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2015
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Invention
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Nonvolatile memory device having a current limiting element. Embodiments of the invention general... |
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2014
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Invention
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Doped oxide dielectrics for resistive random access memory cells. Provided are methods of fabrica... |
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Invention
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Conductive barriers for ternary nitride thin-film resistors. In a thin-film resistor stack (e.g. ... |
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Invention
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Method of forming insulated sidewall gate electrode for vertical field effect transistor. A metho... |
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Invention
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Two stage forming of resistive random access memory cells. Provided are memory cells, such as res... |
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Invention
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Vertical 1t-1r memory cells, memory arrays and methods of forming the same. Vertical 1 T-l R memo... |
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Invention
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Bipolar multistate nonvolatile memory. Embodiments generally include a method of forming a nonvol... |
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Invention
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Regrouping and skipping cycles in non-volatile memory. A non-volatile memory utilizes multiple pr... |
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Invention
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Controlling composition of multiple oxides in resistive switching layers using atomic layer depos... |
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Invention
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Nonvolatile resistive memory element with an integrated oxygen isolation structure.
A nonvolatil... |
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Invention
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Fet low current 3d rram non-volatile storage. Non-volatile storage devices having reversible resi... |
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Invention
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Vertical bit line wide band gap tft selection transistor of a 3d rram. A 3D memory array having a... |
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Invention
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Methods and systems to reduce location-based variations in switching characteristics of 3d reram ... |
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Invention
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Nonvolatile resistive memory element with a metal nitride containing switching layer.
A nonvolat... |
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Invention
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Shared-gate vertical-tft for vertical bit line array. A non-volatile storage device comprises: a ... |
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Invention
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Shaping reram conductive filaments by controlling grain-boundary density. Filament size and shape... |
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Invention
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Reram cells with diffusion-resistant metal silicon oxide layers. A metal silicon oxide barrier la... |
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Invention
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Resistive switching by breaking and re-forming covalent bonds.
A variable resistance layer in a... |
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Invention
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Current-limiting electrodes. 2 formation and minimizing nitrogen diffusion. A binary metal nitrid... |
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Invention
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Capping thin-film resistors to control interface oxidation. A thin cap of metal alloy or metal-si... |
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Invention
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Method for forming a doped metal oxide for use in resistive switching memory elements. Methods fo... |
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Invention
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Differential current sense amplifier and method for non-volatile memory. The selected bit line in... |
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Invention
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Memory device having an integrated two-terminal current limiting resistor. A resistor structure i... |
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Invention
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Sense amplifier local feedback to control bit line voltage. Methods for precharging bit lines usi... |
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Invention
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Resistive random access memory cells having shared electrodes with transistor devices. Provided a... |
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Invention
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In-situ nitride initiation layer for rram metal oxide switching material.
A resistive memory dev... |
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Invention
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Method and apparatus for high capacity anodes for lithium batteries. An electrode is provided for... |
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Invention
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Methods and apparatus for high capacity anodes for lithium batteries. An electrode is provided fo... |
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Invention
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Confined defect profiling within resistive random memory access cells. Provided are resistive ran... |
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Invention
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Metal aluminum nitride embedded resistors for resistive random memory access cells. Provided are ... |
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Invention
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3d non-volatile memory having low-current cells and fabrication thereof. A 3D nonvolatile memory ... |
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Invention
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Vertical bit line non-volatile memory systems and methods of fabrication. Three-dimensional (3D) ... |
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Invention
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Methods and apparatus for metal oxide reversible resistance-switching memory devices. In some asp... |
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Invention
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Program cycle skip evaluation before write operations in non-volatile memory. A non-volatile memo... |
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Invention
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Dynamic address grouping for parallel programming in non-volatile memory. A non-volatile memory s... |
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Invention
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Asynchronous fifo buffer for memory access. An asynchronous FIFO buffer that provides data in res... |
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Invention
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Vertical bit line tft decoder for high voltage operation. A 3D memory array having a vertically o... |
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Invention
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Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable o... |
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Invention
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Reram forming with reset and iload compensation. FORMING reversible resistivity-switching element... |
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Invention
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Smart read scheme for memory array sensing. Methods for reducing variability in bias voltages app... |
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Invention
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Compensation scheme for non-volatile memory. Methods for performing parallel voltage and current ... |
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Invention
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Process for forming resistive switching memory cells using nano-particles. A process for forming ... |
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Invention
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Three or more resistive state random access memory cell. Provided are resistive random access mem... |
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Invention
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Resistive random access memory cells having variable switching characteristics. Provided are resi... |
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2013
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Invention
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Embedded resistors for resistive random access memory cells. Provided are resistive random access... |
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Invention
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Reram materials stack for low-operating-power and high-density applications. A switching element ... |
