An ion source includes a vaporizer having a nozzle, and a plasma generation chamber having a projection portion that projects into the plasma generation chamber. The projection portion receives an end portion of the nozzle and includes one or more apertures in fluid communication with an interior of the plasma generation chamber.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source includes a vaporizer that produces a vapor from a solid raw material, and a plenum including a plenum chamber having a first wall through which the vaporizer is in fluid communication with an interior of the plenum chamber, and a second wall opposite the first wall. The second wall includes a plenum plate with a longitudinal aperture therein.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
An ion implanter for implanting ions into a substrate includes a transfer chamber that receives the substrate from and delivers the substrate to an outside of the ion implanter, an X-ray irradiator disposed in the transfer chamber that irradiates the substrate with X-rays before ion implantation, and a controller that stops X-ray irradiation by the X-ray irradiator or disables activation of the X-ray irradiator in response to a predetermined situation being detected in the transfer chamber or outside the transfer chamber.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source includes a vaporizer, an arc chamber, and an extraction electrode. The vaporizer includes a crucible and a heater. The crucible stores a solid material. The heater heats the crucible. The crucible has an interior space formed by a wall, an inlet connected to the wall that releases a reactive gas into the interior space, and an outlet connected to the wall that releases the reactive gas and a vapor of the reaction product generated by a reaction between the solid material and the reactive gas from the interior space. The interior space narrows toward at least one of the inlet and the outlet.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
An ion implantation apparatus for performing channeling ion implantation into a wafer after measuring a crystal orientation of the wafer and adjusting an inclination of the wafer based on a result of the crystal orientation measurement includes a transfer portion that is provided with a measurement position for measuring the crystal orientation of the wafer, the measurement position being between a first position and a second position on a transport path of the wafer, the transfer portion transporting the wafer in order from the first position, to the measurement position, to the second position in an ion implantation process on the wafer, and a controller that controls the transfer portion to transfer the wafer. The controller controls the transfer portion to start to move the wafer from the measurement position towards the second position before a crystal orientation measurement result of the wafer is output.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
7.
VAPORIZER, ION SOURCE AND METHOD FOR GENERATING ALUMINUM-CONTAINING VAPOR
An ion source includes an arc chamber including a gas inlet, a source of a chlorine containing gas, an aluminum containing component, and a pathway from the source of the chlorine containing gas to the arc chamber through the gas inlet. The pathway passes through the aluminum containing component before reaching the gas inlet, such that the chlorine containing gas flows through the aluminum containing component prior to entering the arc chamber.
A semiconductor manufacturing apparatus includes a wafer clamp including a mechanical clamp and an electrostatic chuck, and a controller that controls the wafer clamp to selective clamp a wafer using only the mechanical clamp based on a processing temperature of a wafer.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
An ion implanter includes an angle measurement apparatus that measures a first angle of an ion beam in a first direction and a second angle of the ion beam in a second direction, the first direction and the second direction being mutually orthogonal to a traveling direction of the ion beam, an angle corrector that is located in a beamline of the ion beam and corrects an angle of the ion beam in the first direction based on the first angle, a wafer holder that holds a wafer in a process chamber, a tilt device that is connected to the wafer holder and that rotates the wafer around a rotation axis parallel to the first direction, and a controller that controls the tilt device based on the second angle, crystal axis information of the wafer, and implantation recipe information.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A substrate transfer device includes a shaft member rotationally movable about a rotation axis, a first swing member coupled to a holder for holding a substrate, a first support member supporting the first swing member to be linearly displaced, a second swing member having a linearly moving part linearly displaceable, and a second support member supporting the second swing member to be linearly displaced The first support member is rotationally moved about the rotation axis integrally with the second support member together with the second swing member being linearly displaced with respect to the second support member in a manner interlocked with a linear movement of the linearly moving part, and the first swing member is linearly displaced with respect to the first support member via the shaft member, such that the holder is linearly displaced.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
11.
ION BEAM IRRADIATION METHOD AND ION BEAM IRRADIATION APPARATUS
An ion beam irradiation method includes irradiating, with an ion beam having a first irradiation energy, a rear member located behind an irradiation position in a state in which a target is retracted from the irradiation position, collecting particles generated by irradiating the rear member with the ion beam having the first irradiation energy by conveying a collecting member in a transport direction in front of the rear member, and irradiating, with an ion beam having a second irradiation energy, the target at the irradiation position.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A plasma source includes a chamber in which plasma is generated, a cathode provided in the chamber that emits electrons into the chamber, and an electromagnet provided around the chamber. The electromagnet includes a coil and magnetic flux passing members that cause a magnetic flux generated by energization of the coil to reach the inside of the chamber. A usage mode of one or more of the magnetic flux passing members is changeable.
An ion beam extraction electrode includes a first member including a first beam passage hole through which an ion beam passes, a second member positioned opposite the first member and including a second beam passage hole through which the ion beam passes, a heater partially or fully disposed between the first member and the second member, and a gas shutoff member that blocks a flow of a gas from entering a space between the first member and the second member.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An vaporizer includes a crucible, a heater that heats the crucible, a support member that supports the crucible and includes an internal space in which a pressure in the internal space can be changed, and a control device. The control device increases the pressure of the internal space when the heating of the crucible by the heater is stopped, compared to the pressure when the crucible is heated by the heater.
An ion source includes a vaporizer, an arc chamber, and a heat shield. The vaporizer includes a crucible containing an aluminum-containing material and a heater that heats the crucible. The crucible has a gas inlet and a vapor outlet. The arc chamber generates a plasma inside of the arc chamber. The vapor outlet outputs vapor into the arc chamber through a wall of the arc chamber, and the heat shield is provided between the vaporizer and the wall of the arc chamber.
An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.
An ion beam irradiation apparatus includes a plasma generation container in which plasma is generated, a vaporizer connected to the plasma generation container, a halogen gas supply passage through which a halogen gas is supplied to the vaporizer, an air supply passage through which air is supplied to the vaporizer, and an evacuation passage through which a reaction product produced through a reaction between the halogen gas and the air is evacuated to an outside of the ion beam irradiation apparatus.
A vaporizer includes a crucible in which an aluminum-containing solid material is placed, and a heater. The crucible includes a chlorine containing gas inlet and a vapor outlet. The heater heats the crucible.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
This substrate transfer apparatus (10) comprises a rod member (15) that operates so as to rotate about a rotation axis A1, a holder-side turning member (12) linked to a holder (11) for holding a substrate S, a holder-side support member (13) for supporting the holder-side turning member (12) in a state in which the holder-side turning member (12) is allowed to move linearly in a prescribed direction, a linear-motion-side turning member (22) having a linear-motion part (21) that moves linearly in one direction, and a linear-motion-side support member (23) that supports the linear-motion-side turning member (22) in a state in which the linear-motion-side turning member (22) is allowed to move linearly in a prescribed direction. The holder-side support member (13) operates so as to rotate about the rotation axis A1 integrally with the linear-motion-side support member (23), and at the same time, the linear-motion-side turning member (22) moves linearly relative to the linear-motion-side support member (23) in tandem with the linear-motion part (21) moving linearly in a first direction D1, and the holder-side turning member (12) moves linearly relative to the holder-side support member (13) via the rod member (15), whereby the holder (11) moves on one line.
B25J 5/02 - Manipulateurs montés sur roues ou sur support mobile se déplaçant le long d'un chemin de guidage
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
F16H 19/04 - Transmissions comportant essentiellement et uniquement des engrenages ou des organes de friction et qui ne peuvent transmettre un mouvement rotatif indéfini pour convertir un mouvement rotatif en mouvement alternatif et vice versa comportant une crémaillère et pignon
F16H 25/22 - Mécanismes à vis avec billes, rouleaux ou organes similaires entre pièces travaillant en conjugaisonÉléments essentiels pour l'utilisation de ces organes
22.
Hydrogen supply device, and ion beam irradiation apparatus equipped therewith
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
24.
Ion beam irradiation apparatus and program therefor
An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
27.
Wafer separating apparatus, and wafer separating method
A wafer separating apparatus and method are provided. The apparatus includes an electrostatic chuck, a separation structure and a control device. The electrostatic chuck electrostatically supports a wafer during wafer processing using a voltage having a polarity. The separation structure mechanically separate the wafer from the electrostatic chuck. The control device controls the electrostatic chuck to, after the wafer processing is completed, reduce a magnitude of the voltage with the polarity while the separation structure applies a force to the wafer to separate the wafer from the electrostatic chuck.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
28.
Beam profile determination method and ion beam irradiation apparatus
A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.
A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.
H05B 1/02 - Dispositions de commutation automatique spécialement adaptées aux appareils de chauffage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A heating device is provided. The heating device includes a conveyance member, first and second support members, and a heat reflecting plate. The first support member is provided on the conveyance member and supports a substrate during movement of the conveyance member. The second support member includes a heater and supports the substrate during processing of the substrate. The heat reflecting plate travels with the conveyance member and reflects heat from the heater toward the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
31.
Mass separator using retractable magnetic yoke on a beam bending path
d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.
An ion beam irradiation apparatus includes modules for generating an ion beam meeting a processing condition, and a machine learning part that generates a learning algorithm using, as an explanatory variable, a processing condition during new processing and a monitored value that indicates a state of a module during a last processing immediately before the new processing, and a basic operation parameter output part that uses the learning algorithm to output an initial value of a basic operation parameter for controlling an operation of the module.
A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.
A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.
An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.
H01J 37/36 - Tubes à décharge en atmosphère gazeuse pour nettoyer les surfaces pendant le dépôt des ions issus des matériaux introduits dans l'intervalle de décharge, p. ex. introduits par évaporation
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
A method and apparatus are provided. The method includes selectively supplying a neutralizing gas to a position on a trajectory of an ion beam between an extraction electrode system and an analysis slit based on a composition of a dopant gas introduced into an ion source that produces the ion beam. The apparatus includes the ion source, the extraction electrode system, the analysis slit, and a gas supply system that selectively supplies the neutralizing gas to the position on the trajectory.
An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.
An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.
A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.
H05B 31/26 - Action sur la forme de la décharge par des dispositifs de soufflage de gaz
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
A plasma generation system is provided that includes an elongated plasma chamber having a first elongated side wall substantially parallel to a longitudinal axis extending through the plasma chamber and a gas delivery device for delivering a gas to the plasma chamber via the first elongated side wall. The gas delivery device includes at least one input port for receiving a source of the gas and a plurality of output ports for delivering portions of the gas to the plasma chamber. The gas delivery device also includes a network of gas delivery paths comprising at least one branch point between the at least one input port and the plurality of output ports. The at least one branch point is directly connected to (i) an input node and (ii) at least two output nodes that are positioned offset from the branch point along the longitudinal axis.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/26 - Bombardement par des radiations ondulatoires ou corpusculaires
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direction thereof, each comprising permanent magnets radially spaced apart from each other to form spaces between adjacent permanent magnets thereof; and a cooling medium flow passage provided in the spaces that passes a cooling medium for cooling the chamber body.
H05H 1/11 - Dispositions pour confiner le plasma au moyen de champs électriques ou magnétiquesDispositions pour chauffer le plasma utilisant uniquement des champs magnétiques appliqués utilisant une configuration en aiguille
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
H05H 1/14 - Dispositions pour confiner le plasma au moyen de champs électriques ou magnétiquesDispositions pour chauffer le plasma utilisant uniquement des champs magnétiques appliqués dans lesquels l'enceinte est droite et comporte un miroir magnétique
G21B 1/05 - Réacteurs de fusion thermonucléaire avec confinement magnétique ou électrique du plasma
45.
Method for cooling semiconductor manufacturing apparatus and substrate support apparatus
A semiconductor manufacturing apparatus, which is provided with a first storage chamber that stores a substrate to be processed, a second storage chamber that stores a dummy substrate, a substrate support apparatus with a heating function that supports a substrate, and a substrate transport apparatus that transports the substrates between the storage chambers and the substrate support apparatus, is further provided with a controller which, in the event that the temperature of substrate processing in a preceding substrate processing step is higher than the temperature of substrate processing in a subsequent substrate processing step, operates the substrate transport apparatus to transport the dummy substrate, whose temperature is lower than the temperature of substrate processing in the preceding substrate processing step, prior to carrying out the subsequent substrate processing step.
H01L 21/425 - Bombardement par des radiations par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
An ion implanter (200) is provided that includes an ion source (210) configured to generate an ion beam and an analyzer magnet (202) defining a chamber (204) having a magnetic field therein. The chamber provides a curved path between a first end and a second end of the chamber. The ion source is disposed within the chamber of the analyzer magnet adjacent to the first end. The analyzer magnet is configured to bend the ion beam from the ion source within the chamber along the curved path to spatially separate one or more ion species in the ion beam while the ion source is immersed in the magnetic field of the analyzer magnet.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A heating device is provided. The heating device includes a conveyance member that conveys a substrate between a heating position and a non-heating position, a support member that is provided on the conveyance member and that supports the substrate, a heater provided at the heating position and operable to heat a first surface of the substrate, and a heat reflecting plate attached to the conveyance member in facing relation to a second surface of the substrate opposite to the first surface.
H05B 3/68 - Dispositions pour le chauffage spécialement adaptées aux plaques de cuisinière ou aux plaques chaudes analogues
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
49.
Beam current measuring device and charged particle beam irradiation apparatus
A beam current measuring device capable of performing measurement of a beam current distribution of a charged particle beam seamlessly and continuously in an arbitrary direction is provided. The beam current measuring device includes collector electrodes whose detection regions seamlessly continue in an arrangement direction thereof.
G01R 15/24 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs modulateurs de lumière
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
H01J 25/12 - Klystrons, c.-à-d. tubes à au moins deux résonateurs, sans réflexion du faisceau électronique, et dont le faisceau est modulé principalement dans sa vitesse dans la zone du résonateur d'entrée à faisceau électronique en forme de pinceau dans l'axe des résonateurs
An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 49/42 - Spectromètres à stabilité de trajectoire, p. ex. monopôles, quadripôles, multipôles, farvitrons
H01J 49/06 - Dispositifs électronoptiques ou ionoptiques
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
51.
Beam current density distribution adjustment device and ion implanter
A beam current density distribution adjustment device is provided. The device includes member pairs in a long side direction of a ribbon beam, the member pairs adjusting a beam current density distribution in the long side direction of the ribbon beam by using an electric field or a magnetic field, members of each of the member pairs being disposed with the ribbon beam in-between the members. Opposing surfaces of the member pairs adjacent to each other in the long side direction of the ribbon beam are partially not parallel to a traveling direction of the ribbon beam.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
C23C 14/54 - Commande ou régulation du processus de revêtement
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
To improve maintainability of an ion beam extraction electrode. An ion beam extraction electrode (E) is equipped with: an electrode unit (1) that is provided with openings which ion beams pass through; and a supporting frame (11) that fixes and supports the electrode unit (1). A cooling medium flow channel (12) is formed in the supporting frame (11), and the supporting frame is provided with a shift regulation unit (13) that limits, at the time when the electrode unit (1) is disposed on the supporting frame (11), a shift of the electrode unit (1) within a plane substantially perpendicular to the direction in which the ion beams pass through.
A plasma generator (1401) for an ion implanter is provided. The plasma generator includes an ionization chamber (1410) for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface (1420) of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator may include a thermionic emitter (1420a,b) with at least one surface which may or may not be exposed to the plasma, or an electron gun for generating a secondary plasma. The thermionic emitter may be constructed from a second non-metallic material. The plasma generator further may include an exit aperture (1430) for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.
A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
57.
Ion irradiation apparatus and ion irradiation method
An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
59.
Electrostatic chuck system and semiconductor fabrication device
An electrostatic chuck system comprising a chuck body 1 having a clamping face 4 for electrostatically clamping a substrate 5, an electrode portion 2 generating a clamping force on the clamping face 4, a temperature-regulating portion 3 regulating the temperature of the substrate 5 to maintain it at a predetermined level, and a controller 10 controlling the voltage applied to the electrode portion 2, wherein, prior to completion of the electrostatic clamping of the substrate 5 to the chuck body 1, a voltage waveform obtained by superimposing a first waveform, which changes in a stepwise, rectilinear, or quadratic manner between a first level and a second level having a larger absolute value than the first level, and a periodic second waveform, which may be any of a rectangular wave, a triangular wave, a saw-tooth wave, or a sine wave, is applied by the controller 10 to the electrode portion 2.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01T 23/00 - Appareils pour la production d'ions destinés à être introduits dans des gaz à l'état libre, p. ex. dans l'atmosphère
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
61.
Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof
An ion source is provided that includes at least one electron gun. The electron gun includes an electron source for generating a beam of electrons and an inlet for receiving a gas. The electron gun also includes a plasma region defined by at least an anode and a ground element, where the plasma region can form a plasma from the gas received via the inlet. The plasma can be sustained by at least a portion of the beam of electrons. The electron gun further includes an outlet for delivering at least one of (i) ions generated by the plasma or (ii) at least a portion of the beam of electrons generated by the electron source.
An ion source is provided that includes an ionization chamber and two magnetic field sources. The ionization chamber has a longitudinal axis extending therethrough and includes two opposing chamber walls, each chamber wall being parallel to the longitudinal axis. The two magnetic field sources each comprises (i) a core and (ii) a coil wound substantially around the core. Each magnetic field source is aligned with and adjacent to an external surface of respective one of the opposing chamber walls and oriented substantially parallel to the longitudinal axis. The cores of the magnetic field sources are physically separated and electrically isolated from each other.
An ion beam bending magnet provides a curved path through the magnet for bending a ribbon-shaped ion beam having its major cross-sectional dimension normal to the bending plane of the magnet. The magnet comprises a ferromagnetic yoke surrounding the beam path and having an internal profile in cross-section formed of four angled sides. These sides are angled to the major dimension of the ribbon beam passing through the magnet, so that the internal profile of the yoke is relatively wide in the center of the ribbon beam and relatively narrow near the top and bottom edges of the ribbon beam. Electrical conductors against the internal surfaces of the yoke provide a uniform distribution of electrical current per unit length along the angled sides of the profile, providing a substantially uniform magnetic bending field within the magnet yoke.
This ion beam irradiation device (10) is provided with a vacuum chamber (14) in which a conveyance tray (T) holding a substrate (S) is housed, a conveyance unit for conveying the conveyance tray (T) inside the vacuum chamber (14) in a conveyance direction, ion beam irradiation units (21L, 21U) which irradiate an ion beam at prescribed irradiation positions in the vacuum chamber (14), and position detection units (23A-23D) which detect the position of the conveyance tray (T). As the conveyance tray (T) is conveyed, the position detection units (23A-23D) image, at prescribed imaging positions, each of different indicators which indicate parts of the conveyance tray (T) and are arrayed in the conveyance direction, and detect the position of the conveyance tray (T) relative to the imaging positions on the basis of the imaged indicators.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p. ex. en verre
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
65.
Ion implantation method and ion implantation apparatus
In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process.
An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.
Provided is an ion beam irradiation apparatus wherein electron use efficiency is improved and ion beam spread due to space-charge effects is efficiently suppressed by effectively using the space in the vicinity of a magnet, while not requiring a special magnetic pole structure. The ion beam irradiation apparatus is provided with an ion source (2), a collimating magnet (6), and a plurality of electron sources (11). The electron sources (11) are disposed at positions, which are in a magnetic gradient region (K) formed in the upstream or downstream of the ion beam in the collimating magnet (6) and are outside of the passing region of the ion beam (IB). The electron irradiation direction is so set as to supply electrons to the magnetic field gradient region (K).
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Provided is an ion implantation device capable of adjusting the position of the center of an ion beam incident on a target to a desired position while maintaining the angle of incidence of the ion beam incident on the target at a desired angle by preventing the deflection center position from changing significantly even when the ion beam is accelerated and decelerated, and particularly decelerated. An ion implantation device provided with an electrostatic acceleration tube (3) that adjusts an ion beam (IB) drawn from an ion source (1) to desired energy, deflects and causes the ion beam to be incident on a target (T) is configured in such a manner that a deflection electrode (5) constituting part of the electrostatic acceleration tube (3) is provided with a first deflection electrode (51) and a second deflection electrode (52) that are provided so as to sandwich the ion beam (IB) therebetween and are set at potentials different from each other, the second deflection electrode (52) is provided on the side to which the ion beam (IB) is deflected and is provided with an upstream electrode (521) provided upstream of the ion beam (IB) and a downstream electrode (522) provided downstream away from the upstream electrode, and the potentials of the upstream electrode (521) and the downstream electrode (522) are independently settable.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
72.
ION IMPLANTATION METHOD, AND ION IMPLANTATION APPARATUS
Disclosed is an ion implantation method, which can form in the plane of a substrate, without using the step rotation of a plate, a circular implantation region and an outer-circumference implantation region which encloses the circular implantation region and has a dosage different from that of the circular implantation region. The ion implantation method makes variable the scanning rate of an ion beam (4) in the plane of a substrate (2), so that the scanning rate distribution, as taken in an X-direction per one-way scan or reciprocal scans of the ion beam (4) in the plane of the substrate (2) is varied according to the position of the substrate (2) in a Y-direction, thereby to form in the face of the substrate the circular implantation region and an outer-circumference implantation region which encloses the circular implantation region and has the dosage different from that of the circular implantation region.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.
Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.
Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.
A method for fabricating a field emission electron source comprises an ion implantation step for implanting carbon ions (40) at least in the tip portion of an emitter (18) after the emitter (18) is formed principally of silicon. When the coordinates of points P1-P6 are represented, respectively, by (energy, implantation quantity) on an orthogonal coordinate having the energy (unit: keV) of the carbon ions (40) as one axis and the implantation quantity (unit: x1017 ions/cm2) as the other axis, the carbon ions (40) are implanted within a range surrounded by connecting six points, i.e., P1(5, 0.8), P2(5, 1.5), P3(10, 2.5), P4(15, 3.0), P5(15, 2.0) and P6(10, 1.6).
A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole, an antenna disposed within the plasma generating container for radiating a high frequency wave, an antenna cover made of an insulator and covering a whole of the antenna, a DC voltage measuring device for measuring a DC voltage between the antenna and the plasma generating container, and a comparator for comparing the DC voltage with a reference value, and outputting an alarm signal when an absolute value of the DC voltage value is larger than the absolute value of the reference value.
C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
80.
Method and apparatus of measuring beam current waveforms
Beam detectors configuring a beam monitor are connected to a single current measurement apparatus through respective switches. If a width of a beam incident hole of each of the beam detectors 32 in the X direction is Wf, a gap between the beam incident holes of adjacent beam detectors in the X direction is Ws, a beam width of the ion beam in the X direction is Wb, a total number of beam detectors is “p”, and “n” is an integer of 0≦n≦(p−2) and satisfying Wb<{n·Wf+(n+1)Ws}, a measuring process of receiving the ion beam by the beam monitor and measuring the waveforms of the beam currents flowing into the current measurement apparatus in a state in which the plurality of switches skipped by “n” are simultaneously switched ON and a switching process of switching the switches simultaneously switched ON under the condition, are repeated.
An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereof are opposite between the first magnet and the second magnet.
A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter. By using these results, an angle deviation, a diverging angle, and/or a beam size in the y direction of the ion beam can be obtained.
An ion implantation apparatus in which the divergence in the Y-direction due to the space charge effect of the ion beam is compensated between the target and the ion beam deflector where the ion beam is separated from neutral particles and thereby the ion beam transportation efficiency is enhanced. The ion implantation apparatus comprises a beam parallizer (14) for converting an ion beam (4) scanned in the X-direction is bent back into a parallel ion beam by a magnetic field and outputting an ion beam (4) having a ribbon shape. The beam parallizer (14) also serves as an ion beam deflector for separating the ion beam (4) and neutral particles by the deflection of the ion beam (4) by the magnetic filed. Near the exit of the beam parallizer (14), electrodes are so disposed as to be opposed to each other in the Y-direction, with the space where the ion beam (4) passes interposed. Thus, an electrostatic lens (30) for converging the ion beam (4) in the Y-direction is provided.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from -15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is -).
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Provided is an ion source which can generate an ion beam having a large width, a large beam current and excellent uniformity in beam current distribution in the width direction, and furthermore, can lengthen the life of a cathode. An ion source (2a) is provided with a plasma generating container (6) having an ion extracting port (8) extending in an X direction; a magnet (14) for generating a magnetic field (16) along the X direction in the container (6); indirectly heating cathodes (20), which are arranged on the both sides of the plasma generating container (6) in the X direction and are used for generating plasma (10) in the container (6) and for increasing/reducing density of the plasma (10) as a whole; and a plurality of filament cathodes (32), which are arranged in parallel along the X direction in the plasma generating container (6), and are used for generating the plasma (10) in the container (6) and for controlling density distribution of the plasma (10).
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Semiconductor manufacturing machines; ion implantation machines for manufacturing semiconductors, liquid crystal panel manufacturing machines Repair or maintenance of semiconductor manufacturing equipment, ion implantation equipment for manufacturing semiconductors, and liquid crystal panel manufacturing equipment
