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2024
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Invention
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Device and method for manufacturing aiii-bv - compound semiconductor single crystals as well as a... |
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2022
|
Invention
|
Growth of a-b crystals without crystal lattice curvature.
A III-V-, IV-IV- or II-VI-compound sin... |
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2021
|
Invention
|
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity. 2 ... |
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2020
|
Invention
|
Device and method of manufacturing aiii-bv-crystals and substrate wafers manufactured thereof fre... |
|
|
Invention
|
Growth of a-b crystals without crystal lattice curvature. −3. |
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2019
|
Invention
|
Method for producing iii-n templates and the reprocessing thereof and iii-n template. xx≤0. |
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2018
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P/S
|
Crystals and wafers for the production of semiconductor
devices; semiconductor devices. |
|
|
Invention
|
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity. Th... |
|
|
Invention
|
Processes for producing iii-n single crystals, and iii-n single crystal. XX in the range of <0. |
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2017
|
Invention
|
Method and apparatus for ga-recovery. The present invention encompasses a method of selectively s... |
|
|
Invention
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Method and apparatus for ga recovery. The present invention encompasses a method of selectively s... |
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2016
|
Invention
|
Growth of a-b crystals without crystal lattice curvature. The present invention relates to a proc... |
|
|
Invention
|
Growth of a-b crystals with no curvature of the crystal lattice. The invention relates to a metho... |
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2014
|
Invention
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Method for rounding edges of solid parts generated from solid starting material and solid product... |
|
|
Invention
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Process for producing a gallium arsenide substrate which includes marangoni drying. The present i... |
|
|
Invention
|
Process for producing a gallium arsenide substrate, gallium arsenide substrate, use thereof, and ... |
|
|
Invention
|
Process for the manufacture of a doped iii-n bulk crystal and a free-standing iii-n substrate, an... |
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2013
|
Invention
|
Arrangement and method for manufacturing a crystal from a melt of a raw material and single cryst... |
|
|
Invention
|
Method for producing iii-n single crystals, and iii-n single crystal. The present invention relat... |
|
|
Invention
|
Method for producing iii-n templates and the reprocessing thereof and iii-n template. The present... |
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2012
|
Invention
|
Device and method of evaporating a material from a metal melt. A device for evaporating a metal m... |
|
|
Invention
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Apparatus and process for evaporation of material from a metal melt. An apparatus for evaporating... |
|
|
Invention
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Process for producing doped gallium arsenide substrate wafers having low optical absorption coeff... |
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2011
|
Invention
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Method and apparatus for fabricating crack-free group iii nitride semiconductor materials.
Metho... |
|
|
Invention
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Method of cutting single crystals. A single crystal having a technologically generated cleavage s... |
|
|
Invention
|
Semipolar semiconductor crystal and method for manufacturing the same. 3) having a first surface ... |
|
|
Invention
|
Semipolar semiconductor crystal and method for producing it. A method for producing a semipolar s... |
|
|
Invention
|
Method and apparatus for fabricating crack-free group iii nitride semiconductor materials. (1-x)N... |
|
|
Invention
|
Method and device for manufacturing semiconductor compound materials by means of vapour phase epi... |
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2010
|
Invention
|
Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereo... |
|
2009
|
Invention
|
Process for smoothening iii-n substrates. A process for preparing smoothened III-N, in particular... |
|
|
Invention
|
Method for producing doped gallium arsenide substrate wafers with a low optical absorption coeffi... |
|
2008
|
Invention
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Method of cutting single crystals. e(0) and simultaneously at least one of the following conditio... |
|
|
Invention
|
Method for dividing monocrystals. A method for dividing monocrystals is provided, comprising the ... |
|
|
Invention
|
Workpiece mounting and method for wire sawing.
A method and a device for cutting a workpiece in ... |
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|
Invention
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Method for simulatenously producing multiple wafers during a single epitaxial growth run and semi... |
|
|
Invention
|
Device and process for heating iii-v wafers, and annealed iii-v semiconductor single crystal wafe... |
|
|
Invention
|
Method and apparatus for fabricating crack-free group iii nitride semiconductor materials.
A met... |
|
|
Invention
|
Bulk gan and algan single crystals. Bulk GaN and AlGaN single crystal boules, preferably fabricat... |
|
|
Invention
|
Arrangement and method for producing a crystal from the melt of a raw material and monocrystal. T... |
|
2007
|
Invention
|
Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as w... |
|
|
Invention
|
Method and device for the production of a compound semiconductor material by means of gas phase e... |
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2006
|
Invention
|
Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor... |
|
2005
|
Invention
|
Method for achieving low defect density algan single crystal boules. A method for growing bulk Ga... |
|
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P/S
|
crystals and wafers for the production of semiconductors; semiconductor |
|
1996
|
P/S
|
Crystals and wafers for the manufacture of semiconductor component parts. |
