A microphone assembly and an electronic device. The microphone assembly comprises at least one diaphragm (101), a back plate (102) disposed opposite the diaphragm (101), and at least one air release column (103) having one end fixedly connected to the back plate (102). In a direction perpendicular to a thickness direction of the diaphragm (101), an edge portion (1032) of the other end of the at least one air release column (103) is spaced apart from the diaphragm (101) by a preset distance, thereby forming at least one air release groove (1011).
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p. ex. systèmes micro-électromécaniques [SMEM, MEMS]
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques
2.
MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) SENSOR AND PREPARATION METHOD THEREFOR
Disclosed are a MEMS sensor and a preparation method therefor. The sensor comprises a device and a cap, wherein the device comprises a grounding electrode; and a functional layer, wherein the functional layer is electrically connected to the grounding electrode. The cap comprises: a second substrate; a second dielectric layer, which is located on a first surface of the second substrate; and a third conductive layer, which is located on the surface of the second dielectric layer that is away from the second substrate, wherein at least part of the third conductive layer penetrates the second dielectric layer to be electrically connected to the second substrate; and the surface of the third conductive layer that is away from the second dielectric layer is bonded with the functional layer, and the second substrate is electrically connected to the grounding electrode by means of the third conductive layer and the functional layer. By means of the MEMS sensor and the preparation method therefor in the present invention, batch grounding of the MEMS sensor is realized.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
3.
INERTIAL SENSOR PACKAGING METHOD AND INERTIAL SENSOR
Disclosed are an inertial sensor packaging method and an inertial sensor. The inertial sensor packaging method comprises the steps of: breaking the Si-O bond of at least one of a first medium portion (111) of a first bonding face (110) in an MEMS wafer and a second medium portion (211) of a second bonding face (210) in a cover body wafer; aligning and attaching the first bonding face (110) and the second bonding face (210), and adsorbing same together, such that the first medium portion (111) and the second medium portion (211) are pre-bonded via a dangling bond, so as to obtain a pre-bonded wafer; and performing a heat treatment on the pre-bonded wafer, so as to achieve permanent bonding of the first medium portion (111) and the second medium portion (211), and a first metal portion (112) in the first bonding face (110) and a second metal portion (212) in the second bonding face (210). By means of the inertial sensor packaging method and the inertial sensor, the electrical connection between the bonding faces is achieved while ensuring the sealing performance of the MEMS structure, and the process steps are simplified, which gives consideration to both high efficiency and high reliability.
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p. ex. systèmes micro-électromécaniques [SMEM, MEMS]
G01D 11/00 - Parties constitutives des dispositions pour la mesure qui ne sont pas spécialement adaptées à une variable particulière
Disclosed are a microphone assembly and an electronic device. The microphone assembly comprises a substrate, a diaphragm and a back plate. The diaphragm is located between the substrate and the back plate in the direction perpendicular to the plane where the substrate is located. At least one sound hole running through the diaphragm in the thickness direction is provided in a sound wave conduction region of the diaphragm. A partial region of the substrate forms a first electrode, and the first electrode is provided with at least one first hollowed-out region. A partial region of the back plate forms a second electrode, and the second electrode is provided with at least one second hollowed-out region. The sound wave conduction region of the diaphragm forms a third electrode. In the direction perpendicular to the plane where the substrate is located, projections of the first electrode, the third electrode and the second electrode overlap each other. According to the technical solution provided by the present invention, a differential capacitance solution of a single diaphragm is realized, and the performance of the microphone assembly is improved.
Disclosed are a microphone assembly and an electronic device. The microphone assembly comprises a substrate, a diaphragm and a back plate. The diaphragm is located between the substrate and the back plate in the direction perpendicular to the plane where the substrate is located. At least one sound hole running through the diaphragm in the thickness direction is provided in a sound wave conduction region of the diaphragm, a partial region of the substrate forms a first electrode, a partial region of the back plate forms a second electrode, and the sound wave conduction region of the diaphragm forms a third electrode. In the direction perpendicular to the plane where the substrate is located, projections of the first electrode, the third electrode and the second electrode overlap each other. According to the microphone assembly provided by the present invention, a differential capacitance solution of a single diaphragm is realized, and the performance of the microphone assembly is improved.
The present application relates to an integrated microelectromechanical system (MEMS) thermopile infrared detector chip, comprising a first chip and a second chip electrically bonded with each other, wherein the first chip is a MEMS infrared thermopile sensor chip, and the second chip is an integrated circuit chip. A first electrical bonding point located on the first chip and a second electrical bonding point located on the second chip are bonded with each other to form electrical connection; a first packaging ring located on the first chip and a second packaging ring located on the second chip are bonded with each other to form a cavity; and the first chip comprises an infrared thermopile, and the projection of at least part of the infrared thermopile on the surface of the first chip is located in the cavity. The present application further relates to a manufacturing method for the integrated MEMS thermopile infrared detector chip.
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p. ex. systèmes micro-électromécaniques [SMEM, MEMS]
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
7.
MICROPHONE STRUCTURE, PACKAGING STRUCTURE, AND ELECTRONIC APPARATUS
Disclosed in the present application are a microphone structure, a packaging structure, and an electronic apparatus. The microphone structure comprises a base component and a functional assembly, wherein the base component is provided with a sound hole; the functional assembly comprises a first functional assembly and a second functional assembly; and the first functional assembly comprises an acoustic device and a third functional assembly, and the second functional assembly comprises a second metal portion and a second insulating portion. By means of the present application, the antistatic discharge performance of a product can be improved, and the damage of electrostatic discharge to a device can be reduced.
Disclosed are a micro-electromechanical system (MEMS) structure and an MEMS microphone comprising same. The MEMS structure comprises a back plate; and a diaphragm located on one side of the back plate, wherein the diaphragm and the back plate forms a variable capacitor, the diaphragm comprises multiple first through holes and air release structures respectively corresponding to the first through holes, and the diaphragm further comprises one or more second through holes penetrating through the diaphragm. According to the MEMS structure and the MEMS microphone comprising same provided by the present application, the second through holes are formed in a central area of the diaphragm, and the first through holes and the air release structures are formed around the second through holes, such that in an electrostatic discharge (ESD) process, atmospheric pressure can be quickly released through the second through holes, and the first through holes and the air release structures around can also help to release air, thereby achieving the purpose of improving the ESD reliability.
The present invention provides an electronic device, comprising: a main body, provided with an airflow hole; a differential pressure sensor packaging structure, provided with a first through hole, the first through hole being in communication with the airflow hole to form an airflow passage; and at least one air discharge hole, being in communication with the airflow passage and enabling the communication between the airflow passage and the outside, so as to reduce the pressure of the airflow passage. The advantages of the present invention are: an air discharge hole in communication with an airflow passage is used to reduce the pressure of the airflow passage; only when the pressure of an airflow in the airflow passage reaches a high value, the pressure of an airflow acting on the differential pressure sensor packaging structure by means of the first through hole can cause the pressure difference sensed by the differential pressure sensor packaging structure to reach a starting threshold of the electronic device, and at this time, the electronic device can be started, thereby preventing the electronic device from being affected by an external interfering airflow and started by mistake.
Disclosed by the present application are a microelectromechanical structure, electronic cigarette switch, and electronic cigarette, said microelectromechanical structure comprising a substrate, having a cavity; a vibrating membrane, located on the substrate and covering the cavity; and a rear panel, located on the vibrating membrane, there being a gap between it and the vibrating membrane, the rear panel comprising an electrode plate and an insulating layer encasing the electrode plate, the electrode plate at least being electrically isolated from the vibrating membrane by an insulating layer. The microelectromechanical structure is provided with an insulating layer encasing the electrode plate in the rear panel, thus improving the problem of short-circuiting of the rear panel with the vibrating membrane in the microelectromechanical structure because of contaminants such as oil and dirt.
A package structure for a differential pressure sensor, and an electronic device are provided. The package structure includes: a substrate and a housing, an edge of the housing is fixed to a front side of the substrate and defines a first chamber with the substrate; and a pressure sensing element fixed to the front side of the substrate and disposed in the first chamber, the pressure sensing element is provided with a second chamber and a pressure sensing layer, the pressure sensing layer being disposed between the first chamber and the second chamber. The first chamber is connected with the outside via a first through hole, and the second chamber is connected with the outside via a second through hole.
G01L 13/06 - Dispositifs ou appareils pour la mesure des différences entre plusieurs valeurs de la pression des fluides en utilisant des éléments électriques ou magnétiques sensibles à la pression
G01L 19/06 - Moyens pour empêcher la surcharge ou l'influence délétère du milieu à mesurer sur le dispositif de mesure ou vice versa
12.
Bulk Acoustic Wave Resonator and Fabrication Method for the Bulk Acoustic Wave Resonator
Disclosed are a bulk acoustic wave resonator and a fabrication method for the bulk acoustic wave resonator. The fabrication method includes: preparing a cavity with a top opening on a first silicon wafer; preparing an insulating layer on an upper surface of a second silicon wafer, and preparing a resonant piezoelectric stack on an upper surface of the insulating layer; preparing a first silicon dioxide layer on an upper surface of the resonant piezoelectric stack; bonding a surface where the top opening of the cavity is located with an upper surface of the first silicon dioxide layer; and preparing a lead out pad of the first electrode and the second electrode.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/13 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
13.
BACK HOLE LEAD TYPE PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR
A back hole lead type pressure sensor and a manufacturing method therefor. The pressure sensor is manufactured using a through hole lead technology, wire-bonding-free SMT packaging is implemented, and the packaging size of the pressure sensor is reduced. In addition, piezoresistors (201, 601) of the pressure sensor are located in a sealing cavity (220, 630), and conductive pads (202, 602) are also electrically connected to an external structure by means of through holes (212, 612); therefore, the pressure sensor is less affected by the external environment, has good device stability, and can be used for monitoring the pressure in liquid or severe environment.
A differential pressure sensor package structure and an electronic device. The differential pressure sensor package structure comprises: a substrate (11) and a housing (1), the edge of the housing (1) being fixed on the front surface of the substrate (11), and a first cavity (6) being formed between the housing (1) and the substrate (11); and a pressure sensing element (2) fixed on the front surface of the substrate (11) and located in the first cavity (6), the pressure sensing element (2) having a second cavity (10) and a pressing sensing layer (201), and the pressure sensing layer (201) being located between the first cavity (6) and the second cavity (10). The first cavity (6) is communicated with the outside by means of a first through hole (4, 4a, 4b), and the second cavity (10) is communicated with the outside by means of a second through hole (9). The differential pressure sensor has a relatively small size, relatively low power consumption, and high reliability.
G01L 13/00 - Dispositifs ou appareils pour la mesure des différences entre plusieurs valeurs de la pression des fluides
G01L 13/06 - Dispositifs ou appareils pour la mesure des différences entre plusieurs valeurs de la pression des fluides en utilisant des éléments électriques ou magnétiques sensibles à la pression
15.
BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREOF
A bulk acoustic resonator and a manufacturing method thereof. The method comprises: providing a substrate (301); forming, on a surface of the substrate (301), a plurality of holes (302) arranged at intervals; performing heating processing to combine the plurality of holes (302) into at least one internal closed cavity (401); forming, on the substrate (301), a piezoelectric oscillator stack layer having an opening (701); and performing isotropic etching on a portion of the substrate (301) exposed at the opening (701), and after etching has proceeded to the closed cavity (401), continuing to perform isotropic etching on portions of the substrate (301) around the closed cavity (401) so as to form, at the surface of the substrate (301), a cavity (901) in communication with the opening (701), wherein the piezoelectric oscillator stack layer is at least partially positioned above the cavity (901). In the resonator, the formation of a large cavity at a surface of a substrate facilitates heat dissipation.
A pressure sensor and a manufacturing method therefor, wherein the method comprises: providing a substrate (1); forming a plurality of first holes (15) arranged at intervals on the surface of the substrate (1); performing a first heat treatment so as to combine the plurality of first holes (15) into a suspended first vacuum chamber (16); forming a trench (25) in communication with the first vacuum chamber (16) and an induction body (6) surrounded by the trench (25). The method simplifies the manufacturing process of a pressure-sensitive film. Meanwhile, the pressure-sensitive film formed by the heat treatment process is high in flatness, thinner in thickness, and can be as thin as 1 micron.
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G01L 1/22 - Mesure des forces ou des contraintes, en général en mesurant les variations de la résistance ohmique des matériaux solides ou des fluides conducteurs de l'électricitéMesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c.-à-d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
17.
BULK ACOUSTIC RESONATOR AND PREPARATION METHOD THEREFOR
A bulk acoustic resonator and a preparation method therefor. The preparation method comprises: providing a first silicon wafer, and preparing, on the first silicon wafer, a cavity having an opening at the top; providing a second silicon wafer, preparing an insulating layer on the upper surface of the second silicon wafer, and preparing a resonant piezoelectric stack on the upper surface of the insulating layer, the resonant piezoelectric stack comprising a piezoelectric film, and a first electrode and a second electrode which are respectively in contact with the piezoelectric film and are independent of each other; preparing a first silicon dioxide layer on the upper surface of the resonant piezoelectric stack, the upper surface of the resonant piezoelectric stack comprising one or more of the surface of the piezoelectric film, the surface of the first electrode, and the surface of the second electrode; bonding the surface where the opening of the cavity is located with the upper surface of the first silicon dioxide layer; and preparing lead-out bonding pads of the first electrode and the second electrode.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
18.
Differential condenser microphone with double vibrating membranes
A dual-diaphragm differential capacitive microphone includes: a back plate, a first diaphragm, and a second diaphragm. The first diaphragm is insulatively supported on a first surface of the back plate, where the back plate and the first diaphragm form a first variable capacitor. The second diaphragm is insulatively supported on a second surface of the back plate, where the back plate and the second diaphragm form a second variable capacitor. The back plate is provided with at least one connecting hole. The second diaphragm is provided with a recess portion recessed towards the back plate, where the recess portion passes through the connecting hole and is connected to the first diaphragm. The dual-diaphragm differential capacitive microphone achieves a higher signal-to-noise ratio.
A differential condenser microphone with double vibrating membranes, comprising: a backplate; a first vibrating membrane supported on a first surface of the backplate in an insulating manner, wherein the backplate and the first vibrating membrane constitute a first variable capacitor; and a second vibrating membrane supported on a second surface of the backplate in an insulating manner, wherein the backplate and the second vibrating membrane constitute a second variable capacitor; characterized in that: the backplate is provided with at least one connection hole; and the second vibrating membrane is provided with a recessed portion that recesses in the direction of the backplate, and the recessed portion penetrates the connection hole for connection to the first vibrating membrane in an insulating manner. The differential condenser microphone with double vibrating membranes has a higher signal to noise ratio.
Provided are a micro-silicon microphone and a manufacturing method thereof for solving a technical problem in which sensitivity and a manufacturing process of a micro-silicon microphone are affected by stress of the micro-silicon microphone. The micro-silicon microphone of the present invention comprises a vibration film layer. The vibration film layer comprises vibration beams and a vibration film. The vibration beams are uniformly arranged around an edge of the vibration film. A first end of the vibration beam is fixed to the edge of the vibration film. A second end of the vibration beam is fixed to a supporting structure.
The invention relates to a capacitive MEMS microphone and a method for manufacturing the same. The microphone includes: a substrate; a first dielectric supporting layer on the substrate; a movable sensitive layer formed on the first dielectric supporting layer and having a movable diaphragm extending within the air; a backplate disposed over the movable sensitive layer and spaced from the movable diaphragm; a chamber recessed from and extending through the substrate and the first dielectric supporting layer; and an impact resisting device connecting to the movable diaphragm. The impact resisting device is exposed downwardly and disposed above the chamber. The movable sensitive layer has a number of anchors formed around the movable diaphragm, a number of flexible beams each of which is employed to connect one of the anchors to the movable diaphragm, and a bonding portion connecting to the anchor.
H04R 7/20 - Dispositions pour monter ou pour tendre des membranes ou des cônes à la périphérie pour fixer une membrane ou un cône élastiquement à un support au moyen d'un matériau flexible, ressorts, fils ou cordes
22.
Integrated chip with micro-electro-mechanical system and integrated circuit mounted therein and method for manufacturing the same
The invention relates to an integrated chip with an MEMS and an integrated circuit mounted therein and a method for manufacturing the same. The method includes the steps of: S1: providing a first chip, wherein the first chip comprises a first substrate, an MEMS component layer formed on the first substrate and comprising a first electrical bonding point disposed on MEMS the component layer; S2: providing a second chip with an IC integrated circuit, wherein the second chip comprises a second lead layer and a second electrical bonding point; S3: bonding the first electrical bonding point and the second electrical bonding point; S4: processing a thinning operation for the bottom surface of the first substrate; and S5: forming an electrical connection layer electrically connected to an external circuit on the bottom surface of the first substrate.
H01L 29/84 - Types de dispositifs semi-conducteurs commandés par la variation d'une force mécanique appliquée, p.ex. d'une pression
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
23.
Chip with integrated circuit and micro-silicon condenser microphone integrated on single substrate and method for making the same
c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.
A feedback system for identifying an external force, includes an operation plate and a pressure-sensing unit. The pressure-sensing unit includes an elastic member supporting the operation plate and a pressure sensor inside the elastic member. The pressure sensor includes a pressure sensitive film. An inner side of the elastic member is filled with fluid material which acts on the pressure sensitive film. The operation plate is driven by the external force to be slant which extrudes the elastic member to deform so as to change fluid pressure of the fluid material limited in the elastic member, and such change of the fluid pressure can be sensed by the pressure sensitive film of the pressure sensor so as to identify the movement and the intensity of the external force.
G01L 1/02 - Mesure des forces ou des contraintes, en général par des moyens hydrauliques ou pneumatiques
G01L 1/22 - Mesure des forces ou des contraintes, en général en mesurant les variations de la résistance ohmique des matériaux solides ou des fluides conducteurs de l'électricitéMesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c.-à-d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 1/04 - Mesure des forces ou des contraintes, en général en mesurant la déformation élastique de jauges, p. ex. de ressorts
26.
Methods for manufacturing MEMS sensor and thin film thereof with improved etching process
A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
27.
Methods for manufacturing MEMS sensor and thin film and cantilever beam thereof with epitaxial growth process
A method for manufacturing a MEMS sensor and its thin film and cantilever beam includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an outer epitaxial growth process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
28.
Method of manufacturing a structure with an integrated circuit and a silicon condenser microphone mounted on a single substrate
A structure with an integrated circuit (IC) and a silicon condenser microphone mounted thereon includes a substrate having a first area and a second area. The IC is fabricated on the first area in order to form a conducting layer and an insulation layer. Both the conducting layer and the insulation layer further extend to the second area. The insulation layer is removed under low temperature in order to expose the conducting layer on which the silicon condenser microphone is fabricated. The silicon condenser microphone includes a first film layer, a connecting layer and a second film layer under a condition that the connecting layer connects the first and the second film layers. The first film layer and the second film layer act as two electrodes of a variable capacitance.
An electrostatic loudspeaker includes a backplate having a metal film acting as one electrode of a capacitor and defining a number of sound apertures therein; a diaphragm insulatively spaced a distance from the backplate to form the capacitor; the diaphragm comprising a metal film acting as the other electrode of the capacitor; a back chamber having a substrate and an insulative spacer for joining edge portions of the diaphragm and the substrate; a driving circuit element for converting electrical signals from exterior input pads into driving signals to drive the diaphragm to vibrate and sound; the driving circuit element being mounted on an inner surface of the substrate and being accommodated in the back chamber; and a first, second and third connection paths for respectively electrically connecting the driving circuit element with the two electrodes of the capacitor, and the exterior input pads. An electrostatic loudspeaker with two backplates is also disclosed.
A surface mountable package includes a base and a cover with a cavity defined thereby, and an acoustic transducer unit received in the cavity. The cover includes a first metal ring to enclose the acoustic transducer unit. The base includes a second metal ring to press against the first metal ring in order to form a metal shielding area. First and second metal connecting paths are formed electrically connected to the metal shielding area and the acoustic transducer unit, respectively. Besides, two pairs of first and second surface mountable metal electrodes are electrically connected to the first and the second metal connecting paths, respectively. As a result, the package can be selectively double surface mountable to a user's circuit board via the metal electrodes of the base or the metal electrodes of the cover.
brevets
