This spin inductor includes a wiring layer, a first ferromagnetic layer, and a first heat dissipation layer. The first ferromagnetic layer is in contact with a first surface of the wiring layer. The first heat dissipation layer and the wiring layer sandwich the first ferromagnetic layer in a laminating direction.
This calculation model is a calculation model that is appliable to an Ising model or QUBO, in which a plurality of choices in a combinatorial optimization problem are assigned to any of possible values of one or more binary variables, and one of the binary variables is fixed on the basis of constraints imposed on the combinatorial optimization problem.
A coil component includes an element body, and a coil disposed in the element body. The element body includes a first region and a second region in an element body portion in which the coil is disposed. The first region includes a magnetic material. The second region is located adjacent to and in contact with the first region and includes a material having a shrinkage rate larger than a shrinkage rate of the magnetic material.
[Problem] To improve an alkaline storage battery. [Solution] Provided is a positive electrode active material for alkaline storage batteries which comprises particles that each include a core layer and a coating layer disposed on the surface of the core layer, wherein the core layer comprises a hydroxide 1 of at least one metal including nickel (Ni), the coating layer comprises a hydroxide 2 of at least one metal including nickel (Ni), and the elemental composition of the hydroxide 1 and the elemental composition of the hydroxide 2 differ. Also provided is an alkaline storage battery using said positive electrode active material.
H01M 4/52 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer
An MR element includes: a magnetization pinned layer in which a direction of magnetization is fixed; a free layer configured to be capable of including a magnetic vortex structure and configured so that a center of the magnetic vortex structure can move in accordance with a target magnetic field; and a gap layer arranged between the magnetization pinned layer and the free layer. The magnetization pinned layer includes a first region and a second region in which the directions of the magnetization of the magnetization pinned layer are less aligned than the first region. The free layer is arranged so that an area of an overlapping part in which the free layer and the first region overlap each other when viewed in a stacking direction of the magnetization pinned layer, the gap layer, and the free layer is larger than an area of an overlapping part in which the free layer and the second region overlap each other when viewed in the stacking direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
An MR element includes a magnetization pinned layer, a free layer configured to be able to have a magnetic vortex structure and so that a center of the magnetic vortex structure can move in accordance with a target magnetic field, and a gap layer arranged between the magnetization pinned layer and the free layer. The free layer includes a lower surface located at one end in a stacking direction of the magnetization pinned layer, the gap layer and the free layer, an upper surface located at the other end in the stacking direction, and a side surface connecting the lower surface and the upper surface. A side surface includes an inclined portion inclined relative to the stacking direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
7.
SOFT MAGNETIC ALLOY, SOFT MAGNETIC ALLOY RIBBON, AND MAGNETIC DEVICE
A soft magnetic alloy contains a main component having a composition formula (Fe(1-α)X1α)(1-(a+b+c+d+e+f+g+h))MaBbPcSidCeMnfX2gOh. X1 includes at least one selected from the group consisting of Co and Ni. X2 includes at least one selected from the group consisting of Al, Ag, Zn, Sn, As, Sb, Cu, Cr, Bi, N, and a rare earth element. M includes at least one selected from the group consisting of Nb, Hf, Zr, Ta, Ti, Mo, W, and V. 0.02≤a≤0.10, 0.02≤b≤0.20, 0≤c≤0.10, 0≤d≤0.15, 0≤e≤0.03, 0
A non-aqueous electrolyte solution includes lithium hexafluorophosphate, lithium bis(fluorosulfonyl)imide, and lithium nitrate. In the non-aqueous electrolyte solution, a molar ratio of the lithium nitrate relative to a molar ratio of the lithium hexafluorophosphate is 0.01 or more and 0.15 or less, and a molar ratio of the lithium bis(fluorosulfonyl)imide relative to a molar ratio of the lithium hexafluorophosphate is 0.1 or more and 1.0 or less.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/133 - Électrodes à base de matériau carboné, p. ex. composés d'intercalation du graphite ou CFx
H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/583 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
A retinal projection device to be mounted on a near-eye wearable device includes: a light source that emits laser light; a movable mirror that performs scanning with the laser light; and a reflector that projects an image onto a retina of a user wearing the near-eye wearable device by reflecting the laser light having passed through the movable mirror and irradiating the retina with reflected light. The reflector includes: a reflective layer that reflects the laser light at a reflection angle that changes depending on a wavelength of the laser light and emits the laser light as the reflected light; and a phase correction layer that corrects chromatic aberration of the reflected light.
To improve, in an electronic component having a structure in which conductor layers including inductors and resin layers are alternately stacked, the use efficiency of the conductor layers. An electronic component includes conductor layers and resin layers in an alternately stacking manner. The conductor layer includes a conductor pattern, and the conductor layer includes a conductor pattern. The conductor pattern includes a support part that overlaps a terminal electrode and coil parts connected to the support part without overlapping the terminal electrode. The conductor pattern includes a support part that overlaps the terminal electrode and is connected to the terminal electrode through a via formed in the resin layer and a coil part connected to the support part without overlapping the terminal electrode. The coil parts are connected to each other through the support part, and the support part is entirely covered with the resin layer.
An electronic component includes a wire and a terminal electrode connected to a lead of the wire and at least partly covered with a deposited film. The deposited film of the terminal electrode connected to the lead includes a surface having a glossy surface with fewer surface irregularities than those of a non-glossy surface remaining as-is as of formation of the deposited film. The glossy surface is located near the lead connected to the terminal electrode.
The metasurface reflector includes a first metal layer and a second metal layer stacked in the z-axis direction, a dielectric layer provided between the first metal layer and the second metal layer in the z-axis direction, and a color filter layer covering the surface of the second metal layer opposite to the dielectric layer. The dielectric layer has a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit areas arranged in the x-axis direction along the main surface and in the y-axis direction along the main surface and intersecting with the x-axis direction. The second metal layer includes metal units provided in each of all or some of the plurality of unit areas.
A magnetic sensor includes a soft magnetic body having a first end surface and a second end surface located on opposite sides, a first MR element located near the first end surface, a second MR element located near the second end surface, and a first lead that electrically connects the first MR element and the second MR element and includes a portion overlapping the soft magnetic body when observed in a second direction orthogonal to a first direction in which the first and second MR elements are arranged.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A nanogranular magnetic film has a structure including a second phase and first phases dispersed in the second phase. The first phases include nanoscale metal phases containing Fe and Co. The second phase contains oxygen and nitrogen. The metal phases include one or more crystallites. The one or more crystallites have crystallite sizes with a mode of 1.5 nm or more and 6.0 nm or less based on volume.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
15.
ROTATION ANGLE DETECTION DEVICE AND FOLDABLE MACHINE COMPRISING SAME
A rotation angle detection device comprises a magnet attached to one of a first member and a second member that is rotatably supported by the first member, and a magnetic sensor attached to the other of the first member and the second member. The first member has a first rotation axis extending in the Z-direction, and the second member has a second rotation axis that is parallel to the first rotation axis. The second member rotates about the first rotation axis in a first angle interval and rotates about the second rotation axis in a second angle interval that is contiguous with the first angle interval. The magnetic sensor detects the direction of the magnetic field in a plane orthogonal to the Z-direction. The magnetic sensor is spaced away from the center of the magnet in the Z-direction.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
Provided are an optical device and an optical system that can appropriately irradiate a magnetic element with reflected light from an irradiated object with a simple configuration without the need for highly accurate optical axis adjustment. An optical device 1A of one aspect includes at least one magnetic element 30 having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first and second ferromagnetic layers, laser diodes 11, 12, 13, and 14 that emit laser light, and a waveguide 20. The waveguide 20 has at least one optical input port 21i, 22i, 23i, and 24i through which the laser light from the laser diodes 11, 12, 13, and 14 is incident, and an optical output port 27o through which the light is emitted to the outside, and at least one magnetic element 30 is disposed in the vicinity of the optical output port 27o.
A soft magnetic powder including soft magnetic metal particles having a particle size distribution, wherein when the soft magnetic metal particles are grouped into a first particle group, a second particle group, a third particle group, and a fourth particle group, and an average of number based cumulative frequencies of the first to fourth particle groups and average solidities of the first to fourth particle groups are plotted on a virtual two-dimensional coordinate to obtain a linear approximation of plotted datum using a least-squares method, a slope of the obtained approximated straight-line my satisfies an absolute value |my| of 0.005 or greater and 0.500 or less.
An information processing device includes a plurality of magnetic circuits, at least one input terminal that is connected to at least one of the plurality of magnetic circuits, at least one output terminal that is connected to at least one of the plurality of magnetic circuits, and at least one connection portion that electrically or magnetically couples at least two of the plurality of magnetic circuits.
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
G06F 30/33 - Vérification de la conception, p. ex. simulation fonctionnelle ou vérification du modèle
H02J 50/10 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif
This spin inductor includes: a wiring layer; a first ferromagnetic layer which is in contact with a first surface of the wiring layer; and a second ferromagnetic layer which is in contact with a second surface of the wiring layer facing the first surface.
This control device for a motor, power generator or the like includes: current supply lines 42a, 42b, 42c which respectively supply currents of different phases to coils 32 (32a ) of the motor or power generator, which is provided with magnets; and a switching unit 44 which switches to a connected state or a disconnected state between the current supply lines.
The purpose of the present invention is to allow users to sooner understand a more accurate time required in order for charging to complete. This charging control device comprises: a processing unit that, during charging of a power storage device, corrects a calculated value of remaining charging time calculated at the start of charging of the power storage device, and, at the start of charging, acquires information indicating a correction timing at which the calculated value of the remaining charging time is corrected; and a reporting unit that reports the correction timing at the start of charging and reports the correction value of the calculated value of the remaining charging time during charging.
G01R 31/36 - Dispositions pour le test, la mesure ou la surveillance de l’état électrique d’accumulateurs ou de batteries, p. ex. de la capacité ou de l’état de charge
G01R 31/367 - Logiciels à cet effet, p. ex. pour le test des batteries en utilisant une modélisation ou des tables de correspondance
G01R 31/374 - Dispositions pour le test, la mesure ou la surveillance de l’état électrique d’accumulateurs ou de batteries, p. ex. de la capacité ou de l’état de charge avec des moyens pour corriger la mesure en fonction de la température ou du vieillissement
G01R 31/3842 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p. ex. état de charge combinant des mesures de tension et de courant
G01R 31/396 - Acquisition ou traitement de données pour le test ou la surveillance d’éléments particuliers ou de groupes particuliers d’éléments dans une batterie
A magnetic sensor includes at least one bridge circuit and a plurality of magnetoresistive elements. The at least one bridge circuit includes a first resistor section, a second resistor section, and a third resistor section. Each of the plurality of magnetoresistive elements includes a magnetization pinned layer having a magnetization whose direction is fixed. The plurality of magnetoresistive elements includes first, second, and third magnetoresistive elements constituting first, second, and third resistor sections, respectively. The direction of the magnetization of the magnetization pinned layer of the first magnetoresistive element, the direction of the magnetization of the magnetization pinned layer of the second magnetoresistive element, the direction of the magnetization of the magnetization pinned layer of the third magnetoresistive element intersect with one another at angles other than 0 degrees and 180 degrees.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H02K 29/08 - Moteurs ou génératrices à dispositifs de commutation non mécaniques, p. ex. tubes à décharge ou dispositifs à semi-conducteurs avec des dispositifs détecteurs de la position utilisant des dispositifs à effet magnétique, p. ex. dispositifs à effet Hall ou magnéto-résistances
24.
COIL COMPONENT AND WIRELESS POWER TRANSMISSION DEVICE HAVING THE SAME
Disclosed herein is a coil component that includes a magnetic body having a plurality of areas located at different positions in a planar direction perpendicular to a thickness direction of the magnetic body, and first and second coils facing a surface of the magnetic body on one side in the thickness direction. The plurality of areas include a first area and a second area located outside the first area in the planar direction. The second area of the magnetic body has a smaller thickness in the thickness direction than the first area of the magnetic body. The first coil is disposed so as to overlap the first area of the magnetic body. The second coil is disposed so as to overlap the second area of the magnetic body.
H01F 27/34 - Moyens particuliers pour éviter ou réduire les effets électriques ou magnétiques indésirables, p. ex. pertes à vide, courants réactifs, harmoniques, oscillations, champs de fuite
H01F 27/00 - Détails de transformateurs ou d'inductances, en général
H02J 50/10 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four auxiliary resistor sections constituted by a plurality of magnetoresistive elements. The element layout area includes first to fourth areas for laying out the four auxiliary resistor sections, respectively. Two of the first to fourth areas are arranged so that at least parts of the respective two areas sandwich a reference axis therebetween, and other two of the first to fourth areas are arranged so that at least parts of the respective other two areas sandwich the reference axis therebetween.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
26.
Tapered Optical And Magnetic Elements For Improved Writing In Heat-Assisted Magnetic Recording
Writer head products for heat-assisted magnetic recording devices and methods of making the same are disclosed. The writer heads include multiple layers including a waveguide blocking layer, a waveguide layer, a near-field transducer layer, a heat sink layer, and a peg layer. Each of the layers may comprise a tapered angle near an air-bearing surface. The writer heads further include a main magnetic pole adjacent to the optical component including the same tapered angle near the air-bearing surface.
G11B 5/31 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction utilisant des films minces
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
27.
Pre-Assisting Microwave-Assisted Magnetic Recording With Spin-Torque Nano-Oscillators
The present embodiments relate to a pre-assisting microwave assisted magnetic recording (MAMR) (PA-MAMR) write-head structure where the STO is disposed within a leading shield (LS). The STO can be used to pump energy into the media before the writing process. The STO can also pre-excite the media and let the media oscillation damp over the time and then switch under the writer field. The present embodiments can be easier to increase the magnetic volume and magnetic moment of the free layer, while also achieving a greater oscillation frequency with magnetization oscillations around the axis in the film plane.
G11B 5/127 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
28.
PHYSICAL RESERVOIR AND INFORMATION PROCESSING DEVICE
A physical reservoir according to the present embodiment comprises an information processing unit and an output unit. The information processing unit includes a nonlinear processing unit and a linear processing unit respectively connected to the output unit. The nonlinear processing unit and the linear processing unit are given the same input signal. The nonlinear processing unit includes a plurality of physical reservoir elements and nonlinearly converts the input signal. The linear processing unit includes a switch and a plurality of signal holding elements. The switch switches the signal holding element into which to input the input signal from among the plurality of signal holding elements. Each of the plurality of signal holding elements is configured to hold the input signal for a certain time.
In this magnet unit, a magnet member includes at least one magnet and has a columnar shape including a main surface and an end surface having an area smaller than the area of the main surface. A temperature information transmitter is provided on the surface of the magnet member and transmits temperature information of the magnet member. The temperature information transmitter contacts the magnet member. In this temperature information transmitter, a temperature sensitive part detects a surface temperature. A coil is provided on the end surface and outputs information on the temperature detected by the temperature sensitive part.
This manufacturing method for a rotor 20 includes: an integration step for obtaining an element unit 50 in which a temperature sensitive part 55 and a coil 52 are integrated by a housing 53; and an attachment step for attaching the element unit 50 obtained in the integration step to an end surface 23A in the axial direction of a rotor core 23. In the attachment step, the element unit 50 is attached so that the temperature sensitive part 55 abuts on an end surface 25A in the axial direction of a permanent magnet 25.
H02K 15/035 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents sur le rotor
G01K 1/14 - SupportsDispositifs de fixationDispositions pour le montage de thermomètres en des endroits particuliers
G01K 1/024 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres pour l’indication à distance
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
H02K 11/25 - Dispositifs pour détecter la température ou actionnés par des valeurs de cette variable
An electronic component includes: an insulating layer covering the surface of a substrate; an adhesion layer provided on the surface of the insulating layer and extending so as to surround at least a first area which is a partial area of the insulating layer; a lower electrode pattern provided in the first area; an insulating layer provided in the first area so as to cover the lower electrode pattern; an upper electrode pattern covering the lower electrode pattern through the insulating layer; and an interlayer insulating film provided on the insulating layer and embedding therein the adhesion layer, lower electrode pattern, insulating layer, and upper electrode pattern. The edge of the insulating layer is positioned on the adhesion layer.
H01G 4/40 - Combinaisons structurales de condensateurs fixes avec d'autres éléments électriques non couverts par la présente sous-classe, la structure étant principalement constituée par un condensateur, p. ex. combinaisons RC
32.
MULTILAYER ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
A multilayer electronic device having an exterior region 15 in which a first exterior region 15a and a second exterior region 15b are laminated continuously in a lamination direction, where the first exterior region contains “RB” in an amount greater than “RA” and the second exterior region 15b contains “RA” in an amount greater than that contained in the first exterior region 15a. The multilayer electronic device also includes an interior region 13, where a concentration of “RA” in an inner dielectric layer is higher than a concentration of “RA” in the first exterior region 15a, the second exterior region 15b and the interior region 13 are adjacent to each other in the lamination direction, and a thickness of the second exterior region 15b is 2 to 50 μm.
A position detection device includes a magnetic field generator and a magnetic sensor. The magnetic field generator is configured so that a mode of variation of a direction of a target magnetic field relative to variations in a position of a lens is such that the direction of the target magnetic field varies nonlinearly relative to the variations in the position of the lens. The magnetic sensor is configured so that a mode of variation of a detection signal relative to variations in the direction of the target magnetic field is such that the detection signal varies nonlinearly relative to the variations in the direction of the target magnetic field.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G03B 30/00 - Modules photographiques comprenant des objectifs et des unités d'imagerie intégrés, spécialement adaptés pour être intégrés dans d'autres dispositifs, p. ex. des téléphones mobiles ou des véhicules
H02K 11/215 - Dispositifs utilisant un effet magnétique, p. ex. des éléments à effet Hall ou magnéto-résistifs
H04N 23/54 - Montage de tubes analyseurs, de capteurs d'images électroniques, de bobines de déviation ou de focalisation
34.
SOLID ELECTROLYTE LAYER AND ALL-SOLID-STATE SECONDARY BATTERY
A solid electrolyte layer includes a first phase region containing a first solid electrolyte which contains Li, Si, P and O and has a γ-Li3PO4 type crystal structure, and a second phase region containing a second solid electrolyte which contains Li, Si, P and O, has a different composition from the first solid electrolyte, and has a Li4SiO4 type crystal structure. In the solid electrolyte layer, the ratio of the volume of the first phase region to the volume of the second phase region is preferably 0.1 or more and 9 or less.
A resonant circuit (30) comprises: a first resonator (11) having a first end (11a) and a second end (11b); a sub-circuit (40) connected in parallel to the first resonator (11); and a capacitor (C31). The sub-circuit (40) includes a first inductor (L31), a second inductor (L32), and a third inductor (L33). At least two inductors among the first inductor (L31), the second inductor (L32), and the third inductor (L33) are mutually connected. The capacitor (C31) is provided at a position that is between the first end (11a) of the first resonator (11) and the ground and is between the second end (11b) of the first resonator (11) and the ground.
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
36.
ROTOR, ROTARY ELECTRIC MACHINE, AUTOMOBILE, AND ROTOR MANUFACTURING METHOD
This rotor comprises magnets, a core, a shaft, and a temperature information transmission device. The core is rotated while holding the magnets. The shaft is disposed on the rotation axis of the core. The temperature information transmission device includes a temperature-sensitive unit and coils. The temperature-sensitive unit detects temperature. The coils output information about the temperature detected by the temperature-sensitive unit. The temperature-sensitive unit is installed closer to the magnets than the coils. The coils are disposed on the shaft.
This method for manufacturing a rotor 20 comprising a rotor core 23, a permanent magnet 25 disposed within a space S of the rotor core 23, and an element unit 50 that transmits temperature information regarding the temperature of the permanent magnet 25 includes an attachment step for attaching the element unit 50 to the rotor core 2, the element unit 50 having a temperature-sensitive element 51 whose electrical resistance changes according to the temperature of the permanent magnet 25 and a coil 52 electrically connected to the temperature-sensitive element 51. In the attachment step, the temperature-sensitive element 51 is attached so as to be in contact with a side surface 25A of the permanent magnet 25 in the space S of the rotor core 23.
H02K 11/25 - Dispositifs pour détecter la température ou actionnés par des valeurs de cette variable
G01K 1/14 - SupportsDispositifs de fixationDispositions pour le montage de thermomètres en des endroits particuliers
H02K 1/276 - Aimants encastrés dans le noyau magnétique, p. ex. aimants permanents internes [IPM]
H02K 15/035 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents sur le rotor
[Problem] To suppress dielectric breakdown caused by electric field concentration during OFF in a field effect transistor in which a current flows in a thickness direction of a substrate. [Solution] A field effect transistor 100 comprises: a drift layer 20 provided on an upper surface 11 of a semiconductor substrate 10 and having a trench region 21 and a fin structure part 23; a gate electrode 62 including a main body part 60 covering a side surface 23S of the fin structure part with a first insulation film 61 interposed therebetween; a source electrode 30 connected to an upper surface 23T of the fin structure part; and a drain electrode 40 connected to a rear surface 12 of the semiconductor substrate 10. The gate electrode 62 further includes a terminal part 65 which has a portion exposed from the source electrode 30. The source electrode 30 has a second portion 32 that does not overlap the trench region 21. A distance L1 in the thickness direction between the second portion 32 of the source electrode 30 and the semiconductor substrate 10 is shorter than a distance L2 in the thickness direction between an edge portion 65A of the terminal part 65 and the semiconductor substrate 10.
Writer head products for heat-assisted magnetic recording devices and methods of making the same are disclosed. The writer heads include multiple layers including a waveguide blocking layer, a waveguide layer, a near-field transducer layer, a heat sink layer, and a peg layer. The peg layer may comprise a small triangular section that extends from an air-bearing surface into the optical component. The writer heads further include a main magnetic pole adjacent to the optical component.
G11B 5/31 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction utilisant des films minces
G11B 13/08 - Enregistrement utilisant simultanément ou sélectivement des procédés ou des moyens entrant dans des groupes principaux différentsSupports d'enregistrement correspondantsReproduction simultanée ou sélective correspondante utilisant des interactions ou des moyens de transduction en champ proche et au moins un autre procédé ou moyen pour l'enregistrement ou la reproduction
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
41.
MAGNETIC SENSOR AND MANUFACTURING METHOD FOR THE SAME
A magnetic sensor includes: a support member including a first inclined surface and a second inclined surface that are inclined with respect to a reference plane and oriented in directions different from each other; a first MR element disposed on the first inclined surface; a second MR element disposed on the second inclined surface; and a first electrode that connects the first MR element and the second MR element, the first electrode including a part overlapping with a center of gravity of the first MR element and a center of gravity of the second MR element, when viewed in a direction perpendicular to the reference plane.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
An optical member driving mechanism is provided, including a movable portion, a fixed portion, and a driving assembly. The movable portion is configured to connect an optical member, and the movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move.
A coil device includes a core; a first conductor including a first coil portion inside the core, a first mounting portion partly exposed from the core, and a first connecting portion connecting the first coil portion and the first mounting portion; and a second conductor including a second coil portion extending along the first coil portion, a second mounting portion partly exposed from the core, and a second connecting portion connecting the second coil portion and the second mounting portion. At least either the first or second connecting portion becomes distant from the winding direction to provide an inter-conductor space therebetween with a distance increasing between the first and second conductors toward a mounting object. The space has a coupling controlling member including at least either a non-magnetic portion including a resin or a magnetic portion including a magnetic material.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
44.
SENSOR APPARATUS AND METHOD OF MANUFACTURING SENSOR APPARATUS
A sensor apparatus includes: one or more first wirings; second wirings; one or more first impedance elements; one or more second impedance elements; one or more first converter circuits each converting a first current flowing through one of the second wirings into a first voltage; a second converter circuit converting a second current flowing through one of the second wirings into a second voltage; one or more first amplifier circuits each outputting a first amplified voltage resulting from amplifying the first voltage, a second amplifier circuit outputting a second amplified voltage resulting from amplifying the second voltage, or both of the first and second amplifier circuits; and a subtractor circuit outputting at least one of a difference between the first amplified voltage and the second amplified voltage, a difference between the first amplified voltage and the second voltage, or a difference between the first voltage and the second amplified voltage.
G01K 7/24 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance non linéaire, p. ex. une thermistance dans un circuit spécialement adapté, p. ex. un circuit en pont
45.
OPTICAL MODULATOR, LIGHT SOURCE MODULE, AND OPTICAL MODULATION METHOD
Provided is an optical modulator with excellent responsiveness and stability capable of controlling the output light of the optical modulator at high speed and in a stable manner. An optical modulator 101 of one aspect includes an optical modulation element 11 in which multiple optical waveguides are formed on a thin film made of a material having an electro-optic effect, an electrode arranged on the thin film and applying an electric field to the multiple optical waveguides, drive circuitry 120 configured to apply a modulation voltage to the electrode, bias application circuitry 130 configured to apply a bias voltage to the electrodes, and feedforward control circuitry 150 configured to compensate for DC drift occurring in the multiple optical waveguides. The feedforward control circuitry changes the bias voltage output by the bias application circuitry over time based on a transfer function previously set according to the characteristics of the DC drift.
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
A multilayer electronic component includes: an element body including a first main surface forming a mounting surface, a second main surface facing the first main surface, and a side surface adjacent to the first main surface and the second main surface, the element body including a plurality of particles. A proportion of the first main surface or the side surface occupied by gaps between the plurality of particles is less than a proportion of the second main surface occupied by the gaps.
A coil component includes: an element body including a main surface, and a first side surface and a second side surface facing each other in a direction along the main surface; a coil disposed inside the element body and including a coil axis perpendicular to the main surface; and an external electrode disposed at least on the first side surface, wherein the element body includes: a first element body region located between the first side surface and the coil in the direction; and a second element body region located between the second side surface and the coil in the direction, and wherein the first element body region has a resistivity higher than a resistivity of the second element body region.
H01F 27/34 - Moyens particuliers pour éviter ou réduire les effets électriques ou magnétiques indésirables, p. ex. pertes à vide, courants réactifs, harmoniques, oscillations, champs de fuite
H01F 17/00 - Inductances fixes du type pour signaux
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
A metal member for a pressure sensor, including: a base wall and a side wall extending in a direction which crosses the base wall; wherein an outer base surface of the base wall includes an outer base surface side wall area which overlies with the side wall in plan view, and an outer base surface inner side wall area which is positioned inside of and in contact with the outer base surface side wall area and does not overlie the side wall in plan view; and the outer base surface inner side wall area includes, in plan view, a protruding part existing outside of a maximum circle which can be arranged in the outer base surface inner side wall area in plan view.
G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pressionTransmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
A magnetic sensor includes an insulating layer including a protruding surface, a first MR element, and a second MR element. The protruding surface includes a first curved surface portion. The first curved surface portion includes a first portion including an upper end portion of the protruding surface, and a second portion continuous with the first portion at a position away from the upper end portion of the protruding surface. When the shape of the protruding surface is regarded as a function Z, the mean value of the absolute value of a second derivative Z″ of the function Z corresponding to the first portion is smaller than the mean value of the absolute value of the second derivative Z″ of the function Z corresponding to the second portion.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
50.
INPUT DEVICE AND METHOD FOR CONTROLLING INPUT DEVICE
An input device includes an operation section and a controller. The operation section includes a piezoelectric element being arranged to receive a force from an operation body. The piezoelectric element includes one piezoelectric body including a first portion being arranged to be displaced through application of a voltage and a second portion being arranged to generate an electric charge through displacement. The operation section is arranged to output a signal responding to the electric charge generated in the second portion. The controller is arranged to acquire information regarding the force received from the operation body based on the signal output from the operation section.
G01L 1/16 - Mesure des forces ou des contraintes, en général en utilisant les propriétés des dispositifs piézo-électriques
G01L 1/26 - Mesures auxiliaires prises, ou dispositifs utilisés en liaison avec le mesurage des forces, p. ex. pour empêcher l'influence des composantes transversales de la force, pour empêcher la surcharge
51.
INFRARED DETECTION ELEMENT AND INFRARED SENSOR HAVING SAME
An infrared detection element comprises a temperature sensing layer and an infrared absorption layer that is provided in addition to the temperature sensing layer for absorbing infrared rays and converting the infrared rays into heat. The temperature sensing layer is thermally connected to the infrared absorption layer. The infrared absorption layer includes an iron oxide.
G01J 5/20 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p. ex. des dispositifs photoconducteurs
Disclosed herein is a gas sensor that includes: a substrate having a first cavity; a first heater supported on the substrate so as to overlap the first cavity; a first temperature-sensitive element supported on the substrate so as not to overlap the first heater; and a signal processing circuit configured to heat the first heater during gas concentration measurement. A temperature of the first temperature-sensitive element during the gas concentration measurement changes due to heat conducted from the first heater, mainly through the substrate, and in accordance with a change in a temperature of the first heater.
G01N 27/18 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps chauffé électriquement dépendant de variations de température produite par des variations de la conductivité thermique d'un matériau de l'espace environnant à tester
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
A coil component includes: an element body including a main surface, and a first side surface and a second side surface facing each other in a direction along the main surface; a coil disposed inside the element body and including a coil axis perpendicular to the main surface; and an external electrode disposed at least on the first side surface. The element body includes: a first element body region located between the first side surface and the coil in the direction; and a second element body region located between the second side surface and the coil in the direction. The first element body region has a dielectric constant lower than a dielectric constant of the second element body region.
An electronic component includes a first main body, and a second main body being mounted on the first main body and including an acoustic wave element. The first main body includes an input port, an output port, and a first circuit section being provided between the input port and the output port in a circuit configuration and including a low-pass filter and a high-pass filter. The acoustic wave element is provided between the first circuit section and the output port in the circuit configuration.
A magnetic core includes specific particles. The magnetic core includes a surface portion at a small distance from an outermost surface of the magnetic core and a central portion at a large distance from the outermost surface of the magnetic core. The specific particles include respective oxide phases with a specific thickness. The specific particles in the surface portion and the specific particles in the central portion have a specific relation of the thickness of the oxide phases. Alternatively, a magnetic core includes a soft magnetic metal particle. The soft magnetic metal particle includes an oxide phase at a surface of the particle. A maximum-thickness portion and an opposite maximum-thickness portion of the oxide phase have a specific relation.
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
56.
Devices and Methods of Detecting Driving Conditions from a Rotating
An example sensor assembly includes one or more sensors mountable on a wheel of a vehicle and one or more processors electrically coupled to the one or more sensors for determining a driving condition of the vehicle based on the first sensor signals and the second sensor signals. Methods for determining a driving condition of a vehicle based on sensor signals and a wheel assembly that includes a wheel and the sensor assembly are also disclosed.
B60W 40/06 - Calcul ou estimation des paramètres de fonctionnement pour les systèmes d'aide à la conduite de véhicules routiers qui ne sont pas liés à la commande d'un sous-ensemble particulier liés aux conditions ambiantes liés à l'état de la route
B60C 19/00 - Autres structures ou éléments du pneumatique
57.
MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer connected to the spin-orbit torque wiring, in which the spin-orbit torque wiring has a length in a first direction larger than a length in a second direction when viewed from a lamination direction, and the spin-orbit torque wiring has different constituent elements between a first region and a second region having a symmetrical positional relationship with respect to a reference plane which passes through a geometric center of the first ferromagnetic layer when viewed from the lamination direction and is orthogonal to the first direction, and is asymmetrical in the first direction.
An electric power conversion apparatus includes a first electric power terminal, a switcher, a transformer, a rectifier with a switching circuit including first and second switching devices, a smoother, a second electric power terminal, a controller, and a driver driving the switching circuit. The switching circuit includes a first device that is provided on a path coupling a first terminal and a control terminal of the first switching device to each other, and that is configured to clamp a voltage. The driver is configured to output a first control signal and a second control signal from a first output terminal and a second output terminal, respectively. The controller is configured to control operation to cause electric power to be supplied from the second electric power terminal toward the first electric power terminal, and set an output impedance of the first output terminal of the driver to a high impedance state.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
In this battery pack (1) according to one embodiment, a plurality of batteries (5) are connected to each other, and a substrate module (10) is incorporated. The substrate module (10) is configured with a substrate (11), and a battery protection element (12) and a temperature detection element (13) mounted on a front surface (11a) of the substrate, and a rear surface (11b) of the substrate module opposes the batteries (5). The temperature detection element (13) is mounted at the edge of the front surface (11a) of the substrate (11) in the vicinity of a notch (11c). With such a structure, the temperature detection element (13) can detect not only the temperature of the space above the substrate (11), but also the temperature of the batteries (5). (Selected drawing: fig. 1)
H01M 50/213 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules caractérisés par leur forme adaptés aux cellules ayant une section transversale courbée, p. ex. ronde ou elliptique
H01M 50/284 - MonturesBoîtiers secondaires ou cadresBâtis, modules ou blocsDispositifs de suspensionAmortisseursDispositifs de transport ou de manutentionSupports comprenant l’insertion de cartes de circuits, p. ex. de cartes de circuits imprimés
H01M 50/583 - Dispositifs ou dispositions pour l’interruption du courant en réponse au courant, p. ex. fusibles
60.
Asymmetric Side Gap Writer Fabricated By Ion-Beam Etching (IBE) / Ion-Beam Deposition (IBD) Process For Aerial Density Capability (ADC) Improvement
The present embodiments relate to a write head with an asymmetrical side gap (SG) design. In the asymmetrical design, the main pole can be disposed offset to a central axis of the write head such that the main pole is closer to a first side shield (SS) portion than a second SS portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process. The asymmetrical design can provide a narrower side gap width while mitigating any writability limitations or constraints caused by scaling down the SG.
An R-T-B based permanent magnet contains a rare earth element, Fe, Zr, Cu, B, C, O, and N. The magnet contains 28.50 mass % or more and 32.00 mass % or less rare earth element, 0.01 mass % or more and 0.50 mass % or less Zr, 0.04 mass % or more and 0.50 mass % or less Cu, 0 mass % or more and 0.60 mass % or less Al, 0 mass % or more and 0.80 mass % or less Ga, 0 mass % or more and 3.50 mass % or less Co, 0.88 mass % or more and 1.00 mass % or less B, 0.05 mass % or more and 0.12 mass % or less C, 0.11 mass % or more and 0.30 mass % or less O, 0.015 mass % or more and 0.07 mass % or less N, and Fe substantially constituting a balance. The magnet contains 0.03 mass % or more and 0.20 mass % or less heavy rare earth element.
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 3/16 - Compactage et frittage par des opérations successives ou répétées
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 9/02 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C22C 38/06 - Alliages ferreux, p. ex. aciers alliés contenant de l'aluminium
C22C 38/14 - Alliages ferreux, p. ex. aciers alliés contenant du titane ou du zirconium
C22C 38/16 - Alliages ferreux, p. ex. aciers alliés contenant du cuivre
62.
TEMPERATURE SENSOR ASSEMBLY, ATTACHMENT COMPONENT, PROBE COMPONENT, AND TEMPERATURE MEASUREMENT ASSEMBLY
A Temperature sensor assembly is provided that comprises a probe component and an attachment component. The probe component is configured to measure a temperature. The attachment component has a holding portion and an attachment portion. Further, the attachment portion is configured such that the temperature sensor assembly can be attached to an object whose temperature is to be measured via the attachment portion. Furthermore, the holding portion exerts a holding force on the probe component at least in a first direction, and the probe component has an engagement portion that engages such with the holding portion that movement of the probe component in a direction different to the first direction is hindered or fully restricted.
G01K 1/143 - SupportsDispositifs de fixationDispositions pour le montage de thermomètres en des endroits particuliers pour la mesure de la température de surfaces
[Problem] To suppress dielectric breakdown caused by electric field concentration in the off state in a field-effect transistor which has a fin-type structure and in which a current flows in the thickness direction of a substrate. [Solution] A field-effect transistor 100 comprises: a drift layer 20 provided on an upper surface 11 of a semiconductor substrate 10 and having a trench region 21 and a plurality of fin structure parts 23; a gate electrode 62 covering at least a side surface 23S of the plurality of fin structure parts via an insulating film 61; a source electrode 30 connected to an upper surface 23T of the plurality of fin structure parts; a drain electrode 40 connected to a rear surface 12 of the semiconductor substrate 10; and a reverse conductivity type semiconductor layer 50 provided on a surface of the drift layer 20. The reverse conductivity type semiconductor layer 50 covers a corner part 26, which is located at a boundary between a bottom part 22 of the trench region and an outer peripheral wall 25 of the trench region in the vicinity of an edge portion 63A of a terminal part 63 where the gate electrode 62 is exposed, and is located farther to the outside than the edge portion 63A.
A piezoelectric valve includes a housing provided with an inflow hole and an outflow hole for air, and a valve element disposed in the housing and configured to open and close the inflow hole. The valve element is configured by a piezoelectric unit including a plate-shaped piezoelectric element and a diaphragm on which the piezoelectric element is stacked. The inflow hole does not overlap the piezoelectric element but overlaps only the diaphragm when viewed from a stacking direction of the piezoelectric element in the piezoelectric unit.
F16K 31/00 - Moyens de fonctionnementDispositifs de retour à la position de repos
F16K 7/16 - Dispositifs d'obturation à diaphragme, p. ex. dont un élément est déformé, sans être déplacé entièrement, pour fermer l'ouverture à diaphragme plat, en forme d'assiette ou en forme de bol disposé pour être déformé contre un siège plat le diaphragme étant actionné mécaniquement, p. ex. par une tige filetée ou par came
A piezoelectric valve is a piezoelectric valve driven by a DC component, and includes a plurality of piezoelectric elements electrically connected in parallel via electrodes made of a metal-plated film; a conductive diaphragm joined to the plurality of piezoelectric elements via the electrodes; and a resistor electrically connected to the plurality of piezoelectric elements, and an electric resistance value of the resistor is less than an insulation resistance value of each of the piezoelectric elements.
F16K 31/00 - Moyens de fonctionnementDispositifs de retour à la position de repos
F16K 7/12 - Dispositifs d'obturation à diaphragme, p. ex. dont un élément est déformé, sans être déplacé entièrement, pour fermer l'ouverture à diaphragme plat, en forme d'assiette ou en forme de bol
H10N 30/00 - Dispositifs piézo-électriques ou électrostrictifs
H10N 30/063 - Formation d’interconnexions, p. ex. d’électrodes de connexion de parties piézo-électriques ou électrostrictives multicouches
A coil device including a bobbin 3, a coil 1 including wound wire parts 10 and 20 wound around the bobbin, a terminal 71 connecting to the coil 1, and a cover 5 protecting the wound wire part 10. The cover 5 includes a cover main body 50 covering an outside in a height direction perpendicular to a winding axis of the of the wound wire part 10. The terminal 71 is mounted on the cover main body. The terminal 71 includes a wire connection part 71a connecting with a lead part 11 pulled out from the wound wire part 10, and an external connection part 71c connected to the wire connection part 71a.
[Problem] To suppress dielectric breakdown caused by electric field concentration in an OFF state in a field-effect transistor which has a fin-type structure and in which a current flows in the thickness direction of a substrate. [Solution] A field-effect transistor 100 comprises: a semiconductor substrate 10; a drift layer 20 provided on an upper surface 11 of the semiconductor substrate 10 and having a plurality of fin structure parts 23; a gate electrode 62 covering at least side surfaces 23S of the plurality of fin structure parts 23 via a first insulating film 61; a source electrode 30 connected to upper surfaces 23T of the plurality of fin structure parts 23; and a drain electrode 40 connected to a rear surface 12 of the semiconductor substrate 10. The gate electrode 62 includes a body part 60 and a terminal part 63. The distance between the terminal part 63 and the drift layer 20 is greater than the thickness of a portion of the first insulating film 61 that covers a bottom 22 of a trench region 21 and is located between the body part 60 and the drift layer 20.
The optical device includes a substrate, a waveguide layer having a slab portion that is provided in contact with the substrate and a ridge portion that is provided to protrude from the slab portion, a buffer layer that is provided so as to cover the waveguide layer and contains, as a principal component, SiO2 having a refractive index adjusted to be not less than 1.2 and less than 1.4, and a protection layer that is provided so as to cover the buffer layer and suppress a change in the refracting index of the buffer layer.
G02B 6/122 - Éléments optiques de base, p. ex. voies de guidage de la lumière
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
70.
Magnetic Recording Writer With Improved Side Shield
A magnetic recording writer is disclosed. The writer can include a main pole and side shields that have a first sidewall portion proximate to the ABS facing the curved sidewalls of the main pole and formed substantially conformal to the curved sidewalls up to a height of about 10 to 200 nm above the ABS, a second sidewall portion proximate to the corner connecting the first flared sidewalls and the curved sidewalls of the main pole and formed substantially conformal to the curved sidewalls up to the height of about 10 to 200 nm above the ABS, a third sidewall portion connected to the second sidewall portion and formed substantially conformal to the first flared sidewall, and a fourth sidewall portion connected to the third sidewall portion and formed substantially parallel to the ABS; and a side gap separating the main pole from each side shield.
A laminated film comprising a ferromagnetic layer and an antiferromagnetic layer is formed in which the ferromagnetic layer and the antiferromagnetic layer are in contact with each other in a first direction. A magnetically pinned layer, which has a pinned magnetization direction with respect to an external magnetic field, is formed from the ferromagnetic layer by applying a magnetic field in the first direction to the laminated film. After stopping the application of the magnetic field, the magnetic laminated body is formed by heating the laminated film to a temperature equal to or higher than the blocking temperature of the antiferromagnetic layer.
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
An electric power conversion apparatus includes: a first electric power terminal; an inductor; a capacitor; a switching circuit including a first switching device and a second switching device; a transformer including a first winding and a second winding; a rectifying circuit including a third switching device and a fourth switching device; a smoothing circuit; a second electric power terminal; and a control circuit configured to control operations of the switching circuit and the rectifying circuit by performing first control in which a first operation, a second operation, a third operation, a fourth operation, a fifth operation, and a sixth operation are performed in this order repeatedly.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02J 7/34 - Fonctionnement en parallèle, dans des réseaux, de batteries avec d'autres sources à courant continu, p. ex. batterie tampon
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 1/14 - Dispositions de réduction des ondulations d'une entrée ou d'une sortie en courant continu
A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
[Problem] To make it possible to visually recognize the directionality of a product in an inductor component having a configuration in which a plurality of coil parts are embedded in a magnetic element body part. [Solution] This inductor component 100 comprises: a magnetic element body part M; and coil parts 111-114 embedded in the magnetic element body part M and arranged in an X direction. Each of the coil parts 111-114 includes: a terminal electrode 121A or 121 having an end face exposed on a main surface 101; a terminal electrode 122 having an end face exposed on a main surface 102; and a coil pattern C11 having one end connected to the terminal electrode 121A or 121 and the other end connected to the terminal electrode 122. The end face of the terminal electrode 121A differs in area or shape from that of other terminal electrodes 121. The end face of the terminal electrode 121A is disposed to be offset in the X direction on the main surface 101.
[Problem] To make it possible to visually recognize the article orientation regarding an electronic component that has a configuration in which a plurality of elements are embedded in a base body. [Solution] An electronic component 100 comprises: a magnetic base body M; and coils 111-114 that are embedded in the magnetic base body M and are arranged in the X direction. Each of the coils 111-114 includes: a terminal electrode 121 which has an end face exposed out of a main surface 101; and a terminal electrode 122 which has an end face exposed out of a main surface 102. A lateral face 103 of the magnetic base body M is provided with a recess 107 which serves as an orientation mark to enable visual recognition of X-direction orientation.
A magnetic sensor comprising at least one magnetic field sensing element and at least one first soft magnetic layer. At least one magnetic field sensing element comprises a first magnetically pinned layer, a magnetically free layer whose magnetization direction changes with respect to an external magnetic field, and a first nonmagnetic layer. The first magnetically pinned layer, the magnetically free layer, and the first nonmagnetic layer are arranged in the order of the magnetically free layer, the first nonmagnetic layer, and the first magnetically pinned layer in a first direction. At least one first soft magnetic layer confronts the at least one magnetic field sensing element in the first direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
An electronic component includes a base body having a mounting surface and a main surface facing each other, a first electrode, a second electrode, a third electrode, and a fourth electrode disposed on the mounting surface, a first transmission line electrically connecting the first electrode and the second electrode, a second transmission line electrically connecting the third electrode and the fourth electrode and magnetically coupled to the first transmission line, and a capacitor provided between the first electrode and the third electrode and/or between the second electrode and the fourth electrode.
H01P 5/18 - Dispositifs à accès conjugués, c.-à-d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p. ex. coupleurs directionnels
79.
ANALYSIS DEVICE, ANALYSIS SYSTEM AND PORTABLE INFORMATION TERMINAL
An analysis device includes: at least one magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and a light source configured to emit a light, wherein the light is applied to an object to be analyzed, and the at least one magnetic element is configured to detect a reflected light reflected by the object or a transmitted light transmitted through the object.
[Problem] To enable fine adjustment of inductance for each of a plurality of coil parts in an inductor component having a configuration in which the plurality of coil parts are arranged in one direction. [Solution] An inductor component 100 comprises: a magnetic element body part M; and coil parts 111-114 embedded in the magnetic element body part M and arranged in the X direction. The coil parts 111-114 include: a terminal electrode 121 having an end surface exposed on a main surface 101; a terminal electrode 122 having an end surface exposed on a main surface 102; and coil patterns C11-C14 extending in the Y direction and each having one end connected to the terminal electrode 121 and the other end connected to the terminal electrode 122. The volume of the magnetic element body part M located within a prescribed distance range P from the central axis of the coil pattern C11 is larger than the volume of the magnetic element body part M located within the prescribed distance range P from the central axis of the coil pattern C12.
An information processing device according to an embodiment comprises: a candidate point setting unit that sets a candidate point group including a plurality of candidate points; a signal theoretical value calculation unit that calculates, for at least the position of each candidate point, a signal theoretical value corresponding to a signal measured by a measurement sensor unit when an object, which is the measurement sensor unit or a signal generation unit, is present at the position; and a position calculation unit that executes, on the basis of the measurement value, the candidate point group, and the signal theoretical value corresponding to a result of measuring the signal generated from the signal generation unit by the measurement sensor unit, a first determination process for determining, as a first point of interest, a first candidate point corresponding to the signal theoretical value according to the measurement value from among a plurality of first candidate points included in the candidate point group, and a second determination process for determining, as a second point of interest, a second candidate point corresponding to the signal theoretical value according to the measurement value from among a plurality of second candidate points included in the candidate point group and corresponding to the first point of interest.
G01B 21/00 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative
A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 11/18 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des dispositifs à effet Hall
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
An electric power conversion apparatus includes: first and second electric power terminals; a switching circuit; a transformer; a rectifying circuit; a smoothing circuit including a first inductor and a first capacitor; an electric power regeneration circuit; and a control circuit. The electric power regeneration circuit includes: a first diode including an anode coupled to the rectifying circuit, and a cathode coupled to a first node; a second capacitor having one end coupled to the first node and another end coupled to a reference node; a first regeneration switching device having one end coupled to the first node and another end coupled to a second node; a second regeneration switching device having one end coupled to the second node and another end coupled to the reference node; and a second inductor and a second diode provided on a path coupling the second node and the one end of the first capacitor.
H02M 1/14 - Dispositions de réduction des ondulations d'une entrée ou d'une sortie en courant continu
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
A magnetic sensor includes a first MR element and a second MR element, and a first magnetic field generator and a second magnetic field generator. Each of the first magnetic field generator and the second magnetic field generator includes a ferromagnetic portion and an antiferromagnetic portion to be exchange-coupled with the ferromagnetic portion. The first magnetic field generator is configured to generate a first magnetic field including a first component in a first direction, and to apply the first component to the first MR element. The second magnetic field generator is configured to generate a second magnetic field including a second component in a second direction, and to apply the second component to the second MR element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A method of forming a read head is described where a Tunneling Magnetoresistive (TMR) stack of layers comprised of a free layer (FL) and having sidewalls separated by a cross-track width is formed on a bottom shield. In subsequent steps, a first insulation layer and longitudinal biasing layer are formed on the sidewalls and bottom shield. After a TMR sensor backside is formed that exposes the bottom shield, a second insulation layer and permanent magnet (PM) layer are deposited on exposed portions of the bottom shield. Thereafter, the PM layer magnetization is initialized in a direction that adjusts FL bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior asymmetry measurement.
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
86.
Spin-Orbit Torque Assisted Magnetic Write Head Structure For Perpendicular Magnetic Recording
The present embodiments relate to a PMR write-head structure where the spin-orbit torque (SOT) material is in contact with the main pole in the write gap (WG). In addition, with the write shield (WS) electrically isolated from the side shield (SS) in the present designs, the current can be confined in the SOT material near the main pole, and the device resistance can remain within a reasonable range. It can be shown, using simulations, that the main pole switching rise time can be improved by 18˜24% using spin-orbit torque from heavy metals like platinum.
G11B 5/127 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
The present embodiments relate to a main pole design comprising a triangular shape and leading edge tapering for maximizing aerial density capacity. The design can include leading edge taper on the LS to create a taper angle on the MP to concentrate the magnetic flux in the MP. The MP can be shifted away from the LG to provide an additional LG portion on a leading side of the MP, and the taper angle can be greater at the additional LG portion than at the LG. The MP design can yield a larger MP surface area at the air bearing surface (ABS) and larger magnetic flux to the media bits.
A multilayer electronic component includes: a capacitor; a ground conductor layer; a conductor layer that constitute, cooperatively with the ground conductor layer, at least a part of the capacitor; a structure; and a stack. The structure includes a columnar conductor having a first end and a second end located on sides opposite each other in a stacking direction. The first end is connected to the ground conductor layer. Another conductor for constituting a component other than the capacitor and the structure is not connected to the second end. The columnar conductor is disposed between the conductor layer and a side surface of the stack.
H01G 4/40 - Combinaisons structurales de condensateurs fixes avec d'autres éléments électriques non couverts par la présente sous-classe, la structure étant principalement constituée par un condensateur, p. ex. combinaisons RC
H01G 2/22 - Blindage électrostatique ou magnétique
H01G 4/232 - Bornes pour la connexion électrique d'au moins deux couches d'un condensateur à empilement ou à enroulement
Disclosed herein is a gas sensor that includes first and second heaters, a first thermosensitive element that varies in temperature in accordance with a change in a temperature of the first heater, a second thermosensitive element that varies in temperature in accordance with a change in a temperature of the second heater, and a control circuit configured to calculate a concentration of a gas to be measured. The first and second heaters are heated to a first temperature zone and a second temperature zone higher than the first temperature zone, respectively, during gas concentration measurement. The temperature change directions of the first and second thermosensitive elements with respect to an increase in the concentration of the gas to be measured are opposite to each other during the gas concentration measurement.
An R-T-B based permanent magnet contains 28.0 mass % or more and 31.5 mass % or less light rare earth element in total, more than 0 mass % and 1.0 mass % or less heavy rare earth element in total, 0.97 mass % or more and 1.05 mass % or less B, 0.05 mass % or more and 0.52 mass % or less Al, 0.50 mass % or more and 0.75 mass % or less Zr, 0 mass % or more and 0.20 mass % or less Ga, and 0 mass ppm or more and 1000 mass ppm or less O. The R-T-B based permanent magnet has a coercivity of 715 kA/m or more at 160° C.
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
B22F 3/16 - Compactage et frittage par des opérations successives ou répétées
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 9/02 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
C22C 33/02 - Fabrication des alliages ferreux par des techniques de la métallurgie des poudres
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C22C 38/06 - Alliages ferreux, p. ex. aciers alliés contenant de l'aluminium
C22C 38/10 - Alliages ferreux, p. ex. aciers alliés contenant du cobalt
C22C 38/14 - Alliages ferreux, p. ex. aciers alliés contenant du titane ou du zirconium
C22C 38/16 - Alliages ferreux, p. ex. aciers alliés contenant du cuivre
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
An R-T-B based permanent magnet contains 28.0 mass % or more and 31.5 mass % or less light rare earth element in total, more than 0 mass % and 1.0 mass % or less heavy rare earth element in total, 0.97 mass % or more and 1.05 mass % or less B, 0.05 mass % or more and 0.52 mass % or less Al, more than 0.50 mass % and 0.75 mass % or less Zr, 0 mass % or more and 0.20 mass % or less Ga, and 0 mass ppm or more and 1000 mass ppm or less O.
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
B22F 3/16 - Compactage et frittage par des opérations successives ou répétées
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 9/02 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
C22C 33/02 - Fabrication des alliages ferreux par des techniques de la métallurgie des poudres
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C22C 38/06 - Alliages ferreux, p. ex. aciers alliés contenant de l'aluminium
C22C 38/10 - Alliages ferreux, p. ex. aciers alliés contenant du cobalt
C22C 38/14 - Alliages ferreux, p. ex. aciers alliés contenant du titane ou du zirconium
C22C 38/16 - Alliages ferreux, p. ex. aciers alliés contenant du cuivre
The light detection element 100 includes a magnetic element 10 including a first ferromagnetic layer 1 and a second ferromagnetic layer 2 to which light is irradiated, and a spacer layer 3 sandwiched between the first ferromagnetic layer 1 and the second ferromagnetic layer 2, an upper electrode 11 in contact with the upper surface 1a of the first ferromagnetic layer 1, and a lower electrode 20 in contact with the lower surface 2a of the second ferromagnetic layer 2. The lower electrode 20 has a narrowed plan view shape of the connection region 22 including the portion 20a in contact with the second ferromagnetic layer 2 and includes a heat sink layer 13 having a thickness that functions as a heat sink, and the entire magnetic element 10 including the upper electrode 11 is covered with a thermal conductive insulating material 31.
An element body includes a side surface, a first end surface, and a second end surface opposing the first end surface. Each of first and second external electrodes includes a conductive resin layer including resin and a plurality of metal particles. The conductive resin layer included in the first external electrode includes a first portion located on a side surface and a second portion located on a first end surface, the second portion having a content ratio of the metal particle smaller than a content ratio of the metal particle in the first portion. The conductive resin layer included in the second external electrode includes a third portion located on the side surface and a fourth portion located on a second end surface, the fourth portion having a content ratio of the metal particle smaller than a content ratio of the metal particle in the third portion.
H01F 17/00 - Inductances fixes du type pour signaux
H01F 1/36 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux substances non métalliques, p. ex. ferrites sous forme de particules
A substrate processing device includes: a base part that receives a load; an upper jig plate that is provided with a heat source; a pressure application plate that is attached to the upper jig plate and that applies a pressure to a to-be-pressured object; and a support part that is interposed between the base part and the upper jig plate and that supports the upper jig plate for the base part. The support part includes support bodies formed from a ceramic-based material, and an air layer surrounding the support bodies.
An optical waveguide medium includes a substrate, ABX3 type ferroelectric thin film formed on the substrate, first dielectric thin film formed on the ABX3 type ferroelectric thin film, second dielectric thin film formed on the first dielectric thin film, and third dielectric thin film formed on the first dielectric thin film and second dielectric thin film. The first dielectric thin film, second dielectric thin film, and third dielectric thin film form a buried optical waveguide structure in which the second dielectric thin film is buried with the first dielectric thin film and third dielectric thin film. The refractive indexes of the first dielectric thin film and third dielectric thin film are lower than the refractive indexes of the ABX3 type ferroelectric thin film and second dielectric thin film.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
96.
DIELECTRIC THIN FILM DEPOSITED SUBSTRATE, DIELECTRIC THIN FILM DEPOSITED SUBSTRATE MANUFACTURING METHOD, OPTICAL WAVEGUIDE ELEMENT, AND OPTICAL MODULATION ELEMENT
Provided is a dielectric thin film deposited substrate which includes a single crystal substrate having a c-axis aligned in an in-plane direction and a dielectric thin film formed on and in contact with the single crystal substrate and in which the dielectric thin film is made of a lithium niobate film having a c-axis oriented in one in-plane direction. In the dielectric thin film deposited substrate, an angle formed between the c-axis direction of the single crystal substrate and the c-axis direction of the lithium niobate film is preferably 0.4° to 5°.
G02F 1/055 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr le matériau actif étant une céramique
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
G02F 1/03 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
G02F 1/355 - Optique non linéaire caractérisée par les matériaux utilisés
97.
MAGNETORESISTIVE ELEMENT AND MAGNETIC SENSOR COMPRISING SAME
A magnetoresistive element (1) comprises a magnetic free layer (6) whose magnetization direction changes upon application of an external magnetic field and in which magnetization has a vortex shape in a state in which an external magnetic field is not applied, a magnetic pinned layer (4) whose magnetization direction is pinned with respect to an external magnetic field, and a nonmagnetic layer (5) located between the magnetic free layer (6) and the magnetic pinned layer (4). The magnetic free layer (6), the magnetic pinned layer (4), and the nonmagnetic layer (5) are arranged in the Z-direction. The nonmagnetic layer (5) has a boundary surface (51) that is in contact with the magnetic free layer (6), and a portion of the magnetic free layer (6) is outside an outer periphery (53) of the boundary surface (51) as viewed from the Z-direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
NEGATIVE ELECTRODE FOR ZINC BATTERY, ZINC BATTERY, METHOD FOR MANUFACTURING NEGATIVE ELECTRODE FOR ZINC BATTERY, AND NEGATIVE ELECTRODE MATERIAL FOR ZINC BATTERY
A negative electrode for a zinc battery of the present invention includes a negative electrode mixture containing zinc oxide. In an X-ray diffraction pattern of the negative electrode mixture, the ratio (I002/I101) of the peak intensity (I002) of the (002) plane derived from the zinc oxide to the peak intensity (I101) of the (101) plane derived from the zinc oxide is 0.4 or more.
A solid electrolytic capacitor having high resistance to environmental changes is expected. This solid electrolytic capacitor comprises: a laminate 100 including a plurality of laminated solid electrolytic capacitor elements CE; an uppermost layer 20TOP fixed to a first surface of the laminate 100; and a lowermost layer 20BTM fixed to a second surface of the laminate 100. The uppermost layer 20TOP contains a first resin and a first glass cloth. The lowermost layer 20BTM contains a second resin and a second glass cloth.
The present embodiments can generally provide a magnetic write head structure with optimized gap current distribution to maximize the current-assisted areal density capacity (ADC) gain in hard-disk-drive storage devices. In a first example embodiment, a non-dual-write-shield (nDWS) write head can include a main pole (MP), a trailing shield (TS), and a write gap (WG) disposed between the MP and the TS. The write head can also include a side shield (SS), a leading shield (LS), and a write shield (WS). The write head can include a side gap (SG) between the MP and the SS on both sides of the MP tip, and a leading gap (LG) between the MP and the LS. The write head can also include a coil wrapped around the MP through a PP3 shield that is configured to direct a time-dependent write current to saturate magnetization of the MP.
