Infineon Technologies Bipolar GmbH & Co. KG

Allemagne

 
Quantité totale PI 23
Rang # Quantité totale PI 63 671
Note d'activité PI 1,9/5.0    12
Rang # Activité PI 73 071
Parent Infineon Technologies AG

Brevets

Marques

7 0
0 0
16 0
0
 
Dernier brevet 2024 - On-load tap changer module, asse...
Premier brevet 2000 - Power semiconductor component ha...

Derniers inventions, produits et services

2023 Invention Semiconductor device. A semiconductor device includes a semiconductor body having opposite first...
2022 Invention Method and device for producing an edge structure of a semiconductor component. A method for pro...
Invention On-load tap changer module, assembly composed of an on-load tap changer module and a power transf...
Invention On-load tap-changer module, arrangement composed of an on-load tap-changer module and power trans...
Invention Tap changing for a power transformer of a wind turbine electrical power system. A control system ...
Invention Power semiconductor component for voltage limiting, arrangement having two power semiconductor co...
2020 Invention Short-circuit semiconductor component and method for operating it. A short-circuit semiconductor ...
2019 Invention Short-circuit semiconductor component and method for operating same. A short-circuit semiconducto...
Invention Short-circuit semiconductor component and method for operating same. EREVSVSRSR) being embedded a...
2016 Invention Power semiconductor device module having a pressure plate that forms a basin. The invention relat...
Invention Power semiconductor module with improved bonding connection structure. The invention relates to a...
2015 Invention Disc-shaped thyristor for a plurality of plated-through semiconductor components. A disk cell for...
Invention Improved disc-shaped thyristor for a plurality of plated-through semiconductor components. The in...
Invention Improved disk cell for several pressure-contacted semiconductor components. The invention relates...
2012 Invention Semiconductor component with optimized edge termination. an inner zone with a basic doping of a f...
Invention Method for doping a semiconductor body, and semiconductor component. The invention relates to a m...
Invention Semiconductor component with optimized edge termination. A semiconductor component comprising: - ...
Invention Sulphur-doped power semiconductor component with deep pn junction. The invention relates to a met...
Invention Power semiconductor module. The invention relates to a module (1) for at least one power semicond...
Invention Method for producing a semiconductor component comprising a lateral resistance region. The invent...
2011 Invention Short-circuit current discharge for a sub-module of a modular multi-stage converter (mmc). The in...
Invention Power semiconductor switch with a modular design with current balance monitoring for fault detect...
Invention Stackable power semiconductor switch using soldering and bonding techniques. The invention relate...
Invention Method and device for producing an edge structure of a semiconductor component. The invention rel...
2010 Invention Trigger stage thyristor having decoupled trigger stage. The invention relates to a thyristor comp...
2000 Invention Power semiconductor component having a mesa edge termination. A power semiconductor component hav...