AXT, Inc.

États‑Unis d’Amérique


 
Quantité totale PI 24
Rang # Quantité totale PI 61 023
Note d'activité PI 1,9/5.0    13
Rang # Activité PI 67 107
Symbole boursier
ISIN US00246W1036
Capitalisation 98.00M  (USD)
Industrie Semiconductor Equipment & Materials
Secteur Technology
Classe Nice dominante Produits chimiques destinés à l'...

Brevets

Marques

17 5
0 0
0 1
1
 
Dernier brevet 2024 - Low etch pit density 6 inch semi...
Premier brevet 1997 - Charge for vertical boat growth ...
Dernière marque 2021 - AXT
Première marque 2000 - AXT

Industrie (Classification de Nice)

Derniers inventions, produits et services

2024 Invention Low etch pit density 6 inch semi-insulating gallium arsenide wafers. Methods and systems for low...
Invention Low etch pit density, low slip line density, and low strain indium phosphide. Methods and wafers...
2023 Invention Method and system for vertical gradient freeze 8 inch gallium arsenide substrates. Methods and w...
Invention Low etch pit density 6 inch semi-insulating gallium arsenide wafers. −3 or less.
Invention Low etch pit density, low slip line density, and low strain indium phosphide. −2 or less. The waf...
2021 P/S Gallium Arsenide and Indium Phosphide as raw materials for use in the manufacture of compound sem...
P/S Indium Phosphide as a raw material for use in the manufacture of compound semiconductor materials...
P/S Gallium Arsenide as a raw material for use in the manufacture of compound semiconductor materials...
2019 Invention Low etch pit density gallium arsenide crystals with boron dopant. Methods and systems for low et...
2018 Invention Implantable weight control device to promote early and prolonged satiety in a bariatric patient. ...
2012 Invention Crystal growth apparatus and method. Systems and methods are disclosed for crystal growth using ...
2011 P/S Compound semiconductor materials and substrates, namely, gallium arsenide, indium phosphide, ger...
P/S Compound semiconductor materials and substrates, namely, Gallium Arsenide, Indium Phosphide, Germ...
Invention Low etch pit density (epd) semi-insulating iii-v wafers. Systems and methods of manufacturing waf...
2009 Invention Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for man...
Invention Systems, methods and slurries for chemical-mechanical rough polishing of gaas wafers. Chemical p...
Invention Systems, methods and solutions for cleaning crystal growth vessels. The disclosure provides mixe...
Invention Systems, methods and solutions for chemical polishing of gaas wafers. Chemical polishing solution...
Invention Systems, methods and substrates of monocrystalline germanium crystal growth. Systems, methods, an...
Invention Low etch pit density (epd) semi-insulating gaas wafers. A method for manufacturing wafers using ...
2008 Invention Low etch pit density (epd) semi-insulating iii-v wafers. Systems and methods of manufacturing wa...
Invention Crystal growth apparatus and method. Systems and methods are disclosed for crystal growth using V...
Invention Laser adjustable depth mark system and method. A system and method for adjustable laser mark dep...
2007 Invention Low etch pit density (epd) semi-insulating gaas wafers. A method for manufacturing wafers using a...
Invention Method for treating obesity using an implantable weight loss device. The present invention provi...
Invention Implantable weight control device. The present invention provides an endoscopically implantable w...
2004 Invention Apparatus and method for reducing impurities in a semiconductor material. An apparatus and metho...
Invention Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor co...
Invention Apparatus and method for reducing impurities in a semiconductor material. An apparatus and method...
2003 Invention High power, high luminous flux light emitting diode and method of making same. A high power, high...
Invention Apparatus for growing monocrystalline group ii-vi and iii-v compounds. An apparatus (100) for pro...
2002 Invention Method and apparatus for cutting waveguides to precise differential lengths using time-domain-ref...
Invention Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping a...
Invention Dynamic dispersion compensation in high-speed optical transmission systems. In a system and metho...
Invention Polarization multiplexed optical clock. A method for generating a polarization-multiplexed optica...
Invention Apparatus for growing monocrystalline group ii-vi and iii-v compounds. An apparatus for producing...
Invention High-frequency diplexer. A high-frequency diplexer is described. The high-frequency diplexer incl...
Invention Receiver for high-speed optical signals. A demultiplexer is described that includes an optical sp...
2001 Invention Polarization multiplexed optical data modulator. A method for modulating a polarization-multiplex...
Invention High-connector density interface plate. A high-connector density interface plate comprising a cur...
Invention Variable pulse width optical pulse generation with superposed multiple frequency drive. A variabl...
Invention Oil filter containment receptacle. a flexible, bag-like, receptacle for use when removing a vehic...
Invention System and method for wide dynamic range clock recovery. A system and method for clock recovery f...
Invention Multi-stage polarization transformer. A multi-stage polarization transformer is described that in...
Invention Communication channel optimization using forward error correction statistics. An apparatus and me...
Invention Intelligent performance monitoring in optical networks using fec statistics. An apparatus and met...
Invention Automatic polarization controller for polarization multiplexed optical signals. An automatic pola...
2000 P/S crystalline semiconductor wafers; solid state semiconductor devices