STMicroelectronics (Crolles 2) SAS

France

Commandez votre montre hebdomadaire STMicroelectronics (Crolles 2) SAS
Quantité totale PI 647
Rang # Quantité totale PI 2 050
Note d'activité PI 3,3/5.0    364
Rang # Activité PI 1 941

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Dernier brevet 2025 - Photodiode comprising a memory area
Premier brevet 2004 - Single-crystal semiconductor lay...

Derniers inventions, produits et services

2025 Invention Photodiode comprising a memory area. The present disclosure concerns a photodiode including at l...
Invention Co-integrated vertically structured capacitive element and fabrication process. First and second...
Invention Semiconductor integrated circuit component. An integrated circuit includes a semiconductor subst...
Invention Electronic circuit comprising a rf switches having reduced parasitic capacitances. The present d...
Invention Light sensor pixel and method of manufacturing the same. A pixel includes a first electrode laye...
Invention Pixel of a light sensor and method for manufacturing same. The present disclosure relates to a m...
Invention Image sensor pixels having reduced pitch. The present disclosure relates to an image sensor that...
2024 Invention Semiconductor chip manufacturing method. A substrate made of doped single-crystal silicon has an...
Invention Optical device. The disclosure relates to an optoelectronic device comprising in a stack: one re...
Invention Waveguide of an soi structure. A method includes forming a layer made of a first insulating mate...
Invention Pixel with global shutter. A pixel includes a photosensitive circuit, a sense node, a first tran...
Invention Hybrid source for generating entangled pairs of photons. The invention relates to a hybrid source...
Invention Method for producing mosfet transistors incorporating air cavities to reduce capacitive coupling ...
Invention Spad photodiode. A photodiode is formed in a semiconductor substrate of a first conductivity typ...
Invention Image sensor. An image sensor includes a pixel array where each pixel is formed in a portion of ...
Invention Device and method for continuous-time energy calculation of an analog signal. Device (1), for co...
Invention Pixel with an improved quantum efficiency having a micro-lens and a diffractive structure. The pr...
Invention Image and depth pixel. A sensor includes pixels supported by a substrate doped with a first cond...
Invention Phase-change memory. The present description concerns a device including phase-change memory cell...
Invention Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating proce...
Invention Image acquisition device. An image acquisition device includes an array of color filters and an a...
Invention Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing met...
Invention Photodiode comprising a memory area. The present disclosure concerns a photodiode including at le...
2023 Invention Digital to analog converter. The present disclosure relates to a DAC that includes: a first pixe...
Invention Image sensor. The present disclosure concerns an image sensor including a plurality of pixels, e...
Invention Image acquisition device. An image sensor includes photodetection pixels formed inside and on to...
Invention Variable-capacitance diode. A variable-capacitance diode is formed in a doped semiconductor subs...
Invention Self-referenced and regulated sensing solution for phase change memory with ovonic threshold swit...
Invention Set of integrated standard cells. An integrated circuit includes at least a first standard cell ...
Invention Light sensor. An embodiment light sensor includes an array of pixels arranged in rows and in colu...
Invention Testing device. A device for testing an optical device, comprising a first structure comprising ...
Invention Radio frequency receiver. A reception element receives an analog signal. The received analog sig...
Invention Integrated circuit including a passive component in an interconnection part, and corresponding ma...
Invention Insulating trench manufacturing. The present description concerns a method of manufacturing an i...
Invention Method of fabricating an electronic device. A first wafer includes a first semiconductor layer a...
Invention Phase-change memory cell having a compact structure. A memory cell includes a selection transist...
Invention Assembly of integrated circuit wafers. According to one aspect, there is proposed a method for a...
Invention Transistor manufacturing method. A bipolar transistor is manufactured by: forming a collector re...
Invention Manufacturing method. An electronic device includes an insulating first layer covering a second ...
Invention Mosfet transistor. A transistor includes a source region, a drain region and a body region arran...
Invention Optoelectronic device. A device includes a first pixel, based on quantum dots, configured to del...
Invention Method of fabricating an electronic chip including a memory circuit. A method of manufacturing a...
Invention Method of filling a trench formed in a semiconductor substrate. An embodiment provides a method ...
Invention Frequency synthesis using a frequency dividing circuit. In various embodiments, a frequency divid...
Invention Switch based on phase-change material. The present description concerns a switch based on a phas...
Invention Optical filter for a multispectral sensor and method for manufacturing such a filter. The presen...
Invention Forming of trenches in a substrate. The disclosure concerns a method including the steps of: a) ...
Invention Optical filter for multispectral sensor. The present description concerns an optical filter inte...
Invention Mos transistor on soi structure. The present description concerns an electronic device comprisin...