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2024
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Invention
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Semiconductor structures. A CAVET comprises: a drain terminal (110); a source terminal (170); and... |
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Invention
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Semiconductor structure and method for forming a semiconductor structure. The present disclosure ... |
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Invention
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A semiconductor structure. An epitaxial semiconductor structure comprising a silicon substrate in... |
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2023
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Invention
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Systems and methods for porous backside contacts. A layered structure (300'', 300''', 300'''', 30... |
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Invention
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Systems and methods for controlling porous resistivities. A method (700) for forming a layered st... |
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Invention
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Systems and methods for stress reduction in porous layers. A layered structure (300'') can includ... |
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Invention
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Systems and methods for tuning porous bandgaps to reduce thermal donor effects. g1g2g1g2g1g2g1g2g... |
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Invention
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Systems and methods for porous tool. A porous tool (200'', 200''') for porosifying a wafer (302) ... |
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Invention
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Systems and methods for porous wall coatings. A layered structure (300'') includes a substrate (3... |
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Invention
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A semiconductor structure. The present invention provides a semiconductor structure (10) comprisi... |
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Invention
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A light emitting device on ge. A light emitting device (10) comprising a germanium first layer (1... |
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Invention
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Layered structure.
The present disclosure relates to a layered structure comprising: a substrate... |
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Invention
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Method and system for mixed group v precursor process.
A method of forming a layer includes intr... |
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Invention
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Layered structure.
A method of fabricating a layered structure comprising growing an epitaxial l... |
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2022
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Invention
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Layered structure.
A layered structure comprising a substrate having a first deformation. Also o... |
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Invention
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Porous distributed bragg reflector apparatuses, systems, and methods.
A layered structure includ... |
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Invention
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Stress management layer for gan hemt.
A high electron mobility transistor comprising a nucleatio... |
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Invention
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Stress management layer for gan hemt. A high electron mobility transistor 22 comprising a nucleat... |
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Invention
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Multi-wavelength light-emitting semiconductor devices.
A multi-wavelength light-emitting semicon... |
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Invention
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Layered structure.
A layered structure including a substrate in [100] crystal orientation, a cry... |
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Invention
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Porous rf switch for reduced crosstalk.
A layered structure includes a substrate, a porous layer... |
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2021
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P/S
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Custom manufacturing of semiconductors; custom manufacture of electronic, wireless, photonic, opt... |
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P/S
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Electronic components; electronic components, namely wafers;
semiconductor wafers; wafers for in... |
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Invention
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Localized strain fields in epitaxial layer over creo. B) of the second subregion (104B). |
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Invention
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Strain-balanced semiconductor structure.
Systems and methods are described herein to grow a laye... |
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2020
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Invention
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Tunable stress compensation in layered structures. A layered structure having controllable stress... |
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Invention
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Long-wave infrared photodetector structures formed on high-index substrates. A layered structure ... |
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Invention
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Photodetector structures formed on high-index substrates. A layered structure used for detecting ... |
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Invention
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A pnictide nanocomposite structure for lattice stabilization.
A layered structure for semiconduc... |
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Invention
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A pnictide nanocomposite structure for lattice stabilization. A layered structure for semiconduct... |
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Invention
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Pnictide nanocomposite structure for lattice stabilization. A layered structure for semiconductor... |
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Invention
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Integrated epitaxial metal electrodes. Systems and methods are described herein to include an epi... |
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Invention
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Semiconductor material having tunable permittivity and tunable thermal conductivity. A layered st... |
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2019
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Invention
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Iii-n to rare earth transition in a semiconductor structure. In view of the high-temperature issu... |
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Invention
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Dielectric passivation for layered structures. A passivated semiconductor device structure includ... |
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Invention
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Dielectric passivation for layered iii-nitride structures. A passivated semiconductor device stru... |
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|
Invention
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Integrated epitaxial metal electrodes for modified devices. Structures having an epitaxial metal ... |
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|
Invention
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Integrated epitaxial metal electrodes for modified devices.
Structures having an epitaxial metal... |
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Invention
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Optoelectronic devices formed over a buffer. An optoelectronic device includes an Sb-based metamo... |
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Invention
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Optoeletronic devices formed over a buffer. An optoelectronic device includes an Sb-based metamor... |
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Invention
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Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer g... |
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Invention
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Re-based integrated photonic and electronic layered structures. Systems and methods describe grow... |
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Invention
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Porous distributed bragg reflectors for laser applications. Embodiments described herein provide ... |
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2017
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Invention
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Epitaxial ain/creo structure for rf filter applications. Proposed is a layer structure (1100, 103... |
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Invention
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Epitaxial metal oxide as buffer for epitaxial iii-v layers. Systems and methods are described her... |
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2014
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P/S
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Custom manufacturing services, namely, custom manufacture of electronic, wireless, photonic, opto... |
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P/S
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Electronic components, namely wafers; semiconductor wafers;
wafers for integrated circuits; sili... |
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P/S
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Electronic components; wafers; semiconductor wafers; wafers for integrated circuits; silicon wafe... |
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2011
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P/S
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Semiconductor substrates, namely, wafers having one or more layers with semiconductor properties |
