Abrégé

The present invention provides a chemical mechanical polishing composition, comprising: abrasive particles, a catalyst, a promoter, a polybasic acid, and water. A chemical mechanical polishing solution of the present invention can effectively remove silicon boride under acidic conditions, thereby adjusting polishing selectivity of the polishing solution to different materials.

Classes IPC  ?

• C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

Provided is a composition for removing etching residue, comprising: an organic solvent, a metal corrosion inhibitor, a chelating agent, an acid and water. The composition for removing etching residue can be used to remove residue after etching or ashing from the surface of a semiconductor substrate, as well as TiN or a mask composed of TiN on the surface of a semiconductor substrate after oxide etching or partial oxide etching. It has good cleaning ability for TiN, while having a low corrosion rate for metallic tungsten; the TiN/W etching rate selectivity ratio is greater than 10, and it has good compatibility with low-K materials. Moreover, the cleaning liquid composition has a large process operation window, and has broad application prospects in the field of semiconductor wafer cleaning.

Classes IPC  ?

• C11D 7/50 - Solvants
• C11D 7/26 - Composés organiques contenant de l'oxygène
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
• C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
• C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
• C23F 1/26 - Compositions acides pour les métaux réfractaires

Abrégé

Provided in the present invention is a metal plating composition. The metal plating composition comprises a leveling agent, wherein the leveling agent is a compound of formula (I), wherein R1 is selected from an alkyl and an aralkyl; R2 is selected from an alkyl and an aralkyl; R3 is selected from an alkyl and an aralkyl; R4 is selected from an alkyl and an aralkyl; and n is any integer selected from 1-200. By using the technical solution, the technical effects of no hole and defect, low impurities in a plating layer, good plating uniformity, a dense structure, a small degree of surface roughness, etc. can be achieved. The metal plating composition can have good thermal reliability and uniform plating capacity, and can solve the problem of hole opening sealing, wherein the "hole opening" refers to a concave feature comprising a through hole and a blind channel. The metal plating composition has good industrial use value.

Classes IPC  ?

• C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
• C25D 3/02 - Dépôt électrochimiqueBains utilisés à partir de solutions
• C25D 5/18 - Dépôt au moyen de courant modulé, pulsé ou inversé

Abrégé

1233 is selected from an alkyl and an aralkyl; and n is any integer selected from 1-1500. The metal plating composition can achieve the technical effects of no hole and defect, low impurities in a plating layer, good plating uniformity, a dense structure, a small degree of surface roughness, etc. The metal plating composition can have good thermal reliability and uniform plating capacity, and can solve the problem of hole opening sealing, wherein the "hole opening" refers to a concave feature comprising a through hole and a blind channel, and has good industrial use value.

Classes IPC  ?

• C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
• C25D 21/14 - Addition commandée des composants de l'électrolyte

Abrégé

The present invention provides an etching composition and the use thereof. The etching composition includes a hydroxy amine, a surfactant, a metal corrosion inhibitor, an amine pH regulator, an organic acid, and water. The etching composition of the present invention can be used in the process of cleaning a 7 nm or above cobalt layer, has a good cleaning capacity for polymer residues, metal oxides and fluorides after plasma ashing, and also has good compatibility with TiN and a Low-K material; and the technological operating window thereof is large.

Classes IPC  ?

• C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
• B08B 3/04 - Nettoyage impliquant le contact avec un liquide

Abrégé

The present invention provides a metal electroplating composition used for electrolytic copper coating, comprising a chip copper interconnect electroplating additive, the chip copper interconnect electroplating additive being selected from the compounds of formula I to formula V, R1, R2 and R3 being selected from alkyl or aralkyl, R4 being selected from hydrogen or a C1 to C4 alkyl, k being any integer from 1 to 10, and n being any integer from 1 to 20. Using the described technical solution, it is possible to achieve technical effects such as the absence of holes and defects, low impurities in the coating, excellent uniformity in plating, a dense structure, and low surface roughness. The metal electroplating composition may exhibit good thermal reliability and uniform plating capability, and is capable of addressing the issue of pore sealing, thereby exhibiting significant industrial application value.

Classes IPC  ?

• C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
• C25D 3/02 - Dépôt électrochimiqueBains utilisés à partir de solutions
• C25D 7/12 - Semi-conducteurs

Abrégé

Provided in the present invention is a metal plating composition, comprising a leveling agent, wherein the leveling agent is the compound of formula (I), where R1 is selected from hydrogen, an alkyl and an aralkyl; R2 is selected from an alkyl and an aralkyl; R3 is selected from a C1-C4 alkyl; and n is any integer selected from 1-20. By means of the above technical solution, the technical effects of no holes and defects, low impurities in a plating layer, good plating homogenization, a dense structure, a small degree of surface roughness, etc., can be achieved; and the metal plating composition has good thermal reliability and throwing power, and can solve the problem of orifice sealing, wherein an "orifice" refers to a concave feature comprising a through hole and a blind channel. The metal plating composition has good industrial application value.

Classes IPC  ?

• C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
• C25D 3/02 - Dépôt électrochimiqueBains utilisés à partir de solutions
• C25D 7/12 - Semi-conducteurs