Force MOS Technology Co., Ltd.

Taïwan, Province de Chine

 
Quantité totale PI 70
Rang # Quantité totale PI 19 206
Note d'activité PI 1,5/5.0    6
Rang # Activité PI 156 337
Symbole boursier 4923 (tpex)
Capitalisation 1.506B  (TWD)
Industrie Semiconductors
Secteur Technology

Brevets

Marques

70 0
0 0
0 0
0
 
Dernier brevet 2025 - Multi-chip package device
Premier brevet 2007 - Trench mosfet with terraced gate...

Derniers inventions, produits et services

2024 Invention Multi-chip package device. A multi-chip package device includes a lead frame, a transistor chip,...
Invention Method of making a multi-chip package device. A method for making a multi-chip package device in...
2023 Invention Trench-gate field effect transistor. A trench-gate field effect transistor includes a plurality ...
2020 Invention Metal-oxide semiconductor module and light-emitting diode display device including the same. A me...
2019 Invention Metal-oxide-semiconductor device. A metal-oxide-semiconductor (MOS) device comprising a heavily d...
Invention Shielded gate mosfet and fabricating method thereof. A fabricating method of a shielded gate MOSF...
2016 Invention Trench mosfet structure and layout with separated shielded gate. A trench MOSFET with closed cel...
Invention Semiconductor power device having shielded gate structure and esd clamp diode manufactured with l...
2015 Invention Trench mosfet with shielded gate and diffused drift region. A trench MOSFET with diffused drift r...
Invention Method for manufacturing a super-junction structures having implanted regions surrounding an n ep...
Invention Super-junction trench mosfet structure. A super-junction trench MOSFET is disclosed by applying a...
Invention Super-junction trench mosfets with closed cell layout having shielded gate. A super-junction tren...
2014 Invention Super-junction trench mosfets with closed cell layout. A super-junction trench MOSFET with closed...
Invention Super-junction trench mosfets with short terminations. A super-junction trench MOSFET with a shor...
Invention Super-junction trench mosfet integrated with embedded trench schottky rectifier. A super-junctio...
Invention Trench mosfet with self-aligned source and contact regions using three masks process. A trench M...
Invention Trench mosfet having a top side drain. This invention discloses a trench MOSFET comprising a top ...
2013 Invention Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trenc...
Invention Trench mosfet with trenched floating gates having thick trench bottom oxide as termination. A pow...
Invention Trench mosfet with trenched floating gates having thick trench bottom oxide as termination. A sem...
Invention Fast switching super-junction trench mosfets. A fast switching super-junction trench MOSFET is di...
Invention Avalanche capability improvement in power semiconductor devices using three masks process. A powe...
Invention Trench mosfet structures using three masks process. A trench MOSFET comprising a plurality of tr...
Invention Trench mosfet structure having self-aligned features for mask saving and on-resistance reduction....
Invention Integrated trench mosfet with trench schottky rectifier. f and reverse leakage current for trench...
Invention Super-junction trench mosfet having deep trenches with buried voids. A super-junction trench MOSF...
2012 Invention Short channel trench mosfets. A trench MOSFET with a short channel length is disclosed for reduc...
Invention Semiconductor power device having wide termination trench and self-aligned source regions for mas...
Invention Trench metal oxide semiconductor field effect transistor with multiple trenched source-body conta...
Invention Trench mosfet layout with trenched floating gates and trenched channel stop gates in termination....
Invention Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using r...
Invention Method of manufacturing trench mosfet using three masks process having tilt- angle source implant...
Invention Fast switching hybrid igbt device with trenched contacts. A hybrid IGBT device having a VIGBT and...
Invention Power semiconductor device comprising a plurality of trench igbts. A power semiconductor device w...
Invention Method for manufacturing a power semiconductor device. A power semiconductor device with improved...
Invention Super-junction trench mosfet with multiple trenched gates in unit cell. A super-junction trench M...
Invention Semiconductor power device integrated with esd protection diodes. A semiconductor power device in...
Invention Trench mosfet with trenched floating gates and trenched channel stop gates in termination. A tren...
Invention Semiconductor power device integrated with clamp diodes having dopant out-diffusion suppression l...
2011 Invention Trench mosfet with resurf stepped oxide and diffused drift region. A trench MOSFET with split gat...
Invention Semiconductor power device having improved termination structure for mask saving. A improved term...
Invention Semiconductor power device integrated with improved gate source esd clamp diodes. A trench semico...
Invention Semiconductor power devices integrated with a trenched clamp diode. A semiconductor power device ...
Invention Semiconductor power device with embedded diodes and resistors using reduced mask processes. A tre...
Invention Mosfet-schottky rectifier-diode integrated circuits with trench contact structures. A trench MOSF...
Invention Shielded gate mosfet-schottky rectifier-diode integrated circuits with trenched contact structure...
Invention High switching trench mosfet. A shielded gate trench metal oxide semiconductor filed effect trans...
Invention Trench mosfet having shielded electrode integrated with trench schottky rectifier. A trench MOSFE...