A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) chip may include a VCSEL array including plurality of VCSELs and an integrated optical element including a plurality of lens segments. The integrated optical element may direct beams provided by the plurality of VCSELs to a particular range of angles to create a diffusion pattern using the beams provided by the plurality of VCSELs. A surface of a first lens segment may be sloped to cause a beam from a first VCSEL to be steered at a first angle and a surface of a second (adjacent) lens segment may be sloped to cause a beam from a second VCSEL to be steered at a second angle. A direction of the second angle with respect to a surface of the VCSEL array may be opposite to a direction of the first angle with respect to the surface of the VCSEL array.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
In some implementations, an optical system may include an optical emitter configured to emit a beam, wherein the optical emitter is a vertical cavity surface emitting laser (VCSEL), and wherein the VCSEL is a top-emitting VCSEL or a bottom-emitting VCSEL. The optical system may include a liquid crystal component, the liquid crystal component being disposed on a surface of the optical emitter. The optical system may include a control component.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
To provide a semiconductor laser with which a high light output characteristic and reduction in occurrence of a lateral high-order mode can be achieved, the semiconductor laser includes a diffraction grating layer including first and second refractive index regions. A mesa structure includes a first region having a first width and a second region having a second width wider than the first width. The first region includes a diffraction grating region in which the first and second refractive index regions for use in reflecting a light beam having a Bragg wavelength are alternately arranged at the same period. The second region includes a diffraction grating region and a non-diffraction grating region. The diffraction grating region of the first region and the diffraction grating region of the second region form a resonator. A normalized coupling coefficient of the first region is larger than a normalized coupling coefficient of the second region.
H01S 5/0625 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes dans des lasers à plusieurs sections
H01S 5/10 - Structure ou forme du résonateur optique
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
4.
MULTIPLE SIGNAL FIBER, OPTICAL PUMP-SIGNAL COMBINER
An optical pump-signal combiner includes a first end and a second end. The optical pump-signal combiner is tapered down from the first end to the second end. At a first cross-section of the optical pump-signal combiner associated with the first end, the optical pump-signal combiner includes a capillary, a plurality of signal fibers that are disposed within the capillary, and a plurality of pump fibers that surround the capillary. Each signal fiber, of the plurality of signal fibers, includes a signal core and a signal cladding, and each pump fiber, of the plurality of pump fibers, includes a pump core and a pump cladding. At a second cross-section of the optical pump-signal combiner associated with the second end, the optical pump-signal combiner includes a unified fiber that includes an outer combined-cladding, a combined-pump core, an inner combined-cladding, and a combined-signal core.
G02B 6/04 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage formés par des faisceaux de fibres
In some implementations, an optical system comprises a laser engine that comprises multiple laser sources configured to generate multiple lasers associated with different wavelengths and a signal combiner configured to combine the multiple lasers associated with the different wavelengths into broadband laser light. In some implementations, the optical system may further comprise a process cable configured to transmit the broadband laser light and a process head configured to receive the broadband laser light via the process cable such that the process head may focus the broadband laser light onto a workpiece.
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
H01S 3/30 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p. ex. l'effet Brillouin ou Raman stimulé
6.
KINK-FREE HIGH FILL-FACTOR BROAD AREA SEMICONDUCTOR LASER ON AN OFF-CUT SUBSTRATE
A semiconductor laser may include an off-cut substrate having a cut angle of at least approximately 6 degrees (°). The semiconductor laser may include an epitaxial structure over the off-cut substrate. A first sidewall formed by the off-cut substrate and the epitaxial structure may be parallel to a second sidewall formed by the off-cut substrate and the epitaxial structure. A front facet formed by the off-cut substrate and the epitaxial structure may be parallel to a back facet formed by the off-cut substrate and the epitaxial structure. The cut angle of the off-cut substrate may cause the first sidewall to be non-perpendicular to epitaxial layers of the epitaxial structure. The cut angle of the off-cut substrate may cause the second sidewall to be non-perpendicular to the epitaxial layers of the epitaxial structure.
In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) device. The VCSEL device may include a substrate. The VCSEL device may include a plurality of VCSELs on the substrate. The VCSEL device may include at least one anode layer on the substrate and electrically connected to the plurality of VCSELs. The VCSEL device may include a cathode electrode over at least a portion of multiple VCSELs, of the plurality of VCSELs, and electrically connected to the multiple VCSELs. The cathode electrode may include multiple cathode electrode fingers. The emitter assembly may include a bridge element that electrically connects a first finger of the multiple cathode electrode fingers and a second finger of the multiple cathode electrode fingers.
In some implementations, a fiber processing machine may receive an optical assembly comprising an input fiber, an output fiber, and a graded index fiber spliced between the input fiber and the output fiber, wherein the graded index fiber has a pitch length and a processed length. A light source may deliver input light into an input end of the input fiber while one or more components monitor output light at an output end of the output fiber. The fiber processing machine may alter a core diameter and the processed length of the graded index fiber until one or more measurements of the output light at the output end of the output fiber indicate that the output light is a perfect image of the input light.
G02B 6/028 - Fibres optiques avec revêtement le noyau ou le revêtement ayant un indice de réfraction progressif
G02B 6/28 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux
9.
GAIN-FLATTENING FIBER BRAGG GRATING WRITTEN INTO GAIN MEDIA OF OPTICAL AMPLIFIER SYSTEM
An optical amplifier assembly includes an optical amplifier stage including an active fiber with an active fiber core configured to guide and amplify a signal light; a pump laser configured to provide pump laser light; a wavelength-division multiplexing (WDM) coupler configured to couple the pump laser light into the active fiber core; and a gain-flattening fiber Bragg grating (FBG) arranged in the active fiber core. The optical amplifier stage is configured to provide a spectral gain profile corresponding to the active fiber core and the pump laser. The gain-flattening FBG is configured to at least partially flatten the spectral gain profile in order for the optical amplifier assembly to provide an amplified signal light with an at least partially flattened first spectral gain profile. The amplified signal light is derived from the signal light propagating through the active fiber core.
In some implementations, an optical isolator core includes a Faraday rotator and a plurality of birefringent crystal plates. The plurality of birefringent crystal plates may include a first birefringent crystal plate to separate input light into light having a first polarization and light having a second polarization, and a second birefringent crystal plate to combine the light having the first polarization and the light having the second polarization in output light that is laterally displaced by the single stage optical isolator. The Faraday rotator may be provided between the first birefringent crystal plate and the second birefringent crystal plate. In some implementations, the plurality of birefringent crystal plates further include a third birefringent crystal plate provided between the Faraday rotator and the second birefringent crystal plate. Additionally, or alternatively, the optical isolator core may further include a half-wave plate arranged between the Faraday rotator and the first birefringent crystal plate.
H01S 3/063 - Lasers à guide d'ondes, p. ex. amplificateurs laser
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H01S 3/102 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p. ex. par commande des procédés ou des appareils pour l'excitation
11.
VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH AN INTEGRATED GROUND LAYER
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate and a plurality of VCSELs on the substrate. The VCSEL device may include an anode layer on the substrate and electrically connected to the plurality of VCSELs. The VCSEL device may include a cathode electrode over at least a portion of one or more VCSELs, of the plurality of VCSELs, and electrically connected to the one or more VCSELs. The VCSEL device may include a ground layer electrically isolated from the at least one anode layer and the cathode electrode by one or more isolation layers, wherein the ground layer is on the anode layer and the cathode electrode, between the anode layer and the cathode electrode, or underneath the anode layer.
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01S 5/0234 - Montage à orientation inversée, p. ex. puce retournée [flip-chip], montage à côté épitaxial au-dessous ou montage à jonction au-dessous
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A vertical-cavity surface-emitting laser (VCSEL) may include a substrate, a first mirror structure, and a cavity region to generate light. The cavity region may cause a resonance wavelength of a first portion of the light and a resonance wavelength of a second portion of the light to be offset from a gain peak of the VCSEL, where the first portion has a first polarization and the second portion has a second polarization, and an offset of the resonance wavelength of the first portion is different from an offset of the resonance wavelength of the second portion. The VCSEL may include a confinement aperture that has an asymmetric shape to cause spectral separation of the resonance wavelength of the first portion and the resonance wavelength of the second portion. The VCSEL may include a second mirror structure and one or more layers that form an output aperture.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/10 - Structure ou forme du résonateur optique
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
14.
MASTER OSCILLATOR POWER AMPLIFIER WITH SEEDED OSCILLATOR FOR FIBER LASER
A master oscillator power amplifier system includes a seed laser oscillator and a master laser oscillator. The seed laser oscillator includes a first oscillator fiber with a first laser cavity configured to convert a first pump light into a first seed laser light in a fundamental mode as the first pump light interacts with a fiber core of the first oscillator fiber. The master laser oscillator includes a second oscillator fiber with second laser cavity configured to receive and convert the first seed laser light into a second seed laser light in the fundamental mode as the first seed laser light interacts with a fiber core of the second oscillator fiber, and receive and convert a second pump light into a primary laser light in the fundamental mode as the second pump light interacts with the fiber core of the second oscillator fiber.
A semiconductor array device includes mesa-stripe structures each including an active layer electrically connected to the semiconductor substrate; individual electrodes each electrically connected to the active layer; and common electrodes each electrically connected to the semiconductor substrate. The mesa-stripe structures include a first mesa-stripe structure and a pair of second mesa-stripe structures, the pair of second mesa-stripe structures sandwiching the first mesa-stripe structure. The common electrodes include a first electrode and a pair of second electrodes, the pair of second electrodes sandwiching the first electrode. The first electrode is closest to the first mesa-stripe structure among the mesa-stripe structures. Each of the pair of second electrodes is closest to a corresponding one of the pair of second mesa-stripe structures among the mesa-stripe structures. Each of the pair of second electrodes is smaller in area than the first electrode.
To obtain both a high power and a single mode oscillation of a semiconductor laser, the semiconductor laser includes a diffraction grating layer. The diffraction grating layer includes a λ/4 phase shift portion, and includes first and second regions. The first region has a diffraction pattern arranged therein, the diffraction pattern being formed to reflect a light beam having a Bragg wavelength and having first and second refractive index regions alternately arranged therein. The second region is provided with a first portion that reflects the light beam having the Bragg wavelength in the first region and a second portion that transmits the Bragg wavelength in the first region. The second portion is formed of the first and second refractive index regions. A total length of the first portion in a direction in which the diffraction grating layer extends is shorter than a length of the first region.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
To obtain both a high output power and a single mode oscillation of a semiconductor laser. The semiconductor laser includes first and second regions. In the first region, a diffraction pattern having a high reflectance with respect to a light beam having a Bragg wavelength is arranged. The second region includes: a π-shift region with a phase shifting by π from a phase of the first region, a secondary λ/4 shift portion, an in-phase region having the same phase as that of the first region, and the secondary λ/4 shift portion are arranged toward a second end portion in the stated order; and the π-shift region. The π-shift region is longer than the in-phase region, a length of the first region is larger than a difference between the π-shift region and the in-phase region, and facets on both sides each have a low-reflection facet coating film formed thereon.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
A bidirectional optical device includes a first optical component, wherein a portion of a first interface of the first optical component has a reflector coating, wherein a second interface of the first optical component has an optical coating, and wherein the first optical component includes an internal splitting interface disposed between the first interface and the second interface, and a second optical component including a reflector aligned to the second interface of the first optical component, wherein the first optical component and the second optical component comprise an unbalanced Mach-Zehnder (MZ) interferometer.
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
H04B 10/25 - Dispositions spécifiques à la transmission par fibres
An optical transceiver includes a printed circuit board (PCB) with an edge; one or more first components associated with a transmitter functionality of the optical transceiver, the one or more first components including a linear driver component and a processing component; one or more second components associated with a receiver functionality of the optical transceiver, the one or more second components including a linear transimpedance amplifier (TIA) component; electrical contacts arranged at the edge of the PCB; first electrical traces, connected between the one or more first components and the electrical contacts; and second electrical traces, connected between the one or more second components and the electrical contacts. The one or more first components are closer to the electrical contacts than the one or more second components.
H03F 3/08 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs commandés par la lumière
A vertical comb drive assembly may include a rotor assembly. The rotor assembly may include a comb anchor to attach the rotor assembly to a base, a comb rotor attached to the comb anchor, and a movable element attached to the comb rotor. The vertical comb drive assembly may include a stator assembly. The stator assembly may include a plate anchor to attach the stator assembly to the base, a plate, wherein the plate forms a comb stator, and a plate hinge to connect the plate to the plate anchor. The plate hinge and the plate may be configured for moving the plate from a first position where the comb rotor and the comb stator are both in a first plane to a second position where the comb rotor is in the first plane and the comb stator is in a second plane.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques
H02N 1/00 - Générateurs ou moteurs électrostatiques utilisant un porteur mobile de charge électrostatique qui est solide
A vertical-cavity surface-emitting laser (VCSEL) array may include a substrate, a wafer bonding layer over the substrate, and a first metal layer on or within the wafer bonding layer. The first metal layer may include a plurality of first electrodes. The VCSEL array may include an epitaxial region over the first metal layer and the wafer bonding layer. The epitaxial region may be bonded to the wafer bonding layer. The VCSEL array may include a second metal layer over the epitaxial region. The second metal layer may include a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes may form a plurality of matrix addressable subarrays of the VCSEL array, where each matrix addressable subarray of the plurality of matrix addressable subarrays includes one or more emitters.
In some implementations, an optical component includes an optical medium, the optical medium having a surface, wherein the surface includes one or more hydroxyl group terminations; and a surface layer chemically bonded to the optical medium, such that the surface layer has a thickness of less than 10 nanometers and is a hydrophobic surface, the surface layer including at least one of: a hexamethyldisilazane material, a polysiloxane material, a polydimethylsiloxane material, a fluoro-polymer material, an organosilicon material, or an organofluorine material.
In some implementations, an optical system includes a multicore input fiber comprising multiple cores that are each configured to support an independent singlemode laser; a delivery fiber comprising a single core configured to support multiple modes; and a signal combiner, coupled to the multicore input fiber and coupled to the delivery fiber. In some implementations, the signal combiner is configured to receive multiple independent singlemode laser inputs from the multicore input fiber and to combine the multiple independent singlemode laser inputs into a multimode output that is provided to the delivery fiber.
An opto-mechanical package may include a package body having a first opening. The opto-mechanical package may include a coupler in the first opening of the package body. The coupler may have a second opening. The coupler may comprise a flexible element. A coefficient of thermal expansion (CTE) of a material of the coupler may be less than a CTE of a material of the package body. The opto-mechanical package may include a window in the second opening of the coupler. A CTE of a material of the window may be less than the CTE of the material of the coupler. The opto-mechanical package may include a first epoxy joint between a surface of the package body and a surface of the coupler. The opto-mechanical package may include a second epoxy joint between a surface of the coupler and a surface of the window.
In some implementations, a pump-signal combiner may comprise a plurality of pump fibers configured to receive pump light and to transmit the pump light into a cladding of an output fiber and one or more signal fibers, surrounded by the plurality of pump fibers. In some implementations, the one or more signal fibers may each comprise an input section, coupled to the one or more first laser sources, having an input core diameter; an output section, coupled to the output fiber, having an output core diameter; a first tapered section, adjacent to the input section, in which a core diameter increases from the input core diameter to a maximum value; and a second tapered section, adjacent to the output section, in which a core diameter decreases from the maximum value to the output core diameter.
H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H01S 3/0941 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p. ex. par une diode laser
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
In some implementations, a dot projector optic may include a collimating lens; a fisheye lens; and a dot aberration correction element disposed between the collimating lens and the fisheye lens. An input to the fisheye lens, from the dot aberration correction element, may be associated with a first field of view angle. An output from the fisheye lens may be associated with a second field of view angle that is larger than the first field of view angle.
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
In some implementations, a substrate tube in a modified chemical vapor deposition process may rotate while glass precursors flow into the substrate tube at a fixed rate. Dopants may be delivered into the substrate tube while heat is applied to the substrate tube to deposit, on an inner wall of the substrate tube, a layer of material including the glass precursors and the dopants. A lateral position of an exit of an injection tube used to deliver the dopants may be adjusted while the substrate tube is rotated and heat is applied to the substrate tube such that the material deposited on the inner wall of the substrate tube has an azimuthally non-uniform doping concentration. Alternatively, a rotation of the substrate tube may be adjusted to create opposing temperature gradients within the substrate tube, causing non-uniform layer deposition to occur on different sides of the substrate tube in alternating passes.
C03B 37/012 - Fabrication d'ébauches d'étirage de fibres ou de filaments
C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p. ex. par dépôt chimique en phase vapeur
C03B 37/027 - Fibres constituées de différentes variétés de verre, p. ex. fibres optiques
A semiconductor photodetector includes a substrate; a mesa structure on the substrate, the mesa structure being composed of some layers including an upper layer and a lower layer, the upper layer being an absorption layer of light, the lower layer being a wide bandgap layer with a bandgap wide enough not to absorb the light; and an insulating film covering a side of the mesa structure, each of the layers comprising single crystals of III-V semiconductors and having a top of a (100) plane, the top of the wide bandgap layer having a shape including a pair of vertices, in [0-11] and [01-1] directions, on a circumference of a minimum bounding circle.
H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
A ridge-type semiconductor optical device includes: a substrate; a mesa stripe structure on the substrate, the mesa stripe structure extending in a first direction, the mesa stripe structure comprising a brittle material; an electrode pattern including a ridge electrode on the mesa stripe structure; a pair of projection structures on the substrate and on both sides of the mesa stripe structure in a second direction perpendicular to the first direction; and a protection film on each projection structure, the protection film being separated from the electrode pattern, the protection film comprising a ductile material, the protection film and a corresponding one of the pair of projection structures being aligned at edges toward at least one orientation along the first direction, the protection film having a top higher from the substrate than a top of the ridge electrode.
An optical data communication device includes a plurality of emitters. The plurality of emitters are configured to emit respective laser beams that are associated with a same spectral range and that are to couple into an input end of a multi-mode optical fiber. A size of an oxide aperture of each emitter, of the plurality of emitters, is less than or equal to 3.5 micrometers. Each emitter is a single-mode emitter or a reduced-mode emitter. A pitch between adjacent emitters is less than or equal to 30 micrometers. The plurality of emitters are disposed in a configuration pattern, wherein a central region of the configuration pattern does not include any emitter of the plurality of emitters.
In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs respectively associated with a plurality of first electrical contacts. A first spacing of the plurality of first electrical contacts may define a first pitch. The emitter assembly may include a redistribution layer, disposed on the VCSEL chip, to increase the first pitch of the plurality of first electrical contacts. The emitter assembly may include a carrier having a plurality of second electrical contacts. A second spacing of the plurality of second electrical contacts may define a second pitch greater than the first pitch. The emitter assembly may include a plurality of conductive pillars that electrically connect the plurality of first electrical contacts and the plurality of second electrical contacts via the redistribution layer. The plurality of conductive pillars may be arranged according to the second spacing.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip. The emitter assembly may include a dummy pillar, electrically isolated from the VCSEL chip, mating with a slot. The VCSEL chip may include one of the dummy pillar or the slot.
In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip, and a conductive pillar, of the plurality of conductive pillars, may have a solder cap at an end of the conductive pillar. The emitter assembly may include a pin extending into the solder cap.
In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs in a bottom-emitting configuration, and multiple VCSELs, of the plurality of VCSELs, may be grouped in a cluster. The emitter assembly may include a carrier, and the VCSEL chip may be in a flip chip configuration with the carrier. The emitter assembly may include a conductive pillar electrically connected to the multiple VCSELs grouped in the cluster.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/0234 - Montage à orientation inversée, p. ex. puce retournée [flip-chip], montage à côté épitaxial au-dessous ou montage à jonction au-dessous
H01S 5/0237 - Fixation des puces laser sur des supports par soudage
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
35.
SPACER FOR ATTACHING COEFFICIENT OF THERMAL EXPANSION MISMATCHED COMPONENTS
In some implementations, an optical device may include a base with a first coefficient of thermal expansion (CTE). The optical device may include an opto-mechanical component with a second CTE attached to a surface of the base via a solder layer. The first CTE and the second CTE may differ by greater than a threshold amount. A spacer may be disposed within the solder layer to attach the opto-mechanical component to the base.
H01S 5/02216 - SupportsBoîtiers caractérisés par la forme des boîtiers du type papillon, c.-à-d. avec les broches d’électrode s’étendant latéralement depuis le boîtier
H01S 5/02251 - Découplage de lumière utilisant des fibres optiques
H01S 5/02325 - Composants intégrés mécaniquement aux éléments de montage ou aux micro-bancs optiques
36.
OPTICAL MODULE INCLUDING RIBBONIZED FIBERS AND A FIBER ROUTING DEVICE
A fiber routing device may include a planar structure. The fiber routing device may include a set of fiber features associated with organizing fibers for forming ribbon groups, the set of fiber features being held by the planar structure. A first end of a fiber feature of the set of fiber features may be at a first side of the fiber routing device. A second end of the fiber feature may be at a second side of the fiber routing device or may be between the first side of the fiber routing device and the second side of the fiber routing device.
In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
In some implementations, an optical module includes a housing and a circuitry component disposed within the housing, the circuitry component including an optical subassembly and a digital signal processor. The optical module may include a first heatsink above the optical subassembly, and a second heatsink above the digital signal processor, where the second heatsink is separated from the first heatsink by an air gap.
In some implementations, an optical emitter includes a set of light emitting junctions; and a set of tunnel junctions separating the set of light emitting junctions, wherein a first light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a first wavelength, and wherein a second light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a second wavelength that is different from the first wavelength.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
40.
THIN FILM NARROW BANDWIDTH TRANSMISSION FILTER FOR OPTICAL EMITTERS
In some implementations, an optical system includes an optical emitter, a locking apparatus, wherein the locking apparatus comprises a narrow bandwidth transmission filter (NBTF) and a partial reflection surface, wherein the locking apparatus is aligned to an optical output of the optical emitter, and wherein the locking apparatus is configured to provide optical feedback to the optical emitter.
An optical polarization converter includes an optical waveguide. A portion of the optical waveguide has an asymmetric cross-section profile. For example, a cross-section of the portion of the optical waveguide may not have symmetry associated with a horizontal axis and may not have symmetry associated with a vertical axis. The portion of the optical waveguide is tapered. For example, the portion of the optical waveguide may be associated with one or more taper ratios. The portion of the optical waveguide is configured to convert a polarization mode of an optical beam from a first fundamental polarization mode to a second fundamental polarization mode, such as from a fundamental transverse electric (TE) polarization mode to a fundamental transverse magnetic (TM) polarization mode (or vice versa).
In some implementations, a wavelength division multiplexing (WDM) device includes a spacer; a first filter component; and a second filter component. The spacer is configured to propagate a light beam emitted from an input fiber of the WDM device within the spacer to the first filter component. The first filter component is configured to filter the light beam to create and direct a once-filtered light beam to the spacer. The spacer is configured to propagate the once-filtered light beam within the spacer to the second filter component. The second filter component is configured to filter the once-filtered light beam to create and direct a twice-filtered light beam to the spacer. The spacer is configured to propagate the twice-filtered light beam within the spacer to another component of the WDM device, such as another filter component, a mirror component, or an output fiber of the WDM device.
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
43.
VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH ISOLATED CATHODES AND A COMMON ANODE
A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/42 - Réseaux de lasers à émission de surface
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/42 - Réseaux de lasers à émission de surface
45.
VERTICAL CAVITY SURFACE EMITTING LASER WITH ENHANCED MODULATION BANDWIDTH
In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
46.
METHODS FOR DRIVING OPTICAL LOADS AND DRIVER CIRCUITS FOR OPTICAL LOADS
A driver circuit, for generating narrow electrical pulses of high repetition rate with high peak current and low after pulse ringing to drive an optical load, may include a source, a first circuit path, and a second circuit path. The first circuit path may be connected to the source and may include inductive elements and a switch. The switch being in a closed state may charge current in the inductive elements through the first circuit path. The second circuit path may connect to the optical load and may be connected to the source. The second circuit path may include the inductive elements and a capacitive element in series with the optical load. The switch transitioning from the closed state to an open state may discharge current from the inductive elements through the second circuit path to provide an electrical pulse to the optical load.
An optical device includes a substrate and an epitaxial layer structure disposed over the substrate. The epitaxial layer structure includes a first clad layer disposed over the substrate, a first waveguide layer disposed over the first clad layer, an active layer disposed over the first waveguide layer, a second waveguide layer disposed over the active layer, a second clad layer disposed over the second waveguide layer, and a cap layer disposed over the second clad layer. The optical device further includes a pair of trenches formed in an inner region of a surface of the epitaxial layer structure, and a pair of grooves, each formed in an outer region of the surface of the epitaxial layer structure. Each trench does not extend into the active layer, and each groove extends into the active layer. A light-current curve associated with the laser optical device is kink-free and/or smooth.
In some implementations, a laser diode array may comprise a cavity that includes a rear facet and a front facet and multiple emitters that are transversely single mode and disposed within the cavity. In some implementations, the multiple emitters each include a seeding section having a constant emitter width that is single mode at the rear facet and a flared section having a monotonically expanding emitter width that increases adiabatically over a majority of a length of the cavity such that outputs from the multiple emitters are single mode at the front facet. In some implementations, the emitter width is less than twenty micrometers at the front facet.
In some implementations, an optical receiver includes a polarization beam splitter configured to split a reception signal into a first polarization reception signal and a second polarization reception signal, a first demultiplexing component configured to demultiplex the first polarization reception signal into a first optical signal and a second optical signal associated with a first polarization, a second demultiplexing component configured to demultiplex the second polarization reception signal into a third optical signal and a fourth optical signal associated with a second polarization, a first demodulation component configured to mix the first optical signal and the third optical signal with a first local oscillator signal to demodulate the first optical signal and the third optical signal, and a second demodulation component configured to mix the second optical signal and the fourth optical signal with a second local oscillator signal to demodulate the second optical signal and the fourth optical signal.
In some implementations, an optical receiver includes a demultiplexing component configured to demultiplex a reception signal into a first reception signal and a second reception signal, a first polarization beam splitter configured to split the first reception signal into a first optical signal associated with a first polarization and a second optical signal associated with a second polarization, a second polarization beam splitter configured to split the second reception signal into a third optical signal associated with the first polarization and a fourth optical signal associated with the second polarization, a first demodulation component configured to mix the first optical signal and the second optical signal with a first local oscillator signal, and a second demodulation component configured to mix the third optical signal and the fourth optical signal with a second local oscillator signal.
An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
52.
OPTICAL MODULE WITH DOUBLE EMITTER CHIPS AND DOUBLE DOVE PRISMS
An optical module may include a diode laser with dual emitters respectively configured to emit a first laser beam and a second laser beam in a beam propagation direction. The optical module may include a fast axis collimator (FAC) arranged to collimate the first and second laser beams in a vertical direction relative to the beam propagation direction and a slow axis collimator (SAC) arranged after the FAC to collimate the first and second laser beams in a horizontal direction relative to the beam propagation direction. The optical module may include a pair of Dove prisms between the FAC and the SAC, with respective axes rotated relative to the first emitter and the second emitter such that the first laser beam and the second laser beam swap fast and slow axes and are stacked in a fast axis direction after passing through the Dove prisms.
In some implementations, an optical assembly includes an optical power monitor to receive a portion of an optical beam and to perform a measurement on the portion of the optical beam; an optical tap to tap the optical beam and provide the portion of the optical beam; and an optical element to allow the portion of the optical beam from the optical tap to propagate toward the optical power monitor, wherein the optical element includes an absorptive material to absorb light other than the portion of the optical beam that is propagated toward the optical power monitor.
A system may perform an uptapering process to cause a signal fiber to have a fiber core with a first uptapered thickness profile and a fiber cladding with a second uptapered thickness profile. The system may perform, after performing the uptapering process, an uptapering removal process to cause the fiber cladding of the signal fiber to not have the second uptapered thickness profile. The system may perform, after performing the uptapering removal process, a bundling process to bundle the signal fiber and a set of one or more pump fibers in a bundle configuration. The system may perform, after performing the bundling process, a bundle unification process to cause the bundle configuration to form a unified bundle configuration. The system may perform, after performing the bundle unification process, an attachment process to cause an end of the unified bundle configuration to attach to an end of an output fiber.
G02B 6/255 - Épissage des guides de lumière, p. ex. par fusion ou par liaison
H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente
G02B 6/04 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage formés par des faisceaux de fibres
55.
Rectangular pulse driving circuit using cathode pre-charge and cathode-pull compensation
In some implementations, an electrical drive circuit may generate a rectangular optical pulse using cathode pre-charge and cathode-pull compensation. The electrical drive circuit may include an anode and a cathode to connect an optical load, a switch, a first source connected between the anode and a ground, a rectifier connected between the cathode and the switch, a capacitor connected in parallel with the rectifier, a second source connected to the ground, and an inductor connected between the switch and the second source. In some implementations, when the switch is closed and the optical load is connected, a first current is provided to the optical load through the first source, the rectifier, and the switch, and a second current is provided to the optical load through the first source, the capacitor, and the switch, where a rise time of the first current complements a fall time of the second current.
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
H03K 3/53 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation d'un élément accumulant de l'énergie déchargé dans une charge par un dispositif interrupteur commandé par un signal extérieur et ne comportant pas de réaction positive
A shutdown circuit may include a filter, for receiving a laser trigger signal for a laser emitter, that is configured to output a filtered signal. The shutdown circuit may include a logic gate configured to receive the filtered signal and at least one of a first signal based on a signal from a photodiode or a second signal based on a signal from a conductive path. The shutdown circuit may include a flip-flop configured to receive an output of the logic gate and to output an enablement signal that is based on the output of the logic gate, and a driver circuit for a switch configured to control current flow to the laser emitter. The driver circuit may be configured to receive the enablement signal and the laser trigger signal and to output the laser trigger signal based on whether the enablement signal is a first or a second voltage.
In some implementations, a microcontroller may trigger a control loop to read a feedback voltage based on an interrupt that has a periodicity based on a control loop frequency. The microcontroller may calculate a target duty cycle for a first transistor and a second transistor based on the feedback voltage. The target duty cycle may control respective proportions of time that the first transistor and the second transistor spend in an on state. The microcontroller may output, based on the target duty cycle, a first pulse-width modulation (PWM) signal to switch a state of the first transistor and a second PWM signal to switch a state of the second transistor. In some implementations, the first PWM signal and the second PWM signal may be associated with a switching frequency that differs from the control loop frequency.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/00 - Détails d'appareils pour transformation
In some implementations, a light detection and ranging (LIDAR) system includes a vertical cavity surface emitting laser (VCSEL) array including a plurality of VCSELs. The VCSEL array may have a first aspect ratio. The LIDAR system may include a set of transmission optics configured to receive light from the VCSEL array and to illuminate a field of view having a second aspect ratio that is greater than the first aspect ratio. The LIDAR system may include an image sensor array configured for line readout. The image sensor array may have a third aspect ratio that is different from the first aspect ratio. The LIDAR system may include a set of reception optics configured to image light reflected from objects in the field of view, having the second aspect ratio, onto the image sensor array having the third aspect ratio.
Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
60.
RIBBON BONDING GROUND PLANE FOR RADIO FREQUENCY PERFORMANCE IMPROVEMENT IN ELECTRO-OPTICAL DEVICES
In some implementations, an electro-optical device includes a first substrate including a first ground pad and a first signal pad; a second substrate including a second ground pad and a second signal pad, wherein the first signal pad and the second signal pad form a signal pad pair, wherein the first substrate is separated from the second substrate by less than a threshold amount; wherein the first substrate is configured to receive an optical component and the second substrate is configured to receive an electrical component that is couplable to the optical component via a wire bonding between the first signal pad and the second signal pad; and a planar ribbon bonding connecting the first ground pad to the second ground pad and diagonally crossing the wire bonding.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
61.
VERTICAL CAVITY SURFACE EMITTING LASER WITH ACTIVE LAYER-SPECIFIC ADDRESSABILITY
A vertical cavity surface emitting laser (VCSEL) may include an epitaxial structure that includes a first active layer, a second active layer, and a tunnel junction therebetween. The VCSEL may include a set of contacts that are electrically connected to the epitaxial structure. The set of contacts may include three or more contacts, and the set of contacts may be electrically separated from each other on the VCSEL. At least one contact, of the set of contacts, may be electrically connected to the epitaxial structure at a depth between the first active layer and the second active layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
An optical module includes a stepped structure that includes a plurality of steps, a plurality of laser diodes (e.g., broad area laser diodes (BALs)), a transform lens; a grating; and an output coupler (OC). At least one laser diode, of the plurality of laser diodes, is disposed on each step of the plurality of steps of the stepped structure. The transform lens is configured to receive a plurality of laser beams emitted by the plurality of laser diodes and to direct the plurality of laser beams to the grating. The grating is configured to receive and to combine the plurality of laser beams into a single laser beam, and to direct the single laser beam to the OC. The OC is configured to receive the single laser beam from the grating and to direct a portion of the of the single laser beam out of the optical module.
In some implementations, an optical amplifier system includes a variable gain optical amplifier that is an erbium doped fiber amplifier. The variable gain optical amplifier may provide a first gain stage for an optical signal. The optical amplifier system may include a fixed gain optical amplifier that is an erbium-ytterbium doped fiber amplifier. The fixed gain optical amplifier may provide a second gain stage for the optical signal following the first gain stage.
A fiber combiner includes a capillary and a plurality of input fibers disposed within the capillary. A first portion of the capillary has a first non-zero slope profile along a first portion of an output end of the fiber combiner. A second portion of the capillary has a second non-zero slope profile along a second portion of the output end of the fiber combiner. The second non-zero slope profile is different than the first non-zero slope profile.
G02B 6/28 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux
65.
PACKAGE-ON-PACKAGE AND SYSTEM-IN-PACKAGE PACKAGING ARCHITECTURES
An optical package may include a fan-out-wafer-level-packaging (FOWLP) sub-package including a redistribution layer (RDL) on a molded component including an electrical chip. The optical package may include an optical chip over the FOWLP sub-package. The optical chip may be electrically connected to the RDL. An area of a surface of the RDL may be larger than an area of a surface of the optical chip. The optical package may include a package housing over the optical chip such that light to be received or transmitted by the optical chip may is to pass through the package housing.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01S 5/0239 - Combinaisons d’éléments électriques ou optiques
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
66.
THIN DIELECTRIC SUBSTRATE FOR LOW THERMAL RESISTANCE AND LOW PARASITIC INDUCTANCE
In some implementations, a substrate comprises a ceramic core, multiple metal-filled vias through the ceramic core, and a first metal layer, on a top side of the ceramic core, including metal traces, over respective metal-filled vias. The substrate comprises a second metal layer, including a first electrical contact over a first metal trace, a second electrical contact over a second metal trace, and a third electrical contact over a third metal trace, where the second metal trace is electrically isolated from the first and third metal traces. The substrate comprises a thin dielectric layer separating the first metal layer and the second metal layer. The dielectric layer between the first metal layer and the second layer provides the substrate with a low parasitic inductance and a low thermal resistance based on a thickness of the dielectric layer and/or a material used for the dielectric layer.
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p. ex. une résistance, un condensateur, une inductance imprimés
In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A laser component includes a pump-signal combiner, which includes a first capillary, a plurality of pump fibers, a second capillary, and a signal fiber. The plurality of pump fibers, the second capillary, and the signal fiber are arranged in a bundle configuration. The bundle configuration is disposed within an internal portion of the first capillary. A cross-section of the bundle configuration includes an outer area, in which the plurality of pump fibers are disposed, and an inner area, in which the second capillary and the signal fiber are disposed. The signal fiber is disposed within an internal portion of the second capillary.
G02B 6/04 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage formés par des faisceaux de fibres
H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente
An optical system may include a scanning element, a detector, and a planar lightwave circuit (PLC)-based walk-off compensator. The PLC-based walk-off compensator may include a plurality of input waveguides associated with receiving an optical signal from the scanning element. The PLC-based walk-off compensator may include an optical switch configured to select one or more input waveguides, from the plurality of input waveguides, to be coupled to the detector. The selection of the one or more input waveguides may be based on an expected walk-off of the optical signal. The PLC-based walk-off compensator may include an output waveguide to provide the optical signal to the detector.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4913 - Circuits de détection, d'échantillonnage, d'intégration ou de lecture des circuits
In some implementations, a master oscillator power amplifier (MOPA) system may include one or more pump laser sources, a power amplifier, and a multicore oscillator that includes an input side coupled to the one or more pump laser sources and an output side coupled to the power amplifier. In some implementations, the multicore oscillator may include an active fiber, including an inner cladding, an outer cladding surrounding the inner cladding, and multiple active fiber cores, embedded in the inner cladding, to convert pump light into signal light. In some implementations, the multicore oscillator may include multiple first reflectors that are each configured to operate as a high reflector on the input side of the oscillator, and multiple second reflectors that are each configured to operate as an output coupler on the output side of the oscillator.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/0941 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p. ex. par une diode laser
71.
Semiconductor layer structure with a thin blocking layer
A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
72.
DRIVER CIRCUIT FOR AN ADDRESSABLE ARRAY OF OPTICAL EMITTERS
In some implementations, a controller may cause a first switch of a driver circuit to transition from an open state to a closed state to charge an inductive element of the driver circuit. The controller may cause the first switch to transition from the closed state to the open state to discharge the inductive element. The controller may cause a second switch of the driver circuit to transition from an open state to a closed state to select a capacitive element to be charged by discharging the inductive element. The controller may cause a third switch of the driver circuit to transition from an open state to a closed state to discharge the selected capacitive element to provide an electrical pulse to an optical emitter, of an array of optical emitters of the driver circuit, that is connected to the selected capacitive element.
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
73.
Liquid crystal on silicon panel with electrically-conductive adhesive
In some implementations, a liquid crystal on silicon panel includes a backplane with an electrical contact formed on the backplane, a first alignment layer disposed on the backplane and interfacing with the electrical contact, a conductive layer that is light transmissive, a second alignment layer disposed on the conductive layer, and a plurality of beads in an electrically-conductive adhesive between the first alignment layer and the second alignment layer. Electrically-conductive particles within the electrically-conductive adhesive may make the electrically-conductive adhesive electrically-conductive. A first set of the electrically-conductive particles may puncture the first alignment layer to contact the electrical contact, and a second set of the electrically-conductive particles may puncture the second alignment layer to contact the conductive layer. An electrical connection of the electrical contact and the conductive layer may be via a plurality of the electrically-conductive particles.
In some implementations, an optical receiver may receive, from an optical transmitter, a signal that is based on a clock of the optical transmitter. The optical receiver may generate a sampling clock signal that is swept over a range of sampling rates. The optical receiver may perform, using the sampling clock signal at a sampling rate of the range of sampling rates, oversampling of the signal to detect transition edges of the signal. The optical receiver may determine that the detected transition edges are indicative of a correspondence between the sampling rate and a data rate of the signal. The optical receiver may terminate sweeping of the sampling clock signal over the range of sampling rates based on the correspondence between the sampling rate and the data rate. The optical receiver may adjust the sampling clock signal to align the sampling clock signal with transition edges of the signal.
An optical device may include a fiber to provide a beam. The optical device may include a graded-index element to expand or magnify the beam. An input facet of the graded-index element may be adhered to an output facet of the fiber. The optical device may include an optical transformation element to transform the beam after the beam is expanded or magnified by the graded-index element. An input facet of the optical transformation element may be adhered to an output facet of the graded-index element. The optical transformation element may comprise at least one active optical element or may be non-birefringent such that orthogonal polarizations of the beam do not experience distinct phase transformations.
In some implementations, a light detection and ranging (LIDAR) system may generate a transmission signal by modulating a signal with a first signal and a second signal. The signal may be modulated with the first signal using a first combination of polarization and phase and with the second signal using a second combination of polarization and phase. The LIDAR system may transmit the transmission signal and receive a reception signal that is based on a reflection of the transmission signal from an object. The LIDAR system may mix the reception signal with the oscillator laser signal to generate a first detection signal associated with the first signal and a second detection signal associated with the second signal, and may determine a first phase shift of the first signal based on the first detection signal and a second phase shift of the second signal based on the second detection signal.
G01S 17/26 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels les impulsions transmises utilisent une onde porteuse modulée en fréquence ou en phase, p. ex. pour la compression d'impulsion des signaux reçus
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
In some implementations, an electro-optic modulator may include a waveguide to propagate an optical signal in a direction of propagation. The electro-optic modulator may include a signal electrode, associated with the waveguides, to modulate the optical signal. The signal electrode may include a base structure. The signal electrode may include a loading line structure comprising one or more segments, where a segment, of the one or more segments, connects to the base structure via a plurality of electrically-conductive bridges.
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
78.
PATTERNED WAFER MICRORULER FOR OVERSPRAY SCREENING OF LASER ANTI-REFLECTIVE AND/OR HIGHLY REFLECTIVE FACET COATINGS
In some implementations, a microruler is patterned on a surface of a wafer to enable visual overspray screening and/or quantitative measurement. For example, a laser bar cleaved from a wafer may comprise multiple laser devices that each include a first facet and a second facet, an anti-reflective (AR) coating applied to the first facet, and a highly reflective (HR) coating applied to the second facet. Furthermore, a set of microrulers may be patterned on a surface of the laser bar, where each microruler in the set of microrulers is aligned with a bar cleaving line where the laser bar was cleaved from the wafer, and each microruler has multiple graduation markings that each represent a respective distance from the bar cleaving line such that the graduation markings can be used to quantitatively measure an overspray of the AR coating or the HR coating relative to the bar cleaving line.
In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
An optical device may include emitter array to emit light. The optical device may include a collimating element to create an image of the light emitted by the emitter array. The optical device may include a diffractive optical element (DOE) to generate a pattern from the image of the light. The optical device may include a distortion correction element to reduce distortion in the pattern on a screen or to shape the pattern on the screen.
In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
In some implementations, an optical system includes an emitter array including a plurality of emitters. The plurality of emitters are arranged in a plurality of channels and the emitter array is configured to illuminate on a per-channel basis. Respective positions of emitters, of the plurality of emitters, of a channel, of the plurality of channels, vary across a width of the channel. The optical system includes a lens to receive light from the emitter array and a diffuser to receive light from the lens. The diffuser is configured to diffuse light along a length of the plurality of channels of the emitter array. The optical system includes a corrective optical element to receive light from the diffuser.
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
83.
Non-contact wafer-level burn-in comprising a wireless power transfer component
In some implementations, a semiconductor wafer includes a plurality of optical emitters, wherein an optical emitter, of the plurality of optical emitters, is associated with a receiver conducting medium for receiving wireless power transfer, wherein the receiver conducting medium is configured to couple to a wireless power transfer component for wireless power transfer at a common resonant frequency, and wherein the receiver conducting medium is configured to power the optical emitter to provide an optical output when the wireless power transfer is applied at the common resonant frequency.
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
In some implementations, a fiber amplifier system includes a fiber oscillator and a fiber amplifier coupled to an output end of the fiber oscillator. The fiber oscillator may include an active fiber having a first end and a second end, where the active fiber is to receive pump light from one or more optical sources; one or more high-reflectivity mirrors coupled to the first end of the active fiber; and multiple output coupler mirrors coupled to the second end of the active fiber. The one or more high-reflectivity mirrors and the multiple output coupler mirrors may form an optical cavity with the active fiber for generating laser light. The multiple output coupler mirrors may have respective center wavelengths that are different. The multiple output coupler mirrors may have respective reflection spectrums that are different.
H01S 3/30 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p. ex. l'effet Brillouin ou Raman stimulé
85.
MODE-DISCRIMINATING EMITTER DEVICE WITH AN ACTIVE EMITTER AND A PASSIVE EMITTER
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02335 - Montage à orientation directe, p. ex. montage à côté épitaxial au-dessus ou montage à jonction au-dessus
In some implementations, an optical device includes a two-zone vertical cavity surface emitting laser (VCSEL) with a set of emission zones configured to emit structured light forming a set of dots; a single-element collimating lens aligned to the two-zone VCSEL; and a tiling diffractive optical element (DOE) aligned to the single-element collimating lens, wherein the tiling DOE comprises a set of tile segments aligned to the set of emission zones, and wherein a tile segment, of the set of tile segments, is configured to project, from the set of emission zones toward portions of a target, the structured light forming the set of dots.
A method and system of determining a z-distance between an optical fiber and a substrate are presented. The method can include, for instance: obtaining an image that includes an end of the optical fiber and a reflection of the end of the optical fiber from a surface of the substrate, and processing the image to determine a z-distance along a z-axis between the end of the optical fiber and the substrate.
A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
In some implementations, an optical emitter includes a substrate with a surface that is off-cut relative to an orientation of a crystallographic plane of the substrate; a first set of layers disposed on the substrate and forming an active region of a light emitting junction, wherein the first set of layers includes a gallium-arsenic-nitrogen (GaAsN) material layer, wherein the GaAsN material layer forms a quantum well barrier, wherein the first set of layers further includes an indium-gallium-arsenic-nitrogen-antimony (InGaAsNSb) layer, wherein the InGaAsNSb layer is a strained, dilute nitride InGaAsNSb layer forming a quantum well; and a second set of layers forming a first distributed Bragg reflector (DBR) and a second DBR, wherein the active region is disposed between the first DBR and the second DBR.
H01S 5/18 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/187 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p. ex. lasers à émission de surface à cavité horizontale [HCSEL] à réflexion de Bragg
H01S 5/42 - Réseaux de lasers à émission de surface
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
90.
OPTICAL PUMP SOURCE OUTPUT POWER AND HEALTH MONITORING
In some implementations, a device may apply a modulation to an electrical current to derive a modulated electrical current. The device may supply the modulated electrical current to an optical pump source for an optical amplifier to cause the optical pump source to emit light based on the modulated electrical current. The device may generate a signal based on an optical power of the light emitted by the optical pump source. The device may filter the signal with respect to a feedback signal that is to result from the modulated electrical current to derive a filtered signal. The device may process the filtered signal to identify whether the feedback signal is present in the filtered signal based on a power indicated by the filtered signal. Whether the feedback signal is present indicates a state of the optical pump source.
H01S 3/0941 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p. ex. par une diode laser
H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente
91.
Vertical-cavity surface-emitting laser with dense epi-side contacts
An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/42 - Réseaux de lasers à émission de surface
92.
MULTIPLE FILTER PACKAGE CONFIGURATION FOR WAVELENGTH DIVISION MULTIPLEXER
A method, device, system, apparatus, a package, an optical device, an Erbium-doped fiber amplifier (EDFA), and a wavelength division multiplexer (WDM) as substantially described herein.
A wavelength division multiplexing (WDM) device includes a spacer (116); a first filter component (120); and a second filter component (122). The spacer(116) is configured to propagate a light beam (126) emitted from an input fiber (108) of the WDM device within the spacer (116) to the first filter component (120). The first filter component (120) is configured to filter the light beam (126) to create and direct a once-filtered light beam to the spacer (116). The spacer (116) is configured to propagate the once-filtered light beam within the spacer (116) to the second filter component (122). The second filter component (122) is configured to filter the once-filtered light beam to create and direct a twice-filtered light beam to the spacer (116). The spacer (116) is configured to propagate the twice-filtered light beam within the spacer (116) to another component of the WDM device, such as another filter component, a mirror component, or an output fiber (110) of the WDM device.
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
A laser module includes a laser submodule, a polarization beam combiner (PBC), a beam rotator, a grating, and an output fiber (e.g., each disposed on an internal surface of a floor of the laser module). The laser submodule is configured to emit an array pattern of beams, which the PBC is configured to combine into a vertical stack pattern of beams, which the beam rotator is configured to rotate into a horizontal stack pattern of beams, which the grating is configured to combine into an overlapped pattern of beams, which the output fiber is configured to emit. The vertical stack pattern of beams, the horizontal stack pattern of beams, and the overlapped pattern of beams are to transmit through the laser module parallel to a single common plane (e.g., that is parallel to the internal surface of the floor of the laser module).
As described herein, a mode field adapter (MFA) comprises a first fiber including a core associated with a fundamental mode field diameter and a cladding with a diameter that decreases toward a waist. The MFA comprises a second fiber including a core associated with a fundamental mode field diameter that matches the fundamental mode field of the first fiber at the waist and a cladding with a diameter that matches the diameter of the cladding of the first fiber at the waist and increases from the waist of the second fiber. The cladding of the first fiber may be adiabatically etched such that a core-to-cladding ratio of the first fiber changes over a length of the first fiber, and the core and the cladding of the second fiber may be adiabatically tapered such that a core-to-cladding ratio of the second fiber is constant over a length of the second fiber.
An optical device may include an outer box. The optical device may include an inner box within the outer box. The optical device may include a heating element on a surface of the inner box. The heating element may include one or more openings. The optical device may include one or more mounting pads. A mounting pad of the one or more mounting pads may be arranged in an opening of the one or more openings and mechanically couple the inner box to the outer box through the opening.
A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
An optical device may include a lens system. The optical device may include a first scanning component to receive an optical beam and to scan the lens system with the optical beam. The optical device may include a second scanning component to receive the optical beam from the lens system and to scan a field of view with the optical beam, where the lens system is positioned between the first scanning component and the second scanning component. The lens system may include a beam expander.
In some implementations, a device may generate a data set including at least modal gain values and modal loss values for a semiconductor optical amplifier (SOA) slice. The device may determine, based on the data set, respective widths for a plurality of slices of an SOA using an autoregressive model. A width, of the respective widths, for a slice, of the plurality of slices, may be associated with a maximum conversion efficiency achievable for the slice at a given current density. The device may generate information indicating a geometry for the SOA based on the respective widths for the plurality of slices.
A structured light system includes a camera module and a dot projection module. The dot projection module includes a submount, an emitter array disposed on the submount, and a diffractive optical element (DOE) disposed over the emitter array. The emitter array includes a plurality of emitters arranged in a periodic emitter pattern and the emitter array is oriented at a non-zero angle relative to a rectilinear axis of the submount.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
