Provided is a polishing composition capable of quickly removing an oxide film even at a low abrasive grain concentration. This polishing composition contains a silica having a silanol group density of 2.0 OH/nm2 or more, and an organic silicon compound having, at an end thereof, an amino group, methyl amino group, dimethyl amino group, or quaternary ammonium group, wherein the organic silicon compound has two or more alkoxyl groups or hydroxyl groups bonded to a Si atom thereof. Note that the quaternary ammonium group of the organic silicon compound does not have an alkyl group having two or more carbon atoms.
A polishing composition for polishing resin, wherein: the polishing composition contains alumina abrasive grains, a dispersant, and water; and the ratio of the primary average particle size of the alumina particles in the alumina abrasive grains and the average particle size of the alumina particles measured by dynamic light scattering is 1:6.0-1:100.
This polishing pad is capable of polishing an article to be polished while rotating as a polishing slurry is supplied, wherein: the polishing pad is provided with a polishing layer having a polishing surface that is capable of polishing the article to be polished; and the polishing surface has recesses disposed in concentric circles that have a radius of a desired length and are centered about a center of rotation when the polishing pad rotates when the article to be polished is being polished, and/or has through-holes passing through the polishing layer.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
Provided is a polishing composition capable of reducing device vibrations. This polishing composition comprises colloidal silica, a water-soluble polymer, a basic compound, water, and a vibration suppression agent which is a polymer having an ethylene oxide group and a weight average molecular weight of 1,500 to 30,000. The molar concentration of the vibration suppression agent is 6.9 × 10-10mol/g or higher. The product of the mass concentration of the vibration suppression agent and the weight average molecular weight of the ethylene oxide group portion per molecule of the vibration suppression agent is 8.0 × 10-2 or greater. In the vibration suppression agent, the proportion occupied by the ethylene oxide group within alkylene oxide groups is 80% or greater in terms of weight average molecular weight.
Provided is a slurry for polishing, which is used for polishing of an interlayer insulating film, and which contains silica abrasive grains and organic ammonium cations that have a molecular weight of 155 or less.
Provided is a polishing composition which can further reduce minute defects and haze in a polished semiconductor wafer. The polishing composition comprises abrasive grains, a basic compound and a vinyl alcohol-based resin having a 1,2-diol structural unit represented by general formula (1), wherein the vinyl alcohol-based resin has a molar concentration of a structural unit represented by general formula (2) of 2 mol% or greater relative to the total structural units. In general formula (1): R1, R2and R3independently represent a hydrogen atom or an organic group; X represents a single bond or a bonding chain; and R4, R5and R6 independently represent a hydrogen atom or an organic group.
This abrasive composition for abrading a resin and copper or a copper alloy, comprises alumina abrasive grains, glycine, an anionic surfactant, and water.
This abrasive composition for abrading a resin and copper or a copper alloy, comprises alumina abrasive grains, glycine, hydrogen peroxide water, and water.
The present invention is a polishing pad which comprises a polyurethane resin foam, and which has a polishing surface that is configured of the surface of the polyurethane resin foam. This polishing pad is configured such that the polyurethane resin foam has a tanδ of 0.24-0.60 at 25°C.
The present invention is a polishing cloth provided with, as forming materials: a nonwoven fabric; and a resin impregnating the nonwoven fabric, wherein the existence rate of the forming materials in an area from the center portion in the thickness direction to one surface is 30-60%, and the difference between the maximum value and the minimum value of the existence rate in the thickness direction is 10% or lower.
A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.
A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, an inorganic alkali compound, polyglycerol, and a multi-chain polyoxyalkylene alkyl ether. It is preferable that the multi-chain polyoxyalkylene alkyl ether be at least one selected from polyoxyalkylene methyl glucoside and polyoxyalkylene polyglyceryl ether. The inorganic alkali compound may be at least one compound selected from hydroxides of alkali metals, salts of alkali metals, hydroxides of alkaline earth metals, and salts of alkaline earth metals.
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, a basic compound, and polyglycerol. The mass ratio of silica to polyglycerol is not more than 0.9. The basic compound may be at least one compound selected from hydroxides of alkali metals, salts of alkali metals, ammonia, amines, ammonium salts, and quaternary ammonium hydroxides. It is preferable that the polishing composition further include a polyhydric alcohol which is a nonionic surfactant.
Provided is a polishing composition which enables the achievement of an excellent wafer shape, while maintaining an adequate polishing rate and surface smoothness. This polishing composition contains abrasive grains, a basic compound, and two or more water-soluble polymers; the concentration ratio in term of weight percentage of the abrasive grains to each one of the two or more water-soluble polymers, namely (abrasive grain):(water-soluble polymer) is 1:0.0001 to 1:0.0010; one of the two or more water-soluble polymers is a water-soluble polymer wherein the number of hydroxy groups or lactam structures in each molecule is less than 10; and another one of the two or more water-soluble polymers is a water-soluble polymer wherein the number of hydroxy groups or lactam structures in each molecule is 10 or more.
Provided is a polishing composition capable of attaining a high polishing rate. The polishing composition comprises abrasive silica grains, a pH regulator, and water. The affinity AV between the abrasive silica grains and the water is 0.51 or higher, the affinity AV being represented by equation (1). AV=Rsp/TSA (1) In equation (1), Rsp is represented by equation (2) and TSA is the total surface area of the abrasive silica grains. Rsp=(Rav/Rb)-1 (2) In equation (2), Rav is the reciprocal of the NMR relaxation time of the abrasive silica grains in a dispersed state and Rb is the reciprocal of the NMR relaxation time of the abrasive silica grains in an undispersed state.
The purpose of the present invention is to provide a polishing roll capable of achieving, for example, three-dimensional polishing of a hard material such as sapphire glass at a high polishing rate. The present invention provides a cylindrical polishing roll capable of rotating about a central axis, characterized in that the polishing roll includes a core part serving as a central axis to which a torque is applied, an intermediate part having a cross-section concentric with the core part, and a polishing part disposed on the outer peripheral surface of the intermediate part, and the intermediate part is made of a cushion material softer than the polishing part.
The present invention is a polishing pad formed by foamed polyurethane, with a content of S phase in the foamed polyurethane, as determined by pulsed NMR measurement at 25° C., exceeding 70%.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
C08G 18/79 - Polyisocyanates ou polyisothiocyanates contenant des hétéro-atomes autres que l'azote, l'oxygène ou le soufre de l'isocyanate ou de l'isothiocyanate de l'azote caractérisés par le polyisocyanate utilisé, celui-ci contenant des groupes formés par oligomérisation d'isocyanates ou d'isothiocyanates
C08G 18/76 - Polyisocyanates ou polyisothiocyanates cycliques aromatiques
C08G 18/78 - Polyisocyanates ou polyisothiocyanates contenant des hétéro-atomes autres que l'azote, l'oxygène ou le soufre de l'isocyanate ou de l'isothiocyanate de l'azote
C08G 18/73 - Polyisocyanates ou polyisothiocyanates acycliques
C08G 18/75 - Polyisocyanates ou polyisothiocyanates cycliques cycloaliphatiques
C08G 18/42 - Polycondensats contenant des groupes ester carboxylique ou carbonique dans la chaîne principale
The present invention is a polishing pad or the like, which comprises a pad main body that is formed of a polymer body containing a polyurethane resin and cerium oxide particles. The pad main body is a part that constitutes a polishing surface; and the cerium oxide particles are contained in the polymer body in the form of primary particles and secondary particles, in each of which a plurality of primary particles aggregate.
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24B 37/20 - Tampons de rodage pour travailler les surfaces planes
B24D 3/00 - Propriétés physiques des corps ou feuilles abrasives, p. ex. surfaces abrasives de nature particulièreCorps ou feuilles abrasives caractérisés par leurs constituants
B24D 3/32 - Propriétés physiques des corps ou feuilles abrasives, p. ex. surfaces abrasives de nature particulièreCorps ou feuilles abrasives caractérisés par leurs constituants les constituants étant utilisés comme agglomérants et étant essentiellement organiques en résines à structure poreuse ou alvéolaire
B24D 11/00 - Caractéristiques de construction des matériaux abrasifs flexiblesCaractéristiques particulières de la fabrication de ces matériaux
C03C 19/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par des procédés mécaniques
Provided is a polishing composition capable of polishing a sapphire wafer at an excellent polishing rate. The polishing composition contains silica particles, a glycol ether compound, and water. The content of glycol ether compound in the polishing composition is 0.1 mass percent to 10 mass percent inclusive.
The present invention is a polymer body or the like containing a polyurethane resin that is provided with first constituent units derived from a compound containing a hydroxyl group, and with second constituent units derived from a compound containing an isocyanate group, one or more of the first constituent units being derived from an organic cation containing a hydroxyl group and/or from an organic anion containing a hydroxyl group.
Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.
Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.
Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.
A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
Provided is a polishing composition that can suppress surface defects and reduce haze. A polishing composition that includes: abrasive grains; at least one type of water-soluble polymer selected from among vinyl-alcohol-based resins that have a 1,2-diol structural unit; and an alkali compound. The average particle size, as measured by dynamic light scattering, of the particles of the polishing composition is 55 nm or less. The polishing composition ideally also includes a non-ionic surfactant. The polishing composition ideally also includes a polyhydric alcohol.
Provided is a polishing composition that can suppress surface defects and reduce haze. A polishing composition that includes: abrasive grains; at least one type of water-soluble polymer selected from among vinyl-alcohol-based resins that have a 1,2-diol structural unit; a polyhydric alcohol; and an alkali compound. The polishing compound ideally also includes a non-ionic surfactant.
This system for refining a polishing pad material is equipped with a melting device for melting a solid material introduced thereto, and a homogenization device for homogenizing the material melted by the melting device, and is configured in a manner such that: the amount of material to be homogenized which the homogenization device can process is greater than the amount of material to be melted which the melting device can process; and the homogenization device stirs and homogenizes the material melted by the melting device.
B29B 7/08 - MélangeMalaxage discontinu, avec dispositifs mécaniques de mélange ou de malaxage, c.-à-d. de type travaillant par charges avec dispositifs de mélange ou de malaxage mobiles à secousses, oscillants ou vibrants
B24D 11/00 - Caractéristiques de construction des matériaux abrasifs flexiblesCaractéristiques particulières de la fabrication de ces matériaux
B29B 13/10 - Conditionnement ou traitement physique de la matière à façonner par broyage, p. ex. par triturationConditionnement ou traitement physique de la matière à façonner par tamisageConditionnement ou traitement physique de la matière à façonner par filtration
A filtration device equipped with a filtration part that has a filtering material, and a holder that holds the filtration part and forms a channel in which a fluid passes through the filtering material of the filtration part, the filtration device being characterized in that the diameter of the pores in the filtering material at the downstream end position of the filtration part is smaller than the diameter of the pores in the filtering material at the upstream end position of the filtration part.
B01D 29/50 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants à plusieurs éléments filtrants caractérisés par leur agencement relatif
B01D 29/01 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants avec des éléments filtrants plats
This device for melting a polishing pad material is equipped with a melting unit for melting a solid material, a channel part through which the material melted by the melting unit flows, and a filtration part that is fluidly connected to the channel part and has a filter body for filtering the material that is melted by the melting unit. Furthermore, the channel part has a circulation part for circulating the material that is melted by the melting unit, and the filtration part is fluidly connected to the circulation part.
B29B 13/10 - Conditionnement ou traitement physique de la matière à façonner par broyage, p. ex. par triturationConditionnement ou traitement physique de la matière à façonner par tamisageConditionnement ou traitement physique de la matière à façonner par filtration
B24D 11/00 - Caractéristiques de construction des matériaux abrasifs flexiblesCaractéristiques particulières de la fabrication de ces matériaux
The present invention is an abrasive pad formed of foamed polyurethane, the proportion of the S phase content of the foamed polyurethane exceeding 70%, as determined by pulsed NMR at 25°C.
A polishing composition for polishing a work including an oxide film and a nitride film, the composition having a pH of 2.0 or higher and containing silica that shows a positive zeta potential.
This polishing pad is configured so that a plastic deformation area (A) that is calculated using the mathematical formula (1) indicated below is 665 or less when the tensile stress of a polishing layer directly prior to breakage when tensile force acts thereon is defined as the maximum stress (S1) (MPa), the tensile stress that occurs in the polishing layer that has begun to plastically deform is defined as the yield point stress (S2) (MPa), the elongation amount of the polishing layer from when tensile force begins acting thereon until directly prior to breakage thereof is defined as the maximum elongation amount (E1) (mm), and the elongation amount of the polishing layer from when tensile force begins acting thereon until plastic deformation thereof begins is defined as the yield point elongation amount (E2) (mm). A = (S1 - S2) × (E1 - E2)/2
A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point:
9 denotes an alkyl group)).
The present invention includes hydroxyethyl cellulose, water, and abrasive grains. The hydroxyethyl cellulose has a molecular weight of at least 500000, but not more than 1500000. The proportion of the hydroxyethyl cellulose adsorbed on the abrasive grains is at least 30%, but not more than 90%.
This polishing composition includes hydroxyethyl cellulose, water, and abrasive grains. The hydroxyethyl cellulose has a molecular weight of at least 500000, but not more than 1500000. The mass ratio of the hydroxyethyl cellulose to the abrasive grains is at least 0.0075, but not more than 0.025.
The invention of the present application relates to: a polishing composition comprising water and silica, wherein the silica has a BET specific surface area of 30 m2/g or more and a NMR specific surface area of 10 m2/g or more; and a polishing method using the polishing composition. In the polishing composition according to the invention of the present application, silica to be used is one having a BET specific surface area falling within the above-mentioned range and also having a NMR specific surface area falling within a specified range. Therefore, a high polishing rate can be achieved, and the polishing rate can be maintained even when the polishing composition is used for a long period.
The present invention is provided with: an intermediate polishing step in which the surface of a semiconductor substrate is polished such that the number of surface defects having a height of less than 3 nm is at least 45% of the total number of surface defects; and a final polishing step which is performed after the intermediate polishing step, and in which the semiconductor substrate is subjected to finishing polishing.
Provided is a wetting agent for a semiconductor substrate, said wetting agent including hydroxyethyl cellulose and water, wherein the hydroxyethyl cellulose has a radius of gyration of 56-255 nm inclusive and a contact angle of 10-32° inclusive.
The present invention addresses the problem of providing a polishing composition that makes it possible to polish in a uniform manner and at a high polishing speed while sufficiently suppressing dishing when polishing a printed wiring board, and of providing a method for manufacturing a printed wiring board. This polishing composition for polishing a printed wiring board provided with an insulating layer and a copper-containing electroconductive layer contains abrasive grains, a copper complexing agent, alkylbenzenesulfonate triethanolamine, and water. The content of alkylbenzenesulfonate triethanolamine may be 0.3-5 mass%. The pH may be between 9.0 and 10.5, inclusive. The abrasive grains may be colloidal silica. A defoaming agent may be additionally contained.
Rohm and Haas Electronic Materials CMP Holdings, Inc (USA)
Nitta Haas Incorporated (Japon)
Inventeur(s)
Itai, Yasuyuki
Penta, Naresh Kumar
Kawai, Naoko
Nakano, Hiroyuki
Haba, Shinichi
Ota, Yoshiharu
Matsushita, Takayuki
Teramoto, Masashi
Nakashima, Sakiko
Toda, Tomoyuki
Yoshida, Koichi
Cook, Lee Melbourne
Abrégé
A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.
The polishing composition of the present invention is a polishing composition for polishing a tungsten-containing metal layer formed on an insulating layer, the polishing composition comprising: abrasive grains; one or more halogen acids selected from the group consisting of iodic acid, iodous acid, and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water.
This polishing composition comprises: a polyvinyl alcohol resin which is a copolymer of a monomer represented by general formula (1) and a vinyl ester monomer and has a 1,2-diol structure in a side chain; an organic acid; and abrasive grains, the surface of which has been chemically modified so that the surface, in a solution having a pH of 2.0 or higher, has a minus zeta potential and has no isoelectric point. (In formula (1), R1 to R6 each independently represent a hydrogen atom or an organic group; X represents a single bond or a linking group; and R7 and R8 each independently represent a hydrogen atom or R9-CO- (wherein R9 represents an alkyl group).)
This polishing composition polishes a tungsten-containing metallic layer formed on an insulating layer, wherein the polishing composition contains abrasive grains; one or more halogen acid selected from the group consisting of iodic acid, iodous acid and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water.
A polishing pad has structural parts embedded therein; sensors, a memory for storing detected information obtained by the sensors, and a communication unit driven by a power supply unit to communicate with outside in a non-contact manner. The polishing pad and a communication unit configured to communicate with the communication unit of the polishing pad in a non-contact manner constitute a polishing information management system. The polishing pad and a communication unit configured to transmit and receive the information to and from the communication unit of the polishing pad in a non-contact manner constitute a polishing apparatus.
B24B 37/20 - Tampons de rodage pour travailler les surfaces planes
B24B 49/10 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs électriques
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
A polishing composition which does not contain any abrasive grain and can polish a silicon wafer, and which comprises a pH buffering agent, a polishing accelerator, a water-soluble polymer and a block-form compound. When a silicon wafer is polished using the polishing composition, a polishing rate of greater than 0.1 μm/min can be achieved.
The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.
Sensors, a memory which stores detected information obtained by the sensors, and a communication instrument which, by being driven by a power supply section, performs communication with the outside in a non-contact manner, are installed inside a polishing pad. A polishing information management system is formed by including the polishing pad configured as above and a communication section capable of performing communication in a non-contact manner with the communication instrument which is provided in the polishing pad. Furthermore, a polishing apparatus comprises the polishing pad configured as above, and the communication section capable of transmitting information to and receiving information from the communication instrument in a non-contact manner, said communication instrument being the one provided in the polishing pad.
B24B 37/00 - Machines ou dispositifs de rodageAccessoires
B24B 37/20 - Tampons de rodage pour travailler les surfaces planes
B24B 49/10 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs électriques
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
Provided is a composition for polishing silicon carbide with which it is possible to improve the speed at which an SiC crystal substrate is polished. The composition for polishing silicon carbide comprises abrasive grains, a peroxide as an oxidizer, and a chelator. As a result, it is possible to increase the speed at which a silicon carbide crystal substrate, particularly the (0001) Si face, is polished.
The present invention provides a polyurethane foam, which, despite having a low specific gravity, has a hardness and an elasticity favorable for a polishing pad, and a polishing pad made using the polyurethane foam. The polyurethane foam is obtained by reacting a blend composition containing (A) a polyisocyanate, (B) a polyol, (C) a chain extender with a molecular weight of equal to or smaller than 400, and (D) water, and in the blend composition, MDI is blended as a main component of the component (A) and a blending amount of the MDI is 45 to 70 parts by weight when a total weight of the respective components (A), (B), and (C) is taken as 100 parts by weight.
A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group:
2n, in which n is an integer of 1 or more.
Disclosed is a polishing composition which is capable of suppressing the etching rate and the dishing amount, while maintaining a high polishing rate. Specifically disclosed is a polishing composition which contains abrasive grains, an oxidizing agent, a polishing accelerator, an anionic surfactant, and a corrosion inhibitor. The abrasive grains are composed of, for example, spherical colloidal silica particles. The oxidizing agent is composed of, for example, hydrogen peroxide. The polishing accelerator is composed of a polishing accelerator (1) and a polishing accelerator (2). The polishing accelerator (1) is composed of, for example, L-tartaric acid, and the polishing accelerator (2) is composed of, for example, phosphoric acid. The anionic surfactant is composed of, for example, laurylbenzenesulfonic acid triethanolamine. The corrosion inhibitor is composed of, for example, benzotriazole.
A composition for polishing silicon nitride, which contains a colloidal silica and a polishing aid that is composed of a phosphoric acid compound and a sulfuric acid compound. By additionally containing an oxidizing agent, the composition controls a first selectivity that is the ratio of the polishing rate of a metal film to the polishing rate of a silicon nitride film, as well as a second selectivity that is the ratio of the polishing rate of an oxide insulating film to the polishing rate of the silicon nitride film.
The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.
A polishing composition by which polishing rate can be increased and surface roughness can be decreased. The polishing composition is characterized by containing at least a compound having an oxyethylene group or an oxypropylene group, a basic compound and abrasive grains in a block polyether represented by general formula (1). (In the formula, R represents an alkylene group expressed as CnH2n, and n represents an integer of not less than 1.)
a of a polishing pad 1 is subjected to a mechanical process, such as buffing, so that the flatness of the surface is improved, and corrugations on the polishing surface have a cycle of 5 mm-200 mm and a largest amplitude of 40 μm or less. As a result, the flatness of the object polished by the polishing pad 1, such as a silicon wafer, is improved.
2 film can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.
Disclosed is a polyurethane foam which has hardness and elasticity suitable for polishing pads, while having low specific gravity. A polishing pad using the polyurethane foam is also disclosed. The polyurethane foam is obtained by reacting a blended composition containing (A) a polyisocyanate, (B) a polyol, (C) a chain extender having a molecular weight of not more than 400 and (D) water. As the component (A), MDI is mainly blended in the blended composition, and the blending amount of the MDI is 45-70 parts by weight when the total weight of the components (A), (B) and (C) is taken as 100 parts by weight.
Disclosed is a polishing composition which is improved in polishing characteristics and does not produce foam. Specifically disclosed is a polishing composition characterized by containing a pH adjusting agent, a water-soluble polymer compound and a compound having an alkylene diamine structure with two nitrogen atoms which is represented by the formula (1) below, in which compound at least one block polyether is bonded to each nitrogen atom in the alkylene diamine structure. In this block polyether, an oxyethylene group EO is bonded with an oxypropylene group PO. (In the formula, R represents an alkylene group expressed as CnH2n, and n represents an integer not less than 1.)
Disclosed is a polishing composition which enables to realize a high polishing rate, while improving flatness. Specifically disclosed is a polishing composition suitable for a metal film, particularly for a copper (Cu) film. This polishing composition contains a basic compound containing an ammonium group, an alkylnaphthalene sulfonate, hydrogen peroxide and the balance of water. The pH of the polishing composition is within the range of 8-12. By containing such components, the polishing composition enables to realize a high polishing rate, while improving flatness.
Disclosed is a polishing composition having a higher polishing rate, while suppressing formation of recesses or dishing. Specifically disclosed is a polishing composition suitable for a metal film, in particular a copper (Cu) film, which contains ammonia, hydrogen peroxide, an amino acid, an anionic surfactant and the balance of water. By containing such components, the polishing composition enables to suppress formation of recesses and dishing particularly when it is used in a two-step polishing.
Disclosed is a polishing composition which enables to realize a high polishing rate, while improving flatness. Specifically disclosed is a polishing composition suitable for a metal film, particularly for a copper (Cu) film. This polishing composition contains a basic compound containing an ammonium group, an alkylbenzene sulfonate having an alkyl group with 9-18 carbon atoms, hydrogen peroxide and the balance of water. Ammonium hydroxide can be used as the basic compound, and dodecylbenzene sulfonate or the like can be used as the alkylbenzene sulfonate.
Disclosed is a polishing composition which is suitable for polishing of metal films, which is so-called finish-polishing. Specifically disclosed is a polishing composition containing a colloidal silica having an average particle diameter as determined by light scattering of not less than 20 nm but less than 80 nm as abrasive grains, and at least one substance selected from iodic acid and salts thereof as an oxidant, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion.
Disclosed is a polishing composition containing ammonium hydroxide, an ammonium salt and an organic acid, which enables polishing at a higher speed than the conventional compositions. The polishing composition realizes polishing at a still higher speed by additionally containing an oxidizing agent. When the polishing composition further contains an anticorrosive agent, dishing is suppressed. In this polishing agent, an amino acid is preferable as the organic acid, hydrogen peroxide is preferable as the oxidizing agent, and a tetrazole derivative is preferable as the anticorrosive agent. Consequently, there is provided a polishing composition which enables high-speed polishing while suppressing dishing.
Disclosed is an additive for an abrasive composition, which can ensure stable abrasion properties. The additive comprises at least one amine compound and an alcohol. The amine compound includes a quaternary ammonium salt. When the amine compound is contained in a high concentration, the occurrence of precipitation of the amine compound can be prevented by adding the alcohol.
Disclosed is a polishing composition which enables a high-speed polishing, while suppressing dishing. Specifically disclosed is a polishing composition which is suitable for polishing a metal film, especially a copper (Cu) film. This polishing composition contains ammonia, an ammonium salt, hydrogen peroxide and an amino acid, and the balance is composed of water. Ammonium chloride and ammonium carbonate are preferable as the ammonium salt, and an acidic amino acid and a hydroxyamino acid are preferable as the amino acid.
Provided is a polishing pad for improving qualities of a polishing object by improving planarity of the object. Machining process such as buff process is performed to a polishing surface (1a) of a polishing pad (1) to have improved planarity, swells on the polishing surface in a cycle of 5mm-200mm, with a maximum amplitude of 40&mgr;m or less. Thus, planarity of the object, such as a silicon wafer, to be polished by using the polishing pad (1) is improved.
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