Method and system are provided for reducing the AWV table size for phased-array antenna. In one novel aspect, the AWV table is decomposed to a combination of a first AWV table and a second AWV table, with a combined size smaller than the size of the AWV table. In one novel aspect, a group of decomposable AWVs are identified and each decomposed into a decomposed first AWVs and a decomposed second AWVs. In one embodiment, the decomposable weights W that are decomposed into Wh being a function of both elevation θ and azimuth (φ and Wv being a function of elevation θ only. In one novel aspect, the AWV table for a phased-array antenna with N antenna elements with Mv weights in a vertical direction and Mh weights in a horizontal direction is decomposed into a first AWV table and a second AWV table with a combined size of N*(Mv+Mh).
H01Q 3/36 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables
2.
SYSTEM AND METHOD FOR EFFICIENT ANTENNA WEIGHT VECTOR TABLES WITHIN PHASED-ARRAY ANTENNAS
The method and system are provided for reducing the AWV table size for phased-array antenna, the AWV table is decomposed to a combination of a first AWV table and a second AWV table, with a combined size smaller than the size of the AWV table, a group of decomposable AWVs are identified and each decomposed into a decomposed first AWVs and a decomposed second AWVs, the decomposable weights W that are decomposed into Wh are a function of both elevation θ and Wv is a function of elevation θ and azimuth φ and Wv is a function of elevation θ only, and the AWV table for a phased-array antenna with N antenna elements with Mv weights in a vertical direction and Mh weights in a horizontal direction is decomposed into a first AWV table and a second AWV table with a combined size of N*(Mv+Mh).
H01Q 3/26 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante
H01Q 3/34 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques
H04B 7/06 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.
The examples set forth herein involve inkjet printing one or more layers on a multilayer ceramic base. In some examples, the multilayer ceramic base is fired in a first firing process before one or more inkjet printed layers are printed on the multilayer ceramic base to form a combination package comprising the multilayer ceramic base and the one or more inkjet printed layers. In further examples, the combination package is fired in a second firing process.
The examples set forth herein involve inkjet printing one or more layers on a multilayer ceramic base. In some examples, the multilayer ceramic base is fired in a first firing process before one or more inkjet printed layers are printed on the multilayer ceramic base to form a combination package comprising the multilayer ceramic base and the one or more inkjet printed layers. In further examples, the combination package is fired in a second firing process.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.
Radio Frequency (RF) circuit (amplifiers, mixer, etc.) design with RFIC, e.g., implemented in CMOS, CaAs, SiGe, or other silicon processes, suffers performance variations (gain phase, frequency, bandwidth, nonlinearity) due to wafer process variations, temperature changes, and supply voltage changes, and random variations. In this invention, methods are proposed to precisely calibrate the bias current of all active devices in the system, and to precisely calibrate the gain of individual path leading to each amplifiers such that the same Pout is achieved for all antenna elements in the system.
H04B 17/11 - SurveillanceTests d’émetteurs pour l’étalonnage
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
Radio Frequency (RF) circuit (amplifiers, mixer, etc.) design with RFIC, e.g., implemented in CMOS, CaAs, SiGe, or other silicon processes, suffers performance variations (gain phase, frequency, bandwidth, nonlinearity) due to wafer process variations, temperature changes, and supply voltage changes, and random variations. In this invention, methods are proposed to precisely calibrate the bias current of all active devices in the system, and to precisely calibrate the gain of individual path leading to each amplifiers such that the same Pout is achieved for all antenna elements in the system.
H01Q 3/34 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.
A phased array antenna includes multiple antenna elements where each antenna element is an antenna apparatus that includes an antenna integrated with a filter. Each antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. Each antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus. The scan volume of the phased array antenna is dependent on at least one physical dimension of the filter of the antenna apparatus.
A phased array antenna includes multiple antenna elements where each antenna element is an antenna apparatus that includes an antenna integrated with a filter. Each antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. Each antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus. The scan volume of the phased array antenna is dependent on at least one physical dimension of the filter of the antenna apparatus.
A ceramic feedthrough assembly has a feedthrough interface sleeve brazed to a ceramic feedthrough body and a housing interface sleeve brazed to the feedthrough interface sleeve. The housing interface sleeve is configured to be integrated within an electronic device and welded to a metal housing to form a hermetically sealed electronic device. The ceramic feedthrough has at least one embedded electrical conductor extending from a first location on the ceramic feedthrough body to a second location on the ceramic feedthrough body. The feedthrough interface sleeve is positioned around the ceramic feedthrough body between the first location and the second location and brazed to the wrap-around metallization. When the metal housing is welded to the housing interface sleeve, the ceramic feedthrough assembly facilitates connection to an electronic circuit hermetically sealed in the electronic device with the metal housing.
A ceramic feedthrough assembly has a feedthrough interface sleeve brazed to a ceramic feedthrough body and a housing interface sleeve brazed to the feedthrough interface sleeve. The housing interface sleeve is configured to be integrated within an electronic device and welded to a metal housing to form a hermetically sealed electronic device. The ceramic feedthrough has at least one embedded electrical conductor extending from a first location on the ceramic feedthrough body to a second location on the ceramic feedthrough body. The feedthrough interface sleeve is positioned around the ceramic feedthrough body between the first location and the second location and brazed to the wrap-around metallization. When the metal housing is welded to the housing interface sleeve, the ceramic feedthrough assembly facilitates connection to an electronic circuit hermetically sealed in the electronic device with the metal housing.
A power amplifier (PA) linearization technique with a wider linearized power range is proposed. Proposed two types of linearizers with cross-coupled PMOS and NMOS configuration. The idea is to use a complimentary device compared with the PA core device, and the behavior of Cgs of the linearizer are also complimentary to the PA itself. In the other words, the overall Cgs of the PA with the linearizer would be constant without leading to non-linear waveform. Both linearizers can effectively compensate not only AMAM but also AMPM. First type of linearizer can be integrated with PA cores, and second type of linearizer can be used in the IMN. Both linearizers have effective IM3 reduction in different corner.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.
H03F 1/48 - Modifications des amplificateurs pour augmenter la bande passante des amplificateurs apériodiques
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
17.
PERIPHERAL FOR AMPLIFIER LINEARIZATION WITH COMPLEMENTARY COMPENSATION
A power amplifier (PA) linearization technique with a wider linearized power range is proposed. Proposed two types of linearizers with cross-coupled PMOS and NMOS configuration. The idea is to use a complimentary device compared with the PA core device, and the behavior of Cgs of the linearizer are also complimentary to the PA itself. In other words, the overall Cgs of the PA with the linearizer would be constant without leading to non-linear waveform. Both linearizers can effectively compensate not only AMAM but also AMPM. First type of linearizer can be integrated with PA cores, and second type of linearizer can be used in the IMN. Both linearizers have effective IM3 reduction in different corners.
A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.
San Diego State University Research Foundation (USA)
Kyocera International, Inc. (USA)
Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. (Allemagne)
Inventeur(s)
Engin, Arif Ege
Aguirre, Gerardo
Lang, Klaus-Dieter
Ndip, Ivan
Abrégé
Embodiments described herein are directed to methods and apparatus for power distribution. The apparatus can include a power distribution network for a plurality of integrated circuits (IC). According to embodiments, the power distribution network includes a plurality of overlapping power/ground (PG) plane segments and one or more non-overlapping PG (no-PG) plane segments. Each overlapping-PG plane segment is separated from another overlapping-PG plane segment by at least one no-PG plane segment. The no-PG plane segments can include at least one of a multilayered power (P) plane segment with no ground reference of any PG plane and a multilayered ground (G) plane segment with no power reference of any PG plane.
A phased array antenna includes multiple antenna elements where each antenna element is an antenna apparatus that includes an antenna integrated with a filter. Each antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. Each antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus. The scan volume of the phased array antenna is dependent on at least one physical dimension of the filter of the antenna apparatus.
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of planar resonators where at least some of the resonators are each enclosed in a metal cavity and at least one planar resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the planar radiator element and the position of the planar radiator element within the antenna apparatus.
An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of planar resonators where at least some of the resonators are each enclosed in a metal cavity and at least one planar resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the planar radiator element and the position of the planar radiator element within the antenna apparatus.
A phased array antenna includes multiple antenna elements where each antenna element is an antenna apparatus that includes an antenna integrated with a filter. Each antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. Each antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus. The scan volume of the phased array antenna is dependent on at least one physical dimension of the filter of the antenna apparatus.
H01Q 3/26 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la phase relative ou l’amplitude relative et l’énergie d’excitation entre plusieurs éléments rayonnants actifsDispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante
A semiconductor packaging structure is disclosed. The semiconductor packaging structure includes a heat spreader, a set of at least two leads, and a ceramic insulator. The heat spreader has a thermal conductivity greater than 300 W/m*K. The ceramic insulator has a mean flexural strength that is greater than 500 MPa and so better able to withstand the thermal expansion mismatch between it and the heat spreader. The heat spreader, the set of at least two leads, and the ceramic insulator may also be part of a semiconductor package along with at least one semiconductor device, a wire bond, and a ceramic lid.
Package deflection and mechanical stress of microelectronic packaging is minimized in a two step manufacturing process. In a first step, a ceramic insulator is high-temperature bonded between a wraparound lead layer and a buffer layer of a same material as the lead layer to provide a symmetrically balanced three-layer structure. In a second step, the three-layer structure is high temperature bonded, using a lower melt point braze, to a heat spreader. This package configuration minimizes package deflection, and thereby improves thermal dissipation and reliability of the package.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/08 - ConteneursScellements caractérisés par le matériau du conteneur ou par ses propriétés électriques le matériau étant un isolant électrique, p. ex. du verre
H01L 23/04 - ConteneursScellements caractérisés par la forme
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
A semiconductor packaging structure includes a copper heat-sink with a shim projection which provides a stress release structure. The heat-sink with the shim projection may be used in conjunction with a pedestal in order to further reduce the thermal stress produced from the mismatch of thermal properties between the copper heat-sink metal and the ceramic frame. The copper heat-sink with a shim projection may also be part of the semiconductor package along with a lead frame, the ceramic frame, a semiconductor device, a capacitor, a wire bond and a ceramic lid or an encapsulation. The copper heat-sink, the ceramic frame and the lead frame are all chosen to be cost effective, and chosen such that the packaging process for the semiconductor device is able to achieve a smaller size while maintaining high reliability, low cost, and suitability for volume manufacturing.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/057 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur les connexions étant parallèles à la base
38.
SEMICONDUCTOR PACKAGING STRUCTURE AND PACKAGE HAVING STRESS RELEASE STRUCTURE
A semiconductor packaging structure includes a copper heat-sink with a shim projection which provides a stress release structure. The heat-sink with the shim projection may be used in conjunction with a pedestal in order to further reduce the thermal stress produced from the mismatch of thermal properties between the copper heat-sink metal and the ceramic frame. The copper heat-sink with a shim projection may also be part of the semiconductor package along with a lead frame, the ceramic frame, a semiconductor device, a capacitor, a wire bond and a ceramic lid or an encapsulation. The copper heat-sink, the ceramic frame and the lead frame are all chosen to be cost effective, and chosen such that the packaging process for the semiconductor device is able to achieve a smaller size while maintaining high reliability, low cost, and suitability for volume manufacturing.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/06 - ConteneursScellements caractérisés par le matériau du conteneur ou par ses propriétés électriques
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
39.
OPTICAL MODULE AND OPTICAL MODULE PACKAGE INCORPORATING A HIGH-THERMAL-EXPANSION CERAMIC SUBSTRATE
An optical module includes a high-thermal-expansion ceramic substrate on which is mounted a planar lightwave circuit as well as at least one device component. The high- thermal-expansion ceramic substrate may be used in conjunction with a high-thermal- expansion metal in order to reduce thermal stress produced from the mismatch of thermal properties within the optical module. The high-thermal-expansion ceramic substrate may also be part of an optical module package which includes a die attach area, on which at least one device can be mounted, and a circuit pattern which lectrically connects the at least one device to other at least one device components. A high-thermal-expansion metal may also be used with the high-thermal-expansion ceramic substrate in order to reduce the thermal stress that would otherwise exist in the optical module package.
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/35 - Moyens de couplage optique comportant des moyens de commutation
Forming the chip attachment system includes obtaining a chip having a bump core on a die. The method also includes obtaining an intermediate structure having a transfer pad on a substrate. The method further includes transferring the transfer pad from the substrate to the bump core such that the transfer pad becomes a solder layer on the bump core.
H01L 21/44 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
Forming the chip attachment system includes obtaining a chip having a bump core on a die. The method also includes obtaining an intermediate structure having a transfer pad on a substrate. The method further includes transferring the transfer pad from the substrate to the bump core such that the transfer pad becomes a solder layer on the bump core.
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
An electronics packaging system includes an insulator 14 that electrically insulates a heat sink 12 from electrical leads 18. An interface 10 between the insulator 14 and the heat sink 12 includes a stress reliever 16 constructed such that a stiffness of the interface is greater than the stiffness of the interface without the stress reliever.
H01L 23/34 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
An electronics packaging system includes an insulator that electrically insulates a heat sink from electrical leads. An interface between the insulator and the heat sink includes a stress reliever constructed such that a stiffness of the interface is greater than the stiffness of the interface without the stress reliever.
H01L 23/10 - ConteneursScellements caractérisés par le matériau ou par la disposition des scellements entre les parties, p. ex. entre le couvercle et la base ou entre les connexions et les parois du conteneur
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/047 - ConteneursScellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur les autres connexions étant parallèles à la base
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
A coaxial transition arrangement including a coaxial connector for connecting a coaxial cable to a multilayer package has an improved coaxial connector for accomplishing impedance matching and providing improved broadband performance. Impedance matching is provided by a metal disk structure comprising a plurality of metal disks mounted on a center conductor pin of the coaxial connector. The disks are mounted in spaced-apart relation on the center conductor pin and have different radiuses which decrease with increasing distance from the base of the center conductor pin. The coaxial connector has a shroud which is configured to accommodate the metal disk structure therein, as does the ring of ground vias forming a part of the multilayer package.
A coaxial transition arrangement including a coaxial connector for connecting a coaxial cable to a multilayer package has an improved coaxial connector for accomplishing impedance matching and providing improved broadband performance. Impedance matching is provided by a metal disk structure comprising a plurality of metal disks mounted on a center conductor pin of the coaxial connector. The disks are mounted in spaced-apart relation on the center conductor pin and have different radiuses which decrease with increasing distance from the base of the center conductor pin. The coaxial connector has a shroud which is configured to accommodate the metal disk structure therein, as does the ring of ground vias forming a part of the multilayer package.
H01R 24/44 - Dispositifs de couplage en deux pièces, ou l'une des pièces qui coopèrent dans ces dispositifs, caractérisés par leur structure générale ayant des contacts disposés concentriquement ou coaxialement spécialement adaptés à la haute fréquence comprenant des moyens d'adaptation d'impédance ou des composants électriques, p. ex. des filtres ou des interrupteurs comprenant des moyens d'adaptation d'impédance
H01R 12/58 - Connexions fixes pour circuits imprimés rigides ou structures similaires caractérisées par les bornes bornes pour insertion dans des trous
H01R 13/6464 - Moyens pour empêcher la diaphonie en ajoutant des éléments capacitifs
57.
Broadband RF connector interconnect for multilayer electronic packages
A coaxial transition arrangement including a coaxial connector for connecting a coaxial cable to a multilayer package has an improved coaxial connector for accomplishing impedance matching and providing improved broadband performance. Impedance matching is provided by a metal disk structure comprising a plurality of metal disks mounted on a center conductor pin of the coaxial connector. The disks are mounted in spaced-apart relation on the center conductor pin and have different radiuses which decrease with increasing distance from the base of the center conductor pin. The coaxial connector has a shroud which is configured to accommodate the metal disk structure therein, as does the ring of ground vias forming a part of the multilayer package.
