and an imaging element 120 for imaging a diffraction pattern generated by the security tag 100 irradiated with the laser beam 111.
G06K 7/12 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire utilisant une longueur d'onde choisie, p.ex. pour lire des marques rouges et ignorer des marques bleues
G06K 19/16 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p.ex. forme, nature, code utilisant des marquages de différentes sortes sur le même support d'enregistrement, p.ex. un marquage étant lu optiquement et l'autre par des moyens magnétiques au moins une sorte de marquage étant utilisée pour l'authentification, p.ex. de cartes de crédit ou de cartes d'identité le marquage étant lu par irradiation le marquage étant constitué par un hologramme ou un réseau de diffraction
This electronic component (10) is provided with an element body (20) and a glass film (51). The glass film (51) covers an outer surface (21) of the element body (20). The material of the glass film (51) contains an organic silane compound. The outer surface (21) of the element body (20) has a recess section (24) which is a place recessed with respect to the surroundings thereof. The arithmetic average roughness of the portion of an outer surface (53) of the glass film (51) that covers the recess (24) is 3 to 200 nm.
H01C 7/04 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant à coefficient de température négatif
H01F 17/02 - Inductances fixes du type pour signaux sans noyau magnétique
Provided is a multilayer ceramic capacitor capable of achieving improved low impedance characteristics. This multilayer ceramic capacitor comprises: a laminate 12 having a first surface 12a and a second surface 12b opposite to each other in a lamination direction x, a third surface 12c and a fourth surface 12d opposite to each other in a first direction y orthogonal to the lamination direction x, and a fifth surface 12e and a sixth surface 12f opposite to each other in a second direction z orthogonal to the lamination direction x and the first direction y; a first external electrode 30a disposed on the third surface 12c of the laminate 12; a second external electrode 30b disposed on the fourth surface 12d of the laminate 12; a third external electrode 30c disposed on the fifth surface 12e of the laminate 12; and a fourth external electrode 30d disposed on the sixth surface 12f of the laminate 12. The laminate 12 includes an inner layer part 18 and two outer layer parts 20a and 20b disposed so as to sandwich the inner layer part 18 in the lamination direction x. The inner layer part 18 includes an inner layer dielectric layer 14a, a first internal electrode 16a having one end in the first direction y exposed on the third surface 12c and the fourth surface 12d, and a second internal electrode 16b having one end in the second direction z exposed on the fifth surface 12e and the sixth surface 12f. The multilayer ceramic capacitor is characterized in that: the second internal electrode 16b includes a first region 40 disposed inside the laminate 12, and a second region 42 extending from the first region 40 to the fifth surface 12e and the sixth surface 12f; and protrusion parts 50a, 50b are disposed on at least one of end edges positioned facing each other in the first direction y of the second region 42.
Provided is a multilayer ceramic capacitor capable of suppressing deterioration of insulation resistance due to moisture intrusion. This multilayer ceramic capacitor is characterized by comprising: a laminate 12 having a first surface 12a and a second surface 12b opposite to each other in the lamination direction x, a third surface 12c and a fourth surface 12d opposite to each other in a first direction y orthogonal to the lamination direction x, and a fifth surface 12e and a sixth surface 12f opposite to each other in a second direction z orthogonal to the lamination direction x and to the first direction y; a first external electrode 30a disposed on the third surface 12c of the laminate 12; a second external electrode 30b disposed on the fourth surface 12d of the laminate 12; a third external electrode 30c disposed on the fifth surface 12e of the laminate 12; and a fourth external electrode 30d disposed on the sixth surface 12f of the laminate 12, the laminate 12 comprising an internal layer part 18 and two outer layer parts 20a and 20b disposed so as to sandwich the inner layer part 18 in the lamination direction x, wherein the inner layer part 18 includes an inner layer dielectric layer 14a, a first internal electrode 16a having one end in the first direction y exposed on the third surface 12c and the fourth surface 12d, and a second internal electrode 16b having one end in the second direction z exposed on the fifth surface 12e and the sixth surface 12f, the second internal electrode 16b including a first region 40 disposed inside the laminate 12, and a second region 42 extending from the first region 40 to the fifth surface 12e and the sixth surface 12f, wherein the thickness of the second region 42 in the lamination direction x is less than the thickness of the first region 40 in the lamination direction x.
A work history information collection device (400) comprises an acquisition unit (4011) that acquires format information containing required details for a work history document, a collection unit (4012) that collects work history information related to the work history of a user, and a storage unit that stores a natural language processing algorithm (430). The collection unit (4012) uses the natural language processing algorithm stored in the storage unit (403) to have conversation with the user and collect work history information corresponding to the required details.
This method for producing a composite material composition involves: a step (S1) for treating the surface of boron nitride-based powder (1) so that the amount of basic groups on the surface of the boron nitride-based powder (1) increases; a step (S2) for mixing a silane coupling agent (2) with the surface-treated boron nitride-based powder (1) so that the silane coupling agent (2) is adsorbed onto the treated surface; and a step (S4) for mixing a resin (3) with the boron nitride-based powder (1) having the silane coupling agent (2) adsorbed onto the treated surface thereof.
The present invention reduces high-frequency noise. This semiconductor module (100) is provided with a semiconductor element (1), a power supply path (3), a first inductor (L1), a capacitor (C1), and a second inductor (L2). The semiconductor element (1) has a power supply terminal (14). The power supply path (3) is connected to the power supply terminal (14) of the semiconductor element (1). The first inductor (L1) is provided in the power supply path (3). The capacitor (C1) has a first end and a second end. In the capacitor (C1), the first end is connected to the power supply path (3), and the second end is connected to the ground. The second inductor (L2) is provided in the power supply path (3) and is connected between the first inductor (L1) and the power supply terminal (14). The first inductor (L1) and the second inductor (L2) are arranged so that a magnetic field generated by the first inductor (L1) and a magnetic field generated by the second inductor (L2) are coupled.
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01F 17/00 - Inductances fixes du type pour signaux
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H03H 7/09 - Filtres comportant une inductance mutuelle
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
99.
SECURITY TAG DIFFRACTION-PATTERN DETECTION SYSTEM AND SECURITY TAG DISCRIMINATION METHOD
A security tag diffraction-pattern detection system 101 includes: a laser light source 110 that projects a laser beam 111 onto a security tag 100; and imaging elements 120 that image a diffraction pattern generated by the security tag 100 which was irradiated with the laser beam 111.
G06K 7/12 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire utilisant une longueur d'onde choisie, p.ex. pour lire des marques rouges et ignorer des marques bleues
G06K 19/16 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p.ex. forme, nature, code utilisant des marquages de différentes sortes sur le même support d'enregistrement, p.ex. un marquage étant lu optiquement et l'autre par des moyens magnétiques au moins une sorte de marquage étant utilisée pour l'authentification, p.ex. de cartes de crédit ou de cartes d'identité le marquage étant lu par irradiation le marquage étant constitué par un hologramme ou un réseau de diffraction
G07D 7/12 - Lumière visible, rayonnement infrarouge ou ultraviolet
This composite component has at least one electronic component incorporated therein and comprises: a Si base layer that has a first main surface and a second main surface facing the first main surface; a rewiring layer that is disposed on the first main surface; a through-Si via that is electrically connected to the rewiring layer and that penetrates the Si base layer; an electronic component that is electrically connected to the through-Si via and is disposed on the second main surface; a side wall portion that surrounds the electronic component and that is disposed so as to form a recess together with the Si base layer; and a resin sealing portion that seals the electronic component.
H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 23/14 - Supports, p.ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
