WIN Semiconductors Corp.

Taïwan, Province de Chine


 
Quantité totale PI 99
Rang # Quantité totale PI 13 383
Note d'activité PI 2,6/5.0    53
Rang # Activité PI 13 832
Symbole boursier 3105 (tpex)
ISIN TW0003105003
Capitalisation 47.9B  (TWD)
Industrie Semiconductors
Secteur Technology
Classe Nice dominante Traitement de matériaux; recycla...

Brevets

Marques

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0 0
0 0
0
 
Dernier brevet 2025 - Semiconductor structure
Premier brevet 2002 - Heterojunction bipolar transisto...
Dernière marque 2001 - W WIN
Première marque 2001 - W WIN

Industrie (Classification de Nice)

Derniers inventions, produits et services

2025 Invention Semiconductor device and power amplifier. A semiconductor device includes: a substrate; a channe...
2023 Invention Semiconductor structure. A semiconductor structure includes heterojunction bipolar transistors a...
Invention Semiconductor device. A semiconductor device includes: a substrate; a first insulating film disp...
Invention Vertical-cavity surface-emitting laser array and method for forming the same. A vertical-cavity ...
Invention Semiconductor structure. A semiconductor structure includes a substrate, and an active device and...
Invention Surface acoustic wave device. A surface acoustic wave (SAW) device includes: a substrate; a finge...
2022 Invention Transistor device and gate structure. A transistor device includes a substrate and a gate struct...
Invention Heterojunction bipolar transistor and power amplifier. A heterojunction bipolar transistor includ...
Invention Semiconductor structure for die crack detection. A III-V semiconductor die for die crack detectio...
Invention Semiconductor device and power amplifier. 1-yN, and y is greater than x. The semiconductor device...
Invention Electronic structure and method of manufacturing the same. An electronic structure is provided. ...
Invention Testing system and method of testing and transferring light-emitting element. A method of transf...
Invention Semiconductor chip. A semiconductor chip includes an active device and a passive device formed o...
Invention High electron mobility transistor and method for forming the same. A HEMT structure includes a co...
2021 Invention Vertical-cavity surface-emitting laser and method for forming the same. A vertical-cavity surface...
Invention Bipolar transistor and method for forming the same. A bipolar transistor includes a substrate, a ...
Invention Bulk acoustic wave filter and a method of frequency tuning for bulk acoustic wave resonator of bu...
Invention Vertical-cavity surface-emitting laser and method for forming the same. A vertical cavity surface...
Invention Semiconductor structure. A semiconductor structure includes a substrate, a passive device and an ...
Invention Heterojunction bipolar transistor and method for forming the same. A heterojunction bipolar trans...
2020 Invention Semiconductor structure and method for forming the same. A semiconductor structure is provided. T...
Invention Bulk acoustic wave resonator and formation method thereof. A bulk acoustic wave resonator and a f...
Invention Monolithic integration of enhancement mode and depletion mode field effect transistors. A monolit...
Invention Bias compensation circuit and amplifying module. A bias compensation circuit, coupled to an ampli...
Invention Bias compensation circuit and amplifying module. A bias compensation circuit, coupled to an ampl...
Invention Gallium arsenide radio frequency circuit and millimeter wave front-end module. A gallium arsenide...
Invention Method for fabricating bulk acoustic wave resonator with mass adjustment structure. A method for ...
Invention Bipolar transistor and method for forming the same. A bipolar transistor includes an upper sub-co...
2019 Invention Monolithic integrated circuit device having gate-sinking phemts. A monolithic integrated circuit ...
Invention Semiconductor integrated circuit and circuit layout method thereof. A semiconductor integrated c...
Invention Power flat no-lead package. A power flat no-lead (FN) package is provided. The power FN package i...
Invention Gate-sinking phemts having extremely uniform pinch-off/threshold voltage. A gate-sinking pseudomo...
Invention Wideband impedance matching network. A wideband impedance matching network comprises a fundament...
Invention Gan-based field effect transistor. A GaN-based field effect transistor comprises a semiconductor...
Invention Compound semiconductor monolithic integrated circuit device with transistors and diodes. A compou...
Invention Low stress moisture resistant structure of semiconductor device. 2.
Invention Semiconductor device with antenna integrated. A semiconductor device is disclosed. The semiconduc...
2018 Invention Semiconductor structure for improving thermal stability and schottky behavior. A semiconductor st...
Invention Gallium arsenide cell and logic circuit. A GaAs (Gallium Arsenide) cell is provided. The GaAs cel...
Invention Gallium arsenide cell. A GaAs (Gallium Arsenide) cell is provided. The GaAs cell comprises at lea...
Invention Method for aligning inhomogeneous receiver with anisotropic emitter on wafer probing system. A me...
Invention Transition structure and high-frequency package. A transition structure disposed in a package is ...
2017 Invention Ohmic metal structure for gan device. An ohmic metal for GaN device comprises a diffusion barrier...
Invention Compound semiconductors having an improved high temperature resistant backside metallization. An ...
Invention Passivation structure for gan field effect transistor. An improved passivation structure for GaN...
2001 P/S Foundry services, namely, custom manufacturing of integrated circuits for others Designing integr...