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2024
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Invention
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Silicon carbide device and manufacturing method therefor. A silicon carbide device, comprising: a... |
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2023
|
Invention
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Semiconductor superjunction power device. Embodiments of the present application provide a semico... |
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Invention
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Semiconductor super-junction power device and manufacturing method therefor. Provided in the embo... |
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Invention
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Semiconductor power device. A semiconductor power device, comprising: an n-type semiconductor lay... |
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Invention
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Semiconductor super-junction power device. A semiconductor super-junction power device, comprisin... |
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2022
|
Invention
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Gallium nitride hemt device and manufacturing method therefor. Embodiments of the present applica... |
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Invention
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Igbt device and manufacturing method therefor. Provided in the the embodiments of the present app... |
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Invention
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Silicon carbide device terminal structure and manufacturing method therefor. Embodiments of the p... |
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Invention
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Insulated gate bipolar transistor device. An IGBT device includes an p-type collector region, an ... |
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Invention
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Manufacturing method for silicon carbide device. A manufacturing method for a silicon carbide dev... |
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Invention
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Igbt device. The present application relates to the technical field of semiconductor power device... |
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Invention
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Semiconductor diode. The present application relates to the technical field of semiconductor powe... |
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Invention
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Insulated gate bipolar transistor device. An IGBT device includes a p-type collector region, an n... |
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Invention
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Semiconductor power device. Disclosed is a semiconductor power device, comprising a silicon-based... |
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Invention
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Semiconductor super-junction power device. Disclosed is a semiconductor super-junction power devi... |
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Invention
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Silicon carbide device and fabrication method therefor. Disclosed herein are a silicon carbide de... |
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Invention
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Igbt device and manufacturing method therefor. Disclosed herein are an IGBT device and a manufact... |
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Invention
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Igbt device. Disclosed is an IGBT device comprising a p-type collector zone, an n-type semiconduc... |
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Invention
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Semiconductor diode and manufacturing method therefor. The present application discloses a semico... |
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Invention
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Super junction semiconductor power device.
A super junction semiconductor power device includes ... |
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Invention
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Method for manufacturing igbt device. A method for manufacturing an IGBT device. An n-type charge... |
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Invention
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Semiconductor super-junction power device. Embodiments of the present application provide a semic... |
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Invention
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Semiconductor super junction power device. Embodiments of the present application provide a semic... |
|
2021
|
Invention
|
Semiconductor device.
Provided is a semiconductor device. The semiconductor device includes a se... |
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Invention
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Semiconductor device. Disclosed is a semiconductor device, comprising a semiconductor substrate; ... |
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Invention
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Semiconductor power device and control method therefor. Disclosed in the present application are ... |
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Invention
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Method for manufacturing semiconductor device. The present application relates to the technical f... |
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Invention
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Semiconductor power device. Disclosed is a semiconductor power device, comprising: a semiconducto... |
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P/S
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Printed circuit boards; electronic chips; chips [integrated
circuits]; integrated circuits; semi... |
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2020
|
Invention
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Method for manufacturing semiconductor power device.
A method for manufacturing a semiconductor ... |
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Invention
|
Silicon carbide device.
The silicon carbide device includes a gate trench, a source trench, a ga... |
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Invention
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Manufacturing method of a semiconductor device. A gate trench and a source trench are formed simu... |
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Invention
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Semiconductor device. A semiconductor device, comprising: a first conductive layer (25) located i... |
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Invention
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Manufacturing method of semiconductor power device. A manufacturing method of a semiconductor pow... |
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Invention
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Manufacturing method of semiconductor super-junction device. A manufacturing method of a semicond... |
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|
Invention
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Semiconductor power device. The present application belongs to the technical field of semiconduct... |
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|
Invention
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Method for manufacturing a semiconductor super-junction device. Disclosed is a method for manufac... |
|
2019
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Invention
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Igbt power device. Provided is an insulated gate bipolar transistor power device. The IGBT power ... |
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Invention
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Igbt device. Provided is an IGBT device. The IGBT device includes an MOSFET cell array, where eac... |
|
|
Invention
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Semiconductor super-junction power device. Provided is a semiconductor super junction power devic... |
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Invention
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Semiconductor power device. Provided is a semiconductor power device. The device includes: at lea... |
|
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Invention
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Semiconductor power device terminal structure.
Provided are an audio data processing method and ... |
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Invention
|
Igbt device. Provided is an insulated gate bipolar transistor (IGBT) device. The IGBT device incl... |
|
|
Invention
|
Semiconductor power device.
Provided is a semiconductor power device, including an n-type drain ... |
