The present invention relates to a light-emitting module applied to a heater block, and the heater block comprising same, and to a light-emitting module and a heater block comprising same, the light-emitting module comprising: a heat radiation unit (110) including an upper surface (110a), a lower surface (110b) and a side surface (110c), and having a first cooling flow path (111) therein; a substrate (120) which is disposed on the upper surface of the heat radiation unit (110) and which has at least a portion of a semiconductor light-emitting device (121) and of an upper electrode (122) thereon; a power distribution unit (130) disposed on the lower surface of the heat radiation unit (110); and a connection electrode (140) electrically connecting the upper electrode (122) to the power distribution unit (130) while enabling the substrate (120) and the power distribution unit (130) to be detachably fixed to the upper surface and the lower surface of the heat radiation unit (110), respectively, wherein the connection electrode (140) electrically connects the upper electrode (122) to the power distribution unit (130) by passing through the power distribution unit (130) and the lower surface (110b) of the heat dissipation unit (110), thereby improving heat dissipation characteristics and maintenance efficiency and simplifying an electrode connection structure.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
2.
HEATER BLOCK AND SUBSTRATE HEAT TREATMENT APPARATUS INCLUDING SAME
The present invention relates to a heater block which has excellent heat dissipation characteristics and is capable of precisely controlling the heating temperature, and a substrate heat treatment apparatus including same. The heater block of the present invention may comprise: a cooling plate unit having a cooling channel provided therein such that cooling water flows therethrough; a light-emitting module unit provided on the first surface of the cooling plate unit and configured to emit light toward the object to be heated; and a power supply module unit provided on the second surface of the cooling plate unit and configured to supply power to the light-emitting module unit.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
3.
HEATER BLOCK AND APPARATUS FOR HEATING SUBSTRATE HAVING THE SAME
The present disclosure relates to a heater block and an apparatus for heating a substrate having the same, and more particularly, to a heater block having excellent heat dissipation characteristics and capable of precisely controlling a heating temperature, and an apparatus for heating a substrate having the same. A heater block according to an exemplary embodiment includes a cooling plate provided with a cooling passage through which cooling water flows, a plurality of light emitting modules provided on a first surface of the cooling plate to emit light toward an object to be heated, and a plurality of power supply modules provided on a second surface of the cooling plate and electrically connected to the plurality of light emitting modules by passing through the cooling plate to supply power.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
4.
POWER CONTROL DEVICE FOR TEMPERATURE CONTROL, THERMAL PROCESSING SYSTEM HAVING THE SAME, AND TEMPERATURE CONTROL METHOD FOR THERMAL PROCESSING SYSTEM
The present disclosure relates to a power control device for temperature control capable of phase control compensation according to power fluctuations, a thermal processing system having the same, and a temperature control method for the thermal processing system. The power control device for temperature control includes a power control unit configured to control an amount of power supplied to a heating source by controlling a phase of AC power supplied from a power source and a power measurement unit connected to the power source and configured to measure the AC power, wherein the power control unit controls the phase of the AC power by compensating a phase angle according to a difference between a reference power value and the measured value measured by the power measurement unit.
G05D 23/20 - Commande de la température caractérisée par l'utilisation de moyens électriques avec un élément sensible présentant une variation de ses propriétés électriques ou magnétiques avec les changements de température
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
5.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present inventive concept relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
6.
Exhaust wall liner for semiconductor manufacturing apparatus
The present invention relates to a deposition module capable of uniformly depositing a source material on the entire substrate and a thin film deposition apparatus comprising same. The deposition module may comprise: a source material nozzle unit that extends in a first direction and sprays a source material; and a source material distribution line that distributes the source material in the first direction and supplies same to the source material nozzle unit, and the source material nozzle unit may comprise: a source nozzle plate that has an opening formed along the first direction; a source buffer unit that provides a diffusion space for the source material distributed and supplied from the source material distribution line; and a source blocking plate that has a larger area than the opening of the source nozzle plate and is provided on the source nozzle plate in the diffusion space of the source material.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
8.
Chamber wall liner for a semiconductor manufacturing apparatus
The present invention relates to a heater block capable of precise control of a heating temperature and a substrate device including the heater block. The heater block may include: a first laser module having multiple laser cells; a second laser module which has multiple laser cells and is provided around the first laser module; and a first and a second power source part for independently supplying power to the first laser module and the second laser module, respectively, wherein at least one among the first laser module and the second laser module is divided into multiple control areas each of which includes the one or more laser cells sharing an input terminal to which power is input, and the multiple control areas are controlled independently from each other.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
The present invention relates to a deposition device and a deposition method using a linear deposition source, wherein the deposition device may comprise: a substrate supporter by which a substrate is supported; a linear deposition source which includes a linear source gas nozzle part and a linear reactive gas nozzle part parallelly arranged in a first axial direction crossing the substrate and sprays each of a source gas and a reactive gas onto the substrate; a driving part for moving the substrate supporter in a second axial direction crossing the first axial direction; a position detection part for detecting the position of the substrate supporter in the second axial direction; and an injection control part for individually controlling gas injection of the linear source gas nozzle part and the linear reactive gas nozzle part according to the detected position of the substrate supporter in the second axial direction.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
Provided are an apparatus and method for forming a thin film. The apparatus for forming a thin film include a chamber configured to define a substrate processing space therein, a substrate support part connected to the chamber to support a substrate inside the chamber, a heat source part connected to the chamber to face the substrate support part, and a plasma generation part connected to the chamber to supply radicals between the substrate support part and the heat source part at at least two points.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
12.
MAGNETIC LEVITATION ROTATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS USING SAME
The present invention relates to a magnetic levitation rotation apparatus wherein a rotary part is capable of stable magnetic levitation rotation, and a substrate processing apparatus comprising same. The magnetic levitation rotation apparatus may comprise: a housing part including a cylindrical inner wall, a cylindrical outer wall provided outside the inner wall, and a bottom portion connecting the inner wall and the outer wall; a cylindrical rotary part accommodated in an accommodation space between the inner wall and the outer wall of the housing part, and floating by means of a magnetic force to rotate about a vertical axis; a fixing part provided on the outer side of the outer wall and providing a magnetic force to the rotary part; and a plurality of horizontal displacement sensor parts mounted on the fixing part and measuring the horizontal displacement of the rotary part.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
The present invention relates to a magnetic levitation rotating apparatus and a magnetic levitation rotating method capable of stable magnetic levitation rotation by compensating for a rotation error of a rotating unit, the magnetic levitation rotating apparatus comprising: a hollow rotating unit which levitates by means of magnetic force and rotates around a rotary shaft; a fixing unit provided outside the rotating unit so as to be horizontally spaced apart from the rotating unit, and comprising a permanent magnet for generating an attractive force on the rotating unit, and a horizontal position control coil which controls the horizontal position of the rotating unit by generating magnetic flux and adjusting the attractive force; a horizontal displacement sensor unit for measuring a horizontal displacement value of the rotating unit; a displacement value correction unit for correcting the measured horizontal displacement value of the rotating unit according to the shape tolerance of the rotating unit; a control unit which outputs a current output value for controlling the horizontal position of the rotating unit according to the corrected horizontal displacement value to be inputted; and a power supply unit which receives the current output value and provides a control current to the horizontal position control coil.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
14.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present invention relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
15.
LASER MACHINING SUCTION DEVICE AND LASER MACHINING APPARATUS COMPRISING SAME
The present invention relates to a laser machining suction device for suctioning process by-products caused by laser machining, and a laser machining apparatus comprising same, and the laser machining suction device may comprise: a hollow part for providing a laser passage toward a substrate; a suction path part separated from the hollow part such that the process by-products caused by laser machining flow therein; and a suction line communicating with the suction path part so that the process by-products having flowed into the suction path part are discharged therethrough.
B23K 26/142 - Travail par rayon laser, p. ex. soudage, découpage ou perçage en utilisant un écoulement de fluide, p. ex. un jet de gaz, associé au faisceau laserBuses à cet effet pour l'enlèvement de résidus
B23K 101/36 - Dispositifs électriques ou électroniques
16.
Apparatus for processing substrate and method for measuring temperature of substrate
Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.
The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
The present invention relates to an apparatus and method for forming a thin film, the apparatus comprising: a chamber having inside a substrate processing space; a substrate support unit connected to the chamber so as to support a substrate inside the chamber; a heat source unit connected to the chamber to face the substrate support unit; and a plasma generation unit connected to the chamber at at least two points so as to supply radicals between the substrate support unit and the heat source unit. The present invention can improve the uniformity of a thin film formed on the substrate.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
19.
Edge ring and heat treatment apparatus having the same
Provided are an edge ring and a heat treatment apparatus having the same. The edge ring includes a main body having a ring shape. The main body includes a substrate support part configured to support an edge of a bottom surface of a substrate, an outer band provided outside the substrate support part and having a top surface that is higher than a top surface of the substrate support part and is parallel to a top surface of the substrate supported by the substrate support part, an outer sidewall provided outside the outer band, and a groove part provided between the substrate support part and the outer band.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
20.
MULTI-BEAM PROCESSING METHOD AND MULTI-BEAM PROCESSING APPARATUS
The present invention relates to a multi-beam processing method and a multi-beam processing apparatus which can improve the uniformity of multi-beam processing by dividing a laser beam into multiple unit beams, the number of which is less than the number of processing points, to form a multi-beam, irradiating a first irradiation position with the formed multi-beam, and irradiating a second irradiation position partially overlapping the first irradiation position with the formed multi-beam.
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
G01K 1/00 - Détails des thermomètres non spécialement adaptés à des types particuliers de thermomètres
G01K 13/00 - Thermomètres spécialement adaptés à des fins spécifiques
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A gas spraying apparatus according to the embodiment of the present invention includes a spray part disposed and aligned on one side outside a substrate in the width direction of the substrate, and having a plurality of nozzles for spraying gas toward the substrate, and a spray control unit for automatically controlling whether or not each of a plurality of nozzles sprays gas such that a gas density distribution type in the width direction of the substrate becomes a targeted gas density distribution type by the gas sprayed through the plurality of nozzles. Therefore, according to the embodiment of the present invention, it is easy to carry out the process with a plurality of types of process types or a plurality of types of gas density distribution types, and a time for adjusting the open or close operation of the plurality of nozzles can be shortened.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
Provided are an emergency stop apparatus including a switch unit installed in a work space, electrically connected to a facility, and operable by pulling and a wire which is disposed in the work space so that tension is applied and of which at least one side is detachably mounted on the switch unit and an emergency stop method for quickly stopping the facility at a desired position within the work space in a manner of pulling or pushing the wire.
H01H 17/16 - Interrupteurs ayant un organe moteur flexible adapté uniquement pour la traction, p. ex. cordon, chaîne ayant un seul organe moteur flexible adapté pour être tiré à une extrémité uniquement
H01H 3/02 - Organes moteurs, c.-à-d. pour actionner le mécanisme d'entraînement par une force mécanique extérieure à l'interrupteur
H01H 89/00 - Combinaisons de plusieurs types d'interrupteurs électriques, de relais, de sélecteurs et de dispositifs de protection d'urgence, non couvertes par un des autres groupes principaux de la présente sous-classe
H01H 9/16 - Indicateurs de position, p. ex. "marche" ou "arrêt"
H01H 17/10 - Organe moteur, p. ex. une corde adapté pour être actionné par une partie du corps humain autre que la main, p. ex. le pied
H01H 3/32 - Mécanismes-moteurs, c.-à-d. pour transmettre la force motrice aux contacts
24.
Method of manufacturing shadow mask using hybrid processing and shadow mask manufactured thereby
The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.
C23C 14/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
G03F 7/12 - Production de formes d'impression pour sérigraphie ou de formes d'impression similaires, p. ex. stencils
B23K 26/352 - Travail par rayon laser, p. ex. soudage, découpage ou perçage pour le traitement de surface
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
Disclosed is a conductive adhesive film attaching device comprising: a target substrate; a support part for supporting the target substrate from below and fixing the target substrate; a supply part having a supply roller and disposed spaced apart from one side of an upper portion of the support part; a collection part having a collection roller and disposed, spaced apart from the supply part, on the other side of the upper portion of the support part; a conductive adhesive film in which a conductive adhesive film portion is disposed facing the target substrate and a protection film portion is attached to the reverse side of the facing portion, one side of the conductive adhesive film being connected to the supply roller and the other side being connected to the collection roller such that the conductive adhesive film moves a set travel distance from the supply part to the collection part; a cutting part positioned in the space between the supply part and the support part, and connected to a rotating body that performs a preset rotation in one direction and the reverse direction, the cutting part being rotatably connected to the rotation body so that at least the center of the cutting part is not connected to the rotation body, and thereby moving up-and-down in a straight line to avoid cutting at least the protection film portion; and a pressing part disposed above the conductive adhesive film, for pressing the conductive adhesive film toward the target substrate by moving in a straight line.
G02F 1/1345 - Conducteurs connectant les électrodes aux bornes de la cellule
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides
Disclosed is a laser bonding apparatus for aligning a first electrode part of a first substrate and a second electrode part of a second substrate and disposing an anisotropic conductive film between the first substrate and the second substrate so as to connect the same, the apparatus comprising: a pressing unit disposed at one side of the aligned first substrate or second substrate so as to press the first substrate or the second substrate by means of a linear movement; a laser unit for emitting a laser to the aligned anisotropic conductive film so as to apply heat to the same; and a control part for outputting a pressure control signal for allowing the pressing unit to apply differential pressure to the first substrate or the second substrate according to a laser emitting signal outputted when the laser unit emits the laser, and outputting, to the laser unit, a laser control signal for differentially changing the temperature of the laser according to the reception time of the laser emitting signal.
An embodiment according to the present invention relates to a laser bonding apparatus for connecting a first electrode of a first substrate and a second electrode of a second substrate by using a conductive film, the laser bonding apparatus comprising: a pressing unit for pressing the first electrode, a conductive film disposed on the first electrode, and the second electrode disposed on the conductive film; a laser irradiation unit for radiating a laser beam to the first electrode, the conductive film disposed on the first electrode, and the second electrode disposed on the conductive film, so as to heat the same; and a control unit for sequentially driving the pressing unit and the laser irradiation unit, wherein the control unit primarily drives the pressing unit and secondarily drives the laser irradiation unit for two hours after one hour has elapsed.
B23K 37/04 - Dispositifs ou procédés auxiliaires non spécialement adaptés à un procédé couvert par un seul des autres groupes principaux de la présente sous-classe pour maintenir ou mettre en position les pièces
B23K 101/36 - Dispositifs électriques ou électroniques
28.
ALIGNMENT INSPECTION APPARATUS AND ALIGNMENT INSPECTION METHOD USING SAME
According to one embodiment of the present invention, an alignment inspection apparatus, which uses indentations of conductive particles included in a conductive film arranged between a first electrode extending a predetermined length from a first substrate and a second electrode extending a predetermined length from a second substrate, comprises: an image capturing unit for capturing a plurality of indentation images formed along the first electrode or the second electrode by the conductive particles; a first straight line calculation unit for calculating a first straight line, which indicates a progress direction of the indentation images, by applying a least square method to the plurality of indentation images; a second straight line calculation unit for calculating a second straight line extending in the same direction as the extending direction of the first electrode or the second electrode; and an angle calculation unit for calculating the angle formed by the first straight line with respect to the second straight line.
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 3/42 - Recherche de la dureté ou de la dureté au rebondissement en effectuant des empreintes sous une charge permanente par des dispositifs de pénétration, p. ex. sphère, pyramide
The present invention relates to a method for manufacturing a metal shadow mask, and to a method for manufacturing a shadow mask having a mask pattern formed thereon, the subject matter being a method for manufacturing a shadow mask using a hybrid processing method, and a shadow mask manufactured thereby, the method for manufacturing a shadow mask comprising: a wet etching step for performing wet etching on the upper side of a base, thereby forming a wet etching pattern; and a laser processing step for performing laser processing on the lower side or the upper side of the base where the wet etching pattern is formed, thereby forming a laser processing pattern that is continuous to the wet etching pattern. Accordingly, wet etching and laser processing are hybridly used, and thus a productivity deterioration problem due to conventional laser processing processes is solved, and an effect of being able to provide a high-quality shadow mask by means of wet etching is shown.
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
30.
METHOD FOR MANUFACTURING SHADOW MASK USING HYBRID PROCESSING METHOD, AND SHADOW MASK MANUFACTURED THEREBY
The present invention relates to a method for manufacturing a metal shadow mask, and a shadow mask, and to a method for manufacturing a shadow mask having a mask pattern formed thereon, the subject matter being a method for manufacturing a shadow mask using a hybrid processing method, and a shadow mask manufactured thereby, the method for manufacturing a shadow mask comprising: a laser processing step for irradiating a laser beam on the upper side of a base, thereby forming a laser processing pattern on the base; and a wet etching step for performing wet etching on the lower side or the upper side of the base where the laser processing pattern is formed, thereby forming a wet etching pattern that is continuous to the laser processing pattern. Accordingly, laser processing and wet etching are hybridly used, and thus a productivity deterioration problem due to conventional laser processing processes is solved, and an effect of being able to provide a high-quality shadow mask by means of wet etching is shown.
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
31.
Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using same
The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 29/66 - Types de dispositifs semi-conducteurs
An apparatus and a method for manufacturing a shadow mask according to the present invention comprise: a step of positioning, on the top of a base, a masking part provided with a masking pattern which corresponds to a mask pattern to be manufactured; and a step of preparing, on the base, a mask pattern which corresponds to the masking pattern by irradiating a laser beam from the top of the masking part and treating the base with the laser beam, which has passed through the masking part, wherein a plurality of masking patterns are provided to have different widths, and the masking pattern of which the width is narrower towards the direction on which the base is positioned is provided so that the laser beam irradiated from the top of the masking part is irradiated on the base after passing through the plurality of masking patterns step by step. Moreover, the strength around a pattern is gradually adjusted using a phase shift mask and a slit mask, thereby enabling a taper-shaped process required for a deposition mask.
H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
The present invention is for forming a pattern made of a 3D structure on a workpiece by using a laser. A method of 3D patterning of a workpiece using a laser comprises: a first step in which a unit processing area is set on a workpiece; a second step in which processing is performed for a 3D structure included in the unit processing area until a laser beam reaches another boundary of the unit processing area, having started at one boundary of the unit processing area and moved along a first scan path; a third step which switches the direction of the laser beam to the following step and moves the laser beam to a second scan path by a step pitch; and a fourth step in which processing for the entire unit processing area is performed when the movement of the laser beam along an nth scan path is completed by repeating the second step and the third step.
H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
34.
Apparatus for substrate treatment and method for operating the same
The present invention relates to a substrate treatment apparatus and method which perform heat treatment on a substrate, and can accurately measure the temperature of the substrate even at a low temperature. An embodiment of the present invention includes a process chamber that has a substrate treatment space, a heating housing that contains a plurality of heating lamps for generating radiant energy, a window that is placed between the heating housing and the process chamber to maintain the air-tightness of the process chamber and transmit the radiant energy to be transferred to a substrate, a first pyrometer that measures a wavelength generated at the substrate in the process chamber, and converts the wavelength into substrate measurement energy, a second pyrometer that measures a wavelength generated at the window, and converts the wavelength into window measurement energy; and a heating controller that compensates for the window measurement energy in the substrate measurement energy, thereby calculating the temperature of the substrate itself, and uses the calculated temperature of the substrate itself to control the heating lamps.
This invention relates to an apparatus and method for cleaning a photomask. This apparatus, suitable for use in removing an adhesive residue from a photomask, includes a photomask disposed such that a surface thereof on which an adhesive residue is left behind is directed downwards, a metal plate formed adjacent to the adhesive residue, and a laser generator for irradiating a laser onto the metal plate so that the adhesive residue is removed by heat generated from the metal plate.
Provided are a substrate support and a substrate treating apparatus having the same. The substrate support includes an annular ring unit of which an inner diameter is greater than a diameter of the substrate, a plurality of protrusions protruding inward from an inner surface of the ring unit, the plurality of protrusions being spaced apart from each other, a plurality of support pins respectively disposed on the protrusion parts to face an edge of a bottom surface of the substrate, the plurality of support pins being exposed to upper sides of the protrusions, and a plurality of guide pins respectively disposed on the protrusions outside the side surface of the substrate. It may prevent the heat loss of the substrate from occurring, and the substrate support may be easily detached and repaired.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Disclosed is a calibrating apparatus which is adapted to remove a measurement deviation of a pyrometer, and more particularly, to an apparatus for calibrating a pyrometer, which calibrates a reference value so as to remove a deviation in a temperature measured in a pyrometer. The apparatus for calibrating a pyrometer includes a blackbody including a radiant space from which radiant energy is radiated, a body housing configured to receive the blackbody therein and including a light output wall having a light output port connected with the radiant space, a light output wall protecting cover configured to be coupled with the light output wall of the body housing so as to define a passage connecting the light output wall of the body housing and an outside environment, and a fixing member configured to fix the light output wall protecting cover to the light output wall of the body housing.
G01K 1/00 - Détails des thermomètres non spécialement adaptés à des types particuliers de thermomètres
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
G01D 18/00 - Test ou étalonnage des appareils ou des dispositions prévus dans les groupes
G01J 5/52 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant la comparaison avec des sources de référence, p. ex. pyromètres à disparition de filament
Disclosed is a calibrating apparatus which is adapted to remove a measurement deviation of a pyrometer, and more particularly, to an apparatus for calibrating a pyrometer, which calibrates a reference value so as to remove a deviation in a temperature measured in a pyrometer. The apparatus for calibrating a pyrometer includes a blackbody including a radiant space from which radiant energy is radiated, a body housing configured to receive the blackbody therein and including a light output wall having a light output port connected with the radiant space, a light output wall protecting cover comprising a transparent blocking plate disposed at a position opposite to the light output port so as to transmit a long wavelength of approximately 5 μm to approximately 20 μm may and configured to be coupled with the light output wall of the body housing, and a fixing member configured to fix the light output wall protecting cover to the light output wall of the body housing.
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
G01J 5/52 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant la comparaison avec des sources de référence, p. ex. pyromètres à disparition de filament
The present invention relates to a substrate treatment apparatus and method which perform heat treatment on a substrate, and can accurately measure the temperature of the substrate even at a low temperature. An embodiment of the present invention includes a process chamber that has a substrate treatment space, a heating housing that contains a plurality of heating lamps for generating radiant energy, a window that is placed between the heating housing and the process chamber to maintain the air-tightness of the process chamber and transmit the radiant energy to be transferred to a substrate, a first pyrometer that measures a wavelength generated at the substrate in the process chamber, and converts the wavelength into substrate measurement energy, a second pyrometer that measures a wavelength generated at the window, and converts the wavelength into window measurement energy; and a heating controller that compensates for the window measurement energy in the substrate measurement energy, thereby calculating the temperature of the substrate itself, and uses the calculated temperature of the substrate itself to control the heating lamps.
H01L 21/22 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
The present invention relates to a heater block and a substrate treatment apparatus, and more particularly to a heater block to perform heat treatment on a substrate and a substrate treatment apparatus having the same. According to embodiments of the present invention, it is provided a heater block for a substrate treatment apparatus having heating lamps on its one side to transfer heat to a target subjected to heat treatment, the heating lamps having different arrangement patterns in a plurality of regions on said one side.
F27B 5/14 - Aménagement des dispositifs de chauffage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
41.
Heater block for a rapid thermal processing apparatus
The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy. In addition, fully uniform temperature control is enabled, in terms of sector allocated temperature control, even when the area to be independently controlled is enlarged as opposed to conventional heater blocks, thereby simplifying the configuration of a temperature control circuit.
F26B 3/30 - Procédés de séchage d'un matériau solide ou d'objets impliquant l'utilisation de chaleur par radiation, p. ex. du soleil à l'aide d'éléments émettant des rayons infrarouges
According to the present invention, a horizontal adjusting part comprises: a deformation part which is able to be elastically deformed; a first connection part which has an internal space, is disposed at an upper side of the deformation part, and is coupled with the deformation part; and a second connection part which is disposed at a lower side of the deformation part and is coupled with the deformation part, wherein an upper part of the first connection part is connected with a first driving shaft which is able to move up and down, and a lower part of the second connection part is connected with a second driving shaft which is able to move up and down and has one end connected with an object to be horizontally adjusted. Therefore, according to the embodiments of the present invention, the deformation part is elastically deformed depending on an inclined direction of a substrate support plate, so that it is possible to easily adjust the substrate horizontally. Thus, when applying pressure to a laminated upper and a laminated lower substrate to bond the upper substrate and the lower substrate; it is possible to transfer a uniform weight to the entire upper substrate and lower substrate.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
43.
IMPRINT DEVICE AND METHOD FOR IMPRINTING USING SAME
The present invention relates to an imprint device and a method for imprinting using same. More particularly, the present invention relates to an imprint device, which can uniformly form a nano-pattern on an object to be printed, and a method for imprinting using same. According to one embodiment of the present invention, the imprint device comprises: a support unit that secures and moves the position of the object to be printed; and a template unit supporting a stamp, which is provided with a pattern on one side thereof, by vacuum adsorption, and sprays gas onto the stamp and pushes the other side thereof so that the one side of the stamp is uniformly pressed onto the object to be printed. In addition, the method for imprinting according to one embodiment of the present invention comprises the following steps: vacuum adsorbing the stamp provided with the pattern; securing the position of the object to be printed and moving same close to the stamp; and spraying gas onto the stamp and pressing so that the stamp comes into close contact with the object to be printed.
B29C 59/02 - Façonnage de surface, p. ex. gaufrageAppareils à cet effet par des moyens mécaniques, p. ex. par pressage
B29C 43/02 - Moulage par pressage, c.-à-d. en appliquant une pression externe pour faire couler la matière à moulerAppareils à cet effet pour la fabrication d'objets de longueur définie, c.-à-d. d'objets séparés
B29C 33/18 - Moules ou noyauxLeurs détails ou accessoires comportant des moyens incorporés pour positionner des inserts, p. ex. marquages contre la paroi du moule utilisant le vide
The present invention relates to a sputtering device having a dual chamber. The most salient feature of the present invention is that it is devised in such a way that processing can be carried out on a large-area substrate even in a device which occupies a small space because the space where pressure-adjustment processing has to be carried out is reduced, by dividing the chamber of the sputtering device into a basic chamber and a magnetron chamber and using the sputtering target as part of the dividing wall.
Disclosed is a magnetron sputtering target device for a large-sized substrate. The magnetron sputtering target device for the large-sized substrate of the present invention comprises: a sputtering target which is positioned to be separated from the large-sized substrate, and has a shape which covers all the thin film-formed parts of the large-sized substrate; a magnet which is positioned in the vicinity of the sputtering target to allow movement thereon; and a magnet moving means which moves the magnet so that the entire surfaces of the sputtering target may be scanned. According to the present invention, advantages include the small area occupied by the equipment and there is no need to expand the size of a chamber. Further, since the magnet moving means solves non-uniformity and inefficiency during the formation of thin films, which may occur when the large-sized substrate or the sputtering target does not move, the invention efficiently forms thin films and increases the quality of the formed thin films.
The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzagged line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are closely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy. In addition, fully uniform temperature control is enabled, in terms of sector allocated temperature control, even when the area to be independently controlled is enlarged as opposed to conventional heater blocks, thereby simplifying the configuration of a temperature control circuit.
The present invention relates to a heater block for a rapid thermal processing apparatus, wherein a plurality of lamp pockets (21) for accommodating heating lamps are arranged, and cooling water inlet ports (111a, 111b) and cooling water outlet ports (112a, 112b) are arranged such that the lamp pockets (21) are cooled by the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b). In detail, the cooling water inlet ports (111a, 111b) and the cooling water outlet ports (112a, 112b) are separately arranged into an upper layer and a lower layer, such that the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b) is divided into an upper layer and a lower layer. Preferably, cooling water dispersion means (140) are installed at entries of the cooling water inlet ports (111a, 111b) so as to disperse the cooling water in a lateral direction. According to the present invention, the cooling water flows separately in the upper layer and the lower layer to improve cooling efficiency, and particularly, lower portions of the lamp pockets, in which heat discharged by the heating lamps is concentrated, can be maximally cooled. In addition, the cooling water dispersion means prevents the formation of a dead zone, thereby uniformly cooling the entirety of the heater block.
The method of the present invention for controlling a heating lamp of rapid heat treatment equipment comprises: a step wherein a heating lamp group is divided into a plurality of subgroups to determine graphical data regarding input voltage versus the reference input current that is applied to the subgroups uniformly; a step wherein actual input current respectively applied to each group is measured to obtain graphical data regarding input voltage versus actual input current; a step wherein a difference value for calibration of each subgroup is obtained from the difference between the reference input current and the actual input current; and a step wherein the difference value for calibration is reflected to apply a voltage to said subgroup individually. According to the prevent invention, substrate heating takes place uniformly because differences of calibration are reflected in actual input current to apply a voltage to a subgroup.
Disclosed are an apparatus and method for preventing damage to the lamp of rapid heat treatment equipment. The most significant feature of the present invention is to provide an apparatus and method for preventing damage to a lamp in rapid heat treatment equipment, wherein the temperature of a quartz case comprising the lamp is sensitized to identify an erratic increase in the temperature so that problems with the lamp may be discovered early to take action. The apparatus and method according to the present invention, allows the possibility of preventing damage or contamination of surrounding components due to lamp explosion; decisions regarding lamp replacement are also facilitated so that productivity can be enhanced. In addition, uniform output of a lamp may be ensured so that product quality is enhanced.
In the rapid heat treatment apparatus according to the present invention, the pyrometer comprises a light receiving load that is used to receive radiated light emitted from a wafer; a light source that is installed to radiated light onto a wafer through the light receiving load; and a light sensing part that receives radiated light reflected after being radiated from the light source to the wafer and radiation light emitted from the wafer to measure the temperature of the wafer, wherein a transparent protection cap is installed on the light receiving load so that the light receiving load is not contaminated by any byproducts formed after the wafer is heated. According to the present invention, contamination is prevented by the transparent protection cap so that any difficulty experienced from replacing an expensive light receiving load is eliminated, and the need for initial setting of the pyrometer is also eliminated, so that process downtime is reduced and process efficiencies are enhanced.
The present invention relates to a laser-processing device. More specifically, the present invention relates to a laser-processing device which is used during the work of laser lift-off in which a thin film is separated from a substrate. The laser-processing device according to the present invention comprises: a laser-beam light source for emitting a laser beam; an optical system for forming the laser beam emitted from the laser-beam light source, and for processing the energy distribution; a stage for irradiating the laser beam which has been processed by means of the optical system, and for receiving a processing object which is to be processed by means of the irradiated laser beam; and a suction unit which is placed on the propagation pathway of the laser beam in such a way as to allow the passage of the laser beam processed by means of the optical system, and which has the task of sucking in scattered material produced during the processing of the processing object.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
brevets
