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2025
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Invention
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Integrated design for iii-nitride devices.
A semiconductor device comprises a III-N device and a... |
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Invention
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Lateral iii-nitride devices including a vertical gate module.
A lateral III-N device has a verti... |
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Invention
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High voltage iii-n devices and structures with reduced current degradation.
Lateral III-N device... |
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2024
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Invention
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Configurations for four quadrant iii-nitride switches. An electronic component comprises semicond... |
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2023
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Invention
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Integrated design for iii-nitride devices. A semiconductor device comprises a III-N device and a ... |
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Invention
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High voltage iii-n devices and structures with reduced current degradation. Lateral III-N devices... |
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Invention
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Module configurations for integrated iii-nitride devices. An electronic module for a half-bridge ... |
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Invention
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Cascode normally off switch with driver and self bias.
An electronic component comprises a semic... |
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Invention
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Cascode normally off switch with driver and self bias. An electronic component comprises a semico... |
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Invention
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N-polar devices including a depleting layer with improved conductivity.
Described herein are lat... |
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Invention
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N-polar devices including a depleting layer with improved conductivity. Described herein are late... |
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2022
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Invention
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Module assembly of multiple semiconductor devices with insulating substrates.
An electronic comp... |
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Invention
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Module assembly of multiple semiconductor devices with insulating substrates. An electronic compo... |
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Invention
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Iii-n devices with improved reliability. An electronic component includes at least three terminal... |
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2021
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Invention
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Iii-nitride devices with through-via structures.
A semiconductor device comprises a III-N device... |
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Invention
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Iii-nitride devices with through-via structures. A semiconductor device comprises a III-N device ... |
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Invention
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Iii-nitride devices including a depleting layer.
Described herein are lateral III-N (e.g. GaN) d... |
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Invention
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Iii-nitride devices including a depleting layer. Described herein are lateral III-N (e.g. GaN) de... |
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2020
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Invention
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Switching circuits having drain connected ferrite beads. A circuit includes an electronic compone... |
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Invention
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Lateral iii-nitride devices including a vertical gate module. A lateral III-N device has a vertic... |
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Invention
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Iii-nitride devices including a graded depleting layer. A III-N device includes a III-N layer str... |
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2018
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Invention
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Enhancement-mode iii-nitride devices. A III-N enhancement-mode transistor includes a III-N struct... |
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Invention
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Conditions for burn-in of high power semiconductors. Techniques for improving reliability of III-... |
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2017
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Invention
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Iii-nitride transistor including a iii-n depleting layer. A transistor includes a III-N layer str... |
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Invention
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Switching circuits having ferrite beads. A circuit includes an electronic component package that ... |
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Invention
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Bridgeless power factor correction circuits. A power factor correction circuit comprises a pair o... |
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Invention
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Xo gate insulator. xO layer with 0.2
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2016
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Invention
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Methods of forming reverse side engineered iii-nitride devices. Group III-nitride devices are des... |
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Invention
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Enhancement mode iii-n hemts. A III-N semiconductor device that includes a substrate and a nitrid... |
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Invention
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Iii-nitride transistor including a p-type depleting layer. A transistor includes a III-N layer st... |
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Invention
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Semiconductor devices with field plates. A III-N device is described with a III-N material layer,... |
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Invention
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Gallium nitride power devices.
Enhancement mode III-nitride devices are described. The 2DEG is d... |
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Invention
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Semiconductor modules and methods of forming the same. Electronic modules, and methods of forming... |
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Invention
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Paralleling of switching devices for high power circuits. A circuit includes first and second hal... |
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Invention
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Forming enhancement mode iii-nitride devices. A method of fabricating a III-N device includes for... |
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2015
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Invention
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Gate structures for iii-n devices. A semiconductor device includes a III-N layer, a plurality of ... |
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2014
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Invention
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Recessed ohmic contacts in a iii-n device. A device includes a III-N layer having an upper side a... |
