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2024
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Invention
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Magnetic shielding of semiconductor devices.
An assembly is provided. The assembly includes a pa... |
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Invention
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Fe-fet structure with buried electrode. A ferroelectric transistor (FeFET) memory device includes... |
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Invention
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Structures for a laterally-diffused metal-oxide-semiconductor transistor.
Structures for a later... |
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Invention
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Structures with deep trench isolation regions for a high-voltage field-effect transistor. Structu... |
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Invention
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Laterally-diffused metal-oxide-semiconductor devices with a field plate. Structures for a lateral... |
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Invention
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Bi-directional semiconductor-controlled rectifier with dual-level isolation structures and method... |
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Invention
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Memory structures and methods of forming the same. A structure including a semiconductor layer ha... |
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Invention
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Trench isolation structures with varying depths and method of forming the same. The present discl... |
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Invention
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Optoelectronic device including photodiode having buried layer with different thicknesses. The pr... |
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Invention
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Random number generators including magnetic-tunnel-junction layer stacks. Structures for a random... |
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Invention
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Structure with ic die with enlarged area in scribe region.
A structure includes an IC die having... |
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Invention
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Device with three dimensional channel. The present disclosure relates to semiconductor structures... |
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Invention
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Structures including a photodetector and multiple cathode contacts. Structures including a photod... |
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Invention
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High-voltage electrostatic discharge device. The present disclosure relates to semiconductor stru... |
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Invention
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Device with metal field plate extension. The present disclosure relates to semiconductor structur... |
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Invention
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Via bars interleaved with capacitor structure.
The present disclosure relates to semiconductor s... |
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Invention
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Buffered top thin film resistor, mim capacitor, and method of forming the same. A semiconductor d... |
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Invention
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Under-source body contact. The present disclosure relates to semiconductor structures and, more p... |
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Invention
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Structures including metal-insulator-metal (mim) capacitors with voids.
The embodiments herein r... |
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Invention
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Heat sink for face bonded semiconductor device. A semiconductor device includes a first substrate... |
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Invention
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Transistor integration for reduced lateral space and improved breakdown voltage.
The present dis... |
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Invention
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Hall effect sensors.
The present disclosure relates to semiconductor structures and, more partic... |
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Invention
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Neuron circuits for a spiking neural network based on a voltage-controlled magnetic-tunnel-juncti... |
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Invention
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Flash memory cell arrays with a control gate strap.
Structures for a flash memory cell array and... |
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Invention
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Discontinuous barrier film between emitter and base of bipolar transistor.
The disclosure provid... |
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Invention
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Device with improved latch-up immunity.
The present disclosure relates to semiconductor structur... |
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Invention
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Structures including a photodetector and multiple deep trenches.
Structures including a photodet... |
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Invention
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Structure with capacitive junction between silicide layer and electrode and related method.
Embo... |
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Invention
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Buffered thin film resistor with metal-insulator-metal (mim) integration.
The present disclosure... |
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2023
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Invention
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Electrostatic device.
The present disclosure relates to semiconductor structures and, more parti... |
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Invention
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Current sensor for printed circuit board.
A contactless current sensing circuit for sensing curr... |
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Invention
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Stacked semiconductor structures including a passive device.
The embodiments herein relate to st... |
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Invention
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Structures including trench capacitors and methods of forming the same.
A structure including a ... |
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Invention
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Capacitors with floating metal layers.
The disclosed subject matter relates generally to capacit... |
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Invention
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Ferroelectric capacitive memory devices with a multiple-work-function electrode.
Structures for ... |
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Invention
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Single-photon avalanche diodes with hybrid trench isolation structures.
Structures for a single-... |
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Invention
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Deep trench isolation structures for a single-photon avalanche diode.
Structures for a single-ph... |
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Invention
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Structures having 1t1r architecture for resistive random-access memory devices.
The embodiments ... |
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Invention
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Neuron circuits for a spiking neural network based on magnetic-tunnel-junction layer stacks conne... |
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Invention
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Multiple-depth trench isolation for electrostatic discharge protection devices.
Structures inclu... |
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Invention
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Antifuses capable of forming localized conductive links.
The embodiments herein relate to antifu... |
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Invention
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Semiconductor devices and methods of forming the same.
A device includes an antifuse structure. ... |
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Invention
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Field-effect transistors with an asymmetric defect region.
Structures for a field-effect transis... |
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Invention
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Photodiode with deep trench isolation structures.
A photodiode device includes a layer of semico... |
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Invention
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Single-photon avalanche diodes with an integrated active device.
Structures including a single-p... |
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Invention
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Resistive memory elements with a multiple-material electrode.
Structures for a resistive memory ... |
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Invention
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Asymmetric junctionless fin field effect transistors.
The present disclosure relates to semicond... |
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Invention
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Junction field effect transistor with bottom gate underlying drain and optionally partially under... |
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2022
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Invention
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Programmable interposer using rram platform. According to various embodiments, there may be provi... |
