A coil device includes a winding section comprised of a wound wire, a core, and a terminal fitting attached to the flange portion. The core includes a winding core portion provided with the winding section and a flange portion formed at an end of the winding core portion in its axial direction. The terminal fitting includes a main body portion disposed on an outer end surface of the flange portion, a mounting portion continuing to the main body portion and bending from the outer end surface toward a mounting surface of the flange portion, and a wire connection portion continuing to the main body portion and bending from the outer end surface toward a side surface of the flange portion. The mounting portion includes a plurality of mounting pieces arranged with at least one gap. The main body portion is adhered on the outer end surface by adhesive.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
To prevent, in a magnetic sensor provided with an external magnetic body for collecting magnetic flux in a magnetism detection element, breakage of the external magnetic body. A magnetic sensor includes: a sensor chip having an element formation surface on which magnetism detection elements are formed, an external magnetic body having an end face positioned at the leading end of the longitudinal direction thereof and facing the element formation surface and side surfaces constituting the outer peripheral surface of the cross section thereof perpendicular to the longitudinal direction, and a protective resin at least partially covering the element formation surface and the side surfaces of the external magnetic body. This makes it possible to prevent breakage of the sensor chip and external magnetic body upon application of an external shock.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
To reduce the influence of disturbance noise in a magnetic sensor provided with an external magnetic body around which a compensation coil is wound. A magnetic sensor includes an external magnetic body that collects a magnetic field to be detected in a magnetosensitive element and a compensation coil. The compensation coil includes a solenoid part wound around the external magnetic body and lead-out parts C1 and C2 that connect both ends of the solenoid part respectively to connection pins P1 and P2. The lead-out part C2 passes through the inner diameter area of the solenoid part to be connected to the connection pin P2. This makes the second lead-out part unlikely to act as an antenna, which can reduce the influence of disturbance noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
4.
THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC CIRCUIT BOARD HAVING THE THIN FILM CAPACITOR
To provide a thin film capacitor having a pair of terminal electrodes capable of being disposed on the same plane. A thin film capacitor 1 includes a metal foil having a non-roughened center portion and a roughened upper surface, a dielectric film covering the roughened upper surface of the metal foil, an electrode layer contacting the non-roughened center portion of the metal foil through an opening formed in the dielectric film, and an electrode layer contacting the dielectric film without contacting the metal foil. A thickness of the center portion of the metal foil at a position overlapping the electrode layer is larger than a thickness thereof at a position overlapping the electrode layer.
1-aab-ccc (where Ln represents one or more elements selected from rare earth elements, Y, and Zr, and the subscripts a, b, and c satisfy the respective relationships a ≤ 0.30, 3.4 ≤ b ≤ 3.7, and c ≤ 0.25). For the Ln described above, at least La among the rare earth elements is selected, and the La accounts for 89.0 mol% or more of the Ln.
A coil component includes an element body formed by laminating a plurality of insulator layers, and a pillar part disposed in the element body and extending in a lamination direction of the plurality of insulator layers. The pillar part has a plurality of pillar members laminated in the lamination direction. Between the two pillar members in the lamination direction, a defining part that defines a contact surface between the two pillar members is provided. The defining part is formed of a material different from a material of the pillar part, and is disposed at edges of the two pillar members when viewed from the lamination direction.
H01F 5/04 - Dispositions des connexions électriques aux bobines, p. ex. fils de connexion
H01F 1/03 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité
A sensor including: a base material having a surface on which streaks are formed along a first direction in a plan view; and a conductive film pattern formed on or above the surface and configured to connect mutually different positions in an in-plane direction of the surface in a shape in which a length of a conductive path is longer than a length of a straight line connecting the different positions, in which in a plan view, the shape of the conductive film pattern comprises a shape in which each of straight lines parallel to the first direction passes across a conductive path center line of the conductive film pattern zero times or once but does not pass across the conductive path center line twice or more.
G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pressionTransmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
8.
SOFT MAGNETIC METAL POWDER, MAGNETIC CORE, AND MAGNETIC COMPONENT
A soft magnetic metal powder includes soft magnetic metal particles with a particle size of 5.0 μm or more. (y95/y50−y90/y50)/(0.95−0.90) is 20.0 or less, where y95 (μm) denotes D95, y90 (μm) denotes D90, and y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a particle size of 5.0 μm or more. A magnetic core includes soft magnetic metal particles with a Heywood diameter of 5.0 μm or more in a section of the magnetic core. (Y95/Y50−Y90/Y50)/(0.95−0.90) is 20.0 or less, where Y95 (μm) denotes D95, Y90 (μm) denotes D90, and Y50 (μm) denotes D50 of a particle size distribution of the soft magnetic metal particles with a Heywood diameter of 5.0 μm or more.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A coil component may include a core portion including soft magnetic metal particles and a resin and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include an axially central region and a coil corner neighboring region. The soft magnetic metal particles may include specific particles having a particle size of 10 μm or more and 50 μm or less. 0
A coil component may include a core portion including a soft magnetic metal material and a winding portion including a conductor wound. The winding portion may be inside the core portion. The core portion may include a central portion and an outer portion. The central portion may be disposed in an inside diameter portion of the winding portion. The outer portion may be disposed in a portion other than the central portion. The central portion may include a first central portion and a second central portion including different materials. The second central portion may be disposed around the first central portion. H, S, and S1 may be within specific ranges, where H denotes a height of the winding portion, S denotes a sectional area of the central portion, and S1 denotes a sectional area of the first central portion.
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes at least one selected from the group consisting of O, N, and F. A CV of Fe/(Fe+Co) of grids is 0.150 or more and 0.500 or less, provided that a measurement range is determined in the nanogranular magnetic film, the measurement range is divided with the grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm, and Fe/(Fe+Co) of each of the grids is measured in atomic ratio.
[Problem] To provide an electronic component with a structure that facilitates dispersion of stress applied to terminal electrodes from the outside. [Solution] An electronic component 100 includes terminal electrodes E1, E2 located in a conductor layer 71 in a base body 110 and exposed from an outer surface 111, and a coil C1 at least a part of which is located in a conductor layer 74 in the base body 110, one end of which is connected to the terminal electrode E1 via a via conductor 81V, and the other end of which is connected to the terminal electrode E2 via a via conductor 84V. The via conductor 81V has a shape with a diameter that narrows toward the terminal electrode E1, and the via conductor 84V has a shape with a diameter that narrows toward the terminal electrode E2.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
[Problem] To improve insulation between coils in an electronic component having a structure in which a plurality of coils are embedded in an element body that contains a magnetic material. [Solution] A coil component 100 comprises: conductor layers L1-L3 which are embedded in a coil-embedding layer 10A of an element body 10; conductor bumps B1-B4 which are embedded in a bump-embedding layer 10B of the element body 10; and an insulating coating layer 19 which covers a mounting surface 15 of the element body 10 without covering at least some of the conductor bumps B1-B4. The element body 10 includes a magnetic material portion 17 comprising a magnetic material, and a resin material portion 18 comprising a resin material. The resin material portion 18 is positioned between the conductor layers L1-L3 and the magnetic material portion 17. The side faces 11-14 of the element body 10 include a region A comprising the coil-embedding layer 10A and a region B comprising the bump-embedding layer 10B. The conductor layers L1-L3 are embedded in the element body 10 without being exposed from the region A.
This magnetized rotary element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which electrical conductors are dispersed.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
A coil component includes an element body, a first terminal electrode, a second terminal electrode, a first conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode, and a second conductor disposed at a position closer to a principal surface in the element body and electrically connected to the first terminal electrode and the second terminal electrode. The element body is formed of a material having light permeability, and an identification portion formed of a material different from a material of the first conductor is provided on a first surface facing the principal surface in the first conductor.
A soft magnetic metal particle may include a core particle and an insulation coating formed on a surface of the core particle. The insulation coating may include a first layer, a second layer, and a third layer. The first layer may contact the surface of the core particle, and the second layer may contact the first layer and the third layer. The first layer may include at least Fe, the second layer may include at least Ti, and the third layer may include at least Si.
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
B22F 1/17 - Particules métalliques revêtues de métal
A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes a second phase compound including at least one selected from the group consisting of O, N, and F. A measurement range is determined in the nanogranular magnetic film. The measurement range is divided with grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm. Fe/(Fe+Co) and a concentration of the second phase compound of each of the grids are measured in atomic ratio. Provided that the grids are classified into MX-rich grids and MX-poor grids, a CV of Fe/(Fe+Co) of the MX-rich grids is larger than a CV of Fe/(Fe+Co) of the MX-poor grids.
The present embodiments relate to a PMR write-head structure where the spin-orbit torque (SOT) material is in contact with the main pole in the write gap (WG). In addition, with the write shield (WS) electrically isolated from the side shield (SS) in the present designs, the current can be confined in the SOT material near the main pole, and the device resistance can remain within a reasonable range. It can be shown, using simulations, that the main pole switching rise time can be improved by 18˜24% using spin-orbit torque from heavy metals like platinum.
A magnetoresistance effect element according to the present invention comprises: a substrate; a base layer that is provided on the substrate; and a laminated portion that is provided on the base layer and that comprises a magnetization free layer, a reference layer, and a non-magnetic layer provided between the magnetization free layer and the reference layer. The base layer comprises two or more metal nitride layers, and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/53 - Multiplication uniquement en mode parallèle-parallèle, c.-à-d. les deux opérandes étant introduits en parallèle
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
A multilayer coil component includes: an element body having a pair of first side surfaces opposite to each other in a first direction and a pair of second side surfaces opposite to each other in a second direction orthogonal to the first direction; and a coil disposed inside the element body and having a coil axis extending in a third direction orthogonal to the first direction and the second direction, in which one of the pair of first side surfaces is a mounting surface, and a ratio of a first gap in the first direction between the coil and the mounting surface to a size of the element body in the first direction is 12 to 30% in a cross section viewed in the third direction.
A magnetic sensor device includes a magnetic sensor and a processor. Each of a plurality of detection circuits of the magnetic sensor includes a magnetoresistive (MR) element. The MR element includes a free layer having a magnetic vortex structure and configured so that the center of the magnetic vortex structure moves depending on a target magnetic field. The plurality of detection circuits are configured to generate a plurality of detection signals each of which changes periodically with periodic changes in the direction of the target magnetic field and whose amplitude changes with a change in the strength of the target magnetic field. The processor is configured to generate an angle detection value and a strength detection value based on the plurality of detection signals.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
An antenna device is an antenna device including a mesh-shaped conductor pattern having a plurality of mesh portions, in which the conductor pattern includes a plurality of first electroconductive lines extending in a first direction and a plurality of second electroconductive lines extending in a second direction intersecting the first direction, an opening and a slit extending from the opening to an edge of the conductor pattern are formed in the conductor pattern as a region where the first electroconductive lines and the second electroconductive lines are not formed, a width of the slit is smaller than a width of the opening, and at least a part of the mesh portions arranged at an edge of the slit is opened to the slit.
Disclosed herein is a coil component that includes plural conductor layers embedded in the magnetic element body. Each of the conductor layers includes a coil pattern, and first and second connection patterns exposed from the magnetic element body. The conductor layers includes a first conductor layer positioned at one end portion in the stacking direction, a second conductor layer positioned at the other end portion in the stacking direction, and one or more third conductor layers positioned between the first and second conductor layers. In the second conductor layer, an outer peripheral end of the coil pattern is connected to the second connection pattern through a lead-out pattern. In at least one of the first to third conductor layers, the magnetic element body is disposed in a separation area overlapping the lead-out pattern in the stacking direction.
An example system includes an array of input nodes that includes a first input node and a second input node. The system also includes a set of multiply accumulate compute (MAC) components coupled to the first and second input nodes and configured to multiply and accumulate the first analog output and the second analog output. The system further includes a classification component coupled to an output of the set of MAC components and configured to classify the outputs of the set of MAC components. The first input node includes a first sensor configured to output a first analog signal according to changes in an external environment and a first analog frontend configured to generate a first analog output corresponding to the first analog signal. The second input node includes a second sensor and a second analog frontend configured to generate a second analog output corresponding to the second analog signal.
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
A switching mechanism is provided. The switching mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move. The switching mechanism can further include a sensing assembly configured to detect the condition of the movable portion. The sensing assembly includes a first reference object and a first sensing member. The first sensing member corresponds to the first reference object, and the first reference object is adjacent to the first sensing member when the movable portion is in a first condition.
This negative electrode active material layer may contain a negative electrode active material and a fibrous material. The negative electrode active material may contain silicon. The fibrous material may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The fiber length of the fibrous material may be 20 μm or more and 150 μm or less. The value obtained by dividing a thickness of the negative electrode active material layer by the fiber length may be 0.4 or more and 1.0 or less.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
28.
ELECTRONIC COMPONENT AND SUBSTRATE WITH BUILT-IN ELECTRONIC COMPONENT
[Problem] To provide an electronic component suitable for being built in a substrate for use. [Solution] An electronic component 10 includes a magnetic element body 20 and a metal frame 30 embedded in the magnetic element body 20. The metal frame 30 includes: sections 31 and 32 which are substantially parallel to each other; a section 33 which connects one end of the section 31 and one end of the section 32; a section 34 which is connected to the other end of the section 31 and at least a part of which is exposed from a main surface 21 of the magnetic element body 20; and a section 35 which is connected to the other end of the section 32 and at least a part of which is exposed from a main surface 22 of the magnetic element body 20.
[Problem] To effectively suppress the concentration of an electric field caused when a reverse voltage is applied in a semiconductor device that has a structure in which an outer peripheral trench is provided in a drift layer. [Solution] A semiconductor device 1 comprises a semiconductor substrate 20, a drift layer 30 provided on the semiconductor substrate 20, an anode electrode 40 in contact with the drift layer 30, and a cathode electrode 50 in contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 61 which is provided so as to surround the anode electrode 40 in plan view without overlapping the anode electrode 40 in plan view, an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and which is provided outside the outer peripheral trench 61 so as to surround the outer peripheral trench 61 in plan view, and a mesa region 311 which is positioned between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is less than the width Wt1 of the outer peripheral trench 61.
An antenna includes a radiation conductor having a circular shape, a feed line configured to feed power to the radiation conductor, and a terminal connected to the feed line, in which impedance of the feed line is greater than impedance of a feed point of the terminal, and a line length of the feed line is longer than a radius of the radiation conductor.
A battery includes an exterior can, an electrode group housed together with an alkaline electrolyte in the exterior can, and a sealing member that seals the exterior can. The electrode group is formed by winding a positive electrode and a negative electrode stacked together with a separator interposed therebetween into a spiral shape and has a columnar overall shape. A protruding negative electrode edge portion that is a partially protruding portion of the negative electrode is located at a lower end surface portion of the electrode group, and the protruding negative electrode edge portion is in direct contact with the inner surface of a bottom wall of the exterior can.
H01M 50/107 - Boîtiers primairesFourreaux ou enveloppes caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p. ex. ronde ou elliptique
H01M 50/128 - Boîtiers primairesFourreaux ou enveloppes caractérisés par le matériau ayant une structure en couches comprenant au moins trois couches dont au moins deux couches de matériaux inorganiques uniquement
H01M 50/179 - Dispositions pour introduire des connecteurs électriques dans ou à travers des boîtiers adaptées à la forme des cellules pour des cellules ayant une section transversale courbée, p. ex. ronde ou elliptique
H01M 50/188 - Éléments de scellement caractérisés par la position des éléments de scellement les éléments de scellement étant arrangés entre le couvercle et la borne
H01M 50/528 - Connexions électriques fixes, c.-à-d. non prévues pour être déconnectées
H01M 50/533 - Connexions d’électrodes dans un boîtier de batterie caractérisées par la forme des conducteurs ou des languettes
Electronic device member comprises a first substrate, at least one protruding portion that protrudes from the first substrate, and a solder layer, wherein the at least one protruding portion includes at least one side surface, a tip surface, and a connection portion between the at least one side surface and the tip surface, and wherein the solder layer is in contact with the tip surface. At the connection portion, the at least one side surface and the tip surface form obtuse angle.
An electronic component includes: a substrate; a plurality of multilayer capacitors mounted on a first main surface of the substrate; and a sealing part formed of a resin and sealing the plurality of multilayer capacitors. A first external electrode and a second external electrode of the multilayer capacitor are mounted on the substrate by solder. At least a part of adjacent multilayer capacitors overlaps each other when viewed from a direction in which a pair of side surfaces of an element body are opposed to each other, the direction being along the first main surface of the substrate. In the adjacent multilayer capacitors, stacking directions of a plurality of internal electrodes are the same, and a distance between the adjacent multilayer capacitors is ½ or less of a height of the multilayer capacitor mounted on the substrate.
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; a dielectric layer provided between the first metal layer and the second metal layer in the first direction; and a protective layer covering a surface of the second metal layer opposite to the dielectric layer. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. The protective layer is made of a metal having a standard electrode potential higher than that of a metal constituting the second metal layer.
G02B 27/18 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour projection optique, p. ex. combinaison de miroir, de condensateur et d'objectif
35.
METASURFACE REFLECTOR, PROJECTION DEVICE, AND NEAR-EYE WEARABLE DEVICE
A metasurface reflector includes: a first metal layer and a second metal layer stacked in a first direction; and a dielectric layer provided between the first metal layer and the second metal layer in the first direction. The dielectric layer includes a main surface on which the second metal layer is provided. The metasurface reflector is divided into a plurality of unit regions arranged in a second direction along the main surface and in a third direction along the main surface and intersecting the second direction. The second metal layer includes metal units respectively provided in all or some of the plurality of unit regions. Lengths of metal units, which are arranged in the second direction and set for a same wavelength among the metal units, in the second direction are different from each other.
An example battery system includes one or more battery packs. The battery system further includes a first sensor configured to detect a first property of the battery system and one or more second sensors configured to detect one or more second properties of the battery system. The battery system also includes control circuitry coupled to the one or more second sensors. The control circuitry is configured to detect a potential risk of thermal runaway of the one or more battery packs based on the detection of the one or more second properties, and, in response to detecting the potential risk of thermal runaway, activate the first sensor. The control circuitry is further configured to identify an increased risk of thermal runaway based on detection of the first property of the battery system, and, in response to identifying the increased risk of thermal runaway, disable the battery system.
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
[Problem] To effectively suppress concentration of an electrical field which is generated when a reverse voltage is applied in a semiconductor device having a structure in which an outer peripheral trench is provided to a drift layer. [Solution] A semiconductor device 1 comprises: a semiconductor substrate 20; a drift layer 30 which is provided on the semiconductor substrate 20; an anode electrode 40 which is in contact with the drift layer 30; and a cathode electrode 50 which is in contact with the semiconductor substrate 20. The drift layer 30 has: an outer peripheral trench 61 which is provided along an outer edge 41 of the anode electrode 40 in a manner as to overlap with the outer edge 41 in a plan view; an outer peripheral trench 62 which is adjacent to the outer peripheral trench 61 and is provided at the outer side of the outer peripheral trench 61 in a manner as to surround the outer peripheral trench 61 in the plan view; and a mesa region 311 which is located between the outer peripheral trench 61 and the outer peripheral trench 62. The width Wm1 of the mesa region 311 is narrower than the width Wt1 of the outer peripheral trench 61.
This battery includes: an electrical storage element with positive and negative electrodes and insulating film between the positive and negative electrodes and electrically separates the positive and negative electrodes; and an airtight case housing the electrical storage element, wherein the case includes: a first member having bottom and tubular portions; a second member having a lid-like portion covering an opening of the first member and a surrounding wall portion covering the tubular portion from an outside; and a gasket between an end face of the first member and the second member and between the tubular portion and the second member, and wherein a non-contact portion with which the gasket is not in contact is provided in either one or both of a part of a first surface of the first member that faces the gasket and a part of a second surface of the second member that faces the gasket.
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
A current collector including: a resin layer having first and second surfaces on opposites sides; and a metal layer including copper. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The yield stress σY1 [MPa] is obtained by expressions (1) and (2) from a resin layer yield stress σY2 [MPa], a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a thickness D3 [μm] of the metal layer:
σ
Y
1
=
A
×
σ
Y
3
+
(
1
-
A
)
×
σ
Y
2
(
1
)
A
=
D
3
/
(
D
2
+
D
3
)
.
(
2
)
The yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer
σ
Y
3
=
(
-
103
+
1
6
44
×
√
β
)
.
(
3
)
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
An element body includes a main surface and a pair of end surfaces. Each external electrode includes a conductive resin layer on the main surface. Each auxiliary internal electrode is disposed in the same layer as a corresponding internal electrode of a plurality of internal electrodes and is electrically connected to the external electrode to which the corresponding internal electrode is not electrically connected. Each auxiliary internal electrode includes first and second electrode portions. The first electrode portion is exposed to a corresponding end surface of the pair of end surfaces and is electrically and physically connected to the external electrode to which the corresponding internal electrode is not electrically connected. The second electrode portion is positioned between the conductive resin layer of the external electrode to which the corresponding internal electrode is not electrically connected and the corresponding internal electrode.
An electronic component includes an element body including a side surface and an external electrode disposed on the side surface. The external electrode includes a conductive resin layer. The conductive resin layer is formed with a ridge extending along at least one direction on the side surface. The conductive resin layer includes a region, on the side surface, having a thickness smaller than a thickness at the ridge.
Disclosed herein is an antenna device that includes a coil pattern having first to third winding parts each having a plurality of turns. The first winding part has an outer peripheral end being opened and an inner peripheral end connected to an outer peripheral end of the second winding part. The second winding part has an inner peripheral end connected to an outer peripheral end of the third winding part. The third winding part has an inner peripheral end being opened. Each turn of the second winding part has a first partial winding part wound concentrically with the third winding part and a second partial winding part protruding radially outward from the first partial winding part and wound about a center axis positioned between the first partial winding part and the first winding part.
A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
The present embodiments relate to a write head design with a patterned hot seed (HS). Particularly, the HS can be patterned as part of a multi-step patterning process that can partially or completely remove portions of the HS at multiple sides to form various designs. For example, the HS can have a two-step cliff design, etching multiple steps around an un-patterned center portion, and a flared angle. The designs of the patterned HS can improve write head performance.
The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
A current collector including: a resin layer having first and second surfaces; and a metal layer including aluminum. The metal layer includes a first metal layer located on a side of the first surface of the resin layer. A yield stress σY1 of the current collector is smaller than a tensile fracture stress σB2 of the resin layer. The current collector yield stress σY1 [MPa] is obtained by the following expressions (1) and (2) from a yield stress σY2 [MPa] of the resin layer, a resin layer thickness D2 [μm], a yield stress σY3 [MPa] of the metal layer, and a metal layer thickness D3 [μm].
σY1=A×σY3+(1−A)×σY2 (1)
A=D3/(D2+D3) (2)
The metal layer yield stress σY3 [MPa] is obtained by the following expression (3) from a half-value width β [°] of an X-ray diffraction peak having the highest intensity in an X-ray diffraction pattern of the metal layer.
σY3=(−259+1285×√β) (3)
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
An equivalent circuit includes a first capacitor having a first capacitance, a circuit part configured to include an inductor component, a capacitor component, and a resistor connected in series with one another, the circuit part being connected in parallel with the first capacitor, and a second capacitor provided between the first capacitor and the circuit part and having a second capacitance. The first capacitance of the first capacitor changes in accordance with a voltage value of a direct current voltage applied to the first capacitor. The second capacitor has the positive second capacitance that changes in accordance with the voltage value of the direct current voltage applied to the first capacitor and that is N times (N>0) the first capacitance of the first capacitor.
Disclosed herein is an antenna device that includes: a metal plate having a first slit extending in a long side direction thereof and a second slit extending in a short side direction thereof; a first coil disposed so as to overlap with the metal plate in a plan view and circling along an outer edge of the metal plate; and a second coil electrically connected to the first coil, disposed so as to be surrounded by the first coil, and disposed so as to overlap with the first slit. The first slit has a first end that is open to divide the outer edge and a second end terminating without reaching the outer edge. The second slit has a third end that is open to divide the outer edge and a fourth end terminating without reaching the outer edge.
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has an opening; a conductive layer which is formed in the opening of the insulating layer; and a barrier layer which covers the conductive layer. At least the outer surface of the barrier layer has a shape which has one peak that protrudes upward.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
This electronic component includes: a base material which has a main surface; an insulating layer which is disposed on the main surface of the base material and has a level difference part; a conductive layer which is formed on the level difference part of the insulating layer; and a barrier layer which covers the conductive layer. A surface of the conductive layer, which corresponds to the level difference part, has an inclination.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Inoue, Yukari
Terada, Tomohiro
Kimura, Junichi
Uehara, Masato
Hirata, Kenji
Yamada, Hiroshi
Akiyama, Morito
Abrégé
A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.
C01B 21/06 - Composés binaires de l'azote avec les métaux, le silicium ou le bore
H10N 30/076 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par dépôt de couches piézo-électriques ou électrostrictives, p. ex. par impression par aérosol ou par sérigraphie par dépôt en phase vapeur
An electronic component includes an element body and a plurality of inductors disposed in the element body. The plurality of inductors include an inductor unit, an inductor unit, and an inductor unit. Each of the inductor unit, the inductor unit, and the inductor unit has two conductors extending in one direction and a connection conductor connecting respective one ends of the two conductors in the one direction. Respective axial directions of the inductor unit, the inductor unit, and the inductor unit do not overlap each other and are parallel to each other when viewed from the one direction.
This negative electrode active material layer may contain a negative electrode active material and acicular particles. The negative electrode active material may contain silicon. The acicular particles may contain at least one kind selected from the group consisting of titanium oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide, The length of the minor axis of each of the acicular particles may be 0.1 μm or more and 0.5 μm or less. The aspect ratio of each of the acicular particles may be 1.2 or more and 15.0 or less.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing is processing for correcting the first initial detection value and updating the first initial detection value. The second correction processing is processing for correcting the second initial detection value and updating the second initial detection value. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
This irreversible circuit element comprises a conductor, a magnetic body, and an absorber. The conductor is provided with a first terminal and a second terminal, and has a first region that overlaps the magnetic body when viewed from the thickness direction and extends across the first terminal and the second terminal, and a second region that overlaps the absorber when viewed from the thickness direction. The conductor also has recesses and protrusions on the outer periphery when viewed from the thickness direction, and at least some of the recesses and protrusions are located in the second region.
A magnet temperature information output device includes a first element provided on a rotor, a second element provided on a stator, an electric resistance element, and an output section. The first element includes a temperature sensitive element and a first coil. In the temperature sensitive element, electric resistance changes responding to a temperature of the permanent magnet. The first coil is electrically connected to the temperature sensitive element. The second element includes a second coil. The second coil is arranged to be magnetically coupled to the first coil. The electric resistance element is electrically connected to the second element. The output section is electrically connected to the second element and the electric resistance element. The output section is arranged to output an electric signal responding to a magnitude of a voltage drop occurring in the electric resistance element as temperature information regarding the temperature of the permanent magnet.
An ultrasonic transducer array including a substrate, a membrane overlying the substrate, the membrane configured to allow movement at ultrasonic frequencies, and a plurality of anchors connected to the substrate and connected to the membrane. The membrane includes a piezoelectric layer, a plurality of first electrodes, and a plurality of second electrodes, wherein each ultrasonic transducer of a plurality of ultrasonic transducers includes at least a first electrode and at least a second electrode. The plurality of anchors includes a first anchor including a first electrical connection for electrically coupling at least one first electrode to control circuitry and a second anchor including a second electrical connection for electrically coupling at least one second electrode. The ultrasonic transducer array could be either a two-dimensional array or a one-dimensional array of ultrasonic transducers.
G06F 3/043 - Numériseurs, p. ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
A61B 8/00 - Diagnostic utilisant des ondes ultrasonores, sonores ou infrasonores
B06B 1/02 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique
B06B 1/06 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique fonctionnant par effet piézo-électrique ou par électrostriction
09 - Appareils et instruments scientifiques et électriques
Produits et services
Electric sensors, electronic sensors, piezo-based materials, and components or devices thereof incorporating the same, capable of providing haptics, tactile or audio feedback for use in electronic or magnetic cards in connection with payment of services, or for use in encoded electronic, magnetic or smart cards containing programming used to protect data, documents and identities, or for use as encoded credit and debit cards
A multilayer feedthrough capacitor includes an element body, a pair of first external electrodes, a second external electrode, and a plurality of internal electrodes. The plurality of internal electrodes include at least one first internal electrode connected to the pair of first external electrodes, at least one second internal electrode connected to the pair of first external electrodes, and at least one third internal electrode connected to the second external electrode. The at least one first internal electrode is connected to the pair of first external electrodes with a first connection width, and the at least one second internal electrode is connected to the pair of first external electrodes with a second connection width larger than the first connection width.
A magnetic sensor includes first to third structural bodies having a structure for a magnetic detection element to detect a target magnetic field at first to third positions away from a reference axis, respectively, and first to third detection circuits including first to third magnetic detection elements, respectively. The second position is a position rotated from the first position by (120+360×m)° circumferentially about the reference axis. The third position is a position rotated from the first position by (240+360×n)° circumferentially about the reference axis.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A retinal projection device includes: a switching unit capable of switching an optical path of a beam; a combiner that converts the beam into parallel light; and a notch filter that passes circularly polarized light with a first polarity in light of the red wavelength, passes circularly polarized light with the second polarity in light of the green wavelength, and passes circularly polarized light with the first polarity in light of the blue wavelength. The combiner includes: a first holographic diffraction layer that diffracts circularly polarized light with the first polarity in a first wavelength range including the red wavelength; a second holographic diffraction layer that diffracts circularly polarized light with the second polarity in a second wavelength range including the green wavelength; and a third holographic diffraction layer that diffracts circularly polarized light with the first polarity in a third wavelength range including the blue wavelength.
A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.
The present disclosure provides a laser diode and a method for preparing a stacked high-density laser diode array. The laser diode includes a substrate and a stack layer, where the stack layer includes a P-type layer with a ridge strip; the laser diode is provided with a waveguide surface, a light output surface, a reflective surface, and a bottom surface; a top side of the P-type layer forms the waveguide surface, and a bottom side of the substrate forms the bottom surface; the waveguide surface is provided opposite to the bottom surface; the bottom surface is provided with at least one groove; an extension direction of the groove is perpendicular to the ridge strip; and edges of two sides of the waveguide surface, the light output surface, and the reflective surface are all coated.
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
65.
SURFACE ROUGHNESS EVALUATION METHOD AND DEVICE THEREFOR, SURFACE ROUGHNESS EVALUATION PROGRAM, AND STORAGE MEDIUM STORING SURFACE ROUGHNESS EVALUATION PROGRAM
The present invention evaluates non-uniformity of roughness of a surface. The present disclosure involves: acquiring local histogram information indicating a relationship between an amount and frequency of surface irregularities for each local measurement region; generating multiple sets of cumulative histogram information by accumulating n pieces of local histogram information from the first local histogram information progressively; defining, as reference cumulative histogram information, cumulative histogram information generated by accumulating the maximum number of N pieces of local histogram information; detecting a degree of similarity of each cumulative histogram information to the reference cumulative histogram information; and using the smallest n, for which the detected degree of similarity is equal to or greater than a predetermined threshold value, as a part of an index indicating non-uniformity of surface roughness.
G01B 21/30 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la rugosité ou l'irrégularité des surfaces
66.
IRREVERSIBLE CIRCUIT ELEMENT AND METHOD OF MANUFACTURING IRREVERSIBLE CIRCUIT ELEMENT
An irreversible circuit element includes: a housing; a plurality of irreversible circuit plates accommodated in the housing; and a plurality of terminals connected to an outer surface of the housing, the plurality of irreversible circuit plates are arranged such that the adjacent irreversible circuit plates face each other, each of the plurality of irreversible circuit plates includes a metal layer, a first insulating layer, a loss layer, and a first magnetic field applying layer laminated in sequence in a thickness direction, each of the plurality of irreversible circuit plates transmits a signal irreversibly between a first end and a second end, and the first end and the second end of each of the plurality of irreversible circuit plates are connected to different terminals of the plurality of terminals.
An environment in which a control device for controlling a controlled object can easily be verified. This verification system includes: a simulator for simulating an operating state of the controlled object; and a dummy device for generating a second signal relating to the controlled object instead of the simulator or the controlled object, in accordance with a first signal provided from a control device capable of controlling the controlled object, and providing the generated second signal to the control device or the simulator. The simulator generates a third signal indicating the simulated operating state of the controlled object on the basis of the second signal provided from the dummy device.
G05B 19/05 - Automates à logique programmables, p. ex. simulant les interconnexions logiques de signaux d'après des diagrammes en échelle ou des organigrammes
An electronic component includes a stack, a second inductor, and a shield conductor. The shield conductor includes a first conductor part provided on a side surface of the stack and a second conductor part provided on a side surface of the stack. A first end of a conductor layer of the second inductor is located at a position closer to the first conductor part. A second end of the conductor layer is located at a position closer to the second conductor part. Spacing between the first end and the first conductor part is greater than spacing between the second end and the second conductor part.
An electronic component includes a stack, a first inductor, a second inductor, a third inductor, and a shield conductor. The shield conductor includes a first conductor part provided on a side surface of the stack and a second conductor part provided on a side surface of the stack. The electronic component further includes a first connecting conductor that connects two columnar conductors of the first inductor and the first conductor part, a second connecting conductor that connects two columnar conductors of the second inductor and the second conductor part, and a third connecting conductor that connects two columnar conductors of the third inductor and the first conductor part.
A retinal projection device includes: a projector module including a laser module that emits laser light, a collimation lens that converts the laser light into a parallel beam, and a movable mirror that performs scanning by the beam; a projection lens that focuses the beam emitted from the projector module at a focusing position; an optical unit including a deflector, which changes a traveling direction of the beam, arranged so as to overlap the focusing position; an optical device that converts the beam into parallel light and irradiate a retina of a user with the parallel light; and a controller that adjusts the traveling direction of the beam by the deflector in accordance with a position of a pupil of the user.
Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode and a p-type semiconductor layer each contacting the drift layer, an n-type semiconductor layer contacting the anode electrode and the drift layer, a metal layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and a cathode electrode contacting the semiconductor substrate.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
72.
Optimizing A Current Distribution In Write Heads For Efficient Energy-Assisted Magnetic Recording
The present embodiments can generally provide a magnetic write head structure with optimized gap current distribution to maximize the current-assisted areal density capacity (ADC) gain in hard-disk-drive storage devices. In a first example embodiment, a non-dual-write-shield (nDWS) write head can include a main pole (MP), a trailing shield (TS), and a write gap (WG) disposed between the MP and the TS. The write head can also include a side shield (SS), a leading shield (LS), and a write shield (WS). The write head can include a side gap (SG) between the MP and the SS on both sides of the MP tip, and a leading gap (LG) between the MP and the LS. The write head can also include a coil wrapped around the MP through a PP3 shield that is configured to direct a time-dependent write current to saturate magnetization of the MP.
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
73.
FEATURE AMOUNT EVALUATION METHOD, DEVICE AND SYSTEM THEREFOR, FEATURE AMOUNT EVALUATION PROGRAM, AND STORAGE MEDIUM STORING FEATURE AMOUNT EVALUATION PROGRAM
This invention evaluates the non-uniformity of a feature amount. In the present disclosure: local histogram information indicating a relationship between a feature amount and a frequency is obtained for each local sample range; n pieces of local histogram information are accumulated, starting from the first piece, to generate a plurality of cumulative histogram information pieces; the accumulated and generated cumulative histogram information pieces, with N being the maximum number, are used as reference cumulative histogram information; the degree of similarity to the reference cumulative histogram information of each piece of cumulative histogram information is detected; and a minimum n at which the detected degree of similarity is at least a predetermined threshold is used as part of an index indicating the non-uniformity of the feature amount.
G01B 21/30 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la rugosité ou l'irrégularité des surfaces
This soft magnetic alloy contains Fe, Co, and at least one selected from among M and X. M is at least one selected from among Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W. X is at least one selected from among Si, B, C and P. A volume ratio of a portion in which both the content of Fe and the total content of M and X fall within specific ranges have a specific relationship with a volume ratio of a portion in which both the content of Co and the total content of M and X fall within specific ranges
When straight lines that are parallel to first to fourth long axes A1 to A4, that have the origin as their ends, and that pass through the first to fourth quadrants are defined as first to fourth imaginary lines B1 to B4, and the angles that the first to fourth imaginary lines make counterclockwise with respect to the boundary line between the first and fourth quadrants are θ1 to θ4, respectively, θ1 is greater than or equal to 0 degrees and less than or equal to 90 degrees, θ2 is greater than or equal to 90 degrees and less than or equal to 180 degrees, θ3 is greater than or equal to 180 degrees and less than or equal to 270 degrees, and θ4 is greater than or equal to 270 degrees and less than or equal to 360 degrees.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
Disclosed herein is an antenna device that includes a magnetic body having a through hole, and a coil pattern including a first winding part and a second winding part overlapping the through hole of the magnetic body. The through hole of the magnetic body includes first and third inner peripheral edges each including a section extending in a first direction and positioned opposite to each other and second and fourth inner peripheral edges each including a section extending in a second direction perpendicular to the first direction and positioned opposite to each other. The second winding part includes an inner peripheral side part wound along the first to fourth inner peripheral edges and an outer peripheral side part positioned outside the inner peripheral side part and wound along the second to fourth inner peripheral edges without being along the first inner peripheral edge.
H01Q 7/00 - Cadres ayant une distribution du courant sensiblement uniforme et un diagramme de rayonnement directif perpendiculaire au plan du cadre
G06K 19/07 - Supports d'enregistrement avec des marques conductrices, des circuits imprimés ou des éléments de circuit à semi-conducteurs, p. ex. cartes d'identité ou cartes de crédit avec des puces à circuit intégré
G06K 19/077 - Détails de structure, p. ex. montage de circuits dans le support
An electronic component includes an element body and an external electrode disposed on the element body. The external electrode includes a conductive resin layer. The conductive resin layer includes a silver. The electronic component includes an oxide disposed in front of an end edge of the conductive resin layer. The oxide is in contact with the element body.
A laser module includes: a first laser element having a first emission port that emits first laser light; and a second laser element having a second emission port that emits second laser light. The first laser element and the second laser element are disposed such that the first laser light and the second laser light overlap each other.
In a power conversion device, a control circuit sets an output voltage of a boost converter to a first output voltage level or a second output voltage level in accordance with a voltage corresponding to the input voltage, causes an electric current resonant converter to operate in a full-bridge mode as an operating mode when the first output voltage level has been set, and causes the electric current resonant converter to operate in a half-bridge mode as an operating mode when the second output voltage level has been set. The first output voltage level or the second output voltage level is set at a predetermined timing after the input voltage is input and a set operating mode is maintained until a process of setting the first output voltage level or the second output voltage level is reset.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/42 - Circuits ou dispositions pour corriger ou ajuster le facteur de puissance dans les convertisseurs ou les onduleurs
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
80.
THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC CIRCUIT BOARD HAVING THE THIN FILM CAPACITOR
To provide a thin film capacitor having a large capacitance. A thin film capacitor includes a metal foil having roughened main surfaces, a dielectric film covering the main surfaces, an electrode layer contacting the metal foil through an opening formed in the dielectric film and having a surface formed as a metal terminal, an electrode layer contacting the dielectric film without contacting the metal foil and having a surface formed as a metal terminal, and an electrode layer contacting the dielectric film without contacting the metal foil. The electrode layers include a conductive polymer layer contacting the dielectric film.
A multilayer coil component includes an element body, a coil in the element body, a connection conductor in the element body, and an external electrode on the element body. The element body includes a principal surface arranged to constitute a mounting surface and an end surface positioned adjacent to the principal surface. The connection conductor includes one end connected to the coil and another end connected to the external electrode. The external electrode includes a sintered metal layer formed on the element body and a conductive resin layer formed on the sintered metal layer. The sintered metal layer includes a portion on the principal surface and a portion on the end surface. The portion on the principal surface has an average thickness smaller than an average thickness of the portion on the end surface.
A wiring body includes a first resin layer having a first main surface and a second main surface and having a through hole passing from the first main surface to the second main surface, an electroconductive layer disposed in the through hole, and a first adhesive layer covering the first resin layer and the electroconductive layer from the first main surface side.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p. ex. neurone
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort
[Problem] To enhance dissipation of heat generated from an electronic component in a substrate in which the electronic component is embedded. [Solution] An electronic component-embedded substrate 100 comprises: a core layer 110 having a through-hole 113 and a plurality of through-hole conductors 114; and an electronic component 10 accommodated in the through hole 113. The electronic component 10 has side surfaces 23-26 and terminal electrodes 31-34. The plurality of through-hole conductors 114 include: a through-hole conductor group TH1 including an arrangement part TH11 arranged along the side surface 26 and an arrangement part TH12 arranged along the side surface 23; and a through-hole conductor group TH2 including an arrangement part TH23 arranged along the side surface 25 and an arrangement part TH24 arranged along the side surface 24. The terminal electrodes 31, 32 overlap the arrangement part TH11 in the Y direction and overlap the arrangement part TH12 in the X direction. The terminal electrodes 33, 34 overlap the arrangement portion TH23 in the Y direction and overlap the arrangement portion TH24 in the X direction.
This electronic component comprises a substrate which is provided with: a circuit component; a conductor that is conductively connected to a conductive component of a shield that shields the circuit component from the outside; and a conductive member that is in contact with both the conductive component and the conductor. The conductive member and the conductive component are alloyed.
A dielectric composition includes main phase grains and segregation grains. The segregation grains at least partly include Ba—Mg—Si—O segregation grains including Ba, Mg, Si, and O. Ba, Mg, and Si in the Ba—Mg—Si—O segregation grains constitute 70 parts by mol or more in total out of 100 parts by mol of a total of metal elements and Si in the Ba—Mg—Si—O segregation grains.
C04B 35/468 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates de métaux alcalino-terreux à base de titanates de baryum
A dielectric composition includes main phase grains and segregation grains. The segregation grains at least partly include RE-Mg—Ti—O segregation grains including “RE”, Mg, Ti, and O. “RE” includes a rare earth element. “RE”, Mg, and Ti in the RE-Mg—Ti—O segregation grains constitute 70 parts by mol or more in total out of 100 parts by mol of a total of metal elements in the RE-Mg—Ti—O segregation grains. A ratio of Mg to a total of “RE” and Mg in the RE-Mg—Ti—O segregation grains ranges from 0.1 to 0.3.
C04B 35/468 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates de métaux alcalino-terreux à base de titanates de baryum
A circuit board includes: a substrate; at least a pair of terminals provided on the substrate; a bonding material disposed on the terminals and containing a metal element; and a wall of an insulating material disposed on the substrate, in which the pair of terminals and the bonding material are disposed inside the wall, and at least one wall-frame portion of the wall has at least one groove portion passing through an outer peripheral surface from an inner peripheral surface.
A magnetic sensor device includes a first chip including a first magnetic sensor, a second chip including a second magnetic sensor and a third magnetic sensor, and a support having a reference plane. The first magnetic sensor includes at least one first magnetic detection element, and detects a first component of an external magnetic field. The second magnetic sensor includes at least one second magnetic detection element, and detects a second component of the external magnetic field. The third magnetic sensor includes at least one third magnetic detection element, and detects a third component of the external magnetic field. The first chip and the second chip are mounted on the reference plane.
[Problem] To improve the reliability of an electronic component–embedded substrate in which an electronic component that has front and back terminal electrodes is embedded. [Solution] An electronic component–embedded substrate 100 comprises a core layer 110 that has a through hole 113, an electronic component 10 that is accommodated in the through hole 113, a conductor layer L2 that covers a principal surface 111 of the core layer 110 and a principal surface 21 of an element part 20 via an insulating resin layer 121, and a conductor layer L3 that covers a principal surface 22 of the core layer 110 and a principal surface 22 of the element part 20 via an insulating resin layer 122. The electronic component 10 has a terminal electrode 31 that is exposed from the principal surface 21 and a terminal electrode 32 that is exposed from the principal surface 22. The terminal electrode 31 is connected to a conductor pattern 141 via a via conductor 151, and the terminal electrode 32 is connected to a conductor pattern 172 via a via conductor 182. The terminal electrode 31 and the terminal electrode 32 do not overlap as seen in plan view.
A signal synchronization circuit of the invention includes: a detector that detects a sound source, based on a second signal out of a first signal supplied from a first microphone and the second signal supplied from a second microphone; a setter that sets a processing period, based on a result of detecting by the detector; a first delayer that delays the first signal; a second delayer that delays the second signal; a filter that generates a third signal by performing filtering processing, based on the second signal delayed by the second delayer; and a controller that controls operations of the first delayer, the second delayer, and the filter in the processing period to cause a signal difference between the first signal delayed by the first delayer and the third signal to become small.
H04R 1/22 - Dispositions pour obtenir la fréquence désirée ou les caractéristiques directionnelles pour obtenir la caractéristique de fréquence désirée uniquement
An electronic component includes a stack, a first inductor, and a second inductor. The first inductor includes a first conductor layer, a first columnar conductor, and a second columnar conductor. The second inductor includes a second conductor layer, a third columnar conductor, and a fourth columnar conductor. At least part of the first conductor layer extends in a direction crossing an alignment direction of the first columnar conductor and the second columnar conductor at an angle other than an odd number multiple of 90 degrees. At least part of the second conductor layer extends in a direction crossing an alignment direction of the third columnar conductor and the fourth columnar conductor at an angle other than an odd number multiple of 90 degrees.
A mapping apparatus includes a mapping frame configured to move in the first direction and a second direction; a first detecting unit including a pair of first protrusions protruding from the mapping frame in the second direction in an amount of a first length, the first protrusions being disposed with a first distance therebetween in a third direction, and first sensors near respective extremities of the first protrusions; and a second detecting unit including a pair of second protrusions protruding from the mapping frame in an amount of a second length longer than the first length, the second protrusions being disposed at locations same as those of the first protrusions in the third direction, and second sensors near respective extremities of the second protrusions, the second detecting unit being disposed at a location different from that of the first detecting unit by a predetermined distance.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
95.
MAGNETIC FIELD DETECTION DEVICE AND MAGNETIC FIELD DETECTION DEVICE ARRAY
Disclosed herein is a magnetic field detection device that includes a support having first, second, and third cutouts; and first, second, and third magnetic sensors accommodated in the first, second, and third cutouts, respectively. The support has first and second surfaces extending in first and second directions, third and fourth surfaces extending in the first and third directions, and fifth and sixth surfaces extending in the second and third directions. The first cutout is formed in at least one of the first and fourth surfaces, the second cutout is formed in at least one of the second and fifth surfaces, and the third cutout is formed in at least one of the third and sixth surfaces. Magnetic sensing directions of the first, second, and third magnetic sensors are the first, second, and third directions, respectively.
A coil device includes a core containing a magnetic material and a wire disposed in a coil shape around at least a part of the core. The core includes a middle leg portion and a first base portion. The middle leg portion has a winding portion of the wire disposed therearound. The first base portion is disposed apart by a predetermined distance from one end of the middle leg portion along a winding axis of the winding portion. 70% or more, preferably 80% or more, more preferably 90% or more, or still more preferably 95% or more of a volume of the middle leg portion is located below a venting surface of a heat-dissipating resin.
A coil device includes a core containing a magnetic material and a wire disposed in a coil shape around at least a part of the core. 70% or more of a volume of a middle leg portion of the core is located below a venting surface of a heat-dissipating resin. Between a first base portion of the core and one end of the middle leg portion is an air layer. The air layer is located below the venting surface of the heat-dissipating resin.
A coil device has a core including a magnetic material and a wire disposed in a coil shape around at least a part of the core. 70% or more of a volume of a middle leg portion of the core is located below an atmosphere open surface of a heat dissipation resin. An outer division gap of the core is provided in a middle or an end portion of the outer leg portion, and a partial adhesive portion in which an adhesive is interposed and an air layer in which an adhesive is not interposed are provided in the outer division gap.
[Problem] To provide an electronic component suitable for being built in a substrate and used. [Solution] An electronic component 10 comprising terminal electrodes 31, 32 respectively connected to one end and the other end of coil conductor patterns 41-43. The terminal electrode 31 includes a side surface S1 and an upper surface T1 exposed from a main surface 21 of an element body part 20. The terminal electrode 32 includes a side surface S2 and an upper surface T2 exposed from a main surface 22 of the element body part 20. The side surface S1 includes an upper region S11 and a lower region S12, and the side surface S2 includes an upper region S21 and a lower region S22. The upper region S11 and the element body part 20 are not in contact with each other, and have a gap G1 formed therebetween. The upper region S21 and the element body part 20 are not in contact with each other, and have a gap G2 formed therebetween.
A piezoelectric thin film contains a metal oxide having a perovskite structure. The metal oxide contains bismuth, potassium, titanium, magnesium, iron, and an element M. The element M is at least one element selected from the group consisting of gallium and cobalt. At least a part of the metal oxide is at least one crystal selected from the group consisting of a tetragonal crystal and an orthorhombic crystal. A (001) plane of the crystal is oriented in a normal direction of a surface of the piezoelectric thin film.
