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2022
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Invention
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Packaged semiconductor device.
Packaged semiconductor device having a heat sink, wherein the hea... |
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Invention
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Stacked iii-v semiconductor diode. −3. |
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Invention
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Stacked iii-v semiconductor diode. −3 and a second section, arranged between the first section an... |
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Invention
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Stacked iii-v semiconductor diode. −3, the dopant concentration maxima of the two drift layers ha... |
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Invention
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Stacked, high-blocking ingaas semiconductor power diode. A stacked, high-blocking III-V semicondu... |
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2020
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Invention
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Stacked high-blocking iii-v power semiconductor diode. A stacked high-blocking III-V power semico... |
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2019
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Invention
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Iii-v semiconductor diode. +-layer, and a doped intermediate layer is arranged between the n−-lay... |
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Invention
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Method for fabricating a semiconductor device and a semiconductor device. A method and stacked se... |
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Invention
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Stacked iii-v semiconductor component. + region and the first and the second peripheral edges eac... |
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Invention
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Stacked iii-v semiconductor diode. − layer having a first value on the first surface and a second... |
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2018
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Invention
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Stacked iii-v semiconductor component. 3. |
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Invention
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Iii-v semiconductor diode. − layer. |
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2017
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Invention
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Gaas based igbt semiconductor structure. + substrate. |
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Invention
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Method for manufacturing a layer stack from a p+-substrate, a p−-layer, an n−-layer and a third l... |
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Invention
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Stacked schottky diode. − layer is placed on the second semiconductor layer. |
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Invention
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Iii-v semiconductor diode. + layer. |
